CN1567574A - Semiconductor package having heat sink - Google Patents
Semiconductor package having heat sink Download PDFInfo
- Publication number
- CN1567574A CN1567574A CNA031483690A CN03148369A CN1567574A CN 1567574 A CN1567574 A CN 1567574A CN A031483690 A CNA031483690 A CN A031483690A CN 03148369 A CN03148369 A CN 03148369A CN 1567574 A CN1567574 A CN 1567574A
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- CN
- China
- Prior art keywords
- substrate
- heat sink
- groove
- runs
- semiconductor package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention is a semiconductor packed component with cooling component, connecting at least a chip and a cooling component laid on the chip on a substrate, at least one angle end of the joint of the cooling component and the substrate is made with a through tank to make the cooling component fixed on the substrate by the adhesive material laid between the cooling component and the substrate, filling in the through tank and overflowing. The setting of the through tank makes the adhesive material obtain locking function and simultaneously increases the adhesive area, thus able to make the cooling component firmly located on the substrate. In addition, the through tank can also effectively slow down the falling-off problem of the cooling component caused by the stress centralization at the angle end.
Description
Technical field
The invention relates to a kind of semiconductor package part,, can promote the radiating efficiency of this semiconductor package part particularly about a kind of semiconductor package part with heat sink.
Background technology
Crystal covering type ball grid array (Flip Chip Ball Grid Array, FCBGA) semiconductor package part is a kind of encapsulating structure that covers crystalline substance and ball grid array that has simultaneously, make at least one chip borrow a plurality of welding blocks (Solder Bump) to be electrically connected on the surface of substrate, and on another surface of this substrate (normally with put the crystal face facing surfaces), planted a plurality of as I/O (Input/Output, I/O) Duan soldered ball (Solder Ball).For getting rid of the heat that the chip operation produces, also be provided with a heat sink in the above-mentioned semiconductor package part, as United States Patent (USP) the 5th, 311,402 and 5,637, No. 920 cases, this heat sink can be borrowed adhesive (Adhesive) or scolder sticking putting on substrate such as (Solder), and its area often is connected on the chip to cover greater than chip area, and effectively dissipation is from the heat of chip.Yet, utilize adhesive or scolder, with heat sink be bonded in the plane bonding way of substrate, may be because of problems such as stress between the cleanliness factor of heat sink or substrate bonding face or heat sink and substrate, produce the layering (Delamination) between heat sink and substrate, cause heat sink to come off; In addition, when the substrate that is stained with heat sink is waited as vibrations by external force, also may produce the phenomenon that heat sink comes off.Simultaneously, be subject to its effective adhesion area owing to adhere to the adhesion engaging force that adhesive between heat sink and substrate or scolder produce, the contact area between heat sink and substrate just, so under the compact development trend of semiconductor package part, one can increase adhesion area by strengthening contact area limited between heat sink and substrate.
In view of this, the existing tool mode that takes this opportunity is fixed on technology on the substrate with heat sink.As United States Patent (USP) the 5th, 907, the encapsulating structure of No. 474 case propositions, be on heat sink, partly to offer many holes with substrate contacts, and corresponding position also is drilled with many holes on substrate, fixture as bolt etc. is embedded in the hole that heat sink and substrate correspond to each other, can connects heat sink and substrate, the location heat sink is on substrate.
The heat sink of above-mentioned each prior art possesses the structure that central authorities are formed with depression mostly, this structure must just can be made by the method for etching partially (Half-Etching) or (Forge) technology of forging usually, manufacture difficulty height and operation recover, and cause production cost high.
With respect to this, United States Patent (USP) the 6th, 188, No. 578 cases propose a kind of with low cost and make simple punch forming (Stamping) formula heat sink, thisly strike out the pattern heat sink as shown in Figure 8, have and cover the par 80 that is connected on the chip, the edge of this par 80 is extended with many support portions 81 downwards, the end of this support portion 81 has also outwards extended contact site 82 respectively, engages with substrate by this contact site 82.
Yet, this pattern heat sink that strikes out when borrowing that adhesive or scolder etc. are sticking to be put on substrate, very easily be subjected to the contact site 82 of heat sink or substrate bonding plane cleanliness factor or suffer to cause coming off of heat sink as the influence of external force such as vibrations; In addition, because of the contact site 82 of heat sink and the thermal stress of the dislocation of the heat between substrate (Thermal Mismatch) generation, the syndeton destruction that also may produce between heat sink and substrate causes layering, and then produces the phenomenon that heat sink comes off.Simultaneously, because this contact site 82 of pattern heat sink and the cause that the contact area between substrate reduces more of striking out causes the adhesion area between its heat sink and substrate more inadequate.
In addition, United States Patent (USP) the 6th, 376, No. 907 cases also propose a kind of par 90 as shown in Figure 9 and can cover and be connected on the chip, and the heat sink that engages with substrate by the junction surface 91 that also outwards extends downwards.This heat sink is that 91 end place, angle forms breach 92 at the junction surface, solves the stress problem that accumulate at 91 end place, angle in the junction surface.
This be since the end place, angle at the junction surface 91 of this heat sink if when not forming breach, then, puts when substrate this heat sink that does not form breach when directly gluing with its junction surface 91, promptly can be because of (the Coefficient of Thermal Expansion of the thermal coefficient of expansion between heat sink material and baseplate material, CTE) difference, make the semiconductor package part of finishing packaging process follow-up by the degree test in, as temperature cycling test (Thermal Cycling Test, TCT), thermal shock test (Thermal ShockTest, TST), or high-temperature storage test (High Temperature Storage Life Test, HTST) etc. may experience very big variations in temperature, the difference that causes the thermal strain amount, on the composition surface between this heat sink and substrate, produce thermal stress, and derive the problem on the various qualities.For example, when packaging part is in when heating environment, because the thermal coefficient of expansion of heat sink is bigger than the thermal coefficient of expansion of substrate, so the thermal expansion deformation quantity that heat sink produces is also just big than substrate, thus the generation of the composition surface between heat sink and substrate thermal expansion stress.Otherwise when packaging part was in the cooling environment, the heat sink that thermal coefficient of expansion is bigger also produced bigger thermal contraction deformation quantity, so also the composition surface between heat sink and substrate produces thermal shrinkage stress.This type of thermal stress that causes because of temperature change be as can't discharging smoothly, can be very easily residual and concentrate on the end place, angle at the discontinuous heat sink of stress distribution junction surface 91, and the fatigue of accelerated material is easy to cause structural destruction by the composition surface at this end place, angle.
Therefore, by form breach 92 at end place, the angle at heat sink junction surface 91, can be in the above-mentioned thermal stress that is created in because of variations in temperature between heat sink junction surface and substrate, the effect of performance buffering when end place in angle transmits, so that stress is discharged from this breach 92, eliminate stress residual with accumulate, and improve problem such as the destroyed and fatigue of materials of connected structure between heat sink and substrate.
When but this heat sink that 91 end place, angle forms breach 92 at the junction surface is bonded on the substrate, the still difficult cleanliness factor that overcomes above-mentioned bonding plane because of heat sink or substrate is not good enough, suffer influence as external force such as vibrations, or because of the thermal stress between heat sink and substrate causes producing layering (Delamination) between heat sink and substrate, and then problems such as cause that heat sink comes off.Simultaneously, because the contact area between its junction surface 91 and substrate is still very limited, be difficult to further promote the adhesion engaging force between its heat sink and substrate.
Therefore, how addressing the above problem, with the adhesion strength between enhancement heat sink and substrate, and make the heat sink strong fix on substrate, is an important topic in fact.
Summary of the invention
For overcoming the shortcoming of above-mentioned prior art, main purpose of the present invention is to provide a kind of semiconductor package part with heat sink, be to engage partly end place, angle with substrate at heat sink to offer and run through groove (Slot), heat sink is borrowed be laid between heat sink and the substrate and insert this adhesivity material that runs through in the groove and be fixed on the substrate, run through the setting of groove by this, make and insert this adhesivity material that runs through in the groove locking (Lock) function can be provided, make the heat sink strong fix on substrate.
Another object of the present invention is to provide a kind of semiconductor package part, make heat sink when firmly being positioned on the substrate, also can remove the stress concentration phenomenon at this place effectively by the groove that runs through at the end place, angle that is opened in heat sink with heat sink.
A further object of the present invention is to provide a kind of semiconductor package part with heat sink, can effectively increase the adhesion area of the adhesivity material that engages heat sink and substrate, further promotes the adhesion engaging force between heat sink and substrate.
For reaching above-mentioned and other purpose, a kind of semiconductor package part with heat sink of the present invention comprises: substrate has upper surface and with respect to the lower surface of this upper surface; At least one chip is arranged on the upper surface of this substrate, and borrows many conductive components to be electrically connected to this substrate; Heat sink, be arranged on the upper surface of this substrate and cover and be connected to this chip, this heat sink has and covers the par that is connected on this chip, extend to the support portion of substrate from this edge, par, and, this par is supported by this support portion by the junction surface that the end of this support portion outwards extends, the frame support is above this chip, and engage with the upper surface of substrate by this junction surface, simultaneously, the end place, angle at this junction surface offers runs through groove; The adhesivity material is laid between this heat sink junction surface and this upper surface of base plate and inserts running through in the groove and overflow this and running through groove of this junction surface, borrows affixed this heat sink of this adhesivity material on this substrate; And a plurality of soldered balls, plant on the lower surface of this substrate.
The advantage of above-mentioned semiconductor package part is to utilize and offers the heat sink that runs through groove, make the adhesivity material be laid between heat sink and the substrate and insert this run through in the groove and overflow this run through groove and can affixed heat sink on substrate; Just, the setting that runs through groove makes the adhesivity material that lays wherein and overflow, and locking (Lock) function can be provided, and to promote the engaging force between heat sink and substrate, makes the heat sink strong fix on substrate.
Therefore, because the cleanliness factor of heat sink or substrate bonding face is not good enough, suffer influence as external force such as vibrations, or because of heat sink that thermal stress caused between heat sink and substrate and the layering (Delamination) between substrate, and then problems all can thoroughly achieve a solution to cause that heat sink comes off etc., also can separate the phenomenon that de-stress concentrates on the end place, angle of this heat sink effectively by the groove that runs through at the end place, angle that is opened in heat sink simultaneously.
In addition, be laid between heat sink and the substrate and insert this and run through in the groove and the adhesion area that overflows this adhesivity material that runs through groove increases, can significantly promote the adhesion engaging force between heat sink and substrate owing to run through being arranged so that of groove.
Description of drawings
Fig. 1 is the cutaway view of the semiconductor package part of preferred embodiment of the present invention;
Fig. 2 is the top view of the heat sink of displayed map 1;
Fig. 3 is the top view that shows a time embodiment of heat sink of the present invention;
Fig. 4 is the top view that shows another embodiment of heat sink of the present invention;
Fig. 5 is the top view that shows the another embodiment of heat sink of the present invention;
Fig. 6 is the top view of an embodiment again that shows heat sink of the present invention;
Fig. 7 A shows the schematic diagram that runs through groove interior wall construction embodiment;
Fig. 7 B shows the schematic diagram that runs through another embodiment of groove interior wall construction;
Fig. 8 is the schematic diagram that shows heat sink of the prior art; And
Fig. 9 is the schematic diagram that shows another heat sink of the prior art.
Embodiment
Embodiment
Below promptly cooperate Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5 and Fig. 6, describe the preferred embodiment with semiconductor package part of heat sink of the present invention in detail.
Fig. 1 is the semiconductor package part that shows preferred embodiment of the present invention.As shown in the figure, semiconductor package part of the present invention is to use substrate 10 as chip bearing member (Chip Carrier), and this substrate 10 is mainly made with the resin material of using always as epoxy resin (Epoxy Resin), polyimides (Polyimide), BT (Bismaleimide Triazine), FR4 etc.
Substrate 10 has the lower surface 12 that upper surface 11 reaches with respect to this upper surface 11, predetermined position on this upper surface 11 is formed with many weld pads (Bond Pad) 13, for the usefulness that plants welding block (SolderBump) 20, be formed with a plurality of solder ball pads (Ball Pad) 14 on the lower surface 12 of substrate 10, for connecing the usefulness of establishing with soldered ball (Solder Ball) 30.The operation of substrate 10 belongs to prior art, in this not repeat specification.
Chip 40 possesses the action face (ActiveSurface) 41 that is laid with electronic building brick and circuit (figure is mark) and with respect to the non-action face (Non-activeSurface) 42 of this action face 41, wherein, be formed with many weld pads 43 on the action face 41 of chip 40, make this weld pad 43 can be corresponding to the weld pad 13 of substrate 10.The action face 41 of this chip 40 is to borrow a plurality of conductive components as welding block 20 to connect on the upper surface 11 that is located at substrate 10, the two ends of each welding block 20 is welded respectively be connected to corresponding pad 13,43, makes chip 40 be electrically connected to substrate 10 by means of it.The conductive component of this utilization such as welding block, the structure that chip is connected with substrate are crystalline substance (Flip-Chip) technology of covering, and the big advantage of one is effectively to shorten the electrical connection path between chip and substrate, can promote to electrically connect quality.
Can lay insulating properties material 21 as resin etc. between chip 40 and substrate 10 at this,, make welding block 20 being insulated property materials 21 coat the weld force that to promote 10 of chip 40 and substrates to fill the space of 20 of adjacent paddle.The method of this filling chip and substrate gap is called bottom filler (Underfill) technology, for example available existing glue (Dispense) mode is injected the insulating properties material, and borrow capillarity (Capillarity) to make the insulating properties material fill up space between adjacent paddle etc., this bottom filler technology belongs to prior art, in this not repeat specification.
Heat sink 50 is arranged on the non-action face 42 of the upper surface 11 of substrate 10 and chip 40, and borrow viscose glue as heat-conducting glue 60 etc., bonding heat sink 50 and chip 40 make chip 40 be covered by this heat sink 50, are isolated from the outside to avoid the erosion of extraneous aqueous vapor and pollutant.The effect of heat sink 50 is to make the heat of chip 40 operation generations, can dissipate to the external world via heat sink 50 by heat-conducting glue 60, thereby can promote the heat radiation function of semiconductor package part.This heat sink 50 can use Heat Conduction Material, make with the punch forming technology and to have par 51, extend to the support portion 52 of substrate 10 from the edge of this par 51, and the structure at the junction surface 53 that outwards extends by the end of this support portion 52, this par 51 is supported by this support portion 52, and frame support is above this chip 40, and engages with the upper surface 11 of substrate 10 by this junction surface 53.Simultaneously as shown in Figure 2, what the end place, angle at this junction surface 53 offered that the horizontal profile shape is " L " shape runs through groove 54, the upper surface 11 of substrate 10 is exposed partly at this run through in the groove 54.Run through groove 54 can be at the junction surface at least one place, end place, four angles of 53 offer.Adhesivity material 70, as adhesive (Adhesive) or scolder (Solder) etc., be to be laid between the upper surface 11 of the junction surface 53 of heat sink 50 and substrate 10, and impose suitable pressure, make adhesivity material 70 insert running through in the groove 54 and overflow this and running through groove 54 of junction surface 53 through extruding, toast (Curing) operation again, adhesivity material 70 is solidified.Because running through the groove 54 that runs through at the junction surface 53 of heat sink 50 is outer being exposed on the outer surface of heat sink 50, so can monitor the amount of laying of adhesivity material 70 easily; The adhesivity material 70 that runs through groove 54 when injection overflows this when running through groove 54, i.e. the existing sufficient adhesivity material 70 of expression is laid in and runs through in the groove 54 and 10 of the junction surface 53 of heat sink 50 and substrates, and more adhesivity material 70 need not to reinject.Insert running through in the groove 54 and overflowing the adhesivity material 70 that this runs through groove 54 of junction surface 53, after curing promptly as shown in Figure 1, running through the fastening structure 71 that forms similar rivet-like on the groove 54, the function of locking (Lock) can be provided, borrow this adhesivity material 70 that heat sink 50 is locked on substrate 10.
30 of a plurality of soldered balls plant the solder ball pad 14 on the lower surface 12 of substrate 10, this soldered ball 30 is the I/O (Input/Output as semiconductor package part, I/O) end, with external device such as printed circuit board (PCB) (Printed Circuit Board, figure the mark) etc. electric connection, make chip 40 be electrically connected to this external device and move by soldered ball 30.
Owing to above-mentionedly run through offering of groove 54, make adhesivity material 70 can and insert this between the junction surface 53 of the heat sink 50 that is laid in and substrate 10 and run through in the groove 54 and overflow this locking action that provides outside groove 54 is provided, firmly be bonded on heat sink 50 on the substrate; And because of running through the setting of groove 54, make the adhesion area at 53 at junction surface of adhesivity material 70 and heat sink 50 increase, so can significantly promote the adhesion engaging force of 10 of heat sink 50 and substrates, make the layering between heat sink and substrate, problem thoroughly achieves a solution even heat sink comes off etc.Simultaneously, run through groove 54 by the above-mentioned end place, angle that is opened in junction surface 53, also can cushion effectively and discharge because of variations in temperature, be created in 10 of junction surface 53 and substrates and be passed to the thermal stress at this end place, angle, separate de-stress and concentrate on the phenomenon at the end place, angle at this junction surface 53, avoid coming off of heat sink.
In addition, " L " font that the end place, angle at the junction surface 53 of above-mentioned heat sink 50 offers runs through groove 54 and does not exceed with shown in Figure 2, this shape that runs through groove also can be that as shown in Figure 3 horizontal profile shape run through groove 154, horizontal profile shape as shown in Figure 4 triangular in shape are the criss-cross groove that runs through that runs through groove 454 or possess any other suitable shape that groove 354, horizontal profile shape as shown in Figure 6 are " T " font that runs through that runs through groove 254, horizontal profile shape semicircular in shape as shown in Figure 5, still can obtain same effect.
Have again, the above-mentioned groove 54 that runs through, 154,254, the aperture that 354 or 454 inwall also can add shown in Fig. 7 A or Fig. 7 B can increase the surface area that runs through the groove inwall towards the structure 554 of an end convergent (Taper) or stepped replicated structures 654 or any other, and should strengthen adhesivity material 70 and run through the shape (figure mark) of the packing interaction between the groove inwall, further strengthen adhesivity material 70 and the adhesion area that runs through between groove, rabbet power with the adhesion that promotes 10 of heat sink 50 and substrates.
Claims (10)
1. the semiconductor package part with heat sink is characterized in that, this semiconductor package part comprises:
Substrate has upper surface and with respect to the lower surface of this upper surface;
At least one chip is arranged on the upper surface of this substrate, and borrows many conductive components to be electrically connected to this substrate;
Heat sink, be arranged on the upper surface of this substrate and cover and be connected to this chip, this heat sink has and covers the par that is connected to this chip, extend to the support portion of substrate from this edge, par, and by the junction surface that the end of this support portion outwards extends, make this par by this support portion support, frame supports above this chip, and engages with the upper surface of this substrate by this junction surface, simultaneously, the end place, angle at this junction surface offers and runs through groove;
The adhesivity material is between the junction surface of this heat sink that is laid in and the upper surface of this substrate and insert running through in the groove and overflow this and running through groove of this junction surface, to borrow affixed this heat sink of this adhesivity material on this substrate; And
A plurality of soldered balls plant on the lower surface of this substrate.
2. semiconductor package part as claimed in claim 1 is characterized in that, inserts this and runs through in the groove and overflow the adhesivity material that this runs through groove, runs through the fastening structure that the provided lock function of rivet-like is provided on the groove at this.
3. semiconductor package part as claimed in claim 1 is characterized in that, this horizontal profile shape that runs through groove is the L font.
4. semiconductor package part as claimed in claim 1 is characterized in that, this horizontal profile shape that runs through groove is triangular in shape.
5. semiconductor package part as claimed in claim 1 is characterized in that, this horizontal profile shape that runs through groove is cross.
6. semiconductor package part as claimed in claim 1 is characterized in that, this runs through the horizontal profile shape semicircular in shape of groove.
7. semiconductor package part as claimed in claim 1 is characterized in that, this horizontal profile shape that runs through groove is the T font.
8. semiconductor package part as claimed in claim 1 is characterized in that, this runs through groove is to be located at least in one of them the end place, angle at end place, four angles at this junction surface.
9. semiconductor package part as claimed in claim 1 is characterized in that, this inwall that runs through groove is to be provided with the structure of aperture towards an end convergent.
10. semiconductor package part as claimed in claim 1 is characterized in that, this inwall that runs through groove is to be provided with stepped replicated structures.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031483690A CN1272848C (en) | 2003-06-30 | 2003-06-30 | Semiconductor package having heat sink |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031483690A CN1272848C (en) | 2003-06-30 | 2003-06-30 | Semiconductor package having heat sink |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1567574A true CN1567574A (en) | 2005-01-19 |
| CN1272848C CN1272848C (en) | 2006-08-30 |
Family
ID=34472268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031483690A Expired - Fee Related CN1272848C (en) | 2003-06-30 | 2003-06-30 | Semiconductor package having heat sink |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1272848C (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100378972C (en) * | 2005-03-08 | 2008-04-02 | 台湾积体电路制造股份有限公司 | Heat spreader and package structure utilizing the same |
| US7441590B2 (en) | 2005-02-02 | 2008-10-28 | Denso Corporation | Radiator for semiconductor |
| CN102237385A (en) * | 2010-04-27 | 2011-11-09 | 安森美半导体贸易公司 | Semiconductor device and method of manufacturing the same |
| CN106797112A (en) * | 2014-10-23 | 2017-05-31 | 株式会社自动网络技术研究所 | The manufacture method of circuit structure and circuit structure |
| TWI618911B (en) * | 2017-05-24 | 2018-03-21 | Excel Cell Electronic Co Ltd | Wafer packaging device and heat sink and heat sink manufacturing method thereof |
| CN109037172A (en) * | 2017-06-12 | 2018-12-18 | 百容电子股份有限公司 | The packaging system and its radiating piece of chip and the manufacturing method of radiating piece |
| TWI659510B (en) * | 2016-10-14 | 2019-05-11 | 日商歐姆龍股份有限公司 | Electronic device and manufacturing method thereof |
-
2003
- 2003-06-30 CN CNB031483690A patent/CN1272848C/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7441590B2 (en) | 2005-02-02 | 2008-10-28 | Denso Corporation | Radiator for semiconductor |
| CN100433315C (en) * | 2005-02-02 | 2008-11-12 | 株式会社电装 | Radiator for semiconductor |
| CN100378972C (en) * | 2005-03-08 | 2008-04-02 | 台湾积体电路制造股份有限公司 | Heat spreader and package structure utilizing the same |
| CN102237385A (en) * | 2010-04-27 | 2011-11-09 | 安森美半导体贸易公司 | Semiconductor device and method of manufacturing the same |
| US8653529B2 (en) | 2010-04-27 | 2014-02-18 | On Semiconductor Trading, Ltd. | Semiconductor device and method of manufacturing the same |
| CN102237385B (en) * | 2010-04-27 | 2014-05-07 | 半导体元件工业有限责任公司 | Semiconductor device and method of manufacturing the same |
| CN106797112A (en) * | 2014-10-23 | 2017-05-31 | 株式会社自动网络技术研究所 | The manufacture method of circuit structure and circuit structure |
| CN106797112B (en) * | 2014-10-23 | 2019-03-19 | 株式会社自动网络技术研究所 | The manufacturing method of circuit structure and circuit structure |
| TWI659510B (en) * | 2016-10-14 | 2019-05-11 | 日商歐姆龍股份有限公司 | Electronic device and manufacturing method thereof |
| TWI618911B (en) * | 2017-05-24 | 2018-03-21 | Excel Cell Electronic Co Ltd | Wafer packaging device and heat sink and heat sink manufacturing method thereof |
| CN109037172A (en) * | 2017-06-12 | 2018-12-18 | 百容电子股份有限公司 | The packaging system and its radiating piece of chip and the manufacturing method of radiating piece |
| CN109037172B (en) * | 2017-06-12 | 2021-03-19 | 百容电子股份有限公司 | Packaging device of chip, heat dissipation member thereof and manufacturing method of heat dissipation member |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1272848C (en) | 2006-08-30 |
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