CN1581512A - Control of carrier density of semimetal field effect tube channel material using ion beam modifying technique - Google Patents
Control of carrier density of semimetal field effect tube channel material using ion beam modifying technique Download PDFInfo
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- CN1581512A CN1581512A CN 03134454 CN03134454A CN1581512A CN 1581512 A CN1581512 A CN 1581512A CN 03134454 CN03134454 CN 03134454 CN 03134454 A CN03134454 A CN 03134454A CN 1581512 A CN1581512 A CN 1581512A
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- China
- Prior art keywords
- field effect
- semimetal
- carrier density
- channel
- semi metal
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Abstract
Semi metal material BiSb graphite (containing carbon fiber and nano carbon tube) possesses characteristics: low resistivity (1-2 magnitudes higher than resistivity of copper) and low carrier density (N=1017-1019/cm3 , near to semiconductor magnitude). Based on characteristics of low carrier density and easy control, the disclosed material can be utilized to fabricate field effect tube in semi metal channel. It is advantages of semi metal that channel resistance of semi metal is lower than channel resistance of semiconductor in 2-3 magnitudes. In current condition, there are some difficulties for realizing switching function by using the said semi metal material. But, the disclosed solution scheme for reducing carrier density in semi metal channel locally through ion modification technique makes field effect tube in semi metal channel possible to realize switching characteristic.
Description
The present invention relates generally to a kind of semimetal field effect transistor, particularly the partial modification method of semimetal channel material can make the field effect transistor of various semimetal raceway grooves all realize switching characteristic.
The characteristics of semimetal (metalloid) material are electricalresistivity=10
-4～10
-5Ω cm is than the metal (ρ of copper=1.72 * 10
-6Ω cm) only big one or two magnitudes, but carrier density (N=10
17～10
19/ cm
3) but than copper (N=9 * 10
22/ cm
3) low 4～6 magnitudes.The N=2.7 of Bi * 10 for example
17/ cm
3ρ=1.16 * 10
-4Ω cm; Graphite monocrystalline N=10
18～10
19/ cm
3ρ=4 * 10
-5Ω cm.Therefore the unique property that can make full use of its carrier density low (being convenient to control with electrostatic field) while resistivity low (conduction loss is little) is done the semimetal field effect transistor.Go up " carbon nanometer transistor " civilian P11 page or leaf of being write by the He Yao of Inst. of Physics, CAS etc. of publication mentions in " micro-nano electronic technology " the 12nd phase in 2002: " in order to obtain the semiconductive nanotube, just metallic nanotubes must be destroyed.And in air, allow multi-walled carbon nano-tubes or nanotube bundle just can make by big electric current (about 200 μ A) that metallic nanotubes is oxidized to peel off, and the semiconductive nanotube so just can be had to the Single Walled Carbon Nanotube of semiconductive owing to be not damaged by the electric current in managing is very little." this is a kind of method of existing control conducting channel carrier density, this method only is suitable for carbon nano-tube.
Main purpose of the present invention provides a kind ofly has the method for permanent its carrier density of change of control to what all semimetals all were suitable at regional area, makes the various field effect transistor of making conducting channel with semimetal all have switching characteristic.
The present invention realizes " metal-insulator-metal field effect-transistor " (0110672.9) of Yang Jinyu and a kind of process that " metal-insulator-graphitized carbon field effect transistor " (0311425.X) invents.In the discussion in conjunction with the accompanying drawings, it is clearer that objects and advantages of the present invention will become below.1. is that to make the semi-metallic (such as Bi, Sb, graphite-carbon fiber-containing, carbon nano-tube, alloy, conducting polymer etc.) that the field effect transistor conducting channel uses 2. be the dielectric of high-dielectric coefficient high dielectric strength among the figure.3. be metallic film, be divided into G
1, G
2, G
3Be the control grid of field effect transistor, outer lead is all arranged.5. be the good conductor film, be divided into A, A
1, A
2And K, have only A and K that outer lead is arranged, make anode A and negative electrode K respectively.4. the expression ion beam carries out the local zone of injecting to the conducting channel material.From this figure, be not difficult to find: A-G
1-A
1A
1-G
2-A
2A
2-G
3-K is common FET structure.1. the conducting channel of top first FET among the figure; And 2. be the conducting channel of back to back second FET; 3. be the conducting channel of bottom the 3rd FET.In fact these three FET connect mutually and constitute an integral body, can improve withstand voltage.
We know that the working mechanism of field effect transistor is to utilize the electrostatic field of electric capacity that the principle of electronics or hole generation attraction or repulsion is controlled these charge carriers.The size of electrostatic field is with added maximum (deielectric-coating is not breakdown) voltage and select for use what dielectric material relevant, and general available specific volume is estimated.As SiO
2The specific volume of film is 50pf/mm
2, Al
2O
3Specific volume 280pf/mm
2, Ta
2O
5Specific volume 630pf/mm
2It is big that specific volume is illustrated under the same voltage electrostatic field force greatly, and controllable carrier number is just many.After deielectric-coating is selected, the carrier number n that field effect transistor can be controlled
MaxJust decided, because pairing carrier number=carrier density N * corresponding channel volume in the conducting channel below the capacitor plate, so the maximum carrier density N of channel material
MaxAlso just decided.If the carrier density of selected channel material is greater than N
Max, then the grid electrostatic field just can't be controlled these charge carriers entirely, the mentioned metallicity multi-walled carbon nano-tubes, can't realize switching function in the article of quoting previously.Can extrapolate controlled current carrying density from dielectric material commonly used at present and be roughly 10
17～10
18/ cm
3So 10
18～10
19/ cm
3Graphite and Sb can realize switching function? this is the problem to be solved in the present invention just.Solution is to manage the local graphite that changes, and the rerum natura one of Sb suitably reduces its carrier density (＜N
Max) satisfying the requirement that the positive negative electric field of grid can all repel these charge carriers of light (conducting channel by) or attract more charge carrier (reducing conducting resistance), thus realize switching function.
Ion beam material modification technology by the mid-1970s grows up can ideally realize this design.
Ion injects and to be meant that the ion of drawing from ion source makes ion obtain very high energy through the acceleration of accelerating tube accelerating potential, then enter magnetic analyzer and make the ion purifying, analyzing the back ion can quicken to improve energy of ions again, make the surface that is injected into material of even ion beam again through the bidimensional deflection scanner, can measure the quantity that injects ion beam accurately with the electric charge integrator, regulate and inject the injection degree of depth that energy of ions can be controlled ion accurately.The unusual suitable technique means really that ion of the present invention is injected.Because (1) it can inject different ions at different materials; (2) inject controllable number, inject depth controlled, injection zone is controlled and have very high precision and repeatability, and is highly beneficial to producing in enormous quantities.Certainly also need heat treatment to cooperate sometimes and could produce better effect.
Be that example is further described below with the carbon fiber: high modulus carbon fiber is made up of graphite microcrystal, and an axle of crystallite is arranged in parallel according to qualifications along the fiber axis height.This orientation is very beneficial for improving the conductance of carbon fiber.(electronics is little at the graphite layers resistance that runs a good foot when parallel direction moves, and vertically resistance is very big.Bi, Sb have similar characteristics).Past has the people to use heat, adds elements such as bromine, fluorine and forms the resistivity that intercalation compound can reduce graphite greatly.Our way is just in time opposite, hope is by adding some element that can fetter free electron in the graphite or compound, with the density (, in carbon fiber, generate highly stable SiC and just can effectively reduce the free electron density of this injection region) that reduces free electron such as injecting the Si positive ion beam to carbon fiber.Certainly, should inject different elements or compound, and can be a plurality of schemes to different materials.This local way that reduces charge carrier is fit to the Bi of semimetal very much, Sb graphite one carbon fiber-containing, and carbon nano-tube was because their carrier density was just fewer originally, relatively near maximum controlled carrier density N
Max, therefore reduce and the added value also not too large (and can attract more charge carrier to be compensated) of increase channel resistance by on grid, adding suitable voltage to the way of raceway groove by charge carrier.
Improving the field effect transistor performance in theory also must be from reducing contact resistance and reducing channel length and set about, the A of good conductor 5 and K are exactly in order further to reduce the contact resistance of anode negative electrode outer lead, can to inject elements such as niobium, tantalum, tungsten, titanium to carbon fiber with ion implantation at two ends and reduce the lead-out wire contact resistance in the accompanying drawing.And A
1And A
2Effect be in order further to reduce the all-in resistance of conducting channel, available if necessary ion implantation is achieved.Also can save A for the original lower material of resistivity such as carbon fiber, antimony
1And A
2, the channel resistance of current carrying density minimizing has bigger increase because injected by ion, will determine the series value of whole channel resistance.The minimizing channel length can reduce this part resistance one ion implantation technique and can accomplish this point easily.
Claims (2)
1. semimetal field effect transistor is characterized in that:
A. adopt bismuth, antimony, carbon fiber, carbon nano-tube, the conducting polymer of semimetal characteristic to make conducting channel;
B. field effect transistor adopts the structure of an anode, a negative electrode and a plurality of grids.
2. method of making the semimetal field effect transistor is characterized in that:
A. use the ion beam modification technology to being injected suitable element or compound, controlledly cause the current carrying density of this regional area permanently to reduce by the topped semimetal channel material of grid;
B. use the ion beam modification technology to being injected suitable element or compound, controlledly cause the carrier density of this regional area permanently to increase by the topped semimetal channel material of grid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03134454 CN1581512A (en) | 2003-08-01 | 2003-08-01 | Control of carrier density of semimetal field effect tube channel material using ion beam modifying technique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03134454 CN1581512A (en) | 2003-08-01 | 2003-08-01 | Control of carrier density of semimetal field effect tube channel material using ion beam modifying technique |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1581512A true CN1581512A (en) | 2005-02-16 |
Family
ID=34579070
Family Applications (1)
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|---|---|---|---|
| CN 03134454 Pending CN1581512A (en) | 2003-08-01 | 2003-08-01 | Control of carrier density of semimetal field effect tube channel material using ion beam modifying technique |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101094142B (en) * | 2007-06-22 | 2010-08-18 | 中兴通讯股份有限公司 | Operation process method and device of VDSL2 access device |
| CN101855938B (en) * | 2007-09-10 | 2012-05-02 | 佛罗里达大学研究基金公司 | Luminescent crystal and longitudinal field-effect transistors |
| CN105977255A (en) * | 2015-03-13 | 2016-09-28 | 台湾积体电路制造股份有限公司 | Devices having semiconductor material that is semimetal in bulk and methods of forming the same |
| US10089930B2 (en) | 2012-11-05 | 2018-10-02 | University Of Florida Research Foundation, Incorporated | Brightness compensation in a display |
-
2003
- 2003-08-01 CN CN 03134454 patent/CN1581512A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101094142B (en) * | 2007-06-22 | 2010-08-18 | 中兴通讯股份有限公司 | Operation process method and device of VDSL2 access device |
| CN101855938B (en) * | 2007-09-10 | 2012-05-02 | 佛罗里达大学研究基金公司 | Luminescent crystal and longitudinal field-effect transistors |
| US10089930B2 (en) | 2012-11-05 | 2018-10-02 | University Of Florida Research Foundation, Incorporated | Brightness compensation in a display |
| CN105977255A (en) * | 2015-03-13 | 2016-09-28 | 台湾积体电路制造股份有限公司 | Devices having semiconductor material that is semimetal in bulk and methods of forming the same |
| US10461179B2 (en) | 2015-03-13 | 2019-10-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Devices having a semiconductor material that is semimetal in bulk and methods of forming the same |
| US10818780B2 (en) | 2015-03-13 | 2020-10-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Devices having a semiconductor material that is semimetal in bulk and methods of forming the same |
| US11302804B2 (en) | 2015-03-13 | 2022-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Devices having a semiconductor material that is semimetal in bulk and methods of forming the same |
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