CN1605937A - Method for maintaining permissible level of microimage process - Google Patents
Method for maintaining permissible level of microimage process Download PDFInfo
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- CN1605937A CN1605937A CN 200310100087 CN200310100087A CN1605937A CN 1605937 A CN1605937 A CN 1605937A CN 200310100087 CN200310100087 CN 200310100087 CN 200310100087 A CN200310100087 A CN 200310100087A CN 1605937 A CN1605937 A CN 1605937A
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Abstract
The invention provides a method for maintaining permissible level of microimage process which consists of, first providing a substrate, then forming an anti-reflecting layer on the substrate surface, then forming a transparent protective coating onto the anti-reflecting layer, then forming a pattern optical resistance on the transparent protective coating surface, finally using the pattern optical resistance as shield screen for etching in turn the transparent protective coating, the anti-reflecting layer and the substrate.
Description
Technical field
The invention relates to the method for a kind of little shadow (lithography) processing procedure, and particularly relevant for a kind of method of stablizing the micro-photographing process permission when making photoresistance again.
Background technology
Little shadow technology is that the geometric configuration on the light shield is transferred to program on last photosensitive material (the being called photoresistance) film that is covered in semi-conductor chip, these pattern definitions each zone of integrated circuit, plant district, contact window, and wiring area or the like such as cloth.Little shadow can be described as in the whole manufacture of semiconductor, one of the most very important step, and it is concerning that can the circuit layout pattern verily be presented at semiconductor-based the end.
In the exposure manufacture process of little shadow technology, the light that part is not absorbed by photoresistance, to arrive the surface of substrate through photoresistance, and cause the reflection and the light wave of incident to produce the interference of constructive (constructive) and destructive (destructive), and form so-called standing wave.The formation of standing wave will make that the degree of photoresist layer exposure is inhomogeneous, so after developing, the side of photoresist layer will present corrugated, cause the change of photoresistance live width (line-width).In traditional micro-photographing process technology, solve the mode of Stationary Wave, normally be coated with an anti-reflecting layer in substrate, reflected by substrate, influence the degree of accuracy of photoresistance pattern in order to avoid little shadow irradiates light.At present, the silicon oxynitride material has been widely used in the photoresistance bottom, as bottom anti-reflection layer.
Increase along with semiconductor achievement intensity, the size of semiconductor subassembly is also dwindled thereupon, therefore, often need to form the patterning photoresistance of high breadth depth ratio (aspect ratio), for example: the photoresistance of tool L/S pattern (line/space pattern), with the specific region of definition integrated circuit, for example: shallow trench, contact hole ... or the like.
The breadth depth ratio of the photoresistance of tool L/S pattern is quite high, and the situation of avalanche takes place the patterning photoresistance that of developing easily, removes with ashing (ashing) so must handle the photoresistance that will collapse with oxygen plasma, makes new high breadth depth ratio photoresistance more again.
Yet the silicon oxynitride bottom anti-reflection layer just can influence its refractive index (refractive index in case run into the aqueous vapor invasion; N) with extinction coefficient (light extinction coefficient; K), especially the removal photoresistance step before making photoresistance again influences its n, k value easily.N, k value change, and the critical size of little shadow program, processing procedure permission all can change, and are unfavorable for controlling its stability.
In view of this, in order to address the above problem, fundamental purpose of the present invention is to provide a kind of method of keeping the micro-photographing process permission, can effectively control the stable of micro-photographing process.
Summary of the invention
One of purpose of the present invention is to keep the method for micro-photographing process permission, in order to controlling gold-tinted critical dimension (photo critical dimension; Photo CD).
Two of purpose of the present invention is to keep the method for micro-photographing process permission, can effectively avoid photoresistance to make the problem that photoresistance avalanche or line falling take place in (rework) back again.
The present invention is characterized in to utilize and set up a protective clear layer between patterning photoresist layer and anti-reflecting layer, its material for example is an oxide, and so, protective clear layer can provide sufficient protection by the antagonistic reflex layer.In general, anti-reflecting layer can be because the aqueous vapor invasion in 1. environment, 2. when the not good needs of patterning photoresistance making are made (rework) again, and causes its refractive index (refractive index; N) with extinction coefficient (light extinction coefficient; K) change.Therefore, can protect anti-reflecting layer according to protective clear layer of the present invention, make anti-reflecting layer n, the k value is neither changes, in order to the processing procedure permission (processwindow) of keeping little shadow.
For obtaining above-mentioned purpose, the present invention proposes a kind of method of keeping the micro-photographing process permission, and the step of the method mainly comprises:
At first, provide a substrate.Then, form an anti-reflecting layer in above-mentioned substrate surface.Then, form a protective clear layer in above-mentioned anti-reflecting layer surface.Next, form a patterning photoresistance in above-mentioned transparency protected laminar surface.At last, serve as the cover curtain with above-mentioned patterning photoresistance, the above-mentioned protective clear layer of etching in regular turn, above-mentioned anti-reflecting layer and above-mentioned substrate.
According to the present invention, the material of above-mentioned protective clear layer can be oxide, for example: boron-phosphorosilicate glass (boro-phspho silicate glass; BPSG), high-density electric slurry oxide silicon (highdensity plasma silicon oxide; HDP SiO2) or tetraethyl orthosilicate (tetraethylorthosilicate; TEOS).Wherein, the thickness of above-mentioned protective clear layer is roughly 90-110 .
As previously mentioned, above-mentioned bottom anti-reflection layer comprises silicon oxynitride (SiOxNy), and its thickness is roughly 100-300
As previously mentioned, the method that forms above-mentioned patterning photoresistance more comprises:
At first, be coated with a photoresistance in above-mentioned transparency protected laminar surface.Then, implement an exposure program, to define a pattern in above-mentioned photoresistance.At last, implement a developing programs, above-mentioned pattern is manifested, to form above-mentioned patterning photoresistance.
For obtaining above-mentioned purpose, the present invention need make in the micro-photographing process of photoresistance again applicable to when the photoresistance defectiveness, and therefore, the present invention proposes a kind of method of keeping the micro-photographing process permission, and the step of the method mainly comprises:
At first, provide a substrate.Then, form an anti-reflecting layer in above-mentioned substrate surface.Then, form a protective clear layer in above-mentioned anti-reflecting layer surface.Next, form a patterning defective photoresistance in above-mentioned transparency protected laminar surface.Then, remove above-mentioned patterning defective photoresistance.Then, form patterning recasting (rework) photoresistance in above-mentioned transparency protected laminar surface.At last, serve as the cover curtain with above-mentioned patterning recasting photoresistance, the above-mentioned protective clear layer of etching in regular turn, above-mentioned anti-reflecting layer and above-mentioned substrate.
Description of drawings
Fig. 1 to Fig. 8 is the processing procedure sectional view that shows according to an embodiment of the method for keeping the micro-photographing process permission of the present invention.
Symbol description:
The 100-substrate; The 102-anti-reflecting layer;
The 104-protective clear layer; The 106-resistance material;
106a-patterning photoresistance; 106b-patterning defective photoresistance;
The 108-photoresistance of remaking; 108a-patterning recasting photoresistance.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:
Below please cooperate processing procedure sectional view, illustrate according to of the present invention one preferable referring to figs. 1 to Fig. 8
Embodiment.
The method of keeping the micro-photographing process permission of the present invention can make the micro-photographing process that is applicable to various technical fields, and it is fixed that the characteristic dimensions of the anti-reflecting layer that is commonly used to improve micro-photographing process is kept steady, so that the easier control of the permission of micro-photographing process and keep certain.
At first, please refer to Fig. 1, provide a substrate 100, for example semiconductor substrate.Substrate 100 tops can form any required semiconductor subassembly, and for example MOS transistor, resistance, logic module etc., but herein for simplicity of illustration are only with 100 expressions of smooth substrate.In narration of the present invention, " substrate " speech is to comprise established assembly and the various coatings that cover on the wafer on the semiconductor crystal wafer; " substrate surface " speech is the superiors of being exposed that comprise semiconductor crystal wafer, for example silicon wafer surface, insulation course, plain conductor etc.
Then, for example utilize suitable depositional mode to form an anti-reflecting layer 102, for example chemical vapour deposition technique (chemical vapor deposition in substrate 100 surfaces; CVD), the material of anti-reflecting layer 102 is generally silicon oxynitride (SiOxNy), and its thickness is about 100-300 , in order to reduce multipath reflection and interference, can promote micro-photographing process permission (process window).
Then, please refer to Fig. 2, utilize suitable depositional mode to form a protective clear layer 104 again, for example chemical vapour deposition technique (chemical vapor deposition in anti-reflecting layer 102 surfaces; CVD).Because anti-reflecting layer 102 is easily because the influence of aqueous vapor in the environment causes its refractive index (refractive index; N) with extinction coefficient (light extinction coefficient; K) change, therefore, protective clear layer 104 according to the present invention can provide protection, prevents that anti-reflecting layer 102 from being invaded by aqueous vapor, to keep the stable of micro-photographing process permission.The material of protective clear layer 104 can be oxide, for example: boron-phosphorosilicate glass (boro-phspho silicateglass; BPSG), high-density electric slurry oxide silicon (high density plasma silicon oxide; HDP SiO2) or tetraethyl orthosilicate (tetraethylorthosilicate; TEOS), its thickness is approximately 90-110 .
Then, please refer to Fig. 3, for example utilize spin-coating method (spin coating) to form a resistance material 106 in protective clear layer 104 surfaces.Resistance material 106 can be organic material (organicmaterial), utilizes irradiate light, makes organic substance carry out light reaction (exposure) and the generation change of molecular structure, re-uses solvent and makes it video picture.The thickness of resistance material 106 is about 4000-6000 .
Then, please refer to Fig. 4, carry out a little shadow program, so that resistance material 106 patternings.Little shadow program be to utilize a light shield (not icon) with predetermined pattern, carry out exposure program earlier, the pattern definition that makes light shield is in resistance material 106, and then use appropriate solvent, carry out developing programs, the pattern of light shield is displayed, to form a patterning photoresistance 106a in resistance material 106.
Usually; utilize protective clear layer 104 protection anti-reflecting layers 102 of the present invention; can make anti-reflecting layer 102 that the effect that changes the micro-photographing process permission is provided, so the common profile of patterning photoresistance 106a of gained is good, favourable follow-up when carrying out etching program as etch mask.
Yet when if the depth of patterning photoresistance 106a is quite bigger than (aspect ratio), the situation of photoresistance avalanche takes place in patterning photoresistance 106a easily, produces a patterning defective photoresistance 106b, as shown in Figure 5.
Next, please refer to Fig. 6, for example utilize ashing method (ashing) or utilize an etchant solution, remove patterning defective photoresistance.At this moment, according in the past, usually the etchant solution of removing photoresistance is easy to react with anti-reflecting layer, make n, the k value of anti-reflecting layer change, therefore, the step of known removal defective photoresistance, follow-up micro-photographing process permission is changed, yet,, set up protective clear layer 104 in anti-reflecting layer 102 surfaces according to the present invention, in order to protection anti-reflecting layer 102, it is stable that n, the k value of anti-reflecting layer 102 are kept, and it is stable to impel follow-up micro-photographing process permission to keep, and benefits to control critical dimension (critical dimension; Photo CD).
Then, please refer to Fig. 7, make (rework) photoresistance again, for example utilize spin-coating method (spincoating) to form a recasting photoresistance 108 in protective clear layer 104 surfaces.Recasting photoresistance 108 can be organic material (organic material), and its thickness is about 4000-6000 .
Then, please refer to Fig. 8, carry out a little shadow program once more, so that recasting photoresistance 108 patternings.Little shadow program be to utilize a light shield (not icon) with predetermined pattern, carry out exposure program, the pattern definition that makes light shield is in recasting photoresistance 108, and then use appropriate solvent, carry out developing programs, the pattern of light shield is displayed, to form patterning recasting photoresistance 108a in recasting photoresistance 108.What deserves to be mentioned is; according to the present invention; after setting up protective clear layer 104; again the patterning recasting photoresistance 108a that makes the photoresistance gained can have a little small footing (footing); can prevent effectively that patterning recasting photoresistance 108a from avalanche taking place; but the pattern of footing is little, can not influence the profile of subsequent etch.
Thus, just can lose section's program, the patterning recasting photoresistance 108a that regains just can be as etch mask.
Claims (23)
1. method of keeping micro-photographing process permission (process window) comprises:
One substrate is provided;
Form an anti-reflecting layer in above-mentioned substrate surface;
Form a protective clear layer in above-mentioned anti-reflecting layer surface;
Form a patterning photoresistance in above-mentioned transparency protected laminar surface; And
With above-mentioned patterning photoresistance is the cover curtain, the above-mentioned protective clear layer of etching in regular turn, above-mentioned anti-reflecting layer and above-mentioned substrate.
2. the method for keeping the micro-photographing process permission according to claim 1, wherein above-mentioned protective clear layer is an oxide.
3. the method for keeping the micro-photographing process permission according to claim 2, wherein above-mentioned oxide are boron-phosphorosilicate glass (boro-phspho silicate glass; BPSG), high-density electric slurry oxide silicon (high density plasma silicon oxide; HDP SiO2) or tetraethyl orthosilicate (tetraethylorthosilicate; TEOS).
4. the method for keeping the micro-photographing process permission according to claim 1, wherein the thickness of above-mentioned protective clear layer is roughly 90-110 .
5. the method for keeping the micro-photographing process permission according to claim 1, wherein above-mentioned bottom anti-reflection layer comprises silicon oxynitride (SiOxNy).
6. the method for keeping the micro-photographing process permission according to claim 1, wherein the thickness of above-mentioned bottom anti-reflection layer is roughly 100-300 .
7. the method for keeping the micro-photographing process permission according to claim 1, the method that wherein forms above-mentioned patterning photoresistance comprises:
Be coated with a photoresistance in above-mentioned transparency protected laminar surface;
Implement an exposure program, to define a pattern in above-mentioned photoresistance; And
Implement a developing programs, above-mentioned pattern is manifested, to form above-mentioned patterning photoresistance.
8. method of keeping micro-photographing process permission (process window) comprises:
One substrate is provided;
Form an anti-reflecting layer in above-mentioned substrate surface;
Form an oxide layer in above-mentioned anti-reflecting layer surface;
Form a patterning photoresistance in above-mentioned transparency protected laminar surface; And
With above-mentioned patterning photoresistance is the cover curtain, the above-mentioned protective clear layer of etching in regular turn, above-mentioned anti-reflecting layer and above-mentioned substrate.
9. the method for keeping the micro-photographing process permission according to claim 8, wherein above-mentioned oxide layer comprise boron-phosphorosilicate glass (boro-phspho silicate glass; BPSG), high-density electric slurry oxide silicon (high density plasma silicon oxide; HDP SiO2) or tetraethyl orthosilicate (tetraethylorthosilicate; TEOS).
10. the method for keeping the micro-photographing process permission according to claim 8, wherein above-mentioned thickness of oxide layer is roughly 90-110 .
11. the method for keeping the micro-photographing process permission according to claim 8, wherein above-mentioned bottom anti-reflection layer comprises silicon oxynitride (SiOxNy).
12. the method for keeping the micro-photographing process permission according to claim 8, wherein the thickness of above-mentioned bottom anti-reflection layer is roughly 200-400 .
13. the method for keeping the micro-photographing process permission according to claim 8, the method that wherein forms above-mentioned patterning photoresistance comprises:
Be coated with a photoresistance in above-mentioned transparency protected laminar surface;
Implement an exposure program, to define a pattern in above-mentioned photoresistance; And
Implement a developing programs, above-mentioned pattern is manifested, to form above-mentioned patterning photoresistance.
14. a method of keeping micro-photographing process permission (process window) comprises:
One substrate is provided;
Form an anti-reflecting layer in above-mentioned substrate surface;
Form a protective clear layer in above-mentioned anti-reflecting layer surface;
Form a patterning defective photoresistance in above-mentioned transparency protected laminar surface;
Remove above-mentioned patterning defective photoresistance;
Form patterning recasting (rework) photoresistance in above-mentioned transparency protected laminar surface; And
With above-mentioned patterning recasting photoresistance is the cover curtain, the above-mentioned protective clear layer of etching in regular turn, above-mentioned anti-reflecting layer and above-mentioned substrate.
15. the method for keeping the micro-photographing process permission according to claim 14, wherein above-mentioned protective clear layer is an oxide.
16. the method for keeping the micro-photographing process permission according to claim 15, wherein above-mentioned oxide are boron-phosphorosilicate glass (boro-phspho silicate glass; BPSG), high-density electric slurry oxide silicon (high density plasma silicon oxide; HDP SiO2) or tetraethyl orthosilicate (tetraethylorthosilicate; TEOS).
17. the method for keeping the micro-photographing process permission according to claim 14, wherein the thickness of above-mentioned protective clear layer is roughly 90-110 .
18. the method for keeping the micro-photographing process permission according to claim 14, wherein above-mentioned bottom anti-reflection layer comprises silicon oxynitride (SiOxNy).
19. the method for keeping the micro-photographing process permission according to claim 14, wherein the thickness of above-mentioned bottom anti-reflection layer is roughly 200-400 .
20. the method for keeping the micro-photographing process permission according to claim 14, the method that wherein forms above-mentioned patterning defective photoresistance comprises:
Be coated with one first photoresistance in above-mentioned transparency protected laminar surface;
Implement an exposure program, to define a pattern in above-mentioned first photoresistance; And
Implement a developing programs, above-mentioned pattern is manifested, to form above-mentioned patterning defective photoresistance.
21. the method for keeping the micro-photographing process permission according to claim 14, the method that wherein forms above-mentioned patterning recasting photoresistance comprises:
Be coated with one second photoresistance in above-mentioned transparency protected laminar surface;
Implement an exposure program, to define a pattern in above-mentioned second photoresistance; And
Implement a developing programs, above-mentioned pattern is manifested, to form above-mentioned patterning recasting photoresistance.
22. the method for keeping the micro-photographing process permission according to claim 14, wherein above-mentioned patterning defective photoresistance are to utilize ashing method (ashing) to remove.
23. the method for keeping the micro-photographing process permission according to claim 14, wherein above-mentioned patterning defective photoresistance are to utilize an etchant solution to remove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310100087 CN1605937A (en) | 2003-10-08 | 2003-10-08 | Method for maintaining permissible level of microimage process |
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| CN 200310100087 CN1605937A (en) | 2003-10-08 | 2003-10-08 | Method for maintaining permissible level of microimage process |
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| CN1605937A true CN1605937A (en) | 2005-04-13 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101144972B (en) * | 2006-09-15 | 2011-11-16 | 豪雅株式会社 | Mask blank and mask |
| CN103048875A (en) * | 2012-12-27 | 2013-04-17 | 上海集成电路研发中心有限公司 | Photomask structure and manufacturing method thereof |
-
2003
- 2003-10-08 CN CN 200310100087 patent/CN1605937A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101144972B (en) * | 2006-09-15 | 2011-11-16 | 豪雅株式会社 | Mask blank and mask |
| CN103048875A (en) * | 2012-12-27 | 2013-04-17 | 上海集成电路研发中心有限公司 | Photomask structure and manufacturing method thereof |
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