CN1630112A - GaN-base III-V group nitride light emitting diode and method for manufacturing same - Google Patents

GaN-base III-V group nitride light emitting diode and method for manufacturing same Download PDF

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CN1630112A
CN1630112A CN 200410076862 CN200410076862A CN1630112A CN 1630112 A CN1630112 A CN 1630112A CN 200410076862 CN200410076862 CN 200410076862 CN 200410076862 A CN200410076862 A CN 200410076862A CN 1630112 A CN1630112 A CN 1630112A
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layer
compound semiconductor
substrate
semiconductor layer
resistant substrate
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CN100461469C (en
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郭准燮
李教烈
赵济熙
蔡秀熙
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Samsung Electronics Co Ltd
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Samsung Electro Mechanics Co Ltd
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Abstract

The invention provides a GaN-base III-V group nitride light emitting diode and a method for manufacturing the same. The GaN-base III-V group nitride light emitting diode comprises a first electrode and a second electrode which are in a reverse direction or the same direction, a high resistance etch substrate therebetween, a material layer for generating laser or lighting. The second electrode directly contacts with one area of the outer most material layer exposed by the etched area by the high resistance etch substrate. A heat conduction layer can be formed at the bottom of the high resistance etch substrate in order to cover the exposing area of the outer most material layer.

Description

GaN base III-V group-III nitride light-emitting diode and manufacture method thereof
The present patent application is that Chinese patent application No. 01143304.3, is called dividing an application of " GaN base III-V group-III nitride light-emitting diode and manufacture method thereof ".
Technical field
The present invention relates to light emitting semiconductor device with and manufacture method, be particularly related to GaN base III-V group-III nitride luminescent device and manufacture method thereof more.
Background technology
Compound semiconductor based light-emitting diode or the laser diode that can launch short-wavelength visible light are well-known.Specifically, the luminescent device (light-emitting diode) or the laser diode that adopt the III group-III nitride semiconductor to make are subjected to suitable attention, because III family semiconductor is a kind of direct transition section bar material (direct band gap material) of launching blue light by the compound of electronics and hole efficiently.
Referring to Fig. 1, the conventional light-emitting diode based on GaN base III-V group-III nitride is included in the n type GaN layer 12 on the sapphire substrate 10.N type GaN layer 12 is divided into first and second region R 1 and the R2.First area R1 has the width wideer than second area R2, and it is not subjected to etched influence after forming.Simultaneously, second area R2 is thinner than first area R1, because it is subjected to etched influence after forming.As a result, between first and second region R 1 of n type GaN layer 12 and R2, there is a step.Order forms the p type electrode 20 of active layer 16, p type GaN layer 18 and printing opacity on the first area R1 in n type GaN layer 12.Be used at the bonding pad layer 22 of packaging technology.N type electrode 14 is formed among the second area R2 of n type GaN layer 12.
The GaN base III-V group-III nitride laser diode of routine shown in Figure 2, wherein the n type is set in the face of identical direction with p type electrode, and forms a convex ridge in the zone that forms p type electrode.In this semiconductor laser diode, especially with reference to Fig. 2, the n type GaN layer 12 that is divided into first and second region R 1 and R2 is formed on the sapphire substrate 10.First area R1 is wideer and thicker than second area R2, thereby has a step between first and second region R 1 and R2.N type electrode 14 is formed among the second area R2 of n type GaN layer 12.Order forms n type AlGaN/GaN layer 24, n type GaN layer 26 and as the InGaN layer 28 of active layer, its refractive index increases gradually in the direction that makes progress on the first area R1 of n type GaN layer 12.Order forms p type GaN layer 30, p type AlGaN/GaN layer 32 and p type GaN type 36 on InGaN layer 28, and its refractive index reduces on the direction that makes progress gradually.The middle part of p type AlGaN/GaN layer 32 has a convex ridge (or rib), and p type GaN type 36 is formed on the convex ridge of p type AlGaN/GaN layer 32.The whole surface coverage of p type AlGaN/GaN layer 32 has passivation layer 34.At this, passivation layer 34 extends in the p type GaN type 36, makes current threshold reduce.That is, passivation layer 34 covers two edges of p type GaN type 36.P type electrode 38 is formed on the passivation layer 34, contacts with layer 34 upper surface that is covered that are not passivated of p type GaN type 36.
For the light-emitting diode or the laser diode based on GaN base III-V group-III nitride of routine, wherein the n type is set in the face of identical direction with p type electrode, should carry out adhesion process with two lines on identical plane in packaging technology.Therefore, packaging technology is complicated and increases time loss.N type electrode is formed in the dark erosion zone, makes between n type and p type electrode, to have big step, thus the mortality of increase packaging technology.Shown in reference Fig. 1 and 2, for the structure of the second area R2 of n type GaN layer 12, for the light-emitting diode of Fig. 1, after forming p type electrode 20 or p type GaN layer 18, n type GaN layer 12 is etched to form second area R2.In other words,, need extra photoetching treatment, thereby increase the manufacturing time of luminescent device in order on second area R2, to form n type electrode 14.
Fig. 3 illustrates another kind of conventional GaN base III-V group-III nitride laser diode, and wherein n type electrode and p type electrode are set in the face of opposite direction, and an active layer is arranged between them.Order forms n type GaN layer 12, n type AlGaN/GaN layer 24, n type GaN layer 26, InGaN layer 28, p type GaN layer 30, p type AlGaN/GaN layer 32 and p type GaN type 36, passivation layer 34 and p type electrode 38 as active layer on silicon nitride (SiC) substrate 10a (perhaps CaCl2 (GaN) substrate).N type electrode 14a is formed on the bottom of SiC substrate 10a.
Usually, it is closely related to be used for the current threshold of Laser emission and laser action mode stability and temperature in semiconductor laser diode, and along with temperature all Quantum Properties variation that raise.Therefore, need to get rid of the heat that produces in the Laser emission process in active layer, temperature raises in laser diode to avoid.For the GaN base III-V group-III nitride laser diode of routine, this substrate has low-down thermal conductivity (about 0.5W/CmK for sapphire), discharges by this convex ridge thereby heat is most of.But the heat of discharging by convex ridge is restricted, thereby can not prevent effectively that the temperature in the laser diode from raising, thereby has reduced the performance of this device.
For the conventional semiconductor laser diode shown in Fig. 2, by adopting the flip-chip adhering technique to distribute the heat that in active layer, produces, as shown in Figure 4.
Especially, with reference to Fig. 4, the inverted conventional GaN base III-V group-III nitride laser diode shown in the reference number A presentation graphs 2.Reference number 40 expression undersettings (submount), reference number 42a and 42b represent pad layer (pad layer), and reference number 40a and 40b represent to be connected respectively to the n type electrode 14 of semiconductor laser diode A and first and second heat-conducting layers of p type electrode 38.Reference symbol M represents corresponding to being layered in a Fig. 2 between n type GaN layer 12 and the p type electrode 38 and a laminate materials layer of 3 material layer 24 to 34.
As indicated above, can improve radiating efficiency by the radiating subassembly that semiconductor laser diode is adhered to a separation.But bonding between laser diode and the radiating subassembly increased the disposed of in its entirety time.In addition, this adhesion process needs accurately aliging between semiconductor laser diode and the radiating subassembly, thereby is more prone to occur failure scenarios, thereby reduces cost rate.
For example, suppose that rate of finished products is 70%, then each wafer approximately obtains 4000 laser diodes.For about 20 hours of the bonding required bonding time of the flip-chip of all laser diodes (each needs 0.3 minute approximately).
Summary of the invention
In order to address the above problem, first purpose of the present invention provides a kind of GaN base III-V group-III nitride luminescent device, and the photoetching process and the packaging technology that wherein are used to form electrode are simplified, thereby reduce the production time and the rate of reducing the number of rejects and seconds.
Second purpose of the present invention provides the method that is used to make GaN base III-V group-III nitride luminescent device.
In order to realize first purpose of the present invention, provide a kind of luminescent device at this, comprising: luminous active layer; Be set to face and center on mutually first and second electrodes of this active layer; Be formed on first compound semiconductor layer between the active layer and first electrode; Second compound semiconductor layer, it is relative with first compound semiconductor layer, is formed between the active layer and second electrode; And the high-resistant substrate, it is formed on the bottom of first compound semiconductor layer, and is partly removed, and electrically contacts between first compound semiconductor layer and first electrode allowing.
Best, the through hole that exposes the bottom of first compound semiconductor layer is formed in this high-resistant substrate, and first electrode contacts with first compound semiconductor layer by through hole.First electrode comprises the resistance contact layer, and it covers the zone by first compound semiconductor layer of the through hole exposure of the high-resistant substrate, and comprises the heat-conducting layer that is formed on this resistance contact layer.
Best, this high-resistant substrate only covers the part of first compound semiconductor layer bottom, and the first electrode contact portion or whole first compound semiconductor layer.Best, the high-resistant substrate is a sapphire substrate.Best, first and second electrodes are formed by light transmissive material.Best, first (or second) electrode is formed by reflectorized material, and second (or first) electrode is formed by light transmissive material.Best, this luminescent device further comprises the pad layer of part or all of covering second electrode.Best, this luminescent device further comprises the pad layer of part or all of covering first electrode.Best, first compound semiconductor layer is n type or unadulterated GaN base III-V nitride semiconductor layer.Best, second compound semiconductor layer is a p type GaN base III-V nitride semiconductor layer.Active layer is In preferably xAl yGa 1-x-yThe N layer, it preferably has the sub-potential well of volume (MQW) structure, wherein 0≤x≤1,0≤y≤1 and x+y≤1.
In another embodiment, the invention provides a kind of luminescent device, comprising: the high-resistant substrate; Be provided with first and second electrodes of the high-resistant substrate therebetween; And be formed between the high-resistant substrate and second electrode and be used for lasing material layer, wherein the high-resistant substrate zone is removed, and the be removed zone of first electrode by the high-resistant substrate contacts with this material layer.
Best, be used for lasing material layer and comprise: resonant layer; First and second coverings are provided with this resonant layer between them; Be separately positioned on first and second compound semiconductor layers on first and second coverings; And passivation layer, it is formed between second covering and second electrode, contact with a zone of second compound semiconductor layer according to symmetrical manner, wherein the bottom of first compound semiconductor layer contacts with first electrode by the zone that is removed of the high-resistant substrate.Best, this resonant layer comprises: lasing active layer; Be formed on first ducting layer between the active layer and first covering; And be formed on second ducting layer between the active layer and second covering.Best, the through hole that exposes the bottom of first compound semiconductor layer is formed in the high-resistant substrate, and first electrode contacts with first compound semiconductor layer by this through hole.Best, the high-resistant substrate only covers a zone of first compound semiconductor layer bottom, and the first electrode contact portion or whole first compound semiconductor layer.Active layer is In preferably xAl yGa 1-x-yThe N layer, it preferably has many quantum potential well structures, wherein 0≤x≤1,0≤y≤1 and x+y≤1.
In another embodiment, the invention provides a kind of luminescent device, comprising: luminous active layer; First and second material layers are provided with this active layer between them, first and second material layers are used in the lasting Laser emission of active layer induction; First electrode, it forms with the orlop of first material layer and contacts; Second electrode, it forms with the superiors of restricted mode with second material layer and contacts; And heat dissipation element, its orlop with first material layer contacts, and is used for dispelling the heat effectively.
Best, heat dissipation element is a heat-conducting layer, and this heat-conducting layer contacts with a undermost zone of first material layer, and substrate is present on the undermost remaining area of first material layer.Best, heat-conducting layer contacts with the undermost zone of first material layer by the through hole that is formed in this substrate.In this case, the depression that extends in the orlop of first material layer can together be formed in this substrate with through hole.This through hole can be formed in the zone of this substrate and align with first electrode.A plurality of through holes can be formed in this substrate.Best, the orlop of this through hole extend past first material layer.Best, the etched preset thickness in undermost zone of first material layer makes a step appear at the undermost zone of first material layer that has substrate and does not exist between the undermost etched zone of substrate.Best, a part of heat-conducting layer contacts by the orlop of this depression with first material layer.In this case, a plurality of depressions can be formed in this substrate, and extend through the through hole that descends material layer most and can be formed in addition in this substrate.
Best, heat-conducting layer is selected from gold (Au), silver (Ag), copper (Cu), nickel (Ni) and indium (In) one of at least.
In order to realize second purpose of the present invention, provide a kind of method that is used to make luminescent device at this, this method comprises: (a) order is formed for the first inducing luminous compound semiconductor layer, active layer and second compound semiconductor layer on the high-resistant substrate; (b) on second compound semiconductor layer, form light transmission conductive layer; (c) etching the high-resistant substrate zone is to expose first compound semiconductor layer; And (d) form high screening conductive layer to cover the exposed region of first compound semiconductor layer.Best, step (c) comprising: the bottom of polishing this high-resistant substrate; And the bottom that exposes first compound semiconductor layer by the zone of etching the high-resistant substrate.Best, the high-resistant substrate is a sapphire substrate.Best, the bottom of the high-resistant substrate is to polish by grinding or finish grinding.Best, this high-resistant substrate is by dry corrosion.In this case, can etching to become the presumptive area of through hole or the remaining area of the high-resistant substrate.Best, manufacturing method of lighting device further is included in and forms pad layer on the light transmission conductive layer.
In one embodiment, the invention provides a kind of method that is used to make luminescent device, this method comprises: (a) order is formed for the first inducing luminous compound semiconductor layer, active layer and second compound semiconductor layer on the high-resistant substrate; (b) on second compound semiconductor layer, form reflective conductive layer; (c) etching the high-resistant substrate zone is to expose first compound semiconductor layer; And (d) form light transmission conductive layer to cover the exposed region of first compound semiconductor layer.Best, step (c) comprising: the bottom of polishing this high-resistant substrate; And the bottom that exposes first compound semiconductor layer by the zone of etching the high-resistant substrate.
In another embodiment, the invention provides a kind of method that is used to make luminescent device, this method comprises: (a) be formed for lasing material layer on the high-resistant substrate; (b) on this material layer, form first electrode; (c) zone of the high-resistant substrate in a zone of exposed material layer is wanted in etching; And (d) on the bottom of the high-resistant substrate, form second electrode, with the exposed region of layer of cover material partially or completely.Best, step (a) comprising: order forms first compound semiconductor layer, first covering, resonant layer, second covering and second compound semiconductor layer on the high-resistant substrate; On second compound semiconductor layer, form mask pattern to cover the presumptive area of second compound semiconductor layer; Utilize this mask pattern as etching mask second compound semiconductor layer and second covering to be carried out composition, second covering forms ridge-shape; Remove this mask pattern; And form passivation layer being patterned on second covering of ridge-shape, contact with a zone of second compound semiconductor layer of composition.Best, step (c) comprises; The bottom of polishing the high-resistant substrate; And the bottom that exposes first compound semiconductor layer by the zone of etching the high-resistant substrate.Best, this high-resistant substrate is a sapphire substrate.Best, this high-resistant substrate is by dry corrosion.Best, the high-resistant substrate is etched to form a through hole, exposes the bottom of first compound semiconductor layer by this through hole.Best, step (d) comprising: form the resistance contact layer on the bottom of the high-resistant substrate, to cover the exposed region of this material layer partially or completely; And on this resistance contact layer, form heat-conducting layer.
According to luminescent device of the present invention and manufacture method thereof, the adhesion process of this simplification has reduced bonding mortality, and the photoetching treatment of simplifying makes the integral body manufacturing of device be more prone to reduce the time loss of manufacturing.
Description of drawings
Describe preferred embodiment in detail by the reference accompanying drawing, it is clearer that above-mentioned purpose of the present invention and advantage will become, wherein:
Fig. 1 is the cross sectional view based on the conventional light-emitting diode (LED) of GaN base III-V group-III nitride semiconductor;
Fig. 2 is the cross sectional view with conventional GaN base III-V group-III nitride semiconductor laser diode of wave guide ridge, and wherein n type and p type electrode are set in the face of equidirectional;
Fig. 3 is another kind of cross sectional view with conventional GaN base III-V group-III nitride semiconductor laser diode of wave guide ridge, and wherein the n type they between is clipped active layer by vertical being set in the face of opposite direction with p type electrode;
Fig. 4 is the cross sectional view that the semiconductor laser diode that is adhered to the Fig. 2 on the thermal component is shown;
Fig. 5 to 8 is the cross sectional view that is used for the embodiment 1 to 4 of GaN base III-V group-III nitride semiconductor light-emitting diode according to the present invention;
Fig. 9 to 22 is the cross sectional view that is used for the embodiment 5 to 18 of GaN base III-V group-III nitride semiconductor light-emitting diode according to the present invention;
Figure 23 to 27 is the cross sectional view of the embodiment 1 of the method that is used to make GaN base III-V group nitride compound semiconductor light emitting element according to the present invention;
Figure 28 and 29 cross sectional view for the embodiment 2 of the method that is used to make GaN base III-V group nitride compound semiconductor light emitting element according to the present invention;
Figure 30 to 32 is the cross sectional view of the embodiment 3 of the method that is used to make GaN base III-V group nitride compound semiconductor light emitting element according to the present invention;
Figure 33 and 34 cross sectional view for the embodiment 4 of the method that is used to make GaN base III-V group nitride compound semiconductor light emitting element according to the present invention;
Figure 35 to 40 is the cross sectional view that is used to make the method for the GaN base III-V group-III nitride semiconductor laser diode shown in Figure 17;
Figure 41 to 43 is the cross sectional view of the method that is used to make GaN base III-V group-III nitride semiconductor laser diode according to the present invention; And
Figure 44 is the cross sectional view that is illustrated in according to a common step in the manufacturing of GaN base III-V group nitride compound semiconductor light emitting element of the present invention.
Embodiment
Below with reference to the more detailed description of the accompanying drawing that the preferred embodiments of the present invention are shown GaN base III-V group-III nitride luminescent device and manufacture method thereof.The thickness in aspect and zone was exaggerated so that clear the demonstration in the figure.Embodiment 1 to 4 is used for light-emitting diode (LED), and embodiment 5 and 6 is used for laser diode (LD).
(embodiment 1)
With reference to Fig. 5, reference number 50 expression light transmission conductive layer, light transmission conductive layer 50 is used as first electrode.The pad layer 52 that is used for bonding light transmission conductive layer 50 is formed on light transmission conductive layer 50.Although not shown in Figure 5, can partly insert for example silica (SiO 2) or the such insulating barrier of silicon nitride (SiN) layer to improve the adhesion between light transmission conductive layer 50 and the pad layer 52.Second compound semiconductor layer 54 is formed on light transmission conductive layer 50 belows.Second compound semiconductor layer 54 is GaN base III-V nitride semiconductor layer.Best, second compound semiconductor layer 54 is formed by direct transition type (direct band gap) material that is doped with p type conductive impurity, is preferably the p-GaN layer.
Second compound semiconductor layer 54 can be unadulterated material layer.For example, second compound semiconductor layer 54 can be GaN layer or AlGaN or InGaN layer, wherein comprises the Al or the In of estimated rate.
Active layer 56 forms the below of second compound semiconductor layer 54.Active layer 56 is the compound and lasing material layers by the such charge carrier of for example hole and electronics.Best, active layer 56 is the GaN base III-V nitride semiconductor layer with the sub-potential well of volume (MQW) structure, is preferably In xAl yGa 1-x-yN layer (wherein 0≤x≤1,0≤y≤1 and x+y≤1).First compound semiconductor layer 58 is formed on the below that is doped with the active layer 56 of the impurity of second compound semiconductor layer, 54 opposite types.First compound semiconductor layer 58 is formed by GaN base III-V nitride semiconductor layer, and is preferably direct transition section bar material.If first compound semiconductor layer 58 is doped with conductive impurity, be preferably a n type GaN layer.If first compound semiconductor layer 58 does not have conductive doped impurity, then first compound semiconductor layer 58 is by being formed with second compound semiconductor layer, 54 identical materials layers.The high-resistant substrate 60 is positioned at the below of first compound semiconductor layer 58.The through hole 62 that exposes the bottom of first compound semiconductor layer 58 is formed in the high-resistant substrate 60.The high-resistant substrate 60 is resistance erosion substrates, for example, and sapphire substrate.Conductive layer 64 is formed on the bottom of the high-resistant substrate 60, contacts with first compound semiconductor layer 58 by through hole 62.Conductive layer 64 is the reflective material layers as second electrode.Therefore, the light that produces in active layer 56 is upwards launched by light transmission conductive layer 50.Conductive layer 64 can comprise the zone of first compound semiconductor layer that covers through hole 62 exposures of passing through the high-resistant substrate, and heat-conducting layer is formed on the resistance contact layer.
(embodiment 2)
Represented with parts identical among the embodiment 1 by identical reference number, and omit description of them.
Specifically, referring to Fig. 6, be formed on second compound semiconductor layer 54 as the reflective conductive layer 70 of first electrode.Be formed on the bottom of the high-resistant substrate 60 as the light transmission conductive layer 72 of second electrode, contact with first compound semiconductor layer 58 by through hole 62.Pad layer 74 is formed in the flat site of conductive layer 72, covers the bottom of the high-resistant substrate 60.Pad layer 74 is used in bonding this light transmission conductive layer 72 of encapsulation process.
(embodiment 3)
Referring to Fig. 7, the high-resistant substrate pattern 60a is set in the bottom of first compound semiconductor layer 58.The high-resistant substrate pattern 60a is arranged on the middle part of first compound semiconductor layer 58, exposes the other parts of first compound semiconductor layer, 58 bottoms.The bottom of the high-resistant substrate pattern 60a is narrower than the top of the high-resistant substrate pattern 60a, contacts with first compound semiconductor layer 58.The sidewall slightly inclined of the high-resistant substrate pattern 60a is to guarantee the material layer deposit thereon, to cover step well.Form conductive layer 80, to cover the expose portion of the high-resistant substrate pattern 60a and first compound semiconductor layer 58.Conductive layer 80 is used as second electrode and shading.
(embodiment 4)
Referring to Fig. 8, be formed on second compound semiconductor layer 54 as the conductive layer 70 of first electrode.Be formed on the bottom of first compound semiconductor layer 58 with the high-resistant substrate pattern 60a identical among the embodiment 3.Form light transmission conductive layer 82 to cover the expose portion of the high-resistant substrate pattern 60a and first compound semiconductor layer 58.Pad layer 84 is formed on the bottom of the high-resistant substrate pattern 60a.Pad layer 84 is used in the bonding light transmission conductive layer 82 of encapsulation process.
(embodiment 5)
The present invention relates to a kind of semiconductor laser diode, it is characterized in that n type and p type electrode are set in the face of identical direction, and heat-conducting layer is set in the face of opposite direction.
Referring to Fig. 9, first compound semiconductor layer 152 is formed on the substrate 150.Substrate 150 is the high-resistant substrate, for example sapphire substrate or for example GaN or the such III-V compound semiconductor of silicon nitride (SiC) substrate.Best, first compound semiconductor layer 152 is a kind of n type or unadulterated GaN base III-V nitride semiconductor layer, preferably n type GaN layer or GaN layer.In addition, first compound semiconductor layer 152 can be to comprise the Al of estimated rate or AlGaN or the InGaN layer of In.First compound semiconductor layer 152 is divided into first and second region R 1 and the R2.First area R1 is wideer and thicker than second area R2.Between first and second region R 1 and R2, there is step.First electrode 154, n type electrode is formed among the second area R2.The first depression h1 does not expose first compound semiconductor layer 152 from the bottom notch of substrate 150, and the interface separation t between the substrate 150 and first compound semiconductor layer 152.Can change according to the material that is used for substrate 150 in the bottom of low depression h1 and the interval t between first compound semiconductor layer 152.For example, more much smaller as a kind of thermal conductivity of sapphire substrate of the high-resistant substrate than GaN or SiC substrate.Therefore, the interval t that is used for sapphire substrate is expressed as t1, the interval t that is used for GaN or SiC substrate is expressed as t2, sets up the relation of t2＞t1.But irrelevant, best with the type of substrate, bottom and the interval between first compound semiconductor layer 152 of the first depression h1 are so definite, make heat discharge by first compound semiconductor layer 152 effectively, to reduce thermal resistance value.
Shown in the dotted line among Fig. 9, the second depression h2 is formed in the substrate 150 in addition, makes radiating efficiency double.If necessary, more depression can be formed in the substrate 150.
Formation has first heat-conducting layer 156 of excellent heat conductivity, with the bottom of the depression of first on the covering substrate 150 h1.First heat-conducting layer 156 is as the radiative material bed of material, distributes heat from first compound semiconductor layer 152 by this aspect.First heat-conducting layer 156 extends to the bottom of substrate 150, to cover sidewall and the bottom of the first depression h1.A kind of material of selecting the group that first heat-conducting layer 156 is made of the alloy from gold (Au), silver (Ag), platinum (Pt), copper (Cu), nickel (Ni), indium (In) or these materials is formed.The material with excellent heat conductivity or its alloy except listed material above can be used as first heat-conducting layer 156.
As indicated above, since first heat-conducting layer 156 with reduce thickness with the reduction thermal resistance a part of substrate 150 contact, feasible heat from first compound semiconductor layer 152 is distributed by this part fully, and the heat that produces in active layer in the Laser emission process can be got rid of effectively.As a result, can avoid causing temperature to raise current threshold is raise and avoiding the instability of transverse laser mode, thereby improve the performance of laser diode owing to Laser emission.
First covering 158 and resonant layer 160 orders are formed on the first area R1 of first compound semiconductor layer 152.First covering 158 is n type Al/GaN/GaN layers.Resonant layer 160 comprises ducting layer 160a, active layer 160b and the second ducting layer 160c of sequential deposit on first covering 158.First compound semiconductor layer 152, first covering 158 and the first ducting layer 160a are formed for first material layer of induction Laser emission in active layer 160b.First compound semiconductor layer 152 is orlops of first material layer.Active layer 160b is lasing material layer by the load of the such charge carrier of for example hole and electronics, and preferably a kind of GaN base III nitride semiconductor layer with the sub-potential well of volume (MQW) structure is preferably In xAl yGa 1-x-yN layer (wherein 0≤x≤1,0≤y≤1 and x+y≤1).In addition, active layer 160b can be formed by the InGaN layer, wherein comprises the In of estimated rate.The refractive index ratio active layer 160b of the first and second ducting layer 160a and 160c is littler, but bigger than first covering 158 and second covering hereinafter described.The first and second ducting layer 160a and 160c are formed by GaN base III-V nitride semiconductor layer, preferably are respectively n type GaN layer and p type GaN layer.Second covering 162 and second compound semiconductor layer, 164 orders are formed on the resonant layer 160.The second ducting layer 100c, second covering 162 and second compound semiconductor layer 164 are formed for second material layer of induction Laser emission in active layer 160b.Second compound semiconductor layer 164 is the superiors of second material layer.
The description of first and second material layers is used for embodiment hereinafter.
Second covering 162 comprises the convex ridge part 162b that is formed on resonant layer 160 middle parts and forms the periphery 162 of symmetrical ring around convex ridge part 162b that its thickness is less than convex ridge part 162b.Be formed on the top of the convex ridge part 162b of second covering 162 as second compound semiconductor layer 164 of the superiors of second material layer.Second covering 162 still is doped with p type impurity by forming with first covering, 158 identical materials.Second compound semiconductor layer 164 is formed by direct transition section bar material, p type GaN base III-V nitride semiconductor layer for example, and be preferably p type GaN layer.Similar with first compound semiconductor layer 152, second compound semiconductor layer 164 can be formed by GaN layer, AlGaN layer or InGaN layer, wherein comprises the Al or the In of estimated rate.The whole surface coverage of second covering 162 has passivation layer 166.At this, passivation layer 166 extends to the marginal portion of second compound semiconductor layer 164.Second electrode 168 is formed on the passivation layer 166, contacts with the part of second compound semiconductor layer 164 that exposes by passivation layer 166.Second electrode 168 is p type electrodes.
The semiconductor laser diode of describing in the above embodiment of the present invention guarantees sufficient radiating efficiency, and not needing to resemble in the conventional laser diode in order to be connected with the thermal component that separates and accurately to align.Therefore, compare with conventional structure, can be with the rate of finished products manufacturing of lower cost and increase according to semiconductor laser diode of the present invention.
(embodiment 6)
With reference to Figure 10, the first through hole h3 can form by the first depression h1 is extended to first compound semiconductor layer 152 through substrate 150.Although not shown in Figure 10, can form the depression of second shown in a plurality of first through hole h3 and Fig. 9 h2.The surface of the first through hole h3 extend past, first compound semiconductor layer 152 does not expose the basal surface of first compound semiconductor layer 152.First heat-conducting layer 156 not only contacts with first compound semiconductor layer 152 that exposes by through hole h3, and covers the sidewall and the bottom of the substrate 150 that exposes by the first through hole h3.
Because first heat-conducting layer 150 contacts with first compound semiconductor layer 152 by the first through hole h3, therefore can get rid of the heat that in the Laser emission process, in active layer 160b, produces more effectively.
(embodiment 7)
With identical shown in Fig. 9, just the second through hole h4 is formed in the substrate 150 to expose the bottom of first compound semiconductor layer 152 at the semiconductor laser diode shown in Figure 11.The second through hole h4 can align with n type electrode 154, and as shown in Figure 12, perhaps a plurality of second through hole h4 can be formed on the substrate 150.In addition, the second through hole h4 can together be formed in the substrate 150 with the first depression h1 and/or the first through hole h3 that extends in first compound semiconductor layer 152.First heat-conducting layer 156 covers the second through hole h4 or the above-mentioned through hole of any kind and the bottom of substrate 150.
(embodiment 8)
Semiconductor laser diode shown in Figure 12 is identical with the embodiment 7 shown in Figure 11, and just the second through hole h4 is formed in the substrate 150, to expose the part of first compound semiconductor layer 152 that aligns with n type electrode 154.
(embodiment 9)
Identical among semiconductor laser diode shown in Figure 13 and the embodiment 5 shown in Fig. 9; just substrate 150 only is retained on the bottom of first compound semiconductor layer 152 and the part that second covering, 162 convex ridge parts 162 align; and the etched preset thickness in bottom of first compound semiconductor layer 152 around the substrate 150, make win compound semiconductor layer 152 be subjected to that substrate 150 protects do not have step between the etching part.First heat-conducting layer 156 forms the covering substrate 150 and first compound semiconductor layer 152.
(embodiment 10)
Semiconductor laser diode shown in Figure 14 is identical with the embodiment 9 shown in Figure 13, does not just have step in the bottom of first compound semiconductor layer 152, because the bottom of first compound semiconductor layer 152 is not corroded.
(embodiment 11)
The semiconductor laser diode of bottom center position that is retained in first compound semiconductor layer 152 with the substrate 150 shown in Figure 13 is different, in the semiconductor laser diode shown in Figure 15, substrate 150 is displaced to a side of first compound semiconductor layer 152.And first compound semiconductor layer 152 shown in Figure 15 has the part protected by substrate 150 and the step between the expose portion.Form first heat-conducting layer, to cover the bottom of first compound semiconductor layer 152 and substrate 150.
(embodiment 12)
Semiconductor laser diode shown in Figure 16 is identical with the embodiment 11 shown in Figure 15, just has step in first compound semiconductor layer, 152 bottoms.
Describe according to semiconductor laser diode of the present invention with reference to embodiment 13 to 18 below, wherein n type and vertical placement of p type electrode clip active layer between them.
(embodiment 13)
In Figure 17, reference number 150 expression the high-resistant substrate.The high-resistant substrate 150 is a kind of sapphire substrates that hinder erosion.Be used for lasing material layer and be formed on the high-resistant substrate 150, and form and be used for lasing material layer electrode in contact material layer.
Specifically, first compound semiconductor layer 152 is formed on the high-resistant substrate 150.First compound semiconductor layer 152 is formed by GaN base III-V nitride semiconductor layer, and it is a kind of direct transition type, preferably n type GaN layer.Part in first compound semiconductor layer, 152 bottoms exposes by the first through hole h3 that is formed in the high-resistant substrate 150, and conductive layer 175 is formed on the bottom of the high-resistant substrate 150, contacts with the expose portion of first compound semiconductor layer 152.Conductive layer 175 is used as bottom electrode.First covering 158 as n type AlGaN/GaN layer is formed on first compound semiconductor layer 152.The first ducting layer 160a, the active layer 160b and the second ducting layer 160c that form resonant layer 160 are formed on first covering 158.The first and second ducting layer 160a and 160c are formed by GaN base III-V nitride semiconductor layer, and preferably are respectively n type GaN layer and p type GaN layer.The first and second ducting layer 160a and 160c have the refractive index bigger than first covering 152.Active layer 160b is formed by the GaN base III-V nitride semiconductor layer of the In that comprises estimated rate, for example, and the InGaN layer.Active layer 160b has than the first and second ducting layer 160a and the bigger refractive index of 160c.Distribute because resonant layer 160 has such index profile, promptly as indicated above have maximum refractive index at middle section, and outwards reduce gradually, and therefore the Laser emission efficient in active layer 160b improves along with reducing of optical loss.Second covering 162 is formed on the second ducting layer 160c.Second covering 162 is by being formed with first covering, 158 identical materials layers, but mixes by p type impurity.Second covering 162 has the periphery 162a around convex ridge part 162a and the convex ridge part 162a in the middle, and it parallels with active layer 160b and has the littler thickness than convex ridge part 162a.Second compound semiconductor layer 164 is formed on the top of the convex ridge part 162b of second covering 162.Second compound semiconductor layer 164 still is doped with p type impurity by forming with first compound semiconductor layer, 152 identical materials layers.The whole surface coverage of second covering 162 has passivation layer 166.Passivation layer 166 contacts relatively symmetrically with the both sides of second compound semiconductor layer 164.Conductive layer 168 is formed on the passivation layer 166 and contacts with the part of second compound semiconductor layer 164 that exposes by passivation layer 166.Conductive layer 168 is used as top electrode.
(embodiment 14)
Semiconductor laser diode shown in Figure 18 is identical with the embodiment 13 shown in Fig. 7, just the high-resistant substrate pattern 150a is retained in the bottom center part of first compound semiconductor layer 152, and forms conductive layer 175 to cover the bottom of first compound semiconductor layer 152 and the high-resistant substrate pattern 150a.
(embodiment 15)
Referring to Figure 19, order forms first compound semiconductor layer 152, first covering 158, resonant layer 160, second covering 162 and second compound semiconductor layer 164, passivation layer 166 and second electrode 168 on substrate 150.Form the first through hole h3 by substrate 150, to expose first compound semiconductor layer 152.Best, the first through hole h3 and second electrode 168 align, and in addition, the first through hole h3 can be displaced to any side with respect to second electrode 168.
Shown in dotted line, the first through hole h3 can together be formed in the substrate 150 with the first depression h1.Because the existence of the first depression h1, radiating efficiency further improves.
Form conductive layer 175, to cover bottom fully by the first through hole h3 exposed portions and substrate 150.Conductive layer 175 comprises the resistance contact layer 180 that touches with bottom connection by through hole h3 exposed portions and substrate 150, and is formed on second heat-conducting layer 176 on the resistance contact layer 180.Second heat-conducting layer not only is used for distributing the heat that produces at active layer 160b, and is used as first (n type) electrode.Resistance contact layer 180 is used to mate the electrical potential difference between second heat-conducting layer 176 and second compound semiconductor layer 152.
In the present embodiment, n type electrode is also as heat-conducting layer.
(embodiment 16)
At the semiconductor laser diode shown in Figure 20, the high-resistant substrate pattern 150a is retained on the part that the convex ridge part 162b of the bottom of first compound semiconductor layer 152 and second covering 162 aligns.Form resistance contact layer 180 covering first compound semiconductor layer 152 and the high-resistant substrate pattern 150a, and second heat-conducting layer 176 is formed on the resistance contact layer 180.Shown in dotted line, the part of first compound semiconductor layer 152 that is exposed by the high-resistant substrate pattern 150a may etched preset thickness.In this case, between the etched part of first compound semiconductor layer 152 and the part protected by the high-resistant substrate pattern 150a, there is step.
(embodiment 17)
Semiconductor laser diode shown in Figure 21 is identical with the embodiment 15 shown in Figure 19, and just the second through hole h4 is formed in the substrate 150, with the part of the bottom that exposes first compound semiconductor layer 152.Form resistance contact layer 180, with the expose portion of the covering substrate 150 and first compound semiconductor layer 152, second heat-conducting layer that is used as n type electrode is formed on the resistance contact layer 180.Best, the second through hole h4 and second electrode 168 align.The second through hole h4 can be offset to a side with respect to the part that aligns with second electrode 168.
A plurality of second through hole h4 can be formed in the substrate 150.In this case, only one second through hole h4 can be coated with the resistance contact layer, is used as current path, and the remaining second through hole h4 only is used to improve radiating efficiency.
In addition, the first depression h1 can be formed in the substrate 150 in addition with the second through hole h4.
(embodiment 18)
In the semiconductor laser diode shown in Figure 22, substrate 150 is displaced to bottom one side of first compound semiconductor layer 152 from bottom center.Form resistance contact layer 180, covering the bottom of first compound semiconductor layer 152 and substrate pattern 150, and first heat-conducting layer 176 that is used as n type electrode is formed on the resistance contact layer 180.Although not shown in Figure 12, do not have the base section of first compound semiconductor layer 152 of substrate pattern 150 can etched preset thickness, thereby step occurs in the bottom of first compound semiconductor layer 152.
According to described various heat dissipation element in the above-described embodiments, wherein form directly or indirectly with first compound semiconductor layer 152 descend contacted first and second heat-conducting layers 156 of material layer or 176 most, can construct other laser diode.For example, by removing substrate 150, first heat-conducting layer 156 can form with first compound semiconductor layer, 152 bottom connections as first material layer under and touch, perhaps by removing substrate 150, second heat-conducting layer 176 can be formed on the resistance contact layer 180, touches with the bottom connection of first compound semiconductor layer 152.
Especially, after forming p type electrode 168, in etch processes subsequently, the removing fully of this substrate, thus do not keep substrate 150.Then, the bottom connection that forms first heat-conducting layer 156 and first compound semiconductor layer 152 touches.In addition, form resistance contact layer 180 and contact with the basal surface of first compound semiconductor layer 152, second heat-conducting layer 176 that is used as n type electrode then is formed on the resistance contact layer 180.
The method that is used to make according to luminescent device of the present invention is described below with reference to hereinafter embodiment.
(embodiment 1)
With reference to Figure 23, first compound semiconductor layer 202 is formed on the high-resistant substrate 200.The high-resistant substrate 200 is formed by resistance erosion substrate, is preferably sapphire substrate.First compound semiconductor layer 202 is formed by GaN base III-V nitride semiconductor layer, and preferably direct transition type compound semiconductor layer.Indirect transition type compound semiconductor layer can be used as first compound semiconductor layer 202.Direct transition type compound semiconductor layer is n type GaN layer preferably.First compound semiconductor layer 202 can be formed by plain GaN based compound semiconductor layer, for example, and unadulterated GaN layer, InGaN or AlGaN layer.Active layer 204 is preferably formed by GaN base III-V nitride semiconductor layer, and it preferably has the MQW structure.Best, active layer 204 is by In xAl yGa 1-x-yThe N layer forms (wherein 0≤x≤1,0≤y≤1 and x+y≤1).Second compound semiconductor layer 206 and light transmission conductive layer 208 orders that see through the light that produces in active 204 are formed on the active layer 204.Second compound semiconductor layer 206 still is doped with p type impurity preferably by forming with the first compound semiconductor layer identical materials layer.Second compound semiconductor layer 206 is for example formed by p type GaN layer.Similar with first compound semiconductor layer 202, second compound semiconductor layer 206 can be formed by unadulterated material layer.In this case, second compound semiconductor layer 206 is by being formed with first compound semiconductor layer, 202 identical materials layers.Light transmission conductive layer 208 is used as top electrode.
The photosensitive layer (not shown) is deposited on the light transmission conductive layer 208, and is patterned to photosensitive pattern 212, exposes a zone of the light transmission conductive layer 208 that will form pad layer by this pattern.Photosensitive pattern 212 is formed by the photoresist pattern.Pad conductive layer 210 is formed on the photosensitive pattern 212, to cover the exposed region of light transmission conductive layer 208.Then, remove photosensitive pattern 212.In the process of removing photosensitive pattern 212, the pad conductive layer 210 on photosensitive pattern 212 also is removed.Be used for frosted and do not influence the pad conductive layer 210 that is formed on the photic zone 208 with the chemical material of peeling off photosensitive pattern 212.After removing photosensitive pattern 212, only pad conductive layer 210a is retained on the light transmission conductive layer 208, as shown in figure 24.Hereinafter, pad conductive pattern 210a is called as pad layer 210a.Pad layer 210a is used in the bonding light transmission conductive layer 208 of packaging technology.
Referring to Figure 25, the resulting structures that is formed with pad layer 210a thereon is squeezed, and makes the high-resistant substrate 200 towards last.The whole basal surface of high resistive substrate 200 is received and is ground and polishing.Then, the mask layer (not shown) is formed on the bottom of the high-resistant substrate 200.Mask layer can be soft or hard mask layer.Best, softmask is formed by photoresist layer, and hard mask layer formed by silicon oxide layer or metal level, for example nickel (Ni) layer.Mask layer is patterned to mask pattern 214, exposes the zone that will form through hole in the bottom of the high-resistant substrate 200 by this pattern.Utilize mask pattern 214 as mask etching the high-resistant substrate bottom-exposed zone, up to exposing first compound semiconductor layer 202.In this case, utilize Cl 2Or BCl 3Gas carries out dry corrosion as reaction gas to the resistive substrate 200 of height.This reaction gas that is used for dry corrosion technology can comprise argon gas (Ar) in addition.
In the following embodiments, with the description of omitting to the dry corrosion technology that is applied to the high-resistant substrate.
With reference to Figure 26,, in this high-resistant substrate 200, form the through hole 216 of the bottom that exposes first compound semiconductor layer 202 by corrosion the high-resistant substrate 200.Then remove mask pattern 214.
With reference to Figure 27, conductive layer 218 is formed on the bottom that forms the high-resistant substrate 200 of through hole 216 therein, and preferably the bottom connection with first compound semiconductor layer 202 that exposes by through hole 216 touches.Conductive layer 216 is as bottom electrode.Because the high-resistant substrate 200 is erosion-resisting resistance corrosion materials, therefore the through hole 261 that is formed by etching has the sidewall of slightly inclined, thereby has improved the performance that covers step with conductive layer 218.As a result, form conductive layer 218 with uneven gauge.
The result, obtain the top emission type light-emitting diode, the through hole 216 that wherein exposes first compound semiconductor layer, 202 bottoms is formed in the high resistive substrate 200, forms on it to be used as the light transmission conductive layer 208 of top electrode, the conductive layer 218 that is used as bottom electrode, active layer 204, first and second compound semiconductor layers 202 and 206 and pad layer 210a.
(embodiment 2)
Referring to Figure 28, order forms first compound semiconductor layer 202, active layer 204 and second compound semiconductor layer 206 on the high-resistant substrate 200.In the description of this omission, because they are identical with embodiment 1 to first compound semiconductor layer 202, active layer 204 and second compound semiconductor layer 206.Conductive layer 220 is formed on second compound semiconductor layer 206.At this, conductive layer 220 is used as top electrode, and preferably has enough thickness to block the light that produces in active layer 204.
As shown in Example 1, the structure of gained is squeezed, and makes the bottom faces of the high-resistant substrate 200 make progress, as shown in Figure 29.Then in the high-resistant substrate 200, form through hole 216, the bottom of the compound semiconductor layer 202 of winning is exposed by through hole 216.Then, on the bottom of the high-resistant substrate 200, be preferably whole bottom, form light transmission conductive layer 222, contact with the expose portion of first compound semiconductor layer 202.Light transmission conductive layer 222 is used as bottom electrode.Pad conductive layer (not shown) is formed on the light transmission conductive layer 222 and is patterned to pad layer 224.Pad layer 224 is used in the bonding light transmission conductive layer 222 of packaging technology.
As a result, obtain a light-emitting diode, wherein identical with embodiment 1, the through hole 216 that exposes the bottom of first compound semiconductor layer 202 is formed in the high-resistant substrate 200.Be with the light-emitting diode difference of embodiment 1, the light-emitting diode of embodiment 2 is a kind of bottom-emission type diode, it is transparent wherein being formed on the high resistant erosion substrate 200 bottom electrode that the bottom connection with first compound semiconductor layer 202 touches, and pad layer 24 is formed on the bottom of bottom electrode.
(embodiment 3)
Identical with embodiment 1, present embodiment relates to a kind of method that is used to make the top emission type light-emitting diode.But the technology after etching the high-resistant substrate 200 is different with embodiment 1.Carry out technical process till the bottom of the high-resistant substrate 200 ground and polish according to embodiment 1.
Then, as shown in Figure 3, only cover the presumptive area of the high-resistant substrate 200 and the mask pattern 226 of exposure predetermined portions and be formed on the bottom of the high-resistant substrate 200.Best, mask pattern 226 is formed on the bottom center of the high-resistant substrate 200.Utilize mask pattern 226 to come the whole exposed region of etching the high-resistant substrate 200, come out up to the bottom-exposed of first compound semiconductor layer 202 as etching mask.
Referring to Figure 31; the bottom except its middle section of the high resistive substrate 200 of etching; the high-resistant substrate 200a is retained in the bottom center of first compound semiconductor layer 202 as a result, makes on the bottom of the compound semiconductor layer 202 of winning to be exposed except the zone of being protected by the high-resistant substrate pattern 200a.In etching process procedure, the exposed region of first compound semiconductor layer 202 is removed preset thickness.Because the resistance of the high-resistant substrate 200 erosion property makes the sidewall of the high-resistant substrate 200a have positive slope.In other words, the region area ratio by the high-resistant substrate pattern 200a that mask pattern 226 covered is littler with the zone of first compound semiconductor layer, 202 contacted the high-resistant substrate pattern 200a.
After removing mask pattern 226, conductive layer 118 is formed on the bottom of first compound semiconductor layer 202 that goes out by etch exposed, and to cover the high-resistant substrate pattern 200a, as shown in Figure 32, this conductive layer 228 is used as bottom electrode.
The result, obtain a kind of top emission type light-emitting diode, wherein the high-resistant substrate pattern 200a contacts with the bottom center of first compound semiconductor layer 202, and reflective bottom electrode 228 touches with the high-resistant substrate pattern 200a first compound semiconductor layer, 202 bottom connections on every side.
(embodiment 4)
Present embodiment is the combination of features according to the method for manufacturing light-emitting of embodiment 2 and 3.
Specifically, the technology till the bottom of the high-resistant substrate 200 is polished is carried out according to embodiment 2.Then, as shown in Figure 33, the mask pattern 230 that is used to form the high-resistant substrate pattern 200a shown in Figure 34 is formed on the bottom of the high-resistant substrate 200.Utilize mask pattern 230 to come etching to pass through the bottom of the high-resistant substrate 200 of mask pattern 240 exposures, and remove mask pattern 230 as etching mask.As a result, the high-resistant substrate pattern 200a as described in example 3 above is retained in the bottom center of first compound semiconductor layer 202.For the bottom that is formed on first compound semiconductor layer 202 from the transparent light transmission conductive layer 232 of the light of active layer 204, to cover the high-resistant substrate pattern 200a.Light transmission conductive layer 232 is used as bottom electrode.Pad conductive layer (not shown) is formed on the light transmission conductive layer 232, and is patterned to pad layer 234.Pad layer 234 can be formed in any zone of light transmission conductive layer 232, but considers bonding convenience, and it is preferably on the bottom section of the high-resistant substrate pattern 200a.
The result, obtain bottom-emission type light-emitting diode, wherein the high-resistant substrate pattern 200a contacts with the bottom center of first compound semiconductor layer 202, and the bottom electrode 232 of printing opacity touches with the bottom connection of first compound semiconductor layer 202 around the high-resistant substrate pattern 200a.
(embodiment 5)
Present embodiment relates to a kind of method that is used for making the semiconductor laser diode of embodiment 13.Figure 35 is illustrated in the technology that is formed for lasing material layer in the high-resistant substrate in proper order.
Specifically, with reference to Figure 35, order forms first compound semiconductor layer 302, first covering 304, first ducting layer 306, active layer 308, second ducting layer 310, second covering 312 and second compound semiconductor layer 314 on the high-resistant substrate 300.Active layer 308 and first and second ducting layers 306 and 310 are formed for lasing resonant layer.Best, the high-resistant substrate 300 is sapphire substrates of resistance erosion.First and second compound semiconductor layers 302 and 314 are all formed by GaN base III-V nitride semiconductor layer, are preferably direct transition type compound layer, and preferably are respectively n type GaN layer and p type GaN layer.Indirect transition type GaN base III-V nitride semiconductor layer can be used for first and second compound semiconductor layers 302 and 314, and is not limited to the type of transition.In addition, first and second compound semiconductor layers 302 and 314 can or comprise the Al of estimated rate or InGaN layer or the AlGaN layer of In formed by unadulterated GaN layer.The material that is used for first and second compound semiconductor layers 302 and 314 is not limited to GaN sill and nitride.
Active layer 308 is preferably formed by GaN base III-V nitride semiconductor layer, and it preferably has the MQW structure.Best, active layer 308 is by In xAl yGa 1-x-yThe N layer forms (wherein 0≤x≤1,0≤y≤1 and x+y≤1).First and second coverings 304 and 312 have respectively than first and second ducting layers 306 and 310 littler refractive indexes, and its refractive index is less than active layer 308.Best, first covering 304 is formed by n type AlGaN/GaN layer, and second covering 312 is formed by p type AlGaN/GaN layer.First and second ducting layers 306 and 310 are formed by refractive index the one the second coverings 304 and 312 bigger material layers respectively, and are preferably GaN base III-V nitride semiconductor layer.Best, first and second ducting layers 306 and 310 are formed by n type GaN layer and p type GaN layer respectively.First and second ducting layers 306 and 310 and first and second coverings 304 and 312 are only reflecting light from active layer fully towards active layer 308 respectively with the perpendicular direction of axle of resonant layer, light is limited to active layer 308.For this purpose, preferably active layer 308 is made by refractive index ratio first and second ducting layers 306 and 310 bigger materials.Active layer 308 is lasing material layers.Active layer 308 is preferably formed by GaN base III-V nitride semiconductor layer, preferably comprises the InGaN layer of the In of estimated rate.Active layer 308 can be formed by any III-V hi-nitride semiconductor material layer except the GaN based material layer.In this case, first and second ducting layers 306 and 310, first and second coverings 304 and 312 and first and second compound semiconductor layers 302 and 314 do as one likes can form with other material layer that active layer 308 is complementary.
Then, the photosensitive layer (not shown) is deposited on second compound semiconductor layer 314, and to being patterned into photosensitive pattern 316, to cover the presumptive area of second compound semiconductor layer 314.Photosensitive pattern 316 is the mask patterns that are used for second covering 312 is patterned into ridge-shape.
With reference to Figure 36, usability light pattern 316 is as etching mask, and the exposed region of etching second compound semiconductor layer 314 is then the expose portion etching preset thickness of second covering.As a result, second covering 312 becomes (or rib) structure that has convex ridge, and the middle part of second covering 312 that wherein is formed with photosensitive pattern 316 on it is thicker relatively, and other outer peripheral areas except second covering, 312 middle parts is thinner relatively.The second compound semiconductor pattern 314a is retained on the convex ridge of second covering 312.
After removing photosensitive pattern 316, as shown in Figure 37, on covering 312, form passivation layer 318 with convex ridge structure, and patterned to expose a zone, preferably expose the middle part of the second compound semiconductor pattern 314a.As a result, passivation layer 318 is formed on second covering 312, symmetrically around and contact the second compound semiconductor pattern 314a.Conductive layer 320 is formed on the passivation layer 318, contacts with the exposed region of the second compound semiconductor pattern 314a.Conductive layer 320 is used as top electrode.
With reference to Figure 38, after forming conductive layer 320, the structure of gained is squeezed, and makes the bottom of the high-resistant substrate 300 make progress.Then the high-resistant substrate 300 is ground and is polished, the thickness of the high-resistant substrate 300 is reduced to the degree that still can support this device.The mask layer (not shown) is formed on the polishing bottom of the high-resistant substrate 300.This mask layer by photoresist layer, silicon oxide layer or for example the such metal level of nickel dam formed.This mask layer is patterned to mask pattern 322, exposes the zone that will form through hole in the high-resistant substrate 300 bottoms.Utilize mask pattern 322 to come the exposed region of etching the high-resistant substrate 300, come out up to the bottom-exposed of first compound semiconductor layer 302 as etching mask.
As a result, in the high-resistant substrate 300, form the zone of the bottom that exposes first compound semiconductor layer 302, as shown in Figure 39.After removing mask pattern 322 (if mask pattern 322 is for example silicon oxide pattern or the so hard mask pattern of metal pattern, then unnecessary this mask pattern 322 of removing), as shown in Figure 40, on the bottom of the high-resistant substrate 300, form conductive layer 326, best, cover the whole zone of the high-resistant substrate 300 that exposes by through hole 324, touch with the bottom connection of first compound semiconductor layer 302 that exposes by through hole 324.Although not shown in Figure 40, conductive layer 326 can be made of multilayer.For example, resistance contact layer (represented by the reference number in Figure 19 or 21 80) can be formed on the bottom of the high-resistant substrate 300, touch with the bottom connection of first compound semiconductor layer 302 that exposes by through hole 324, heat-conducting layer (represented by the reference number in Figure 19 or 21 76) can be formed on the resistance contact layer then.Conductive layer 326 is used as bottom electrode, if do not need to consider the heat that produces in the Laser emission process, then conductive layer 36 can filling vias 324.
As a result, obtain a laser diode, wherein be used for lasing material layer and be formed between the opposed facing electrode, and form bottom electrode and contact with the material layer that is used for launching laser by the through hole that is formed on the high-resistant substrate.
(embodiment 6)
The present invention relates to a kind of method that is used to make the semiconductor laser diode of embodiment 14.In the present embodiment, carry out technical process till the high-resistant substrate 300 bottoms are polished according to embodiment 5.
According to Figure 41, on the high-resistant substrate 300 bottoms, form mask pattern 328, to cover predetermined zone, the bottom center of the high-resistant substrate 300 preferably, and expose other zone.Utilize mask pattern 328 to come the exposed region of etching the high-resistant substrate 300, come out up to the bottom-exposed of first compound semiconductor layer 302 as etching mask.The result, keep the presumptive area that covers first compound semiconductor layer 302, preferably cover the high-resistant substrate pattern 300a of its bottom center, and be exposed, as shown in Figure 42 in the bottom of the high-resistant substrate pattern 300a first compound semiconductor layer 302 on every side.
After removing mask pattern 328, on the exposed region of first compound semiconductor layer 302, form conductive layer 330, to cover the high-resistant substrate pattern 300a fully, as shown in Figure 43.Conductive layer 330 is used as top electrode.Because the sidewall of the high-resistant substrate pattern 300a has positive slope, therefore can form conductive layer 330 with uniform thickness.Conductive layer 330 can be formed by multilayer, as about among the embodiment 5 of the method for making laser diode.
As a result, obtain a laser diode, wherein be used for lasing material layer and be formed between the opposed facing electrode, and bottom electrode contacts with being used for lasing material layer, to cover the high-resistant substrate pattern.
In addition, in the high-resistant substrate 300, form through hole 332, can carry out the separation of luminescent device with in the process that exposes first compound semiconductor layer, 302 bottoms.Etch process is applied to making among the embodiment of luminescent device, and wherein through hole is formed in the high-resistant substrate 300.
Especially, as shown in Figure 44, in the high-resistant substrate 300, form in the process of through hole 32, can in the borderline region of luminescent device, be formed for the groove 334 of discrete device simultaneously.Thus, needn't carry out the separation diamond cutting process that is used for device isolation, but can separate this luminescent device by pressing to the opposite thruster of a side that forms groove 334.In Figure 44, reference number A represents to form the zone of light-emitting diode.
Although the present invention carries out concrete description with reference to preferred embodiment, above preferred embodiment only is illustrative, rather than to the restriction of scope of the present invention.For example, one of skill in the art can recognize, is used for can forming before the polishing of the bottom of the high-resistant substrate at the protective layer that forms structure on the high-resistant substrate.And luminous material layer can change with the structure that is used for lasing material layer.For laser diode, the structure between active layer and the top electrode can be other shape except convex ridge.Spirit of the present invention can expand to the waveguide laser diode of regulating refractive index, and it is extremely objective to regulate the waveguide laser two that gains.Professional in this area is appreciated that the change on the form of can making and the details and does not break away from the spirit and scope of the present invention that defined by claims.
As indicated above, be set to mutually in the face of centering on light-emitting zone according to two electrodes in the luminescent device of the present invention.For example, two electrodes and the light-emitting zone vertical alignment between them.Therefore, in encapsulation step, only need welding lead, therefore simplify this technical process and reduce time loss.In addition, unlike the prior art, an electrode is not formed on dark etching area, thereby has reduced the mortality of welding, and increase rate of finished products.With to be etched with the prior art that exposes n type GaN layer deeply after forming electrode pattern different, by on substrate, forming electrode, thus the manufacturing process of simplification photoetching process and entire device.Laser diode according to the present invention is included in the substrate bottom and forms the material layer with excellent heat conductivity rate, contact with the n section bar bed of material, make the heat that in the Laser emission process, in active layer, produces effectively to get rid of, and do not need to carry out conventional flip-chip welding procedure.Therefore, according to the present invention, can avoid the decline (reduce with respect to conventional method 1/4 processing time) of device performance and increase rate of finished products by reducing the processing time.

Claims (35)

1. luminescent device, comprising:
The high-resistant substrate;
Be provided with first and second electrodes of the high-resistant substrate therebetween; And
Be formed between the high-resistant substrate and second electrode and be used for lasing material layer,
Wherein the high-resistant substrate zone is removed, and first electrode contacts with this material layer by being removed of the high-resistant substrate is regional.
2. luminescent device according to claim 1 is characterized in that, is used for lasing material layer and comprises:
Resonant layer;
First and second coverings are provided with this resonant layer between them;
Be separately positioned on first and second compound semiconductor layers on first and second coverings; And
Passivation layer, it is formed between second covering and second electrode, contacts with a zone of second compound semiconductor layer according to symmetrical manner,
Wherein the bottom of first compound semiconductor layer contacts with first electrode by the zone that is removed of the high-resistant substrate.
3. luminescent device according to claim 2 is characterized in that, this resonant layer comprises:
Lasing active layer;
Be formed on first ducting layer between the active layer and first covering; And
Be formed on second ducting layer between the active layer and second covering.
4. luminescent device according to claim 2 is characterized in that the through hole that exposes the bottom of first compound semiconductor layer is formed in the high-resistant substrate, and first electrode contacts with first compound semiconductor layer by this through hole.
5. luminescent device according to claim 2 is characterized in that, the high-resistant substrate only covers a zone of first compound semiconductor layer bottom, and the first electrode contact portion or whole first compound semiconductor layer.
6. according to claim 1,2,4 or 5 described luminescent devices is characterized in that this high-resistant substrate is a sapphire substrate.
7. according to the described luminescent device of claim 2,4 or 5, it is characterized in that first compound semiconductor layer is n type or unadulterated GaN base III-V nitride semiconductor layer.
8. luminescent device according to claim 2 is characterized in that, second compound semiconductor layer is a p type GaN base III-V nitride semiconductor layer.
9. luminescent device according to claim 2 is characterized in that active layer is In xAl yGa 1-x-yN layer, wherein 0≤x≤1,0≤y≤1 and x+y≤1.
10. luminescent device according to claim 2 is characterized in that, active layer is the In with the sub-potential well of volume (MQW) structure xAl yGa 1-x-yN layer, wherein 0≤x≤1,0≤y≤1 and x+y≤1.
11. luminescent device according to claim 2, it is characterized in that, first electrode comprises the resistance contact layer and is formed on heat-conducting layer on this resistance contact layer, and described resistance contact layer covers the zone that is removed first compound semiconductor layer that the zone exposes by the high-resistant substrate.
12. a luminescent device, comprising:
Luminous active layer;
First and second material layers are provided with this active layer between them, first and second material layers are used for responding at active layer by producing the Laser emission that laser forms;
First electrode, it forms with the orlop of first material layer and contacts;
Second electrode, it forms with the superiors of restricted mode with second material layer and contacts; And
Heat dissipation element, its orlop with first material layer contacts, and is used for dispelling the heat effectively.
13. luminescent device according to claim 12 is characterized in that, heat dissipation element is a heat-conducting layer, and this heat-conducting layer contacts with a undermost zone of first material layer, and substrate is present on the undermost remaining area of first material layer.
14. luminescent device according to claim 13 is characterized in that, heat-conducting layer contacts with the undermost zone of first material layer by the through hole that is formed in this substrate.
15. luminescent device according to claim 14 is characterized in that, the depression and the through hole that extend in the orlop of first material layer together are formed in this substrate.
16. luminescent device according to claim 14 is characterized in that, this through hole is formed in the zone of this substrate and aligns with first electrode.
17. luminescent device according to claim 14 is characterized in that, a plurality of through holes are formed in this substrate.
18. any one the described luminescent device according in the claim 14 to 17 is characterized in that, the orlop of this through hole extend past first material layer.
19. luminescent device according to claim 13, it is characterized in that, the etched preset thickness in undermost zone of first material layer makes a step appear at the undermost zone of first material layer that has substrate and does not exist between the undermost etched zone of substrate.
20. luminescent device according to claim 15 is characterized in that, a part of heat-conducting layer is by the orlop indirect contact of this depression with first material layer.
21. luminescent device according to claim 20 is characterized in that, a plurality of being recessed to form in this substrate.
22. luminescent device according to claim 20 is characterized in that, extends through the through hole that descends material layer most and is formed in addition in this substrate.
23. according to claim 12,13,14 or 20 described luminescent devices is characterized in that, heat-conducting layer one of is selected from formed group of gold (Au), silver (Ag), copper (Cu), nickel (Ni) and the indium (In) at least.
24. according to claim 13,14,15,17,19,21 and 23 described luminescent devices is characterized in that, this substrate is the high-resistant substrate, silicon nitride (SiC) substrate or III-V compound semiconductor substrate.
25. a method that is used to make luminescent device, this method comprises:
(a) on the high-resistant substrate, be formed for lasing material layer;
(b) on this material layer, form first electrode;
(c) etching the high-resistant substrate zone is so that a zone of exposed material layer; And
(d) on the bottom of the high-resistant substrate, form second electrode, with the exposed region of layer of cover material partially or completely.
26. method according to claim 25 is characterized in that, step (a) comprising:
Order forms first compound semiconductor layer, first covering, resonant layer, second covering and second compound semiconductor layer on the high-resistant substrate;
On second compound semiconductor layer, form mask pattern to cover the presumptive area of second compound semiconductor layer;
Utilize this mask pattern as etching mask second compound semiconductor layer and second covering to be carried out composition, second covering forms ridge-shape;
Remove this mask pattern; And
Form passivation layer being patterned on second covering of ridge-shape, contact with a zone of second compound semiconductor layer of composition.
27. method according to claim 26 is characterized in that, step (c) comprises;
The bottom of polishing the high-resistant substrate; And
Expose the bottom of first compound semiconductor layer by the zone of etching the high-resistant substrate.
28. method according to claim 27 is characterized in that, this high-resistant substrate is a sapphire substrate.
29. method according to claim 27 is characterized in that, the bottom of the high-resistant substrate is to polish by grinding or finish grinding.
30. according to claim 25 or 27 described methods, it is characterized in that, with comprising Cl at least 2Or BCl 3Reacting gas this high-resistant substrate is carried out dry ecthing.
31. method according to claim 30 is characterized in that, this reacting gas further comprises Ar gas.
32. method according to claim 27 is characterized in that, this high-resistant substrate of etching exposes the bottom of first compound semiconductor layer to form through hole by this through hole.
33. method according to claim 27 is characterized in that, this high-resistant substrate of etching is to remove other remaining areas outside the high-resistant substrate zone.
34. method according to claim 26 is characterized in that, forms first ducting layer, active layer and second ducting layer by order on first covering and forms resonant layer.
35. method according to claim 25 is characterized in that, step (d) comprising:
On the bottom of the high-resistant substrate, form the resistance contact layer, to cover the exposed region of this material layer partially or completely; And
On this resistance contact layer, form heat-conducting layer.
CNB2004100768629A 2000-12-18 2001-12-18 GaN-base III-V group nitride light emitting diode and method for manufacturing same Expired - Fee Related CN100461469C (en)

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CN104659163A (en) * 2008-07-21 2015-05-27 台湾积体电路制造股份有限公司 Vertical III-Nitride Light Emitting Diodes on Patterned Substrates with Embedded Bottom Electrodes
CN108133984A (en) * 2018-01-30 2018-06-08 厦门乾照光电股份有限公司 A kind of light emitting diode with vertical structure and preparation method thereof
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US6713789B1 (en) * 1999-03-31 2004-03-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method of producing the same
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CN104659163A (en) * 2008-07-21 2015-05-27 台湾积体电路制造股份有限公司 Vertical III-Nitride Light Emitting Diodes on Patterned Substrates with Embedded Bottom Electrodes
CN101771020B (en) * 2009-01-05 2012-05-23 台湾积体电路制造股份有限公司 Through-silicon via with scalloped sidewalls
CN108133984A (en) * 2018-01-30 2018-06-08 厦门乾照光电股份有限公司 A kind of light emitting diode with vertical structure and preparation method thereof
CN108133984B (en) * 2018-01-30 2020-05-19 厦门乾照光电股份有限公司 Vertical structure light-emitting diode and manufacturing method thereof
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CN110660844B (en) * 2018-06-29 2022-11-04 台湾积体电路制造股份有限公司 Semiconductor device and method of forming a semiconductor device

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