CN1631793A - Synthesis method for cadmium selenide and cadmium telluride quantum dot - Google Patents
Synthesis method for cadmium selenide and cadmium telluride quantum dot Download PDFInfo
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Abstract
The invention belongs to the method for compounding cadmium selenide and quanta of cadmium telluride, which is: use cadmium oxide containing 2~18 carbon atom as cadmium source, selenium powder as selenium source and tellurium powder as tellurium source, and the mol ratio of cadmiumsource and selenium source or tellurium source is 5:1-1:5, dissolve the selenium and tellurium powder with tricapryl phosphine, make oleic acid, and tricapryl phosphine oxide as enveloping agent and the mol ratio of cadmium source and enveloping agent is 1:2-1:6, use benzene, toluene, cyclohexane, normal hexane and normal heptane as solvent, under the condition that the density of cadmium source is 0.001-0.015M, the temperature in autoclave is 140-180deg.C, heat them for 0.8-16 hours and obtain cadmium selenide and quanta of cadmium telluride with different sizes by changing the reaction time. The cadmium selenide and quanta of cadmium telluride has narrower size distribution which is shown as narrower shooting of fluorescence whose half-peak width of quanta of cadmium selenide is 22-33nm and that of quanta of cadmium telluride is 29-35nm.
Description
Technical field
The invention belongs to the synthetic method of cadmium selenide and cadmium telluride quantum dot.
Background technology
Inorganic semiconductor is nanocrystalline to have a lot of differences with bulk material on physical properties.For example, because quantum confined effect, II-VI family semiconductor-quantum-point (SemiconductorQuantum Dots), be that three-dimensional size is all less than the semiconductor nano of its exciton Bohr diameter, show the optical property that depends on size, and this character can be applicable to prepare fields such as photodiode, solar cell, single electron laser apparatus, biological label, and therefore, the semiconductor-quantum-point of synthetic controllable size has become the focus of broad research in recent years.In the study on the synthesis of II-VI family semiconductor-quantum-point, the organometallics presoma pyrolysated method that is grown up by Bawendi group is one of the method (J.Am.Chem.Soc.1993 that is widely used for synthetic high-quality semiconductor quantum dot, 115,8706).Yet the used raw material of this method is the bigger material of toxicity, and contaminate environment, and experimental implementation complexity easily is unfavorable for large-scale industrial production.For example, as the dimethyl cadmium in cadmium source, be the bigger material of a kind of toxicity, meet water and easily decompose, and easily produce blast in operation, so reaction needs to finish under the anhydrous condition of anaerobic.In addition, prepare in the method for semiconductor-quantum-point in the organometallics thermolysis, the nucleation of quantum dot need be controlled under the different temperature with growth response and finish, and temperature is all higher, and is at least more than 250 ℃, wayward in large-scale production; And having at least a kind of reaction monomers need in the extremely short time, inject the hot solution of comparatively high temps fast in the reaction, this is to be difficult to realize to large-scale industrial production.After this, people such as Peng have done improvement to above-mentioned experiment, at room temperature easily decomposition explosion and the bigger dimethyl cadmium of toxicity prepare semiconductor-quantum-point (J.Am.Chem.Soc.2001,123,183 to use replacements such as more stable cadmium source such as Cadmium oxide, cadmium carbonate, cadmium acetate; Nano Lett.2001,1,333).But the nucleation of quantum dot and growth response still need to be controlled under the higher differing temps and carry out in the reaction, and have at least a kind of reaction monomers still need inject the hot solution of higher nucleation temperature fast in the extremely short time.So this method still is unfavorable for large-scale industrial production.Also the someone attempts to utilize solvent-thermal method synthesized semiconductor quantum dot (Chem.Commun.2001,629-630), but the distribution of sizes broad of products obtained therefrom shows as the fluorescence emission spectrum of broad.Therefore, the novel synthesis of exploring the semiconductor-quantum-point help large-scale commercial production is very important.
Summary of the invention
The synthetic method that the purpose of this invention is to provide a kind of cadmium selenide and cadmium telluride quantum dot.
Prepare in the method for semiconductor nano in the organometallics thermolysis, nanocrystalline nucleation was separated by selecting different temperature with two stages of growth.Usually, nucleation temperature will be higher than growth temperature, its objective is after forming fast in nanocrystal to make its slow growth.Because the nanocrystalline instability that size is little, the surface energy height, the speed of growth is than big nanocrystalline fast of size, and in the reaction of adopting solvent thermal process to carry out, autoclave helps the formation of the perfect monocrystalline of structure for reaction provides sufficiently high temperature and pressure.Its temperature of the reaction of carrying out in the autoclave is to be elevated to the temperature of reaction that sets gradually from room temperature, though nucleation and two stages of growth directly can not be separated by attemperation,, when temperature is elevated to certain value, monomer will decompose and begin reaction, and to become nuclear reaction; When monomeric concentration is reduced to a threshold value when following, the growth of nuclear will become main process.The reaction monomers that the present invention selects has enough chemical stabilities, only consume a part of monomer at nucleation stage, and residual monomers is enough to provide the growth of nucleus, and therefore, gained nanocrystalline just has narrow distribution of sizes.
Alkyl carboxylic acid cadmium or Cadmium oxide that the present invention's selection contains 2～18 carbon atoms are the cadmium source, selenium powder and tellurium powder are respectively selenium source and tellurium source, and use tri octyl phosphine (TOP) to dissolve selenium powder and tellurium powder, oleic acid, hexadecylamine or trioctyl phosphine oxide (TOPO) are coating agent, the mol ratio in cadmium source and selenium source or tellurium source is 5: 1-1: 5, the concentration in cadmium source is 0.001-0.015M, the mol ratio of cadmium source and coating agent is 1: 2-1: 6, benzene, toluene, hexanaphthene, normal hexane or normal heptane are solvent, are reflected under 140-180 ℃ the temperature to finish in autoclave.
In preparation process, at first at a certain temperature with cadmium source, coating agent and solvent, for example be heated to water white transparency under 90 ± 10 ℃ the temperature, after being cooled to below 40 ℃, mix the back again has in the autoclave of teflon lined common the adding with the selenium of new preparation or the tri octyl phosphine of tellurium (TOP) solution, autoclave is sealed and put into the inherent 140-180 ℃ of heating of stove 0.8-16 hour, just have cadmium selenide or cadmium telluride quantum dot to generate after the cooling.
Synthetic cadmium selenide of the present invention and cadmium telluride quantum dot have narrower distribution of sizes, show as narrower fluorescence emission peak.For example CdSe quantum dots fluorescence emission peak peak width at half height is 22-33nm, and cadmium telluride quantum dot fluorescence emission peak peak width at half height is 29-35nm.This method desired reaction temperature is lower, helps reducing energy consumption; Simple to operate, need not expensive complex apparatus, so be more suitable for suitability for industrialized production.
Characteristics of the inventive method are that the differential responses time can obtain the cadmium selenide or the cadmium telluride quantum dot of different size.
Description of drawings
Accompanying drawing 1 is to be 2: 1 at tetradecyl carboxylic acid cadmium and selenium powder mol ratio, the concentration of tetradecyl carboxylic acid cadmium is 0.005M, tetradecyl carboxylic acid cadmium and oleic acid mol ratio are 1: 4, temperature of reaction is ultraviolet-visible (UV-Vis) spectrum and fluorescence (PL) spectrogram of the different size cadmiumsulfide quantum dot that the differential responses time is obtained under 180 ℃ the condition, and the fluorescence emission peak peak width at half height is 22-31nm.
Accompanying drawing 2 is transmission electron microscope photos that diameter is about the CdSe quantum dots of 3.0nm.
Accompanying drawing 3 is to be 2: 1 at tetradecyl carboxylic acid cadmium and tellurium powder mol ratio, the concentration of tetradecyl carboxylic acid cadmium is 0.005M, tetradecyl carboxylic acid cadmium and oleic acid mol ratio are 1: 4, temperature of reaction is ultraviolet-visible (UV-Vis) spectrum and fluorescence (PL) spectrogram of the different size cadmium telluride quantum dot that the differential responses time is obtained under 180 ℃ the condition, and the fluorescence emission peak peak width at half height is 29-35nm
Embodiment
Embodiment 1:
The mixture of 0.1mmol (0.0235g) cadmium acetate, 0.6mmol (0.2320g) TOPO and 20ml benzene is heated to water white transparency under 90 ± 10 ℃ temperature, after being cooled to below 40 ℃, this solution is mixed the common 30ml of adding in back has in the autoclave of teflon lined with the solution that contains 0.05mmol (0.004g) selenium and 0.06g TOP again, autoclave is sealed and put into the inherent 160 ℃ of heating of stove 1 hour, just have CdSe quantum dots to generate after the cooling.The fluorescent emission peak position of its benzole soln is near 521nm under the room temperature, and peak width at half height is 31nm.
Embodiment 2:
The mixture of 1.0mmol (0.5671g) tetradecyl carboxylic acid cadmium, 3.2mmol (0.891g) oleic acid and 70ml toluene is heated to water white transparency under 90 ± 10 ℃ temperature, after being cooled to below 40 ℃, this solution is mixed the common 100ml of adding in back has in the autoclave of teflon lined with the solution that contains 5.0mmol (0.3948g) selenium and 4.3g TOP again, autoclave is sealed and put into the inherent 180 ℃ of heating of stove 10 hours, just have CdSe quantum dots to generate after the cooling.The fluorescent emission peak position of its toluene solution is near 643nm under the room temperature, and peak width at half height is 26nm.
Embodiment 3:
The mixture of 0.6mmol (0.4071g) cadmium stearate, 1.2mmol (0.4640g) TOPO and 40ml hexanaphthene is heated to water white transparency under 90 ± 10 ℃ temperature, after being cooled to below 40 ℃, this solution is mixed the common 50ml of adding in back has in the autoclave of teflon lined with the solution that contains 0.6mmol (0.0474g) selenium and 0.32g TOP again, autoclave is sealed and put into the inherent 180 ℃ of heating of stove 1 hour, just have CdSe quantum dots to generate after the cooling.The fluorescent emission peak position of its cyclohexane solution is near 494nm under the room temperature, and peak width at half height is 30nm.
Embodiment 4:
The mixture of 1.0mmol (0.1285g) Cadmium oxide, 6.0mmol (1.4488g) HDA and 70ml normal hexane is heated to water white transparency under 90 ± 10 ℃ temperature, after being cooled to below 40 ℃, this solution is mixed the common 100ml of adding in back has in the autoclave of teflon lined with the solution that contains 0.2mmol (0.0158g) selenium and 0.15g TOP again, autoclave is sealed and put into the inherent 140 ℃ of heating of stove 5 hours, just have CdSe quantum dots to generate after the cooling.The fluorescent emission peak position of its hexane solution is near 530nm under the room temperature, and peak width at half height is 33nm.
Embodiment 5:
The mixture of 0.02mmol (0.0114g) tetradecyl carboxylic acid cadmium, 3.2mmol (0.891g) oleic acid and 20ml normal heptane is heated to water white transparency under 90 ± 10 ℃ temperature, after being cooled to below 40 ℃, this solution is mixed the common 30ml of adding in back has in the autoclave of teflon lined with the solution that contains 0.04mmol (0.0032g) selenium and 0.05g TOP again, autoclave is sealed and put into the inherent 140 ℃ of heating of stove 5 hours, just have CdSe quantum dots to generate after the cooling.The fluorescent emission peak position of its n-heptane solution is near 554nm under the room temperature, and peak width at half height is 32nm.
Embodiment 6:
The mixture of 0.5mmol (0.0643g) Cadmium oxide, 2.0mmol (0.5650g) oleic acid and 40ml toluene is heated to water white transparency under 90 ± 10 ℃ temperature, after being cooled to below 40 ℃, this solution is mixed the common 50ml of adding in back has in the autoclave of teflon lined with the solution that contains 0.25mmol (0.0319g) tellurium and 0.5g TOP again, autoclave is sealed and put into the inherent 180 ℃ of heating of stove 4 hours, just have cadmium telluride quantum dot to generate after the cooling.The fluorescent emission peak position of its toluene solution is near 648nm under the room temperature, and peak width at half height is 33nm.
Embodiment 7:
The mixture of 0.02mmol (0.0136g) cadmium stearate, 0.04mmol (0.0155g) TOPO and 20ml normal hexane is heated to water white transparency under 90 ± 10 ℃ temperature, after being cooled to below 40 ℃, this solution is mixed the common 30ml of adding in back has in the autoclave of teflon lined with the solution that contains 0.1mmol (0.0128g) tellurium and 0.35g TOP again, autoclave is sealed and put into the inherent 140 ℃ of heating of stove 10 hours, just have cadmium telluride quantum dot to generate after the cooling.The fluorescent emission peak position of its hexane solution is near 658nm under the room temperature, and peak width at half height is 35nm.
Embodiment 8:
The mixture of 1.2mmol (0.6804g) tetradecyl carboxylic acid cadmium, 0.04mmol (0.0155g) TOPO and 80ml hexanaphthene is heated to water white transparency under 90 ± 10 ℃ temperature, after being cooled to below 40 ℃, this solution is mixed the common 100ml of adding in back has in the autoclave of teflon lined with the solution that contains 0.24mmol (0.0307g) tellurium and 0.5g TOP again, autoclave is sealed and put into the inherent 160 ℃ of heating of stove 5 hours, just have cadmium telluride quantum dot to generate after the cooling.The fluorescent emission peak position of its cyclohexane solution is near 647nm under the room temperature, and peak width at half height is 33nm.
Embodiment 9:
The mixture of 0.3mmol (0.0705g) cadmium acetate, 1.2mmol (0.4642g) TOPO and 20ml normal heptane is heated to water white transparency under 90 ± 10 ℃ temperature, after being cooled to below 40 ℃, this solution is mixed the common 50ml of adding in back has in the autoclave of teflon lined with the solution that contains 0.15mmol (0.0192g) tellurium and 0.3g TOP again, autoclave is sealed and put into the inherent 140 ℃ of heating of stove 3 hours, just have cadmium telluride quantum dot to generate after the cooling.The fluorescent emission peak position of its n-heptane solution is near 622nm under the room temperature, and peak width at half height is 34nm.
Embodiment 10:
The mixture of 0.1mmol (0.0567g) tetradecyl carboxylic acid cadmium, 0.4mmol (0.1130g) oleic acid and 20ml toluene is heated to water white transparency under 90 ± 10 ℃ temperature, after being cooled to below 40 ℃, this solution is mixed the common 30ml of adding in back has in the autoclave of teflon lined with the solution that contains 0.05mmol (0.0064g) tellurium and 0.15gTOP again, autoclave is sealed and put into the inherent 180 ℃ of heating of stove 16 hours, just have cadmium telluride quantum dot to generate after the cooling.The fluorescent emission peak position of its toluene solution is near 661nm under the room temperature, and peak width at half height is 35nm.
Claims (3)
1, a kind of method for preparing cadmium selenide and cadmium telluride quantum dot, the alkyl carboxylic acid cadmium or the Cadmium oxide that it is characterized in that selecting containing 2～18 carbon atoms are the cadmium source, selenium powder and tellurium powder are respectively selenium source and tellurium source, and use tri octyl phosphine to dissolve selenium powder and tellurium powder, oleic acid, hexadecylamine or trioctyl phosphine oxide are coating agent, benzene, toluene, hexanaphthene, normal hexane or normal heptane are solvent, are reflected under 140-180 ℃ the temperature to finish in autoclave.
2, the method for preparing cadmium selenide and cadmium telluride quantum dot according to claim 1 is characterized in that the cadmium source: the mol ratio in selenium source or tellurium source is 5: 1-1: 5, and the concentration in cadmium source is 0.001-0.015M, the mol ratio of cadmium source and coating agent is 1: 2-1: 6.
3, the method for preparing cadmium selenide and cadmium telluride quantum dot according to claim 1 is characterized in that controlling the differential responses time to make the quantum dot of different size.
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| CN1328351C (en) * | 2005-09-23 | 2007-07-25 | 上海大学 | Method for preparing II-VI family fluorescent mark semiconductor quantum point MX |
| CN100344531C (en) * | 2005-10-19 | 2007-10-24 | 清华大学 | Process of preparing monodisperse nanometer semiconductor selenide particle |
| CN100352886C (en) * | 2005-12-28 | 2007-12-05 | 武汉大学 | Method for preparing CdSe quantum |
| CN101181978B (en) * | 2007-11-15 | 2010-06-02 | 合肥工业大学 | Method for synthesizing cadmium selenide or zinc selenide quantum-dot by selenium dioxide |
| CN101245247B (en) * | 2008-03-24 | 2010-06-23 | 湖南大学 | Method for manufacturing fluorescence semiconductor quantum dots containing cadmium |
| CN101186825B (en) * | 2007-11-15 | 2011-03-30 | 合肥工业大学 | Selenium precursor fluid and method for preparing cadmium selenide or zinc selenide quantum dots by using the same |
| CN101074493B (en) * | 2007-04-09 | 2011-05-11 | 吉林大学 | Method for synthesizing supefine CdSe and CdTe nano-crystal |
| CN102381689A (en) * | 2011-10-30 | 2012-03-21 | 燕山大学 | Synthesization method for high-monodispersion cadmium telluride nano crystal |
| CN104477856A (en) * | 2014-11-25 | 2015-04-01 | 巢湖学院 | Synthesis method of cadmium telluride quantum dots and synthesis method of Type II cadmium telluride core-shell quantum dots |
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| CN108998031A (en) * | 2018-10-18 | 2018-12-14 | 中国人民解放军陆军炮兵防空兵学院 | A method of preparing cadmium-zinc-teiluride quantum dot |
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| CN1208238C (en) * | 2003-09-17 | 2005-06-29 | 中国科学院长春应用化学研究所 | Manufacturing method of cadmium selenide and cadmium telluride nanometer rod |
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| CN1328351C (en) * | 2005-09-23 | 2007-07-25 | 上海大学 | Method for preparing II-VI family fluorescent mark semiconductor quantum point MX |
| CN100344531C (en) * | 2005-10-19 | 2007-10-24 | 清华大学 | Process of preparing monodisperse nanometer semiconductor selenide particle |
| CN100352886C (en) * | 2005-12-28 | 2007-12-05 | 武汉大学 | Method for preparing CdSe quantum |
| CN101074493B (en) * | 2007-04-09 | 2011-05-11 | 吉林大学 | Method for synthesizing supefine CdSe and CdTe nano-crystal |
| CN101181978B (en) * | 2007-11-15 | 2010-06-02 | 合肥工业大学 | Method for synthesizing cadmium selenide or zinc selenide quantum-dot by selenium dioxide |
| CN101186825B (en) * | 2007-11-15 | 2011-03-30 | 合肥工业大学 | Selenium precursor fluid and method for preparing cadmium selenide or zinc selenide quantum dots by using the same |
| CN101245247B (en) * | 2008-03-24 | 2010-06-23 | 湖南大学 | Method for manufacturing fluorescence semiconductor quantum dots containing cadmium |
| CN102381689B (en) * | 2011-10-30 | 2013-01-30 | 燕山大学 | Synthesization method for high-monodispersion cadmium telluride nano crystal |
| CN102381689A (en) * | 2011-10-30 | 2012-03-21 | 燕山大学 | Synthesization method for high-monodispersion cadmium telluride nano crystal |
| CN104477856A (en) * | 2014-11-25 | 2015-04-01 | 巢湖学院 | Synthesis method of cadmium telluride quantum dots and synthesis method of Type II cadmium telluride core-shell quantum dots |
| CN104477856B (en) * | 2014-11-25 | 2016-03-09 | 巢湖学院 | A kind of synthetic method of cadmium telluride quantum dot and the synthetic method of II type cadmium telluride core-shell quanta dots |
| CN104952977A (en) * | 2015-05-15 | 2015-09-30 | 欧贝黎新能源科技股份有限公司 | Manufacturing method of inorganic thin film solar cell |
| WO2018032564A1 (en) * | 2016-08-17 | 2018-02-22 | 苏州星烁纳米科技有限公司 | High-pressure preparation method for quantum dot, and quantum dot |
| CN108841386A (en) * | 2018-07-10 | 2018-11-20 | 苏州星烁纳米科技有限公司 | CdZnSeS nanocrystalline preparation method |
| CN108841386B (en) * | 2018-07-10 | 2021-04-30 | 苏州星烁纳米科技有限公司 | Preparation method of CdZnSeS nanocrystal |
| CN108998031A (en) * | 2018-10-18 | 2018-12-14 | 中国人民解放军陆军炮兵防空兵学院 | A method of preparing cadmium-zinc-teiluride quantum dot |
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