CN1580792A - Method and device for measuring super conducting film surface resistance - Google Patents

Abstract

The present invention relates to a method for measuring surface resistance and its device, which is used for detecting metal material and superconducting material, in particular, it is a method and measuring device for detecting surface resistance of high-temperature superconducting film material. It adopts a medium-loaded resonator whose one end is short-circuited and another end is in opened state. It can respectively measure two microwave media loaded resonant cavities in which the decribed microwave media are respectively formed from two medium columns which are identical in material and length and different in diameter, so that it can define the system quality factor value Qr correspondent to other loss except tested sample, and further can meausre tested sample so as to obtain the surface resistance R of tested sample.

Description

Measure the method and the device thereof of superconducting thin film surface resistance

Technical field

The present invention relates to a kind of method and device thereof of surface measurements resistance, be used to detect metal material, superconducting film material,, belong to electronic technology field in particular for the method and the measurement mechanism of the surface resistance that detects the high-temperature superconducting thin film material.

Background technology

The surface resistance of superconducting film material is to weigh one of the important indicator of the microwave electrical property quality of material.For superconducting film material, mainly be to measure the surface resistance of material under superconducting temperature, and in measuring process, do not damage sample.

Existing several different methods is used for measuring the microwave surface resistance of superconducting thin film.It is a kind of method that is widely adopted that the resonator method is measured microwave surface resistance.The resonator method is divided into the destroyed method of sample and sample method two classes that are not destroyed again.

Document (Stripline resonator measurements of Z _sVersus H _RfIn YBa ₂Cu ₃O _7-XThinfilms, Daniel E.Oates, et al, IEEE Transactions on Microwave Theory andTechniques, 39 (1991) 1522) 1: adopt the strip line resonant cavity method to measure the superconducting thin film surface resistance.Before the test, superconducting thin film micro-strip resonantor be is etched into,, the microwave surface resistance of superconducting thin film can be obtained by microwave measurement and calculating.

Document (A sapphire resonator for microwave characterization of superconductingthin films, IEEE Transactions on Applied Superconductivity 3 (1993) 1457, C.Wilker, Z-Y.Shen, V.X.Nguyen and M.S.Brenner) 2: adopt the dielectric resonator method.During test, a pair of sample is placed on relative two end faces of sapphire medium post, forms a restricted dielectric resonator.By quality factor q and other parameters of measuring system, can calculate the mean value of two sample surface resistances.

Document (high-temperature superconductive thin film microwave surface resistance testing instrument and method, Chinese invention patent, the patent No. 93115387.5, inventor: Lu Jian opens it and encourages) and 3: adopt sapphire dielectric resonator method to measure the superconducting thin film surface resistance.Before the test, respectively quality factor q and other parameters of system are measured with standard component and calibrating device, and calculated the textural constant of system.And then test out the quality factor q of system with sample, can calculate the microwave surface resistance R of sample according to the textural constant of system _s

In sum, the prior art of superconducting thin film surface resistance measuring method is following three kinds of situations:

1, adopting the strip line resonant cavity method to measure microwave surface resistance is damaging measurement.Before the measurement, at first need sample making is become micro belt resonator, measure the back sample and can not be re-used as his usefulness.

2, adopt dielectric resonator two ends sample measurement method, surface resistance that can the noninvasive measurement sample, but what obtain is the mean value of two sample surface resistances.Expect the sheet resistance value of each sheet sample, need to measure the sample more than three, just can calculate the sheet resistance value of each sheet sample.

3, adopt calibrating device to determine the measuring method of textural constant, need know the surface resistance of calibrating device in advance.Tend to because the error of calibrating device surface resistance or the change of calibrating device surface resistance cause measuring error.

Summary of the invention

In order to solve the technological deficiency of prior art superconducting thin film surface resistance measuring method, destroyed as measuring samples, or need the multi-disc sample in measuring, and or need to rely on calibrating device etc. in measuring, the invention discloses a kind of method and device thereof of new measurement superconducting thin film surface resistance.

Measurement mechanism of the present invention: the measurement mechanism of this superconducting thin film surface resistance, it comprises metallic cavity, gland bonnet, is connected locking, inserted in the metallic cavity respectively, in metallic cavity upper end central authorities an inflatable and exhaust pipe is arranged as the input and output side of microwave by O-ring seal sealing, two microwave coupling lines by screw; Sample carrier places in the gland bonnet, and spring places between sample carrier and the gland bonnet, and specimen places between sample carrier and the metallic cavity end face, and the area of specimen is greater than the end area of cylindricality metallic cavity; Spring compresses specimen and metallic cavity by sample carrier, makes it tight contact; Dielectric cylinder places in the metallic cavity, the center of support ring.

Measuring method of the present invention: the method for this measurement superconducting thin film surface resistance, be to use that to make two length with a kind of dielectric material identical, dielectric cylinder A and B that diameter is different test same superconducting thin film respectively, determine the Q of system _rValue; And then meter is calculated surface resistance R _s

Ultimate principle of the present invention:

The electromagnetic field mode of operation is TE in the resonator of the present invention _{011+ δ}Mould.

If the nonloaded Q of resonator is Q ₀, then

$\frac{1}{Q_0}=\frac{1}{Q_c}+\frac{1}{Q_r}---\left(1\right)$

Q wherein _cBe the Q value of specimen, Q _rIt is Q value by the common decision of inwall, microwave coupling line 3 and other losses of the dielectric cylinder 2 of resonator, support ring 5, metallic cavity 1.If the surface resistance of sample is R _s, formula is then arranged

$R_s=\frac{G}{Q_c}---\left(2\right)$

Wherein G is the textural constant of resonator, can come out by the electromagnetic field Distribution calculation.Therefore have

$R_s=G(\frac{1}{Q_0}-\frac{1}{Q_r})---\left(3\right)$

Wherein the nonloaded Q of resonator is Q ₀, can obtain by the test of network analyzer to resonator.

For determining Q _rValue, two dielectric cylinder A that are respectively charged in same resonator cavity that dielectric material is identical, length is identical, diameter is different and dielectric cylinder B measure same set-iron respectively, can obtain calculating the formula of two metal sheet surface resistance

$R_{\mathrm{sA}}=G_A(\frac{1}{Q_{0A}}-\frac{1}{Q_{\mathrm{rA}}})---\left(4a\right)$

$R_{\mathrm{sB}}=G_B(\frac{1}{Q_{0B}}-\frac{1}{Q_{\mathrm{rB}}})---\left(4b\right)$

Wherein, G _AAnd G _BTextural constant when being to use dielectric cylinder A and dielectric cylinder B respectively can calculate by field distribution.Q _0AAnd Q _0BThe nonloaded Q of resonator cavity when being to use dielectric cylinder A and dielectric cylinder B respectively can obtain from the network analyzer test result.Because dielectric cylinder A is the same with dielectric cylinder B length shapes, diameter is approaching, can think

Q _rA＝Q _rB＝Q _r (5)

Because the evolution of metallic surface resistance and frequency is proportional, have again

$\frac{R_{\mathrm{sA}}}{R_{\mathrm{sB}}}=\sqrt{\frac{f_A}{f_B}}---\left(6\right)$

F wherein _AAnd f _BElectromagnetic field TE in the resonator cavity when being to use dielectric cylinder A and dielectric cylinder B respectively _{011+ δ}The resonance frequency of pattern can obtain from the network analyzer test.If

$C=\frac{G_B}{G_A}\sqrt{\frac{f_A}{f_B}}---\left(7\right)$

Obtain thus

$Q_r=\frac{C-1}{\frac{C}{Q_{0B}}-\frac{1}{Q_{0A}}}---\left(8\right)$

Formula can obtain the Q of system thus _rValue.

Equally, also can use superconducting thin film sample substituted metal model, utilize the surface resistance of superconducting thin film and square proportional relation of frequency, also can obtain the Q of system _rValue.

Obviously, do not need to know the sheet resistance value of set-iron or superconducting thin film before the test, but require set-iron or superconducting thin film microwave property in the end area of cylindricality metallic cavity even.

As the Q that obtains system _rAfter the value, the surface resistance R of measuring samples _sThe time, only with the resonator cavity of one of them dielectric cylinder composition, pack into treat the side sample after, measure the resonance frequency and the nonloaded Q of system with network analyzer, just can calculate R by (3) formula _s

Beneficial effect of the present invention:

Sample is not destroyed in the measuring process, has realized the absolute measurement of monolithic superconducting thin film surface resistance, does not need calibrating device, the degree of accuracy height, and can measure the surface resistance of metal material and superconducting film material under the low temperature.Can vacuumize also in the wire chamber of measurement mechanism and can charge into gas, measurement mechanism can use in air, also can use in liquid, and can distinguish a plurality of positions of measuring samples, also can measure the sample of different area.

Description of drawings:

Fig. 1. the measurement mechanism cut-open view of superconducting thin film surface resistance

Among the figure: 1, metallic cavity 2, dielectric cylinder 3, microwave coupling line 4, gland bonnet 5, support ring 6, specimen 7, sample carrier 8, spring 9, O-ring seal 10, inflatable and exhaust pipe 11, screw

Embodiment

Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in further detail:

As shown in Figure 1, the measurement mechanism of this superconducting thin film surface resistance, it comprises metallic cavity 1, gland bonnet 4, is connected locking, inserted in the metallic cavity 1 respectively, in metallic cavity 1 upper end central authorities an inflatable and exhaust pipe 10 is arranged as the input and output side of microwave by O-ring seal 9 sealings, two microwave coupling lines 3 by screw 11; Sample carrier 7 places in the gland bonnet 4, and spring 8 places between sample carrier and the gland bonnet, and specimen 6 places between sample carrier and the metallic cavity end face, and the area of specimen 6 is greater than the end area of cylindricality metallic cavity; Spring 8 compresses specimen 6 and metallic cavity 1 by sample carrier 7, makes it tight contact; Dielectric cylinder 2 places in the metallic cavity, the center of support ring 5.

Support ring 5 is to place to be used for fixing dielectric cylinder in the metallic cavity 1, to make dielectric cylinder 2 and metallic cavity 1 keep coaxial, and makes the end face of dielectric cylinder and metallic cavity in the same plane, constitutes the sample test plane.

Dielectric cylinder 2 adopts fabricated from sapphire, support ring 5 to adopt teflon to make.

The method of this measurement superconducting thin film surface resistance is to use that to make two length with a kind of dielectric material identical, and dielectric cylinder A and B that diameter is different test same superconducting thin film respectively, determine the Q of system _rValue; And then meter is calculated surface resistance R _s

Determine the Q of system _rValue is by following operation steps:

1) according to the size and the TE of resonator cavity and medium _{011+ δ}Mode field distributes, the textural constant G when calculating working medium cylinder A and dielectric cylinder B respectively _AAnd G _B

2) dielectric cylinder A is packed in the wire chamber 1, sample is placed on it is closely contacted with the dielectric cylinder lower surface, with screw 11 locking metallic cavity 1 and gland bonnets 4;

3) by inflatable and exhaust pipe 10 cavity is vacuumized, then charge into helium or other gas;

4) with the proving installation cooling, as put into liquid nitrogen, keep temperature even, as 77K;

5) be connected with input port with the output of network analyzer respectively by microwave coupling line 3, and measure resonance frequency f _AWith nonloaded Q Q _0A

6) take out dielectric cylinder A, dielectric cylinder B packed in the wire chamber 1 into repeating step 2) to 5), measure resonance frequency f _BWith nonloaded Q Q _0B

7) calculate Q by (7) formula and (8) formula _r

8) if use the superconducting thin film sample, according to operation steps 1) to 6) carry out, use formula then

$C=\frac{G_B}{G_A}\&CenterDot;\frac{f_A^2}{{\mathrm{<figure-callout\; id="2"\; label="f\; B"\; filenames="A20041001924800101.png"\; state="\{\{state\}\}">f</figure-callout>}}_B^{}}$ With $Q_r=\frac{C-1}{\frac{C}{Q_{0B}}-\frac{1}{Q_{0A}}}$ Calculate Q _r

Surface resistance R _sMeasurements and calculations:

At Q _rAfter value is determined, select to measure Q _rThe time a dielectric cylinder in two dielectric cylinders, A or B directly measure specimen, need not each specimen is carried out Q _rThe replication of value, concrete steps are as follows:

1) specimen 6 is placed on the sample carrier 7, it is closely contacted with dielectric cylinder 2, with screw 11 locking metallic cavity 1 and gland bonnets 4;

2) by inflatable and exhaust pipe 10 cavity is vacuumized, then charge into helium or other gas;

3) with the proving installation cooling, as be placed in the liquid nitrogen, keep temperature even, as 77K;

4) be connected with output, the input port of network analyzer respectively by microwave coupling line 3, and measure resonance frequency f ₀With nonloaded Q Q ₀

5) calculate the R of sample by formula (3) _sValue.

The dielectric resonator that is adopted in this device is that a terminal shortcircuit and the other end are in the open state medium and load resonator.Electromagnetic field mode of operation in the dielectric resonator is selected TE _{011+ δ}Pattern.Because high-purity monocrystalline sapphire has the characteristics of low-loss and high-k, it most of electromagnetic energy is limited in the sapphire and near, away from the radially decay rapidly of sapphire surface electromagnetic intensity, thereby it has higher Q value, and this has just guaranteed that measurement mechanism has higher measurement sensitivity.

Described method of the present invention be adopt that two dielectric materials are identical, equal in length, different dielectric cylinder A and the B of diameter, constitute the microwave-medium loaded cavity with same metallic cavity and same specimen respectively, utilize field distribution to calculate the textural constant G of resonator cavity _AAnd G _B, record the resonance frequency f of resonator cavity with network analyzer _AAnd f _B, nonloaded Q Q _0AAnd Q _0B, the Q value that calculates other loss correspondences beyond the specimen is Q _r, use one of them dielectric cylinder to measure the surface resistance R of this sample or other samples _sSurface measurements resistive method of the present invention is a kind of specimen nondestructive test, and does not need the standard component of known surface resistance, is a kind of absolute measurement of surface resistance, and measuring process is simple to operate, the measuring accuracy height.The method of described surface measurements resistance of the present invention can be measured the surface resistance of superconducting film material, surface resistance that also can measuring metallic materials.

The concrete operations step:

(1) determines Q _rValue:

The present invention measures before the superconducting thin film surface resistance, at first needs to determine the Q of system _rValue.The concrete operations step is as follows:

1, according to the size and the TE of resonator cavity and medium _{011+ δ}Mode field distributes, the textural constant G when calculating working medium post A and medium post B respectively _AAnd G _B

2, dielectric cylinder A is packed in the wire chamber 1, sample is placed on it is closely contacted with the dielectric cylinder lower surface.With screw 11 locking metallic cavity 1 and gland bonnets 4.

3, by inflatable and exhaust pipe 10 cavity is vacuumized, then charge into helium or other gas.

4, with the proving installation cooling, as put into liquid nitrogen, keep temperature even, as 77K.

5, be connected with output, the input port of network analyzer respectively by microwave coupling line 3, and measure resonance frequency f _AWith nonloaded Q Q _0A

6, take out dielectric cylinder A, dielectric cylinder B is packed in the wire chamber 1.Repeating step 2 to 5 is measured resonance frequency f _BWith nonloaded Q Q _0B

7, calculate Q by (7) formula and (8) formula _r

(2) surface resistance R of working sample _s:

Q _rAfter value is determined, select to measure Q _rThe time a dielectric cylinder (for example dielectric cylinder A) in two dielectric cylinders, can directly measure specimen, need not each specimen is carried out Q _rThe replication of value.Concrete steps are as follows:

1, specimen is placed on the sample carrier 7, it is closely contacted with dielectric cylinder, with screw 11 locking metallic cavity 1 and gland bonnets 4.

2, by inflatable and exhaust pipe 10 cavity is vacuumized, then charge into helium or other gas.

3, with the proving installation cooling, as put into liquid helium, keep temperature even, as 77K.

4, be connected with output, the input port of network analyzer respectively by microwave coupling line 3, and measure resonance frequency f _AWith nonloaded Q Q ₀

5, calculate the R of sample by formula (3) _sValue.

Example 1: the high-purity oxygen-free copper of metallic cavity 1 usefulness is made internal diameter 19.0mm.Dielectric cylinder A and dielectric cylinder B adopt the sapphire medium, and body diameter is respectively 6.8mm and 6.0mm, and length is 4.0mm.The microwave coupling line adopts the coupling of half steel concentric cable coupling ring.Support ring 5 uses pure polytetrafluoroethylene.The test set-iron adopts high-purity no-oxygen copper plate of polishing, diameter 50.8mm.During test proving installation is directly put into liquid nitrogen, temperature is 77K.

According to the field distribution in the resonator cavity, can calculate G _A=292.56 and G _B=352.44.Working medium cylinder A and dielectric cylinder B record Q respectively _0A=13233.6, Q _0B=14850.0, resonance frequency f _A=15.429GHz and f _B=16.431GHz. can calculate Q thus _r=54959.96.

The surface resistance of high-purity no-oxygen copper plate under liquid nitrogen temperature (77K), R _s(15.429GHz)=and 16.784m Ω, R _s(16.413GHz)=17.321m Ω.

Example 2: test sample plate adopts Tl ₂Ba ₂CaCu ₂O _XSuperconducting thin film, diameter 50.8mm.During test proving installation is directly put into liquid nitrogen.

Test result: under liquid nitrogen temperature (77K), Tl ₂Ba ₂CaCu ₂O _XThe surface resistance R of superconducting thin film _s(14.761GHz)=and 0.688m Ω, R _s(15.428GHz)=0.761m Ω.

Claims (5)

1. device of measuring the superconducting thin film surface resistance is characterized in that: it comprises metallic cavity (1), gland bonnet (4), is connected locking, inserted in the metallic cavity (1) respectively, in metallic cavity (1) upper end central authorities an inflatable and exhaust pipe (10) is arranged as the input and output side of microwave by O-ring seal (9) sealing, two microwave coupling lines (3) by screw (11); Sample carrier (7) places in the gland bonnet, and spring (8) places between sample carrier and the gland bonnet, and specimen (6) places between sample carrier and the metallic cavity end face, and the area of specimen is greater than the end area of cylindricality metallic cavity; Spring (8) compresses specimen (6) and metallic cavity (1) by sample carrier (7), makes it tight contact; Dielectric cylinder (2) places in the metallic cavity, the center of support ring (5).

2. the device of measurement superconducting thin film surface resistance according to claim 1, it is characterized in that: support ring is to place in the metallic cavity as the mounting medium cylinder, make dielectric cylinder (2) and metallic cavity (1) maintenance coaxial, and make the end face of dielectric cylinder and metallic cavity in the same plane, constitute the sample test plane.

3. method of measuring the superconducting thin film surface resistance is characterized in that: use that to manufacture two length with a kind of dielectric material identical, dielectric cylinder A and B that diameter is different test same superconducting thin film respectively, determine the Q of system _rValue; And then meter is calculated surface resistance R _s

4. the method for measurement superconducting thin film surface resistance according to claim 3 is characterized in that: determine the Q of system _rValue is by following operation steps:

1) according to the size and the TE of resonator cavity and medium _{011+ δ}Mode field distributes, the textural constant G when calculating working medium cylinder A and dielectric cylinder B respectively _AAnd G _B

2) dielectric cylinder A is packed in the wire chamber (1), sample is placed on it is closely contacted with dielectric cylinder (2) lower surface, with screw (11) locking metallic cavity (1) and gland bonnet (4);

3) by inflatable and exhaust pipe (10) cavity is vacuumized, then charge into helium or other gas;

4) with the proving installation cooling, as put into liquid nitrogen, keep temperature even, as 77K;

5) be connected with input port with the output of network analyzer respectively by microwave coupling line (3), and measure resonance frequency f _AWith nonloaded Q Q _0A

6) take out dielectric cylinder A, dielectric cylinder B packed in the wire chamber (1) into repeating step 2) to 5), measure resonance frequency f _BWith nonloaded Q Q _0B

7) if use metal sample, with formula by $C=\frac{G_B}{G_A}\&CenterDot;\sqrt{\frac{f_A}{f_B}}$ With $Q_r=\frac{C-1}{\frac{C}{Q_{0B}}-\frac{1}{Q_{0A}}}$ Calculate Q _r

8) if use the superconducting thin film sample, according to operation steps 1) to 6) carry out, use formula then

$C=\frac{G_B}{G_A}\&CenterDot;\frac{f_A^2}{f_B^2}$ With $Q_r=\frac{C-1}{\frac{C}{Q_{0B}}-\frac{1}{Q_{0A}}}$ Calculate Q _r

5. the method for measurement superconducting thin film surface resistance according to claim 3 is characterized in that: surface resistance R _sMeasurement calculate, at Q _rAfter value is determined, select to measure Q _rThe time a dielectric cylinder in two dielectric cylinders, A or B directly measure specimen, need not each specimen is carried out Q _rThe replication of value, concrete steps are as follows:

1) specimen (6) is placed on the sample carrier (7), it is closely contacted with dielectric cylinder (2), with screw (11) locking metallic cavity (1) and gland bonnet (4);

2) by inflatable and exhaust pipe (10) cavity is vacuumized, then charge into helium or other gas;

3) with the proving installation cooling, as be placed in the liquid nitrogen, keep temperature even, as 77K;

4) be connected with output, the input port of network analyzer respectively by microwave coupling line (3), and measure resonance frequency f ₀With nonloaded Q Q ₀

5) by formula $R_s=G(\frac{1}{Q_0}-\frac{1}{Q_r})$ Calculate the R of sample _sValue.

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