CN1601949B - Dielectric-Layer type dense wavelength division multi plexer filter - Google Patents

Dielectric-Layer type dense wavelength division multi plexer filter Download PDF

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Publication number
CN1601949B
CN1601949B CN031574912A CN03157491A CN1601949B CN 1601949 B CN1601949 B CN 1601949B CN 031574912 A CN031574912 A CN 031574912A CN 03157491 A CN03157491 A CN 03157491A CN 1601949 B CN1601949 B CN 1601949B
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air
filter
medium
division multiplexer
sub
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CN1601949A (en
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熊胜明
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Institute of Optics and Electronics of CAS
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Institute of Optics and Electronics of CAS
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Abstract

Structure of the WDM filter is as Sub/(HL) N1H8L(HL) 8HL(HL) N2H6L(HL) 9HL(HL) 9H4L(HL) 9HL(HL) 8H2L(HL) 8H0.404H1.21 L/Air, where H is Ta2O5, L is SiO2, film coefficient of dielectric layer N1=8-11,and N2= 9-11. another structure in the invention is as Sub/(HL) N3H6L(HL) 8HL(HL) 9H6L(HL) N4HL(HL) 9H4L(HL) 9HL(HL) 8H2L(HL) 8H0.404H1.21 L/Air, where H is Ta2O5, L is SiO2, film coefficient of dielectric layer N3=8-12, and N4= 9-11. the invention provides WDM filter with fine performance in 50GHz channel spacing by reasonable structural design and controlling thickness of film correctly. Meanwhile.

Description

A kind of medium membranous type dense wave division multiplexer filter
Technical field
The present invention relates to a kind of dense wave division multiplexer filter, relate in particular to a kind of improvement of medium membranous type dense wave division multiplexer filter construction.
Background technology
Dense wave division multiplexer spare is the core component of wavelength-division multiplex system, and its characteristic quality has determined the performance of whole system to a great extent.According to the manufacture method difference, dense wave division multiplexer spare can be divided into several types, and medium membranous type dense wave division multiplexer is wherein a kind of.Such dense wave division multiplexer utilizes the filter action of multilayer film to carry out multiplexing and demultiplexing, so the dielectric film filter is its most basic element.The passband of filter and resistance band have determined the wave-length coverage of multipling channel, promptly influence smallest passage at interval, and smallest passage are the important factor in order of the maximum multiplexing way of decision dense wavelength division system at interval.Say that in principle the multiplexing number that dense wavelength division multiplexing system allows is high more, communications cost is low more.Therefore, make the broadband filter of function admirable, the multiplexing number for improving wavelength-division multiplex system seems important unusually.
In the prior art, the medium membranous type wave-division multiplexer filter that has the whole bag of tricks to make, as " all-optical network " (Zhang Baofu etc., the People's Telecon Publishing House, 2000.1) disclosed a kind of multilayer dielectricity membranous type wavelength division multiplexer, be to utilize two refractive indexes to be the excellent lens that gradation type distributes to constitute a parallel light path, within the excellent lens of two 1/4 pitches of parallel light path, insert the beam split deielectric-coating, constitute filter.This filter is elementary wavelength division multiplexer, can only realize the interval width that 200GHZ is following.In 100GHZ and the design of 200GHZ wavelength division multiplexing filter sheet structure, adopt three chamber filters more.As if design Sub/ (HL) 6H6L (HL) 144L (LH) 146L (HL) 6H/air, spectral characteristic part accompanying drawing 7.There is ripple in its spectral filtering free transmission range, promptly usually said rabbit ears effect, the transition portion steepness in cut-off wavelength district of this kind design simultaneously and passband district is not enough, influences unlike signal isolation (exist train of signal around).In addition, can also utilize photoperiod grating, Bragg grating to constitute broadband filter, the Bragg-grating structure dense wave division multiplexer is in the laboratory research stage at present, can't practicality and industrialization.Yet, reduce passband at interval owing to need make full use of existing cable, increase multiplexing number, the broadband filter of wavelength division multiplexer of therefore making function admirable is more and more difficult.
Summary of the invention
Technology of the present invention is dealt with problems and is: overcome the deficiencies in the prior art, a kind of medium membranous type dense wave division multiplexer filter that can increase port number, broadband and function admirable is provided.
One of technical solution of the present invention is: a kind of medium membranous type close wave-division multiplexer filter, and its structure is:
Sub/(HL) N1H8L(HL) 8HL(HL) N2H6L(HL) 9HL(HL) 9H4L(HL) 9HL(HL) 8H2L(HL) 8H0.404H1.21L/Air
In the formula, Sub is a baseplate material, and Air is the incident medium air, deielectric-coating rete coefficient N1=8～11, and N2=9～11, H is Ta 2O 5(tantalum pentoxide), L are SiO 2(silicon dioxide), the antireflection film layer structure of 0.404H1.21L for being added with by air one end, the antireflective coating layer material has adopted and main film structure same material, and promptly H is tantalum pentoxide Ta 2O 5, L is silicon dioxide SiO 2, this two-layer further raising filter transmission passband transmitance reduces to insert loss, makes the interior transmissison characteristic of passband more level and smooth.
The optical thickness of H and L is respectively (1/4) λ 0(λ 0=1550nm).
Two of technical solution of the present invention is: a kind of medium membranous type dense wave division multiplexer filter plate, and its structure is;
Sub/(HL) N3H6L(HL) 8HL(HL) 9H6L(HL) N4HL(HL) 9H4L(HL) 9HL(HL) 8H2L(HL) 8H0.404H1.21L/Air
In the formula, Sub is a baseplate material, and Air is the incident medium air, and H is Ta 2O 5(tantalum pentoxide), L are SiO 2(silicon dioxide), deielectric-coating rete coefficient N3=8～12, N4=9～11, the 0.404H1.21L layer is the antireflective coating structure, and the antireflective coating layer material has adopted and main film structure same material, and promptly H is tantalum pentoxide Ta 2O 5, L is silicon dioxide SiO 2This two-layer further raising filter transmission passband transmitance reduces to insert loss, makes the interior transmissison characteristic of passband more level and smooth.
The optical thickness of H and L is respectively (1/4) λ 0(λ 0=1550nm).
The advantage that the present invention compared with prior art has is as follows:
1. structure of the present invention is four chambeies, and existing structure is three chambeies;
2. the rectangle of four chamber filters with better filter pass band improved the passband effect, reduced the insertion loss;
3. structure of the present invention has added outer antireflective coating, and it is level and smooth to make filter see through passband, eliminates the rabbit ears effect of existing structure.
4. by medium membranous type dense wave division multiplexer filter is carried out reasonable structural design, and controlling diaphragm layer thickness correctly, for channel spacing for the wavelength division multiplexer of 50GHz provides a kind of filter of function admirable, reduced communications cost simultaneously.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention 1;
Fig. 2 is the characteristic curve of the embodiment of the invention 1;
Fig. 3 is the structural representation of the embodiment of the invention 2;
Fig. 4 is the characteristic curve of the embodiment of the invention 2;
Fig. 5 is the structural representation of the embodiment of the invention 3;
Fig. 6 is the characteristic curve of the embodiment of the invention 3.
Fig. 7 is existing three chamber filter design spectral transmittances.
Embodiment
The embodiment of the invention 1 is a kind of band pass filter of full deielectric-coating, its structure as shown in Figure 1, this filter is alternately formed by high index with than the two media material of low-refraction, high index dielectric material H is Ta 2O 5(tantalum pentoxide), its refractive index n H=2.05～2.06; L is SiO than the low refractive index dielectric material 2(silicon dioxide), its refractive index n L=1.46.The optical thickness of H and L is respectively (1/4) λ 0, λ 0Be the centre wavelength of filter, as λ 0=1550nm.This full dielectric filter is identical with the Fabry-Perot Lopa Nationality etalon with dielectric reflection film basically, therefore, analysis to Fabry-Perot Lopa Nationality filter also is applicable to the situation of full dielectric filter, calculates channel spacing and passband half-width so utilize Fabry-Perot Lopa Nationality filter characteristic to analyze formula.Because the simple transmission curve of medium Fabry-Perot Lopa Nationality filter entirely is not a desired shapes, therefore designs a kind of structure and be:
Sub/ (HL) 8H8L (HL) 8HL (HL) 9H6L (HL) 9HL (HL) 9H4L (HL) 9HL (HL) 8H2L (HL) 8The full deielectric-coating filter of H0.404H1.21L/Air, wherein H is Ta 2O 5(tantalum pentoxide), L are SiO 2(silicon dioxide), N 1=8, N 2=9, by correct controlling diaphragm layer thickness, obtain desirable characteristic curve at last as shown in Figure 2, its passband half-width 2 Δ λ=0.72nm, the channel of corresponding dense wave division multiplexer is interior every Δ f=50GHz.
This filter Veeco/Ion Tech.Inc SPECTOR of company coating machine, adopt ion beam sputtering technology, substrate high speed rotating, velocity of rotation: 1200 commentaries on classics/min, the thicknesses of layers monitoring good LASER Light Source of light source monochromaticjty, light source monochromaticjty Δ λ/λ＜1/10000.The signal to noise ratio of light signal is better than 10 5All thicknesses of layers adopt transmission mode once to monitor and finish.
As shown in Figure 3, the embodiment of the invention 2 also is a full medium band pass filter, and its structure is:
Sub/(HL) 11H8L(HL) 8HL(HL) 9H6L(HL) 9HL(HL) 9H4L(HL) 9HL(HL) 8H2L(HL) 8H0.404H1.21L/Air
In the formula, H is Ta 2O 5(tantalum pentoxide), L are SiO 2(silicon dioxide), N 1=11, N 2=9, H and L have (1/4) λ respectively 0Optical thickness, λ 0Be the centre wavelength of filter, λ 0=1550nm.The characteristic curve of filter as shown in Figure 4, its passband half-width 2 Δ λ=0.72nm, in the channel of corresponding dense wave division multiplexer every Δ f=50GHz.
This filter Veeco/Ion Tech.Inc SPECTOR of company coating machine, adopt ion beam sputtering technology, substrate high speed rotating, velocity of rotation: 1200 commentaries on classics/min, the thicknesses of layers monitoring good LASER Light Source of light source monochromaticjty, light source monochromaticjty Δ λ/λ＜1/10000.The signal to noise ratio of light signal is better than 10 5All thicknesses of layers adopt transmission mode once to monitor and finish.
As shown in Figure 5, the structure of the embodiment of the invention 3 is:
Sub/(HL) 8H6L(HL) 8HL(HL) 9H6L(HL) 9HL(HL) 9H4L(HL) 9HL(HL) 8H2L(HL) 8H0.404H1.21L/Air
In the formula, H is Ta 2O 5(tantalum pentoxide), N 1=8, N 2=9 filters, L are SiO 2(silicon dioxide), the optical thickness of H and L are respectively (1/4) λ 0, λ 0Be the centre wavelength of filter, the characteristic curve of filter as shown in Figure 6, passband half-width 2 Δ λ=0.72nm, in the channel of corresponding dense wave division multiplexer every Δ f=50GHz.This filter Veeco/Ion Tech.Inc SPECTOR of company coating machine, adopt ion beam sputtering technology, substrate high speed rotating, velocity of rotation: 1200 commentaries on classics/min, the thicknesses of layers monitoring good LASER Light Source of light source monochromaticjty, light source monochromaticjty Δ λ/λ＜1/10000.The signal to noise ratio of light signal is better than 10 5All thicknesses of layers adopt transmission mode once to monitor and finish.

Claims (4)

1. medium membranous type dense wave division multiplexer filter, it is characterized in that: the structure of media coating is:
Sub/(HL) N1H8L(HL) 8HL(HL) N2H6L(HL) 9HL(HL) 9H4L(HL) 9HL(HL) 8H2L(HL) 8H0.404H1.21L/Air
In the formula, H is tantalum pentoxide Ta 2O 5, L is silicon dioxide SiO 2, the antireflection film layer knot of 0.404H1.21L for being added with by air one end, Sub is a baseplate material, and Air is the incident medium air, and deielectric-coating rete coefficient N1=8～11, N2=9～11 are corresponding medium membrane stack periodicity.
2. medium membranous type dense wave division multiplexer filter according to claim 1 is characterized in that: described antireflective coating layer material has adopted and main film structure same material, and promptly H is tantalum pentoxide Ta 2O 5, L is silicon dioxide SiO 2
3. medium membranous type dense wave division multiplexer filter, it is characterized in that: the structure of media coating is:
Sub/(HL) N3H6L(HL) 8HL(HL) 9H6L(HL) N4HL(HL) 9H4L(HL) 9HL(HL) 8H2L(HL) 8H0.404H1.21L/Air
In the formula, H is Ta 2O 5Tantalum pentoxide, L are SiO 2Silicon dioxide, the antireflection film layer structure of 0.404H1.21L for being added with by air one end, Sub is a baseplate material, and Air is the incident medium air, and deielectric-coating rete coefficient N1=8～11, N2=9～11 are corresponding medium membrane stack periodicity.
4. medium membranous type dense wave division multiplexer filter according to claim 3 is characterized in that: described antireflective coating layer material has adopted and main film structure same material, and promptly H is tantalum pentoxide Ta 2O 5, L is silicon dioxide SiO 2
CN031574912A 2003-09-23 2003-09-23 Dielectric-Layer type dense wavelength division multi plexer filter Expired - Fee Related CN1601949B (en)

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CN100386655C (en) * 2005-10-27 2008-05-07 亚洲光学股份有限公司 Three-way optical filter
CN112130244B (en) * 2020-09-29 2022-07-19 苏州众为光电有限公司 Ultra-steep broadband optical filter compatible with multiple wavelengths
CN113376748B (en) * 2021-06-17 2022-08-02 中国科学院半导体研究所 Composite wave-splitting device of integrated silicon-based Bragg reflector and preparation method thereof
CN114959619B (en) * 2022-06-16 2024-01-23 安徽信息工程学院 Optical filter with high signal-to-noise ratio and preparation method and application thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5770270A (en) * 1997-04-03 1998-06-23 Research Electro-Optics, Inc. Protective and/or reflectivity enhancement of noble metal
CN1406015A (en) * 2001-08-13 2003-03-26 鸿富锦精密工业（深圳）有限公司 Deposition system of close wave-division multiplexer filter
CN1417617A (en) * 2001-11-01 2003-05-14 鸿富锦精密工业（深圳）有限公司 Intelligent film filter

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5770270A (en) * 1997-04-03 1998-06-23 Research Electro-Optics, Inc. Protective and/or reflectivity enhancement of noble metal
CN1406015A (en) * 2001-08-13 2003-03-26 鸿富锦精密工业（深圳）有限公司 Deposition system of close wave-division multiplexer filter
CN1417617A (en) * 2001-11-01 2003-05-14 鸿富锦精密工业（深圳）有限公司 Intelligent film filter

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