CN1556241A - Device for preparing thin film using heat plasma mist state gasification process - Google Patents
Device for preparing thin film using heat plasma mist state gasification process Download PDFInfo
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- CN1556241A CN1556241A CNA2004100258096A CN200410025809A CN1556241A CN 1556241 A CN1556241 A CN 1556241A CN A2004100258096 A CNA2004100258096 A CN A2004100258096A CN 200410025809 A CN200410025809 A CN 200410025809A CN 1556241 A CN1556241 A CN 1556241A
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Abstract
An equipment for preparing film by thermal plasma to gasify to atomized liquid is composed of gas supplying source, ultrasonic atomizer, plasma torch generator, and quartz tube deposition reaction chamber and its bidirectionally regulatable low-speed motor, thermocouple, temp controller and shielding copper net. The film-preparing steps include preparing the aqueous solution of source substance, ultrasonic atomizing, using the gas carrier to carry the atomized liquid in plasma, and depositing film.
Description
Technical field
The invention belongs to film deposition techniques, relate to a kind of film deposition apparatus, particularly a kind of device of thermal plasma mist attitude gasification preparation film.
Background technology
The method for preparing at present film is a lot, vacuum evaporation, sputter, laser flash distillation, molecular beam epitaxy, vapour deposition, sol-gel, spray pyrolysis and hydrothermal method etc. are arranged, wherein to prepare film deposition temperature low for mocvd method, the sedimentation rate height, the film of preparation is even, the multi-element multilayer composite films of growing, and can with the semiconductor technology compatibility, therefore be widely used for preparing ferroelectric membranc, super crystal lattice material.But because the used metallorganics source of mocvd method is the liquid or the gas of high vapour pressure, preparation and purification difficult, the kind of preparation is limited at present, has limited the development of MOCVD to a certain extent.Therefore, people are on the one hand at the selectable range of studying expansion source material, on the other hand at the gasification mode of seeking new source material.
According to the data-searching that the applicant carried out, find following pertinent literature.
[1]W.Siefiet.Thin?Solid?Films，1984，121：267-270.
[2]W.M.Sears，M.A.Gee.Mechanics?of?film?formation?during?the?spraypyrolysis?of?tin?oxide.Thin?Solid?Films，1988，165(1)：265-277.
[3]A.Koukitu，Y.Hasegawa，H.Seki，et?al.Preparation?of?Y-Ba-Cu-Osuperconducting?thin?films?by?the?mist?microwave?plasma?decompositionmethod.Jpn?J?Appl?Phy?Part?2，1989，28(7)：L1212-1213.
[4]N.Takahashi，A.Koukitu，H.Seki.Crystallinity?and?superconductingproperties?of?YBa
2Cu
3O
7-x?thin?films?on?NdGaO
3?substrate?prepared?by?mistmicrowave-plasma?CVD.J?Mater?Sci?Lett，1998，17(10)：877-879.
[5]H.B.Wang，G.Y.Meng，D.K.Peng.Aerosol?and?plasma?assisted?chemicalvapor?deposition?process?for?multi-component?oxide?La
0.8Sr
0.2MnO
3?thinfilm.Thin?Solid?Films，2000，368(2)：275-278.
[6]D.Z.Christansen，W.P.Uuruh.Synthesis?of?ceramic?powders?bynonthermal?microwave?plasma.Ceram?Trans，1991，28(21)：597-601.
[7]D.Vollath，K.E.Sickafus.Synthesis?of?ceramic?oxide?powders?bymicrowave?plasma?pyrolysis.J?Mater?Sci，1993，28：5943-5948.
[8]E.J.Cukauskas，S.W.Kirchoefer，W.Chang.Morphology?and?dielectricproperties?of?Ba
0.5Sr
0.5TiO
3?thin?films?on?annealed(100)MgO.J?CrystGrowth，2002，236(1-3)：239-247.
[9]J.M.Zeng，H.Wang，M.Wang，S.Shang，Z.Wang，C.L.?Lin.Preparationand?ferroelectric?properties?of?BaTiO
3?thin?films?by?atmospheric-pressuremetallorganic?chemical?vapor?deposition.Thin?Solid?Films?1998，322(1-2)：104-107.
[10]S.H.Basantakumar，H.N.K.Sarma.Electrical?properties?of?sol-gelprocessed?barium?titanate?films.Thin?Solid?Films，1998，330(2)：178-182.
Aspect the use that enlarges the source material, spray pyrolysis combines the advantage of liquid phase method and gas phase thin films technology to a certain extent, overcome the problem in MO source in the MOCVD technology, enlarged the range of choice of source material, but the quality of prepared film is difficult to and the comparing of MOCVD.The electronic temp of low-temperature plasma is than the high 1-2 of a gas temperature order of magnitude, gas temperature is near envrionment temperature, elementary reactions such as the decomposition that is not enough to provide film deposition process required, ionization, but because electronic temp is up to 10000K, air pressure is low, electron mean free path is long, have enough energy by collision make that gas molecule excites, decomposition and ionization, this thermodynamics non-equilibrium is suitable for thin film technique.For improving the quality of the prepared film of SP method, be subjected to the inspiration that low-temperature plasma strengthens vapour deposition, develop low-temperature plasma and strengthened spray pyrolysis.According to the difference of the producing method of plasma body, the type that plasma body strengthens spray pyrolysis mainly contains corona discharge spray pyrolysis and microwave discharge plasma spray pyrolysis.Because traditional spray pyrolysis sedimentation effect is low, the method that adopts corona discharge is charged and the control droplet deposits to substrate with droplet, has improved sedimentation effect
[1,2]People such as Sears
[2]Adopt the ultrasonic atomizatio technology that first body is atomized, with nitrogen as carrier gas, be added on the blade that is fixed on aerosol stream top by high-voltage 20-60kV, produce corona discharge plasma, make atomizing droplet charged, charged drop produces orientated deposition on the ground connection substrate, sedimentation effect is brought up to 80%.People such as Akinori adopt mist phase microwave plasma sedimentation (the Mist Microwave Plasma Decomposition Method) to prepare the YBCO superconducting thin film
[3,4]People such as Wang have prepared multi-component oxide La
0.8Sr
0.2MnO
3Film
[5]Microwave plasma is heated energy transformation by the concussion electromagnetic field to charged particle, the quality of efficiency of conversion and charged particle is inversely proportional to, with square being inversely proportional to of frequency.Therefore prepare in the process of film at the microwave plasma spray pyrolysis, the droplet quality is more much bigger than the quality of charged particle, so the energy that microwave energy is transferred on the droplet by collision is considerably less, is difficult to make source material grains gasification and ionization.Christiansen and Uuruh studies show that, because that the microwave that frequency reaches 2.45GHz is coupled to the power of small droplets is strong inadequately, therefore microwave is directly coupled on the salts solution droplet and can not achieves the goal
[6]Vollath and Sickafus have synthesized aluminum oxide and zirconia ceramics powder with the microwave plasma spray pyrolysis, and compare with pattern with the powder of flame pyrolysis preparation, find that in fact both do not have significant difference, the generting machanism of proof powder is basic identical, show that the plasma pyrolysis process of being carried out is a pure thermal process, the surface topography influence of plasma enhanced chemical reaction pair powder is very little
[7]In low-temperature plasma, because mass of the electron is too little, the source material only exists with the gas molecule form, could be by the electronic impact ionization, and very little to relatively large drop and the particulate impact effect effect that produces in the spray pyrolysis.Therefore, low-temperature plasma enhancing spray pyrolysis prepares the quality that film also obviously improves prepared film.
And aspect the research of source gasification substance mode, if the range of choice of source material is expanded to metal inorganic salt such as the nitrate or the muriate of solubility from metallorganics, because the gasification temperature of metal inorganic thing is higher usually, therefore the source material need be heated to higher temperature just can provide enough vapour pressures to be used for deposit film.The gasification mode that metal inorganic salt is commonly used has means such as elevated temperature heat gasification, laser gasification and thermal plasma gasification.Elevated temperature heat gasification adopts electric heating or flame to produce high temperature, makes material be heated to its boiling point and gasifies; Laser gasification utilizes the high-energy-density of laser, with gasification substance; And the thermal plasma gasification utilizes the high-energy of thermal plasma with gasification substance.Wherein the above two are fit to gasify when material is in static state, and the latter can carry out the successive gasification to material.
Summary of the invention
Prepare the source material problem that runs in the thin film technique for thoroughly solving MOCVD, enlarge the selectable range and the kind of source material, and on thin film preparation process in conjunction with the advantage of MOCVD technology, can with the industrial manufacture process compatibility.Therefore, the objective of the invention is to, a kind of device of thermal plasma mist attitude gasification preparation film is provided.
The technical solution that realizes the foregoing invention purpose is that a kind of device of thermal plasma mist attitude gasification preparation film is characterized in that this device comprises:
One gas supply source, gas supply source comprise argon gas and oxygen and gas transport pipeline, and being used for provides source of the gas to the quartzy torch pipe of ultrasonic atomizer and plasma torch generating unit;
One ultrasonic atomizer is used for first liquid solution is atomized into droplet, is transported to carrier gas in the plasma torch of radio-frequency induction;
One plasma body torch generating unit is as the plasma heating source; Comprise the quartzy torch pipe and the self-excited oscillation type radio-frequency induction power supply that are communicated with plasma torch, the coaxial ruhmkorff coil that is wound with water-cooled copper cash system is as discharge electrode on the quartzy torch pipe, and the radio-frequency induction power supply is connected with ruhmkorff coil;
One silica tube as the reactive deposition chamber of thin film deposition, silica tube vertically is placed on the quartz plate, and plasma torch is introduced from the bottom of silica tube; The upper end of silica tube is provided with a two-way adjustable slowspeed machine, but and drive the screw body of the upper and lower displacement related, the position of adjusting substrate holder in silica tube by adjustable slowspeed machine with substrate holder;
One substrate holder supports and is upside down in the sediment chamber with the substrate bar, and the substrate bar links to each other with screw body, and substrate is clamped on the substrate holder;
One thermopair and temperature controller, thermopair pass the substrate bar, place the back side of substrate holder, are used to measure the temperature of substrate holder;
One copper mesh shielding case shields plasma torch generating unit part with the external world;
The argon gas of gas supply source and oxygen are by the tensimeter on the pipeline and magnetic valve and under meter and ultrasonic atomizer connection; The torch pipe is communicated with the argon gas of ultrasonic atomizer and gas supply source respectively.Ruhmkorff coil is connected with the radio-frequency induction power supply, and feeds water coolant; The substrate support bar is connected with screw body, and thermopair places on the substrate support bar, closely is contacted with the back side of substrate holder; Crust of the device and shielding case are all used copper strip special ground connection.
Some other characteristics of the present invention are, described ultrasonic atomizer includes ultra-sonic generator, synthetic glass atomizing bottle and recirculating cooling water system, and the vibrational frequency of described ultra-sonic generator is 1.67MHz, and atomizing power is 40W.
Described radio-frequency power supply mode of oscillation is a self-excited type, and electron tube power is 7kW.
The quartzy torch pipe of described quartzy torch Guan Weisan root coaxial welding formula.
On the described silica based bar quartz bar is arranged, can fixed substrate.
Described thermopair is arranged on the centre of substrate bar, and substrate pole pair thermopair plays shielding and provide protection.
The motor that described screw mandrel adjustment structure is adopted is a slowspeed machine, but and rotating, regulate moving up and down of substrate bar.
Device of the present invention need not vaccum-pumping equipment, and the thin film deposition reaction is all carried out at normal pressure, need not follow-up thermal treatment.
When using this device, be configured to first liquid solution with suitable source material is water-soluble, adopt ultrasonic atomizatio that first body is atomized into drop, adopt thermal plasma gasification mode normal pressure deposit film, developed thermal plasma mist attitude gasification preparation thin film technique (MPE).This installs the water-soluble or diluted acid of spendable source material energy, and the element of required deposit film can be not limited in listed source material at compound or simple substance such as metal oxide, nitrate, muriate and the vitriol etc. of stabilized aqueous solution existence.
Description of drawings
Fig. 1 is the device synoptic diagram that MPE of the present invention prepares film
Fig. 2 is the ultrasonic atomizer synoptic diagram.
Embodiment
The present invention is described in further detail below in conjunction with drawings and Examples.
The thermal plasma mist attitude vapor deposition membrane unit that the present invention set up as shown in Figure 1, this system by gas supply, ultrasonic atomizatio, drop transport, plasma body takes place and thin film deposition etc. is partly formed.
Comprise:
One gas supply source, gas supply source comprise argon gas 1 and source of oxygen 2, transport pipeline, magnetic valve 3 and under meter 4, are used for providing source of the gas to ultrasonic atomizer 5 and plasma torch 6;
One ultrasonic atomizer 5 is used for the first body aqueous solution 7 is atomized into droplet 8, is transported in the radio-frequency induction thermal plasma torch 6 as carrier gas with argon gas and oxygen;
One plasma body torch generating unit is as the plasma heating source; Comprise the quartzy torch pipe 9 and the self-excited oscillation type radio-frequency induction power supply 11 that are communicated with plasma torch 6, the coaxial ruhmkorff coil 10 that is wound with water-cooled copper cash system is as discharge electrode on the quartzy torch pipe 9, and radio-frequency induction power supply 11 is connected with ruhmkorff coil 10;
One silica tube 12 as the reactive deposition chamber of thin film deposition, silica tube 12 vertically is placed on the quartz plate, and plasma torch 6 is introduced from the bottom of silica tube 12; The upper end of silica tube 12 is provided with a two-way adjustable slowspeed machine 13, but and drive the screw body 15 of the upper and lower displacement related, the position of adjusting substrate holder 14 in silica tube 12 by adjustable slowspeed machine 13 with substrate holder 14;
One substrate holder 14 supports and is upside down in the sediment chamber 12 with substrate bar 16, and substrate bar 16 links to each other with screw body 15, and substrate 17 is clamped on the substrate holder 14;
One thermopair 18 and temperature controller 19, thermopair 18 passes substrate bar 16, places the back side of substrate holder 14, is used to measure the temperature of substrate holder 14;
Part takes place with plasma torch and shields with the external world in one copper mesh shielding case 20;
The argon gas 1 of gas supply source and oxygen 2 are by the tensimeter on the pipeline and magnetic valve 3 and under meter 4 and a ultrasonic atomizer 5 connections; Torch pipe 9 is communicated with the argon gas 1 of ultrasonic atomizer 5 and gas supply source respectively.Ruhmkorff coil 10 is connected with radio-frequency induction power supply 11, and feeds water coolant.Substrate support bar 16 is connected with screw body 15, and thermopair 18 places substrate support bar 16, closely is contacted with the back side of substrate holder 14.Device housings and shielding case 20 are all used copper strip special ground connection.
Radio-frequency induction power supply 11, power supply is a self-excited oscillation type, mainly comprise an electron tube, LC oscillatory circuit, electrical power control cabinet, lighter for ignition, the air-cooled fan of electron tube and ruhmkorff coil water coolant, regulate the radio-frequency induction coupled power by regulating the wing voltage and current, change the parameter of plasma torch;
The principle of MPE deposit film is that the reaction source material is mixed with first liquid solution, adopt ultrasonic atomizatio that first body is atomized into droplet, be transported in the radio-frequency induction thermal plasma torch with the carrier gas droplet that will atomize, utilize the ultrahigh-temperature of high-temperature plasma, source material in the droplet thoroughly is decomposed into reactive behavior particles such as atom, molecule or ion, by vapor transportation, final reactive deposition on substrate, film former.
Use water-cooled copper coil on the three coaxial quartzy torch pipes as discharge electrode, discharge electrode is connected with radio-frequency power supply, by the radio-frequency induction coupling, the argon gas by quartzy torch pipe is discharged under normal pressure, argon gas " is lighted ", produced thermal plasma at the quartzy torch mouth of pipe.After thermal plasma took place, its outward appearance presented extremely bright flare shape, therefore was called plasma torch again.During work, logical respectively cooling argon gas of the outer tube of quartzy torch pipe and middle pipe and plasma body work argon gas, the gas mixture of interior effective argon gas and oxygen feeds atomizing droplet as carrier gas in plasma torch.
Adopt silica tube as the depositing of thin film reaction chamber.Silica tube vertically is placed on the quartz plate, and interface seals with husky groove, and the torch mouth of pipe is positioned at quartz plate central authorities.Plasma torch is incorporated into the sediment chamber from the bottom of silica tube, and substrate is inverted and is fixed on the silica based bar, and meet to plasma body in the front.One shielding thermopair by quartzy pedestal pole, is abutted against the back side of quartzy pedestal with the thermocouple temperature measurement point, measure the temperature of pedestal.Because substrate heats by plasma tail flame, the relative distance (D of substrate and plasma torch outlet
Sn) influencing substrate temperature, the present invention has designed the screw body that a slowspeed machine (60r/min) is regulated, can be in real time by regulating substrate position, the temperature of regulating substrate.
Because this plasma body generation systems is strong high frequency electromagnetic radiation source, harmful to communication and health of human body, must take effective electromagnetic radiation braking measure.System adopts triple shieldings, and wherein electron tube in the radio-frequency power supply and ruhmkorff coil adopt thick aluminium sheet case of 2mm and the shielding of brass guard respectively, and the power supply cabinet is the thick iron plate of 2mm, has has also designed and produced the copper mesh shielding case of aluminium alloy structure outside cabinet.All devices shell and shielding case all adopt copper strip special ground connection, and source of radiation is initiatively shielded, and reduce to leak a field intensity.For further reducing electromagnetic radiation to hazard to person, made copper mesh shielding clothing, human body is also shielded.
MPE prepares the aqueous solution of the first body employing inorganics of film.Elder generation's body adopts ultrasonic atomizatio, and ultrasonic atomizer 5 detailed structure that the present invention set up as shown in Figure 2.This device comprises ultra-sonic generator 5-1, atomizing bottle 5-2, recirculating cooling water system 5-3 and transports pipeline 5-4.Wherein the vibrational frequency of ultra-sonic generator 5-1 is 1.67MHz, and atomizing power is 40W.Atomizing bottle 5-2 diameter is 50mm, high 70mm, adopt specific acoustic impedance and the more approaching synthetic glass bottle of water, reduce because both specific acoustic impedances differ than losing in water and the ultrasonic reflections that the bottle bottom boundary takes place greatly, to allow most of ultrasonic energy transmission enter among the atomizing bottle 5-2, first liquid solution 5-8 atomizes.Adopt low flow pump 5-5 to make the cooling that constantly circulates of water among the atomizing pond 5-3, avoid owing to the rising of atomized water temperature influences atomization rates.The droplet 5-6 carrier gas 5-7 that is produced is transported in the quartzy torch pipe by polyethylene tube 5-4.Device need not vaccum-pumping equipment, and the thin film deposition reaction is all carried out at normal pressure, need not follow-up thermal treatment.
The significant parameter of this MPE film deposition apparatus is as follows:
1. radio-frequency power supply parameter
(1) type of oscillation: self-excited type;
(2) peak power: 7kW;
(3) oscillation frequency: 31 ± 4MHz;
(4) diameter of ruhmkorff coil and height: diameter 25mm, high 10mm;
(5) the induction number of turns: two circles;
(6) type of cooling: electron tube adopts air blast cooling; Working coil adopts water-cooled.
2. quartzy torch pipe parameter
(1) torch tubular construction type: the triple silica tubes of welded type
(2) outer tube diameter: 17mm;
(3) external diameter of pipe: 14mm in;
(4) nozzle inside diameter: 1.5mm;
(5) middle relatively pipe distance: the 1.5mm of nozzle hole; Plasma body lead-in mode: tangentially import.
3. each gas standard when working
(1) plasma gas flow (Ar): 17L/min;
(2) substreams amount (Ar): 0-3L/min;
(3) carrier gas flux (Ar): 0.5-0.8L/min, O
2: 0-0.25L/min;
(4) supply gas pressure: 0.2-0.3Mpa;
4. ultrasonic atomizer parameter
(1) atomizing type: ultrasonic atomizer (40W, 1.67MHz);
(2) maximum atomization quantity: 5ml/min;
(3) atomizing medium: recirculated cooling water
Apparatus of the present invention are first body with the metal nitrate or the muriatic aqueous solution, adopt ultrasonic atomizatio, are 560 ℃ of-730 ℃ of normal pressures deposition 20min-40min at substrate temperature, have prepared multiple sull.By with close substrate temperature under the sedimentary TiO of MOCVD
2Film morphology is compared, and finds the TiO that adopts the MPE method to be equipped with nitrate elder generation system
2The TiO of the quality of forming film of film and MOCVD preparation
2Film is very approaching.Adopt result's (seeing example) of other film of the present invention's preparation also to show, the present invention when enlarging the optional scope of source material, the smooth densification of prepared film, film performance even be better than the performance of the prepared film of some common preparation methods.Therefore, the present invention has thoroughly solved the source material problem in the film preparation process, expand available source material inorganics such as metal oxide, nitrate and the muriate of solubility to, can adopt the aqueous solution of inorganic matter normal atmosphere vapor deposition to prepare film, the kind that can prepare film is very extensive; The film preparation cost is low, adopts the normal pressure deposition, need not vaccum-pumping equipment; Its sedimentation rate height, one-pass film-forming need not repeatedly to apply or subsequent heat treatment, and the film preparation cycle is short; And can online large-area film deposition, possess the incomparable advantage of other film preparing technology.
Below be the contriver provide by the specific embodiment that device of the present invention carried out, it is pointed out that to the invention is not restricted to these embodiment.
Embodiment one:
Adopt the MPE technology at substrate apart from be 10cm-16cm, substrate temperature is under 730 ℃-620 ℃ the condition, is first body with the aqueous chloride solution of 0.05M titanium, normal pressure deposits 20min-40min and has prepared rutile TiO on Si (111) substrate
2Film.Adopting the MOCVD technology, is the MO source with the tetrabutyl titanate, and substrate temperature is 600 ℃-700 ℃, has prepared Detitanium-ore-type TiO on Si (111) substrate
2Film.By with MPE and two kinds of prepared TiO of preparation method of MOCVD
2Film is made comparisons, and finds and under the higher deposition temperature that is close, the pattern difference of two kinds of prepared films of method is little, and the MOCVD sedimentation rate is far below MPE.
Embodiment two:
With the nickelous nitrate of 0.2M and the aqueous solution elder generation body of lanthanum nitrate, adopting the MPE technology is that 630 ℃ of deposition 20min-40min have prepared LaNiO at substrate temperature
3Film, prepared film light slips close, prepared LaNiO
3The resistivity of film can reach 0.77m Ω cm.
Embodiment three:
Muriate and nitrate aqueous solution with Ba and Ti is first body respectively, adopts the MPE technology at Si, SiO
2Prepared BaTiO on the substrates such as/Si, MgO/Si, Pt/Ti/Si and LNO/Si
3(BT) film.The BT film for preparing on MgO (111)/Si (111) substrate presents (111) preferred orientation; Be reduced to 600 ℃ with substrate temperature by 730 ℃, film only changes the cubic perovskite structure that (001) diffraction peak appears into gradually by the cubic perovskite structure that (001) and (100) peak all appears.Adopt the LNO bottom electrode to promote the crystalline growth of BT film; Prepared BT film densification on the MgO buffer layer, even particle size is better than at SiO
2The BT film surface quality of the last preparation of/Si.
Adopt the specific inductivity of the specific inductivity of the prepared BT/Pt film of the present invention greater than the BT film of the employing MOCVD preparation of report
[8,9], the coercive field of film is 10kV/cm by force, the coercive field of BT film that is lower than the employing sol-gel preparation of report is worth 53kV/cm by force
[10]
Claims (7)
1. the device of thermal plasma mist attitude gasification preparation film is characterized in that this device comprises:
One gas supply source, gas supply source comprise argon gas [1] and oxygen [2] and gas transport pipeline, and being used for provides source of the gas to the quartzy torch pipe [9] of ultrasonic atomizer [5] and plasma torch generating unit [6];
One ultrasonic atomizer [5] is used for first liquid solution is atomized into droplet, is transported to carrier gas in the plasma torch [6] of radio-frequency induction;
One plasma body torch generating unit is as the plasma heating source; Comprise the quartzy torch pipe [9] and the self-excited oscillation type radio-frequency induction power supply [11] that are communicated with plasma torch [6], quartzy torch pipe [9] is gone up the coaxial ruhmkorff coil [10] that is wound with water-cooled copper cash system as discharge electrode, and radio-frequency induction power supply [11] is connected with ruhmkorff coil [10];
One silica tube [12] as the reactive deposition chamber of thin film deposition, silica tube [12] vertically is placed on the quartz plate, and plasma torch [6] is introduced from the bottom of silica tube [12]; The upper end of silica tube [12] is provided with a two-way adjustable slowspeed machine [13], and is driven with substrate holder [14] but the screw body [15] of related upper and lower displacement the position of adjusting substrate holder [14] in silica tube [12] by adjustable slowspeed machine [13];
One substrate holder [14] supports and is upside down in the sediment chamber [12] with substrate bar [16], and substrate bar [16] links to each other with screw body [15], and substrate [17] is clamped on the substrate holder [14];
One thermopair [18] and temperature controller [19], thermopair [18] passes substrate bar [16], places the back side of substrate holder [14], is used to measure the temperature of substrate holder [14];
One copper mesh shielding case [20] shields plasma torch generating unit part with the external world;
Argon gas of gas supply source [1] and oxygen [2] are by the tensimeter on the pipeline and magnetic valve [3] and under meter [4] and a ultrasonic atomizer [5] connection; Torch pipe [9] is communicated with the argon gas [1] of ultrasonic atomizer [5] and gas supply source respectively.Ruhmkorff coil [10] is connected with radio-frequency induction power supply [11], and feeds water coolant; Substrate support bar [16] is connected with screw body [15], and thermopair [18] places substrate support bar [16], closely is contacted with the back side of substrate holder [14]; Crust of the device and shielding case [20] are all used copper strip special ground connection.
2. the device of thermal plasma mist attitude gasification preparation film as claimed in claim 1, it is characterized in that, described ultrasonic atomizer [5] includes ultra-sonic generator, synthetic glass atomizing bottle and recirculating cooling water system, the vibrational frequency of described ultra-sonic generator is 1.67MHz, and atomizing power is 40W.
3. the device of thermal plasma mist attitude gasification preparation film as claimed in claim 1 is characterized in that described radio-frequency power supply [11] mode of oscillation is a self-excited type, and electron tube power is 7kW.
4. the device of thermal plasma mist attitude gasification preparation film as claimed in claim 1 is characterized in that, described quartzy torch pipe [9] is the quartzy torch pipes of three coaxial welding formulas.
5. the device of thermal plasma mist attitude gasification preparation film as claimed in claim 1 is characterized in that on the described silica based bar [14] quartz bar being arranged, can fixed substrate.
6. the device of thermal plasma mist attitude gasification preparation film as claimed in claim 1 is characterized in that described thermopair [18] is arranged on the centre of substrate bar [16], and substrate bar [16] plays shielding and provide protection to thermopair [18].
7. the device of thermal plasma mist attitude as claimed in claim 1 gasification preparation film is characterized in that the motor [7] that described screw mandrel adjustment structure [15] is adopted be a slowspeed machine, but and rotating, the moving up and down of adjusting substrate bar [16].
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2004
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100462476C (en) * | 2005-07-14 | 2009-02-18 | 中国科学技术大学 | Production of multifunctional gas-phase depositer and solid oxide fuel single cell |
| US8075734B2 (en) | 2007-07-06 | 2011-12-13 | Applied Materials, Inc. | Remote inductively coupled plasma source for CVD chamber cleaning |
| CN102168257A (en) * | 2010-02-26 | 2011-08-31 | 鸿富锦精密工业（深圳）有限公司 | Filming device |
| CN102528057A (en) * | 2010-12-24 | 2012-07-04 | 日立金属株式会社 | Method for manufacturing metal microspheres |
| CN102528057B (en) * | 2010-12-24 | 2016-12-14 | 日立金属株式会社 | The manufacture method of metallic microspheres |
| CN107630203A (en) * | 2017-09-22 | 2018-01-26 | 长安大学 | A kind of method of normal pressure cold plasma deposited metal simple substance membrane |
| CN107630203B (en) * | 2017-09-22 | 2019-11-29 | 长安大学 | A kind of method of normal pressure cold plasma deposited metal simple substance membrane |
| CN109554656A (en) * | 2018-12-13 | 2019-04-02 | 西安交通大学 | The preparation method and system of ceramic of compact coating under a kind of room temperature atmospheric atmosphere |
| WO2024060293A1 (en) * | 2022-09-20 | 2024-03-28 | 湖南千山制药机械股份有限公司 | Vacuum outer plating module and integrated forming machine for plastic ampoule |
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