CN1601226A - Light send receive chip in single chip integrated wave guide type in use for optic fiber gyroscope and preparation method - Google Patents
Light send receive chip in single chip integrated wave guide type in use for optic fiber gyroscope and preparation method Download PDFInfo
- Publication number
- CN1601226A CN1601226A CN 03160123 CN03160123A CN1601226A CN 1601226 A CN1601226 A CN 1601226A CN 03160123 CN03160123 CN 03160123 CN 03160123 A CN03160123 A CN 03160123A CN 1601226 A CN1601226 A CN 1601226A
- Authority
- CN
- China
- Prior art keywords
- coupler
- optical fibre
- chip
- fibre gyro
- super
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Gyroscopes (AREA)
Abstract
The invention relates to a monolithic integrated waveguide light receiving and emitting chip for optical fibre gyro. It is characterized by that said chip is made up by integrating superluminescent diode, waveguide detector and 3dB coupler on same InP wafer, in which the superluminescent diode and waveguide detector are connected together by means of 3dB coupler, and the third end of said 3dB couple can be used for emitting and receiving light.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly a kind of optical fibre gyro is used monolithic integrated waveguide type light transceiving chip and preparation method thereof.
Background technology
Optical fibre gyro has important use at wide spectrums such as navigation, navigation, system stabilities, especially for the rotation of measuring in 0.1 ° to 10 °/hour scope.For the practical application of optical fibre gyro, reliability and very crucial for the stability of environmental change (as temperature variation and vibration etc.).And the miniaturization of optical fibre gyro is the trend of development.The research direction of this military pre-research project is that superradiance pipe (SLD), photo-detector (PD) and shared three-dB coupler monolithic thereof as light source are integrated on indium phosphide (InP) substrate, and the prime amplifier of itself and detector is encapsulated in the same butterfly shell, the output of employing polarization maintaining optical fibre, fundamental purpose is to improve the reliability of optical fibre gyro, make the optical fibre gyro miniaturization, and reduce the cost of optical fibre gyro.
See also shown in Figure 1, traditional optical fibre gyro in Fig. 1, be to receive three-dB coupler 3 by polarization maintaining optical fibre by the light that the super-radiance light emitting diode (SLD) that the band polarization maintaining optical fibre is exported sends, the process polarizer 4 and phase-modulator 5 are divided into two-beam and enter fiber optic loop 6, the phase shifts that has the Sagnac effect to produce, by three-dB coupler 3 by 2 detections of PIN photodiode (PD).Traditional optical fibre gyro is because make of discrete device, and not only cost height, volume are big, and reliability is also lower.
Summary of the invention
The objective of the invention is to, provide a kind of optical fibre gyro to use monolithic integrated waveguide type light transceiving chip, can be integrated in superradiance pipe (SLD), photo-detector (PD) and shared three-dB coupler monolithic thereof on indium phosphide (InP) substrate as light source, make material with quantum well hybrid technology or docking technique, with the loss of reduction three-dB coupler and the responsiveness of The waveguide detector with different energy gaps.And the prime amplifier of itself and detector is encapsulated in the same butterfly shell, adopt polarization maintaining optical fibre output, have the reliability that improves optical fibre gyro, make the optical fibre gyro miniaturization, and reduce the advantage of optical fibre gyro cost.
Another object of the present invention is to, a kind of optical fibre gyro method for making with monolithic integrated waveguide type light transceiving chip is provided, have that technology is reasonable, yield rate is high, and improved reliability.
Technical scheme of the present invention is:
A kind of monolithic integrated waveguide of the present invention type transceiving chip is characterized in that, this chip is to be produced on the same InP substrate super-radiance light emitting diode, The waveguide detector and three-dB coupler are integrated; Wherein super-radiance light emitting diode and The waveguide detector link together by three-dB coupler and the 3rd end by three-dB coupler transmits and receives light.
, be 1.3 μ m and 1.15 μ m wherein at the semiconductor material of realizing two kinds of different band gap wavelengths on the same substrate on the InP substrate with the quantum well hybrid technology.
Wherein super-radiance light emitting diode adopts the quanta trap semiconductor material.
The method for making of a kind of monolithic integrated waveguide of the present invention type transceiving chip is characterized in that, may further comprise the steps:
Step 1: get N type InP substrate, as substrate;
Step 2: use the MOCVD growing method, the N type of growing successively InP cushion, lower waveguide layer, Multiple Quantum Well, last ducting layer and InP layer;
Step 3: use the quantum well hybrid technology, realize the semiconductor material of two kinds of different band gap wavelengths on the same substrate.
Step 4: at band gap is zone making super-radiance light emitting diode and the waveguide photodetector of 1.31 μ m, is the zone making three-dB coupler of 1.15 μ m at band gap.
Step 5: after integrated chip is finished, be cleaved into the bar shaped of integrated chip,, finish making at the anti-reflection film of the bright dipping end of three-dB coupler plating 0.01-0.2%.
, be 1.3 μ m and 1.15 μ m wherein at the semiconductor material of realizing two kinds of different band gap wavelengths on the same substrate on the InP substrate with the quantum well hybrid technology.
Wherein super-radiance light emitting diode adopts the quanta trap semiconductor material.
Beneficial effect:
This integrated chip is used for optical fibre gyro, be connected with optical fiber between super-radiance light emitting diode and the detector owing to reduced the 3dB fiber coupler, improved the reliability of optical fibre gyro greatly, the while has also been saved the space, be convenient to the miniaturization of optical fibre gyro, reduce cost.Because detector and three-dB coupler all are placed on the refrigerator, improved the temperature stability of optical fibre gyro in addition.
Description of drawings
For further specifying technology contents of the present invention, be described in detail as follows below in conjunction with embodiment and accompanying drawing, wherein:
Fig. 1 is traditional optical fibre gyro structural representation;
Fig. 2 is the optical fibre gyro structural representation that adopts monolithic integrating optical transmit-receive chip.
Embodiment
See also shown in Figure 2, a kind of monolithic integrated waveguide of the present invention type transceiving chip, this chip is super-radiance light emitting diode 7, The waveguide detector 8 and three-dB coupler 9 integrated being produced on the same InP substrate,, be 1.3 μ m and 1.15 μ m wherein at the semiconductor material of realizing two kinds of different band gap wavelengths on the same substrate on the InP substrate with the quantum well hybrid technology; Wherein super-radiance light emitting diode 7 and The waveguide detector 8 link together by three-dB coupler 9 and the 3rd end by three-dB coupler transmits and receives light, and wherein super-radiance light emitting diode 7 adopts the quanta trap semiconductor materials.
The method for making of a kind of monolithic integrated waveguide of the present invention type transceiving chip may further comprise the steps:
Step 1: getting N type InP substrate, as substrate, realize the semiconductor material of two kinds of different band gap wavelengths on the same substrate with the quantum well hybrid technology on this InP substrate, is 1.3 μ m and 1.15 μ m;
Step 2: use the MOCVD growing method, the N type of growing successively InP cushion, lower waveguide layer, Multiple Quantum Well, last ducting layer and InP layer;
Step 3: use the quantum well hybrid technology, realize the semiconductor material of two kinds of different band gap wavelengths on the same substrate;
Step 4: at band gap is zone making super-radiance light emitting diode 7 and the waveguide photodetector 8 of 1.31 μ m, is the zone making three-dB coupler of 1.15 μ m at band gap, and wherein super-radiance light emitting diode adopts the quanta trap semiconductor material;
Step 5: after integrated chip is finished, be cleaved into the bar shaped of integrated chip,, finish making at the anti-reflection film of the bright dipping end of three-dB coupler plating 0.01-0.2%.
The present invention compared with prior art has:
1) single slice integration technique.For the integrated transmitting-receiving tube core of above-mentioned monolithic, need grow on the same substrate semiconductor material of two kinds of different band gap wavelengths: it is the material of 1.3um that SLD, PD adopt band gap wavelength, and three-dB coupler adopts the material of band gap wavelength＜1.15um to reduce the absorption loss of three-dB coupler to light, must have high coupling efficiency (＞99%) and extremely low reflection (＜0.1%) between SLD and the three-dB coupler.
2) making of three-dB coupler.Make three-dB coupler with the passive wave guide manufacture craft on the InP sill, key is the lithographic technique of the low damage vertical waveguide of the design of passive wave guide and InP sill.
3) The waveguide detector.Integrated in order to realize monolithic, adopted The waveguide detector in the Project design scheme.Adopt the response efficiency of wide wide raising The waveguide detector, reduce the long dark current that reduces of bar.
4) high-level efficiency, wide range is wide, spectrum is level and smooth SLD.Adopt the semiconductor material of quantum well, can improve the electro-optical efficiency of SLD, and quantum-well materials gain spectrum width broad.Must seamlessly transit between the integrated transceiving chip each several part, the three-dB coupler exit end need plate anti-reflection film (～0.1%), to reduce the influence of light reflection to SLD spectrum smoothness.
Adopt monolithic integrating optical transmit-receive chip, SLD, PD, three-dB coupler are integrated on the same InP substrate, reduced the coupling port number of optical chip and optical fiber, can improve the reliability of optical coupling efficiency and coupling, reduced environmental change to the transceiver module Effect on Performance, avoided using the bigger fiber coupler of volume, the volume of transceiver module can reduce greatly.Owing to reduced the coupling port number, reduced the coupling packaging cost, so monolithic integrated device had potential advantages cheaply.
Because monolithic integrating optical transmit-receive chip volume is little, can be encapsulated in the prime amplifier of detector in the same butterfly shell, can freeze simultaneously to each device when reducing volume.
Claims (6)
1, a kind of optical fibre gyro is characterized in that with monolithic integrated waveguide type light transceiving chip, and this chip is to be produced on the same InP substrate super-radiance light emitting diode 7, The waveguide detector and three-dB coupler are integrated; Wherein super-radiance light emitting diode and The waveguide detector link together by three-dB coupler and the 3rd end by three-dB coupler transmits and receives light.
2, using monolithic integrated waveguide type light transceiving chip by the described optical fibre gyro of claim 1, it is characterized in that, wherein at the semiconductor material of realizing two kinds of different band gap wavelengths on the same substrate on the InP substrate with the quantum well hybrid technology, is 1.3 μ m and 1.15 μ m.
3, use monolithic integrated waveguide type light transceiving chip by the described optical fibre gyro of claim 1, it is characterized in that wherein super-radiance light emitting diode adopts the quanta trap semiconductor material.
4, a kind of optical fibre gyro is characterized in that with the method for making of monolithic integrated waveguide type light transceiving chip, may further comprise the steps:
Step 1: get N type InP substrate, as substrate;
Step 2: use the MOCVD growing method, the N type of growing successively InP cushion, lower waveguide layer, Multiple Quantum Well, last ducting layer and InP layer;
Step 3: use the quantum well hybrid technology, realize the semiconductor material of two kinds of different band gap wavelengths on the same substrate;
Step 4: at band gap is zone making super-radiance light emitting diode and the waveguide photodetector of 1.31 μ m, is the zone making three-dB coupler of 1.15 μ m at band gap.
Step 5: after integrated chip is finished, be cleaved into the bar shaped of integrated chip,, finish making at the anti-reflection film of the bright dipping end of three-dB coupler plating 0.01-0.2%.
5, by the method for making of the described optical fibre gyro of claim 4 with monolithic integrated waveguide type light transceiving chip, it is characterized in that,, be 1.3 μ m and 1.15 μ m wherein at the semiconductor material of realizing two kinds of different band gap wavelengths on the same substrate on the InP substrate with the quantum well hybrid technology.
6, by the method for making of the described optical fibre gyro of claim 4, it is characterized in that wherein super-radiance light emitting diode adopts the quanta trap semiconductor material with monolithic integrated waveguide type light transceiving chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03160123 CN1601226A (en) | 2003-09-26 | 2003-09-26 | Light send receive chip in single chip integrated wave guide type in use for optic fiber gyroscope and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03160123 CN1601226A (en) | 2003-09-26 | 2003-09-26 | Light send receive chip in single chip integrated wave guide type in use for optic fiber gyroscope and preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1601226A true CN1601226A (en) | 2005-03-30 |
Family
ID=34660806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03160123 Pending CN1601226A (en) | 2003-09-26 | 2003-09-26 | Light send receive chip in single chip integrated wave guide type in use for optic fiber gyroscope and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1601226A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104931036A (en) * | 2015-07-08 | 2015-09-23 | 浙江大学 | Lithium-niobate-based hybrid integration fiber-optic gyroscope optical chip |
| CN107655468A (en) * | 2017-11-02 | 2018-02-02 | 重庆鹰谷光电股份有限公司 | Optical fibre gyro receiving and transmitting integrated module |
| CN109579814A (en) * | 2018-11-14 | 2019-04-05 | 深圳朗光科技有限公司 | A kind of fibre optic gyroscope |
| JP2021516791A (en) * | 2018-04-05 | 2021-07-08 | ノースロップ グラマン システムズ コーポレーション | Redirected light modulator output |
-
2003
- 2003-09-26 CN CN 03160123 patent/CN1601226A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104931036A (en) * | 2015-07-08 | 2015-09-23 | 浙江大学 | Lithium-niobate-based hybrid integration fiber-optic gyroscope optical chip |
| CN104931036B (en) * | 2015-07-08 | 2017-10-03 | 浙江大学 | A kind of lithium niobate base hybrid integrated optical fibre gyro optical chip |
| CN107655468A (en) * | 2017-11-02 | 2018-02-02 | 重庆鹰谷光电股份有限公司 | Optical fibre gyro receiving and transmitting integrated module |
| JP2021516791A (en) * | 2018-04-05 | 2021-07-08 | ノースロップ グラマン システムズ コーポレーション | Redirected light modulator output |
| JP7047124B2 (en) | 2018-04-05 | 2022-04-04 | ノースロップ グラマン システムズ コーポレーション | Redirected light modulator output |
| CN109579814A (en) * | 2018-11-14 | 2019-04-05 | 深圳朗光科技有限公司 | A kind of fibre optic gyroscope |
| CN109579814B (en) * | 2018-11-14 | 2020-09-01 | 深圳朗光科技有限公司 | Optical fiber gyroscope |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Arakawa et al. | Silicon photonics for next generation system integration platform | |
| US6027255A (en) | Bidirectional optical communication module using single optical fiber | |
| US8031012B2 (en) | Optoelectronic oscillator and pulse generator | |
| US7228022B1 (en) | Polymer integrated optical transceiver | |
| JP2004356629A (en) | Edge-illuminated refracting-facet type light receiving element and its manufacturing method | |
| Ruan et al. | Efficient hybrid integration of long-wavelength VCSELs on silicon photonic circuits | |
| KR20130085763A (en) | Hybrid laser light source for photonic integrated circuit | |
| EP1884741A1 (en) | Fiber optic gyroscope having a silicon-based optical chip | |
| CN107611774A (en) | A kind of silicon substrate integrated tunable laser structure and its control method | |
| Malheiros-Silveira et al. | III–V Compound Semiconductor Nanopillars Monolithically Integrated to Silicon Photonics | |
| CN105865433A (en) | Monolithic integration depolarized fiber optic gyroscope optical chip | |
| CN109186599A (en) | A kind of positioning chip for new-energy automobile navigation | |
| CN113848609A (en) | Photonic integrated coupling structure and photonic integrated device | |
| KR20080012367A (en) | Integrated circuit device having optically coupled layers | |
| CN115752420A (en) | Integrated optical fiber gyroscope based on LNOI platform | |
| CN1601226A (en) | Light send receive chip in single chip integrated wave guide type in use for optic fiber gyroscope and preparation method | |
| IT202000005710A1 (en) | Semi-finished product for the construction of a gyroscope and gyroscope including the semi-finished product. | |
| WO2022130297A1 (en) | Photonic integrated chip | |
| CN115407532A (en) | Coupling structure on lithium niobate sheet based on heterogeneous integrated thin film, preparation method and optical device | |
| CN113900285B (en) | Technology insensitive modulator | |
| CN113280803A (en) | Sensitive unit and optical gyroscope | |
| CN117055152A (en) | Photoelectric fusion integrated chip based on silicon-silicon oxide-erbium-doped lithium niobate heterogeneous wafer and method | |
| CN100385203C (en) | Optical gyroscope made from quantum crystal and method for making same | |
| US20190324210A1 (en) | Multi-mode interference (mmi) based laser devices for heterogeneous platforms | |
| Davenport et al. | Efficient and broad band coupling between silicon and ultra-low-loss silicon nitride waveguides |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |