CN1554800A - Preparing carbon-germanium alloy film by low pressure reaction ion coating - Google Patents
Preparing carbon-germanium alloy film by low pressure reaction ion coating Download PDFInfo
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- CN1554800A CN1554800A CNA2003101159623A CN200310115962A CN1554800A CN 1554800 A CN1554800 A CN 1554800A CN A2003101159623 A CNA2003101159623 A CN A2003101159623A CN 200310115962 A CN200310115962 A CN 200310115962A CN 1554800 A CN1554800 A CN 1554800A
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- germanium
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- germanium alloy
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Abstract
The present invention relates to low pressure reaction ion plating process of preparing carbon-germanium alloy (GexCc-x) film. High purity germanium is evaporated while argon is introduced as work gas as ion source to provide plasma for coating film, and carbon containing gas as reaction gas is introduced into the vacuum chamber and ionized and decomposed under the argon plasma, so that the evaporated germanium and carbon take place reaction and form carbon-germanium alloy (GexCc-x) film on the substrate. The said process can obtain GexCc-x film with refractivity varying in relatively wide range and low absorption at middle infrared waveband and long infrared waveband.
Description
Technical field: the present invention is that the low-voltage ion reactive plating method prepares carbon germanium alloy (Ge
xC
1-x) film, belong to technical field of vacuum plating, be applicable to material of infrared windows such as zinc sulphide, zinc selenide, germanium are done anti-reflection protective film.
Background technology: the optical window material that middle LONG WAVE INFRARED is used, such as ZnS, ZnSe and Ge, its physical strength is low, fragility is big, be difficult to resist various damages, and because the specific refractory power of these materials is higher, need the plating anti-reflection film to use, and common middle LONG WAVE INFRARED thin-film material hardness is lower, is difficult to bear rugged environment.Ge
xC
1-xBe that a kind of hardness is suitable, the infrared preferably optical coating of using of anti-weathering.Ge
xC
1-xPerformance index such as specific refractory power, uptake factor, internal stress, hardness, can in the scope of broad, change according to the difference of component x, be suitable for the assembly of thin films design.
Preparation carbon germanium alloy (Ge
xC
1-x) main method of film has:
1) reactive sputtering.With Ar and hydrocarbon polymer mixed gas, sputter Ge target or Ge, C hybrid target, this method is suitable for the Ge of high Ge/C ratio
xC
1-xCoating.Thereby shortcoming is the easily sputter of growth amorphous carbon-film inhibition Ge on the Ge target.
2) plasma chemical vapor deposition.Produce glow discharge with germane and hydrocarbon polymer mixed gas, on negative electrode, obtain amorphous ge
xC
1-x, its composition is controlled by the ratio of germane and hydrocarbon polymer.Shortcoming is that germane costs an arm and a leg, and is dangerous big, and the Ge that makes with this method
xC
1-xFilm has bigger photoabsorption.
Summary of the invention:
The objective of the invention is in order to overcome the shortcoming of aforesaid method, provide the low-voltage ion reactive plating method to prepare carbon germanium alloy (Ge
xC
1-x) film, ultimate principle of the present invention:
Technical scheme of the present invention: the germanium wafer of selecting twin polishing places the top of vacuum chamber as substrate; Evaporating materials is a HpGe, and evaporation mode is an electron beam evaporation; Argon gas is introduced ion source as working gas, and gas forms plasma body in the ion source internal ionization, produces arc discharge between the suspension crucible of ion source and electron beam gun, and plasma body is pulled out in ion source; Feed vacuum chamber with carbonaceous gas as reactant gases, under the effect of argon plasma, carbonaceous gas is decomposited a large amount of carbonium ions by fully ionization; As evaporating materials, the germanium atom that evaporates reacts deposit carbon germanium alloy (Ge in substrate with the carbonium ion that has higher-energy with HpGe
xC
1-x) film.By the adjustments of gas flow (methane is 2～30sccm, argon gas be 5～50sccm) and the vaporator rate of germanium (0.1～1.0nm/s), can obtain the different Ge of component x
xC
1-xFilm.
Beneficial effect of the present invention: the low-voltage ion reactive plating method that is adopted neither needs to use germane to cost an arm and a leg like this and dangerous gas, can solve " target poisoning " phenomenon in the sputtering method again, be suitable for being coated with of thick film, and can obtain the Ge of specific refractory power adjustable extent broad
xC
1-xFilm.Simultaneously since the operating air pressure of this method 10
-2Pa, than low 2～5 orders of magnitude of the operating air pressure of sputter and chemical gaseous phase depositing process, therefore, the Ge that makes with this method
xC
1-xFilm has littler roughness; Rete is thicker; Evenly firmly.
Embodiment:
Embodiment 1: the germanium wafer of selecting twin polishing places the top of vacuum chamber as substrate, and evaporating materials is a HpGe, and evaporation mode is an electron beam evaporation, and ion source is the DDY-120/60 plasma source.When vacuum tightness is evacuated to 1.0 * 10
-3During Pa, feed argon gas in ion source, flow is 30sccm, regulate ionogenic focusing current, arc source voltage, heater current etc. make argon gas ionization and and the electron beam gun crucible between produce arc discharge, regulate the ion source working parameter and make plasma electric flow valuve maximum.Feed methane near the electron beam gun crucible, flow is 10sccm, and inflation final vacuum degree is 7.0 * 10
-2Pa.The vaporator rate of control germanium is 0.1nm/s.The germanium atom that evaporates is ionized under the bump of positive ion and electronics, and wherein a part reacts deposit carbon germanium alloy (Ge in substrate with carbon ion
xC
1-x) film.
Embodiment 2: the germanium wafer of selecting twin polishing places the top of vacuum chamber as substrate, and evaporating materials is a HpGe, and evaporation mode is an electron beam evaporation, and ion source is the DDY-120/60 plasma source.When vacuum tightness is evacuated to 1.0 * 10
-3During Pa, feed argon gas in ion source, flow is 45sccm, regulate ionogenic focusing current, arc source voltage, heater current etc. make argon gas ionization and and the electron beam gun crucible between produce arc discharge, regulate the ion source working parameter and make plasma electric flow valuve maximum.Feed methane near the electron beam gun crucible, flow is 20sccm, and inflation final vacuum degree is 8.3 * 10
-2Pa.The vaporator rate of control germanium is 0.3nm/s.The germanium atom that evaporates is ionized under the bump of positive ion and electronics, and wherein a part reacts deposit carbon germanium alloy (Ge in substrate with carbon ion
xC
1-x) film.
Claims (2)
1, the low-voltage ion reactive plating method prepares carbon germanium alloy (Ge
xC
1-x) film, workpiece is put the vacuum chamber top, evaporation mode is an electron beam evaporation, it is characterized in that:
The germanium wafer of a, selection twin polishing is as substrate;
B, argon gas is introduced ion source as working gas, gas forms plasma body in the ion source internal ionization;
C, between the suspension crucible of ion source and electron beam gun, produce arc discharge, plasma body is pulled out in ion source;
D, feed vacuum chamber as reactant gases with carbonaceous gas, argon plasma used down, carbonaceous gas is decomposited a large amount of carbonium ions by fully ionization;
E, with HpGe as evaporating materials, the germanium atom that evaporates reacts deposit carbon germanium alloy (Ge in substrate with the carbonium ion that has a higher-energy
xC
1-x) film;
F, by the vaporator rate of adjustments of gas flow and germanium, can obtain the different Ge of component x
xC
1-xFilm.
2, prepare carbon germanium alloy (Ge according to the described low-voltage ion reactive plating method of claim 1
xC
1-x) film, the regulation range that it is characterized in that gas flow methane is 2～30sccm, and the regulation range of argon gas is 5～50sccm, and the vaporator rate of germanium is 0.1～1.0nm/s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2003101159623A CN1554800A (en) | 2003-12-19 | 2003-12-19 | Preparing carbon-germanium alloy film by low pressure reaction ion coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2003101159623A CN1554800A (en) | 2003-12-19 | 2003-12-19 | Preparing carbon-germanium alloy film by low pressure reaction ion coating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1554800A true CN1554800A (en) | 2004-12-15 |
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| CNA2003101159623A Pending CN1554800A (en) | 2003-12-19 | 2003-12-19 | Preparing carbon-germanium alloy film by low pressure reaction ion coating |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102092679A (en) * | 2011-01-06 | 2011-06-15 | 上海大学 | Method for manufacturing (0, 1, 2 and non-integer)-dimension germanium nanometer controllable structures |
| CN106498351A (en) * | 2016-11-03 | 2017-03-15 | 天津津航技术物理研究所 | A kind of method for improving ion beam reactive sputtering method preparation carbonization germanium film firmness |
-
2003
- 2003-12-19 CN CNA2003101159623A patent/CN1554800A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102092679A (en) * | 2011-01-06 | 2011-06-15 | 上海大学 | Method for manufacturing (0, 1, 2 and non-integer)-dimension germanium nanometer controllable structures |
| CN106498351A (en) * | 2016-11-03 | 2017-03-15 | 天津津航技术物理研究所 | A kind of method for improving ion beam reactive sputtering method preparation carbonization germanium film firmness |
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