CN1607645A - Method for forming silicon extended layer - Google Patents
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- CN1607645A CN1607645A CN 200310115692 CN200310115692A CN1607645A CN 1607645 A CN1607645 A CN 1607645A CN 200310115692 CN200310115692 CN 200310115692 CN 200310115692 A CN200310115692 A CN 200310115692A CN 1607645 A CN1607645 A CN 1607645A
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Abstract
A method for forming a silicon epitaxial layer on a semiconductor base of a processed base plated includes a pressure reduction process for reducing pressure in the process chamber containing the processed base plate, leading in a filming gas containing silane to the process chamber and growing silicon epitaxial layer in gas phase on the semiconductor base layer including HCl process and H heat process. In the HC1 process, a first pre-processed gas containing HC1 gas is led into the chamber to process the environment in it, a second pre-process gas containing H is led into the chamber to process the semiconductor base surface.
Description
Technical field
The present invention relates to the formation method of silicon epitaxy layer.
Technical background
As the method for making silicon epitaxial wafer (being designated hereinafter simply as epitaxial wafer), be included in the method for vapor phase growth silicon epitaxy layer (being designated hereinafter simply as epitaxial loayer) on the first type surface of silicon single crystal substrate (being designated hereinafter simply as silicon substrate).For example, utilize longitudinal type low pressure chemical vapor deposition device under the hot wall mode, in this reaction vessel (reative cell), be set at (comparing) lower temperature (for example 600～1000 ℃) and low-pressure state with 1100 ℃ of scopes of temperature conditions of main flow.In reaction vessel, supply with the silicon unstrpped gas of silane gas, dichlorosilane gas under this state, carry out the vapor phase growth (hereinafter referred to as low-temperature epitaxy growth) of silicon epitaxy layer.
Under the situation of this low-temperature epitaxy growth because the cause of low temperature, utilize heating can suppress from silicon substrate take place to epitaxial loayer impurity to outdiffusion.And, obtain rapid property change in resistance (or variation of impurity concentration) better in substrate and epitaxial layer interface.In addition, the speed of growth of epitaxial loayer is slow (comparing with the situation of high temperature), can load multi-disc silicon substrate (for example 25～100 scope) on respect to a so-called boat, carries out a vapor phase growth, and productivity is very good.
But the said method according to people such as present inventor propose utilizes the longitudinal type low pressure chemical vapor deposition device of hot wall mode to carry out under the situation of low-temperature epitaxy growth, the phenomenon that the vaporific level of the epitaxial loayer that can occur growing (degree that the surface is fallen into disuse) increases.
Summary of the invention
In order to address the above problem, the purpose of this invention is to provide a kind of method that forms the good silicon epitaxy layer of surface state.
According to viewpoint of the present invention, a kind of method that forms silicon epitaxy layer in process chamber, on the semiconductor base layer of processed substrate is provided, this method comprises:
The decompression operation that in holding the above-mentioned process chamber of above-mentioned processed substrate, reduces pressure;
After above-mentioned decompression operation, in above-mentioned process chamber, import the gas of the 1st pretreatment gas that contains hydrogen chloride gas, adopt the 1st pretreatment gas, the hydrogen chloride treatment process that gas in the above-mentioned process chamber is handled, the above-mentioned processing indoor environment temperature of above-mentioned hydrogen chloride treatment process is set at 500～800 ℃ and pressure and is set at the 1st decompression pressure, and
After above-mentioned decompression operation, in above-mentioned process chamber, import the gas of the 2nd pretreatment gas that contains hydrogen, utilize above-mentioned the 2nd pretreatment gas to above-mentioned semiconductor base layer surface-treated hydrogen heat treatment step, the temperature of the environment in the above-mentioned process chamber of above-mentioned hydrogen heat treatment step is set at and is higher than 800 ℃ and pressure and sets the 2nd decompression pressure, and
After above-mentioned hydrogen chloride treatment process and above-mentioned hydrogen treatment process, in above-mentioned process chamber, import the film forming gas that contains silane gas, the vapor phase growth operation of vapor phase growth silicon epitaxy layer on above-mentioned semi-conductive basalis, and above-mentioned processing indoor environment temperature is set at film-forming temperature and pressure is set at decompression pressure in above-mentioned vapor phase growth operation.
In above-mentioned hydrogen chloride treatment process, the concentration of the hydrogen chloride of above-mentioned processing indoor environment is 0.5～20vol%.Above-mentioned the 1st decompression pressure is set at 0.1～10Torr.
And, in optimal way, the formation method of above-mentioned silicon epitaxy layer comprises: state process chamber and constitute to hold a plurality of processed substrates at the stacked state in upper and lower settings interval, environment in the above-mentioned process chamber is by the heater heats of configuration around the above-mentioned process chamber, in above-mentioned hydrogen chloride treatment process, handle above-mentioned a plurality of processed substrate in above-mentioned hydrogen heat treatment process and the above-mentioned vapor phase growth operation together.
Description of drawings
Fig. 1 is the epitaxially growing equipment that shows according to the embodiment of the present invention, the profile of the longitudinal type low pressure chemical vapor deposition device pattern of hot wall mode.
Fig. 2 is each specification figure according to the manufacture method of the silicon epitaxial wafer of the 1st execution mode of the present invention.
Fig. 3 A, B, C are the figure that shows the surperficial vaporific level (haze level) of silicon epitaxy layer, and the condition that these hydrogen chloride are handled is different.
Fig. 4 shows the chart of the concentration of carbon of locating with respect to the surface of 3 formed silicon epitaxy layers of method of Fig. 3 A, B, C on every side.
The figure of the vaporific level on the surface of Fig. 5 A, B demonstration silicon epitaxy layer, the condition of these vapor phase growths is different.
Fig. 6 is each specification figure about the silicon epitaxial wafer manufacture method of the 2nd execution mode of the present invention.
Fig. 7 is each specification figure about the silicon epitaxial wafer manufacture method of the present invention's the 3rd execution mode.
Fig. 8 is each specification figure about the silicon epitaxial wafer manufacture method of the present invention's the 4th execution mode.
Embodiment
In development process of the present invention, people such as present inventor studied about the longitudinal type low pressure chemical vapor deposition device that adopts the hot wall mode carry out under the situation of low-temperature epitaxy growth, vaporific level (degree that the surface is fallen into disuse) cause of increased of the epitaxial loayer of growth.From following described its result that learns.
In vapor phase growth, become environment under low pressure in order to make in the reaction vessel (process chamber), for example, adopt as pumps such as oily diffusion types the gas in the abstraction reaction container.For this reason, will in the blast pipe of configuration pump, (as the raw material of pump oil) there be a lot of carbon compounds that swims.But, under environment under low pressure, with compare under the atmospheric pressure environment, in order to reduce nuisance (molecular number), will improve the mobility of molecule, make the carbon compound reverse flow easily in reaction vessel (being called oil refluxes) in the blast pipe.Be subjected to the reflux influence of (オ イ Le バ Star Network) etc. of this oil, in reaction vessel, will have carbon compound.In addition, in reaction vessel during loaded with wafers, wafer in outside adsorbed organic matter of reaction vessel such as air body organic substance and since wafer clean bad generation organic substance, will enter in the reaction vessel.In fact, if there is carbon compound in reaction vessel, this vapor phase growth just is easy to produce vaporific (haze) in the epi-layer surface that produces.
Supply with hydrogen chloride gas in reaction vessel, then the adhesion of carbon compound weakens and is decomposed into gas easily, and carbon compound is as causing vaporific generation reason.In a word, handle, the carbon compound in the reaction vessel is aerified, just make and get rid of (exhaust) easily in the reaction vessel and become possibility by in reaction vessel, implementing hydrogen chloride.Therefore, handle, make and prepare out to suit that the clean environment of vapor phase growth becomes possibility in reaction vessel by implementing hydrogen chloride.
In addition, when moving into processed substrate in the reaction vessel, for example at the silicon single crystal substrate surface, there is autoxidation in the semiconductor base layer on the processed substrate.If hydrogen supply heats reaction vessel interior simultaneously in reaction vessel, hydrogen is removed natural oxide film so, just can form the no shielding status of suitable vapor phase growth on the semiconductor base layer surface.
That is, at first, by implementing the environment in the hydrogen chloride processing ready reaction container.Then, handle the state that forms suitable vapor phase growth on the semiconductor base layer surface by implementing hydrogen heat.Subsequently, use the environment of such preparation, under suitable temperature conditions, implement vapor phase growth.According to the method, even low temperature, also can form the surface and fall into disuse minimizing, silicon epitaxy layer in apparent good order and condition.
Embodiments of the present invention according to this knowledge composition are described with reference to the accompanying drawings.
Fig. 1 shows the forward profile as the epitaxially growing equipment of the longitudinal type low pressure chemical vapor deposition device pattern with hot wall mode of embodiments of the present invention.As shown in Figure 1, this longitudinal type low pressure chemical vapor deposition device 1 has the reaction vessel (reative cell) 2 of quartz for example etc., in order to handle gas in reaction vessel 2, makes supply unit GS coupled by supply pipe 3.Be set at the exhaust decompression state in the reaction vessel 2 in order to make in reaction vessel 2, exhaust portion ES (containing vacuum pump etc.) is coupled by blast pipe 4.Around reaction vessel 2, in order to heat the environment in the reaction vessel 2, configuration heater 5.
When in reaction vessel 2, handling semiconductor (being called silicon single crystal here) substrate W, make it remain under the level and be piled up in interval mutually on the wafer boat (maintenance tool) 10.Boat 10 constitutes and can carry multi-disc (for example about 25～100) substrate W.Boat 10 relies on driving mechanism 6 to drive rotation around vertical axis in processing.
As shown in Figure 1, show boat 10 states of configuration (lift-launch) multi-disc silicon substrate W in reaction vessel 2.But, in Fig. 1, in order to simplify, the total quantity of record silicon substrate W seldom and in silicon substrate W a symbolically go out the silicon substrate W of epimere and hypomere.
Secondly, the formation method of the silicon epitaxy layer of the embodiment of the present invention of using the longitudinal type low pressure chemical vapor deposition device 1 that as above constitutes is described.And, here, described on the first type surface of silicon single crystal substrate (semiconductor base layer) manufacture method of vapor phase growth silicon epitaxial wafer put down in writing as an example of silicon epitaxy layer formation method.The key diagram of each operation of the silicon epitaxial wafer manufacture method of shown in Figure 2 is the 1st execution mode of the present invention.Fig. 2 shows the gas through being imported in temperature in the reaction vessel of pairing enforcement operation, each operation and the respective reaction container in time.
The manufacture method of＜silicon epitaxial wafer 〉
At first, silicon substrate W is moved in the reaction vessel 2.That is, the boat 10 that will carry a plurality of silicon substrate W is in advance moved in the reaction vessel 2 (operation S1 (moving into operation)).And, in this stage, will be by supply pipe 3 as the N of protective gas
2Gas imports in the reaction vessel 2.
Subsequently, stop in reaction vessel 2, to import N
2Gas starts vacuum pump on the other hand.Thus, decompression is for example 1mmTorr (about 0.13Pa) (operation S2 (decompression operation)) in the reaction vessel 2.
Subsequently, in reaction vessel 2, import H
2In the time of gas, by 2 heating of 5 pairs of reaction vessels of heater.Thus, the ambient temperature that makes operation under the conduct in the reaction vessel 2 implement the temperature conditions that hydrogen chloride handles heat up (operation S3 (heating process)).
Subsequently, in reaction vessel 2, keep implementing hydrogen chloride and handling (operation S4) by the temperature after the operation S3 intensification.At this moment, in reaction vessel 2, import the 1st pretreatment gas contain hydrogen chloride gas (HCl), the importing time (for example more than 5 minutes, in 30 minutes, particularly, as about 10 minutes).At this moment, still continue to supply with H
2Gas.Like this, H
2Gas just has the function as HCl gas carrier gas and diluent gas, in the entire scope in from bottom to top the reaction vessel 2, provides HCl by the concentration of equilibrium.
Be subjected to the oil backflow to wait to influence in reaction vessel 2 and have carbon compound.Thus, owing in reaction vessel 2, import hydrogen chloride gas, make the carbon compound adhesion die down, and be easy to be decomposed.Because the carbon compound after decomposing thus is a gas, so discharge in reaction vessel easily.
In a word, owing to import the 1st pretreatment gas that contains hydrogen chloride gas in reaction vessel 2, make that the carbon compound in the reaction vessel 2 decomposes, removing (exhaust) easily becomes possibility.Thus, can prepare out the reaction vessel that cleans 2 of the environment of suitable vapor phase growth.
And in hydrogen chloride was handled, the temperature of environment was 500～800 ℃ in the reaction vessel 2, is preferably 700～800 ℃, for example is set at about 700 ℃.This treatment temperature is less than 500 ℃ the time, and hydrogen chloride can not fully decompose removed carbon compound at short notice.If this temperature surpasses 800 ℃, silicon substrate W surface will be corroded, and produces vaporific.
In addition, in hydrogen chloride was handled, the hydrogen cloride concentration of environment was 0.5～20vol% in the reaction vessel 2, is preferably set to 1～5vol%.And in hydrogen chloride was handled, the decompression pressure in the reaction vessel 2 was 0.1～10Torr, is preferably set to 0.1～2Torr.
Subsequently, stop the importing of first pretreatment gas on the one hand, increase the output of heater 5.Thus, make that the ambient temperature intensification (operation S5 (heating process)) in the reaction vessel 2 is that operation is implemented the heat treated temperature conditions of hydrogen down.
Subsequently, in reaction vessel 2, keep implementing hydrogen heat and handling (operation S6) by the temperature after the operation S5 intensification.At this moment, importing contains hydrogen (H in reaction vessel 2
2) the 2nd pretreatment gas, the importing time (for example 15～120 minutes, particularly as about 30 minutes).And, to operation S6, continue to keep H from operation S3 (heating process)
2The supply of gas.
Carry out this hydrogen heat and handle, silicon substrate W is just handled (hydrogen wears out) by hydrogen heat in hydrogen environment.Thus, the lip-deep natural oxide film of silicon substrate W is removed, and (becoming no shielding status) exposed on this surface.
And in hydrogen heat was handled, the ambient temperature in the reaction vessel 2 was 800～1100 ℃, is preferably 950～1050 ℃, for example is set at about 1050 ℃.This treatment temperature is not during to 800 ℃, and hydrogen can not make natural oxide film fully aging at short notice.If this temperature surpasses 1100 ℃, just be easy to the fault defective takes place, produce more fault defective.
Also have, in hydrogen heat was handled, the hydrogen concentration of the environment in the reaction vessel 2 approximately was 100vol%, set SiH
4, impurity concentrations such as HCl, HF are less than 0.1vol%.And in hydrogen heat was handled, the decompression pressure in the reaction vessel 2 was 0.1～20Torr, is preferably set to 2～8Torr.
Subsequently, stop the importing of the 2nd pretreatment gas on the one hand, reduce the output of heater 5.Thus, make in the reaction vessel 2 the ambient temperatures cooling implement the temperature conditions (operation S7 (cooling process)) of vapor phase growth for operation down.
Subsequently, in reaction vessel 2, keep implementing vapor phase growth (operation S8) by the temperature after the operation S7 cooling.At this moment, in reaction vessel 2, import and contain silane gas (SiH by the time that sets (for example 20～60 minutes) particularly as about 40 minutes
4) film forming gas.At this moment, continue to supply with same as before H
2Gas.And, begin till operation S8, to continue to keep H from operation S3 (heating process)
2The supply of gas.Because the supply of film forming gas, on silicon substrate W first type surface, the vapor phase growth silicon epitaxy layer produces silicon epitaxial wafer.
At this moment, handle, in reaction vessel 2, remove carbon compound by original hydrogen chloride.In a word, handle by hydrogen heat, silicon substrate W first type surface becomes unsheltered state.And the temperature conditions of implementing this vapor phase growth is the suitable condition that inhibition surface is as described later fallen into disuse.Therefore, this vapor phase growth can form and make the surface fall into disuse minimizing, epitaxial loayer in apparent good order and condition.
And in vapor phase growth, the temperature of environment is 550～750 ℃ in the reaction vessel 2, is preferably 550～700 ℃, for example is set at 660 ℃.Also have, in vapor phase growth, the decompression pressure in the reaction vessel 2 is 0.1～10Torr (torr), is preferably 0.1～0.2Torr.
When using silane gas, this treatment temperature adopts CVD method vapor phase growth silicon epitaxy layer to have difficulties during less than 550 ℃.If this temperature surpasses 750 ℃, silane gas thermal decomposition tempestuously produces a lot of particulates in the gas phase.
Subsequently, stop on the one hand in reaction vessel 2, importing silane gas, reduce the output of heater 5.Thus, ambient temperature in the reaction vessel 2 is implemented the temperature (for example 400 ℃) (operation S9 (cooling process)) that cooling is taken out up to suitable silicon epitaxial wafer.
Subsequently, will import environment in the reaction vessel 2 from H
2Gas switches to N
2Gas.Also have, make in the reaction vessel 2 after the normal pressureizations (operation S10 (normal pressure operation)), for example each boat 10 takes out (operation S11 (taking-up operation)) with epitaxial wafer from reaction vessel 2.
In above-mentioned implementation process, utilize hydrogen chloride to handle, preparation makes the environment in the reaction vessel 2 that cleans in the reaction vessel 2.In addition, utilizing hydrogen heat to handle makes the surperficial vapor phase growth of silicon substrate W form suitable no shielding status.And, under suitable temperature conditions, carry out vapor phase growth.Thus, can produce the surface and fall into disuse minimizing, the silicon epitaxial wafer that surface state is good.
Fig. 3 A, B, C are the figure that shows the surperficial vaporific level of silicon epitaxy layer, and the condition that this hydrogen chloride is handled is different mutually.Fig. 3 A shows the method by above-mentioned the 1st execution mode, forms epitaxial loayer and carry out the situation that hydrogen chloride is handled under 700 ℃.Fig. 3 B shows the 400 ℃ of situations of carrying out the hydrogen chloride processing, forming epitaxial loayer by the method for above-mentioned the 1st execution mode that are selected in.Fig. 3 C shows to be selected in does not have the situation that forms epitaxial loayer under the hydrogen chloride processing, by the method for above-mentioned the 1st execution mode.
In Fig. 3 A, B, C, in epi-layer surface, it is the above part of 1ppm that a grid mode illustrates vaporific level.Expression is by the size of the vaporific scattered light that causes with respect to the incident intensity comparison.When incident intensity 1 pairing intensity was a millionth scattered light, the size of this scattered light was represented with 1ppm.
Shown in Fig. 3 C, do not carry out hydrogen chloride and handle and the epitaxial loayer of formation, worsen in the vaporific level of its marginal surface part.
Shown in Fig. 3 B, under 400 ℃, carry out hydrogen chloride and handle the epitaxial loayer that forms, can see that with the situation of not carrying out the hydrogen chloride processing improvement is relatively arranged.But, still worsen in the vaporific level of its marginal surface part.In a word, when carrying out the hydrogen chloride processing for 400 ℃, the cleaningization in the reaction vessel 2 is insufficient.
In contrast, as shown in Figure 3A, carry out hydrogen chloride at 700 ℃ and handle the epitaxial loayer that forms, its surface does not find that vaporific level is the above part of 1ppm.In a word, when carrying out the hydrogen chloride processing for 700 ℃, obtained the abundant cleaningization in the illustrated reaction vessel 2.
Fig. 4 shows the chart at the concentration of carbon of the silicon epitaxy layer marginal surface portion that forms with these three kinds of methods.As shown in Figure 4, when carrying out under 700 ℃ under the situation that hydrogen chloride handle to make, also become minimum at the concentration of carbon of epi-layer surface edge part.
That Fig. 5 A, B represent is the figure of the vaporific level in silicon epitaxy layer surface, and their Vapor Growth Conditions is different.Fig. 5 A shows the epitaxial loayer that utilizes above-mentioned the 1st execution mode method to form, and at this moment, uses silane gas to carry out vapor phase growth under 660 ℃.Fig. 5 B shows the epitaxial loayer that utilizes above-mentioned the 1st execution mode method to form, and at this moment, uses silane gas to carry out vapor phase growth under 700 ℃.
Shown in Fig. 5 B, when carrying out vapor phase growth under 700 ℃, it is the vaporific of 2ppm level that the whole surface distributed of epitaxial loayer thickness.On the one hand, shown in Fig. 5 A, when carrying out vapor phase growth under 660 ℃, the vaporific level of epi-layer surface is about 0.2ppm.In a word, when using silane gas,, preferably under less than 700 ℃, carry out vapor phase growth in order to suppress falling into disuse of epi-layer surface as silicon unstrpped gas.Thus, can form the surface and fall into disuse minimizing, silicon epitaxy layer in apparent good order and condition.
And it also is good using silane gas to carry out vapor phase growth under 700～750 ℃ temperature.Because for example, the level that produces on the epitaxial wafer that produces under such temperature conditions is vaporific can to improve by grinding.
＜the 2 execution mode 〉
In the above-described embodiment, when carrying out the hydrogen chloride processing, make the temperature in the reaction vessel 2 keep weighing apparatus fixed.Yet for example, in the temperature-rise period after in silicon substrate W moves into reaction vessel 2, it also is good that beginning hydrogen chloride is handled.Fig. 6 is based on such viewpoint, to the key diagram of each operation of the silicon epitaxial wafer manufacture method of the 2nd execution mode of the present invention.Fig. 6 shows the gas that is imported with in the operation of implementing with respect to effluxion, temperature in each operation in the reaction vessel and the corresponding reaction vessel.
In the 2nd execution mode, for example, as shown in Figure 6, replace being illustrated at operation S3, S4, the S5 of Fig. 2 with operation S21.That is, operation S21 is as moving into reaction vessel 2 and to the heating process after reaction vessel 2 reduced pressure treatment from silicon substrate W.In the S21 operation, owing to utilize heater 5 heating, making reaction vessel 2 interior temperature heat up is that operation is implemented the heat treated temperature conditions of hydrogen down.At this moment the target temperature of Sheng Wening is 800～1100 ℃, is preferably 950～1050 ℃, for example is set in about 1050 ℃.
In the 2nd execution mode method, in this temperature-rise period, carry out hydrogen chloride and handle.That is, when the temperature after heating up is 500～800 ℃, to reaction vessel 2 in, import the 1st pretreatment gas that contains hydrogen chloride gas in reaction vessel 2, fix time (for example more than 5 minutes, in 30 minutes, particularly for example about 10 minutes).Thus, utilize the temperature conditions in the temperature-rise period, carry out hydrogen chloride and handle.
And, in the 2nd execution mode, having replaced operation S3, S4, S5 with operation S21, all the other each operations are identical with each operation of the 1st execution mode (Fig. 2).Therefore, omit the related description of other operation.
According to the 2nd execution mode, on the manufacturing time efficient of silicon epitaxial wafer, improved one deck.
＜the 3 execution mode 〉
In the 1st and the 2nd execution mode, hydrogen chloride is handled the back and is implemented the hydrogen heat processing.Yet, in a word, after hydrogen heat is handled, carry out hydrogen chloride processing (processing of the 2nd hydrogen chloride) like this and also be fine.Fig. 7 is based on such viewpoint, to the key diagram of each operation of the silicon epitaxial wafer manufacture method of the 3rd execution mode of the present invention.Fig. 7 shows the gas that is imported in operation, the temperature in each operation in the reaction vessel and the respective reaction container of implementing with respect to effluxion.
In the 3rd execution mode, for example, as shown in Figure 7, carry out reducing output after hydrogen heat handles (operation S6) to heater 5.Thus, make greenhouse coolings (operation S31) in the reaction vessel 2 be the temperature conditions implementing hydrogen chloride and handle (500～800 ℃, be preferably 700～800 ℃, for example be set in about 700 ℃).
Under the state that keeps this temperature conditions, carry out the 2nd hydrogen chloride and handle (operation S32).At this moment, in reaction vessel 2, import the processing gas contain hydrogen chloride gas, institute fix time (for example more than 5 minutes, in 30 minutes, particularly for example about 10 minutes).
After this, make in the reaction vessel 2 greenhouse coolings (operation S33 (cooling process)) implement the temperature conditions of vapor phase growth (550～750 ℃, be preferably 550～700 ℃, for example be set at 660 ℃) for operation down.And, in reaction vessel 2, keep utilizing and containing silane gas (SiH by the temperature after the operation S33 cooling
4) film forming gas carry out vapor phase growth (operation S8).
And, in the 3rd execution mode, having replaced operation S7 with operation S31, S32, S33, other each operation is identical with each operation of the 2nd execution mode (Fig. 6).Therefore, omit the related description of other operation.
According to the 3rd execution mode, to handle owing to before vapor phase growth, carry out hydrogen chloride always, reaction vessel 2 can access cleaningization preferably.
＜the 4 execution mode 〉
In the 1st to the 3rd execution mode, hydrogen chloride is handled the back and is implemented the hydrogen heat processing.But after hydrogen heat was handled, it also was good carrying out the hydrogen chloride processing like this.Fig. 8 is based on such viewpoint, to the key diagram of each operation of the silicon epitaxial wafer manufacture method of the 4th execution mode of the present invention.Fig. 8 shows the gas that is imported in operation, the temperature in each operation in the reaction vessel and the respective reaction container of implementing with respect to the time.
In the 4th execution mode, for example, as shown in Figure 8, replace the operation S21 explanation operation S41 on Fig. 7 below.That is, operation S41 is as moving into reaction vessel 2 from silicon substrate W and reaction vessel 2 being carried out heating process after the reduced pressure treatment.In the S41 operation, in reaction vessel 2, importing H
2The time, utilize heater 5 heating, making reaction vessel 2 interior temperature heat up is that operation is implemented the heat treated temperature conditions of hydrogen down.At this moment the target temperature of Sheng Wening is 800～1100 ℃, is preferably 950～1050 ℃, for example is set in about 1050 ℃.
And, in the 4th execution mode, having replaced operation S21 with operation S41, other each operation is identical with each operation of the 3rd execution mode (Fig. 7).Therefore, omit the related description of other operation.
In the 3rd and the 4th execution mode, when carrying out the hydrogen chloride processing after hydrogen heat is handled, the temperature in the reaction vessel 2 keep weighing apparatus fixed (for example: about 700 ℃).But for example, the heat treated temperature of hydrogen (for example about 950 ℃) play the temperature-fall period of the temperature (for example 660 ℃) of vapor phase growth in the reaction vessel 2, and it also is good carrying out that hydrogen chloride handles.At this moment, on the manufacturing time efficient of silicon epitaxial wafer, improved one deck.
In the 1st to the 4th execution mode, utilize longitudinal type low pressure chemical vapor deposition device 1 to handle.But the present invention also is applicable to and uses other device, forms the situation of silicon epitaxy layer as piece leaf formula low pressure chemical vapor deposition device.Also have, in the 1st to the 4th execution mode, show manufacture method as the silicon epitaxial wafer of the example of formation method of silicon epitaxy layer.But the present invention is applicable to the situation that forms silicon epitaxy layer in the manufacture process of semiconductor device.
Claims (11)
1, a kind of method that forms silicon epitaxy layer in process chamber, on the semiconductor-based end of processed substrate comprises:
The decompression operation that in holding the above-mentioned process chamber of above-mentioned processed substrate, reduces pressure,
After above-mentioned decompression operation, in above-mentioned process chamber, import the 1st pretreatment gas that contains hydrogen chloride gas, handle the hydrogen chloride treatment process of above-mentioned processing indoor environment with above-mentioned the 1st pretreatment gas, in above-mentioned hydrogen chloride treatment process, above-mentioned processing indoor environment temperature is set at 500～800 ℃, and pressure is set at the 1st decompression pressure
After the above-mentioned decompression operation, in above-mentioned process chamber, import the 2nd pretreatment gas that contains hydrogen, utilize above-mentioned the 2nd pretreatment gas to handle the hydrogen heat treatment process on the surface of above-mentioned semiconductor base layer, in above-mentioned hydrogen heat treatment process, above-mentioned processing indoor environment temperature is set at and is higher than 800 ℃, and pressure is set at the 2nd decompression pressure
After above-mentioned hydrogen chloride treatment process and the above-mentioned hydrogen heat treatment process, in above-mentioned process chamber, import the film forming gas that contains silane gas, the vapor phase growth operation of vapor phase growth silicon epitaxy layer on above-mentioned semiconductor base layer is set at above-mentioned processing indoor environment temperature film-forming temperature and pressure is set at decompression pressure in above-mentioned vapor phase growth operation.
2, according to the formation method of the silicon epitaxy layer described in the claim 1, wherein, above-mentioned silane gas is a monosilane gas, and above-mentioned film-forming temperature is 550～700 ℃.
3, according to the formation method of the silicon epitaxy layer described in the claim 1, wherein, above-mentioned semiconductor base layer is formed by silicon single crystal in fact.
4, according to the formation method of the silicon epitaxy layer described in the claim 1, wherein, in above-mentioned hydrogen chloride treatment process, the concentration of the hydrogen chloride of above-mentioned processing indoor environment is 0.5～20vol%.
5, according to the formation method of the silicon epitaxy layer described in the claim 1, wherein, above-mentioned the 1st decompression pressure is 0.1～10Torr.
6, according to the formation method of the silicon epitaxy layer described in the claim 1, wherein, in above-mentioned hydrogen heat treatment process, the concentration of the hydrogen of above-mentioned processing indoor environment is about 100vol%, and impurity is set at less than 1vol%.
7, according to the formation method of the silicon epitaxy layer described in the claim 1, wherein, above-mentioned the 2nd decompression pressure is 0.1～20Torr.
8, according to the formation method of the silicon epitaxy layer described in the claim 1, wherein, before above-mentioned hydrogen heat treatment process, carry out the processing of hydrogen chloride treatment process.
9, the formation method of the silicon epitaxy layer described in according to Claim 8 wherein, in making the above-mentioned processing indoor environment temperature-rise period that holds above-mentioned processed substrate, begins above-mentioned hydrogen chloride treatment process.
10, according to the formation method of the silicon epitaxy layer described in the claim 1, wherein, before above-mentioned hydrogen chloride treatment process, carry out the processing of above-mentioned hydrogen heat treatment process.
11, according to the formation method of the silicon epitaxy layer described in the claim 1, wherein, above-mentioned process chamber constitutes to hold a plurality of processed substrates at the stacked state in upper and lower settings interval, environment in the above-mentioned process chamber is by the heater heats of configuration around the above-mentioned process chamber, in above-mentioned hydrogen chloride treatment process, above-mentioned hydrogen heat treatment process and above-mentioned vapor phase growth operation, handle above-mentioned a plurality of processed substrate together.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108110088A (en) * | 2017-12-21 | 2018-06-01 | 苏州阿特斯阳光电力科技有限公司 | The low pressure diffusion technique of solar cell and the solar cell being prepared using it |
| CN110383425A (en) * | 2016-12-26 | 2019-10-25 | 胜高股份有限公司 | The manufacturing method of epitaxial silicon wafer |
| CN112002639A (en) * | 2020-07-21 | 2020-11-27 | 上海新昇半导体科技有限公司 | Epitaxial wafer manufacturing method and epitaxial wafer |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3292101B2 (en) * | 1997-07-18 | 2002-06-17 | 信越半導体株式会社 | Method for smoothing silicon single crystal substrate surface |
| US6346732B1 (en) * | 1999-05-14 | 2002-02-12 | Kabushiki Kaisha Toshiba | Semiconductor device with oxide mediated epitaxial layer |
| CN100342492C (en) * | 2003-03-14 | 2007-10-10 | 中国科学院上海微系统与信息技术研究所 | Preparation for silicon material on thick film insulative layers |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110383425A (en) * | 2016-12-26 | 2019-10-25 | 胜高股份有限公司 | The manufacturing method of epitaxial silicon wafer |
| CN110383425B (en) * | 2016-12-26 | 2022-10-04 | 胜高股份有限公司 | Method for manufacturing epitaxial silicon wafer |
| CN108110088A (en) * | 2017-12-21 | 2018-06-01 | 苏州阿特斯阳光电力科技有限公司 | The low pressure diffusion technique of solar cell and the solar cell being prepared using it |
| CN108110088B (en) * | 2017-12-21 | 2020-11-10 | 苏州阿特斯阳光电力科技有限公司 | Low-voltage diffusion process of solar cell and solar cell prepared by using low-voltage diffusion process |
| CN112002639A (en) * | 2020-07-21 | 2020-11-27 | 上海新昇半导体科技有限公司 | Epitaxial wafer manufacturing method and epitaxial wafer |
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| CN100401473C (en) | 2008-07-09 |
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