CN1622410A - Matrix addressing vertical cavity surface emitting laser array device - Google Patents
Matrix addressing vertical cavity surface emitting laser array device Download PDFInfo
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- CN1622410A CN1622410A CN 200310119646 CN200310119646A CN1622410A CN 1622410 A CN1622410 A CN 1622410A CN 200310119646 CN200310119646 CN 200310119646 CN 200310119646 A CN200310119646 A CN 200310119646A CN 1622410 A CN1622410 A CN 1622410A
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Abstract
The matrix addressed vertical cavity emitting laser array device includes mXn vertical cavity emitting laser units. Each of the vertical cavity emitting laser units includes three mesas, including bottom reflector mesa, laser cavity mesan and top reflector mesa, of successively decrementing sizes as well as p electrode and n electrode. The laser cavity mesan is made on the bottom reflector mesa, and the top reflector mesan is made on the laser cavity mesa. The p electrode is made on the p-type re-doped conducting layer and around the top reflector mesa, and the p electrodes of each row of the vertical cavity emitting laser units are connected together. The n electrode is made on the n-type re-doped conducting layer and around the laser cavity mesa, and the n electrodes of each line of the vertical cavity emitting laser units are connected together.
Description
Technical field:
The present invention relates to a kind of integrated opto-electronics device, particularly a kind of vertical cavity surface emitting laser arrays device of novel matrix addressing.
Background technology:
The directional light technology of two-dimensional array has a wide range of applications.When handling two-dimensional image information, clock signal needn't be transformed into, processing speed can be improved with two-dimentional collimated light beam; Can develop the ultra-wideband-light fiber communication; Can realize the light interconnection of very lagre scale integrated circuit (VLSIC); Might become key technology and device in following computer parallel processing and the space optics.Edge-emitting laser (edge-emitting laser that comprises FP, DFB type) can't be realized single chip integrated two-dimensional array, and only upwards launching perpendicular to substrate of surface-emitting laser might realize single chip integrated two-dimensional array.
Surface-emitting laser has three kinds of basic structures, and first kind is the process structure that utilizes existing edge-emitting laser, and the speculum that adopts 45 to tilt changes to vertical outgoing with light direction.Second kind also is the process structure that utilizes existing edge-emitting laser, utilizes higher order gratings will couple light to vertical output.The third then is to utilize the vertical cavity structure, and the covering of active area both sides adopts the minute surface of high reflectance to make the light Vertical Launch.First kind of structural manufacturing process made difficulty, and second kind of structure makes efficient very low owing to the wide part of emission enters substrate.The third structure has a series of advantage: realize low threshold value, high differential quantum efficency easily; Beam divergence angle is little, and hot spot is sub-circular, easy and optical fiber and the coupling of other optics; Dynamically unimodular property and spatial emission module feature are good; Lateral dimensions is very little, the possible bigger high density monolithic integrated two-dimensional array of manufacturing dimension, and therefore, vertical cavity surface emitting laser is the most rising and the most with practical value surface-emitting laser.And semiconductor Bragg reflector (Bragg mirror) is widely used in the making of vertical cavity surface emitting laser owing to have with the compatible good advantage of active area materials.
The same with edge-emitting laser, the electric current of traditional vertical cavity surface emitting laser injects, and is vertical injection mode.This injection mode has a shortcoming, is exactly because the resistance ratio of Bragg mirror is bigger, can produce a large amount of heats when electric current flows through, cause the Bragg mirror temperature to raise, variations in refractive index causes the drift of peak reflectivity corresponding wavelength, influences the sharp characteristic of penetrating of vertical cavity surface emitting laser.In long-wavelength vertical cavity surface emitting laser, this problem is particularly serious, because the Bragg mirror number of plies of long wavelength laser is more, resistance is bigger.And electrode in the employing chamber, levels of current is injected with the source region, can effectively address this problem.Document InAs-InGaAs quantumdot VCSEL on GaAs substrates emitting at 1.3 μ m, Electronics Letter 36 (2000), and pp 1384-1385 had report.Electrode also has the another one advantage in the employing chamber, is exactly the oxide structure that Bragg mirror can adopt semi-conducting material/semi-conducting material, because the refringence of two kinds of materials of this structure is bigger, can reduce the number of plies of required Bragg mirror.
The two-dimensional array of vertical cavity surface emitting laser has two kinds of independent addressing and matrix addressings by its addressing system branch.Independent addressing array manufacturing process is simple, uniformity and rate of finished products can be very high, but because each unit is by independently lead-in wire control of needs, the array of the n * m n * m bar that need go between, and limited by chip area, number of leads can not be too many, and the number of array element also just can not be too many.Document Ultralow-threshold sapphire substrate-bonded top-emitting 850-nm VCSEL array Liu, J.J.; Riely, B.; Shen, P.H.; Das, N.; Newman, P.; Chang, W.; Simonis, G.; Photonics Technology Letters, IEEE, Volume:14 Issue:9, Sep 2002 Page (s): report is arranged on the 1234-1236.And matrix addressing adopts the mode of row address and the common control of column address, the array of the n * m n+m bar that only need go between, so unit that can integrated more more number.But the structure more complicated of matrix addressing array is not easy to realize.
One of difficult point that the matrix addressing array is made is the making of its n electrode.The isolation of existing matrix addressing array n electrode has following several method substantially: the etching deep trench isolation; Etching deep trouth and filled polyimide isolation in deep trouth; Ion injects isolates.Epitaxial loayer generally all is to grow on semi-insulating substrate.Begin recently bonding techniques to occur utilizing, element manufacturing on dielectric substrate.Document Fabrication of 12 * 12 matrix-addressed 780nm oxide-confinedVCSEL arrays Nakayama, H.; Nakmaura, T.; Sakurai, J.; Ueki, N.; Otoma, H.; Miyamoto, Y.; Yamamoto, M.; Ishii, R.; Yoshikawa, M.; Fuse, M.; BroadbandOptical Networks and Technologies:An Emerging Reality/OpticalMEMS/Smart Pixels/Organic Optics and Optoelectronics.1998IEEE/LEOS Summer Topical Meetings, 20-24 July 1998 Page (s): IV/5-IV/6 and document Fabrication and Performance of Two-DimensionalMatrix Addressable Arrays of Integrated Vertical Cavity Lasers and ResonantCavity Photodetectors, Kent M.Geib, Kent D.Choquette, Senior Member, IEEE, Darwin K.Serkland, Member, IEEE, Andrew A.Allerman, and Terry W.Hargett, IEEE Journal of Selected Topics in Quantum Electronics, Vol.8, No.4 has report on the July/August 2002.These present several manufacture methods all have a significant disadvantage, promptly to technological requirement than higher, big and reliability of technology difficulty and repeatability are all very low.
Summary of the invention:
The object of the invention is to provide a kind of vertical cavity surface emitting laser arrays device of matrix addressing, and it has makes simple, dependable performance and the low advantage of cost.
Technical scheme of the present invention is:
The vertical cavity surface emitting laser arrays device of a kind of matrix addressing of the present invention is characterized in that, comprises following basic structure:
Be total to m * n vertical cavity surface emitting laser unit;
Wherein said vertical cavity surface emitting laser unit comprises three platforms that size is successively decreased successively: bottom reflector mesa, laser cavity mesa and top reflector mesa also have p electrode and n electrode;
This bottom reflector mesa comprises:
Half dielectric substrate;
Semiconductor/semiconductor oxide Bragg mirror once, this Bragg mirror is produced on substrate top surface, for the photon of the compound generation of charge carrier provides perpendicular reflector, each row n electric current of isolated array simultaneously;
One n type heavy doping conductive layer, this n type conductive layer is produced on the lower Bragg reflector, so that the side direction injection channel of n electric current to be provided;
This laser cavity mesa comprises:
Aluminous layer under one n type mixes;
One lower limit layer that undopes, this limiting layer is produced on down on the aluminous layer, so that carrier confinement to be provided;
One active layer that undopes, this active layer is produced on the lower limit layer, and charge carrier is recombination luminescence therein;
One upper limiting layer that undopes, this upper limiting layer is produced on the active layer, so that carrier confinement to be provided;
One p type mixes and goes up aluminous layer, and aluminous layer is produced on the upper limiting layer on this, and by partial oxidation, provides lateral limitation for injecting the p electric current;
One p type heavy doping conductive layer, this conductive layer is produced on the aluminous layer, so that the side direction injection channel of p electric current to be provided;
This top reflector mesa comprises:
One semiconductor-on-insulator/conductor oxidate Bragg mirror, this Bragg mirror are produced on the p type heavy doping conductive layer, for the photon of the compound generation of charge carrier provides perpendicular reflector, and each row p electric current of isolated array simultaneously;
This p type electrode is produced on the p type heavy doping conductive layer, around the top reflector mesa ringwise, and the p electrode of every capable vertical cavity surface emitting laser unit links to each other;
This n type electrode is produced on the n type heavy doping conductive layer, around the laser cavity mesa ringwise, and the n electrode of every row vertical cavity surface emitting laser unit links to each other.
Wherein said p type heavy doping conductive layer and n type heavy doping conductive layer, in order fully to provide charge carrier to active area, its thickness is 0.75 times of effective wavelength, or 1.25 times of effective wavelengths, 1.75 times of effective wavelengths.
Aluminous layer under aluminous layer and p type mixed under wherein said n type mixed, its thickness is 0.25 times of effective wavelength, and wherein the component of aluminium is greater than 0.46 for the indium phosphide based material, is greater than 0.9 for the GaAs based material.
Wherein said p type electrode, for each each vertical cavity surface emitting laser unit of going of array, its p type electrode links to each other.
Wherein said p type electrode is titanium/platinum/gold electrode, or gold/zinc/gold electrode.
Wherein said n type electrode, for each vertical cavity surface emitting laser unit of each row of array, its n type electrode links to each other.
Wherein said n type electrode is gold/germanium/nickel electrode.
Wherein said Bragg mirror and the lower Bragg reflector gone up, its material is multilayer GaAs/gallium aluminium arsenic before the oxidation, the component of aluminium to weaken the volume compression effect of oxidation material, guarantees certain oxidation rate less than 0.99 and greater than 0.9 simultaneously; Or multilayer indium phosphide/indium aluminium arsenic, the component of aluminium is greater than 0.46, to guarantee certain oxidation rate.
Characteristics of the present invention are,
The first, positive and negative two electrodes of vertical cavity surface emitting laser arrays unit adopt electrode in the chamber, and promptly the highly doped conductive layer with the active area both sides directly contacts, and injects charge carrier with recombination luminescence by it to active area.With common employing external electrode is that electrode is added in p type Bragg mirror surface and compares with the vertical cavity surface emitting laser of n type substrate back, avoided the bigger Bragg mirror district of current flowing resistance, thereby avoided a large amount of heatings and cause the drift of Bragg mirror reflection peak wavelength;
The second, the present invention adopts the Bragg mirror of multi-lager semiconductor/conductor oxidate, can realize higher reflectivity with the less number of plies, thereby the growth of the bigger Bragg mirror material of difficulty has been reduced requirement;
The 3rd, the column electrode of array and row electrode are owing to electrode in the employing chamber, and the Bragg mirror outside the chamber contains insulating barrier (conductor oxidate), realizes the isolation of positive and negative electrode and the isolation of each cell electrode easily;
The 4th, array adopts matrix addressing, can be with the addressing of less contact conductor number realization than multiple unit.
Description of drawings:
For further specifying structure of the present invention, below in conjunction with embodiment, the present invention is described in detail, wherein:
Fig. 1 is the array element schematic top plan view of device of the present invention,
Fig. 2 is the array schematic top plan view of device of the present invention,
Fig. 3 is the cross-sectional schematic of this device.
Specific embodiment:
Present embodiment comprises 8 row, 8 row totally 8 * 8 vertical cavity surface emitting laser unit (seeing accompanying drawing 3) altogether;
Below in conjunction with Fig. 1 and Fig. 2, the basic structure of the embodiment of the invention is described.
Each vertical cavity surface emitting laser unit comprises three platforms that size is successively decreased successively: bottom reflector mesa 10, laser cavity mesa 20 and top reflector mesa 30 also have p electrode 40 and n electrode 50;
Wherein bottom reflector mesa 10 comprises:
Half dielectric substrate 11;
One GaAs/aluminium oxide lower Bragg reflector 12;
One n type heavy doping GaAs conductive layer 13;
Laser cavity mesa 20 comprises:
Algaas layer 21 under one n type mixes;
The one GaAs lower limit layer 22 that undopes;
One GaAs/gallium aluminium arsenic the multiple quantum well active layer 23 that undopes;
The one GaAs upper limiting layer 24 that undopes;
One p type mixes and goes up algaas layer 25;
One p type heavy doping GaAs conductive layer 26;
Top reflector mesa 30 comprises:
Bragg mirror 31 on one GaAs/aluminium oxide.
See also Fig. 1, wherein said semi-insulating GaAs substrate 11 is mixed iron.
Wherein said GaAs/aluminium oxide lower Bragg reflector 12 is produced on semi-insulating GaAs substrate 11 upper surfaces, for the photon of the compound generation of charge carrier provides perpendicular reflector, each row n electric current of while isolated array, form by 7 pairs of GaAs/aluminium oxide, the thickness of GaAs is 58.5 nanometers in the every pair of GaAs/aluminium oxide, and the thickness of aluminium oxide is 130.3 nanometers; Described n type heavy doping GaAs conductive layer 13 is produced on GaAs/aluminium oxide lower Bragg reflector 12, so that the side direction injection channel of n electric current to be provided, mixes silicon, and concentration is 3 * 10
19Cm
-3, thickness is 175.5 nanometers.
Wherein said n type mixes down that algaas layer 21 is produced on the n type heavy doping GaAs conductive layer 13, and by partial oxidation, provides lateral limitation for injecting the n electric current, its not oxidized portion aluminium content be 0.96, mix silicon, concentration is 1 * 10
18Cm
-3, thickness is 69.9 nanometers, forms about 4 microns current channel; The gallium aluminium arsenic lower limit layer 22 that undopes is produced on the following algaas layer 21 of n type doping, and so that carrier confinement to be provided, aluminium content is 0.5, and thickness is 101.4 nanometers; Active layer 23 is produced on the gallium aluminium arsenic lower limit layer 22 that undopes, and charge carrier is recombination luminescence therein, is made up of with building 3 pairs of quantum well that undope, and wherein quantum well all is GaAs of 8 nanometers, and building all is the gallium aluminium arsenic (aluminium content is 0.3) of 10 nanometers; The GaAs upper limiting layer 24 that undopes is produced on the active layer 23, so that carrier confinement to be provided; Aluminium content is 0.5, and thickness is 101.4 nanometers; The p type mix to go up gallium aluminium arsenic 25 and is produced on the GaAs upper limiting layer 24 that undopes, and by partial oxidation, provides lateral limitation for injecting the p electric current, its not oxidized portion aluminium content be 0.96, mix silicon, concentration is 1 * 10
18Cm
-3, thickness is 69.9 nanometers, forms about 4 microns current channel; P type heavy doping GaAs conductive layer 26 is produced on the doping of p type and goes up on the gallium aluminium arsenic 25, so that the side direction injection channel of p electric current to be provided, is carbon dope, and concentration is 3 * 10
19Cm
-3
Bragg mirror 31 is produced on the p type heavy doping conductive layer 26 on wherein said GaAs/aluminium oxide, for the photon of the compound generation of charge carrier provides perpendicular reflector, and each row p electric current of isolated array simultaneously; Be made up of 5.5 pairs of GaAs/aluminium oxide, the thickness of GaAs is 58.5 nanometers in the every pair of GaAs/aluminium oxide, and the thickness of aluminium oxide is 130.3 nanometers;
See also Fig. 1 and Fig. 2, wherein said p type electrode 40 ringwise, is produced on the p type conductive layer 26, around the top reflector mesa 30, is gold/zinc/gold, or titanium/platinum/gold electrode, and the p type electrode of every capable vertical cavity surface emitting laser unit links to each other; N type electrode 50 ringwise, is produced on the n type conductive layer 13, around the laser cavity mesa 20, is gold/germanium/nickel electrode, and the n electrode of every row vertical cavity surface emitting laser unit links to each other.
The present invention compares with existing vertical cavity surface emitting laser arrays, vertical cavity surface emitting laser arrays of the present invention unit adopts electrode in the chamber, avoided a large amount of heatings in the bigger Bragg mirror district of current flowing resistance and cause and the drift of Bragg mirror reflection peak wavelength improved device reliability; Adopt the Bragg mirror of multilayer GaAs/aluminium oxide (or indium phosphide/indium oxide aluminium), can realize higher reflectivity with the less number of plies, reduced material growth requirement, reduced device cost and also simplified the later stage technology difficulty simultaneously Bragg mirror; The column electrode of array and row electrode are realized electrode isolation and cell isolation easily owing to adopt electrode in the chamber; Array adopts matrix addressing, can be with the addressing of less contact conductor number realization than multiple unit.Generally speaking, the present invention program realizes that easily it is simple to relate to technology, and demand equipment is low, and device cost is low and the reliability height has vast market prospect.
Claims (8)
1. the vertical cavity surface emitting laser arrays device of a matrix addressing is characterized in that, comprises following basic structure:
Be total to m * n vertical cavity surface emitting laser unit;
Wherein said vertical cavity surface emitting laser unit comprises three platforms that size is successively decreased successively: bottom reflector mesa, laser cavity mesa and top reflector mesa also have p electrode and n electrode;
This bottom reflector mesa comprises:
Half dielectric substrate;
Semiconductor/semiconductor oxide Bragg mirror once, this Bragg mirror is produced on substrate top surface, for the photon of the compound generation of charge carrier provides perpendicular reflector, each row n electric current of isolated array simultaneously;
One n type heavy doping conductive layer, this n type conductive layer is produced on the lower Bragg reflector, so that the side direction injection channel of n electric current to be provided;
This laser cavity mesa comprises:
Aluminous layer under one n type mixes;
One lower limit layer that undopes, this limiting layer is produced on down on the aluminous layer, so that carrier confinement to be provided;
One active layer that undopes, this active layer is produced on the lower limit layer, and charge carrier is recombination luminescence therein;
One upper limiting layer that undopes, this upper limiting layer is produced on the active layer, so that carrier confinement to be provided;
One p type mixes and goes up aluminous layer, and aluminous layer is produced on the upper limiting layer on this, and by partial oxidation, provides lateral limitation for injecting the p electric current;
One p type heavy doping conductive layer, this conductive layer is produced on the aluminous layer, so that the side direction injection channel of p electric current to be provided;
This top reflector mesa comprises:
One semiconductor-on-insulator/conductor oxidate Bragg mirror, this Bragg mirror are produced on the p type heavy doping conductive layer, for the photon of the compound generation of charge carrier provides perpendicular reflector, and each row p electric current of isolated array simultaneously;
This p type electrode is produced on the p type heavy doping conductive layer, around the top reflector mesa ringwise, and the p electrode of every capable vertical cavity surface emitting laser unit links to each other;
This n type electrode is produced on the n type heavy doping conductive layer, around the laser cavity mesa ringwise, and the n electrode of every row vertical cavity surface emitting laser unit links to each other.
2. the vertical cavity surface emitting laser arrays device of matrix addressing according to claim 1, it is characterized in that, wherein said p type heavy doping conductive layer and n type heavy doping conductive layer, in order fully to provide charge carrier to active area, its thickness is 0.75 times of effective wavelength, or 1.25 times of effective wavelengths, 1.75 times of effective wavelengths.
3. the vertical cavity surface emitting laser arrays device of matrix addressing according to claim 1, it is characterized in that, aluminous layer under aluminous layer and p type mixed under wherein said n type mixed, its thickness is 0.25 times of effective wavelength, wherein the component of aluminium is greater than 0.46 for the indium phosphide based material, is greater than 0.9 for the GaAs based material.
4. the vertical cavity surface emitting laser arrays device of matrix addressing according to claim 1 is characterized in that, wherein said p type electrode, and for each each vertical cavity surface emitting laser unit of going of array, its p type electrode links to each other.
5. according to the vertical cavity surface emitting laser arrays device of claim 1 or 4 described matrix addressings, it is characterized in that wherein said p type electrode is titanium/platinum/gold electrode, or gold/zinc/gold electrode.
6. the vertical cavity surface emitting laser arrays device of matrix addressing according to claim 1 is characterized in that, wherein said n type electrode, and for each vertical cavity surface emitting laser unit of each row of array, its n type electrode links to each other.
7. according to the vertical cavity surface emitting laser arrays device of claim 1 or 6 described matrix addressings, it is characterized in that wherein said n type electrode is gold/germanium/nickel electrode.
8. the vertical cavity surface emitting laser arrays device of matrix addressing according to claim 1, it is characterized in that, wherein said Bragg mirror and the lower Bragg reflector gone up, its material is multilayer GaAs/gallium aluminium arsenic before the oxidation, the component of aluminium is less than 0.99 and greater than 0.9, to weaken the volume compression effect of oxidation material, guarantee certain oxidation rate simultaneously; Or multilayer indium phosphide/indium aluminium arsenic, the component of aluminium is greater than 0.46, to guarantee certain oxidation rate.
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| CN107093840A (en) * | 2017-07-07 | 2017-08-25 | 北京工业大学 | Independent addressable liquid crystal tuning vertical cavity surface emitting laser arrays and preparation method |
| CN108879326A (en) * | 2018-07-06 | 2018-11-23 | 扬州乾照光电有限公司 | A kind of horizontal structure VCSEL chip and preparation method thereof and laser aid |
| CN110137802A (en) * | 2019-05-13 | 2019-08-16 | 苏州长光华芯半导体激光创新研究院有限公司 | A kind of small spacing solid matter vertical cavity surface emitting laser and preparation method thereof |
| CN111600200A (en) * | 2020-06-05 | 2020-08-28 | 苏州汉骅半导体有限公司 | Method for manufacturing vertical cavity surface emitting laser and vertical cavity surface emitting laser |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1043705C (en) * | 1995-04-27 | 1999-06-16 | 吉林大学 | H-type laser device transmitting perpendicularly to cavity surface |
| FR2753577B1 (en) * | 1996-09-13 | 1999-01-08 | Alsthom Cge Alcatel | METHOD FOR MANUFACTURING A SEMICONDUCTOR OPTOELECTRONIC COMPONENT AND COMPONENT AND MATRIX OF COMPONENTS MANUFACTURED ACCORDING TO THIS METHOD |
| DE19900816C2 (en) * | 1999-01-12 | 2001-04-26 | Siemens Ag | Vertical resonator laser diode with optimized active area, as well as laser pointer or laser pointer |
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| CN107093840A (en) * | 2017-07-07 | 2017-08-25 | 北京工业大学 | Independent addressable liquid crystal tuning vertical cavity surface emitting laser arrays and preparation method |
| CN108879326A (en) * | 2018-07-06 | 2018-11-23 | 扬州乾照光电有限公司 | A kind of horizontal structure VCSEL chip and preparation method thereof and laser aid |
| CN108879326B (en) * | 2018-07-06 | 2021-01-26 | 扬州乾照光电有限公司 | VCSEL chip with horizontal structure, manufacturing method thereof and laser device |
| CN110137802A (en) * | 2019-05-13 | 2019-08-16 | 苏州长光华芯半导体激光创新研究院有限公司 | A kind of small spacing solid matter vertical cavity surface emitting laser and preparation method thereof |
| CN111600200A (en) * | 2020-06-05 | 2020-08-28 | 苏州汉骅半导体有限公司 | Method for manufacturing vertical cavity surface emitting laser and vertical cavity surface emitting laser |
| CN111600200B (en) * | 2020-06-05 | 2021-05-07 | 苏州汉骅半导体有限公司 | Method for manufacturing vertical cavity surface emitting laser and vertical cavity surface emitting laser |
| JP2021068920A (en) * | 2021-02-02 | 2021-04-30 | 富士ゼロックス株式会社 | Light-emitting element array |
| JP7151803B2 (en) | 2021-02-02 | 2022-10-12 | 富士フイルムビジネスイノベーション株式会社 | light emitting element array |
| CN113540979A (en) * | 2021-07-09 | 2021-10-22 | 常州纵慧芯光半导体科技有限公司 | Vertical cavity surface emitting laser |
| CN113540979B (en) * | 2021-07-09 | 2022-06-24 | 常州纵慧芯光半导体科技有限公司 | Vertical cavity surface emitting laser |
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