CN1598928A - Thin film forming method and system - Google Patents
Thin film forming method and system Download PDFInfo
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- CN1598928A CN1598928A CN 03159543 CN03159543A CN1598928A CN 1598928 A CN1598928 A CN 1598928A CN 03159543 CN03159543 CN 03159543 CN 03159543 A CN03159543 A CN 03159543A CN 1598928 A CN1598928 A CN 1598928A
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- ion beam
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- formation method
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- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000010409 thin film Substances 0.000 title 1
- 238000000151 deposition Methods 0.000 claims abstract description 42
- 238000005530 etching Methods 0.000 claims abstract description 42
- 230000008021 deposition Effects 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000010884 ion-beam technique Methods 0.000 claims description 32
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- 239000007789 gas Substances 0.000 claims description 18
- 238000005137 deposition process Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims 1
- 150000002500 ions Chemical group 0.000 description 35
- 239000000758 substrate Substances 0.000 description 13
- 238000000576 coating method Methods 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000007737 ion beam deposition Methods 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000007735 ion beam assisted deposition Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
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- Magnetic Heads (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention discloses a film forming method, which comprises the following steps: (1) holding at least one object in a vacuum chamber; (2) depositing a film-forming material on the object; (3) etching the film-forming material while depositing the film-forming material; in the present invention, the deposition and etching processes are performed simultaneously. The invention also discloses a system for realizing the method.
Description
Technical field
The present invention relates to a kind of method and system that forms thin layer, protective seam, rub resistance layer, refer to a kind of method and system that on magnetic devices, forms protective seam especially.
Background technology
At present, magnetic devices as magnetic read/write head, disk, is widely used in data storing industry.With reference to figure 4, typical magnetic read/write head, as magnetic resistance (magneto-resistance, MR) magnetic head, generally include substrate 34, radome (shield) 33, magnetoresistive element 35, coil 32 and yoke (yoke) 31. is with reference to figure 6, and typical disk comprises substrate 10, cushion (buffer layer) 20 and magnetosphere (magneticlayer) 30.Said apparatus has some important elements, as radome 33, and magnetoresistive element 35, yoke 31, and magnetosphere 30 is made by functional material, and these functional material major parts are metals, as Ni, Fe, Mn, Pt, Au, Co, Ti, Cu etc.In these metal materials some are very easy to be corroded or to damage.Therefore, diaphragm (coating) is used to stop these elements to be corroded or damages.
In addition, in recent years, (Hard Disk Driver, surface recording density/area density HDD) (surface recording density/areal density) constantly increases the hard disc driver.The growth of area density needs higher signal intensity and lower flying height (flying height); Accordingly, just need a thinner coating (overcoat).For example, in the near future, for magnetic read/write head, in order to reach a high area density (as greater than 120Gb per square inch), the coating (thickness is equal to or less than 3nm) that spy approaches is very necessary.Accordingly, lower flying height and higher rotating speed need coating that excellent characteristic is arranged, as hardness, conduction and frictional behaviour.
In order to form the protective seam (overcoat) that satisfies above-mentioned needs, many film formation methods are employed.Current; the most common method at head surface formation protective seam is electron cyclotron chemical vapor deposition (Electron Cyclotron Resonance Chemical Vapor Deposition, ECR CVD) and direct or secondary ion deposition (directly or secondary ion beam deposition (IBD))., these methods have exposed in the limitation that reduces on the coating thickness.This situation have a following reason: the first, in order to increase magnetic flux density (magnetic flux density) gradually, some critical elements on the magnetic devices, as the read/write element material, it is more and more responsive to corrosion that yoke and radome become.Second reason is that these methods all use hydrocarbon as precursor, so the coating that forms have certain hydrogen richness (5%～50%, atm%), when the coating attenuation, to form many flaws (for example blank (vacancy), even pin hole (pin hole)) on it.These flaws will display in manufacturing, application and the reliability testing process of magnetic devices.
It is very short that the another one problem of said method is that high deposition causes forming time of coating (for example being equal to or less than 3nm), and this will make and be formed on coating heterogeneity on a collection of magnetic devices.In addition, gate of current plated film machinery utilization comes the blocks ions bundle, and described gate needs 2 seconds time to open or close usually.In opening or closing the process of gate, still have some ion beam bombardment magnetic devices surfaces, this also can cause being formed on the coating heterogeneity on a collection of magnetic devices.
Therefore, for overcoming the shortcoming of prior art, provide a kind of method and system that on magnetic devices, forms good film very necessary.
Summary of the invention
Based on the deficiencies in the prior art, the present invention is characterized in to provide a kind of film forming method and system, can on object, form the homogeneity good film.
In order to obtain above-mentioned feature, a kind of film of the present invention formation method comprises the steps: that at least one object of (1) fixing is in vacuum chamber; (2) a kind of filmogen of deposition is on described object; (3) the described filmogen of etching when being deposited as membrane material.In the present invention, described deposition and etching process are controlled so as to simultaneously and carry out.Described deposition process is by purchasing a film forming target and launch this film forming target of ion beam bombardment and carry out.Described etching process comprises the steps: that (1) prepares inertia or the active gases with specified pressure in described vacuum chamber; (2) the described gas generation of ionization etch ion bundle bombards described object.
A kind of system of the present invention comprises: the vacuum chamber that is used for film forming; Object is fixed on locating device in the vacuum chamber; On described object, carry out the treating apparatus of depositing operation; Described object is carried out etched Etaching device; And described treating apparatus of control and the controller of Etaching device Ion Beam Treatment time.In the present invention, described controller is one and places the preceding gate of described object that this gate is opened when the ion beam of described treating apparatus and Etaching device emission is stablized.
As one embodiment of the invention, a kind of film formation method comprises the steps: that at least one object of (1) fixing is in vacuum chamber; (2) described vacuum chamber is evacuated to the air pressure of setting, and inertia or active gases are introduced into etching source (etching source) then; (3) described inertia or active gases are ionized and are drawn (extract) by the grid in etching source and produce etch ion bundle (etching beam); (4) first sedimentary origins (deposition source) are unlocked and produce the first required deposition ion beam (deposition beam); (5) the substrate gate that is installed in before the object of described deposition and etching source stops; (6) when etch ion bundle and deposition ion beam when all stablize, described substrate gate is opened, etch ion bundle and deposit ion beam and bombard object simultaneously and form the ground floor film thereon.
In the present invention, can on described ground floor film, form second layer film by second sedimentary origin bombardment object.
Wherein, described first sedimentary origin can be ion beam depositing source (ion beam deposition (IBD) source), ion beam sputter depositing source (ion beam sputter deposition (IBSD) source), ion cluster sedimentary origin (ion cluster beam (ICB) deposition source) or ion beam assisted depositing source (ion beam assisted deposition (IBAD) source).
The film forming method and system of the present invention uses etch ion bundle bombardment object in deposit film, not only improved sticking work and the coating property of film on object, and greatly reduced deposition and prolonged sedimentation time, like this, film forming homogeneity obviously improves on a collection of object.Obviously, low deposition also can alleviate when the switch gate influence to the homogeneity of film.In addition, film formation method of the present invention has also overcome the thickness limits (for example, being equal to or greater than 3nm) of the film with superior in reliability that forms by conventional films formation method.
For making the present invention easier to understand, further set forth the embodiment that film of the present invention forms method and system below in conjunction with accompanying drawing.
Description of drawings
Fig. 1 is the process flow diagram of an embodiment of film formation method of the present invention;
Fig. 2 forms the synoptic diagram of an embodiment of system for film of the present invention;
Fig. 3 is the top view of a magnetic head;
Fig. 4 is the cut-open view of the interpolar (pole is shown in the ellipse IV) of magnetic head among Fig. 3 along the A-A line, and described head surface has the diaphragm that forms by film formation method of the present invention;
Fig. 5 is the stereographic map of a disk;
Fig. 6 is that disk is along the cut-open view of B-B line among Fig. 5, and described magnetic disk surface has the diaphragm that forms by film formation method of the present invention;
Fig. 7 is the scanning electron microscopy sheet (Scanning Electron Microscope picture, SEM picture) of diaphragm after the acidleach test that forms by conventional films formation method;
Diaphragm the scanning electron microscopy sheet (Scanning Electron Microscope picture, SEM picture) acidleach test after of Fig. 8 for forming by film formation method of the present invention.
Embodiment
A kind of film formation method comprises the steps: that at least one object of (1) fixing is in vacuum chamber; (2) a kind of filmogen of deposition is on described object; (3) the described filmogen of etching when being deposited as membrane material.In the present invention, described deposition and etching process are controlled so as to simultaneously and carry out.Described deposition process is by purchasing a film forming target and launch this film forming target of ion beam bombardment and carry out.Described etching process comprises the steps: that (1) prepares inertia or the active gases with specified pressure in described vacuum chamber; (2) the described gas generation of ionization etch ion bundle bombards described object.
With reference to the accompanying drawings, Fig. 1 comprises the steps: at least one object of (1) fixing (step 100) in vacuum chamber for the process flow diagram of an embodiment of film formation method of the present invention, this method; (2) described vacuum chamber is evacuated to the air pressure of setting, and inertia or active gases are introduced into etching source (etching source) (step 101) then; (3) described inertia or active gases are ionized and are drawn by the grid in etching source and produce etch ion bundle (etching beam) (step 102); (4) first sedimentary origins (depositionsource) are unlocked and produce the first required deposition ion beam (deposition beam) (step 103); (5) the substrate gate that is installed in before the object of described deposition and etching source stops (step 104); (6) when etch ion bundle and deposition ion beam when all stablize, described substrate gate is opened, etch ion bundle and deposit ion beam and bombard object simultaneously and form ground floor film (step 105) thereon.
In the present invention, can on described ground floor film, form second layer film by second sedimentary origin bombardment object.Second sedimentary origin is an ion gun (ion beam source) that uses hydrocarbon to make precursor and have another ion gun to assist, or a microwave ion source (microwave ion source) that uses hydrocarbon to make precursor and have another ion gun to assist.Accordingly, formed second tunic is a diamond-like carbon film.In step (103), the first deposition ion beam is to produce by remove to bombard a silicon (or other materials, as graphite) target with an ion gun, and first tunic is silicon (perhaps other materials, as a carbon) film.In step (101), the etching source can be radio frequency induction plasma source (radiofrequency inductive plasma source), or Kaufman ion gun (Kaufman ionsource).Described grid can be double-layer structure (two-platter structure) or three-decker, and has concave, convex or even curface.In the present invention, be preferably three-decker.Grid with three-decker comprises an ion beam grid (beam grid), sup.G (suppressor grid) and earth grid (ground grid).
In step (101), (Mass FlowController MFC) is introduced into the etching source by mass flow controller for described inertia or active gases.Before described inertia or active gases were introduced into, the air pressure of described vacuum chamber was evacuated to 1X10E-6 holder (Torr) usually.After described inertia or active gases were introduced into, the etching source was lighted, and described after a period of time beam-plasma becomes stable.Then, first sedimentary origin is unlocked.In the present invention, the described etching source and the first sedimentary origin front end respectively are provided with a gate, when the beam-plasma that produces when etching source and first sedimentary origin becomes and stablize, and above-mentioned two gates be opened while etching and plating object.
In the present invention, etching source and sedimentary origin all are adjusted to an optimized power.For fear of the damage to critical elements on the object (as the magnetoresistive element on the magnetic head among Fig. 4 35), the ion in etching source can be usually between 60 electron volts and 200 electron volts.The parameter of first sedimentary origin can be adjusted arbitrarily according to the needs of deposition and homogeneity.
Provide specific embodiment of the present invention below so that more detailed understanding the present invention.
With reference to figure 2, at first, the tray 11 that object 4 is housed is put in the vacuum chamber 9 by robot and is fixed on the stationary installation 7, described tray 11 certain angle that tilts as required.In the present invention, etching source 1 is set in film forming system and first sedimentary origin 2 (being the secondary ion depositing system in the present embodiment) is used for plating magnetic devices 4, and in addition, two gates 6,3 are contained in etching source 1 and first sedimentary origin, 2 front ends respectively.Etching source 1 can produce etch ion bundle (being ar-ion beam in the present embodiment), and first sedimentary origin 2 can produce the first deposition ion beam.Substrate gate 5 be provided at magnetic devices 4 front ends stop magnetic devices 4 when etch ion bundle and the first deposition ion beam are unstable by plating.
Described plating process in vacuum chamber 9 realizes as follows:
At first, etching source 1 is opened in order to produce ar-ion beam, described etching source 1 condition of work is as follows: the flow of argon gas is 15 SCCM, the radio frequency power that ignites is 350 watts, beam voltage (beam voltage) is 120 volts, beam current (beam current) is 100 milliamperes, and suppressing voltage (suppressorvoltage) is 200 volts, and the incident angle of ar-ion beam directive object 4 is 60 degree.
After 30 seconds, when ar-ion beam was stablized, gate 6 and substrate gate 5 were opened.Then, the object on tray 11 4 is cleaned out up to the surface of object 4 by the ar-ion beam etching 30～60 seconds.Then, substrate gate 5 is closed, and etching source 1 keeps above-mentioned condition of work to keep opening.
Here selecting silicon fiml is first tunic, and secondary ion depositing system (secondary ion beamdeposition system) 2 is used for amorphous silicon deposition.Described secondary ion depositing system 2 comprises ion gun 22 and silicon target material 21.The described condition of work that is used to bombard the ion gun 22 of silicon target material 21 is set as follows: the flow of argon gas is 10 SCCM, the radio frequency power that ignites is 400 watts, beam voltage is 500 volts, beam current is 300 milliamperes, suppressing voltage is 300 volts, and the incident angle of the ar-ion beam directive silicon target material 21 that sends from ion gun 22 is 35 to spend.
After 30 seconds, when ion beam was stablized, gate 3 and substrate gate 5 were opened.Simultaneously, gate 6 also is opened, and then, the ar-ion beam that sends from etching source 1 in the step 1 bombards object 4 surfaces and makes silicon fiml fine and close more.Described coating process reached 1nm up to silicon film thickness in lasting 30～50 seconds.Subsequently, gate 6,3 and substrate gate 5 are closed, and secondary ion depositing system and etching source 1 also are switched off simultaneously.
Step 3 plating second tunic
Adopt ethene to form second tunic-diamond-like carbon film (DLC film) in this step.The diamond-like carbon film plating uses with the identical ion gun in etching source in the step 11, and keeps all condition of work constant, only argon gas is changed into the ethene that flow is 80 SCCM.After the above-mentioned etching source that is modified was opened 30 seconds, it is stable that ion beam becomes, and open the sluices 6 and substrate gate 5 this moment.Then, Ionized ethene section is deposited on the silicon fiml of object 4 and forms diamond-like carbon film, and like this, coated body has just formed.After this, gate 6 and substrate gate 5 are closed, and ion gun also is closed.When object 4 was magnetic head or magnetic disc, diaphragm 36 or 40 formed thereon was respectively shown in Fig. 3-4 and 5-6.
In above-mentioned steps, described system also comprises a neutralizer (neutralizer), and the electric charge that is used to eliminate on the object 4 gathers.In addition, in the present invention, tray 11 rotates with 15 rev/mins speed.
With reference to figure 7-8; the result of the diaphragm with same thickness in the acidleach test by contrast the present invention and the formation of conventional films formation method; as seen the diaphragm that forms on object by film formation method of the present invention shows good performance, as the surface coverage performance.Test result shows that simultaneously reducing to 2.5nm at the diaphragm that forms on the object at thickness by film formation method of the present invention carries out not having any obvious corrosion phenomenon when acidleach is tested.Yet, when thickness is 4nm, just can reach this effect at the diaphragm that forms on the object by conventional films formation method.
In the present invention, argon gas can be replaced by other inertia or active gases, and first sedimentary origin 2 also can be direct ion bundle sedimentary origin (directly ion beam deposition (IBD) source), ion beam sputter depositing source (ion beam sputter deposition (IBSD) source), ion cluster sedimentary origin (ion cluster beam (ICB) deposition source) or ion beam assisted depositing source (ionbeam assisted deposition (IBAD) source).Because above-mentioned sedimentary origin is well known to those skilled in the art, do not repeat them here.
The above disclosed preferred embodiment that only forms method and system for film of the present invention can not limit the present invention's interest field certainly with this, so according to the equivalent variations that the present patent application claim is done, still belong to the scope that the utility model is contained.
Claims (10)
1. a film formation method comprises the steps:
At least one object of fixing is in vacuum chamber;
Deposit a kind of filmogen on described object;
When being deposited as membrane material, described filmogen is carried out etching.
2. film formation method as claimed in claim 1 is characterized in that: described deposition and etching process are controlled so as to simultaneously and carry out.
3. film formation method as claimed in claim 2 is characterized in that: described deposition process is by purchasing a film forming target and launch this film forming target of ion beam bombardment and carry out.
4. film formation method as claimed in claim 3 is characterized in that: described etching process comprises the steps:
Preparation has specified pressure in described vacuum chamber inertia or active gases;
The described gas of ionization produces the etch ion bundle and bombards described object.
5. film formation method as claimed in claim 1 is characterized in that: described control to deposition and etching process is behind described ion beam and etch ion Shu Wending, exposes described object and deposits simultaneously and etching.
6. system comprises:
The vacuum chamber that is used for film forming;
Object is fixed on locating device in the vacuum chamber;
On described object, carry out the treating apparatus of depositing operation;
Described object is carried out etched Etaching device; And
Control described treating apparatus and the controller of Etaching device Ion Beam Treatment time.
7. system as claimed in claim 6 is characterized in that: described controller is one and places the preceding gate of described object that this gate is opened when the ion beam of described treating apparatus and Etaching device emission is stablized.
8. system as claimed in claim 7 is characterized in that: two additional gates are installed in the front end of described treating apparatus and Etaching device respectively.
9. as claim 6 or 8 described systems, it is characterized in that: comprise a grid in the described Etaching device.
10. system as claimed in claim 9 is characterized in that: described system also comprises a neutralizer, and the electric charge that is used to eliminate on the object gathers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB03159543XA CN100341047C (en) | 2003-09-17 | 2003-09-17 | Film forming method and system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB03159543XA CN100341047C (en) | 2003-09-17 | 2003-09-17 | Film forming method and system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1598928A true CN1598928A (en) | 2005-03-23 |
| CN100341047C CN100341047C (en) | 2007-10-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB03159543XA Expired - Lifetime CN100341047C (en) | 2003-09-17 | 2003-09-17 | Film forming method and system |
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Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19622732C2 (en) * | 1996-06-07 | 2000-04-13 | Ibm | Surface modification of magnetic heads |
| CN1186873A (en) * | 1996-11-26 | 1998-07-08 | 西门子公司 | Distribution plate for reaction chamber with multiple gas inlets and separate mass flow control loops |
| EP1208002A4 (en) * | 1999-06-03 | 2006-08-02 | Penn State Res Found | Deposited thin film void-column network materials |
| US7115516B2 (en) * | 2001-10-09 | 2006-10-03 | Applied Materials, Inc. | Method of depositing a material layer |
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