CN1594100A - PbS纳米带及其制法 - Google Patents
PbS纳米带及其制法 Download PDFInfo
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- CN1594100A CN1594100A CN200410041306.8A CN200410041306A CN1594100A CN 1594100 A CN1594100 A CN 1594100A CN 200410041306 A CN200410041306 A CN 200410041306A CN 1594100 A CN1594100 A CN 1594100A
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- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 17
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- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- JEHCHYAKAXDFKV-UHFFFAOYSA-J lead tetraacetate Chemical compound CC(=O)O[Pb](OC(C)=O)(OC(C)=O)OC(C)=O JEHCHYAKAXDFKV-UHFFFAOYSA-J 0.000 claims description 2
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- 239000000084 colloidal system Substances 0.000 description 2
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- 239000003960 organic solvent Substances 0.000 description 2
- 239000004054 semiconductor nanocrystal Substances 0.000 description 2
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Abstract
一种PbS纳米带,它是宽为20~80nm,长径比为50∶1~20∶1的PbS纳米带。经XRD测定,结果表明它为纯的立方相结构的PbS。峰的位置与强度都与文献值相匹配。没有发现杂相峰,表明产品的纯度比较高。本发明公开了其制法。
Description
一、技术领域
本发明涉及硫化铅纳米带。
二、背景技术
IIB-VIA族半导体纳米晶体具有独特的电学性质和光学性质,有着广泛的应用;如发光二极管[参见:V.L.Colvin,M.C.Schlamp and A.P.Alivisatos,Nature,1994,370,354],单电子晶体管[参见:D.L.Klein,R.Roth,A.K.L.Lim,A.P.Alivisatos and P.L.McEuen,Nature,1997,389,699],和薄膜场发射晶体管[参见:B.A.Ridley,B.Nivi and J.M.Jacobson,Science,1999,286,746]。半导体纳米晶体的性能强烈地依赖于粒子尺寸[参见:A.P.Alivisatos,Science,1996,271,933.],因此精确控制它们的尺寸大小和分布显得尤为重要。作为一种IIB-VIA族的半导体材料的PbS具有近红外的带隙,约为0.41eV。形成纳米团簇时,其带隙会变宽至可见区甚至紫外区[参见:S.Gallardo,M.Gutierrez,A.Henglein and E.Janata,Ber Bunsen-Ges.Phys.Chem.,1989,93,1080.]。因而PbS纳米晶体和纳米线可应用场致发光器件如发光二极管。量子点PbS还具有良好的三阶非线性光学性质[参见:Y.Wang,Acc.Chem.Res.,1991,24,133],使其在光学器件有着广泛的应用前景,如光学转换装置。目前,控制制备PbS纳米线的方法主要有模板法,包括聚合物模板法[参见:a.Y.Wang,A.Suna,W.Mahler and R.Kasowski,J.Chem.Phys.,1987,87,7315;b.S.Wang and S.Yang,Langmuir,2000,16,389;c.E.Leontidis,M.Orphanou,T.Kyprianidou-Leodidou,F.Krumeich and W.Caseri,NanoLett.,2003,3,569],介孔硅土模板法[参见:F.Gao,Q.Lu,X.Liu,Y.Yan and D.Zhao,Nano Lett.,2001,1,743],γ-射线辐射诱导的反相液晶模板法[参见:Z.P.Qiao,Y.Xie,J.G.Xu,Y J.Zhu and Y.T.Qian,J.Colloid Interface Sci.,1999,214,459]。然而,这些方法制得的纳米线大多直径很大,不能显示出量子限制效应。
许多有机溶剂已经被用在合成PbS纳米粒子中,包括甲醛[参见:X.H.Liao,J.J.Zhu and H.Y.Chen,Mater.Sci.Eng.B,2001,85,85.],二甲亚砜(DMSO)[参见:Y.Zhou,H.Itoh,T.Uemura,K.Naka and Y.Chujo,Langmuir,2002;18;5287.],乙二胺(EA)[参见:a.J.Zhu,S.Liu,O.Palchik,Y.Koltypin and A.Gedanken,J.Solid State Chem.,2000,153,342;b.M.Chen,Y.Xie,Z.Yao,Y.Qian and G.Zhou,Mater.Res.Bull.,2002,37,247],丙三醇[C.Wang,W.X.Zhang,X.F.Qian,X.M.Zhang,Y.Xie and Y.T.Qian,Mater.Lett.,1999,40,255.],聚乙二醇[T.Ding,J.-R.Zhang,S.Long,J.-J.Zhu Microelectr.Eng.,2003,66,46.],等等。因为不同的有机溶剂具有不同的粘度、极性、硬度,在反应中提供了不同的环境,影响了前体的溶解度和传质行为,因此产物具有不同的形态和大小[W.S.Sheldrick and M.Wachhold,Angew.Chem.Int.Ed.Engl.,1997,36,206.]。迄今为止,只有很少的文献报道了在乙醇中合成PbS纳米粒子[参见:a.Xie,Y.;Xu,J.G;Zhu,Y.J.;Qian,Y.T.J.Colloid Interface Sci.1999,214,459;b.T.Ding and J.-J.Zhu,Mater.Sci.Eng.B,2003,100,307]。用这种方法合成PbS纳米带则还未见报道。
三、发明内容
本发明的目的是提供一维PbS纳米带及其制法。
本发明的技术方案如下:
一种PbS纳米带,它是宽为20~80nm,长宽比为50~20的PbS纳米带。
上述的PbS纳米带为立方相结构的PbS。
一种制备上述PbS纳米带的方法,将醋酸铅、单质硫、氢氧化钠以物质的量之比为2∶3~4∶6~9的比例加到乙醇中,在恒温槽中在60~70℃反应2~6小时。反应结束后,有大量黑色沉淀产生,冷却至室温,离心分离,沉淀用蒸馏水、乙醇和丙酮依次洗涤,将所得的沉淀物置于室温和空气中自然晾干,得到黑色粉末,即为本发明的PbS纳米带。
本发明的PbS纳米带经XRD测定,结果表明它为纯的立方相结构PbS。峰的位置与强度都与文献值相匹配[参见:Joint Committee on Powder DiffractionStandards(JCPDS),File No 05-592.]。没有发现杂相峰,表明产品的纯度比较高(见附图1)。通过TEM照片,观察到本发明的PbS为纳米带(见附图2)。通过调节不同的反应条件,可控制得到不同大小,不同长宽比的PbS纳米带。
四、附图说明
图1为本发明的PbS纳米带的XRD图;
图2为本发明的PbS纳米带的TEM照片
图3为本发明的PbS纳米带的XPS表征结果。
四、具体实施方式
实施例1.PbS纳米带的制备
在120mL的圆底烧瓶内加入1.60g三水合醋酸铅、0.20g单质硫、0.65g氢氧化钠和60mL无水乙醇。将此混合物置于60℃恒温槽中不停搅拌下反应4h。反应完成后,待冷却至室温以后进行离心分离(12000rounds/min,5min),用蒸馏水、乙醇和丙酮依次洗涤沉淀物,然后将所得到的沉淀物置于室温和空气中自然晾干。最终得到的产品为黑的粉末。通过XRD和XPS表征说明产物为PbS,TEM观察得到的产物形态为带状结构;其宽度约为30~50nm;而其长度达1μm,其平均长宽比约为25,产率为95%。
实施例2.PbS纳米带的制备
在120mL的圆底烧瓶内加入1.6g三水合醋酸铅、0.20g单质硫、0.76g氢氧化钠和60mL无水乙醇。将此混合物置于60℃恒温槽中不停搅拌下反应4h。得到产物形态同例1,产率约90%
实施例3.PbS纳米带的制备
在120mL的圆底烧瓶内加入1.6g三水合醋酸铅、0.27g单质硫、0.50g氢氧化钠和60mL无水乙醇。将此混合物置于60℃恒温槽中不停搅拌下反应4h。得到产物形态同例1,产率约85%。
实施例4.PbS纳米带的制备
将例1.的反应延长到6h,产物纳米带宽度约为40~60nm;而其长度达1.4μm,其平均长宽比约为25。在反应中反应物基本完全反应。产率约90%。
实施例5.PbS纳米带的制备
同例1.的混合物在恒温槽中70℃下不停搅拌下反应2h,得到的产物为PbS纳米带。产物形态为宽度约为50~70nm,长度约1.4μm的纳米带,其平均长宽比为20,产率为90%。
实施例6.PbS纳米带的制备
在120mL的圆底烧瓶内加入1.6g三水合醋酸铅、0.2g单质硫、0.45g氢氧化钠和60mL无水乙醇。将此混合物置于60℃恒温槽中不停搅拌下反应4h。得到产物形态为宽度为20nm,长度约1μm的纳米带。其平均长宽比约为50,产率为90%。
实施例7.PbS纳米带的制备
在120mL的圆底烧瓶内加入1.6g三水合醋酸铅、0.2g单质硫、0.55g氢氧化钠和60mL无水乙醇。将此混合物置于60℃恒温槽中不停搅拌下反应4h。得到产物形态为宽度为20nm,长度约600nm的纳米带。其平均长宽比约为30,产率为90%。
Claims (3)
1.一种PbS纳米带,其特征是:它是宽为20~80nm,长宽比为50~20的PbS纳米带。
2.根据权利要求1所述的PbS纳米带,其特征是它为立方相结构的PbS纳米带。
3.一种制备上述PbS纳米带的方法,其特征是:将醋酸铅、单质硫、氢氧化钠以物质的量之比为2∶3~4∶6~9的比例加到乙醇中,在恒温槽中在60~70℃反应2~6小时,反应结束后,有大量黑色沉淀产生,冷却至室温,离心分离,沉淀用蒸馏水、乙醇和丙酮依次洗涤,将所得的沉淀物置于室温和空气中自然晾干,得到黑色粉末,即为本发明的PbS纳米带。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100347089C (zh) * | 2006-01-19 | 2007-11-07 | 清华大学 | 一种硫化铅纳米块的合成方法 |
CN100383048C (zh) * | 2005-09-15 | 2008-04-23 | 清华大学 | 一种制备硫化物纳米粒子的方法 |
CN100384740C (zh) * | 2006-10-13 | 2008-04-30 | 中国科学院上海硅酸盐研究所 | 半胱氨酸类生物分子辅助自组装制备铅的硫族化合物纳米管的方法 |
CN101792930B (zh) * | 2009-10-16 | 2011-12-21 | 电子科技大学 | 一种(200)择优取向硫化铅薄膜的制备方法 |
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2004
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100383048C (zh) * | 2005-09-15 | 2008-04-23 | 清华大学 | 一种制备硫化物纳米粒子的方法 |
CN100347089C (zh) * | 2006-01-19 | 2007-11-07 | 清华大学 | 一种硫化铅纳米块的合成方法 |
CN100384740C (zh) * | 2006-10-13 | 2008-04-30 | 中国科学院上海硅酸盐研究所 | 半胱氨酸类生物分子辅助自组装制备铅的硫族化合物纳米管的方法 |
CN101792930B (zh) * | 2009-10-16 | 2011-12-21 | 电子科技大学 | 一种(200)择优取向硫化铅薄膜的制备方法 |
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