CN1588659A - N-pin structure semiconductor luminous diode - Google Patents
N-pin structure semiconductor luminous diode Download PDFInfo
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- CN1588659A CN1588659A CNA2004100692437A CN200410069243A CN1588659A CN 1588659 A CN1588659 A CN 1588659A CN A2004100692437 A CNA2004100692437 A CN A2004100692437A CN 200410069243 A CN200410069243 A CN 200410069243A CN 1588659 A CN1588659 A CN 1588659A
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- 239000004065 semiconductor Substances 0.000 title abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims description 16
- 239000002800 charge carrier Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 abstract description 24
- 230000012010 growth Effects 0.000 abstract description 12
- 239000002184 metal Substances 0.000 description 21
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 230000034655 secondary growth Effects 0.000 description 1
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Abstract
The n-pin structure semiconductor LED consists of longitudinal stacked upper ohm contact electrode, P type upper limit layer, red or blue lighting region, n type lower limit layer, substrate and lower ohm contact electrode. The characteristic is longitudinal arranged n-current spreading layer and tunnel junction between upper ohm contact electrode and p type upper limit layer. By the invention, thickness of current spreading layer is reduced, once epitaxial growth is realized, component prodn. process of GaN LED is simplified.
Description
Technical field
N-pin structure semiconductor luminous diode (LED) belongs to field of semiconductor photoelectron technique.
Background technology
Light-emitting diode is long owing to its life-span, the efficient height, and volume is little, and outstanding features such as environmental protection are widely used in the information indication, and aspects such as information demonstration and information transmission particularly aspect white-light illuminating, have shown huge market potential and application prospect.Ruddiness and the blue light-emitting diode that is prepared by AlGaInP/GaAs material system and GaN sill system respectively become most effective ruddiness and blue light-emitting diode at present.
According to the operation principle of light-emitting diode, its basic layer structure is mainly the p-i-n heterostructure, i.e. p type upper limiting layer, and i type luminous zone and n type lower limit layer, the thickness of p type upper limiting layer is less than 1 micron usually.But because the limit doping content of p type upper limiting layer is relatively low, as for p-AlInP, limit doping content is generally 5 * 10
17Cm
-3The effect extending transversely of charge carrier is very little, the charge carrier that is injected into the luminous zone mainly concentrates under the electrode, the light that sends accordingly also mainly concentrates under the metal electrode, usually metal electrode is of a size of 100 microns, thickness is about 1 micron, and therefore by the light-emitting diode of this layer structure preparation, most of light that send the luminous zone will be sponged by thick metal electrode.Electric current is concentrated under electrode, makes current density increase, and according to Joule law, heating increases, and makes the thermal characteristics of device degenerate.
For being increased in luminous beyond the p type electrode, reduce the influence that electrode absorbs, modern light-emitting diode increases p type current extending on above-mentioned basic structure, or the highly doped semi-conducting material of direct growth, form the p-pin structure, perhaps adopt thin metal level, form the m-pin structure, strengthen current expansion, improve the light-emitting diode extraction efficiency, improve the thermal characteristics of device.The layer structural representation of modern conventional AlGaInP/GaAs base red light-emitting diode as shown in Figure 1 and GaN base blue light diode shown in Figure 2, wherein red light-emitting diode be on the substrate from down and on growing n-type lower limit layer 6 successively, emitting red light district 5, p type upper limiting layer 4, with p-current extending 9, respectively preparing p type electrode 1 on the p-current extending 9 and prepare n type electrode 8 on substrate 7, add electric current simultaneously between p type electrode 1 and n type electrode 8 then, device sends ruddiness.Blue light-emitting diode be on the substrate from down and on growing n-type lower limit layer 6 successively, blue-light-emitting district 5, p type upper limiting layer 4, (about 5nm) metal level that deposit one deck is thin on p type upper limiting layer 4 is as p-current extending 9 again, preparing p type electrode 1 on the p-current extending 9 and preparation n type electrode 8 on substrate 7 respectively then, simultaneously add electric current between p type electrode 1 and n type electrode 8, device sends blue light.
But for red light-emitting diode, because the doping limit of p type current extending is relatively low, carrier mobility is little, is about 120cm as the mobility of p-GaP
2/ Vs for obtaining charge carrier expansion effect preferably, needs the very thick current extending of growth.What Fig. 3 showed is that wavelength is 595nm, injection current is that the output of light relatively of AlGaInP light-emitting diode after the encapsulation of 20mA and the Theoretical Calculation and the experiment of p-GaP current expansion layer thickness concern, as can be seen, the thickness of good current extending often need be at 50～60 microns.The preparation of this light-emitting diode needs luminous zone and the limiting layer part of elder generation with the method growth elder generation growth front of Organometallic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) in actual production, use other growth apparatus again instead, as adopt the current extending of vapour phase epitaxial grow thick, carry out diauxic growth.The production cost height of this preparation method own, and the interface can cause a lot of problems when carrying out secondary epitaxy.
For blue light-emitting diode, owing to be subjected to the restriction of the Mg doped p type GaN carrier concentration limit, what current extending adopted usually is metal level, the good conductivity of metal, can make the electric current that injects evenly distribute at active area, make the light beyond the p type electrode 1 can shine the surface, but metal have very strong absorption for visible light.For balanced balanced current expansion with absorb the two contradiction, people can only adopt thin metal level as current extending.Obviously, adopt thin metal layer as current extending, can not obtain good current expansion, also introduced absorption loss, usually 50% loss is arranged approximately, this also is to claim that this layer thin metal layer is the reason of semitransparent layer why.The current extending of this method preparation greatly reduces the brightness of device, and does not obtain good current expansion effect.
Summary of the invention
The object of the present invention is to provide a kind of n-pin structure, be applicable to the preparation method of the blue light-emitting diode of the ruddiness of AlGaInP/GaAs material system and GaN sill system, by introducing the tunnel knot, original p type or metal current extending are converted to n type current extending, and being about to original p-pin or m-pin Structure Conversion is the n-pin structure.Because the carrier mobility of n N-type semiconductor N material is higher than p type mobility of charge carrier rate far away, (mobility as n-GaP is 150cm
2/ Vs, and the mobility of p-GaP is about 120cm
2/ Vs; The mobility of n-GaN is about 300～500cm
2/ Vs, and the mobility of p-GaN is about 3～5cm
2/ Vs), according to formula
l
sBe the diffusion length of charge carrier, u is the mobility of charge carrier rate.As can be seen, the increase of carrier mobility has increased the diffusion length of charge carrier greatly, has strengthened expansion effect, has improved light extraction efficiency; Accordingly,, can reduce the thickness of current extending greatly, and can realize extension one secondary growth, reduce production costs for reaching identical charge carrier expansion effect; Meaning for the GaN based light-emitting diode is more obvious, and the metal current extending that is about to original strong absorption is converted to transparent semi-conducting material as current extending, and this will increase light extraction efficiency greatly; P type current expansion layer material is converted to n N-type semiconductor N material, particularly for the growth of n-GaN material, reduces the growth difficulty of material greatly; The p section bar material that will be used to prepare electrode is converted to n section bar material, because the ratio ohmic contact resistance (～10 of n type
-8Ω cm) is far smaller than the p type than ohmic contact resistance (～10
-5Ω cm), can reduce the heating and the pressure drop that cause by ohmic contact greatly, simultaneously can be so that two kinds of original electrode materials, be reduced to and have only a kind of electrode material, for the GaN light-emitting diode, also can prepare two electrodes up and down simultaneously, simplified the device preparation technology step.
The light-emitting diode of n-pin structure of the present invention, as shown in Figure 4 and Figure 5, include vertically stacked last Ohm contact electrode 1, p type upper limiting layer 4, luminous zone 5, n type lower limit layer 6, substrate 7 and following Ohm contact electrode 8, it is characterized in that, also include and be located between Ohm contact electrode 1 and the p type upper limiting layer 4 n-current extending 2 that vertically is arranged in order and tunnel junction 3.
The thickness of the n-current extending 2 among the present invention is 1～50um.
But the thickness of n-current extending 2 of the present invention and tunnel junction 3 thickness are selected just to realize the present invention better, are not essential features, and the selection of its material belongs to known technology.
By between upper and lower Ohm contact electrode 1 and 8, adding electric current, realize the conversion in electronics and hole at the tunnel junction place by the charge carrier that Ohm contact electrode 1 injects, the hole is injected into luminous zone and following Ohm contact electrode injected electrons together, carry out radiation recombination, send ruddiness or blue light.
The material of the n-current extending 2 among the present invention for red light-emitting diode, only need be converted to the n type with the material of original p-current extending and get final product; For blue light-emitting diode, can adopt GaN.
The effect of the tunnel junction 3 among the present invention mainly is to convert the hole to from Ohm contact electrode 1 injected electrons, because tunnel junction is heavy doping, further plays the effect of current expansion simultaneously.
The structure of the luminous zone of ruddiness of the present invention or blue light is a PN junction, or the PIN knot, or double-heterostructure, or single quantum, or multi-quantum pit structure, or the multiple-active-region cascade structure, or the quantum dot light emitting structure.
Substrate 7 among the present invention for red light-emitting diode, can be GaAs; For blue light diode, can be sapphire, SiC, ZnO or other dielectric layer.
Fig. 4 and n-pin structure shown in Figure 5 that the present invention proposes are a basic feature structure, can increase other layers on its basis, increase the luminous efficiency of device or the growth quality of raising material.As for red light-emitting diode, between substrate 7 and n type lower limit layer, increase Bragg mirror (DBR), increase light extraction efficiency.
The device implementation method of the light-emitting diode of the n-pin structure as shown in Figure 4 and Figure 5 that the present invention proposes can have several different methods, can adopt the preparation method of conventional light-emitting diode as shown in Figure 4 and Figure 5; Also can adopt the method for bonding, change the GaAs substrate that absorbs into transparent GaP substrate or Si substrate; Also can adopt the method for laser lift-off, Sapphire Substrate be changed into methods such as Cu substrate.
Compare with traditional p-pin structure red light-emitting diode shown in Figure 1, the red light-emitting diode of n-pin structure can reduce the thickness of current extending greatly, makes two kinds of electrode materials be reduced to a kind of n type electrode, has reduced production cost.
Compare with traditional m-pin structure blue light light-emitting diode shown in Figure 2, the blue light-emitting diode of n-pin structure can replace with the metal current extending of original strong absorption transparent n N-type semiconductor N current extending, improves device brightness; Because two kinds of metal electrodes are reduced to a kind of metal electrode material, can be prepared together simultaneously, simplify the prepared process greatly.
Description of drawings
Fig. 1: the layer structural representation of the red light-emitting diode of conventional p-pin structure;
Among the figure: 1, go up Ohm contact electrode, 9, current extending, 4, p type upper limiting layer, 5, the luminous zone, 6, n type lower limit layer, 7, substrate, 8, Ohm contact electrode down;
Fig. 2: the layer structural representation of the blue light-emitting diode of conventional m-pin structure;
Among the figure: 1, go up Ohm contact electrode, 9, current extending, 4, p type upper limiting layer, 5, the luminous zone, 6, n type lower limit layer, 7, substrate, 8, Ohm contact electrode down;
Fig. 3: the relation of the relative luminous intensity of the AlGaInP light-emitting diode of standard packaging and GaP current expansion layer thickness.
Fig. 4: the layer structural representation of n-pin structure red light-emitting diode of the present invention;
Among the figure: 1, go up Ohm contact electrode, 2, the n-current extending, 3, tunnel junction, 4, p type upper limiting layer, 5, the luminous zone, 6, n type lower limit layer, 7, substrate, 8, Ohm contact electrode down;
Fig. 5: the layer structural representation of n-pin structure blue light light-emitting diode of the present invention;
Among the figure: 1, go up Ohm contact electrode, 2, the n-current extending, 3, tunnel junction, 4, p type upper limiting layer, 5, the luminous zone, 6, n type lower limit layer, 7, substrate, 8, Ohm contact electrode down;
Fig. 5: the structural representation of the embodiment of the invention 1;
Fig. 6: the structural representation of the embodiment of the invention 2.
Embodiment
Embodiment 1:
As shown in Figure 5, the implementation method of n-pin structure red light-emitting diode is as follows:
1, use common metal organic chemistry vapour phase deposit (MOCVD) method at n
+Epitaxial growth n-AlInP lower limit layer 6, AlGaInP heterojunction luminous zone 5, p-AlInP upper limiting layer 4 successively on the-GaAs substrate 7, p
+-GaAs/n
+-GaAs tunnel junction 3 and n-GaP current extending 2;
2, adopt Ka Er Hughes (Karl Suss) mask aligner, make mask pattern by lithography.
3, by conventional method of evaporating, Ohm contact electrode 1 Au/Ge/Ni/Au in the evaporation of front;
4, adopt the conventional method of peeling off, only have metal to stay at Ohm contact electrode 1 place;
5, the mechanochemistry corroding method by routine is thinned to 100 μ m with sample;
6,, on substrate 7, evaporate Ohm contact electrode 8 Au/Ge/Ni/Au up and down again according to common process;
7, above-mentioned sample is put into 500 ℃ high temperature furnace, fed N
2, 5 minutes, the Ohm contact electrode of metal up and down 1 and 8 of deposit is carried out the common process alloy.
8,, obtain n-pin structure red light-emitting diode of the present invention according to the common process cleavage.
Embodiment 2:
As shown in Figure 7, the implementation method of n-pin structure blue light light-emitting diode is as follows
1, with common metal organic chemistry vapour phase deposit (MOCVD) method epitaxial growth n-GaN lower limit layer 6, InGaN/GaN quantum well radiation district 5, p-GaN upper limiting layer 4 successively on Sapphire Substrate 7, p
+-InGaN/n
+-InGaN tunnel junction 3 and n-GaN current extending 2;
2, adopt conventional Ka Er Hughes (Karl Suss) mask aligner, make mask pattern by lithography, be used for dry etching;
3, adopt Oxford (Oxford) ICP-100 that sample is etched mesa structure to n-GaN lower limit layer 6 places, etching gas is chlorine and argon gas, and etch period 10 minutes, etching depth are 600 nanometers;
4,, obtain the shape of upper and lower Ohm contact electrode 1 and 8 according to the common process photoetching;
5, adopt the conventional evaporation or the method for sputter, prepare upper and lower Ohm contact electrode Ti/Al/Ti/Au 1 and 8 simultaneously;
6, according to common process, above-mentioned sample is put into 800 ℃ high temperature furnace, feed N
2, 1 minute, with the upper and lower metal Ohm contact electrode 1 and 8 alloys of deposit;
7, according to common process substrate 7 is thinned to 90um;
8, according to common process, adopt the SS40 laser scribing means of New Wave, sample is scratched;
9, according to common process, adopt the sliver machine of length Lip river company, sample is split, obtain n-pin structure blue light light-emitting diode of the present invention.
The invention has been finished purpose of the present invention through the enforcement of such scheme.
Claims (3)
1, the light-emitting diode of n-pin structure, as shown in Figure 4 and Figure 5, include vertically stacked last Ohm contact electrode (1), p type upper limiting layer (4), redness or blue-light-emitting district (5), n type lower limit layer (6), substrate (7) and following Ohm contact electrode (8), be characterised in that, also comprise between Ohm contact electrode (1) and the p type upper limiting layer (4), n-current extending (2) that vertically is arranged in order and tunnel junction (3).
2, the light-emitting diode of n-pin structure according to claim 1, wherein the thickness of n-current extending (2) is 1～50um.
3, the light-emitting diode of n-pin structure according to claim 1, wherein tunnel junction (3) thickness is greater than the depletion widths of charge carrier, and the energy gap of material is greater than the energy gap of emission wavelength correspondence.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2004100692437A CN1588659A (en) | 2004-07-16 | 2004-07-16 | N-pin structure semiconductor luminous diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2004100692437A CN1588659A (en) | 2004-07-16 | 2004-07-16 | N-pin structure semiconductor luminous diode |
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|---|---|
| CN1588659A true CN1588659A (en) | 2005-03-02 |
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|---|---|---|---|
| CNA2004100692437A Pending CN1588659A (en) | 2004-07-16 | 2004-07-16 | N-pin structure semiconductor luminous diode |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101393951B (en) * | 2007-09-17 | 2010-06-02 | 广镓光电股份有限公司 | Optoelectronic element and manufacturing method therefor |
| CN101807633A (en) * | 2009-02-18 | 2010-08-18 | 大连美明外延片科技有限公司 | Luminous diode chip and manufacturing method thereof |
| CN102208503A (en) * | 2011-01-25 | 2011-10-05 | 中山大学佛山研究院 | Light-emitting diode (LED) epitaxial structure and manufacturing method thereof |
| CN101601142B (en) * | 2007-01-26 | 2012-02-08 | 奥斯兰姆奥普托半导体有限责任公司 | Semi-conductor chip and method for producing a semi-conductor chip |
| WO2012163130A1 (en) * | 2011-06-02 | 2012-12-06 | 中国科学院半导体研究所 | Gan-based vertical structure led applying graphene film current expansion layer |
| CN103078037A (en) * | 2012-08-03 | 2013-05-01 | 光达光电设备科技（嘉兴）有限公司 | Light-emitting diode (LED) epitaxial structure |
| CN103078020A (en) * | 2012-08-03 | 2013-05-01 | 光达光电设备科技（嘉兴）有限公司 | Light-emitting diode (LED) epitaxial structure |
| CN105449055A (en) * | 2015-12-22 | 2016-03-30 | 扬州乾照光电有限公司 | Series PN junction LED and production method thereof |
-
2004
- 2004-07-16 CN CNA2004100692437A patent/CN1588659A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101601142B (en) * | 2007-01-26 | 2012-02-08 | 奥斯兰姆奥普托半导体有限责任公司 | Semi-conductor chip and method for producing a semi-conductor chip |
| CN101393951B (en) * | 2007-09-17 | 2010-06-02 | 广镓光电股份有限公司 | Optoelectronic element and manufacturing method therefor |
| CN101807633A (en) * | 2009-02-18 | 2010-08-18 | 大连美明外延片科技有限公司 | Luminous diode chip and manufacturing method thereof |
| CN102208503A (en) * | 2011-01-25 | 2011-10-05 | 中山大学佛山研究院 | Light-emitting diode (LED) epitaxial structure and manufacturing method thereof |
| WO2012163130A1 (en) * | 2011-06-02 | 2012-12-06 | 中国科学院半导体研究所 | Gan-based vertical structure led applying graphene film current expansion layer |
| CN103078037A (en) * | 2012-08-03 | 2013-05-01 | 光达光电设备科技（嘉兴）有限公司 | Light-emitting diode (LED) epitaxial structure |
| CN103078020A (en) * | 2012-08-03 | 2013-05-01 | 光达光电设备科技（嘉兴）有限公司 | Light-emitting diode (LED) epitaxial structure |
| CN105449055A (en) * | 2015-12-22 | 2016-03-30 | 扬州乾照光电有限公司 | Series PN junction LED and production method thereof |
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