CN1555090A - Method for producing integrated circuit sample section using laser - Google Patents
Method for producing integrated circuit sample section using laser Download PDFInfo
- Publication number
- CN1555090A CN1555090A CNA2003101228981A CN200310122898A CN1555090A CN 1555090 A CN1555090 A CN 1555090A CN A2003101228981 A CNA2003101228981 A CN A2003101228981A CN 200310122898 A CN200310122898 A CN 200310122898A CN 1555090 A CN1555090 A CN 1555090A
- Authority
- CN
- China
- Prior art keywords
- laser
- sample
- integrated circuit
- high energy
- silicon chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Sampling And Sample Adjustment (AREA)
Abstract
This invention provides a method for processing IC sample sections utilizing laser. A high energy focused laser beam is project onto a silicon plate to heat the micro-region quickly for altering its mechanical performance and to match with the mechanical force applied onto the sample at the same time to generated cracks on the sample accurately to be cracked in terms of the predetermined direction so as to get required sections swiftly and accurately.
Description
Technical field
The invention belongs to the technical field of analysis and detection in the integrated circuit fabrication process, be specifically related to a kind of method of using laser to make the integrated circuit sample section.
Background technology
Along with the continuous development of integrated circuit, transistorized minimum feature is constantly dwindled, and the length of transistor gate is near 0.1 micron in the advanced CMOS technology.Constantly dwindling of characteristic line breadth caused increasing substantially of chip integration, but tiny lines have brought very big difficulty to industrial analysis.
Fractograph analysis is the important analysis means of exploitation and monitoring ic production technology, it cuts off silicon chip by the zone of analyzing at needs along the silicon wafer thickness direction, then the section sample is taken the profile scanning electron microscope and transfer big observation, the problem in the analysis process or the reason of component failure are the indispensable analysis means of integrated circuit industry.
The method of the most frequently used making section is a manual method: finds position to be analyzed with naked eyes, near position to be cut, marks crackle with diamant, and manual afterburning then, make sample along crack initiation, obtain the sample of institute's palpus.This method is quick, simple, but significant limitation is also arranged.In order to make naked eyes find the position, zone to be analyzed is quite long, several millimeters ability to recognize easily; And manual sum of errors uncertainty of drawing crackle requires regional long enough to be analyzed (more than 5 millimeters) to guarantee in the disconnection of the position of needs too.So, usually in design, will arrange special bulk zone to place specially designed section lines specially to make things convenient for the making of section sample in order to carry out fractograph analysis.Along with dwindling of integrated circuit size, lines increase greatly in the unit are, and special section district becomes more and more uneconomical, has wasted valuable chip area.
In order to improve the uncertainty of manual scribing, developed the method for mechanical scribing, it is afterburning to obtain crackle and to make the sample cracking on diamant with machinery, has avoided hand scribing and afterburning non-repeatability.This technology also can accurately be cut off the lines of 1 millimeter, thereby has reduced the area in section district, has improved the utilance of analysis ability and chip area.But be subjected to the restriction of mechanical dimension, this method can't be cut off the lines of littler length, and 1 millimeter line length is still too big for the most lines that use in the integrated circuit, still can not satisfy most of actual conditions, needs specialized designs section zone to make things convenient for the making of section.Though improve to some extent, still be apparent not enough than manual method.
Can make the section district especially at present, and the analysis tool that can carry out fractograph analysis to any micro-structure is focused ion beam microscope (FIB).It utilizes the high energy ion beam bombardment sample surfaces that focuses on through electromagnetic lens, the atom sputtering of sample is come out, by long-time sputter, dig out the groove at certain depth and certain inclination angle in the appointed area that needs are observed with ion beam, and then carry out oblique view.This method does not have special requirement to viewing area, can observe minimum integrated circuit structure (several microns of zero points), is very accurate analysis tool.But this method needs special equipment, also needs high vacuum condition, and equipment cost and operating cost are all very high.And because of ion beam spot is little, the Production Time of sample is very long, and a general sample just needs preparation in several hours.The atom that sputters in addition may may cause the contamination of sample in the deposit of undesirable position.
Summary of the invention
The objective of the invention is to propose a kind of method, can be lower than cost and the time of FIB, make integrated circuit electron microscope section sample to be higher than the accuracy of craft and mechanical means.
The method of the making integrated circuit sample section that the present invention proposes, be to project on the silicon chip after the high energy laser beam line focus, by tiny area is carried out Fast Heating, change this regional mechanical performance, cooperatively interact with the mechanical force that is added in simultaneously on the sample, on sample, crack exactly and sample is ftractureed by predetermined direction, thereby obtain needed section quickly and accurately.
Accompanying drawing 1 has been represented a kind of implementation of the system that constitutes by thinking of the present invention in the mode of block diagram, wherein launch high intensity laser pulse by the high-energy laser of cooling system cooling, after light path control and focusing system, shine on the silicon chip, silicon chip is clamped on sample stage, thermal stress cracks in the area to be illuminated territory after being subjected to high light radiation, after this moment sample being added mechanical force, sample will obtain final section along predetermined crack initiation.
In order to produce required superlaser, can use various lasers: promptly can use solid state laser such as ruby laser, neodymium glass laser, NdYAG laser, semiconductor laser etc., also can use gas laser such as CO with enough power output
2Laser, CO laser, excimer laser etc.
The characteristic parameter scope of selected high-energy laser is: optical maser wavelength 0.2um is to 50um, and pulsed laser energy 0.5J is to 200J, and laser pulse frequency 1Hz is to 10KHz, and laser power is that 10W is to 10KW.
The laser pulse that high-energy laser sends must focus on to obtain as far as possible little hot spot, and focusing system can adopt the transmission-type type of focusing or the reflective type of focusing.The characteristic parameter scope that focuses on focal length is 10 millimeters to 500 millimeters, and the focused beam spot diameter is in 0.001 millimeter to 0.1 millimeter scope.
Silicon chip back also can be heated in the front that focal beam spot both can heat silicon chip to the heating of silicon chip.Make the exposure surface produce enough heats and produce thermal stress.
For the direction of check that obtains determining, must move along specific direction.As shown in Figure 2, this both can be to resemble among the left figure plane, silicon chip place 2 to move along 3 two orthogonal directions, also can be that high energy laser beam 1 moves along 3 direction resembling among the right figure.Therefore, promptly can be to move in plane, silicon chip place, also can be high energy laser beam moves.
Sample will apply mechanical force to sample and makes this sample whole along crack fracture after laser radiation has produced the directed crackle that thermal stress causes.For making sample breakage can use tensile, compressive, bending, afterburning mode such as turning round.Schematically illustrate among Fig. 3 to specimen holder 4 apply direction 5 moment so that sample 2 rupture.
This method sample preparation time and craft and mechanical system are suitable, and precision improves greatly, are low, the integrated circuit section sample preparation methods accurately and efficiently of a kind of cost.
Description of drawings
Fig. 1 is the system block diagram of laser sample-preparing system.
Fig. 2 is the comparison of two kinds of possibility motion modes.
Fig. 3 is a kind of possible diagram that applies mechanical force.
Number in the figure is respectively: the 1st, focusing system and light beam, 2 are the sample that is held, 3 is two mutually perpendicular directions of motion, 4 is specimen holder, the 5th, specimen holder be subjected to force direction.
Embodiment
Following example illustrates a kind of possible implementation process of the present invention, its objective is and explains utilization of the present invention better, and not should be understood to limitation of the present invention.
1. regulate high-energy laser and focusing system, make output facula reach instructions for use;
With specimen holder on the specimen holder of silicon chip platform, and position to be cut moved under the laser beam;
3. strengthen laser output energy with the zonule on the heating silicon chip, sample clamping system reinforcing simultaneously, can select solid state laser such as ruby laser for use, the pulsed laser energy 100J left and right sides is adjustable, the laser pulse frequency 1KHz left and right sides is adjustable, the laser power 1KW left and right sides is adjustable;
4. stop laser output after the sample breakage, take out sample and carry out the section electron microscope observation.
Claims (5)
1, a kind of method of making the integrated circuit sample section, it is characterized in that, to project on the silicon chip after the high energy laser beam line focus, by tiny area is heated, cooperatively interact with the mechanical force that is added in simultaneously on the sample, on sample, crack exactly and sample is ftractureed by predetermined direction, thereby obtain needed section quickly and accurately.
2, method according to claim 1 is characterized in that above-mentioned high energy laser beam wavelength is 0.2um-50um, and pulse energy is 0.5J-200J, and pulse frequency is 1Hz-10KHz, and laser power is 10W-10KW.
3,, it is characterized in that above-mentioned superlaser can use solid state laser according to claim 1,2 described methods: ruby laser, neodymium glass laser, NdYAG laser, semiconductor laser, or use gas laser: CO
2Laser, CO laser, excimer laser.
4,, it is characterized in that above-mentioned high-energy laser adopts transmission-type to focus on or the reflective type of focusing, focuses on 10 millimeters to 500 millimeters of focal lengths, 0.001 millimeter to 0.1 millimeter of focused beam spot diameter according to claim 1,2 described methods.
5, method according to claim 1 is characterized in that, direction of check as required moves plane, silicon chip place, and high energy laser beam is moved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2003101228981A CN100389485C (en) | 2003-12-27 | 2003-12-27 | Method for producing integrated circuit sample section using laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2003101228981A CN100389485C (en) | 2003-12-27 | 2003-12-27 | Method for producing integrated circuit sample section using laser |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1555090A true CN1555090A (en) | 2004-12-15 |
CN100389485C CN100389485C (en) | 2008-05-21 |
Family
ID=34338818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003101228981A Expired - Fee Related CN100389485C (en) | 2003-12-27 | 2003-12-27 | Method for producing integrated circuit sample section using laser |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100389485C (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022033158A1 (en) * | 2020-08-14 | 2022-02-17 | 长鑫存储技术有限公司 | Wafer level failure analysis sample production method |
US11835492B2 (en) | 2020-08-14 | 2023-12-05 | Changxin Memory Technologies, Inc. | Method for preparing sample for wafer level failure analysis |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6413839B1 (en) * | 1998-10-23 | 2002-07-02 | Emcore Corporation | Semiconductor device separation using a patterned laser projection |
DE19952331C1 (en) * | 1999-10-29 | 2001-08-30 | Schott Spezialglas Gmbh | Method and device for quickly cutting a workpiece from brittle material using laser beams |
JP4886937B2 (en) * | 2001-05-17 | 2012-02-29 | リンテック株式会社 | Dicing sheet and dicing method |
KR100700997B1 (en) * | 2001-06-21 | 2007-03-28 | 삼성전자주식회사 | Method for cutting multiple substrate and apparatus for cutting multiple substrate |
SG139508A1 (en) * | 2001-09-10 | 2008-02-29 | Micron Technology Inc | Wafer dicing device and method |
-
2003
- 2003-12-27 CN CNB2003101228981A patent/CN100389485C/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022033158A1 (en) * | 2020-08-14 | 2022-02-17 | 长鑫存储技术有限公司 | Wafer level failure analysis sample production method |
CN114076697A (en) * | 2020-08-14 | 2022-02-22 | 长鑫存储技术有限公司 | Preparation method of semiconductor failure analysis sample |
US11835492B2 (en) | 2020-08-14 | 2023-12-05 | Changxin Memory Technologies, Inc. | Method for preparing sample for wafer level failure analysis |
Also Published As
Publication number | Publication date |
---|---|
CN100389485C (en) | 2008-05-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20240261893A1 (en) | Method for laser processing a transparent material | |
CN104972226A (en) | Double-head laser machining device and machining method | |
KR20140142372A (en) | Cutting method, cutting method for workpiece, and cutting method for optically transparent material | |
JP2008080346A (en) | Laser beam machining device and laser beam machining method | |
CN102470482A (en) | Laser scribe processing method | |
JP2004528991A5 (en) | ||
EP2787338B1 (en) | Method and arrangement for manufacturing a sample for microstructural materials diagnostics and corresponding sample | |
CN113199143A (en) | Double-light-path ultrafast laser welding device based on beam shaping and processing method | |
WO2012063348A1 (en) | Laser processing method and device | |
JP2007260749A (en) | Laser beam machining method and apparatus, and machined product of brittle material | |
Mishchik et al. | Ultrashort pulse laser cutting of glass by controlled fracture propagation | |
CN100389485C (en) | Method for producing integrated circuit sample section using laser | |
JPH10244386A (en) | Device and method of laser beam machining for transparent hard brittle material | |
CN115178892A (en) | High-quality cutting method for millimeter-thickness quartz glass | |
Segall et al. | Fracture control of unsupported ceramics during laser machining using a simultaneous prescore | |
KR20110137032A (en) | Substrate dicing method by nonlinear focal shift using femtosecond pulse lasers | |
KR100862522B1 (en) | Laser beam machining system and method for cutting of substrate using the same | |
EP3085487B1 (en) | Brittle object cutting apparatus and cutting method thereof | |
JP2003071828A (en) | Laser micro-slitting device and its method | |
CN1268467C (en) | Technique for making miniature channel on quartz substrate by laser-induced plasma process | |
CN1798631A (en) | Method for separating flat ceramic workpieces with a calculated radiation spot length | |
US11420894B2 (en) | Brittle object cutting apparatus and cutting method thereof | |
CN216882262U (en) | Laser etching device for coating | |
CN116329781A (en) | Brittle material natural cracking device and method thereof | |
Li et al. | A Study on the Effect of Process Parameters on Thin NAND Flash Wafer by Multi-Beam Matrix Laser Cutting |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080521 Termination date: 20151227 |
|
EXPY | Termination of patent right or utility model |