CN1588666A - Top luminous organic luminous diode structure and its producing method - Google Patents
Top luminous organic luminous diode structure and its producing method Download PDFInfo
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- CN1588666A CN1588666A CN 200410057773 CN200410057773A CN1588666A CN 1588666 A CN1588666 A CN 1588666A CN 200410057773 CN200410057773 CN 200410057773 CN 200410057773 A CN200410057773 A CN 200410057773A CN 1588666 A CN1588666 A CN 1588666A
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Abstract
The top lighting type organic LED structure consists of a reflecting electrode on base board, a dielectric layer with at least a first slot on the reflecting electrode, an organic lighting layer filled ni first slot on the dielectric layer and a metal electrode with at least a second slot on the organic lighting layer, the second slot is corresponding to the first slot.
Description
Technical field
The present invention relates to top luminous organic diode (top emitting OLED) structure and preparation method thereof, and be particularly related to the have luminous aperture top luminous organic diode structure and preparation method thereof of (lighting aperture).
Background technology
Organic Light Emitting Diode (OLED) assembly is to utilize irradiative characteristic when organic thin-film material is excited by electric current, and is widely used in for example field of flat-panel screens.The OLED assembly is normally by an anode, a negative electrode and be sandwiched in the sandwich structure that an organic film is therebetween constituted.In active matric OLED assembly, the OLED structure can be divided into two kinds, and a kind of is end light emitting-type (bottomemitting) OLED structure, and another kind is top light emitting-type (top emitting) OLED structure.The influence that the light of being launched owing to end light emitting-type OLED structure can be subjected to thin-film transistor (TFT) structure on the substrate reduces aperture opening ratio (aperture ratio), so industry is considered as a kind of structural design that development potentiality is arranged very much with top light emitting-type OLED structure recently.
See also Fig. 1, it is for showing the generalized section of prior art top light emitting-type OLED structure.The top light emitting-type OLED structure 100 of prior art comprises a reflecting electrode 120 that is used as anode, is formed in the substrate 110; One organic luminous layer 130 is formed on this reflecting electrode; And a transparent metal electrode 140 that is used as negative electrode, be formed on this organic luminous layer 130.What will specify here is, in order to guarantee to allow light pass through, this transparent metal electrode 140 must be suitable thin (less than 50 ), yet this can make the resistance of this metal electrode 140 raise and reduce electron mobility (electronmobility), thereby influence the operating characteristics of assembly.
In addition, these metal electrode 140 meeting absorption portion are from the light of this organic luminous layer 130, and the reduction luminous efficiency.In addition, this metal electrode 140 also can the reflecting part from the light of this organic luminous layer 130, cause microresonator (micro-cavity) effect and the luminous efficiency that reduces.
At United States Patent (USP) the 6th, 670, disclosed a kind of top light emitting-type OLED structure in No. 772.This OLED structure promotes luminous efficiency by metal electrode being made periodic grid structure (grating structure).
At United States Patent (USP) the 6th, 366, in No. 017, disclosed a kind of top light emitting-type OLED structure.(distributedBragg reflector DBR), and promotes luminous efficiency to this OLED structure by configuration one distributed Bragg reflection plate on metallic cathode.
At United States Patent (USP) the 5th, 115, in No. 442, disclosed a kind of top light emitting-type laser structure.This method makes the active area in the laser structure have the zone of different levels of doping, thereby forms an aperture in laser structure.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of top luminous organic diode structure and preparation method thereof.
For achieving the above object, the invention provides a kind of top luminous organic diode structure, comprising: a substrate; One first electrode is positioned in this substrate; Dielectric layer with at least one first opening is positioned on this first electrode; One organic luminous layer is arranged on this dielectric layer and inserts this first opening; And one second electrode with at least one second opening, be positioned on this organic luminous layer, wherein this second opening is corresponding to this first opening.
For achieving the above object, the present invention also provides a kind of manufacture method of top luminous organic diode structure, comprises the following steps: to provide a substrate; Form one first electrode in this substrate; Formation has a dielectric layer of at least one first opening on this first electrode; One organic luminous layer of formation order and is inserted in this first opening on this dielectric layer; And form have at least one second opening one second electrode on this organic luminous layer, wherein this second opening is corresponding to this first opening.
The present invention forms the dielectric layer with first opening by going up at first electrode (that is: anode), and forms second electrode (that is: negative electrode) with second opening on organic luminous layer, and wherein second opening is corresponding to first opening.So, the light that the invention enables the OLED structure to be produced penetrates from second opening, reduces resistance with regard to increasing so be positioned at the thickness of the negative electrode of emission side.In addition, the electron stream that negative electrode comes can be guided by dielectric layer and be concentrated and inject the organic luminous layer that is arranged in first opening, makes current density promote and the increase luminous efficiency.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below:
Description of drawings
Fig. 1 is the generalized section that shows prior art top light emitting-type OLED structure; And
Fig. 2 is the generalized section that shows top of the present invention light emitting-type OLED structure.
Description of reference numerals:
100～prior art top light emitting-type OLED structure;
110～substrate;
120～reflecting electrode (anode);
130～organic luminous layer;
140～transparent metal electrode (negative electrode);
200～top of the present invention light emitting-type OLED structure;
210～substrate;
220～reflecting electrode (anode);
230～hole injection layer;
240～hole transmission layer;
250～dielectric layer;
252～the first openings;
260～organic luminous layer;
270～electron transfer layer;
280～opaque metal electrode (negative electrode);
282～the second openings;
290～protective layer;
292～electron stream;
294～light.
Embodiment
See also Fig. 2, it is for showing the generalized section of top of the present invention light emitting-type OLED structure 200.Top of the present invention light emitting-type OLED structure 200 comprises at least: a substrate 210; One first electrode (that is: anode anode) 220 is positioned in this substrate 210; Dielectric layer 250 with at least one first opening 252 is positioned on this anode 220; One organic light emission (organic light emitting) layer 260 is arranged on this dielectric layer 250 and inserts this first opening 252; And one second electrode (that is: negative electrode cathode) 280 with at least one second opening 282, be positioned on this organic luminous layer 260, wherein this second opening 282 is corresponding to this first opening 252.
In the present embodiment, according to the manufacture craft needs, top of the present invention light emitting-type OLED structure 200 also can comprise a hole injection layer 230 and a hole transmission layer 240, is sandwiched between this anode 220 and this dielectric layer 250.In addition, it also can comprise an electron transfer layer 270, is sandwiched between this negative electrode 290 and this organic luminous layer 260.In addition, corrode assembly, can form a protective layer 290 and cover this negative electrode 280 and this second opening 282 for fear of aqueous vapor.
Then, illustrate the manufacture method of top of the present invention light emitting-type OLED structure 200.At first, form this anode 220 in this substrate 210.This substrate 210 for example comprises an array substrate (array substrate) of thin-film transistor (TFT, not icon).This anode 220 for example is by vapour deposition method or the reflector with high work function (work function) that sputtering method formed, and its material for example is platinum (Pt), palladium (Pd), iridium (Ir), gold (Au), tungsten (W), nickel (Ni), silver (Ag) or aluminium (Al).
Then, can in regular turn this hole injection layer 230 be formed on this anode 220 with this hole transmission layer 240 according to the manufacture craft needs.This hole injection layer 230 and a hole transmission layer 240 are formed by vacuum vapour deposition, the material of this hole injection layer 230 for example is a m-MTDATA (pi-conjugated molecule-4,4 ', three idol (3-aminomethyl phenyl aniline) triphenylamines), and this hole transmission layer 240 for example is NPB (organic molecule material of a nitrogenous element) layer 4 ".
Then, formation has this dielectric layer (or title insulating barrier) 250 of at least one first opening 252 on this hole transmission layer 240.This dielectric layer 250 for example is by deposition and defined silica of photoetching etching program and/or silicon nitride layer.Above-mentioned photoetching etching program preferably adopts isotropic etching (for example wet etching), makes the sidewall of this first opening 252 be landslide (slide) shape.
Then, this organic luminous layer 260 of formation order and is inserted in this first opening 252 on this dielectric layer 250.This organic luminous layer 260 is formed by vacuum vapour deposition, and its material is for being added with the organic material of alloy (dopant).The material of this organic luminous layer 260 for example has been disclosed in United States Patent (USP) the 4th, 769, and No. 292, the 5th, 935, No. 721, the 6th, 670, in No. 772 and other pertinent literature, be this pattern characteristics of avoiding confusion, will not discuss at this.
Then, can this electron transfer layer 270 be formed on this organic luminous layer 260 according to the manufacture craft needs.This electron transfer layer 270 is formed by vacuum vapour deposition, and its material for example is Alq (an aluminium misfit thing).
Then, this negative electrode 280 that formation has at least one second opening 282 is on this electron transfer layer 270, and wherein this second opening 282 is corresponding to this first opening 252.This negative electrode 280 for example is by the metal level that is steaming or sputter program and photoetching etching program are defined, and its material for example is aluminium (Al), gold (Au) or platinum (Pt).Above-mentioned photoetching etching program preferably adopts isotropic etching (for example wet etching), makes the sidewall of this second opening 282 be landslide (slide) shape.In addition, the aperture area of this second opening 282 can be less than the aperture area of this first opening 252, and the light that organic luminous layer 260 is sent is concentrated and the increase emittance.
Here wanting ben is, owing to can scatter out from second opening 282 from the light of organic luminous layer 260, so the thickness of negative electrode 280 of the present invention can be increased to opaque thickness (for example more than 1000 ), thereby can have and reduce resistance significantly and promote the electronics mobility, and improve assembly property.
In addition, corrode assembly, can form a protective layer 290 again and cover this negative electrode 280 and this second opening 282 for fear of aqueous vapor.This protective layer for example is by sedimentation or formed silica of spin-coating method and/or silicon nitride layer.
Still see also Fig. 2, the operator scheme of top of the present invention light emitting-type OLED structure 200 is described.When applying a voltage between anode 220 and the negative electrode 280,280 injected electrons of negative electrode stream 292 can be concentrated on by these dielectric layer 250 guidings the position in first opening 252 this organic luminous layer 260 and make it luminous 294, thereby make current density promote and increase luminous efficiency.And the invention enables luminous 294 regional centralized is second opening 282 in bright dipping aperture being used as, and increases light transmittance.
Feature of the present invention and advantage
The present invention is characterised in that: form the dielectric layer with first opening by going up at first electrode (that is: anode), and form second electrode (that is: negative electrode) with second opening on organic luminous layer, wherein second opening is corresponding to first opening.
According to the present invention, making only penetrating from second opening that OLED structure of the present invention produced increases light transmittance so can improve prior art resonant cavity effect.Also have, the invention enables the thickness of the negative electrode that is positioned at emission side to increase and reduce resistance, thereby improve assembly property.In addition, the invention enables the electron stream of negative electrode can be guided by dielectric layer and concentrate to inject and be arranged in the organic luminous layer of first opening, thereby make current density promote and increase luminous efficiency.
Though the present invention with preferred embodiment openly as above; yet; it is not in order to limit scope of the present invention; those skilled in the art; under the prerequisite of the spirit and scope that do not break away from the present invention; certainly can do some and change and retouching, so protection scope of the present invention should be as the criterion with the scope that appended claims was defined.
Claims (18)
1. top luminous organic diode structure comprises:
One substrate;
One first electrode is positioned in the described substrate;
One dielectric layer has at least one first opening, is positioned on described first electrode;
One organic luminous layer is arranged on the described dielectric layer and inserts described first opening; And
One second electrode has at least one second opening, is positioned on the described organic luminous layer, and wherein said second opening is corresponding to described first opening.
2. top luminous organic diode structure as claimed in claim 1 wherein also comprises a protective layer that is covered in described second electrode and described second opening.
3. top luminous organic diode structure as claimed in claim 1, wherein said substrate bag comprises an array substrate of thin-film transistor.
4. top luminous organic diode structure as claimed in claim 1, wherein said first electrode is used as a reflecting electrode of anode.
5. top luminous organic diode structure as claimed in claim 4 wherein also comprises:
One hole injection layer and a hole transmission layer are sandwiched between described reflecting electrode and the described dielectric layer.
6. top luminous organic diode structure as claimed in claim 1, wherein said dielectric layer comprises silica and/or silicon nitride.
7. top luminous organic diode structure as claimed in claim 1, wherein said second electrode are used as an opaque metal electrode of negative electrode.
8. top luminous organic diode structure as claimed in claim 7 wherein also comprises:
One electron transfer layer is sandwiched between described opaque metal electrode and the described organic luminous layer.
9. top luminous organic diode structure as claimed in claim 1, wherein said second aperture area is less than described first aperture area.
10. the manufacture method of a top luminous organic diode structure comprises the following steps:
One substrate is provided;
Form one first electrode in described substrate;
Formation has a dielectric layer of at least one first opening on described first electrode;
The organic luminous layer that formation is complied with and is inserted in described first opening on described dielectric layer; And
Formation has one second electrode of at least one second opening on described organic luminous layer, and wherein said second opening is corresponding to described first opening.
11. the manufacture method of top luminous organic diode structure as claimed in claim 10 wherein also comprises forming a protective layer and covering described second electrode and described second opening.
12. the manufacture method of top luminous organic diode structure as claimed in claim 10, wherein said substrate comprise an array substrate of thin-film transistor.
13. the manufacture method of top luminous organic diode structure as claimed in claim 10, wherein said first electrode is used as a reflecting electrode of anode.
14. the manufacture method of top luminous organic diode structure as claimed in claim 13 comprises also that wherein formation one hole injection layer and a hole transmission layer are between described reflecting electrode and described dielectric layer.
15. the manufacture method of top luminous organic diode structure as claimed in claim 10, wherein said dielectric layer comprises silica and/or silicon nitride.
16. the manufacture method of top luminous organic diode structure as claimed in claim 10, wherein said second electrode are used as an opaque metal electrode of negative electrode.
17. the manufacture method of top luminous organic diode structure as claimed in claim 16 wherein also comprises forming an electron transfer layer between described opaque metal electrode and described organic luminous layer.
18. the manufacture method of top luminous organic diode structure as claimed in claim 10, wherein said second aperture area is less than described first aperture area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410057773XA CN100359711C (en) | 2004-08-17 | 2004-08-17 | Top luminous organic luminous diode structure and its producing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410057773XA CN100359711C (en) | 2004-08-17 | 2004-08-17 | Top luminous organic luminous diode structure and its producing method |
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| CN1588666A true CN1588666A (en) | 2005-03-02 |
| CN100359711C CN100359711C (en) | 2008-01-02 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104851980B (en) * | 2014-02-13 | 2017-02-08 | 上海和辉光电有限公司 | Full-color organic light-emitting diode structure |
| CN111785819A (en) * | 2020-06-29 | 2020-10-16 | 厦门大学 | GaN-based narrow-band emission resonant cavity light-emitting diode and manufacturing method thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5115442A (en) * | 1990-04-13 | 1992-05-19 | At&T Bell Laboratories | Top-emitting surface emitting laser structures |
| KR100244185B1 (en) * | 1997-09-18 | 2000-02-01 | 구자홍 | Organic electroluminescence device and method for fabricating the same |
| CN1084055C (en) * | 1998-01-06 | 2002-05-01 | 中国科学院半导体研究所 | Efficient LED and its making method |
| EP1196955A1 (en) * | 1999-07-19 | 2002-04-17 | Uniax Corporation | Long-lifetime polymer light-emitting devices with improved luminous efficiency and radiance |
| TW490997B (en) * | 2000-03-31 | 2002-06-11 | Seiko Epson Corp | Method of manufacturing organic EL element, and organic EL element |
| CN1505167A (en) * | 2002-11-28 | 2004-06-16 | 友达光电股份有限公司 | Process for mending active organic light-emitting diode |
-
2004
- 2004-08-17 CN CNB200410057773XA patent/CN100359711C/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104851980B (en) * | 2014-02-13 | 2017-02-08 | 上海和辉光电有限公司 | Full-color organic light-emitting diode structure |
| CN111785819A (en) * | 2020-06-29 | 2020-10-16 | 厦门大学 | GaN-based narrow-band emission resonant cavity light-emitting diode and manufacturing method thereof |
| CN111785819B (en) * | 2020-06-29 | 2021-09-07 | 厦门大学 | GaN-based narrow-band emission resonant cavity light-emitting diode and manufacturing method thereof |
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| CN100359711C (en) | 2008-01-02 |
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