CN1624809A - Lithium silicon compound radio-frequency wall processing technology capable of used in nuclear fusion experimental device - Google Patents

Lithium silicon compound radio-frequency wall processing technology capable of used in nuclear fusion experimental device Download PDF

Info

Publication number
CN1624809A
CN1624809A CNA2004100650152A CN200410065015A CN1624809A CN 1624809 A CN1624809 A CN 1624809A CN A2004100650152 A CNA2004100650152 A CN A2004100650152A CN 200410065015 A CN200410065015 A CN 200410065015A CN 1624809 A CN1624809 A CN 1624809A
Authority
CN
China
Prior art keywords
wall
lithium
frequency
lithium silicon
nuclear fusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2004100650152A
Other languages
Chinese (zh)
Other versions
CN1279545C (en
Inventor
陈俊凌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Plasma Physics of CAS
Original Assignee
Institute of Plasma Physics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Plasma Physics of CAS filed Critical Institute of Plasma Physics of CAS
Priority to CNB2004100650152A priority Critical patent/CN1279545C/en
Publication of CN1624809A publication Critical patent/CN1624809A/en
Application granted granted Critical
Publication of CN1279545C publication Critical patent/CN1279545C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00Energy generation of nuclear origin
    • Y02E30/10Nuclear fusion reactors

Landscapes

  • Silicon Compounds (AREA)
  • Plasma Technology (AREA)

Abstract

The invention discloses a lithium silicon composite radio frequency wall process technology which can be used in the nuclear fusion experimental apparatus. The feature of the invention is that according to the coat component of the wall and the structure design theory, the PACVD method is adopted. The lithium steam is entered to realize normal position radio frequency lithium silicon composite wall process in the HT-7 superconducting tokamak radio frequency silication process. Not only has the coat high performance, but also can improve the lithiation using life from several stirring baking to hundreds stirring baking. So this can create good wall condition for the high efficiency, long pulse plasma physical experiment. Meanwhile, the wall process can be did at the condition that longitudinal field coil is not demagnetization. It is a wall process mode which is more suitable for the ITER and future fusion reactor.

Description

A kind of lithium silicon compound radio-frequency wall processing technology that can be used in the nuclear fusion experimental device
Technical field
The present invention relates to a kind of lithium silicon compound radio-frequency wall processing technology that can be used in the nuclear fusion experimental device.
Background technology
Between the character of the process that takes place on the magnetic confinement nuclear fusion plasma body wall, edge plasma and main plasma character, there is strong non-linear correlation, they are changing energy and PARTICLE TRANSPORT FROM in the plasma mechanism by complexity, plasma confinement and discharge performance, the structure that edge plasma is suitable are that acquisition high-performance thermonuclear fusion plasma is necessary.The surface state of tokamak device first wall plays crucial effects to the impurity level in the control plasma, fuel particle recycling and raising plasma restraint performance.Can be improved by discharge cleaning and the film that deposits suitable chemical composition and physical arrangement interact this nearly surf zone of (PSI) of plasma and wall takes place, thereby make the people can ACTIVE CONTROL PSI process.
Controlled thermonuclear fusion must just can be achieved under ultra-high vacuum environment, impurity wherein not only causes the energy of plasma radiation loss, and fusion fuel is diluted, make that desirable nuclear fusion reaction is difficult to take place, all can to control the interior circulation and the recyclability of impurity closely-related with us in each stepping exhibition that controlled thermonuclear fusion research institute obtains.The original position boronation of magnetic trapped fusion apparatus first wall and silication wall are handled and are made the Q factor of plasma be greatly improved now, and TEXTOR device first wall adopted the auxiliary glow discharge technique RF-GDC (0.8He+0.2CH of radio frequency plasma in 1987 4) realized the original position carbonization having suppressed beavy metal impurity fully, but the carbon wall still exists higher carbon impurity level and hydrogen recycle in experimentation.The TEXTOR device had adopted RF-GDC (0.8He+0.1B in 1988 2H 6+ 0.1CH 4) original position boronation technology, outside removing heavy metals impurity is suppressed fully, also greatly reduce carbon in the device, oxygen impurities level and hydrogen recycle, plasma properties is greatly improved.The JET device had carried out the beryllium experiment in 1989, owing to beryllium powder severe toxicity fails to be used widely.TEXTOR devices in 1992 have carried out the original position silication experiment of first wall, the carbon lower, oxygen impurities level and hydrogen recycle have been obtained than the original position boronation, and utilize silicon (Si) to set up the edge plasma radiating layer, further reduced the energy of plasma radiation loss, especially to high temperature, high-density plasma.
In fusion facility original position wall is handled, because the atomic number minimum of lithium, and has the highest chemical reactivity, it compares the recycle and the oxygen impurities content that can not only further reduce in the device with in-situ boron, silication, and the carbon impurity level in the restraining device more significantly, improve the restraint performance of plasma, so the original position lithiumation should develop into best from now on wall processing means.TFTR device in 1992 adopts lithium (Li) bullet injection Tokamak Plasma that first wall is carried out the experiment of original position lithiumation and has obtained great success, carbon, oxygen impurities level and the hydrogen recycle of plasma center and peripheral have significantly been reduced, realized super discharge (supershot) restriction mode, obtained best plasma properties, the highest fusion three product n iT iτ E, show that lithiumation is to reducing carbon, oxygen impurities and (locking mode is very effective under the discharge of I>2.2MA) at high electric current.Owing to reason such as the fusing point of lithium material itself and hardness is lower, its material itself is difficult to form fine and close quality coating, the present high-effect level that all can only keep several big guns of original position lithiumation of all devices in the world can not satisfy the needs of fusion facility high power, long pulse Physical Experiment far away.In advanced wall tupe of development fusion facility and technical study, how to prolong a great problem that becomes plasma and wall interaction field serviceable life of high-effect lithiumation wall.
Handle with respect to the aura wall:, be equivalent to electrodless discharge because radio frequency plasma is the method that adopts rf wave to inject; But the rf wave pulse is injected simultaneously, and dutycycle can be regulated; Radio frequency plasma can be operated in more under the hyperbar; The deposition precursor can obtain the film forming energy of ionization more fully and Geng Gao etc. in this external radio frequency plasma.Because above several respects, the in-situ radio-frequency wall is handled and is more suitable in complicated shape, the even film forming of large-area high-quality.
Summary of the invention
The objective of the invention is to solve high-effect, the low life problems that the lithiumation wall is handled, use plasma auxiliary chemical vapor deposition PACVD method, make full use of the relative long-life of the high-effect and silication of lithiumation, in HT-7 superconducting Tokamak first wall in-situ radio-frequency silicatization process, feed lithium vapor, utilize radio frequency plasma Li and SiH 4The disassociation and ionization, under effect of electric field with Li +, Si +, and Si xH y +The ion disperse is deposited on the first wall in the face of plasma equably.The feeding amount of lithium vapor and with the proportioning of feeding thing such as silane be fully controlled, realize this lithium silicon complex function coating (α-C:H/Li-Si) according to coating composition and structural design theory, its performance approaches the lithiumation wall, but more than the serviceable life sustainable hundreds of big gun.
A kind of lithium silicon compound radio-frequency wall processing technology that can be used in the nuclear fusion experimental device, it is characterized in that: (1), use pulse ion cyclotron wave injection earlier excite the wall of helium plasma discharge carrying out nuclear fusion experimental device to clean, after cleaning certain hour, excite at more high-power ion cyclotron wave again to feed silane in the helium plasma and carry out the radio frequency silicidation; (2) feed lithium steam again in the radio frequency silicatization process, carry out lithium silicon composite and handle.Before the radio frequency silicidation, cleaned 30-45 minute with 5kW pulse ion cyclotron wave helium plasma discharge carrying out wall.The wall of nuclear fusion experimental device uses 1/2 section ion involution antenna, ion involution wave power in radio frequency silication and the lithium silicon recombination process is 15-20kW, frequency is 30MHz, connects a second and disconnect the pulse radiation frequency ripple injection in a second to excite the generation helium plasma.The silane that feeds in the rf wave and the proportioning of helium are: 10% and 90%, and helium plasma pressure is 0.2-0.4Pa.
At wall cleaning process lithium steam is to be that 99.9% 2~3 gram lithiums are under the high-purity Ar gas shiled of flowing with purity; put in the outer stainless steel crucible of device; be heated to 400-500 ℃ and make the lithium evaporation, lithium steam is tangentially sent in the radio frequency plasma by the ultrasonic molecular beam system through the vacuum connection tube road.
The radio frequency silication wall processing time is 10~20 minutes, and the lithium silicon composite processing time is 80-120 minute; Lithium silicon composite adopted ion involution helium plasma discharge cleaning 20-30 minute, the wall condition that at this moment can be optimized after handling again.
Technical solution of the present invention is characterised in that before lithium silicon compound radio-frequency wall is handled, after adopting the sufficient wall of 5kW ion cyclotron wave helium plasma discharge carrying out to clean, use 1/2 section ion involution wave antenna of HT-7 device, the power of ion cyclotron wave is 15-20kW, frequency is 30MHz, the pulse radiation frequency ripple of connecting for one second and disconnecting a second inject excite produce helium plasma (ion cyclotron wave because of its wave frequency section in the scope of rf wave, rf wave in this application just is meant ion cyclotron wave.Wave producer is all arranged for ripple, and the ripple that wave producer produces by transmission line, is coupled in the fusion facility by antenna again, and the low density gas in the device is produced plasma by ripple disruptive discharge, mainly is that helium then is helium plasma as low density gas.The continuous wave of wave producer generation in this application can be injected in the device by its continuous 1 second kind by switch, turn-offs for 1 second again, and then injects and turn-off such impulse form again).And use accurate mass rate controller in plasma, to feed silane and helium, and the silane of feeding and the proportioning of helium are: 10% and 90%, and helium plasma pressure is 0.2-0.4Pa.Formerly feed silane and carry out the radio frequency silicidation after (be exactly that rf wave passes through to produce in the plasma process in the antenna injection device, only feed silane and helium, such wall tupe is called the radio frequency silication) 10-20 minute, feed lithium steam again; Lithium is evaporated ceramic crucible place outside the device, the feeding amount of lithium steam also need be regulated by accurate mass rate controller, has the vacuum connection tube road tangentially to send in the radio frequency plasma by the ultrasonic molecular beam system; After 80-120 minute lithium silicon composite processing, also to adopt the discharge of ion involution helium plasma to clean again, this cleaning is exactly in radio frequency helium plasma discharge process, the helium ion is constantly on the wall of percussion device, and displace unnecessary H in the lithium silicon composite coating, thereby play the effect of cleaning, cleaned the wall condition that at this moment can be optimized 20-30 minute.Lithium silicon composite after PROCESS FOR TREATMENT of the present invention, can keep more than the hundreds of big gun its serviceable life, thereby can be the wall condition of high power, long pulse plasma physics experiment creation optimization.In addition, this wall is handled and can be carried out under the situation that longitudinal field coil does not demagnetize, and is to be more suitable in a kind of wall tupe of international thermonuclear fusion experimental reactor ITER and following fusion reactor from now on.
Description of drawings
Fig. 1 is that the HT-7 lithium silicon compound radio-frequency wall is handled the experimental establishment synoptic diagram.
Embodiment
Before and after handling, lithium silicon radio frequency composite needs to clean through sufficient ion involution wall, and the one, wall is removed impurity adsorbed on the wall before handling as much as possible; The 2nd, wall is handled contained most of hydrogen in the decoating of back.
Because the chemical reactivity of lithium is very strong, at room temperature promptly can with residual gas CO, the CO in the ultrahigh vacuum tokamak device 2, H 2, O 2, CH 4And H 2Chemical reaction takes place in the metal oxides on O and the wall etc., before therefore radio frequency lithium silicon composite is handled in position, needs that first wall is carried out abundant ion involution wall and cleans, to remove these impurity etc. as much as possible; After wall cleaning fully, need to introduce 10% silane and 90% helium, carry out the radio frequency silication after 10-20 minute, lithium vapor adopts ultrasonic molecular beam to send in the tokamak device by tangential (changing radially original) in tokamak High-Field side, and this method helps even film forming.
Lithium evaporation changed in the vacuum tank outside device carry out, lithium quantity of steam in the feeder is regulated and controlled to vacuum tank by accurate mass rate controller; Lithium vapor adopts ultrasonic molecular beam to inject in the tokamak device by tangential (changing radially original) in tokamak High-Field side simultaneously, can guarantee that like this lithium steam can be transported to farther place in vacuum installation, in radio frequency plasma, can obtain sufficient ionization in order to it, thereby help even film forming.At 1/2 section ion involution wave antenna of HT-7 superconducting tokamak device High-Field side, its layout in device as shown in Figure 1, this antenna structure the utmost point to the film forming that vertically all can obtain uniformity.
1/2 section ion involution wave antenna is exactly that the ion involution antenna has accounted for half of small circumference on the Xiao Yuan cross section of tokamak device.
With purity is that 99.9% 2-3 gram lithium is under the high-purity Ar gas shiled of flowing, put in the outer stainless steel crucible of device, the outer vacuum tank that is connected with device of crucible is evacuated, simultaneously HT-7 device first wall is baked to 60 ℃, main pole is baked to 150 ℃ to graphite limiter; Limiter is a graphite in the face of the material of plasma part, and its position as shown in Figure 1.First wall to the HT-7 device carries out ion involution helium plasma discharge wall cleaning 30 minutes again, how reduce adsorbed C, O impurity and the H concentration in wall surface to greatest extent (operates and cleans, be exactly by the discharge of radio frequency helium plasma, on the helium ion bombardment auto levelizer wall, impurity adsorbed on the first wall is driven out of the plasma from wall, and be extracted into outside the device, thereby play the effect of cleaning impurity) by the unit of being bled; Again that the lithium crucible is outer heater strip energising is heated to 400-500 ℃ makes the lithium evaporation; In the heating of lithium crucible, use is installed in 1/2 section ion involution antenna in the HT-7 device wall, rf wave power is 18kW, and frequency is 30MHz, and kind connection in a second also disconnects a second, the feeding ratio of silane and helium is 10% and 90%, plasma pressure is 0.4Pa, formerly only feeds silane and carries out silication after 20 minutes, controls the feeding amount of lithium vapor again by accurate mass rate controller, in the compound coating procedure of lithium silicon, Li and SiH 4By the radio frequency helium plasma excite, disassociation and ionization, under effect of electric field with Li +, Si +, and Si xH y +The ion disperse is deposited on the first wall in the face of plasma equably.The feeding amount of lithium vapor and with the proportioning of feeding thing such as silane be fully controlled, this lithium silicon complex function coating α-C:H/Li-Si according to coating composition and structural design theory realization, after handling through 80-120 minute lithium silicon composite, the last ion cyclotron wave helium plasma discharge wall of 5kW that adopts again cleaned 20-30 minute, so that remove unnecessary H in the lithium silicon composite coating, reduce the recycle of H, the wall condition that at this moment can obtain to optimize.
After lithium silicon composite was handled, the impurity level of HT-7 superconducting Tokamak vacuum plant reduced significantly, H wherein 2O and CH 4Than reducing 40-50% respectively before the wall processing, CO reduces by 150%, and CO 2Reduced more than 6 times, the level of its impurity level after far below silication is with being on close level after the HT-7 device original position lithiumation.After a lithium silicon composite is handled, the control easily because reduction of impurity level and H recycle, plasma discharge become is from big gun 48050-48400#, can continue to have observed significant lithiumation effect on the HT-7 device, its life-span reaches more than 350 big guns always.

Claims (6)

1, a kind of lithium silicon compound radio-frequency wall processing technology that can be used in the nuclear fusion experimental device, it is characterized in that: (1), use pulse ion cyclotron wave injection earlier excite the wall of helium plasma discharge carrying out nuclear fusion experimental device to clean, after cleaning certain hour, excite at more high-power ion cyclotron wave again to feed silane in the helium plasma and carry out the radio frequency silicidation; (2) feed lithium steam again in the radio frequency silicatization process, carry out lithium silicon composite and handle.
2, a kind of lithium silicon compound radio-frequency wall processing technology that can be used in the nuclear fusion experimental device according to claim 1 is characterized in that before the radio frequency silicidation, cleans 30-45 minute with 5kW pulse ion cyclotron wave helium plasma discharge carrying out wall.
3, a kind of lithium silicon compound radio-frequency wall processing technology that can be used in the nuclear fusion experimental device according to claim 1, the wall that it is characterized in that nuclear fusion experimental device uses 1/2 section ion involution antenna, ion involution wave power in radio frequency silication and the lithium silicon recombination process is 15-20kW, frequency is 30MHz, connects a second and disconnect the pulse radiation frequency ripple injection in a second to excite the generation helium plasma.
4, a kind of lithium silicon compound radio-frequency wall processing technology that can be used in the nuclear fusion experimental device according to claim 1 is characterized in that the silane that feeds and the proportioning of helium are: 10% and 90%, and helium plasma pressure is 0.2-0.4Pa.
5, a kind of lithium silicon compound radio-frequency wall processing technology that can be used in the nuclear fusion experimental device according to claim 1; it is characterized in that at wall cleaning process lithium steam it being to be that 99.9% 2~3 gram lithiums are under the high-purity Ar gas shiled of flowing with purity; put in the outer stainless steel crucible of device; be heated to 400-500 ℃ and make the lithium evaporation, lithium steam is tangentially sent in the radio frequency plasma by the ultrasonic molecular beam system through the vacuum connection tube road.
6, a kind of lithium silicon compound radio-frequency wall processing technology that can be used in the nuclear fusion experimental device according to claim 1 is characterized in that the radio frequency silication wall processing time is 10~20 minutes, and the lithium silicon composite processing time is 80-120 minute; Lithium silicon composite adopted ion involution helium plasma discharge cleaning 20-30 minute, the wall condition that at this moment can be optimized after handling again.
CNB2004100650152A 2004-10-16 2004-10-16 Lithium silicon compound radio-frequency wall processing technology capable of used in nuclear fusion experimental device Expired - Fee Related CN1279545C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB2004100650152A CN1279545C (en) 2004-10-16 2004-10-16 Lithium silicon compound radio-frequency wall processing technology capable of used in nuclear fusion experimental device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2004100650152A CN1279545C (en) 2004-10-16 2004-10-16 Lithium silicon compound radio-frequency wall processing technology capable of used in nuclear fusion experimental device

Publications (2)

Publication Number Publication Date
CN1624809A true CN1624809A (en) 2005-06-08
CN1279545C CN1279545C (en) 2006-10-11

Family

ID=34764614

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100650152A Expired - Fee Related CN1279545C (en) 2004-10-16 2004-10-16 Lithium silicon compound radio-frequency wall processing technology capable of used in nuclear fusion experimental device

Country Status (1)

Country Link
CN (1) CN1279545C (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102157207A (en) * 2011-01-21 2011-08-17 北京航空航天大学 Megasonic Tokamak dust removal device and cleaning method
CN102653856A (en) * 2012-04-16 2012-09-05 中国科学院等离子体物理研究所 Method for improving first wall fuel recycling of full-superconducting tokomak by using lithium metal coating layer
CN103903931A (en) * 2012-12-26 2014-07-02 核工业西南物理研究院 Embedded glow discharge electrode
CN113913778A (en) * 2021-09-08 2022-01-11 核工业西南物理研究院 Online surface coating silicification wall processing method for fusion device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102157207A (en) * 2011-01-21 2011-08-17 北京航空航天大学 Megasonic Tokamak dust removal device and cleaning method
CN102653856A (en) * 2012-04-16 2012-09-05 中国科学院等离子体物理研究所 Method for improving first wall fuel recycling of full-superconducting tokomak by using lithium metal coating layer
CN102653856B (en) * 2012-04-16 2013-12-25 中国科学院等离子体物理研究所 Method for improving first wall fuel recycling of full-superconducting tokomak by using lithium metal coating layer
CN103903931A (en) * 2012-12-26 2014-07-02 核工业西南物理研究院 Embedded glow discharge electrode
CN103903931B (en) * 2012-12-26 2016-12-07 核工业西南物理研究院 Embedded glow-discharge electrode
CN113913778A (en) * 2021-09-08 2022-01-11 核工业西南物理研究院 Online surface coating silicification wall processing method for fusion device
CN113913778B (en) * 2021-09-08 2023-09-08 核工业西南物理研究院 Online surface coating siliconized wall treatment method for fusion device

Also Published As

Publication number Publication date
CN1279545C (en) 2006-10-11

Similar Documents

Publication Publication Date Title
Zuo et al. Comparison of various wall conditionings on the reduction of H content and particle recycling in EAST
AU2024202019A1 (en) Thermophotovoltaic electrical power generator
CN88101465A (en) A kind of remove be deposited in the chemical vapor deposition reactor chamber not need the method for carbon product
US5630880A (en) Method and apparatus for a large volume plasma processor that can utilize any feedstock material
TW200807738A (en) Plasma deposition apparatus and method for making solar cells
CN102260869B (en) Method for preparing tungsten coating by using cold air dynamic spraying technology
WO2021109377A1 (en) Coating equipment for preparing dlc and use thereof
CN112853482B (en) Method and equipment for preparing 100-surface diamond in situ by microwave plasma-magnetron sputtering composite vapor deposition
JP2005005280A (en) Method for passivating semiconductor substrate
CN101851747A (en) High-current metal ion source
CN109576679A (en) A kind of fuel battery double plates carbon coating continuous deposition system and its application
CN1279545C (en) Lithium silicon compound radio-frequency wall processing technology capable of used in nuclear fusion experimental device
CN102084030B (en) Process and installation for despositing films simultaneously onto both sides of a substrate
CN1059716C (en) Method for synthesizing Beta-C3N4 superhard film material using radio-freq chemical gas-phase sedimentation
CN103572195B (en) Gas recovery system and gas reduction device
CN2504276Y (en) Chemical gas phase deposition appts. for heating prepn. of film by inductively coupled plasma auxiliary tungsten filament
Xu et al. EAST Superconducting Tokamak.
Hu et al. He–ICR cleanings on full metallic walls in EAST full superconducting tokamak
CN102234764A (en) Metallization process and welding method for pyrolytic graphite
CN1045658A (en) A kind of preparation method of metallic oxide superconduction film
CN2679134Y (en) Appts. for continuous prepn. of foamed charcoal material from coal
CN102833936A (en) Atmosphere DC (direct current) arc discharge plasma generator
Hu et al. Plasma recovery after various events in HT-7 superconducting tokamak
JPWO2005054127A1 (en) Induction fullerene manufacturing apparatus and manufacturing method
CN1278018A (en) Ion cycloron boronization process used for first wall surface of superconductive magnetic restraining fusion device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee