CN1580958A - Modulation of exposure duration and/or power to achieve gray-scaling in maskless photolithography - Google Patents
Modulation of exposure duration and/or power to achieve gray-scaling in maskless photolithography Download PDFInfo
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- CN1580958A CN1580958A CNA2004100588236A CN200410058823A CN1580958A CN 1580958 A CN1580958 A CN 1580958A CN A2004100588236 A CNA2004100588236 A CN A2004100588236A CN 200410058823 A CN200410058823 A CN 200410058823A CN 1580958 A CN1580958 A CN 1580958A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
In lithography applications, it is desirable to control, for example, a position or width of a printed line. An effective method of controlling these patterns and their resolution is by having as many grayscale levels as possible. The present invention comprises methods of grayscaling wherein modulation of the exposure time increases the number of grayscale levels on an object. In addition, the present invention comprises methods of grayscaling wherein modulating the power of an exposure beam provides additional grayscale levels.
Description
Technical field
The present invention relates generally to little Cheng Ying.More particularly, the present invention relates to the little Cheng Ying of maskless.
Background technology
Little Cheng Ying is in order to produce the technology of feature on substrate surface.These substrates are included in employed substrate in the manufacture process of flat-panel monitor (for example LCD), circuit board, various integrated circuit etc.The substrate that often uses during these are used is semiconductor wafer or glass substrate.Though only semiconductor wafer is described at this for exemplifying,, it will be understood by a person skilled in the art that this explanation also can be applied to the substrate of other type.
During little Cheng Ying, be disposed at wafer on the wafer station and can be exposed to exposure device in little one-tenth shadow equipment and be projeced into image on the wafer surface.Though under the situation of photoetching, use exposure device, can look application-specific and use dissimilar exposure devices.For example can require different exposure devices as the little Cheng Yingjun of x light, ion, electronics or photon known to those skilled in the art.The specific embodiment of little Cheng Ying that discuss in this place only is used for explanation.
The image of projection can change the characteristic of the layers such as for example photoresist layer that are deposited on the wafer surface.These change corresponding to the feature that is projected to wafer between exposure period.After exposure, described layer can be etched to produce patterned layer.This figure is corresponding to those features that are projected between exposure period on the wafer.Then use this patterned layer to remove or further to handle in the wafer for example exposed portion of the fabric layer of conductive layer, semiconductor layer or insulation course etc.Then repeat this technology and other step, till forming required feature on the surface at wafer or in the different layers.
Stepping and scanning technique cooperate the projection optical system with narrow imaging groove to work together.Each figure field of single pass is to wafer, rather than once makes the entire wafer exposure.By mobile wafer and graticule simultaneously so that the imaging groove can move through the figure field in scan period, to finish this step.Wafer station then must expose a plurality of copies of graticule pattern on wafer surface to the open air with permission between figure exposure in stepping asynchronously.In this way, the quality of projection on wafer can optimization.
Traditional little one-tenth shadow system and method forms image on semiconductor wafer.System has little one-tenth studio usually, and little one-tenth studio is designed to contain the device of the technology that carries out image forms on semiconductor wafer.Described chamber can be designed to have different mixed gass and vacuum tightness according to employed optical wavelength.Graticule is arranged at indoor.Light can be from radiation source (being located at the system outside) through the image outline on optical system, the graticule, and second optical system before interacting with semiconductor wafer.
Need a plurality of graticules on substrate, to make device.Because characteristic dimension and the required accurate tolerance of small-feature-size will make these graticule manufacturing costs and time increase.And graticule only can use one section special time before abrasion.If graticule not within certain tolerance or graticule when impaired, often needs the cost extra cost.Therefore, use the wafer manufacturing of graticule can become expensive and make us stepping back.
In order to overcome these shortcomings, developed the little one-tenth shadow of maskless (for example write direct, numeral etc.) system.The maskless system replaces graticule with spatial light modulator (SLM) (for example digital micro-mirror device (DMD), LCD (LCD) etc.).SLM comprises each controlled workspace array (for example mirror or transmission area) to form required pattern.In this technology, these workspaces are also referred to as " pixel ".According to the predetermined and previously stored deduction of required pattern in order to the control pixel.Each pixel among the SLM can change its optical characteristics (for example amplitude/phase transmission) is delivered to wafer surface with change dosage in a controlled manner.
In common embodiment, each pixel can present a state in the discrete state of finite population, and each state is corresponding to the gray processing of dosage to a certain degree.One of a lot of states that pixel has are corresponding to the pixel that does not transmit the light to exposure region.This state is called dark state or closed condition.Other state of pixel is corresponding to modulated pixel, so that this pixel can transmit the incident light of definite part to exposure region.In order to control impressing pattern (for example position of track or width), wish to have gray shade scale as much as possible.But obtainable number of grayscale levels is restricted because of following reason to I haven't seen you for ages by the number that increases discrete pixel status.
If the exposure that takes place during wafer scan and the short laser pulse is continuous, then when the pattern on the SLM usually must be in each laser pulse, upgrade once.If carry out exposure with continuous light source, but wafer is static or exposure stained during by compensation, upgrades pattern at least frequently between exposure period.As a result, must keep high data rate to SLM.The logarithm of the number of this message transmission rate and discrete state increases pro rata, and can cause pixel status number and gray shade scale limited in number for the restriction of the possible data transfer rate of maximum.
And the state with a large amount of numbers can make the control difficulty more of the design of SLM and state.
Therefore, the little one-tenth shadow of the maskless system and method that needs is obtained a large amount of gray shade scales with allowing, but does not increase the number of different pixels state.
Summary of the invention
The number that the present invention relates in illuminator, produce a large amount of gray shade scales but do not increase pixel status discrete in the described system.Therefore the feature (for example position of line or width) that system is printed provides accurate control.
In one embodiment, the invention provides the method for gray processing in the illuminator that comprises laser, wherein, the duration that changes laser pulse can provide extra gray shade scale.
In another embodiment, the invention provides the method for gray processing in the illuminator that comprises spatial light modulator (SLM), wherein, the duration that changes the pixel starting of SLM can provide extra gray shade scale.
In another embodiment again, the invention provides the method for gray processing in the illuminator, wherein, the variation of the power of exposure light can provide extra gray shade scale.
In another embodiment again of the present invention, employing laser pulse duration, pixel are started sequential, are reached the various combination of laser power.
Below with reference to accompanying drawing in detail embodiments of the invention, characteristics, and the structure and the operation of advantage and different embodiments of the invention are described in detail.
Description of drawings
Accompanying drawing is the part in the book as an illustration, in order to show the present invention, makes those skilled in the art can realize and use the present invention.
Fig. 1 illustrates the little one-tenth shadow of the maskless that has reflective SLM according to an embodiment of the invention system.
Fig. 2 illustrates the little one-tenth shadow of the maskless that has transmission-type SLM according to an embodiment of the invention system.
Fig. 3 illustrates SLM according to an embodiment of the invention.
Fig. 4 illustrates the more details of the SLM among Fig. 3.
Fig. 5 illustrates element according to an embodiment of the invention.
Fig. 6 is a process flow diagram, shows first embodiment according to gray processing method of the present invention, and wherein, the duration of laser pulse provides extra gray shade scale.
Fig. 7 is a process flow diagram, shows second embodiment according to gray processing method of the present invention, and wherein, the duration that changes the discrete state of pixel can provide extra gray shade scale.
Fig. 8 is a process flow diagram, shows the 3rd embodiment according to gray processing method of the present invention, and wherein, the power that changes laser pulse can provide extra gray shade scale.
Fig. 9 is a process flow diagram, shows the 4th embodiment according to gray processing method of the present invention, and wherein, change can provide extra gray shade scale from the power of each light beam of lighting source.
Figure 10 is a sequential chart, and the duration of the discrete state of display change pixel is to provide the embodiment of extra gray shade scale.
Figure 11 is a calcspar, represents an embodiment of projection optics element 110.
Figure 12 is a calcspar, represents the spendable example system of the present invention.
The present invention is described with reference to the accompanying drawings.In the code name of correspondence, it is graphic usually with the numeral of left that element occurs for the first time.
Embodiment
General introduction
Though specific planning and configuration are discussed,, should be appreciated that this only is the purpose that is used for explanation.It will be apparent to those skilled in the art that not deviating under spirit of the present invention and the scope, can use other planning and configuration.Art technology people is clearer, and the present invention also can be applied to other different application.
Embodiments of the invention provide the method for gray processing in the illuminators such as for example little one-tenth shadow machine.Can use this system and method to be printed on the control of features such as the position of for example line on the substrate or width, and keep the number of discrete pixel status with increase.
The little one-tenth shadow of maskless system
Fig. 1 illustrates the little one-tenth shadow of maskless system 100 according to an embodiment of the invention.System 100 comprises lighting source 102, is used for light via optical splitter 106 and SLM optical element 108 and be sent to reflective spatial light modulator (SLM) 104 (for example digital micro-mirror device (DMD), reflective liquid-crystal display (LCD) etc.).SLM 104 is used for light graphically to replace the graticule of traditional little one-tenth shadow system.Can pass through optical splitter 106 and projection optics element 110 from the patterned light of SLM 104 reflection, be written on the object 112 (for example substrate, semiconductor wafer, be used for the glass substrate of flat-panel monitor etc.).
Should be appreciated that, known ground, illumination optical device can be contained within the lighting source 102.Also should be appreciated that, known ground, SLM optical element 108 and projection optics element 110 can comprise any combination that photoconduction is caused the needed optical element of desired zone on SLM 104 and/or the object 112.
In alternate embodiment, can be coupled respectively to controller 114 and 116 among light source 102 and the SLM 104 one or both of, or form one with controller 114 and 116.Controller 114 can according to from the feedback of system 100 adjusting lighting source 102, or carry out and proofread and correct.Controller 116 also can be used for adjusting and/or proofreading and correct.Perhaps, controller 116 can be used to switch the pixel 302 on the SLM 104 so that they are switching (for example between one of the grey states and complete black or closed condition at them) (seeing also Fig. 3) between their the discrete state.This can produce in order to expose to the sun according to the pattern of object 112.Controller 116 can have the storer of one or be coupled to and has predetermined information and/or in order to the memory element (not shown) of the deduction that produces pattern.
Fig. 2 illustrates the little one-tenth shadow of maskless system 200 according to still another embodiment of the invention.System 200 comprises lighting source 202, is used for light is transmitted by SLM 204 (for example transmission type LCD etc.) so that light is graphical.Patterned light can be by projection optics element 210 to be written on pattern on the surface of object 212.In the present embodiment, SLM 204 is transmission-type SLM, for example LCD etc.As mentioned above, lighting source 202 and SLM 204 one or both of can be coupled respectively to controller 210 and 216, or form one with controller 210 and 216.Those skilled in the art understand, and controller 214 and 216 can be carried out the function that is similar to above-mentioned controller 114 and 116.
The SLM embodiment that can be used for system 100 or 200 is by Micronic LaserSystems AB of Sweden and Fraunhofer Institute for Circuits andSystems of Germany manufacturing.
For ease of explanation, below incite somebody to action only frame of reference 100.But, should know with those skilled in the art, below institute intelligently also can be applied to system 200.Those skilled in the art will know the element of Fig. 1 of knowing under the situation of spirit that does not deviate from invention and scope and 2 and other configuration or the integration of controller.
Fig. 3 illustrates the details of the workspace 300 of illustrational SLM 104.Workspace 300 comprises the pixel 302 (being represented by the ellipse among the figure) of n * m array.Pixel 302 can be mirror on the DMD or the position on the LCD.By adjusting the physical features of pixel 302, they can be regarded as one of state that is in them.The state that can be used to switch different pixels 302 according to the numeral or the analog input signal of required pattern.In certain embodiments, can detect the true pattern that just is being written to object 112 and determine pattern whether outside acceptable tolerance.If for being, then controller 116 can be in order to produce real time modelling or digital controlled signal (for example proofread and correct and adjustment etc.) just produced by SLM 104 so that fine setting pattern.
Fig. 4 illustrates the further details of SLM 104.SLM 104 can comprise around the workspace 300 non-ly initiatively encapsulate 400.And in alternate embodiment, master controller 402 can be coupled to each SLM controller 116 to monitor and control SLM array.Dotted line among Fig. 4 is represented the 2nd SLM in the SLM array.More than one SLM can be added in the array to be fit to implement design.As described below, in other embodiments, adjacent SLM can be offset each other or be staggered.
The SLM array configurations
Fig. 5 illustrates assembly 500, comprises bracing or strutting arrangement 502 to hold SLM 104 arrays.Following will the description in more detail, in different embodiment, SLM 104 arrays can be implemented design standards according to the exposure of each required pulse or other, and have different line numbers, columns, the SLM number of each row, the SLM number of each row etc.SLM 104 can be coupled to bracing or strutting arrangement 502.Bracing or strutting arrangement 502 can have heat control district 504 (for example water or air channel etc.).Bracing or strutting arrangement 502 also has the zone (for example Fig. 4 illustrates element 116 and element 402 can be ASIC, A/D converter, D/A converter, is used for the fiber optic components of streams data etc.) that is used for steering logic and other circuit.In addition, as known in the correlation technique, bracing or strutting arrangement 502 can have window 506 (being formed within the dotted line shape) to hold SLM 104.Bracing or strutting arrangement 502, SLM 104, and the cooling or the control device circuit of all peripheries be called assembly.The joint (for example adjacent elements of connection features on object 112) that the required step of assembly 500 permissions is that be used to take the lead with generation and SLM that trail is required and overlapping.Leading SLM produces first image in the sequence image in scan period on object 112, the SLM that trails produces last image in the sequence image in scan period on object 112.Helping to remove from the leading of different scanning and the doubling of the image of trailing SLM 104 may be because the joint or the seam of adjacent and non-overlapped scanning.For example bracing or strutting arrangement 502 can be 250mm * 250mm or 300mm * 300mm.Bracing or strutting arrangement 502 can be used for heat management by the made that adopts temperature stabilization.
Bracing or strutting arrangement 502 can be used as mechanical framework with the interval control of guaranteeing SLM 104 and be used to embed circuit control and heat control district 504.Any electronic installation can be installed on the dorsal part of bracing or strutting arrangement 502 and the either side in the front side or on the two.For example when using based on the SLM of analogue technique or electron device, wiring can be coupled to workspace 300 from control or coupled system 504.Owing to be installed on the bracing or strutting arrangement 502, these wiring can considerably be lacked, thereby compare circuit can reduce simulating signal away from the situation of bracing or strutting arrangement decay.And, between circuit and workspace 300, have short chain and connect and can increase communication speed, and thereby increase real-time pattern and regulate the speed again.
In certain embodiments, when the electron device in SLM 104 or the circuit damages, can easily change assembly 500.Though it is obviously more expensive than the chip of only changing on the assembly 500 to change assembly 500,, it is in fact more efficient to change whole assembly 500, thereby can save production cost.And assembly 500 can be ressembled, so, if when the final user is ready to use the assembly of ressembling 500, on part exchanging, can reduce cost.In case when assembly 500 is replaced, before recovering manufacturing again, only need whole alignment.
Utilize the gray processing of time modulation
Use for most little one-tenth shadow, for example need to control the position or the width of track.The effective ways of controlling these patterns and increase resolution are to have gray shade scale as much as possible.
One of gray scale on increase object method is the time span that the modulation object is exposed to incident light.Fig. 6 is the process flow diagram of one embodiment of the invention, and wherein, the duration of exposure can be modulated.In the present embodiment, lighting source 102 comprises the laser instrument (not shown).In step 602, can transmit on object 112, to form first pattern by SLM 104 from the light of lighting source 102.
Embodiment.
In step 606, the light from lighting source 102 that has different pulse widths this moment can be transmitted to form second pattern on object 102 by SLM 104.Second pattern can with first pattern overlapping.Overlapping pattern can produce gray scale.
Fig. 7 represents the second embodiment of the present invention, and wherein, the duration of exposure can be modulated.Step 702 comprises the rayed SLM 104 that is used to from lighting source 102.SLM 104 can produce pattern in light.
In step 704, object 112 can be exposed to the patterned light from SLM 104.
At time (t-β), the part in the path of scanning process, the A of first of pixel 302 can switch to their closed condition.Therefore, just in time the time (t-β) afterwards, (N-A) pixel still maintains their duty.After a while, at time (t-α), the second portion B of pixel 302 switches to closed condition.Like this, the time (t-α) afterwards, ((N-A)-B) pixel maintains their duty.At last, when when time t reaches the ending of scanning, ((N-A)-B) pixel can switch to their closed condition, does not stay the pixel that maintains duty for remaining.
Utilize the gray processing of power modulation
Fig. 8 represents the method for a third embodiment in accordance with the invention.In method 800, by modulating power in each exposure to produce gray processing.The further method for expressing 800 of Figure 11, calcspar is represented an embodiment of projection optics element 110.In the present embodiment, projection optics element 110 comprises light filter 1102 and other optical element 1104.Those skilled in the art will understand other optical element 1104 can be placed in before the light filter 1102, afterwards or in the light path on two sides 1106.In addition, in other embodiments, light filter 1102 can place any place of the light path of projection optics element 110 outsides.
In the embodiment shown in Figure 11, projection optics element 110 also comprises control system 1108, is used for the intensity transmission value of control light filter 1102 among other thing.Control system 1108 can be manual or electronic type.For example control system 1108 can comprise switch.
In method 800, step 802 comprises the light that light is filtered with the generation process by light filter 1102 from lighting source.Light filter 1102 has the first intensity transmission value.
In step 804, can make object 112 exposures on object 112, to produce first pattern through the light that filters.
In step 806, the intensity transmission value of light filter 1102 can be changed by for example control system 1108, so that light filter 1102 has the second intensity transmission value.
Step 808 comprises that making first pattern and second pattern overlapping, second pattern is light filter 1102 and the generation that the light process has the second intensity transmission value.Utilize the second pattern exposure object 112 can produce gray scale, second pattern has the intensity that is different from first pattern.Can repeating step 806 and 808 to increase the gray shade scale number on the object 112.
Fig. 9 represents the method 900 of a fourth embodiment in accordance with the invention.In method 900, by the power in the various piece of modulated beam of light to produce gray scale.With the further compensation process 900 of Figure 12, calcspar comprises can be by the element in the system 1200 of method 900 uses.System 1200 comprises lighting source 102, optical splitter 1202, filter set 1204, SLM assembly 500, reaches object 112 among other element.Filter set 1204 comprises light filter A-N, light filter A-N in filter set 1204 with ellipse representation.Similarly, SLM assembly 500 comprises the number SLM identical with numbers of optical filters at least.If N light filter for example arranged in filter set 1204, N SLM then also can be arranged in SLM assembly 500.
In method 900, step 902 comprises the light from lighting source is divided into more than one light beam section.The light beam section will be called light beam section A-N.
In step 904, light beam section A-N can be by light filter A-N corresponding in the filter set 1204.Light filter A-N can modulate the power among each corresponding light beam section A-N.By after the light filter A-N, method 900 proceeds to step 906 at light beam section A-N.
In step 906, the light beam section A-N corresponding SLMA-N in the SLM assembly 500 that can throw light on.Each SLM A-N then transmits each light beam section A-N to object 112 in the SLM assembly 500.
At last, in step 908, each light beam section can be with overlap mode exposure object 112.Owing to produce different pattern at each light beam Duan Zhonghui by each SLM A-N, so some pattern can be to be different from the intensity exposure object 112 of other pattern.The exposure meeting of a plurality of patterns by varying strength produces gray shade scale on object 112.By increasing the number of employed each light beam section and each SLM, can increase number of grayscale levels.
Though in above-mentioned explanation different embodiments of the invention,, should be appreciated that they only are the usefulness that illustrates as an example, and non-limiting.Those skilled in the art under not departing from spirit of the present invention and scope, can reach in form and do different changes on the details obviously as can be known.Therefore, range of the present invention and scope should not be subject to above-mentioned illustrational embodiment, but by being defined according to claim described later and equivalency range thereof.
Claims (21)
1. method that in the little one-tenth shadow of the maskless with spatial light modulator system, is used on object producing gray scale, described method comprises:
Expose to the sun according to described object to produce pattern with light beam; And
The time shutter of modulating described object is to produce the gray shade scale of a scope on described object.
2. the method for claim 1, wherein described modulation step comprises the pulse width that changes LASER Light Source.
3. method as claimed in claim 2, wherein, described pattern is produced by the laser with the operation of first pulse width, and described method comprises again:
Make described pattern and the laser overlaid of operating with second pulse width, to overlap exposure, wherein, second pulse width is different from first pulse width,
So that described overlapping exposure produces the gray shade scale of different range on described object.
4. method as claimed in claim 3 wherein, repeats described overlapping step till obtaining requisite number purpose gray shade scale.
5. the method for claim 1, wherein described spatial light modulator has a plurality of pixels, and described method also comprised before described step of exposure:
Switch described a plurality of pixels in working order, or described a plurality of pixels are switched to closed condition from a duty, wherein, the duty of pixel is corresponding to being sent to described object by that pixel that is in particular grayscale with light, and described closed condition does not transmit the light to described object corresponding to described pixel.
6. method as claimed in claim 5, wherein, described modulation step comprises:
Make the part in a plurality of pixels of described spatial light modulator earlier switch to alternating state than other pixel in the described spatial light modulator.
7. method as claimed in claim 6 wherein also comprises the stained of the described pattern of compensation.
8. method that in the little one-tenth shadow of the maskless with spatial light modulator system, is used on object producing gray scale, described method comprises:
Expose to the sun according to described object to produce pattern with light beam; And
The power of modulating described light beam is to produce the gray shade scale of a scope on described object.
9. method as claimed in claim 8, wherein, described pattern is produced by the light beam with first power, and described method comprises again:
Make described pattern and have the light beam overlaid of second power, overlapping exposure,
So that described overlapping exposure produces the gray shade scale of different range on described object.
10. method as claimed in claim 9 wherein, repeats described overlapping step till obtaining requisite number purpose gray shade scale.
11. method as claimed in claim 10, wherein, described overlapping step comprises:
Make light beam by having the light filter of the constant intensity transmission value that is specifically designed to described overlapping exposure; And
Described light beam is sent to described object.
12. method as claimed in claim 9, wherein, described overlapping step comprises:
Described light beam is divided into more than one bundle;
Make each described bundle by having the light filter of constant intensity transmission value;
Utilize its single spatial light modulator separately to transmit each described bundle; And
Overlapping image on described object from each spatial light modulator.
13. the little one-tenth shadow of a maskless system comprises:
Lighting source;
Object; And
Controller,
Wherein, described controller modulation is exposed to the sun according to the duration of described object from the light beam of described light source, so that produce the gray shade scale of a scope on described object.
14. the little one-tenth shadow of maskless as claimed in claim 13 system, wherein, described modulator is by changing the pulse width of LASER Light Source to change the described duration between continuous exposure.
15. the little one-tenth shadow of maskless as claimed in claim 13 system wherein also comprises between described lighting source and described object:
Spatial light modulator,
Wherein, described spatial light modulator has a plurality of pixels, and
Wherein, the duty of pixel is corresponding to transmitting the light to described object by that pixel that is in particular grayscale, and closed condition does not transmit the light to described object corresponding to described pixel.
16. the little one-tenth shadow of maskless as claimed in claim 15 system, wherein, described modulator earlier switches at least one alternating state by making at least one pixel in the described spatial light modulator than other pixel in the described spatial light modulator, to change the described duration.
17. the little one-tenth shadow of a maskless system comprises:
The lighting source of output beam;
The optical splitter that described light beam is divided into a plurality of bundles;
A plurality of light filters, each described light filter is corresponding to described a plurality of intrafascicular one and have the strength of fixation transmission value; And
A plurality of spatial light modulators, each described spatial light modulator are corresponding to described a plurality of intrafascicular one,
Wherein, each light beam can be by the described light filter of correspondence and the spatial light modulator array of the described correspondence of throwing light on, so that the pattern that described a plurality of spatial light modulation produced is overlapping on described object in described a plurality of light beams.
18. system as claimed in claim 17 wherein also comprises:
Control system is used for controlling each patterns that each produced of described a plurality of spatial light modulators.
19. a method that is used for producing gray scale in the little one-tenth shadow of the maskless with spatial light modulator that a plurality of pixels are set system on object, described method comprises:
Expose to the sun according to described object to produce pattern with light beam; And
The time shutter of modulating described object is to produce the gray shade scale of first scope on described object; And
The power of modulating described light beam is to produce the gray shade scale of second scope on described object.
20. method as claimed in claim 19, wherein, the time shutter of modulating described object comprises in the group of following composition at least one:
Between exposure, change the pulse width of described light beam, to overlap exposure; And
Part in a plurality of pixels of described spatial light modulator is earlier switched to alternating state than other pixel in the described spatial light modulator.
21. method as claimed in claim 19, wherein, the power of modulating described light beam comprises in the group of following composition at least one;
Between exposure, change the power of described light beam, to overlap exposure;
Change the intensity transmission value of the light filter that described light beam passes through, to overlap exposure; And
After described light beam is divided into a plurality of bundles, make each bundle have the light filter of constant intensity transmission value separately by it.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/630,871 | 2003-07-31 | ||
| US10/630,871 US6831768B1 (en) | 2003-07-31 | 2003-07-31 | Using time and/or power modulation to achieve dose gray-scaling in optical maskless lithography |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1580958A true CN1580958A (en) | 2005-02-16 |
Family
ID=33490934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004100588236A Pending CN1580958A (en) | 2003-07-31 | 2004-07-30 | Modulation of exposure duration and/or power to achieve gray-scaling in maskless photolithography |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US6831768B1 (en) |
| EP (1) | EP1503245A3 (en) |
| JP (2) | JP2005057288A (en) |
| KR (1) | KR100756085B1 (en) |
| CN (1) | CN1580958A (en) |
| SG (1) | SG108979A1 (en) |
| TW (1) | TWI276833B (en) |
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-
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- 2004-07-23 SG SG200404324A patent/SG108979A1/en unknown
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- 2004-07-29 KR KR1020040059541A patent/KR100756085B1/en active IP Right Grant
- 2004-07-30 CN CNA2004100588236A patent/CN1580958A/en active Pending
- 2004-08-02 JP JP2004226019A patent/JP2005057288A/en active Pending
- 2004-11-05 US US10/981,590 patent/US6985280B2/en not_active Expired - Lifetime
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102687077A (en) * | 2009-10-08 | 2012-09-19 | 派因布鲁克成像系统公司 | An optical imaging writer system |
| CN102687077B (en) * | 2009-10-08 | 2015-01-21 | 班布努克影像公司 | An optical imaging writer system |
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| CN106575604A (en) * | 2014-08-01 | 2017-04-19 | 应用材料公司 | Digital grey tone lithography for 3d pattern formation |
| CN106575604B (en) * | 2014-08-01 | 2020-09-15 | 应用材料公司 | Digital gray tone lithography for 3D patterning |
| CN105989589A (en) * | 2015-02-09 | 2016-10-05 | 上海微电子装备有限公司 | Mask pattern graying method |
| CN105989589B (en) * | 2015-02-09 | 2019-01-18 | 上海微电子装备（集团）股份有限公司 | A kind of mask graph gray processing method |
| CN104820345A (en) * | 2015-05-23 | 2015-08-05 | 南昌航空大学 | Method for improving digital photoetching resolution on basis of sub-pixel modulation |
| CN112236721A (en) * | 2018-06-19 | 2021-01-15 | Ev 集团 E·索尔纳有限责任公司 | Method and device for exposing image points |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1503245A2 (en) | 2005-02-02 |
| JP2005057288A (en) | 2005-03-03 |
| US6831768B1 (en) | 2004-12-14 |
| KR100756085B1 (en) | 2007-09-05 |
| SG108979A1 (en) | 2005-02-28 |
| EP1503245A3 (en) | 2008-02-27 |
| TW200519444A (en) | 2005-06-16 |
| US20050094245A1 (en) | 2005-05-05 |
| KR20050014700A (en) | 2005-02-07 |
| JP2008193122A (en) | 2008-08-21 |
| TWI276833B (en) | 2007-03-21 |
| US6985280B2 (en) | 2006-01-10 |
| JP5079587B2 (en) | 2012-11-21 |
| US7463402B2 (en) | 2008-12-09 |
| US20060114546A1 (en) | 2006-06-01 |
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