CN1618727A - Nano-beam resonator with field effect pipe manufactured using sacrifice layer corrosion technology - Google Patents
Nano-beam resonator with field effect pipe manufactured using sacrifice layer corrosion technology Download PDFInfo
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- CN1618727A CN1618727A CN 200410089180 CN200410089180A CN1618727A CN 1618727 A CN1618727 A CN 1618727A CN 200410089180 CN200410089180 CN 200410089180 CN 200410089180 A CN200410089180 A CN 200410089180A CN 1618727 A CN1618727 A CN 1618727A
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Abstract
A nanobeam resonator with FET is prepared by sacrifice layer etching process, and is composed of nanobeam resonator and its metallic electrodes. Said etching process includes such steps as preparing the nanobeam on the silicon layer on the insulating material (SOI), doping B or P to both ends of nanobeam to form P-i-P or N-i-N channel structure used as the channel of FET, and using the bottom electrode as the grid of FET.
Description
Technical field
The present invention relates to a kind of resonator, particularly nano-beam resonator.
Background technology
Nano-beam resonator is very typical electromechanics (Nano Electromechanical System, the NEMS) device received.It not only can be used as radio-frequency filter, oscillator, frequency reference element etc. and is directly used in radio circuit, and many sensors are based on resonator, for example resonant transducer, gyro etc.(Micro ElectromechanicalSystem, NEMS MEMS) in the device, have developed a lot and suitable excitation of MEMS device and detection mode, for example electromagnetism, static, pressure drag, laser or the like micro electronmechanical.But concerning a nano-beam resonator, because volume is too little, excitation and the detection means generally used in the MEMS device will no longer be suitable for nano-beam resonator.The detection method that is used for nano-beam resonator at present, the auxiliary electromagnetic detection of high-intensity magnetic field for example, because signal is smaller, and background is very strong, thus the dynamic range major part of testing circuit is shared by background.And the another kind of difference detecting method that is similar to resistance bridge because signal and driving voltage are same frequencys, requires to have certain problem than higher occasion for contrasts such as analyzing noise.
Summary of the invention
The nano-beam resonator of the band FET that the sacrifice layer corrosion technology that the purpose of this invention is to provide a kind of low cost, adapt to detect is made.And manufacture craft is simple, with the NEMS process compatible, cooperates with the static driving again, realizes structure, the driving of nano-beam resonator and detect the three fully integrated.
Above-mentioned purpose of the present invention adopts following technical scheme to be achieved: comprise nano-beam resonator and metal electrode thereof, described nano-beam resonator produces with sacrifice layer corrosion technology on silicon materials on the insulating barrier, mix at its two ends and to form P-i-P or N-i-N channel structure, as the nano beam of FET raceway groove, substrate silicon is as the gate electrode of FET.
The FET detection method is actual to be based on the FET that a channel width and thickness reach nanometer scale, and what its gate insulation layer adopted is vacuum gap or the air gap.(the Silicon on Insulator of silicon on insulating barrier, SOI) produce nano beam on the material, with the raceway groove of this nano beam as FET, mix in two ends in nano beam, thereby form P-i-P or N-i-N channel structure, utilize substrate silicon as gate electrode, so just constitute a bottom gate thin film FET.In this structure, add a Dc bias and an AC drive voltage in bottom gate thin film, this Dc bias provides a fixing grid voltage for FET, and AC drive voltage will produce the vibration of an alternation electrostatic force driving nano beam.The nanometer vibration of beam will make electric field produce and change, thereby cause electric current appearance change in the raceway groove.Therefore this phenomenon can be used as a kind of detection method of nano-beam resonator no matter how many sizes of beam is all will exist.Detect the change situation of above-mentioned electric current, promptly can measure the Oscillation Amplitude and the frequency of nano beam.
The present invention is owing to utilize channel width of its inside configuration and the FET that thickness reaches nanometer scale, as the detection method of nano-beam resonator.This nano-beam resonator manufacture craft is simple, with the NEMS process compatible, and can cooperate structure, the driving that realizes nano-beam resonator with the static driving and detect the three fully integrated.And no matter how the size of beam changes, this method all is suitable for.Therefore, enforcement of the present invention can reduce cost for nano-beam resonator from now on, the extent of spreading amd application plays good effect.
Description of drawings
Fig. 1 is a perspective view of the present invention;
Fig. 2 is the A-A sectional structure schematic diagram of Fig. 1.
The specific embodiment
With reference to Fig. 1, Fig. 2, the present invention is to be raw material with the SOI silicon epitaxial wafer, adopts the manufacturing of micro-nano mechanical processing technique.It is as mask with photoresist that cantilever nano beam 6 is made, with the silicon dioxide insulating layer 3 in the middle of reactive ion etching (Reactive Ion Etching) the technology etching silicon layer 4 to SOI, and then utilize sacrifice layer corrosion technology that nano beam 6 following silicon dioxide insulating layers 3 are emptied.Cantilever nano beam 6 sidewalls that use this technology to produce are vertical.The making of P-i-P or N-i-N channel structure is to utilize photoresist to go out to need doped regions as mask lithography, carries out boron or phosphorus subsequently and injects formation P
+Or N
+The zone.
Concrete manufacture craft is described below:
1, is raw material with the SOI silicon epitaxial wafer, makes the silicon epitaxial wafer of standard through cutting, cleaning etc.
2, utilize electron-beam direct writing (Electron beam direct writing) technology to make the figure of nano beam 6 by lithography.
3, utilize reactive ion etching technology to etch the structure of nano beam 6 after the photoetching.
4, the two ends that utilize photoetching technique to etch nano beam 6 once more need doped regions.
5, under the mask of photoresist, carry out heavy doping boron or phosphorus at the two ends of nano beam 6, thereby form P-i-P or N-i-N channel structure.
6, utilize vacuum evaporation technique and photoetching technique to etch the metal electrode 5,7 at nano beam 6 two ends.
7, utilize sacrifice layer corrosion technology to erode silicon dioxide insulating layer 3 below the nano beam 6, make the structure of unsettled formation air-bridges (Air-Bridge) below the nano beam 3.
8, on the bottom surface of silicon substrate 2, make metallic bottom electrode 1, as the grid of FET.
For nano-beam resonator, main performance index comprises operating frequency, quality factor and signal to noise ratio.In this structure, on the gate electrode of FET, will add a Dc bias and an AC drive voltage, this Dc bias provides a fixing grid voltage for FET, and AC drive voltage will produce 6 vibrations of an alternation electrostatic force driving nano beam.This alternation electrostatic force has two components, a same frequency component and one two frequency multiplication component, the product of the amplitude of same frequency component and Dc bias and alternating voltage amplitude is proportional, and the amplitude of two frequency multiplication components is only proportional with the amplitude square of alternating voltage, and is irrelevant with Dc bias.When the alternating voltage frequency reach nano beam 6 resonant frequencies 1/2 near the time, nano beam 6 is resonance under the effect of double frequency component, thereby make FET source drain terminal electric current the output that frequency is 2 times of alternating voltage frequencies occur, this output directly is directly proportional with the Oscillation Amplitude of nano beam 6, therefore can measure the Oscillation Amplitude and the frequency of nano beam 6.
Claims (1)
1, a kind of nano-beam resonator of band FET of sacrifice layer corrosion technology manufacturing, comprise nano-beam resonator and metal electrode thereof (5,7), it is characterized in that: described nano-beam resonator produces with sacrifice layer corrosion technology on silicon materials on the insulating barrier, mix at its two ends and to form P-i-P or N-i-N channel structure, as the nano beam (6) of FET raceway groove, substrate silicon (2) is as the gate electrode of FET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410089180 CN1618727A (en) | 2004-12-01 | 2004-12-01 | Nano-beam resonator with field effect pipe manufactured using sacrifice layer corrosion technology |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410089180 CN1618727A (en) | 2004-12-01 | 2004-12-01 | Nano-beam resonator with field effect pipe manufactured using sacrifice layer corrosion technology |
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| CN1618727A true CN1618727A (en) | 2005-05-25 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100478271C (en) * | 2006-04-25 | 2009-04-15 | 北京大学 | Prepn process of beam structure in nanometer width |
| CN100526208C (en) * | 2005-12-30 | 2009-08-12 | 中国科学院上海微系统与信息技术研究所 | Nano width resonance structure on silicon sheet of SOI and preparation process thereof |
| CN101311105B (en) * | 2008-02-26 | 2012-01-04 | 中国科学院上海微系统与信息技术研究所 | Nano beam structure produced using no-electrode electrochemical corrosion self-stop and method thereof |
| CN101565162B (en) * | 2009-06-03 | 2013-03-06 | 中国科学院上海微系统与信息技术研究所 | Structure and method of using step electrodes to realize nanometer beam drive and pressure resistance detection |
| CN107601425A (en) * | 2017-08-10 | 2018-01-19 | 大连理工大学 | A kind of printing manufacture method of nano beam structure |
| CN108132084A (en) * | 2017-12-21 | 2018-06-08 | 山东理工大学 | A kind of micro- apparatus for measuring quality of receiving based on FET grid displacement sensitivity |
-
2004
- 2004-12-01 CN CN 200410089180 patent/CN1618727A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100526208C (en) * | 2005-12-30 | 2009-08-12 | 中国科学院上海微系统与信息技术研究所 | Nano width resonance structure on silicon sheet of SOI and preparation process thereof |
| CN100478271C (en) * | 2006-04-25 | 2009-04-15 | 北京大学 | Prepn process of beam structure in nanometer width |
| CN101311105B (en) * | 2008-02-26 | 2012-01-04 | 中国科学院上海微系统与信息技术研究所 | Nano beam structure produced using no-electrode electrochemical corrosion self-stop and method thereof |
| CN101565162B (en) * | 2009-06-03 | 2013-03-06 | 中国科学院上海微系统与信息技术研究所 | Structure and method of using step electrodes to realize nanometer beam drive and pressure resistance detection |
| CN107601425A (en) * | 2017-08-10 | 2018-01-19 | 大连理工大学 | A kind of printing manufacture method of nano beam structure |
| CN108132084A (en) * | 2017-12-21 | 2018-06-08 | 山东理工大学 | A kind of micro- apparatus for measuring quality of receiving based on FET grid displacement sensitivity |
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