CN1567131A - Heat radiation unit for electronic component and production process thereof - Google Patents
Heat radiation unit for electronic component and production process thereof Download PDFInfo
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- CN1567131A CN1567131A CN 03142946 CN03142946A CN1567131A CN 1567131 A CN1567131 A CN 1567131A CN 03142946 CN03142946 CN 03142946 CN 03142946 A CN03142946 A CN 03142946A CN 1567131 A CN1567131 A CN 1567131A
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- 238000004519 manufacturing process Methods 0.000 title description 5
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- 239000010432 diamond Substances 0.000 claims abstract description 108
- 229910052751 metal Inorganic materials 0.000 claims abstract description 67
- 239000002184 metal Substances 0.000 claims abstract description 67
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- 238000012546 transfer Methods 0.000 claims abstract description 21
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- 229910052802 copper Inorganic materials 0.000 claims description 44
- 239000010949 copper Substances 0.000 claims description 44
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 230000008595 infiltration Effects 0.000 claims description 11
- 238000001764 infiltration Methods 0.000 claims description 11
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- 239000007788 liquid Substances 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
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- 239000000758 substrate Substances 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 238000003763 carbonization Methods 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
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- 239000007787 solid Substances 0.000 claims description 3
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- 239000007924 injection Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000012545 processing Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
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- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
It is an electron heat radiation part and its method and provides It provides an efficient heat radiation part and its method which applies to electron part with high heat with easy process and cost-saving .The method in this invention is to combine the metal with high heat transfer coefficient and the diamond into thin film and make it a thin slice.
Description
Technical field
The invention belongs to radiating piece and method for making thereof, particularly a kind of electronic element radiating spare and method for making thereof.
Background technology
Electronic component the time all can be supervened high heat in running, and the temperature that is produced during the high more electronic component running of efficient is high more, and high temperature will cause damage to electronic component, makes it can't bear to use, and therefore, is equiped with radiating piece mostly on the general electronic component.
With the heat radiation of computer CPU (central processing unit), the operation efficiency of the present CPU (central processing unit) of developing has reached about GHz, and the high heat that is therefore produced non-traditional heating radiator can be left rapidly.From the common founder Gordon.Moore of nineteen sixty-five Ying Daier (Intel) foretold the intensive trend of electric crystal will be for a long time with the Moore law of geometric progression multiplication (now doubling) for per 18 months, this law continued to the test that has faced the second law of thermodynamics at present in the past in 40 years. because the circuit of electronic component is done narrower and narrower, therefore heat will increase fast, so temperature has reached the critical point (with the silicon crystal is example, is about 90 ℃) that integrated circuit (IC) can bear.
The integrated circuit of electronic components such as present CPU (central processing unit) is many with copper sheet or compound substance, as copper and carbon, aluminium and carbonization silicon etc. as heating radiator (Heat Spreader), with aluminium or heat radiator made of copper (HeatSink) heat is conducted to the end of fin again, at last, quicken cross-ventilation to take away heat with fan again.Yet the mode of this kind heat radiation only can make the CPU (central processing unit) of about 80w avoid burning.But use the thinner wafer of future generation of 0.13 μ m or live width will make the power of CPU (central processing unit) surpass 100w, therefore traditional radiating mode has not applied and has used.
Though still have at present other heat dissipating method, as absorbing heat with circulation evaporation of water in the heat pipe or with thermoelectric effect, but still slow action cannot save a critical situation.
Again with the heat dissipation problem of electronic components such as light source semiconductor, pass through conductor from Edison's invention in 1879 with electric current, make it produce high heat and luminous begin to agitate gas to the nineteen thirty scientist with electric current from vehement lamp (Incandescent light), make it produce radiation and make fluorescent lamp and 1962, scientist again with electric current force semiconductor electronic and electric hole in conjunction with and develop light-emittingdiode (Light EmissionDiode; LED), be the rapid technological improvement of light source with LED over past ten years.LED with present Red Green Blue, be above standard the 20Lumens/watt of incandescent lamp of the brightness (Lumens/watt) that its unit energy can produce, and the led light source of astigmatism also is made into synchronous laser light, and be used in the record carrier in a large number, as the reading of laser disc, printing machine (as the laser printing), telecommunications industry (as the transmission of optical fiber) and even aspects such as traffic sign and billboard video picture.
The early stage material of led light source is many as gallium phosphide or arsenic, to be main as gallium arsenide with phosphorus, then becomes the main force from nitride in 1994.Because the atomic arrangement of nitride is closeer, therefore can be made as more high power and the more light source of broadband.
Because the power of LED and Laser Diode (Laser Diodes) is more and more higher, therefore the temperature of being followed also constantly rises to the upper limit that present semiconductor light sources can bear in recent years.In order to ensure semiconductor unlikely burning when luminous, therefore the semiconductor with LED is welded on the heat radiator, and heat radiator not only need have high thermoconductivity, also needs suitable coefficient of thermal expansion.Thus, semiconductor just can not make both peel off owing to producing stress with the heat radiator interface when expanding with heat and contract with cold.
In addition, the pyroconductivity of diamond is the highest, but because of its coefficient of thermal expansion far below general LED semiconductor material, as gallium arsenide, so both should not be directly welded together.In addition, heat radiator also can directly contact with semiconductor becomes electrode, but it must conduct electricity.Yet general heat radiator is resistive element or insulator as aluminium nitride, and therefore heat radiator being conducted electricity also becomes the problem that must solve.
Electronic component except CPU, LED and Laser Diodes also all faces the bottleneck of heat radiation as radio frequency, microwave generator, so need more effective heat radiator.
At last, because diamond is used for the necessary surfacing of heat radiator, but the diamond processing difficulties, it is the cost height not only, and the quality of machined surface is also not good, therefore how to avoid a large amount of processing of diamond, also is problem extremely to be solved.
Summary of the invention
The purpose of this invention is to provide a kind of good heat dissipation effect, be applicable to and produce high thermoelectric elements, easy to process, the electronic element radiating spare and the method for making thereof of saving manufacturing cost.
The thin slice that radiating piece of the present invention is made for the film that combines composition with the metal with high heat biography coefficient with diamond; The radiating piece method for making is laminated for diamond is combined into film with the metal with high heat transfer coefficient.
Wherein:
A kind of electronic element radiating spare, it is served as reasons and has the thin slice that the high hot diamond film that passes the metal of coefficient and combine with metal constitutes.
Metal with high heat biography coefficient is a copper.
Metal with high heat biography coefficient is an aluminium.
Diamond combines with sintering process with the metal system with high heat transfer coefficient, and it lies in heating under the high pressure, makes the binding of metal sintering one-tenth and diamond grains is included in interior structure.
High pressure heating down is that 0.2GPa～8GPa, temperature range be 900 ℃～1500 ℃ in conjunction with diamond with the pressure limit with metal of high heat transfer coefficient with sintering process.
Diamond combines with infiltration method with the metal system with high heat transfer coefficient, and it is that metal is at high temperature melted, and it is forced in the hole of diamond again.
The temperature range of metallic infiltration is 900 ℃～1500 ℃.
With infiltration method in conjunction with diamond with have the metal of high heat transfer coefficient before will plate other metals on the diamond earlier, and then molten metal poured into the metal coating that makes the moistening coating diamond of molten metal, and molten metal is sucked in the diamond hole of metal-plated membrane by capillary strength.
Diamond combines with pressurization with the metal system with high heat transfer coefficient, and it is by high pressure copper liquid to be injected the diamond hole.
The pressure limit that molten metal injects the diamond hole is 0.1GPa～8GPa.
Diamond combines with minute surface matrix method with the metal system with high heat transfer coefficient, and it lies in and is coating metal level on the template of minute surface; Utilize etching mode to etch cage shape framework; Deposit in the cage of copper framework with chemical vapour deposition technique and to separate out diamond film, establish substrate in the diamond film weldering, and in addition solid welding; Dissolving is removed template to obtain the very level and smooth diamond film in bottom surface.
Substrate is silicon, tungsten, carbonization silicon or silicon nitride plate.
Because radiating piece of the present invention is for combining the thin slice that the film of composition is made to have metal that high heat passes coefficient with diamond; The radiating piece method for making is laminated for diamond is combined into film with the metal with high heat transfer coefficient.Diamond and metal have excellent heat-conducting effect, and can directly be arranged on the electronic component; Diamond in the radiating piece does not need again through grinding or polishing, so easy to process, saving manufacturing cost; Can make large-area heat radiator, thus can make in a large number and unit cost very low; Good heat dissipation effect, be applicable to and produce high thermoelectric elements, and easy to process, save manufacturing cost, thereby reach purpose of the present invention.
Description of drawings
Fig. 1, be that electronic component of the present invention is with radiating piece method for making embodiment four synoptic diagram ().
Fig. 2, be that electronic component of the present invention is with radiating piece method for making embodiment four synoptic diagram (two).
Fig. 3, be that electronic component of the present invention is with radiating piece method for making embodiment four synoptic diagram (three).
Fig. 4, be that electronic component of the present invention is with radiating piece method for making embodiment four synoptic diagram (four).
Fig. 5, be that electronic component of the present invention is with radiating piece method for making embodiment four synoptic diagram (five).
Fig. 6, be electronic component of the present invention heat spreader structure schematic sectional view.
Embodiment
As shown in Figure 6, electronic component of the present invention is served as reasons with radiating piece and is had the thin slice that the high hot diamond film that passes the metal of coefficient and combine with metal constitutes.The metal that high heat passes coefficient is copper or aluminium.
Have metal that high heat passes coefficient and can constitute that length and width is about 50 μ m, thickness is 20 μ m cage shape copper or aluminium chassis 110.Diamond is to be deposited on the diamond film 12 that top, bottom surface in copper or aluminium chassis 110 grid are respectively uneven surface and minute surface, and borrows scolder 13 welderings of silver-bearing copper tin titanium to establish tungsten plate 14 in diamond film 12 coarse end faces.
The present invention also can be that the metal that passes coefficient with the high heat of having of copper or aluminium mixes with diamond and high pressure-temperature down extruding combine the diameter 36mm that the film of composition is made, thick thin rounded flakes l.8mm, wherein the diamond volume ratio is above 80%.
The electronic component of the present invention method for making of radiating piece
Embodiment one
The present invention system is combined into film with sintering process with diamond and the metal with high heat transfer coefficient and laminates, and it is diamond grains and copper or aluminum metal powder, and is seated in the tank body made of copper into oxygen-free copper.The ratio of diamond and copper can freely be adjusted, but surpasses 50% if the volume ratio of diamond is increased to, and then big melee can be mixed in advance, makes little diamond be fills up in the hole of big diamond, inserts in it with thinner copper powders may more thereafter.When improving the diamond ratio with this kind filling method, what the diameter of big diamond will be for little diamond is good more than 7 times.Because it is preferable that the heat of big diamond passes effect, therefore should use big diamond grains as far as possible.And then will put on it for the copper sheet of oxygen-free copper, (Cubic Preers) is forced into 50,000 atmospheric pressure with the cubic apparatus high-pressure unit, graphite-pipe is set in copper jar periphery and galvanization is heated so that the copper metal molten, high pressure down heating copper liquid can inject between diamond grains because of high pressure, copper is sintered into link and diamond grains is included in interior structure; At this moment, diamond grains itself also can be squeezed, and is made for diameter 36mm at last, the thin rounded flakes of thick 1.8mm.The binding slices of diamond and copper contains the diamond above volume ratio 80%, and its heat-conduction coefficient is more than 2 times of copper, so the made heat radiator of thin slice can be used for the CPU (central processing unit) or the LED of computer.
Because diamond is at high temperature, under 700 ℃, can produce oxidation or carbonization, therefore, under 900 ℃～1500 ℃ of pressure 0.2GPa～8GPa, temperature, carry out sintering.
When diamond grains and copper powder are mixed and made into heat radiator, even being no more than 50% usually, the volume ratio of diamond little diamond filled in the hole of big diamond with filling method, the overall volume of diamond also can not surpass 70%.
Embodiment two
The present invention system is combined into film with infiltration method (Infiltration) with diamond and the metal with high heat transfer coefficient and laminates, its for copper metal that will add at high temperature, 1100 ℃ of fusings, and under 900 ℃～1500 ℃ of temperature, carry out infiltration, so that it is forced in the hole of diamond, so that the diamond volume improves.But copper liquid can moisteningly not infiltrate through in the diamond hole, therefore, need earlier diamond to be plated other metals such as titanium, chromium, nickel, copper, and then copper liquid poured into, infiltrate the diamond hole with metal film auxiliary copper liquid, the metal coating that this moment, copper liquid just can moistening coating diamond, and by capillary strength (Capillary Force) copper liquid is sucked in the diamond hole of metal-plated membrane.The present invention should avoid the existence of oxygen when under 900 ℃～1500 ℃ of temperature, carrying out infiltration, so should heat under vacuum or inert atmosphere.
Embodiment three
The present invention system is combined into film with pressurization with diamond and the metal with high heat transfer coefficient and laminates, and it is by high pressure, under 0.1GPa～8GPa molten metal is injected the diamond hole, and this practice does not just need to plate metal film outside diamond.If pressure is very big, more than 20,000 atmospheric pressures, then diamond also can be pressed together, so just can obtain higher diamond volume ratio, as 85%, and copper liquid also can not stay pore after solidifying, and can reach three times of copper radiating rib by the hot transfer efficiency of the made heat radiator of this method.The present invention under 0.1GPa～8GPa, carries out to avoid when high pressure injects the existence of oxygen, so should heat under vacuum or inert atmosphere.If carry out infiltration, just then diamond does not have the problem of oxidation or carbonization but be forced in the stable region of diamond.Can form the element of carbonide with copper, as manganese cooperate can dissolved carbon element, form alloy as iron, nickel, under high pressure the direct molten not diamond of metal-coated membrane that oozes.
Embodiment four
The present invention system is combined into film with minute surface matrix method with diamond and the metal with high heat transfer coefficient and laminates, it comprise provide as shown in Figure 1 be the silicon crystal template 10 of minute surface: as shown in Figure 2, coating copper metal layer 11 on the silicon crystal template 10 that is minute surface; As shown in Figure 3, utilize etching mode to etch at copper metal layer 11 that length and width is about 50 μ m, thickness is the cage of 20 μ m, and make both decompose with long-pending ratio 99% hydrogen with the long-pending ratio 1% methane body of hot tungsten filament method heating, to form also cage shape framework 110; As shown in Figure 4, deposit in the cage of copper framework 110 with chemical vapour deposition technique and to separate out the diamond film 12 that combines with copper framework 110, the diamond film 12 of deposition forms coarse surface; As shown in Figure 5, diamond film 12 very approaches and easy warpage in copper framework 110 cages owing to be deposited on, therefore on the coarse surface of diamond film 12, establish substrate 14 with scolder 13 welderings of silver-bearing copper tin titanium, and in addition solid welding in 10-5 drags the vacuum of ear, substrate 14 is silicon, tungsten, carbonization silicon or silicon nitride plate; As shown in Figure 6, utilize the potassium hydroxide dissolving to remove silicon crystal template 10, because the bottom surface that diamond film 12 contacts with silicon crystal template 10 is a minute surface, therefore, remove silicon crystal template 10 and just can obtain the very level and smooth diamond film in bottom surface 12, and tungsten plate 14 makes no longer warpage of diamond film 12 whereby, and can be by not dropping out in the copper framework 110, and the thickness that just obtains is about the lamellar body that 100 μ m diamond film and metals are mixed.
Have following advantage by the made diamond of present embodiment and the thin slice of copper metal:
1, diamond does not need through grinding or polishing again, and its bottom surface forms level and smooth minute surface by the silicon crystal lamina membranacea, because diamond hardness maximum, therefore very difficult processing is so the present invention can save the diamond procedure of processing and save manufacturing cost.
2, the present invention can make large-area heat radiator, thus can make in a large number and unit cost very low, the usability that has on the industry is worth.
3, the coefficient of thermal expansion of silicon used in the present invention and tungsten plate is all approaching with diamond, therefore the interfacial stress of welding is little, do not have the problem of peeling off, add that diamond film has utilized the copper framework to be separated, therefore prepared heat radiator not only can have excellent heat-conducting effect, and can directly be welded on the semiconductor wafer; Because it can conduct electricity, thus can be formed directly in electrode, and can replace semi-conductive substrate, thereby can save the part and the cost of semi-conductor electricity sub-element.
Though heat radiator of the present invention is used for the heat radiation of LED or diode, it also can be applicable to the heat radiator of CPU (central processing unit), vibrating membrane, sensor and the microwave treatment generator etc. of surface acoustic wave filter (Surface Accoustic wave Filter), all can use the present invention as long as can use level and smooth diamond film.
In addition, chemical vapour deposition technique used in the present invention (Chemical Vapor Deposition, CVD) used for many years in industry member, its principle is that methane or other carbonaceous gas are at high temperature decomposed, simultaneously with excessive hydrogen atom, as catalyzer, the carbon that makes deposition come out is combined into diamond film as percent by volume about 99%.Wherein, the type of heating of above-mentioned gas has many kinds, includes resistance heated (HotFilament), microwave agitates (Micro wave Agitation) and direct-current arc (DC Arc) etc.
Claims (14)
1, a kind of electronic element radiating spare, it is characterized in that it be with have that metal that high heat passes coefficient mixes with diamond and high pressure-temperature down extruding combine the thin slice that the film of composition is made.
2, a kind of electronic element radiating spare is characterized in that it serves as reasons and have that high heat passes the metal of coefficient and the thin slice of the diamond film formation that combines with metal.
3, electronic element radiating spare according to claim 1 and 2 is characterized in that described metal with high heat biography coefficient is a copper.
4, electronic element radiating spare according to claim 1 and 2 is characterized in that described metal with high heat biography coefficient is an aluminium.
5, a kind of electronic element radiating spare method for making is characterized in that it is diamond and the metal with high heat transfer coefficient are combined into film and laminate.
6, electronic element radiating spare method for making according to claim 5 is characterized in that described diamond combines with sintering process with the metal system with high heat transfer coefficient, and it lies in heating under the high pressure, makes the binding of metal sintering one-tenth and diamond grains is included in interior structure.
7, electronic element radiating spare method for making according to claim 6 is characterized in that heating is that 0.2GPa～8GPa, temperature range be 900 ℃～1500 ℃ in conjunction with diamond with the pressure limit with metal of high heat transfer coefficient with sintering process under the described high pressure.
8, electronic element radiating spare method for making according to claim 5 is characterized in that described diamond combines with infiltration method with the metal system with high heat transfer coefficient, and it is that metal is at high temperature melted, and it is forced in the hole of diamond again.
9, electronic element radiating spare method for making according to claim 8, the temperature range that it is characterized in that described metallic infiltration are 900 ℃～1500 ℃.
10, electronic element radiating spare method for making according to claim 8, it is characterized in that described with infiltration method in conjunction with diamond with have the metal of high heat transfer coefficient before will plate other metals on the diamond earlier, and then molten metal poured into the metal coating that makes the moistening coating diamond of molten metal, and molten metal is sucked in the diamond hole of metal-plated membrane by capillary strength.
11, electronic element radiating spare method for making according to claim 5 is characterized in that described diamond combines with pressurization with the metal system with high heat transfer coefficient, and it is by high pressure copper liquid to be injected the diamond hole.
12, electronic element radiating spare method for making according to claim 11 is characterized in that the pressure limit of described molten metal injection diamond hole is 0.1GPa～8GPa.
13, electronic element radiating spare method for making according to claim 5 is characterized in that described diamond combines with minute surface matrix method with the metal system with high heat transfer coefficient, and it lies in and is coating metal level on the template of minute surface; Utilize etching mode to etch cage shape framework; Deposit in the cage of copper framework with chemical vapour deposition technique and to separate out diamond film, establish substrate in the diamond film weldering, and in addition solid welding; Dissolving is removed template to obtain the very level and smooth diamond film in bottom surface.
14, electronic element radiating spare method for making according to claim 13 is characterized in that described substrate is silicon, tungsten, carbonization silicon or silicon nitride plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03142946 CN1271710C (en) | 2003-06-11 | 2003-06-11 | Heat radiation unit for electronic component and production process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03142946 CN1271710C (en) | 2003-06-11 | 2003-06-11 | Heat radiation unit for electronic component and production process thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1567131A true CN1567131A (en) | 2005-01-19 |
| CN1271710C CN1271710C (en) | 2006-08-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03142946 Expired - Fee Related CN1271710C (en) | 2003-06-11 | 2003-06-11 | Heat radiation unit for electronic component and production process thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1271710C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7427807B2 (en) | 2005-02-18 | 2008-09-23 | Mitac Technology Corp. | Chip heat dissipation structure and manufacturing method |
| US7504148B2 (en) | 2005-03-03 | 2009-03-17 | Mitac Technology Corp | Printed circuit board structure and manufacturing method thereof |
-
2003
- 2003-06-11 CN CN 03142946 patent/CN1271710C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7427807B2 (en) | 2005-02-18 | 2008-09-23 | Mitac Technology Corp. | Chip heat dissipation structure and manufacturing method |
| US7504148B2 (en) | 2005-03-03 | 2009-03-17 | Mitac Technology Corp | Printed circuit board structure and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1271710C (en) | 2006-08-23 |
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