CN1570739A - Fabrication method for reflecting electrode applied in reflective panel display and photo mask - Google Patents
Fabrication method for reflecting electrode applied in reflective panel display and photo mask Download PDFInfo
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- CN1570739A CN1570739A CN 200410037531 CN200410037531A CN1570739A CN 1570739 A CN1570739 A CN 1570739A CN 200410037531 CN200410037531 CN 200410037531 CN 200410037531 A CN200410037531 A CN 200410037531A CN 1570739 A CN1570739 A CN 1570739A
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Abstract
A preparation method and light cover for reflection electrode of reflection panel display, which is first to coat a fluid organic film to the upper surface of base board and to exposure it though light cover of semi-transparent area and to form in the organic film first area non-exposed, second area with light exposure and third area with high exposure, wherein , second area is located between the first and third; later to develop and remove the exposure part to form echelonment projection on the upper surface of organic film; then to exert heat flow to turn the echelonment projection into curved projection; finally to make a metal reflection electrode layer on the upper surface of the curved projection.
Description
Technical field
The present invention relates to a kind of method for making and light shield that is applied to the reflecting electrode of reflective flat-panel screens, especially a kind of method for making and light shield of only making reflecting electrode with one light shield.
Background technology
Quick progress along with the thin film transistor (TFT) manufacturing technology, LCD has been owing to possessed advantages such as frivolous, power saving, no width of cloth ray, a large amount of is applied to personal digital aid (PDA), notebook computer, digital camera, takes the photograph in the various electronic products such as video recorder, mobile phone.Yet, because LCD is a non-self luminous display, therefore, traditionally, with a cold cathode fluorescent lamp as backlight, optical films such as the light penetration diffusion barrier that is produced, polaroid, form a uniform in-plane light and inject display panels, use and present image.
Generally speaking, the light that backlight produced only has less than 10% and can pass display panels and be applied in the demonstration, and remaining luminous energy all is absorbed in the process that penetrates optical film and display panels.In order to address the above problem, reflective liquid-crystal display is developed.Reflective liquid-crystal display utilizes ambient light to replace the function of backlight, thereby does not need device cold cathode fluorescent lamp and relevant optical film among display.By this, except saving the energy consumption of display, more can reduce the dimension and weight of display.
Please refer to Fig. 1, show a typical reflective liquid-crystal display.Comprise a upper substrate 30, an infrabasal plate 10 and clamping layer of liquid crystal molecule 20 in upper and lower base plate 30 and 10.The lower surface of upper substrate 30 is manufactured with community electrode 32, and the upper surface of infrabasal plate 10 is manufactured with a reflecting electrode 12.And, drive liquid crystal molecule by the potential difference (PD) of 12 of common electrode 32 and reflecting electrodes and rotate, to reach the purpose of demonstration.
Please refer to Fig. 2, show the synoptic diagram of a typical reflective dot structure.This dot structure comprises a thin film transistor (TFT) 50 and a reflecting electrode 40.The grid of thin film transistor (TFT) 50 is connected to one scan line 60, and source electrode is connected to a signal wire 70, and drain electrode is connected to reflecting electrode 40.By the unlatching of sweep trace 60 these switches of control whether this thin film transistor (TFT) 50 is as a switch,, and use decision and whether be sent to reflecting electrode 40 from the shows signal of signal wire 70.It should be noted that the upper surface at above-mentioned reflecting electrode 40 is manufactured with a plurality of curved protrusion 42,, reduce the influence of mirrored effect (mirror effect) simultaneously normal demonstration to increase the visual range of this LCD.
Please refer to Fig. 3 A to Fig. 3 E, show the making flow process of a typical salient point reflecting electrode, and, shown in the figure corresponding to the section of a-a among Fig. 2.At first, as shown in Figure 3A, be coated with an organic layer 120 in the upper surface of a substrate 100, and see through a light shield M1 this organic layer 120 that exposes, only keep one first exposure region 122 and do not give exposure, and all the other are not subjected to the part that light shield M1 covers, and have the exposure depth that is equivalent to organic layer 120 thickness 30%-70%.Subsequently, please refer to shown in Fig. 3 B, see through a light shield M2 this organic layer 120 that exposes, this light shield M2 covers above-mentioned first exposure region 122 and its neighboring area, around first exposure region 122, to form second exposure region 124 of exposure depth with organic layer 120 thickness 30%-70%, and all the other are not subjected to the part that light shield M2 covers, and produce the exposure depth that is equivalent to organic layer 120 thickness 90%.Then, please refer to Fig. 3 C, see through a light shield M3 this organic layer 120 that exposes, to form the position of the 3rd exposure region 126 definition intraconnections of exposure fully.
Subsequently, please refer to Fig. 3 D, remove the part of exposure in the organic layer 120 with developer solution, in position corresponding to above-mentioned first exposure region 122 and second exposure region 124, form one stepped protruding 128, and, in position, form a window 130 corresponding to above-mentioned the 3rd exposure region 126.Then, please refer to Fig. 3 E, this organic layer 120 is imposed hot-fluid, make above-mentioned stepped protruding 128 to change a mild curved protrusion 132 into, subsequently, make the upper surface of metallic reflection electrode layer 160 again, and insert among the above-mentioned window 130 in this organic layer 120.
In the processing procedure of above-mentioned salient point reflecting electrode, using altogether has three road light shield M1, M2 and M3, also cooperates light shield to carry out three road exposure manufacture process simultaneously.And before each road exposure manufacture process, all light shield must be aimed at really with the exposing patterns that is formed at organic layer 120, produce error to prevent exposure process.Therefore, except the prolongation that causes the processing procedure time, also improved numerous and diverse property of processing procedure simultaneously.
So, because reflecting electrode has a significant effect for the demonstration of reflective liquid-crystal display, and the cost of manufacture of reflecting electrode also will have a strong impact on the cost of manufacture of reflective liquid-crystal display, and therefore, the making step that how to reduce reflecting electrode has also just become the improved emphasis of processing procedure.
Summary of the invention
The technical problem to be solved in the present invention is: propose a kind of method for making and light shield that is used for reflective flat-panel screens reflecting electrode, only need one light shield to carry out micro-photographing process, can reduce reflecting electrode and make the loaded down with trivial details of flow process and difficulty.
For this reason, the present invention discloses a kind of method for making of reflecting electrode, and it is applied to reflective flat-panel screens.At first, but the coating one heat flow organic layer in the upper surface of substrate.Then, the light shield that sees through a tool half penetration region this organic layer that partly exposes form second district of unexposed first district, low exposure and the 3rd district that highly exposes in organic layer, and this second district is positioned at first district and the 3rd interval.Subsequently, develop and remove the part of exposing in the organic layer, form step structure with upper surface at organic layer.Then, organic layer is imposed hot-fluid, make aforementioned step structure change curved-surface structure into.Next, make a metallic reflection electrode layer again, to finish the making flow process of reflecting electrode in the upper surface of curved-surface structure.
In order to carry out aforementioned making flow process to make reflecting electrode, the invention provides a kind of light shield, include a mesh-like area and a connecting line zone.Wherein, mesh-like area is in order to the position of definition reflecting electrode, and the mesh of this mesh-like area partly and between the netting twine part accompanies semi-opaque region, and simultaneously, the area of this semi-opaque region is greater than the area of mesh part.The connecting line zone comprises the position of a full photic zone with the definition intraconnections.
Make in the flow process at reflecting electrode of the present invention, can go out the salient point reflecting electrode by light shield manufacture.
Make in the flow process at reflecting electrode of the present invention, also can go out the concave point reflecting electrode by light shield manufacture.
Characteristics of the present invention and advantage are: in the making flow process of reflecting electrode of the present invention, see through light shield single exposure organic layer with semi-opaque region, produce second district and the 3rd district that highly exposes of unexposed first district, low exposure simultaneously, to form step structure; Simultaneously, in processing procedure of the present invention, only use one light shield, thereby exempted three road light shields in the conventional process, need before each road micro-photographing process, not aim at, step of exposing.The present invention has overcome the defective of prior art, can simplify the making flow process of reflecting electrode, and shortens the spent time of processing procedure, also can remove the required consumed time cost of process of changing light shield from.
Description of drawings
Fig. 1 is the synoptic diagram of a known reflective liquid-crystal display.
Fig. 2 is the synoptic diagram of a known reflective liquid-crystal display dot structure.
Fig. 3 A to Fig. 3 E is the synoptic diagram of the making flow process of a known male point reflection electrode, and this salient point reflecting electrode is applied to the pixel electrode among Fig. 2.
Fig. 4 A to Fig. 4 D is the synoptic diagram of pixel electrode making flow process one specific embodiment of the present invention, and, describe with a salient point reflecting electrode among the figure.
Fig. 5 is the synoptic diagram of netted light shield one specific embodiment of the present invention.
Fig. 6 A to Fig. 6 D is the synoptic diagram of another embodiment of pixel electrode making flow process of the present invention, and, describe with a concave point reflecting electrode among the figure.
The drawing reference numeral explanation:
10, infrabasal plate 30, upper substrate 20, layer of liquid crystal molecule 12, reflecting electrode
32, common electrode 40, reflecting electrode 42, salient point 50, thin film transistor (TFT)
60, sweep trace 70, signal wire 100,300,500, substrate
120,320,520, organic layer 200,400, light shield 122, first exposure region
124, second exposure region 126, the 3rd exposure region 160,360,560, metallic reflection electrode layer
128,328, stepped protruding 132,332, curved protrusion 528, stepped pothole
322,522, first district 324,524, second district 325,525, the 3rd district
326, the 526, the 4th district 532, curved surface pothole 130,330,530, window
222,425, light tight district 224,424, semi-opaque region 225,422, photic zone
226,426, opening 600, netted light shield 610, mesh-like area
620, connecting line zone 612, mesh part 616, netting twine part
614, semi-opaque region 622, full photic zone
Embodiment
Can be further understood by following detailed Description Of The Invention about technical scheme of the present invention and feature.
Please refer to shown in Fig. 4 A to Fig. 4 D, for reflecting electrode of the present invention is made flow process one specific embodiment.Present embodiment describes at single salient point reflecting electrode.Shown in Fig. 4 A, at first, but coating one heat flow organic layer 320 is in the upper surface of a substrate 300.Then, see through the light shield 200 of a tool half penetration region, this organic layer 320 partly exposes.Also please refer to shown in Fig. 4 B simultaneously, this figure is a light shield 200 of being inspected this tool half penetration region by the top of Fig. 4 A.As shown in FIG., this light shield 200 comprises that a hexagonal light tight district 222, is surrounded on semi-opaque region 224 and the opening 226 of the photic zone 225 of light tight district 222 peripheries, between light tight district 222 and photic zone 225.Wherein, the light penetration rate of opening 226 is 100%, and the light penetration rate of photic zone 225 is greater than semi-opaque region 224, and the light penetration rate of semi-opaque region 224 is again greater than the light penetration rate in light tight district 222.
See through 200 pairs of organic layers 320 of this light shield and expose, and the appropriateness control time shutter, first district 322, second district 324, the 3rd district 325 and the 4th district 326 can in organic layer 320, be formed.Correspond to light tight district 222, semi-opaque region 224, photic zone 225 and opening 226 on the light shield 200 respectively.Wherein first district, 322 exposure depth, the 3rd districts 325 unexposed, that second district 324 has organic layer 320 thickness 30%-70% have the exposure depth of organic layer 320 thickness 70%-100%.And first district 322 is hexagon, and the 3rd district 325 is surrounded on first district, 322 peripheries, and second district 324 is between first district 322 and the 3rd district 325.
The position in above-mentioned first district 322, i.e. the salient point position of this salient point reflecting electrode.In addition, Bao Guang the 4th district 326 and second district 324 keep enough distances fully, with the position of definition intraconnections.This intraconnections is as the interface channel of reflecting electrode and thin film transistor (TFT), and this thin film transistor (TFT) 50 is as switch control operation voltage input reflection electrode whether.
Subsequently, please refer to Fig. 4 C, develop and remove the part of organic layer 320 exposures.Because the exposure depth in first district 322, second district 324 and the 3rd district 325 has nothing in common with each other, therefore, position in first district 322, second district 324 and the 3rd district 325 produces stepped protruding 328, and, form a window 330 with the structure (as thin film transistor (TFT)) below the exposure organic layer 320 in the 4th district 326.Then, shown in Fig. 4 D, the organic layer 320 after this development is imposed hot-fluid, organic layer 320 materials are flowed again, so that stepped protruding 328 change mild curved protrusion 332 into and the formation salient point.Subsequently, make a metallic reflection electrode layer 360 again in the upper surface of organic layer 320.This metallic reflection electrode layer 360 is inserted within the window 330 simultaneously, forms an intermetallic intraconnections metallic reflection electrode layer 360 is connected with the thin film transistor (TFT) (not shown) that is positioned at the below.
In the above-described embodiments, corresponding first district 322 is hexagon in light tight district 222 on the light shield and the organic layer 320, so also is not limited thereto.Light tight district 222 can also present patterns such as pentagon, circle with corresponding first district 322.
As shown in Figure 2, even if in the reflecting electrode of single pixel 40, also have a plurality of salient point 42 uniformly dispersings usually wherein.Therefore, with a specific embodiment, please refer to shown in Figure 5, netted light shield 600 used in the present invention, divide into a mesh-like area 610 and a connecting line zone 620, wherein, the mesh part 612 of mesh-like area 610 is corresponding to the position of each salient point, and 616 of mesh part 612 and netting twine parts have a semi-opaque region 614.And connecting line zone 620 has a full photic zone 622, with the position of definition intraconnections.Mesh part 612 is corresponding to the position of each salient point 42 on the reflecting electrode 40, and its light penetration rate is less than the light penetration rate of semi-opaque region 614, and the light penetration rate of netting twine part 616 is greater than the light penetration rate of semi-opaque region 614.And with regard to a specific embodiment, mesh part 612 is light tight, and netting twine part 616 is the height printing opacity for semi-opaque region 614.Simultaneously, the area of semi-opaque region 614 is greater than the area of mesh part 612, and in Fig. 4 D, the carrying out of hot-fluid processing procedure rises and falls gently to guarantee curved surface, but and guarantee that metallic reflection electrode layer 360 uniform depositions are on this curved surface.
Therefore, through overexposure and development step, can form a plurality of stepped projectioies that are separated from each other on the organic layer surface that corresponds to mesh-like area 610.In other words, please be simultaneously with reference to shown in Fig. 4 A, see through to use the netted light shield 600 of Fig. 5, can form the 3rd district 325 netted and highly exposure, be distributed in mesh part and unexposed first district 322 and be positioned at first district 322 and second district 324 that 325 in the 3rd district and minuent are exposed.In addition,, also form a window simultaneously, required in order to follow-up making metal interconnecting at the organic layer that corresponds to connecting line zone 620 through this exposure and development step.
Above-mentioned netted light shield 600 is in order to make the salient point reflecting electrode.Yet netted light shield also can be applicable to the making of concave point reflecting electrode.Be applied to the making of concave point reflecting electrode when netted light shield, mesh wherein partly corresponds to the concave point position of concave point reflecting electrode, the light penetration rate of mesh part is greater than the light penetration rate of semi-opaque region, and the light penetration rate of netting twine part is less than the light penetration rate of semi-opaque region.And with regard to a specific embodiment, the netting twine part is light tight, and semi-opaque region has the light penetration rate of 30%-70%, and mesh part height printing opacity for semi-opaque region.
Please refer to Fig. 6 A to Fig. 6 D, show another embodiment of reflecting electrode making flow process of the present invention.This embodiment describes at the concave reflection electrode.As shown in Figure 6A, at first, but coating one heat flow organic layer 520 is in the upper surface of a substrate 500.Then, see through the light shield 400 of a tool half penetration region, this organic layer 520 partly exposes.Also please refer to shown in Fig. 6 B simultaneously, this figure is a light shield 400 of being inspected this tool half penetration region by the top of Fig. 6 A.As shown in FIG., this light shield 400 comprises that a hexagon photic zone 422, is surrounded on semi-opaque region 424 and the opening 426 of the light tight district 425 of photic zone 422 peripheries, between photic zone 422 and light tight district 425.Wherein, the light penetration rate of opening 426 is 100%, and the light penetration rate of photic zone 422 is greater than semi-opaque region 424, and the light penetration rate of semi-opaque region 424 is again greater than the light penetration rate in light tight district 425.
See through 400 pairs of organic layers 520 of this light shield and expose, and the appropriateness control time shutter, first district 522, second district 524, the 3rd district 525 and the 4th district 526 can in organic layer 520, be formed.Correspond to photic zone 422, semi-opaque region 424, light tight district 425 and opening 426 on the light shield 400 respectively.Wherein, first district 522 is a hexagonal complete exposure area, and second district 524 has the exposure depth of organic layer thickness 30%-70%, and is surrounded on first district, 522 peripheries with certain width, and the 3rd district 525 is unexposed, and surrounds second district 524.In addition, the 4th district 526 is exposure fully also, and keeps enough distances with second district 524, with the position of definition intraconnections.And this intraconnections is thought running in order to feed an operating voltage to reflecting electrode.
Subsequently, please refer to Fig. 6 C, the exposed portion in the removal organic layer 520 that develops.Because the exposure depth in first district 522, second district 524 and the 3rd district 525 has nothing in common with each other, and therefore, can form a stepped pothole 528 in the position in first district 522 and second district 524, and form a window 530 in the 4th district 526.Then, shown in Fig. 6 D, this organic layer 520 is imposed hot-fluid, organic layer 520 materials are flowed again, inserting in this stepped pothole 528 and to make the edge of stepped pothole 528 mild, and form a mild curved surface pothole 532.Subsequently, make a metallic reflection electrode layer 560 again, simultaneously, insert among the above-mentioned opening 530, metallic reflection electrode layer 560 is connected with the thin film transistor (TFT) (not shown) that is positioned at the below to form an intermetallic intraconnections in the upper surface of organic layer 520.
Compared to the making flow process of traditional salient point reflecting electrode, the present invention has following advantage:
One, in the making flow process of reflecting electrode of the present invention, see through light shield 200 with semi-opaque region, single exposure organic layer 320 produces second district 324 and the 3rd district 325 that highly exposes of unexposed first district 322, low exposure, simultaneously to form stepped protruding 328.Therefore, can simplify the making flow process of reflecting electrode, and shorten the spent time of processing procedure.
Two, in processing procedure of the present invention, only use light shield 200 one, thereby exempted in the processing procedure of traditional three road light shield M1, M2 and M3, before each road micro-photographing process, must aim at, then capable again process of exposing.Thereby can avoid changing the required consumed time cost of process of light shield.
Though the present invention discloses with specific embodiment; but it is not in order to limit the present invention; any those skilled in the art; the displacement of the equivalent assemblies of under the prerequisite that does not break away from design of the present invention and scope, having done; or, all should still belong to the category that this patent is contained according to equivalent variations and modification that scope of patent protection of the present invention is done.
Claims (10)
1. method for making that is applied to the reflecting electrode of reflective flat-panel screens comprises:
One substrate is provided;
But the organic layer of coating one heat flow is in the upper surface of this substrate;
The light shield that sees through a tool half penetration region this organic layer that partly exposes, with second district that forms unexposed first district, low exposure in this organic layer and the 3rd district that highly exposes, and this second district is positioned between this first district and the 3rd district;
Develop and remove the part of exposing in this organic layer, to form step structure at this organic layer upper surface;
This organic layer is imposed hot-fluid, make this step structure change curved-surface structure into; And
Make a metallic reflection electrode layer in the upper surface of this curved-surface structure.
2. method for making as claimed in claim 1 is characterized in that: behind this organic layer that partly exposes, formed this second district has the exposure depth of this organic layer thickness 30%-70%.
3. method for making as claimed in claim 1 is characterized in that: behind this organic layer that partly exposes, formed the 3rd district has the exposure depth of this organic layer thickness 70%-100%.
4. method for making as claimed in claim 1, it is characterized in that: in the step of this organic layer that partly exposes, form the 4th district that exposes fully simultaneously, the position of definition intraconnections, and in the step of follow-up this organic layer of development, simultaneously form a window, use and make an intermetallic intraconnections to feed operating voltage in the position in the 4th district.
5. method for making as claimed in claim 1 is characterized in that: formed this first district of this organic layer that partly exposes is polygon, and the 3rd district is netted.
6. method for making as claimed in claim 1 is characterized in that: formed the 3rd district of this organic layer that partly exposes is polygon, and this first district is netted.
7. a light shield in order to make the pixel electrode of reflective flat-panel screens, is characterized in that, described light shield comprises:
One mesh-like area in order to the position of definition reflecting electrode, between the mesh of this mesh-like area part and the netting twine part, accompany semi-opaque region, and the area of this semi-opaque region is greater than the area of this mesh part; And
One connecting line zone comprises a full photic zone, with the position of definition intraconnections.
8. light shield as claimed in claim 7 is characterized in that, the light penetration rate of described mesh part is less than this semi-opaque region, and the light penetration rate of this netting twine part is greater than this semi-opaque region.
9. light shield as claimed in claim 7 is characterized in that, the light penetration rate of described netting twine part is less than this semi-opaque region, and the light penetration rate of this mesh part is greater than this semi-opaque region.
10. light shield as claimed in claim 7 is characterized in that, the light penetration rate of described semi-opaque region is 30%-70%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100375314A CN100339754C (en) | 2004-04-28 | 2004-04-28 | Fabrication method for reflecting electrode applied in reflective panel display and photo mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100375314A CN100339754C (en) | 2004-04-28 | 2004-04-28 | Fabrication method for reflecting electrode applied in reflective panel display and photo mask |
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| Publication Number | Publication Date |
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| CN1570739A true CN1570739A (en) | 2005-01-26 |
| CN100339754C CN100339754C (en) | 2007-09-26 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102362227A (en) * | 2009-03-13 | 2012-02-22 | 株式会社尼康 | Exposure apparatus, exposure method, and method of manufacturing device |
| WO2014124568A1 (en) * | 2013-02-17 | 2014-08-21 | 京东方科技集团股份有限公司 | Thin film transistor, array substrate, manufacturing method thereof, and display device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3213242B2 (en) * | 1996-10-23 | 2001-10-02 | シャープ株式会社 | Reflection plate, reflection type liquid crystal display device and method of manufacturing the same |
| JP2003195326A (en) * | 2001-12-26 | 2003-07-09 | Kyocera Corp | Translucent liquid crystal display device |
| JP3917417B2 (en) * | 2001-12-11 | 2007-05-23 | シャープ株式会社 | Reflective liquid crystal display |
| JP2003195329A (en) * | 2001-12-27 | 2003-07-09 | Sharp Corp | Display device and its manufacturing method |
| TWI230304B (en) * | 2002-03-04 | 2005-04-01 | Sanyo Electric Co | Display device with reflecting layer |
-
2004
- 2004-04-28 CN CNB2004100375314A patent/CN100339754C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102362227A (en) * | 2009-03-13 | 2012-02-22 | 株式会社尼康 | Exposure apparatus, exposure method, and method of manufacturing device |
| WO2014124568A1 (en) * | 2013-02-17 | 2014-08-21 | 京东方科技集团股份有限公司 | Thin film transistor, array substrate, manufacturing method thereof, and display device |
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| CN100339754C (en) | 2007-09-26 |
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