CN1614081A - Composite thin film preparation and preparing apparatus - Google Patents
Composite thin film preparation and preparing apparatus Download PDFInfo
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- CN1614081A CN1614081A CN 200410060530 CN200410060530A CN1614081A CN 1614081 A CN1614081 A CN 1614081A CN 200410060530 CN200410060530 CN 200410060530 CN 200410060530 A CN200410060530 A CN 200410060530A CN 1614081 A CN1614081 A CN 1614081A
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Abstract
The invention was involved in one film complex preparation method and its equipment. The process consist of the following steps: a) Under definite background vacuum degree, inactive gas or complex gas of inactive gas and reacting gas was filled to provide the elementary particle which was required for surface modification by the single or combined way of magnetron sputtering, vacuum negative pole arc evaporator source or gas leading-in. b) The plasma was limited in the space and complex modification on the space relying on one closed magnetic field or open loop magnetic field. c) Apply bias voltage impulse of negative 10-100kV to realize ion injection based on the negative pole of the workpiece. When it didn't need to inject, the bias voltage was in the range of -2000-300V. The equipments adopted by the method consist of vacuum system (1), vacuum cavity (2), magnetron sputtering source and/or vacuum negative pole arc evaporator source (4), high pressure workpiece (5), gas supply system (6), power supply and control system (7).
Description
(1) technical field
The present invention relates to a kind of film composite preparation process and device, be used for the material surface modifying field.
(2) background technology
Magnetron sputtering, the ion plating of vacuum cathode arc evaporation are that present industrial circle is used film preparation means extremely widely, and fields such as decoration, tool and mould, optics, electronics, medical science have been widely used.And the comprehensive ion implantation technique that development in recent years is come out because overcome the ion implantation shortcoming that can only inject from certain specific direction of sight line formula and must pay attention to, has been launched number of research projects both at home and abroad.
Though magnetron sputtering has the advantage of film forming exquisiteness, because of its deposition mainly is to rely on the sputtered atom deposition, therefore, atmosphere poor activity when film forming scope weak point, deposition is to the processing requirement harshness.And the ion plating of vacuum cathode arc evaporation is to be the film deposition techniques of base with the arc plasma, ionization level is very high, therefore the deposition atmosphere activity is good, Technological adaptability is good, and can large space, deposit film on a large scale, still, because of the need evaporation cathode, when plated film, can produce macroscopical drop or particle contamination film, become the starting point that film lost efficacy.And, have tangible interface between surface reforming layer that magnetron sputtering technique and vacuum cathode arc evaporation ion plating technique obtain and the matrix, can not realize good binding between rete and the matrix.In case and rete forms, its composition function can not change again.Though comprehensive ion implantation technique has omnibearing advantage, its modified layer is shallow, in big load, the be on active service harsh application scenario such as the application scenario of tool and mould, acts on limited.
Therefore, some duplex surface modification technology appear in recent years.Wherein, add magnetron sputtering plating or the ion plating of vacuum cathode arc evaporation with ion implantation, the technology of taking as the leading factor is carried out compound, obtained good effect, but in the present technology, the ion implantation technique that is adopted is generally sight line formula ion implantation technique, and ion implantation have a directivity, can not deal with the workpiece of surfaces of complex shape.Employing is also arranged with the plasma based ion implantttion technique of cusped magnetic field magnetic wall constraint but this method adopts the permanent magnetic strip formation can cut the mode confining plasma of magnetic wall usually, vacuum cavity involves great expense; The source of being adopted, though metallic plasma, the gaseous plasma of injection can be provided, because the arrangement in source, and select for use, can not satisfy the processing of workpiece in enormous quantities.Especially when vacuum arc evaporation source and controlled sputtering source are worked simultaneously, the plasma that vacuum arc evaporation source produced is known from experience the influence of the cusped magnetic field that is subjected to vacuum wall, can not effectively enter vacuum cavity or can not enter the efficient part of surface modification.
Occur some in recent years and utilize Distribution of Magnetic Field, the method for control or improvement modification technology.Find the English Patent of Teer company application: the patent No.: GB2,258 by literature search, 343, patent name: magnetic controlled sputtering ion plating, (Magnetron sputter ion plating), this patented technology is to adopt two or multi-magnetron more, is centered around around the substrate.Magnetron mutually near, magnetic field adjacent magnetic pole reversed polarity, the magnetic field that is is connected to each other, and constitutes the mode in closed loop magnetic field.Like this, just the electronics that produces in the system all is strapped in the system, has increased substrate ionization level on every side, increased the effect of ion bombardment substrate.In this patent, though propose to adopt the about beam electrons in magnetic field,, just adopt the mode of magnetron sputtering, do not adopt vacuum arc, therefore, the processing requirement of magnetron sputtering is harshness still, and is not the duplex surface modification technology.
(3) summary of the invention
The present invention is directed to the deficiencies in the prior art, a kind of film composite preparation process and device are provided, make its electromagnetic structure that makes full use of magnetron sputtering, vacuum cathode arc evaporation itself constraint plasma body, for comprehensive ion implantation surface modification provides required plasma body, solve the permanent magnetic strip that adopts or can cut the shortcoming that vacuum cavity that the mode confining plasma of magnetic wall causes involves great expense, it is simple to have magnetic structure, the advantage that cost is low; Can design the constituent structure of film as required, thereby be easy to make the modification rete that obtains, improve hardness, oxidation-resistance and the thermostability etc. of film as required.
The present invention is achieved by the following technical solutions, and method steps is as follows:
(1) when vacuum tightness arrival or less than 5 * 10
-3After the vacuum tightness, feed the mixed gas of rare gas element such as argon gas or rare gas element and reactant gases at the bottom of the Pa or the lower back of the body, vacuum tightness is maintained 5Pa to 3 * 10 as required
-2Between the Pa.Import the independent or combination of three kinds of modes by magnetron sputtering, vacuum cathode arc evaporation source, gas, provide surface modification needed ultimate particle, these ultimate particle, by magnetron sputtering, vacuum cathode arc evaporation or from the mode of aura, the permutation and combination of perhaps above-mentioned three kinds of modes, ionization are plasma body.Also can introduce extra heated filament electronics therein is plasma body with ionization of gas wherein.
(2) obtain to be in plated film ultimate particle in the plasma body after, relies on a closed loop magnetic field, plasma containment inside a space, at this moment, is composite modifiedly carried out in the plasma space that this closed loop magnetic field is retrained.Perhaps rely on the semiclosed magnetic field of open loop, to certain deposition direction, the workpiece that is modified is positioned at the open loop exit in the semiclosed magnetic field of open loop with plasma containment.
(3) this closed loop magnetic field or the semiclosed magnetic field of open loop are positioned at the inside of vacuum cavity.The annular section in closed loop magnetic field or the semiclosed magnetic field of open loop is meant that the N utmost point points to the magnetic line of force of the S utmost point.The formation method in closed loop magnetic field or the semiclosed magnetic field of open loop is: the magnetic line of force that overlaps the N utmost point sensing S utmost point connects more to be combined, constitute N-S-N-S-N-S ... the magnetic pole connection chain, along vacuum chamber body wall circumferential array, and join end to end at last, just constitute closed loop magnetic field.When the such N utmost point of many covers points to the magnetic line of force of the S utmost point, along the vacuum cavity inwall arrange do not join end to end the time, when last joint is two N utmost points or two S utmost points, just constitute the semiclosed magnetic field of open loop.The generation in this closed loop or the semiclosed magnetic field of open loop, can be to utilize the magnetic field of magnetron sputtering itself and the magnetic field of constraint vacuum arc, by connecting and composing of arrange the N utmost point and the S utmost point, also can adopt the special-purpose auxiliary N utmost point and the S utmost point to interconnect, constitute closed loop or the semiclosed magnetic field structure of open loop.The magnetic wall of the cusped magnetic field of being adopted with present comprehensive ion injection method is different.
(4) electronics in the plasma body and ion are when passing through this ring-type magnetic field, will be subjected to the effect of Lauren time power, thereby change direction of motion, can not directly arrive on the wall behind the ring, and perhaps move to the open loop direction in the semiclosed magnetic field of open loop in the ring inside in restrained closed loop in a vacuum magnetic field.With the workpiece to be processed plasma body that places this closed loop or the semiclosed magnetic field of open loop to be retrained, perhaps open loop place in the semiclosed magnetic field of open loop.
(5) be negative electrode with the workpiece, apply with negative 10KV-100KV bias pulse that under this high negative bias pulse action, electronics is evicted from workpiece surface, form the sheath layer near workpiece, ion passes this sheath layer and is accelerated, and is injected into workpiece inside, realizes ion implantation.When not needing when ion implantation, workpiece also can apply scope at the bias voltage of negative 2000V to positive 300V, rely on magnetron sputtering and (or) vacuum arc, carry out depositing of thin film.In thin film deposition, magnetron sputtering, vacuum cathode arc evaporation deposition and ion implantation three kinds of technologies can make up separately or in twos, or the three simultaneously, and order is as required opened or be closed, prepares the modification rete.Begin in thin film deposition, perhaps in the process, perhaps in thin film deposition, carry out ion implantationly, realize film component control, and then the controlling diaphragm structure, realize the performance of controlling diaphragm.
Apparatus of the present invention, by vacuum system, vacuum cavity, airing system, controlled sputtering source and (or) vacuum cathode arc evaporation source, high pressure work rest, power supply and Controlling System constitute.Vacuum system is connected on the vacuum cavity by the venting hole that is arranged on the vacuum cavity, for vacuum cavity provides back of the body end vacuum, and with airing system, provides plated film air pressure; Controlled sputtering source and (or) the vacuum cathode arc evaporation source is distributed in around the vacuum cavity.There are three kinds of feasible arrangement modes in these sources of being adopted.Arrange for first kind and be: with controlled sputtering source and (or) the vacuum cathode arc evaporation source all places on the vacuum chamber body wall, perhaps near around the vacuum chamber body wall inboard; Arranging for second kind is the outside that the part source is placed vacuum cavity, is connected to vacuum cavity by flange hole, the part place vacuum chamber intravital around; The third arrangement mode is with the active vacuum cavity outside that places of institute, all is connected with vacuum cavity by flange hole.But, three kinds of above-mentioned source arrange the feature that has be controlled sputtering source and (or) magnetic field structure of vacuum cathode arc evaporation source, adopt the formation closed loop magnetic field or the semiclosed magnetic field of open loop of the extremely end to end mode of the N utmost point and S, under the effect in this closed loop magnetic field, plasma body is constrained on therebetween.The high pressure work rest is in the middle part of vacuum cavity, and keeps insulation with vacuum cavity.The high pressure work rest is arranged in this restrained plasma body, and workpiece places or is suspended on the work rest.The distance of high pressure work rest and vacuum cavity bottom is greater than 60mm, and under the effect of high workpiece negative bias, near the ion the workpiece in the plasma body is realized comprehensive ion implantation by the acceleration of sheath layer.
Controlled sputtering source and vacuum cathode arc evaporation source can be square type, long strip type, circular, and the vacuum cathode arc evaporation source also can be rectangle, long strip type, circle.Controlled sputtering source that is adopted and vacuum cathode arc evaporation source be in the exit in source, the magnetic line of force that must be able to disperse out.Like this, the outlet in source can be regarded as the magnetic pole of a S utmost point or the N utmost point.Arranging of controlled sputtering source and vacuum cathode arc evaporation source must be to realize being connected of the N utmost point and the S utmost point, like this, injects the magnetic line of force that points to vacuum cavity inside from the N utmost point, and the S utmost point around this N utmost point penetrates, and constitutes closed loop magnetic field or the semiclosed magnetic field of open loop.For closed loop magnetic field: the feature of arranging of the N utmost point and the S utmost point is all to be the S utmost point around the N utmost point at an arbitrary position, all is the N utmost point around the S utmost point, and the N utmost point and the S utmost point are alternately.For the semiclosed magnetic field of open loop: the N utmost point and the S utmost point are the homopolarity magnetic pole except two utmost points in the exit in the semiclosed magnetic field of open loop, and the magnetic pole that constitutes circular part also is the N utmost point and S utmost point interphase distribution.
The direction of the closed loop magnetic field ring that forms is that the direction along the vacuum chamber body wall circumferentially distributes, and has the effect of confining plasma to the diffusion of vacuum chamber body wall.
Controlled sputtering source and vacuum cathode arc evaporation source and ion implantation used power supply all are to be provided by power supply and Controlling System, and power supply and Controlling System can also provide the bias voltage that is applied on the high pressure work rest.The power supply that apparatus of the present invention adopted is independently, can distinguish separately and regulate.
After adopting the present invention, can between film and matrix, form mixed interface, improve bonding strength, improve the affinity of substrate material thin-film material, the method that has solved independent employing magnetron sputtering or vacuum cathode arc evaporation prepares rete sharp interface, in conjunction with illusive problem; Can carry out comprehensive doping to film in film process and after film forming, the one-tenth that changes film is grouped into, thereby can control the structure of film; In case solved magnetron sputtering or vacuum cathode arc evaporation deposition film forming, the problem that its composition function can not change again; Also solved the problem of magnetron sputtering to the processing requirement harshness; And adopt magnetron sputtering and vacuum cathode arc evaporation technology and comprehensive ion implantation the combination, can solve the shallow problem of comprehensive ion-implanted surface-modified layer.
(4) description of drawings
Fig. 1 apparatus of the present invention one-piece construction synoptic diagram.
Exemplary construction synoptic diagram of Fig. 2 the present invention.
The magnetic field of a plurality of rectangles of Fig. 3 the present invention or long strip shape controlled sputtering source and long strip shape vacuum cathode arc evaporation source is magnetic field arrangement synoptic diagram on the vacuum chamber body wall.
The circular controlled sputtering source of Fig. 4 the present invention and vacuum cathode arc evaporation source magnetic field arrangement on the vacuum chamber body wall launch arrangement synoptic diagram in the plane.
(5) embodiment
As shown in Figure 1, apparatus of the present invention comprise: vacuum system 1, vacuum cavity 2, controlled sputtering source 3 and (or) vacuum cathode arc evaporation source 4, high pressure work rest 5 and airing system 6, power supply and Controlling System 7 constitute.Need to prove, among the present invention the number of the controlled sputtering source that adopts and the vacuum cathode arc evaporation source number that is not limited to provide among the figure.
Below the content of the inventive method is further described, particular content is as follows:
At first, vacuum cavity air pressure is extracted into air pressure＜1 * 10
-2After the vacuum, the gas that gas that adding rare gas element such as argon gas or plated film need or plated film need and the mixed gas of rare gas element make vacuum tightness be returned to 9Pa-9 * 10 at the bottom of the back of the body of Pa
-2Between the Pa, at this time light electric arc or open magnetron sputtering, perhaps when lighting the vacuum cathode arc evaporation source, open controlled sputtering source.The particle that surface modification is used, by magnetron sputtering, perhaps vacuum cathode arc evaporation, perhaps the method for the combination of magnetron sputtering and two kinds of methods of vacuum cathode arc evaporation supplies to the vacuum cavity the inside above solid target.The gas particle that surface modification is used by the gas feed system, is presented and is entered vacuum cavity.
The field pole polarity that controlled sputtering source adjacent one another are and place, vacuum cathode arc evaporation source edge exhale is opposite, and the N utmost point and S are extremely end to end, constitutes closed loop magnetic field.
Under the effect of controlled sputtering source or comprehensive ion implantation power supply, the vacuum cavity the inside produces glow discharge plasma, under the effect of vacuum cathode arc evaporation source, produce arc discharge plasma in the vacuum cavity, in the plasma body, electronic motion is subjected to the constraint in the closed loop magnetic field that the magnetic field by the magnetic field of controlled sputtering source, vacuum cathode arc evaporation source constitutes, the closed loop magnetic field magnetic line does not pass vacuum cavity except at controlled sputtering source or vacuum cathode arc evaporation source place at elsewhere.Magnetic field is with the inside of plasma containment at vacuum cavity, and the workpiece that is modified is arranged in restrained plasma body, and under the effect of work rest negative high voltage or bias voltage, particle deposits or be infused in workpiece surface, realizes the compound preparation of film.
Fig. 2 has provided the present invention when adopting two rectangle controlled sputtering sources and two rectangular vacuum cathodic arc evaporation sources, the structural representation of apparatus of the present invention, 2 is vacuum cavity among the figure, 4 is two vacuum cathode arc evaporation sources, the vacuum cathode arc evaporation source can be various known vacuum arc evaporation sources, locates to disperse out magnetic line of force in vacuum arc plasma body outlet.The vacuum arc plasma body enters vacuum cavity 2 from the vacuum cathode arc evaporation source under the guiding of the magnetic field magnetic line that produces in the exit.Vacuum cathode arc evaporation source 4 also can be to utilize the magnetic structure of vacuum cathode arc source control vacuum arc movement locus itself that (not providing in this instance graph) is provided in the magnetic field in exit, can be that solenoid also can be that permanent magnet provides magnetic field, can disperse on vacuum cavity 2 internal direction at plasma body, produce the magnetic field of pointing to vacuum cavity inside.3 is two controlled sputtering sources, and they are also electromagnetism of permanent magnetism both, exhales the magnetic line of force that points to vacuum cavity 2 inside at the Way out of controlled sputtering source.Magneticfield coil, magnetic control magnet, magnetic control coil, magnetic control magnet are adjacent successively, are arranged in around the vacuum cavity 2.Because the magnetic line of force polarity that adjacent pole sends is opposite, therefore formed the closed loop magnetic field of confining plasma in vacuum cavity 2 inside.High pressure work rest 5 is located in the centre in this closed loop magnetic field.Can arrange in pairs or groups arbitrarily in the position of above-mentioned vacuum cathode arc evaporation source 4 and controlled sputtering source 3, the polarity that will guarantee the electromagnetic field of dispersing out between the adjacent source is opposite but it is arranged.
The number of controlled sputtering source 3 and vacuum cathode arc evaporation source 4 can be not just above in the example four, also can be more a plurality of as six.Fig. 3 has provided the device synoptic diagram that adopts four rectangle controlled sputtering sources 3 and two rectangular vacuum cathodic arc evaporation sources 4.The arrangement characteristics in each source still are that the polarity in the magnetic field of sending between each adjacent source is opposite among the figure, constitute closed loop magnetic field.In the drawings, also one of them vacuum cathode arc evaporation source 4 source can be removed, all the other magnetic fields are arranged constant, at this moment controlled sputtering source 3 will with controlled sputtering source 3 contiguous, closed loop magnetic field originally just is opened at original vacuum cathode arc evaporation source place, constitutes the semiclosed magnetic field structure of open loop.
Also can adopt circular controlled sputtering source 3 or circular vacuum cathode arc evaporation source 4, Fig. 4 has provided when adopting circular controlled sputtering source 3 and vacuum cathode arc evaporation source 4, arranges and launch in the plane arrangement synoptic diagram in its magnetic field on vacuum cavity 2 walls.Each round source (both can be that controlled sputtering source also can be the vacuum cathode arc evaporation source), its feature of arranging represented still is that the magnetic field that send in adjacent source will guarantee that total field pole polarity (the N utmost point or the S utmost point) of sending in each source is opposite among the figure.
The duplex surface modification of plated film example 1, LD12 aluminum alloy surface diamond-like carbon film
At first feed argon gas to vacuum tightness 5 * 10
-2Pa, the high pressure work rest adds-the 1000V high pressure, glow discharge bombardment aluminum alloy surface, afterwards, open the titanium target do the controlled sputtering source of negative electrode (400V) and the titanium target do the vacuum cathode arc evaporation source of negative electrode, at the titanium layer of aluminum alloy surface deposition 10nm thickness, the mixed gas of logical acetylene gas and argon gas is to vacuum tightness 7 * 10
-1Pa opens high-voltage power supply, applies on work rest-voltage of 50kV, realizes C, the comprehensive injection of Ti ion, and the deposition of Ti, C particle.Keep the vacuum constant, improve constantly the flow of acetylene gas, turn off magnetron sputtering primary source and vacuum cathode arc power, the magnetic control coil that keeps controlled sputtering source and vacuum cathode arc evaporation source continues confining plasma, high pressure on the work rest is decreased to-15kV, forms the DLC film in aluminum alloy surface.Obtaining hardness on LD12 is the DLC protective membrane of 1400HV.
The TiAlN surface modification of plated film example 2, speedy steel cutting-tool
At first take out back of the body end vacuum to 1 * 10
-3Pa is heated to 300 ℃ with cutter, pours argon gas to vacuum tightness 3 * 10
-1Pa, open with the titanium target is the vacuum cathode arc evaporation source of negative electrode, Ti at tool surface deposition 20nm, logical afterwards N gas, open with the titanium target is the controlled sputtering source of negative electrode, adopt magnetron sputtering and two kinds of method codepositions of vacuum cathode arc evaporation TiN, after depositing to 2 microns, opening with aluminium is the controlled sputtering source of negative electrode, the high pressure work rest applies-and the negative bias of 15kV, realize that Ti, Al, N are ion implantation, obtain the composition transition of TiN to TiAlN, afterwards, close negative high voltage, apply-bias voltage of 100V depositing Ti AlN.The hardness of the TiAlN rete that obtains is at 2500HV.
Plated film example 3, the acquisition of Ti-DLC surface reforming layer above the stainless steel
At first deposit one deck Ti at stainless steel surface by the vacuum cathode arc evaporation, afterwards, on titanium layer, inject N and adopt magnetron sputtering and the method depositing TiN of vacuum cathode electric arc, afterwards, feed acetylene gas, inject C on TiN, form the transition layer of TiCN, opening with graphite is the vacuum cathode arc evaporation source of negative electrode, under the atmosphere of acetylene, electric current 80A, voltage 35V, DLC films deposited 5 minutes, open with the titanium is that the controlled sputtering source of negative electrode applies on workpiece simultaneously-negative high voltage of 30kV, carry out Ti, the C ion injects altogether, obtains to contain the DLC film of Ti, and hardness is at 1200HV.
Claims (9)
1, a kind of film composite preparation process is characterized in that method steps is as follows:
(1) when vacuum tightness less than 5 * 10
-3After the vacuum tightness, feed the mixed gas of rare gas element and reactant gases at the bottom of the back of the body of Pa, vacuum tightness is maintained 5Pa to 3 * 10
-3Between the Pa, import the independent or combination of three kinds of modes by magnetron sputtering, vacuum cathode arc evaporation source, gas, provide surface modification needed ultimate particle, these ultimate particle, by magnetron sputtering, vacuum cathode arc evaporation or from the mode of aura, the permutation and combination of perhaps above-mentioned three kinds of modes, ionization are plasma body;
(2) rely on closed loop magnetic field or the semiclosed magnetic field of open loop, plasma containment in the inside, a space, is composite modifiedly carried out in the space;
(3) this closed loop magnetic field or the semiclosed magnetic field of open loop are positioned at the inside of vacuum cavity, the annular section in closed loop magnetic field or the semiclosed magnetic field of open loop is meant that the N utmost point points to the magnetic line of force of the S utmost point, the generation in this closed loop or the semiclosed magnetic field of open loop, be the magnetic field that utilizes the constraint vacuum arc of the magnetic field of controlled sputtering source itself and vacuum cathode arc source, by connecting and composing of arrange the N utmost point and the S utmost point, perhaps adopt the auxiliary N utmost point and the S utmost point to interconnect, constitute closed loop or the semiclosed magnetic field structure of open loop;
(4) be negative electrode with the workpiece, apply the bias pulse of negative 10KV-100KV, realize ion implantation; When not needing when ion implantation, workpiece applies scope at the bias voltage of negative 2000V to positive 300V.
2, film composite preparation process according to claim 1 is characterized in that, in the step (1), perhaps introducing extra heated filament electronics in vacuum cavity is plasma body with ionization of gas wherein.
3, film composite preparation process according to claim 1, it is characterized in that, in the step (3), the formation method in closed loop magnetic field or the semiclosed magnetic field of open loop is: the magnetic line of force that overlaps the N utmost point sensing S utmost point connects more to be combined, constitute N-S-N-S-N-S ... the magnetic pole connection chain, along vacuum chamber body wall circumferential array, and join end to end at last, just constitute closed loop magnetic field, point to the magnetic line of force of the S utmost point when the such N utmost point of many covers, when two N utmost points of appearance or two S utmost points interconnect in the magnetic pole connection chain that the vacuum cavity inwall is arranged, just constitute the semiclosed magnetic field of open loop.
4, film composite preparation process according to claim 1, it is characterized in that, in the step (4), make up separately or in twos or three's while by vacuum cathode arc evaporation deposition, magnetron sputtering, ion implantation three kinds of technologies, open in order or closure, prepare the modification rete; Begin in thin film deposition, perhaps in the process, perhaps in thin film deposition, carry out ion implantation.
5, the compound preparation facilities of a kind of film, comprise: vacuum system (1), vacuum cavity (2), controlled sputtering source (3) and/or vacuum cathode arc evaporation source (4), high pressure work rest (5), airing system (6) and power supply and Controlling System (7) is characterized in that: vacuum system (1) is connected with vacuum cavity (2) by the venting hole that is arranged on the vacuum cavity (2) with airing system (6); Controlled sputtering source (3) and/or vacuum cathode arc evaporation source (4) are distributed in vacuum cavity (2) all around, and adopt the formation closed loop magnetic field or the semiclosed magnetic field of open loop of the extremely end to end mode of the N utmost point and S; High pressure work rest (5) is in the middle part of vacuum cavity (2), and workpiece places or is suspended on the high pressure work rest (5), insulation between high pressure work rest (5) and the vacuum cavity (2); Vacuum system (1), vacuum cavity (2), controlled sputtering source (3) and/or vacuum cathode arc evaporation source (4), high pressure work rest (5), airing system (6) are electrically connected with power supply and Controlling System (7).
6, the compound preparation facilities of film according to claim 5, it is characterized in that vacuum cavity (2) all around controlled sputtering source (3) and/or the magnetic field of vacuum cathode arc evaporation source (4) itself pass through N-S-N-S ... the magnetic pole connection chain constitute.
7, the compound preparation facilities of film according to claim 5, it is opposite to it is characterized in that controlled sputtering source adjacent in closed loop magnetic field (3) and/or vacuum cathode arc evaporation source (4) point to the inner field pole polarity of vacuum cavity (2), only has the inner field pole polar orientation of the sensing vacuum cavity (2) of the adjacent controlled sputtering source (3) at a place and/or vacuum cathode arc evaporation source (4) identical in the semiclosed magnetic field of open loop.
8, the compound preparation facilities of film according to claim 5 is characterized in that high pressure work rest (5) is arranged in to be arranged in vacuum cavity (2) controlled sputtering source (3) and/or the closed loop magnetic field that constitutes, the magnetic field of vacuum cathode arc evaporation source (4) own or open loop place in the semiclosed magnetic field of open loop all around.
9, the compound preparation facilities of film according to claim 5 is characterized in that, high pressure work rest (5) apart from the nearest distance of vacuum cavity (2) wall greater than 60mm.
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| CNB2004100605301A CN100513634C (en) | 2004-09-22 | 2004-09-22 | Composite thin film preparation and preparing apparatus |
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| CNB2004100605301A CN100513634C (en) | 2004-09-22 | 2004-09-22 | Composite thin film preparation and preparing apparatus |
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| CN100513634C CN100513634C (en) | 2009-07-15 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1995445B (en) * | 2006-12-29 | 2010-08-11 | 友达光电股份有限公司 | Vacuum evaporation source device of vacuum evaporation machine and its vacuum evaporation method |
| WO2011116495A1 (en) * | 2010-03-24 | 2011-09-29 | 中国地质大学（北京） | Hybrid vacuum deposition device |
| CN101570849B (en) * | 2009-05-08 | 2012-02-01 | 四川大学 | Method for preparing hard coating of tool and mould by binary evaporation source |
| CN102570338A (en) * | 2010-12-30 | 2012-07-11 | 通用电气公司 | Device and method for circuit protection |
| CN103122450A (en) * | 2011-11-21 | 2013-05-29 | 鸿富锦精密工业（深圳）有限公司 | Ionization device and coating device applying same |
-
2004
- 2004-09-22 CN CNB2004100605301A patent/CN100513634C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1995445B (en) * | 2006-12-29 | 2010-08-11 | 友达光电股份有限公司 | Vacuum evaporation source device of vacuum evaporation machine and its vacuum evaporation method |
| CN101570849B (en) * | 2009-05-08 | 2012-02-01 | 四川大学 | Method for preparing hard coating of tool and mould by binary evaporation source |
| WO2011116495A1 (en) * | 2010-03-24 | 2011-09-29 | 中国地质大学（北京） | Hybrid vacuum deposition device |
| CN102570338A (en) * | 2010-12-30 | 2012-07-11 | 通用电气公司 | Device and method for circuit protection |
| CN102570338B (en) * | 2010-12-30 | 2015-12-02 | 通用电气公司 | For the apparatus and method of circuit protection |
| CN103122450A (en) * | 2011-11-21 | 2013-05-29 | 鸿富锦精密工业（深圳）有限公司 | Ionization device and coating device applying same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100513634C (en) | 2009-07-15 |
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