CN1553477A - Laser crystallization system and method for controlling quasi-molecular laser annealing energy density - Google Patents
Laser crystallization system and method for controlling quasi-molecular laser annealing energy density Download PDFInfo
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- CN1553477A CN1553477A CNA2004100493293A CN200410049329A CN1553477A CN 1553477 A CN1553477 A CN 1553477A CN A2004100493293 A CNA2004100493293 A CN A2004100493293A CN 200410049329 A CN200410049329 A CN 200410049329A CN 1553477 A CN1553477 A CN 1553477A
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Abstract
Laser crystallizing system includes a quasi molecule laser annealing device and an optical detection device. Energy density method for controlling annealing procedure of quasi molecule laser in real time includes a procedure of determining optimal energy density and an annealing procedure of quasi molecule laser. The former procedure decides optimal energy density, and the latter carries out an annealing procedure of quasi molecule laser by using optimal energy density decided.
Description
Technical field
The present invention relates to the method for a kind of laser crystallization system and a kind of quasi-molecule laser annealing, particularly relate to the method for the energy density of a kind of laser crystallization system with optical detection and laser energy density calibration function and a kind of real-time control quasi-molecule laser annealing processing procedure.
Background technology
Characteristics such as LCD has that external form is frivolous, power consumption is few, resolution is good, radiationless and anti-electromagnetic interference are so be widely used on the Internet appliance products such as mobile phone, PDA(Personal Digital Assistant), mobile computer, flat-panel screens.Yet along with the lifting of user for the requirement of display visual experience, add that the new technology application constantly expands, so more the LCD of high image quality, high-resolution and tool low price becomes the trend of following Display Technique development, also brought up the motive power of new Display Technique development, and wherein low temperature compound crystal silicon thin-film transistor (LTPS TFT) technology is to realize an important volume production technology of above-mentioned target.
General low temperature polycrystalline silicon processing procedure utilize mostly quasi-molecule laser annealing (Excimer LaserAnnealing, ELA) technology is carried out, that is utilize excimer laser as thermal source so that amorphous silicon structures is converted to polysilicon structure.When excimer laser through after the optical projection system, can the equally distributed laser beam of produce power, and be projeced on the substrate that deposits amorphous silicon film so that the amorphous silicon film that absorbs excimer laser energy crystallization and be transformed into polysilicon structure again.Because above-mentioned processing procedure is to finish below 600 ℃, general glass substrate or plastic base etc. are all applicable, have therefore more enlarged the range of application of low-temperature polysilicon film transistor LCD.
As previously mentioned, in the making of low-temperature polysilicon film transistor LCD, be to scan substrate at present with an excimer laser beam irradiation, make the amorphous silicon that deposits in advance on the substrate be converted to polysilicon structure by this.The quality of the polysilicon structure of substrate surface directly forms the characteristic of various assembly after the influence, and the quality of polysilicon crystal state mainly is subjected to the influence of binomial factor, and one is the amorphous silicon thickness of substrate surface, and one is the energy density of excimer laser light.Wherein along with the design difference of low-temperature polysilicon film transistor LCD, or the difference of the reaction condition of amorphous silicon film-plating process, the amorphous silicon thickness or the crystalline state of carrying out each batch substrate surface of quasi-molecule laser annealing processing procedure may be different, therefore when carrying out the quasi-molecule laser annealing processing procedure, must select the excimer laser of suitable energy density for use, otherwise the polysilicon crystal of substrate surface is not in good state.In addition, because the principle of excimer laser is that gas is sealed up for safekeeping in an airtight chamber, and utilize the electric power excited gas to produce excimer laser, therefore excimer laser is looked behaviour in service usually and is experienced about ten a few hours and promptly must refill new gas, and the energy density of excimer laser can decay along with service time, so its energy density is wayward.Restriction based on above-mentioned excimer laser itself, even when carrying out the excimer laser processing procedure, preestablished an optimum capacity density, the actual energy density of excimer laser is often because of decay and in advance set point difference to some extent, and influences the crystalline state of polysilicon.
In addition, the method that is used for detecting the polysilicon crystal state of substrate surface at present mainly contains two kinds of detection methods, the first is utilized one scan formula electron microscope (scanning electro microscope, SEM) detect the polysilicon crystal state, another kind then is to utilize deep UV microscope (deep UVmicroscope) to detect the polysilicon crystal state.Wherein, sweep electron microscope is used for inspecting size (grain size) and the shape and the distribution situation of crystal grain, yet because the necessary cutting substrate of the method, and need make sample analysis to highlight crystal boundary (grain boundary) through the excessive erosion chemical treatment, not only do not meet the demand of production line and belong to destructive and detect, be used for sampling check so only fit.The deep UV microscope then is to be used for observing the situation that the surface protuberances of polysilicon is arranged, yet because the method needs sample is amplified to more than 10,000 times, so can only be used for detecting the quality of the polysilicon crystal state in several microns zones on the substrate, if being detected the time that needs to spend a couple of days, the full wafer substrate detects a plate base, very consuming time, its equipment is quite accurate and complicated in addition, costs an arm and a leg.
Even it is not good to use above-mentioned detection method to detect the crystalline state of polysilicon of substrate surface, also can't adjusts rapidly and be fit to the energy density of the excimer laser of situation at that time.Therefore, how to improve existing laser crystallization apparatus and polysilicon crystal status detection method,, become current important topic to improve the yield of detection efficiency and excimer laser processing procedure.
Summary of the invention
Main purpose of the present invention provides a kind of have the laser crystallization system of optical detection and laser energy density calibration function and a kind of method of real-time control quasi-molecule laser annealing processing procedure energy density, to detect the polysilicon crystal state of substrate surface, and adjust energy density to an optimum value of excimer laser in real time, to form good polysilicon structure.
According to a kind of have the laser crystallization system of optical detection and laser energy density calibration function and a kind of method of real-time control quasi-molecule laser annealing program energy density of the present invention.This laser crystallization system includes excimer laser annealing (excimer laser annealing) device and an optical detection apparatus.This quasi-molecule laser annealing device can be carried out an optimum capacity density determination procedure and an excimer laser cycle of annealing, wherein this optimum capacity density program usefulness decides an optimum capacity density of excimer laser, and this quasi-molecule laser annealing program utilizes excimer laser to convert the amorphous silicon (amorphous silicon) of a substrate surface to polysilicon (polysilicon) according to this optimum capacity density.This optical detection apparatus is used for detecting this optimum capacity density in this optimum capacity density determination procedure, and whether judge the crystalline state of polysilicon of this substrate surface in this quasi-molecule cycle of annealing good.In addition, this optical detection apparatus includes a light source generator, a panadaptor and a data handling system.This light source generator is used for producing a visible light to shine this substrate surface.This panadaptor is used for capturing the reflected image that this substrate surface presents.This data handling system then is connected with this quasi-molecule laser annealing device, in order to receiving the detected information of this panadaptor, and according to this quasi-molecule annealing device of described information Control.
The method of the energy density of above-mentioned real-time control quasi-molecule laser annealing program, include and utilize a surface to have the substrate of amorphous silicon layer, carry out an optimum capacity density determination procedure, to determine the optimum capacity density of this quasi-molecule laser annealing program, and the product substrate that provides a surface to have amorphous silicon layer, and the process conditions of the amorphous silicon layer of this product substrate surface is entirely identical to the process conditions of this amorphous silicon layer of this substrate surface, the excimer laser of this optimum capacity density of utilizing previous step again and being determined is shone this product substrate, and the amorphous silicon layer with this product substrate surface is converted to polysilicon layer by this.
Because laser crystallization of the present invention system includes an optical detection apparatus, control the method for the energy density of quasi-molecule laser annealing program in real time in conjunction with the present invention, the energy density that can adjust excimer laser in real time is in an optimum value, so can guarantee the crystalline state of polysilicon layer.
Description of drawings
Fig. 1 is of the present invention one schematic diagram with laser crystallization system of optical detection and laser energy density calibration function.
Fig. 2 utilizes different excimer laser energy densities to shine the schematic diagram of zones of different on the substrate.
Fig. 3 is the graph of a relation of reverberation relative intensity and each regional reflex luminous intensity coefficient of variation of an excimer laser energy density and visible light.
Fig. 4 controls the flow chart of method of the energy density of quasi-molecule laser annealing program in real time for the present invention.
The reference numeral explanation
10 laser crystallization systems, 12 excimer laser apparatus
14 light source generators, 16 panadaptors
18 substrates, 20 substrates
30 optimum capacity density determination procedures, 40 quasi-molecule laser annealing programs
Whether 50 detection polysilicon crystal states are good
Embodiment
Please refer to Fig. 1, Fig. 1 is of the present invention one schematic diagram with laser crystallization system 10 of optical detection and laser energy density calibration function.As shown in Figure 1, laser crystallization system 10 includes the optical detection apparatus that excimer laser annealing (excimer laser annealing) device 12 and is made up of a light source generator 14 and a panadaptor 16.Wherein quasi-molecule laser annealing device 10 can produce excimer laser, and shines a substrate 18 with the wire scan mode, by this with the crystalline state of the silicon thin film on substrate 18 surfaces by amorphous silicon structures crystallization and be converted to polysilicon structure again.Optical detection apparatus is used for then judging whether the silicon thin film via 18 surfaces of the substrate behind the excimer laser irradiation forms good polysilicon structure, wherein light source generator 14 can produce a visible light (for example white light) irradiated substrate 18, and (above-mentioned angle is between the 10-85 degree to be suitable angle with substrate 18, and being preferable) between the 15-30 degree, and owing to can have thrust (figure does not show) as arranging as the array via the polysilicon structure on 18 surfaces of the substrate behind the excimer laser irradiation, therefore the visible light of light source generator 14 generations can receive through thrust (figure does not show) reflection and by panadaptor 16, and demonstrate a plurality of stripeds perpendicular to the excimer laser scanning direction, wherein panadaptor 16 uses a high-speed linear smear camera to capture the reflected image of visible light in the present embodiment, and utilizes a display unit (figure does not show) to show reflected image.
Through finding to have under the situation of energy density of suitable substrate 18 surface appearances after the actual observation when excimer laser, the thrust on substrate 18 surfaces (figure does not show) can be the arrangement of even systematicness, and its arrangement pitches is approximately between 2500 to 3300 rice how, therefore the effect that has similar spectro-grating, in the case can be after formula calculates between 5394-8684 rice how via the optical path difference of the light of thrust (figure do not show) reflection, just be the wavelength of green glow, in other words, when the polysilicon on substrate 18 surfaces has good crystalline state, the thrust on substrate 18 surfaces (figure does not show) can produce maximum constructive interference to green glow, therefore the shown image that goes out of the display unit of panadaptor 16 (figure does not show) can present the green image of whole piece under this situation, and on the other hand, when the energy density of excimer laser does not match, the image that panadaptor 16 demonstrates can present the green striped alternate with black, even complete black situation can occur.
Utilize above-mentioned principle, laser crystallization of the present invention system 10 can carry out an optimum capacity density determination procedure, and carries out a trace routine after an excimer laser cycle of annealing finishes, to detect the crystalline state of polysilicon.Wherein, optimum capacity density program is before carrying out the quasi-molecule laser annealing program, before for example daily maintenance of board, maintenance back, batch products are produced, or under the not good situation of the crystalline state that in the trace routine of QC, detects polysilicon, with decide or adjust in the excimer laser program the optimum capacity density that should adopt.
For further specifying above-mentioned optimum capacity density determination procedure, please refer to Fig. 2 and Fig. 3.Wherein Fig. 2 utilizes different excimer laser energy densities to shine the schematic diagram of zones of different on the substrate, and Fig. 3 is the reverberation relative intensity of an excimer laser energy density and visible light and the reverberation coefficient of variation that each is regional (coefficient of variance, graph of a relation CV).The present invention is when carrying out optimum capacity density determination procedure, at first as shown in Figure 2, one substrate 20 is divided into A, B, C and four zones of D, and utilize the excimer laser (the pairing energy density of regional A, B, C and D is respectively EC-10, EC, EC+10, EC+20 shown in Figure 3 in this scope) of tool different-energy density to shine above-mentioned four zones respectively, the amorphous silicon structures with substrate 20 surfaces is converted to the polysilicon structure with different crystalline states by this.Then utilize the radiation of visible light above-mentioned zone more in regular turn, and measure the catoptrical intensity in each zone.Further measure simultaneously the interior catoptrical Strength Changes in each zone along diverse location on the excimer laser scanning direction, to calculate the coefficient of variation of each regional intensity of reflected light, produce the graph of a relation of the coefficient of variation of the reverberation relative intensity of the excimer laser energy density of Fig. 3 and visible light and each regional reflex luminous intensity by this.
As shown in Figure 3, when the energy density of excimer laser is EC, the catoptrical relative intensity of the area B of EC correspondence is much larger than the catoptrical relative intensity in the zone (A, C and D) of other energy density correspondence, in addition, therefore the coefficient of variation of the intensity of reflected light in B zone can not form visual striped also less than other regional coefficient of variation.In other words, under the irradiation of above-mentioned excimer laser with optimum capacity density, the polysilicon structure on substrate 20 surfaces has good crystalline state.And also coincide with The above results by the shown result of the display unit of panadaptor, as shown in Figure 2, at the shown image that goes out of area B is that the whole piece green is (because the patent icon is not a color map, can't react its realistic colour, explanation hereby), and other regional image, no matter be that interference fringe not of uniform size has all appearred in energy density too small (as regional A) or excessive zone (as zone C and D), when energy density difference is excessive, even complete dark situation can appear.
In above-mentioned optimum capacity density determination procedure, after each regional reflected image can utilize the panadaptor acquisition on the substrate 20, utilize display unit directly to compare catoptrical GTG and striation to judge optimum capacity density.Yet optical detection apparatus of the present invention can also include a data handling system, is used for calculating each regional reverberation relative intensity and coefficient of variation binomial parameter, uses and judges optimum capacity density.In addition, data handling system also can store 16 picked image data of panadaptor, to summarize a best reflected image, and decision is when inferior optimum capacity density, and visual demand stores this suboptimum reflected image and optimum capacity density, with as the reference image data of each reflected image in the future, by the energy density of compare of analysis with more effective control excimer laser.
In case after determining optimum capacity density by optimum capacity density determination procedure, can carry out the quasi-molecule laser annealing program, the energy density of adjusting excimer laser earlier is above-mentioned optimum capacity density, shine the product substrate that has the similar face situation with substrate 20 in regular turn with the wire scan mode again, the amorphous silicon structures of using the product substrate surface is converted to polysilicon structure.It should be noted that wherein that as previously mentioned because the restriction of excimer laser apparatus itself, even set predetermined energy density, the energy density of the actual excimer laser that produces also can decay along with service time.In addition, along with the change of product design or the process conditions difference of amorphous silicon film-plating process, the thickness of amorphous silicon layer, characteristic may be different.Under above-mentioned two kinds of situations, original optimum capacity density of setting possibly can't get a desired effect, and causes the crystalline state of polysilicon not good.Therefore each flake products substrate is after the quasi-molecule laser annealing program, laser crystallization of the present invention system 10 optionally carries out a real-time trace routine, utilizing optical detection apparatus to carry out non-destructive detects, when the polysilicon structure of product substrate is not good, promptly stop the excimer laser program at once, and carry out optimum capacity density determination procedure again with next the flake products substrate that originally was ranked, again determine an optimum capacity density that meets prevailing condition, proceed the quasi-molecule laser annealing program again, reach the function of the energy density of real-time control excimer laser by this.
For further specifying the function that the present invention controls the energy density of excimer laser in real time, please refer to Fig. 4, Fig. 4 controls the flow chart of method of the energy density of quasi-molecule laser annealing program in real time for the present invention.As shown in Figure 4, the present invention's method of controlling the energy density of quasi-molecule laser annealing program in real time includes the following step:
30: carry out an optimum capacity density determination procedure;
40: carry out a laser annealing program; And
50: carry out a trace routine, judge whether the polysilicon crystal state is good, if execution in step 40 is then carried out the laser annealing program with another substrate, execution in step 30 is then carried out another optimum capacity density determination procedure if not.
The present invention controls the method flow of energy density of quasi-molecule laser annealing program in real time, and details are as follows.At first, carry out an optimum capacity density determination procedure, provide a surface to have the substrate of an amorphous silicon layer earlier, and the amorphous silicon layer of substrate surface is distinguished into a plurality of zones, then utilize each zone of excimer laser irradiation of different-energy density, be converted to polysilicon structure with different crystalline states with the amorphous silicon structures that each is regional.Utilize optical detection apparatus to detect each regional crystalline state at last, to determine an optimum capacity density.
Then carry out the quasi-molecule laser annealing program, the product substrate that provides a surface to have amorphous silicon layer, and the process conditions of the amorphous silicon layer of the said goods substrate surface is entirely identical to the process conditions of the amorphous silicon layer of employed substrate surface in the optimum capacity density determination procedure, utilize the excimer laser with above-mentioned optimum capacity density to come the product irradiation substrate again, the amorphous silicon layer with the product substrate surface is converted to the polysilicon layer with well-crystallized state by this.
Carry out trace routine at last again, whether the polysilicon layer that utilizes optical detection apparatus of the present invention to detect the product substrate surface of the above-mentioned quasi-molecule laser annealing program of process has the well-crystallized state.If the crystalline state of polysilicon layer within the acceptable range, a slice has the product substrate of similar face state under then continuing to load, and carries out the quasi-molecule laser annealing program with identical energy density, by that analogy.In case the surface appearance of product substrate is had some change because of designing difference, or in trace routine, detect through the crystalline state of the polysilicon layer of the product substrate surface of quasi-molecule laser annealing program not good, the non-optimum capacity density of energy density of promptly representing present excimer laser, under this situation at once below a flake products substrate carry out another optimum capacity density determination procedure, to determine the optimum capacity density that meets prevailing condition.After the optimum capacity density that decision makes new advances, the energy density of promptly adjusting excimer laser is new optimum capacity density, and proceeds the quasi-molecule laser annealing program, by that analogy.
Compared to known technology, the method that has the laser crystallization system of optical detection and laser energy density calibration function and control the energy density of quasi-molecule laser annealing program in real time of the present invention, can determine an optimum capacity density rapidly by an optical detection apparatus, simultaneously by monitoring the crystalline state of polysilicon layer in real time, can be in real time effective calibration of laser energy density, guarantee the quality of excimer laser processing procedure.
The above only is preferred embodiment of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to the covering scope of patent of the present invention.
Claims (25)
1. laser crystallization system with optical detection and laser energy density calibration function, this laser crystallization system includes:
One excimer laser annealing device, this quasi-molecule laser annealing device can be carried out an optimum capacity density determination procedure and an excimer laser cycle of annealing, wherein this optimum capacity density program usefulness decides an optimum capacity density of excimer laser, and this quasi-molecule laser annealing program utilizes excimer laser to convert the amorphous silicon of a substrate surface to polysilicon according to this optimum capacity density; And
One optical detection apparatus is used for detecting this optimum capacity density in this optimum capacity density determination procedure, and whether judge the crystalline state of polysilicon of this substrate surface in this quasi-molecule cycle of annealing good, and this optical detection apparatus includes:
One light source generator is used for producing a visible light to shine this substrate surface;
One panadaptor is used for capturing the reflected image that this substrate surface presents; And
One data handling system is connected with this quasi-molecule laser annealing device, in order to receiving the detected information of this panadaptor, and according to this quasi-molecule annealing device of described information Control.
2. laser crystallization as claimed in claim 1 system, wherein this quasi-molecule laser annealing device utilizes excimer laser to carry out this optimum capacity density determination procedure and this quasi-molecule laser annealing program with the wire scan mode.
3. laser crystallization as claimed in claim 1 system, wherein this visible light is a white light, and this panadaptor is a high-speed linear smear camera.
4. laser crystallization as claimed in claim 1 system, wherein the plane included angle of this visible light radiation angle and this substrate is between 10 to 85 degree.
5. laser crystallization as claimed in claim 1 system, wherein the plane included angle of this visible light radiation angle and this substrate is between 15 to 30 degree.
6. laser crystallization as claimed in claim 1 system, wherein this data handling system also is connected with a display unit, in order to show the crystalline condition of this substrate surface.
7. method that determines the optimum capacity density of quasi-molecule laser annealing processing procedure, this method includes the following step:
One substrate is provided, and this substrate surface has an amorphous silicon layer, and this amorphous silicon layer differentiation has a plurality of zones;
Carry out an excimer laser cycle of annealing, and the excimer laser irradiation that utilizes different-energy density respectively respectively should the zone; And
Utilize an optical detection apparatus detect respectively should the zone crystalline state, and the energy density with area relative excimer laser of best crystalline state is this optimum capacity density.
8. method as claimed in claim 7, wherein this optimum capacity density is used to provide to this quasi-molecule laser annealing program, with the amorphous silicon layer Structure Conversion with at least one product substrate surface is polysilicon layer, and the process conditions of the amorphous silicon layer of this product substrate surface is entirely identical to the process conditions of this amorphous silicon layer of this substrate surface.
9. method as claimed in claim 7, wherein this quasi-molecule laser annealing program utilizes excimer laser to shine this amorphous silicon layer of this substrate surface with the wire scan mode, recrystallizes into polysilicon structure with the amorphous silicon structures with this amorphous silicon layer.
10. method as claimed in claim 7, wherein this optical detection apparatus includes:
One light source generator, being used for producing a visible light respectively should the zone with what shine this substrate surface; And
One panadaptor, be used for capturing respectively should the zone presents reflected image.
11. method as claimed in claim 10, wherein this optical detection apparatus also includes a data handling system, be used for analyzing and comparing respectively this reflected image that this panadaptor captures, with judge respectively should the zone crystalline state, and then determine the optimum capacity density of this quasi-molecule laser annealing program.
12. method as claimed in claim 11, the step of wherein judging respectively crystalline state that should the zone include respectively should the zone the strong and weak coefficient of variation size with the reflected image that relatively calculates by diverse location in respectively should the zone of reflected image relative brightness.
13. method as claimed in claim 11, wherein this data handling system can store respectively this reflected image that this panadaptor captures, and this data handling system also includes a best reflected image, respectively this reflected image that is used for being captured with this panadaptor is compared, with this optimum capacity density of this quasi-molecule laser annealing program of further adjustment.
14. method as claimed in claim 10, wherein the plane included angle of this visible light radiation angle and this substrate is between 10 to 85 degree.
15. method as claimed in claim 10, wherein the plane included angle of this visible light radiation angle and this substrate is between 15 to 30 degree.
16. a method of controlling the energy density of quasi-molecule laser annealing processing procedure in real time, this method includes the following step:
(a) utilize a surface to have the substrate of amorphous silicon layer, carry out an optimum capacity density determination procedure, to determine the optimum capacity density of this quasi-molecule laser annealing program; And
(b) the product substrate that provides a surface to have amorphous silicon layer, and the process conditions of the amorphous silicon layer of this product substrate surface is entirely identical to the process conditions of this amorphous silicon layer of this substrate surface, utilize the excimer laser of this optimum capacity density that step (a) determined to shine this product substrate again, the amorphous silicon layer with this product substrate surface is converted to polysilicon layer by this.
17. method as claimed in claim 16, wherein this optimum capacity density determination procedure also includes the following step:
One substrate is provided, and this substrate surface has an amorphous silicon layer, and this amorphous silicon layer differentiation has a plurality of zones;
Carry out an excimer laser cycle of annealing, and the excimer laser irradiation that utilizes different-energy density respectively respectively should the zone, with will be respectively should the zone amorphous silicon structures be converted to polysilicon structure with different crystalline states; And
Utilize an optical detection apparatus detect respectively should the zone crystalline state, to determine the optimum capacity density of this quasi-molecule laser annealing program.
18. method as claimed in claim 17, wherein this optical detection apparatus includes:
One light source generator, being used for producing a visible light respectively should the zone with what shine this substrate surface;
One panadaptor, be used for capturing respectively should the zone presents reflected image; And
One data handling system is used for analyzing and comparing respectively this reflected image that this panadaptor captures, with judge respectively should the zone crystalline state;
The energy density that wherein has the area relative excimer laser of best crystalline state is this optimum capacity density.
19. method as claimed in claim 18, the step of wherein judging respectively crystalline state that should the zone include respectively should the zone the strong and weak coefficient of variation size with the reflected image that relatively calculates by diverse location in respectively should the zone of reflected image relative brightness.
20. method as claimed in claim 16, wherein this method also includes a step afterwards at completing steps (b):
(c) carry out a trace routine, utilize this optical detection apparatus to detect the crystalline state of this product substrate surface;
Wherein the crystalline state when this polysilicon layer of this product substrate surface is normal, then repeat step (b), be converted to polysilicon layer with amorphous silicon layer with the other products substrate surface, and when the crystalline state of this polysilicon layer of this product substrate surface undesired, then carry out step (a) once more, to determine another optimum capacity density again.
21. method as claimed in claim 18, wherein this data handling system can store that this panadaptor captures respectively should the zone presents respectively this reflected image, and be used for the reflected image of this product substrate surface of being captured with this trace routine and compare.
22. method as claimed in claim 18, wherein this data handling system can store respectively this reflected image that this panadaptor captures, and this data handling system also includes a best reflected image, respectively this reflected image that is used for being captured with this panadaptor is compared, with this optimum capacity density of this quasi-molecule laser annealing program of further adjustment.
23. method as claimed in claim 18, wherein the plane included angle of this visible light radiation angle and this substrate is between 10 to 85 degree.
24. method as claimed in claim 18, wherein the plane included angle of this visible light radiation angle and this substrate is between 15 to 30 degree.
25. method as claimed in claim 16, wherein this quasi-molecule laser annealing program utilizes excimer laser to shine this amorphous silicon layer of this substrate surface with the wire scan mode, is converted to polysilicon structure with the amorphous silicon structures with this amorphous silicon layer.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US7473657B2 (en) | 2005-02-28 | 2009-01-06 | Nec Lcd Technologies, Ltd. | Laser irradiation method and apparatus for forming a polycrystalline silicon film |
| CN101199923B (en) * | 2006-09-12 | 2011-08-17 | 优志旺电机株式会社 | Excimer light irradiation apparatus |
| CN102844852A (en) * | 2009-12-15 | 2012-12-26 | 爱克西可法国公司 | Method for making semiconductor device by laser irradiation |
| CN104465345A (en) * | 2014-12-29 | 2015-03-25 | 深圳市华星光电技术有限公司 | Laser crystallization system and crystallization energy control method thereof |
| TWI485278B (en) * | 2013-06-08 | 2015-05-21 | Everdisplay Optronics Shanghai Ltd | Upper electrode device |
| CN110993491A (en) * | 2019-12-19 | 2020-04-10 | 信利(仁寿)高端显示科技有限公司 | Automatic correction method for excimer laser annealing process OED |
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| CN105206543B (en) * | 2014-05-26 | 2018-03-02 | 上海微电子装备（集团）股份有限公司 | The monitoring device and method of laser energy density |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7473657B2 (en) | 2005-02-28 | 2009-01-06 | Nec Lcd Technologies, Ltd. | Laser irradiation method and apparatus for forming a polycrystalline silicon film |
| CN101199923B (en) * | 2006-09-12 | 2011-08-17 | 优志旺电机株式会社 | Excimer light irradiation apparatus |
| CN102844852A (en) * | 2009-12-15 | 2012-12-26 | 爱克西可法国公司 | Method for making semiconductor device by laser irradiation |
| CN102844852B (en) * | 2009-12-15 | 2016-06-08 | 激光系统解决方案欧洲公司 | The method making semiconductor device is irradiated by laser |
| TWI485278B (en) * | 2013-06-08 | 2015-05-21 | Everdisplay Optronics Shanghai Ltd | Upper electrode device |
| CN104465345A (en) * | 2014-12-29 | 2015-03-25 | 深圳市华星光电技术有限公司 | Laser crystallization system and crystallization energy control method thereof |
| CN110993491A (en) * | 2019-12-19 | 2020-04-10 | 信利(仁寿)高端显示科技有限公司 | Automatic correction method for excimer laser annealing process OED |
| CN110993491B (en) * | 2019-12-19 | 2023-09-26 | 信利(仁寿)高端显示科技有限公司 | Automatic correction method for OED (optical element design) in excimer laser annealing process |
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