CN1630038A - Etching solution and method for manufacturing conducting lug by selectively removing barrier layer with the same - Google Patents
Etching solution and method for manufacturing conducting lug by selectively removing barrier layer with the same Download PDFInfo
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- CN1630038A CN1630038A CNA2003101214870A CN200310121487A CN1630038A CN 1630038 A CN1630038 A CN 1630038A CN A2003101214870 A CNA2003101214870 A CN A2003101214870A CN 200310121487 A CN200310121487 A CN 200310121487A CN 1630038 A CN1630038 A CN 1630038A
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- barrier layer
- conductive projection
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- etching solution
- conductive
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- 230000004888 barrier function Effects 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000005530 etching Methods 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 claims description 7
- 229910052939 potassium sulfate Inorganic materials 0.000 claims description 7
- 235000011151 potassium sulphates Nutrition 0.000 claims description 7
- 239000011135 tin Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 238000005219 brazing Methods 0.000 claims description 4
- 239000011133 lead Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 4
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims 6
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims 3
- 229960004889 salicylic acid Drugs 0.000 claims 3
- 239000000463 material Substances 0.000 abstract description 8
- 238000000576 coating method Methods 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000005272 metallurgy Methods 0.000 abstract description 5
- 238000002161 passivation Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 35
- 239000000243 solution Substances 0.000 description 12
- 239000004411 aluminium Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 238000010168 coupling process Methods 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 8
- 230000008878 coupling Effects 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 5
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 4
- 239000012964 benzotriazole Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229960002163 hydrogen peroxide Drugs 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229940093914 potassium sulfate Drugs 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- DNVNXSAGOKPPKP-UHFFFAOYSA-N 2-hydroxybenzoic acid;2-sulfooxybenzoic acid Chemical compound OC(=O)C1=CC=CC=C1O.OC(=O)C1=CC=CC=C1OS(O)(=O)=O DNVNXSAGOKPPKP-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical group [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910007116 SnPb Inorganic materials 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000010415 tropism Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000011366 tin-based material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/1147—Manufacturing methods using a lift-off mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/118—Post-treatment of the bump connector
- H01L2224/11848—Thermal treatments, e.g. annealing, controlled cooling
- H01L2224/11849—Reflowing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
An etching solution and the method for selectively removing barrier layer conductive bonding block contains providing a semiconductor substrate with prepared IC assembly wherein a metal layer or bonding pad to form a passivation layer on said substrate and exposing the surface of formed metal layer or bonding pad, forming a barrier layer on the passivation and exposed metal layer or bonding pad, forming a conductive under bump metallurgy layer on said barrier layer, defining boding block pattern on said conductive under bump metallurgy layer in coating exposing mode to form a hole, forming a conductive boding block layer to fill in said hole, removing residual coating material, etching said conductive under bump metallurgy layer, removing said barrier layer by special etching solution, dissolving and back flowing conductive bonding block by thermal process to form a spherical conductive boding block.
Description
Technical field
The invention relates to the etch recipe of a kind of semiconductor soldering projection (solder bump) processing procedure, is that the circuit structure that utilizes the etching solution of specific composition to avoid exposing comes to harm when etching.
Background technology
In manufacture of semiconductor, after the various assemblies on the wafer and interconnect are finished, can form connection gasket (bonding pad) and protective layer in the superiors, this protective layer be used for preventing that semiconductor subassembly and interconnect from being polluted, the influence of scratch and moisture.Follow-uply then can utilize little shadow and etch process; definition forms an opening on protective layer; expose to the open air out so that be arranged at the connection gasket (bonding pad) of protective layer bottom, make assembly see through the soldering projection (solder bump) on interconnect, weld pad and the weld pad and form and be electrically connected with the external circuitry plate.And the mode that is electrically connected at present then adopts crystalline substance (flip chip) technology of covering mostly.
The Flip Chip general reference of broad sense is carried out electricity through a metallic conductor with the external circuitry plate in ventricumbent mode and is engaged after chip is overturn.Generally speaking, metallic conductor includes metal coupling (metal bump), winding engages (tape-automated bonding), anisotropic conducting resinl (anisotropicconductive adhesives), macromolecular convex (polymer bump), routing balling-up (stud bump) or the like, this is wherein ripe with the metal coupling technology, also is widely used on the product of volume production.The forming method of metal coupling is a lot, common person has evaporation, sputter, plating, printing, routing moulding, injection molding etc., the material of metal coupling then according to different demands, has high temperature tin lead (SnPb), low temperature tin lead, gold, nickel, copper etc. to cover crystalline substance and plants ball (solder balls).
Please refer to Figure 1A to Fig. 1 F, it shows the schematic diagram of the manufacture method of known projection (bumping).Shown in Figure 1A, semiconductor substrate 10 is provided, it includes the integrated circuit package (not showing at this) that preparation is finished, and an aluminium pad (bonding pad) 12 and the protruding pad of metal (bumping pad) the 11st are arranged on this surface, semiconductor-based ends 10.Afterwards; please refer to Figure 1B; with a protective layer (passivation) the 14th, cover all integrated circuit packages on this surface, semiconductor-based ends 10, and one first opening 16 be the definition be formed on the protective layer 14 so that the surface portion of the protruding pad 11 of this metal exposes to the open air out.Secondly, shown in Fig. 1 C, on surface, the semiconductor-based ends 10, form a barrier layer (barrier layer) 18 and one metal level 20 in regular turn.Then, shown in Fig. 1 D, 10 surfaces are gone up and are formed a thick film photoresist layer 22 in the semiconductor-based ends, and it includes one second opening 24 is to be used for defining the pattern of metal bump location to be coated with little shadow mode.
Then, shown in Fig. 1 E, in second opening 24, electroplate a metal coupling 26 to form a conducting metal projection.Afterwards, shown in Fig. 1 F, after again thick film photoresist layer 22 being divested, in regular turn the metal level 20 beyond metal coupling 26 zones is removed with etching method with barrier layer 18, till exposing protective layer 14.At last, heating of metal projection 26 makes it form the spherical metal projection again.
Yet, on actual processing procedure experience, when in making the metal coupling process, facing the step of etch barrier, shown in Fig. 1 F, its etching solution tends to barrier layer is caused lateral erosion (side etch) 28, and also might be to exposed circuit structure such as aluminium pad (Al pad), fuse (fuse) etc. damages, and then influences component characteristic.Therefore, demand the road seeking to improve at the problems referred to above urgently, and make that production capacity and yield are promoted.
Summary of the invention
Because the problems referred to above, the object of the present invention is to provide a kind of etching solution and utilize the conductive projection manufacture method of this etching solution selective removal barrier layer, its alternative following barrier layer (barrier layer) of conductive projection (conductive bumping) of removing, and not injuring conductive projection and circuit structure such as aluminium pad (Al pad) to exposing, fuse (fuse) etc. damages.
For reaching above-mentioned purpose, the present invention provides a kind of etching solution, it is the composition liquid of hydrogen peroxide (Hydrogenperoxide), sulfonic group salicylic acid (Sulfosalicylic acid), potassium sulfate (Potassiumsulfate), BTA (Benzotriazole) and water (Water for makeup), this etching solution is controlled at suitable temperature and pH-value are alternative to be removed barrier layer and do not injure conductive projection, and uses this and invent manufacture method in conductive projection.
At first, provide one to prepare the semiconductor-based end of finishing integrated circuit package, and have a metal level (metal layer) and protruding pad (bonding pad) on it.Next, directly form a barrier layer in this metal level (metal layer) and protruding pad (bonding pad) surface.Subsequently, form a projection at the bottom of conducting shell (conductive under bump metallurgy layer) on this barrier layer.Follow-up, the mode with the coating exposure on conducting shell at the bottom of this projection defines the pattern of this projection to form a hole (hole); Afterwards, form a conductive bump layer again and insert this hole, and remove this residual coating thing.Conducting shell at the bottom of this projection of etching is removed this barrier layer with the etching solution of specific composition again.At last, heating this conductive projection makes it form a spherical conductive projection.
Description of drawings
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:
Illustrate:
Figure 1A-Fig. 1 F is that a known semiconductor conductive projection is made profile.
Fig. 2 A-Fig. 2 D makes profile for the semiconductor conductive projection in the preferred embodiment of the present invention.
Symbol description:
The semiconductor-based end-10; Aluminium pad-12; Metal protruding pad-11; Protective layer-14; First opening-16; Barrier layer-18; Metal level-20; Second opening-24; Photoresist layer-22; Metal coupling-26; Lateral erosion-28.
The semiconductor-based end-121; Metal level-119; Protruding pad-123; Hole-133; Barrier layer-127; Conducting shell at the bottom of the projection-129; Photoresist layer-131; Conductive projection-135.
Embodiment
For a conductive projection processing procedure, it has different structure utilizations in industry.Recommend an embodiment in spy herein and be applied in the conductive projection processing procedure so that method of the present invention to be described.
At first, please refer to Fig. 2 A, provide one to prepare the semiconductor-based end 121 of finishing the integrated circuit package (not shown), and has a metal level 119 on it, its material for example a metallic aluminium pad (Al pad) with usefulness as follow-up conductive projection processing procedure, and a protruding pad 123 (bonding pad), its material for example the protruding pad of a metallic aluminium (Al pad) with usefulness as follow-up wire bonding or test (testing).
Follow-up, please refer to Fig. 2 B, with sputtering method (sputting), vapour deposition method (evaporation) or chemical vapour deposition technique (CVD) compliance deposit a barrier layer 127 (barrier layer) in this metal level that exposes to the open air 119 and protruding pad 123 surfaces with as being used for the diffusion that barrier metal caused in the subsequent thermal processing procedure, the barrier layer material is a tungsten titanium coating (TiW) for example; And, before forming barrier layer 127, preferably handle to increase barrier layer 127 and 121 the tack in the semiconductor-based end prior to the surface cleaning of surface execution one wet type of the semiconductor-based ends 121 or dry type.Subsequently, conducting shell 129 (conductive under bump metallurgy layer) was on this barrier layer 127 at the bottom of compliance deposited a projection, it helps and is follow-up with the tack between the metal coupling that forms, and it for example is a metallic copper (Cu) for conductive material.Follow-up, on conducting shell 129 at the bottom of this projection, form a cover curtain layer 131 (masklayer) with coating method, material is a photoresistance or high-molecular photosensitive layer for example, again with the definition of the aligning Exposure mode of little shadow technology follow-up with conductive projection (conductive bump) pattern that forms on this semiconductor-based end 121 and form a hole 133 (hole), with plating template (platingtemplate) as follow-up formation conductive projection.At last, form 135 layers of conductive projections with plating mode and insert this hole 133, these conductive projection 135 materials are tin-based materials, for example tin lead (Sn-based, SnPb), tin (Sn), plumbous (Pb), silver (Ag) or copper (Cu) or contain the brazing metal of the alloy of above metal.
Next, please refer to Fig. 2 C, by implementing a wet type or dry-etching processing procedure to remove these conductive projection 135 patterns cover curtain layer 131 in addition.After cover curtain layer is removed, serve as the cover curtain with established conductive projection 135 again, remove that this wet etchant is an ammonium hydroxide (Ammonium Hydroxide) for example with conducting shell 129 at the bottom of waiting tropism's wet etching (isotropic etching) mode with this projection that exposes to the open air.Afterwards, use first-class tropism's wet etching mode again this barrier layer that exposes to the open air 127 is removed, and expose protruding pad 123 (Al pad) and fuse (fuse) district that does not make conductive projection 135.Because barrier layer etching solution of the present invention can not cause lateral erosion to barrier layer 127; also can be to exposed circuit structure such as aluminium pad (Al pad); fuse (fuse) etc. damages, so must more therefore not save one processing procedure in aluminium pad or the molten online layer protective layer that adds.This etching solution is by specific forming, a chemical mixture (chemical mixture) for example, and its content comprises:
1. hydrogen peroxide (Hydrogen peroxide): 10-20%
2. sulfonic group salicylic acid (Sulfosalicylic acid): 2-30 g/liter
3. potassium sulfate (Potassium sulfate): 25-200 g/liter
4. BTA (Benzotriazole): 1-10 g/liter
5. water (Water for makeup)
6. temperature: 30-70 ℃
7. pH-value＜7
At last, please refer to Fig. 2 D, in for example thermal annealing mode conductive projection 135 is heated, make material production fusing (fluxed), backflow (reflowed) and the clean effect of welding portion, this conductive projection 135 forms a spherical conductive projection then, forms the preferable characteristic that is electrically connected in order to follow-up with the external circuitry plate.
The fill a prescription scope of its application of the etching solution of the invention described above comprises the plumbous even unleaded conductive projection processing procedure of the tin that is used in different proportion.This Ti-W etchant only can promptly not dissolve the Ti-W compound, and can not corrode for example aluminium, chromium, copper or plumber's solder, also can not cause lateral erosion to barrier layer, the more important thing is, can be to exposed circuit structure such as aluminium pad (Al pad), fuse (fuse) etc. damages, and can guarantee that component characteristic is unaffected.
Claims (18)
1. etching solution, it is alternative removes barrier layer and does not injure conductive projection, and it is formed with every liters of water is benchmark, comprising:
The hydrogen peroxide of 1000 milliliters of 10-20% volume ratios;
2-30 g sulfonic group salicylic acid;
25-200 g potassium sulfate; And
1-10 g BTA.
2. etching solution according to claim 1, wherein the temperature of this etching solution is 30-70 ℃.
3. etching solution according to claim 1, wherein the pH-value of this etching solution is less than 7.
4. etching solution according to claim 1, wherein this barrier layer is to comprise a tungsten titanium layer.
5. etching solution according to claim 1, wherein this conductive projection is the brazing metal that comprises a tin, lead, silver or copper or contain the alloy of above metal.
6. the conductive projection manufacture method of a selective removal barrier layer is applicable to that one contains the semiconductor-based end of integrated circuit, is formed with a metal level and a protruding pad on it, comprises the following steps:
Compliance forms a barrier layer on this metal level and protruding pad;
Electroplate and form a conductive projection on this barrier layer; And
Etching is removed barrier layer beyond this conductive projection to expose this metal level and protruding pad, the used etching solution of this step wherein, and it is formed with every liters of water is benchmark, comprising:
The hydrogen peroxide of 1000 milliliters of 10-20% volume ratios;
2-30 g sulfonic group salicylic acid;
25-200 g potassium sulfate; And
1-10 g BTA.
7. the conductive projection manufacture method of selective removal barrier layer according to claim 6, wherein this metal level is to comprise an aluminum metal layer.
8. the conductive projection manufacture method of selective removal barrier layer according to claim 6, wherein this barrier layer is to comprise a tungsten titanium layer.
9. the conductive projection manufacture method of selective removal barrier layer according to claim 6, wherein form more comprise before the conductive projection form a projection at the bottom of conducting shell on this barrier layer.
10. the conductive projection manufacture method of selective removal barrier layer according to claim 9, wherein conducting shell is to comprise a copper metal layer at the bottom of this projection.
11. the conductive projection manufacture method of selective removal barrier layer according to claim 6, wherein this conductive projection is the brazing metal that comprises a tin, lead, silver or copper or contain the alloy of above metal.
12. the conductive projection manufacture method of a selective removal barrier layer is applicable to that one contains the semiconductor-based end of integrated circuit, is formed with a metal level and a protruding pad on it, comprises the following steps:
Form a barrier layer on this metal level and protruding pad;
Form a conductive projection on this barrier layer; And
Remove this conductive projection barrier layer in addition, to expose this metal level and protruding pad; The used etching solution of this step wherein, it is formed with every liters of water is benchmark, comprising:
The hydrogen peroxide of 1000 milliliters of 10-20% volume ratios;
2-30 g sulfonic group salicylic acid;
25-200 g potassium sulfate; And
1-10 g BTA.
13. the conductive projection manufacture method of selective removal barrier layer according to claim 12, wherein this metal level is to comprise an aluminum metal layer.
14. the conductive projection manufacture method of selective removal barrier layer according to claim 12, wherein this protruding pad is to comprise an aluminum metal layer.
15. the conductive projection manufacture method of selective removal barrier layer according to claim 12, wherein this barrier layer is to comprise a tungsten titanium layer.
16. the conductive projection manufacture method of selective removal barrier layer according to claim 12, wherein form more comprise before the conductive projection form a projection at the bottom of conducting shell on this barrier layer.
17. the conductive projection manufacture method of selective removal barrier layer according to claim 16, wherein conducting shell is to comprise a copper metal layer at the bottom of this projection.
18. the conductive projection manufacture method of selective removal barrier layer according to claim 12, wherein this conductive projection is the brazing metal that comprises a tin, lead, silver or copper or contain the alloy of above metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101214870A CN100421216C (en) | 2003-12-18 | 2003-12-18 | Etching solution and method for manufacturing conducting lug by selectively removing barrier layer with the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101214870A CN100421216C (en) | 2003-12-18 | 2003-12-18 | Etching solution and method for manufacturing conducting lug by selectively removing barrier layer with the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1630038A true CN1630038A (en) | 2005-06-22 |
| CN100421216C CN100421216C (en) | 2008-09-24 |
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| CNB2003101214870A Expired - Lifetime CN100421216C (en) | 2003-12-18 | 2003-12-18 | Etching solution and method for manufacturing conducting lug by selectively removing barrier layer with the same |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101211798B (en) * | 2006-12-29 | 2010-12-08 | 台湾积体电路制造股份有限公司 | Solder tappet structure and its making method |
| CN110010576A (en) * | 2018-01-05 | 2019-07-12 | 颀邦科技股份有限公司 | Have the semiconductor device and its manufacturing method of projection cube structure |
| CN110310939A (en) * | 2018-03-27 | 2019-10-08 | 矽品精密工业股份有限公司 | Board structure and its preparation method and conductive bump |
| CN117497483A (en) * | 2023-12-27 | 2024-02-02 | 日月新半导体(昆山)有限公司 | Integrated circuit manufacturing method and integrated circuit device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5462638A (en) * | 1994-06-15 | 1995-10-31 | International Business Machines Corporation | Selective etching of TiW for C4 fabrication |
| US6015505A (en) * | 1997-10-30 | 2000-01-18 | International Business Machines Corporation | Process improvements for titanium-tungsten etching in the presence of electroplated C4's |
| JP2003293174A (en) * | 2002-04-05 | 2003-10-15 | Nippon Paint Co Ltd | Acid etching solution for magnesium metal and/or alloy and surface treatment method |
-
2003
- 2003-12-18 CN CNB2003101214870A patent/CN100421216C/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101211798B (en) * | 2006-12-29 | 2010-12-08 | 台湾积体电路制造股份有限公司 | Solder tappet structure and its making method |
| CN110010576A (en) * | 2018-01-05 | 2019-07-12 | 颀邦科技股份有限公司 | Have the semiconductor device and its manufacturing method of projection cube structure |
| CN110310939A (en) * | 2018-03-27 | 2019-10-08 | 矽品精密工业股份有限公司 | Board structure and its preparation method and conductive bump |
| CN110310939B (en) * | 2018-03-27 | 2021-04-30 | 矽品精密工业股份有限公司 | Substrate structure and manufacturing method thereof and conductive bump |
| CN117497483A (en) * | 2023-12-27 | 2024-02-02 | 日月新半导体(昆山)有限公司 | Integrated circuit manufacturing method and integrated circuit device |
| CN117497483B (en) * | 2023-12-27 | 2024-04-12 | 日月新半导体(昆山)有限公司 | Integrated circuit manufacturing method and integrated circuit device |
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| CN100421216C (en) | 2008-09-24 |
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