CN1571172A - LED and manufacturing method thereof - Google Patents
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- CN1571172A CN1571172A CN 03133175 CN03133175A CN1571172A CN 1571172 A CN1571172 A CN 1571172A CN 03133175 CN03133175 CN 03133175 CN 03133175 A CN03133175 A CN 03133175A CN 1571172 A CN1571172 A CN 1571172A
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Abstract
The invention discloses a light emitting diode and method for manufacturing same. The light emitting diode at least comprises: a transparent substrate plate; a reflection layer disposed on one side of the transparent substrate plate; an adhesion layer on the other side of the transparent substrate plate; a semiconductor great crystal structure disposed on the adhesion layer, and a transparent inductive layer disposed on the n-type contact layer of the semiconductor great crystal structure; wherein the semiconductor great crystal structure comprises at least an n-type contact layer which can be a continuous planar structure, a continuous netted or strip surface structure, or cylindrical or corner post structure with discontinuous surface.
Description
Technical field
The present invention relates to a kind of light-emitting diode and manufacture method thereof, relate in particular to a kind of high brightness LED and manufacture method thereof of utilizing the manufacturing of chip join technology.
Background technology
Please refer to Fig. 1, Fig. 1 is the profile of traditional light emitting diode construction.This light emitting diode construction comprises substrate 100, n N-type semiconductor N resilient coating (Buffer Layer) 102, n N-type semiconductor N contact layer (Contact Layer) 104, n N-type semiconductor N coating layer (Cladding Layer) 106, active layer (ActiveLayer) 108, p N-type semiconductor N coating layer 110, the p N-type semiconductor N contact layer 112 that piles up in regular turn, and is positioned at the n type contact mat 116 on p type contact mat (Contact Pad) 114 and the n N-type semiconductor N contact layer 104 that is positioned at exposure on the p N-type semiconductor N contact layer 112 of part.
It is the material of substrate 100 that general traditional light emitting diode construction adopts n p type gallium arensidep (GaAs).Because the substrate 100 meeting absorbing light that the n p type gallium arensidep is constituted, therefore in the photon that the active layer 108 of light-emitting diode is produced, photon major part towards substrate 100 directions will be absorbed by substrate 100, and have a strong impact on the luminous efficiency of light-emitting diode component.
For avoiding the substrate extinction problem of light-emitting diode, company of U.S. Hewlett-Packard (Hewlett-Packard) discloses the technology that aluminum gallium arsenide (AlGaAs) light-emitting diode chip for backlight unit is directly joined to other substrate after the GaAs substrate is peeled off in its United States Patent (USP) No. 5376580 (March 19 1993 applying date).Yet the shortcoming that No. the 5376580th, this United States Patent (USP) is to consider the lattice direction alignment of chip chamber of fitting, and causes qualification rate to reduce.In addition, people such as the K.H.Chang of Taiwan brand-new photoelectricity company (Visual Photonics Epitaxy) disclose light-emitting diode chip for backlight unit after peeling off on its primary substrate (Growth Substrate) in its United States Patent (USP) No. 6258699 (applying date is on May 10th, 1999), utilize metal to work as the correlation technique of engagement medium.But the shortcoming that No. the 6258699th, this United States Patent (USP) is to peel off easily after fitting, and causes qualification rate to descend.
In summary, the light-emitting diode of described prior art on reality is used, obviously exists inconvenience and defective, so be necessary to be improved.
Summary of the invention
The technical problem to be solved in the present invention is that the substrate of existing light-emitting diode absorbs photon, influence the luminous efficiency of light-emitting diode component, and light-emitting diode chip for backlight unit is peeled off on substrate directly or when utilizing metal to be engaged in other substrates as engagement medium, must or fit the alignment of chip chamber lattice direction and easily peel off, cause qualification rate to descend.
For solving the problems of the technologies described above, the invention provides a kind of light-emitting diode, comprise at least: a transparency carrier; One is positioned at the reflector on the one side of transparency carrier; One is positioned at the following layer on the another side of transparency carrier; One is positioned at the semiconductor epitaxial structure on the following layer; An and transparency conducting layer that is positioned on the semiconductor epitaxial structure.
The material in reflector is a metal among the present invention, and the material of following layer is high temperature resistant and the conduction or the electrically non-conductive material of the high-temperature coefficient of conductivity, and the material of following layer can be organic material or metal.
The present invention also provides this kind manufacturing method for LED, it comprises the following steps: a kind of manufacturing method for LED at least, at least comprise: a primary substrate is provided, wherein comprises the resilient coating and the etch stop layer (Etching Stop Layer) that pile up in regular turn on this primary substrate at least; On etch stop layer, form the semiconductor epitaxial structure; Remove described primary substrate, resilient coating and etch stop layer; One transparency carrier is provided, and wherein the one side of this transparency carrier comprises a reflector at least, and the another side of this transparency carrier comprises a following layer at least; Carry out a chip join step so as to the semiconductor epitaxial structure being fitted on the following layer of transparency carrier; And on the semiconductor epitaxial structure, form a transparency conducting layer.
The present invention is after this chip join step, comprise that also the n N-type semiconductor N contact layer to semiconductor structure carries out etched step, so as to making n N-type semiconductor N contact layer form nonplanar continuous structure or noncontinuous surface structure, thus, can improve the electric current dispersion effect.
Light-emitting diode of the present invention and manufacture method thereof by removing primary substrate, can significantly be reduced the loss of light intensity that the substrate absorbing light is caused.Secondly, utilize then that material carries out chip join, can not need consider the direction configuration of joint chip, thereby can improve qualification rate and reduce production costs.In addition, the reflector on the transparency carrier can provide photon to utilize again, and then can improve the quantity that photon is taken out by the assembly side.In addition, deposit transparent conductive layer on the n N-type semiconductor N contact layer after the etching not only can improve light and take out efficient, and n type contact mat is positioned at the front of assembly, also can take into account the effect that electric current disperses.
Description of drawings
Below in conjunction with accompanying drawing,, will make technical scheme of the present invention and other beneficial effects apparent by detailed description to preferred embodiment of the present invention.
In the accompanying drawing,
Fig. 1 is the profile of traditional light emitting diode construction;
Fig. 2 is the profile (not removing primary substrate) of the epitaxial structure of the light-emitting diode of one embodiment of the invention;
Fig. 3 is the profile (removing primary substrate) of the epitaxial structure of the light-emitting diode of one embodiment of the invention;
Fig. 4 is the profile of transparency carrier of the light-emitting diode of one embodiment of the invention;
Fig. 5 a is the profile of the light emitting diode construction of one embodiment of the invention;
Fig. 5 b is the profile of the light emitting diode construction of another embodiment of the present invention;
Fig. 6 is the light removing direction schematic diagram of the light-emitting diode of one embodiment of the invention.
Embodiment
Hereinafter, will describe the present invention in detail.
In semiconductor luminous assembly, AlGaInP (AlGaInP) is common material.Because AlGaInP is a direct gap material, therefore, can make the lattice constant match of AlGaInP material and GaAs substrate by suitably adjusting the ratio of indium/(aluminium+gallium) in the AlGaInP material.If the ratio of aluminium and gallium can make emission wavelength between 550nm (green glow)～680nm (ruddiness) in adjusting the AlGaInP material.Because the adjustment of AlGaInP material on assembly crystalline substance of heap of stone is quite simple and easy, can be easily obtain wanting luminous wavelength, so be highly suitable for making the luminescence component of visible region in the mode of linearity.
In addition, owing to increase the energy gap that the content of aluminium in the AlGaInP material can increase the AlGaInP material.Therefore, generally can be used as coating layer with the high AlGaInP of aluminium content, drop to the center luminescent layer carrier of (have another name called and be active layer) so as to limitation, penetrate combined efficiency with the injection efficiency and the width of cloth that improve carrier, and form the light-emitting diode of the double-heterostructure (Double Heterostructure) of tool high-luminous-efficiency.Wherein, because that the energy gap of above-mentioned coating layer sends photon energy is big, therefore can not absorb the light that active layer sends.
Please refer to Fig. 2 to Fig. 5 a, Fig. 2 to Fig. 5 a is the processing procedure profile of the light-emitting diode of a preferred embodiment of the present invention.The manufacture process of light-emitting diode of the present invention is: substrate 200 at first is provided, and wherein this substrate 200 is a primary substrate, and the material of substrate 200 can be the n p type gallium arensidep.Utilize for example Metalorganic chemical vapor deposition (Metal Organic Chemical Vapor Deposition again; MOCVD) mode forms resilient coating 202 and etch stop layer 204 in regular turn on substrate 200.Next, utilize Metalorganic chemical vapor deposition method for example to form the semiconductor epitaxial structure of this light-emitting diode, and on etch stop layer 204, form n N-type semiconductor N contact layer 206, n N-type semiconductor N coating layer 208, multi-layer quantum well active layer (Multiple Quantum Well Active Layer) 210, p N-type semiconductor N coating layer 212 and p N-type semiconductor N contact layer 214 in regular turn in regular turn, and form structure as shown in Figure 2.In this preferred embodiment, the material of resilient coating 202 can be the n p type gallium arensidep; The material of etch stop layer 204 can be n type AlGaInP; The material of n N-type semiconductor N contact layer 206 can be the n p type gallium arensidep; The material of n N-type semiconductor N coating layer 208 can be AlGaInP; The material of multi-layer quantum well active layer 210 can be AlGaInP/InGaP (GaInP); The material of p N-type semiconductor N coating layer 212 can be AlGaInP; And the material of p N-type semiconductor N contact layer 214 can be AlGaInP arsenic (AlGaInAsP).
After waiting to finish the semiconductor epitaxial structure of light-emitting diode, can utilize etched mode to remove etch stop layer 204, so as to removing resilient coating 202 and substrate 200, and stay the epitaxial structure of light-emitting diode, as shown in Figure 3.
At the same time, provide transparency carrier 300, wherein the material of this transparency carrier 300 can be aluminium oxide (Al
2O
3), zinc selenide (ZnSe), zinc oxide (ZeO), gallium phosphide (GaP) or glass etc.Then, for example utilizing, the mode of deposition forms reflector 304 in the one side of transparency carrier 300, and utilize for example coating (Coating), deposition or evaporation modes such as (Evaporation) to form following layer 302 at the another side of transparency carrier 300, and form structure as shown in Figure 4.Wherein, reflector 304 is preferably the metal into high light reflectivity, for example aluminium (Al), gold (Au), silver (Ag), and the alloy of described metal, and the material of following layer 302 is conduction or nonconducting high temperature resistant and high-temperature coefficient of conductivity material, for example organic material or metal.
Then, utilize for example chip join technology, the epitaxial structure of the light-emitting diode of Fig. 3 and transparency carrier 300 structures of Fig. 4 are fitted, and following layer 302 is engaged with p N-type semiconductor N contact layer 214.Utilization is carried out chip join by following layer 302 high temperature resistant and that high-temperature coefficient of conductivity material is constituted, does not need to consider to engage the direction configuration of light-emitting diode chip for backlight unit, therefore can improve qualification rate, and can reduce production costs.Secondly, behind transparency carrier 300 replacement substrates 200, not only can effectively reduce the loss of substrate light absorption, the light that also can improve light-emitting diode takes out efficient.Moreover, the reflector 304 of transparency carrier 300, the photon that can provide multi-layer quantum well active layer 210 to be produced utilizes again, and improves the quantity that photon is taken out by the side of light-emitting diode component.
After waiting to finish the chip join of light-emitting diode, for example utilize electron gun vapour deposition method (E-GunEvaporation), hot vapour deposition method or sputtering method (Sputtering) to form transparency conducting layer 216 and cover on the n N-type semiconductor N contact layer 206, take out efficient with the light that improves light-emitting diode.Wherein, the material of transparency conducting layer 216 can be alloy, titanyl compound or the nitride [for example titanium nitride (TiN)] of titanium (Ti), titanium, the oxide of tantalum (Ta) [tantalum pentoxide (Ta for example
2O
5)] or nitride, platinum (Pt), the alloy of platinum, tin indium oxide (Indium Tin Oxide; ITO), indium oxide (Indium Oxide), tin oxide (Tin Oxide) or cadmium tin (Cadmium Tin Oxide) etc.
After transparency conducting layer 216 forms, utilize for example little shadow and etching mode to define, so as to the n N-type semiconductor N contact layer 206 that removes transparency conducting layer 216 partly, part, the n N-type semiconductor N coating layer 208 of part, the multi-layer quantum well active layer 210 of part and the p N-type semiconductor N coating layer 212 of part, and expose p N-type semiconductor N contact layer 214 partly.Then, for example utilize deposition and little shadow to form n type contact mat 218 respectively or simultaneously on transparency conducting layer 216 partly with etched definition technology, and form on the part of p N-type semiconductor N contact layer 214 that p type contact mat 220 is positioned at exposure, thereby finish the making of light-emitting diode component, shown in Fig. 5 a.Because the doping content of n N-type semiconductor N is higher than the p N-type semiconductor N, so n type contact mat 218 can provide preferable electric current dispersion effect in the front of light-emitting diode component.
For realizing that high light takes out efficient and improves CURRENT DISTRIBUTION (Current Spreading) effect, after transparency carrier 300 structures of the light-emitting diode epitaxial structure of applying Fig. 3 and Fig. 4, can utilize for example development and dry type or Wet-type etching technology definition n N-type semiconductor N contact layer 222 earlier, and form the n N-type semiconductor N contact layer 222 of surface irregularity.Wherein, formed n N-type semiconductor N contact layer 222 can expose the n N-type semiconductor N coating layer 208 of part after etching, also can not expose n N-type semiconductor N coating layer 208.In a preferred embodiment of the present invention, n N-type semiconductor N contact layer 222 can be the cylinder or the corner structure of tool noncontinuous surface, or the netted or list structure of tool continuous surface.Next, for example utilizing, electron gun vapour deposition method, hot vapour deposition method or sputtering method formation transparency conducting layer 224 cover on the n N-type semiconductor N contact layer 222.Wherein, the material of transparency conducting layer 224 can be alloy, tin indium oxide, indium oxide, tin oxide or the cadmium tin etc. of the oxide of alloy, titanyl compound or nitride, tantalum of titanium, titanium or nitride, platinum, platinum.When n N-type semiconductor N contact layer 222 exposed the n N-type semiconductor N coating layer 208 of part, transparency conducting layer 224 covered on the n N-type semiconductor N coating layer 208 of n N-type semiconductor N contact layer 222 and exposure; And when n N-type semiconductor N contact layer 222 did not expose n N-type semiconductor N coating layer 208, transparency conducting layer 224 only covered on the n N-type semiconductor N contact layer 222.
Similarly, after transparency conducting layer 224 forms, shown in Fig. 5 b, utilize for example little shadow and etching mode to define, so as to the n N-type semiconductor N contact layer 222 that removes transparency conducting layer 224 partly, part, the n N-type semiconductor N coating layer 208 of part, the multi-layer quantum well active layer 210 of part and the p N-type semiconductor N coating layer 212 of part, thereby expose p N-type semiconductor N contact layer 214 partly.Then, for example utilize deposition and little shadow to form n type contact mat 218 respectively or simultaneously on transparency conducting layer 224 partly with etched definition technology, and form on the part of p N-type semiconductor N contact layer 214 that p type contact mat 220 is positioned at exposure, thereby finish the making of light-emitting diode component.
Please refer to Fig. 6, Fig. 6 is the light removing direction schematic diagram of a preferred embodiment of the present invention light-emitting diode.Light-emitting diode of the present invention also has the light removing direction of a plurality of increases such as direction 2, direction 3, direction 4, direction 5 and direction 6 except the light of direction 1 with traditional light-emitting diode takes out, therefore can obtain catch light output brightness.
By the invention described above preferred embodiment as can be known, an advantage of the present invention is exactly because the present invention utilizes the then material of high temperature resistant and the high-temperature coefficient of conductivity to carry out the chip join of light-emitting diode, so must not consider to engage the direction configuration of light-emitting diode chip for backlight unit.Therefore, can improve qualification rate, and then reach the purpose that reduces production costs.
By the invention described above preferred embodiment as can be known, another advantage of the present invention is exactly because remove the primary substrate of GaAs and the light-emitting diode epitaxial structure is fitted in transparency carrier, therefore not only can significantly reduce the loss of substrate light absorption, also can improve light and take out efficient.
By the invention described above preferred embodiment as can be known, another advantage of the present invention is exactly because therefore the light-emitting diode chip for backlight unit surface deposition transparency conducting layer of the present invention after applying can improve light and take out efficient.And deposition of transparent conductive film on the n N-type semiconductor N contact layer after the etching is taken out the efficient except providing high, can also take into account the electric current dispersion effect.
By the invention described above preferred embodiment as can be known, another advantage of the present invention is exactly because the present invention forms the reflector in the one side of transparency carrier, therefore can provide photon to utilize again, and improves the quantity that photon is taken out by the side of light-emitting diode component.
By the invention described above preferred embodiment as can be known, an advantage more of the present invention is exactly because the n type contact mat of light-emitting diode of the present invention is positioned at the front of assembly, therefore more traditional p type contact mat has better electric current dispersion effect at the light-emitting diode in assembly front.
Be understandable that; for the person of ordinary skill of the art; can make other various corresponding changes and distortion according to technical scheme of the present invention and technical conceive, and all these changes and distortion all should belong to the protection range of accompanying Claim of the present invention.
Claims (10)
1, a kind of light-emitting diode is characterized in that, comprises at least:
One transparency carrier;
One is positioned at the reflector on the one side of this transparency carrier;
One is positioned at the following layer on the another side of this transparency carrier;
One is positioned at the semiconductor epitaxial structure on this following layer; And
One is positioned at the transparency conducting layer on this semiconductor epitaxial structure.
2, light-emitting diode according to claim 1 is characterized in that, the material in this reflector is the high light reflectivity metal, and the material of this following layer is high temperature resistant and high-temperature coefficient of conductivity material.
3, light-emitting diode according to claim 1, it is characterized in that, this semiconductor epitaxial structure comprises a p type AlGaInP arsenic contact layer, a p type AlGaInP coating layer, one AlGaInP/InGaP multi-layer quantum well active layer, a n type AlGaInP coating layer and a n p type gallium arensidep contact layer that piles up in regular turn at least, and wherein this p type AlGaInP arsenic contact layer contacts with this following layer.
4, light-emitting diode according to claim 3 is characterized in that, this n p type gallium arensidep contact layer is a continuous surface structure.
5, light-emitting diode according to claim 3 is characterized in that, this n p type gallium arensidep contact layer is a noncontinuous surface structure, and this noncontinuous surface structure is selected from a group that is made up of column structure and corner structure.
6, a kind of manufacturing method for LED is characterized in that, comprises at least:
One primary substrate is provided, wherein comprises a resilient coating and an etch stop layer that piles up in regular turn on this primary substrate at least;
On this etch stop layer, form the semiconductor epitaxial structure;
Remove this primary substrate, this resilient coating and this etch stop layer;
One transparency carrier is provided, and wherein the one side of this transparency carrier comprises a reflector at least, and the another side of this transparency carrier comprises a following layer at least;
Carry out a chip join step so as to this semiconductor epitaxial structure being fitted on this following layer of this transparency carrier; And
Forming a transparency conducting layer covers on this semiconductor epitaxial structure.
7, manufacturing method for LED according to claim 6, it is characterized in that, this semiconductor epitaxial structure comprises a p type AlGaInP arsenic contact layer, a p type AlGaInP coating layer, one AlGaInP/InGaP multi-layer quantum well active layer, a n type AlGaInP coating layer and a n p type gallium arensidep contact layer that piles up in regular turn at least, and before removing this primary substrate, this resilient coating and this etch stop layer, this n p type gallium arensidep contact layer contacts with this etch stop layer.
8, manufacturing method for LED according to claim 7, it is characterized in that, after this chip join step, also comprise at least this n p type gallium arensidep contact layer is carried out an etching step, form an on-plane surface continuous structure so as to making this n p type gallium arensidep contact layer.
9, manufacturing method for LED according to claim 7, it is characterized in that, after this chip join step, also comprise at least this n p type gallium arensidep contact layer is carried out an etching step and exposes this n type AlGaInP coating layer partly, form a noncontinuous surface structure so as to making this n p type gallium arensidep contact layer.
10, manufacturing method for LED according to claim 6 is characterized in that, the material in this reflector is the high light reflectivity metal, and the material of this following layer is high temperature resistant and high-temperature coefficient of conductivity material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031331750A CN100345313C (en) | 2003-07-24 | 2003-07-24 | LED and manufacturing method thereof |
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|---|---|---|---|
| CNB031331750A CN100345313C (en) | 2003-07-24 | 2003-07-24 | LED and manufacturing method thereof |
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| CN1571172A true CN1571172A (en) | 2005-01-26 |
| CN100345313C CN100345313C (en) | 2007-10-24 |
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| CNB031331750A Expired - Fee Related CN100345313C (en) | 2003-07-24 | 2003-07-24 | LED and manufacturing method thereof |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100399592C (en) * | 2005-07-04 | 2008-07-02 | 中华映管股份有限公司 | Light-emitting-diode and method for improving lighting efficiency of same |
| CN100454592C (en) * | 2005-07-06 | 2009-01-21 | 晶元光电股份有限公司 | Semiconductor lighting element |
| US7514717B2 (en) | 2005-06-29 | 2009-04-07 | Chunghwa Picture Tubes, Ltd. | Light emitting diode |
| CN102820389A (en) * | 2012-07-21 | 2012-12-12 | 张�杰 | ELO (epitaxial lift-off) technology-based light emitting diode with inversed structure and preparation method thereof |
| CN102916088A (en) * | 2011-08-01 | 2013-02-06 | 晶元光电股份有限公司 | Luminous element with multiple laminated luminous layers |
| CN101515613B (en) * | 2008-02-19 | 2013-04-03 | 晶元光电股份有限公司 | Semiconductor component |
| CN109728146A (en) * | 2018-12-25 | 2019-05-07 | 郑州师范学院 | A kind of gallium nitride diode comprising reflecting material |
| CN111725375A (en) * | 2019-03-22 | 2020-09-29 | 新世纪光电股份有限公司 | Red light-emitting diode and manufacturing method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6258699B1 (en) * | 1999-05-10 | 2001-07-10 | Visual Photonics Epitaxy Co., Ltd. | Light emitting diode with a permanent subtrate of transparent glass or quartz and the method for manufacturing the same |
| US6287882B1 (en) * | 1999-10-04 | 2001-09-11 | Visual Photonics Epitaxy Co., Ltd. | Light emitting diode with a metal-coated reflective permanent substrate and the method for manufacturing the same |
| JP2002033509A (en) * | 2000-07-14 | 2002-01-31 | Hitachi Cable Ltd | Light emitting diode |
| CN1365153A (en) * | 2001-01-12 | 2002-08-21 | 联铨科技股份有限公司 | Light-emitting diode |
| TW513820B (en) * | 2001-12-26 | 2002-12-11 | United Epitaxy Co Ltd | Light emitting diode and its manufacturing method |
-
2003
- 2003-07-24 CN CNB031331750A patent/CN100345313C/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7514717B2 (en) | 2005-06-29 | 2009-04-07 | Chunghwa Picture Tubes, Ltd. | Light emitting diode |
| CN100399592C (en) * | 2005-07-04 | 2008-07-02 | 中华映管股份有限公司 | Light-emitting-diode and method for improving lighting efficiency of same |
| CN100454592C (en) * | 2005-07-06 | 2009-01-21 | 晶元光电股份有限公司 | Semiconductor lighting element |
| CN101515613B (en) * | 2008-02-19 | 2013-04-03 | 晶元光电股份有限公司 | Semiconductor component |
| CN102916088A (en) * | 2011-08-01 | 2013-02-06 | 晶元光电股份有限公司 | Luminous element with multiple laminated luminous layers |
| CN102916088B (en) * | 2011-08-01 | 2015-12-02 | 晶元光电股份有限公司 | There is the light-emitting component of the luminous lamination of multilayer |
| CN102820389A (en) * | 2012-07-21 | 2012-12-12 | 张�杰 | ELO (epitaxial lift-off) technology-based light emitting diode with inversed structure and preparation method thereof |
| CN102820389B (en) * | 2012-07-21 | 2015-11-25 | 张�杰 | A kind of inverted structure light-emitting diode based on ELO technology and preparation method thereof |
| CN109728146A (en) * | 2018-12-25 | 2019-05-07 | 郑州师范学院 | A kind of gallium nitride diode comprising reflecting material |
| CN111725375A (en) * | 2019-03-22 | 2020-09-29 | 新世纪光电股份有限公司 | Red light-emitting diode and manufacturing method thereof |
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|---|---|
| CN100345313C (en) | 2007-10-24 |
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Owner name: JINGYUAN PHOTOELECTRICITY CO., LTD. Free format text: FORMER OWNER: YUANSHEN PHOTOELECTRIC SCIENCE-TECHNOLOGY CO., LTD. Effective date: 20090717 |
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Effective date of registration: 20090717 Address after: Hsinchu, Taiwan Province Patentee after: Jingyuan Optoelectronics Co., Ltd. Address before: TaiWan, China Co-patentee before: Chen Ximing Patentee before: Meta arsenic optoelectronic Polytron Technologies Inc |
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Granted publication date: 20071024 Termination date: 20180724 |