CN1567602A - Method for making a multi-electrode gallium nitride based semiconductor device - Google Patents
Method for making a multi-electrode gallium nitride based semiconductor device Download PDFInfo
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- CN1567602A CN1567602A CNA031387365A CN03138736A CN1567602A CN 1567602 A CN1567602 A CN 1567602A CN A031387365 A CNA031387365 A CN A031387365A CN 03138736 A CN03138736 A CN 03138736A CN 1567602 A CN1567602 A CN 1567602A
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Abstract
The invention discloses a method of making multi-electrode gallium nitride-base semiconductor device, including the following steps: providing a gallium nitride photoelectronic or electronic device with two or above same-side electrodes, on which a 0.5 mum-3 mum thick metal layer is formed by plating, spattering or evaporating; on the condition of being lower than metal fusing temperature, by pressurizing, or pressurizing and heating, linking the extensional side of the gallium nitride photoelectronic or electronic device onto a good-heat conductivity substrate. The invention uses the character that the hardness of gallium nitride-base device is far higher than that of other semiconductor materials, adopts a process of mainly pressurizing to bind the gallium nitride photoelectronic or electronic device with the heat conductive substrate without metal fusion, and as binding, there is no liquid existing and thus it can not generate siphonage and short circuit.
Description
Technical field
The present invention relates to the photoelectron technology field, especially a kind of manufacture method of multi-electrode GaN-based semiconductor device.
Technical background
Gallium nitrate based optoelectronics industry or electronic device are present main research and industrialized development fields.Wherein gallium nitride based light emitting diode has been used to demonstration, decoration, illumination etc. widely in the economic life.By adopting different materials and structure, light-emitting diode can radiation wavelength covers the scope from the ultraviolet to the green glow, by the fluorescence conversion, has also realized white light emitting diode.Gallium nitride-based material also is used for laser, high power transistor and sun blind spot detector.
Gallium-nitride-based devices is grown on carborundum substrate or the Sapphire Substrate usually.The Sapphire Substrate conductive coefficient is little, and for the high power gallium-nitride-based devices on the Sapphire Substrate, in order to raise the efficiency and reliability, heat radiation is a key problem in technology.For solving heat dissipation problem, flip-chip is a common method.
Except the heat radiation purpose, flip-chip helps the light-emitting diode light extraction efficiency, the light receiving efficiency of the frequency response of high power transistor and sun blind spot detector.
Existing Flipchip method has: the conducting resinl gummed; Devices with Solder Bonding.These methods all have a common shortcoming, and that is exactly in chip and the substrate adhesion process, have the adherend that flows.For single electrode chip, the method still can, but to the multi-electrode chip, because the siphonage of the adherend that flows, too little spacing will cause the short circuit of adherend between electrode, cause electric pole short circuit.For avoiding short circuit, chip and basal spacing can not be too little, and too big spacing will have a strong impact on the heat transfer efficiency of substrate.
Summary of the invention
The present invention proposes a kind of manufacture method of multi-electrode GaN-based semiconductor device, may further comprise the steps:
The gallium nitride photoelectron or the electronic device that have more than two or two in same-side electrodes are provided, and forming a thickness with plating, sputter or evaporation on it is the metal material layer of 0.5um--3um; Be lower than under the fused temperature conditions of metal,,, be bonded in the good substrate of thermal conductivity the epitaxial-side of gallium nitride photoelectron or electronic device by pressurization or pressurization and heating.
In pressure process, add ultrasonic wave, improve bonding quality; Needing the commute oxidized metal surface to carry out the deoxidation film before the bonding handles; Two above chips are bonded in the substrate of similar number simultaneously; The method that can adopt the bonding of colding pressing with gallium nitride photoelectron or electronic device directly and substrate bonding, bonding face contains the soft metal, as gold, silver, indium, lead or contain the alloy of above metal; Pressure limit is; Also can adopt diffusion bond legal, make the metal or alloy layer on gallium nitride photoelectron or the electronic device different with the metal level of substrate surface, bonding temperature less than metal and alloy thaw temperature under, the method by intermetallic diffusion realizes bonding; One side of bonding face contains metal, and as the alloy of gold, silver, lead, tin, bismuth, germanium, zinc or these metals, opposite side contains the metal or alloy face that is different from last side; The pressure limit scope is 1000-5000PSI, and temperature range is 80-250 degree centigrade.
The present invention utilizes the characteristics of gallium-nitride-based devices hardness much larger than other semi-conducting materials, employing is pressurised into main method, under the situation that no metal melts, realize the bonding of gallium nitride photoelectron or electronic device and thermal-conductivity substrate, no liquid exists when bonding, can there be siphonage, have avoided the multi-electrode bonding because the short circuit phenomenon that siphonage causes.
Description of drawings
Fig. 1 is bonded to gallium nitride LED chip for one embodiment of the invention the technical process at an aluminum-nitride-based end.
Specific embodiment
Embodiment one
A kind of method of the present invention for the method that adopts the bonding of colding pressing with chip directly and substrate bonding, owing to be bonded in and be lower than the fused temperature of metal and carry out chip no liquid existence when bonding with substrate, can there be siphonage, have avoided the strong short circuit phenomenon of closing of multi-electrode owing to siphonage ten million.Fig. 1 is according to the present invention, gallium nitride LED chip is bonded to the technical process at an aluminum-nitride-based end.(a) be the top view of a bipolar electrode beverage gallium base light emitting diode chip; (b) front view of gallium nitride LED chip for this reason; (c) be the top view at the aluminum-nitride-based end; (d) be the front view at the aluminum-nitride-based end; (e) be the front view right view of flip-chip to the aluminum-nitride-based end.Wherein, 1,2 are respectively the positive and negative electrode contact-making surface, have evaporated 0.5um to the 3um gold.Its contact-making surface pattern is produced by lithographic method or lift-off technology method; 3 is Sapphire Substrate; 4 is the extension luminescent layer; 5,6 are the soft metal of evaporation on the gold pad, a kind of as in gold, silver, lead, the indium, and its thickness is 2 to 15um; 7,8 is positive and negative electrode routing dish; 9 is the aluminum-nitride-based end.The keyboard process of closing of the present invention is: 1). earlier with the inversion of bipolar electrode gallium nitride LED chip and at aluminum-nitride-based the end; 2). align with 61 and 5,2; 3). exerted pressure in the gallium nitride LED chip back side.For the chip of a 13mil * 13mil, pressure limit is the 30-200 gram.The bonding of colding pressing is by contact the bonding of formation after the soft metal deformation closely with another metal.
Embodiment two
Another kind of form of the present invention is for using diffusion interlinked method.Because gallium-nitride-based devices hardness is big, and alloy temperature height (＞500 ℃), its usual method of diffusion interlinked method that can utilize high temperature, high pressure is that substrate surface is formed a kind of metal alloy different with chip surface with plating, sputter or method of evaporating, then chip is contacted with the tight pressing in its end, bonding temperature less than metal and alloy thaw temperature under, the method by intermetallic diffusion realizes bonding.Diffusion interlinked technology is similar to the bonding of colding pressing.In figure one, 5,6 metals are tin.In pressurization (pressure limit is the 100-300 gram), to chip and substrate heating (temperature 80-250 ℃).Pressurization makes gold contact closely with tin, and heating makes gold and tin diffuse to form alloy mutually.
Claims (5)
1, a kind of manufacture method of multi-electrode GaN-based semiconductor device, its step provides gallium nitride photoelectron or the electronic device that has more than two or two in same-side electrodes, and forming a thickness with plating, sputter or evaporation on it is the metal material layer of 0.5um--3um; Be lower than under the fused temperature conditions of metal,,, be bonded in the good substrate of thermal conductivity the epitaxial-side of gallium nitride photoelectron or electronic device by pressurization or pressurization and heating.
2, the manufacture method of a kind of multi-electrode GaN-based semiconductor device according to claim 1 is characterized in that adding ultrasonic wave in pressure process.
3, the manufacture method of a kind of multi-electrode GaN-based semiconductor device according to claim 1 is characterized in that needing the commute oxidized metal surface to carry out the processing of deoxidation film before the bonding.
4, the manufacture method of a kind of multi-electrode GaN-based semiconductor device according to claim 1 is characterized in that two above chips are bonded in the substrate of similar number simultaneously; The method that can adopt the bonding of colding pressing with gallium nitride photoelectron or electronic device directly and substrate bonding, bonding face contains the soft metal, as gold, silver, indium, lead or contain the alloy of above metal; Pressure limit is 400-3000PSI.
5, the manufacture method of a kind of multi-electrode GaN-based semiconductor device according to claim 1, it is characterized in that to adopt diffusion bond legal, make the metal or alloy layer on gallium nitride photoelectron or the electronic device different with the metal level of substrate surface, bonding temperature less than metal and alloy thaw temperature under, the method by intermetallic diffusion realizes bonding; One side of bonding face contains metal, and as the alloy of gold, silver, lead, tin, bismuth, germanium, zinc or these metals, opposite side contains the metal or alloy face that is different from last side; Pressure limit is 100-5000PSI, and temperature range is 80-250 degree centigrade.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031387365A CN1567602A (en) | 2003-06-27 | 2003-06-27 | Method for making a multi-electrode gallium nitride based semiconductor device |
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| CNA031387365A CN1567602A (en) | 2003-06-27 | 2003-06-27 | Method for making a multi-electrode gallium nitride based semiconductor device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103305908A (en) * | 2012-03-14 | 2013-09-18 | 东莞市中镓半导体科技有限公司 | Composite substrate for GaN growth |
| CN103305909A (en) * | 2012-03-14 | 2013-09-18 | 东莞市中镓半导体科技有限公司 | Preparation method of composite substrate for GaN growth |
-
2003
- 2003-06-27 CN CNA031387365A patent/CN1567602A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103305908A (en) * | 2012-03-14 | 2013-09-18 | 东莞市中镓半导体科技有限公司 | Composite substrate for GaN growth |
| CN103305909A (en) * | 2012-03-14 | 2013-09-18 | 东莞市中镓半导体科技有限公司 | Preparation method of composite substrate for GaN growth |
| WO2013135002A1 (en) * | 2012-03-14 | 2013-09-19 | 东莞市中镓半导体科技有限公司 | Method for preparing composite substrate for gan growth |
| WO2013135001A1 (en) * | 2012-03-14 | 2013-09-19 | 东莞市中镓半导体科技有限公司 | Composite substrate used for gan growth |
| CN103305909B (en) * | 2012-03-14 | 2016-01-20 | 东莞市中镓半导体科技有限公司 | A kind of preparation method of the compound substrate for GaN growth |
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Owner name: XIAMEN SAN AN ELECTRONICS CO., LTD. Free format text: FORMER OWNER: SAN-AN ELECTRONICS CO., LTD., XIAMEN Effective date: 20071123 |
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