CN110398205B - Chemical vapor deposition monitoring system and method - Google Patents
Chemical vapor deposition monitoring system and method Download PDFInfo
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- CN110398205B CN110398205B CN201910603330.2A CN201910603330A CN110398205B CN 110398205 B CN110398205 B CN 110398205B CN 201910603330 A CN201910603330 A CN 201910603330A CN 110398205 B CN110398205 B CN 110398205B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0658—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of emissivity or reradiation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8422—Investigating thin films, e.g. matrix isolation method
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N2021/8411—Application to online plant, process monitoring
Abstract
The invention belongs to the technical field of film growth monitoring, and discloses a chemical vapor deposition monitoring system and a method, wherein a film material is placed in a chemical vapor deposition device; the optical imaging detection device comprises a femtosecond pulse laser, a first cylindrical lens, a first virtual imaging phase array, a first diffraction grating, a first microscope objective, a second diffraction grating, a second virtual imaging phase array, a second cylindrical lens, a single mode fiber, a photoelectric detector and a high-speed oscilloscope. The invention monitors the growth process of the film material in real time through the optical imaging detection device, quickly obtains the growth process information of the film material in real time, and adjusts the growth process parameters in real time through comparing with the data of the sample database so as to improve the growth quality of the film. The problem of among the prior art chemical vapor deposition equipment can not accomplish quick, real-time monitoring film growth state is solved, the technological effect that can obtain the growth information of film material fast, in real time has been reached.
Description
Technical Field
The invention relates to the technical field of film growth monitoring, in particular to a chemical vapor deposition monitoring system and a chemical vapor deposition monitoring method.
Background
The chip is a foundation stone in high and new technical fields of integrated circuits, high-density storage, display illumination, power electronics, high-temperature sensors of aero-engines and the like, and the preparation of the low-defect semiconductor film is the key of chip manufacturing and plays an irreplaceable role in national economic construction, national strategy emerging industries and national safety. Chemical Vapor Deposition (CVD) is an ideal method for doping and controlling the growth of semiconductor films, and belongs to a typical complex process with multiple physical fields, cross-scale and high precision. In the process of preparing the film, a series of defects are easily generated inside the prepared film material due to the fluctuation of growth conditions and the mixing of pollutants, impurities and the like in the growth environment. The existence of the defects can greatly reduce the performance of the thin film material, and further limit the application of the thin film material in a plurality of fields such as photoelectric devices, integrated circuits and the like.
At present, methods for monitoring the growth of a film in real time exist, a device for measuring the stoichiometric ratio and the quality of each component of a PLD film on line disclosed in a Chinese patent with publication number CN 103196773A and a Raman in-situ monitoring device disclosed in a Chinese patent with an authorized patent number CN 204945048U are used for monitoring the growth state of the film in the growth process of the film, but the duration of the growth process of the film is only nanosecond, picosecond or even femtosecond level at present, and the current monitoring means can not achieve the transient phenomenon of monitoring.
In addition, in the growth of the thin film, the process parameters of the thin film material growth device are generally defined in advance, and the process parameters cannot be adjusted in real time according to the actual situation in the growth process, so that the quality of the thin film cannot be improved more effectively, and the yield is reduced.
Therefore, there is an urgent need for a device and a method for monitoring the film quality of the film material in the growing process rapidly and in real time, adjusting the process parameters of the film material growing device in real time, and improving the film quality.
Disclosure of Invention
The embodiment of the application provides a chemical vapor deposition monitoring system and a chemical vapor deposition monitoring method, and solves the problem that chemical vapor deposition equipment in the prior art cannot monitor the growth state of a film quickly and in real time.
The embodiment of the application provides a chemical vapor deposition monitoring system, includes: a chemical vapor deposition device and an optical imaging detection device;
a thin film material to be monitored is placed in the chemical vapor deposition device;
the optical imaging detection device comprises: the device comprises a femtosecond pulse laser, a first cylindrical lens, a first virtual imaging phase array, a first diffraction grating, a focusing assembly, a pulse restoring assembly, a single-mode optical fiber, a photoelectric detector and a high-speed oscilloscope;
the focusing assembly comprises a first microscope objective;
the pulse reduction assembly comprises a second microscope objective, a second diffraction grating, a second virtual imaging phase array and a second cylindrical lens;
the femtosecond pulse laser is used for generating femtosecond pulses; the first cylindrical lens is used for compressing the femtosecond pulse into a linear pulse; the first virtual imaging phased array is used for converting the linear pulse into a one-dimensional linear pixel array; the first diffraction grating is used for dispersing the one-dimensional linear pixel array to form a two-dimensional illumination pattern; the focusing assembly is used for focusing the two-dimensional illumination pattern on the thin film material to form a space coding pulse; the pulse reduction component is used for reducing the space coding pulse into a single pulse; the single-mode optical fiber is used for performing time domain stretching on the single pulse; the photoelectric detector is used for converting the stretched single pulse into an analog electric signal; the high-speed oscilloscope is used for converting the analog electric signal into a digital electric signal.
Preferably, the focusing assembly further comprises: the first plano-convex lens, the second plano-convex lens and the first reflector;
the first plano-convex lens is positioned on the light path of the first diffraction grating, the second plano-convex lens is positioned on the light path of the first plano-convex lens, and the first reflector is positioned between the second plano-convex lens and the first microscope objective.
Preferably, the pulse reduction assembly further comprises: the second mirror, the third plano-convex lens, and the fourth plano-convex lens;
the second reflector is positioned on the light path of the second microobjective, the third planoconvex lens is positioned on the light path of the second reflector, and the fourth planoconvex lens is positioned between the third planoconvex lens and the second diffraction grating.
Preferably, the optical imaging detection apparatus further includes: a collimator; the collimator is used for coupling the single pulse to the single mode fiber.
Preferably, the optical imaging detection apparatus further includes: a computer; and the computer is used for obtaining data information according to the digital electric signal, and analyzing and storing the data information.
Preferably, the first microscope objective and the second microscope objective are respectively arranged on a six-axis translation stage.
Preferably, the chemical vapor deposition apparatus includes: the growth chamber, the substrate table, the first high light-transmitting glass, the second high light-transmitting glass, the air inlet and the air outlet;
the first high-light-transmittance glass, the second high-light-transmittance glass, the air inlet and the air outlet are respectively arranged on the growth cavity, and the thin film material is placed on the substrate table and is positioned in the growth cavity; the first high-light-transmission glass is positioned between the second plano-convex lens and the first reflector; the second high-transmittance glass is positioned between the second reflecting mirror and the third planoconvex lens.
The embodiment of the application provides a chemical vapor deposition monitoring method, which utilizes the chemical vapor deposition monitoring system to monitor the growth process of a film material in real time.
Preferably, the chemical vapor deposition monitoring method comprises the following steps:
step 1, before a film material grows, establishing a sample database, wherein the sample database comprises reference information;
step 2, monitoring the growth process of the film material in real time to obtain growth state information;
step 3, comparing the growth state information with the reference information, and judging whether the film material meets the growth quality requirement or not according to the comparison result; and if not, changing the growth parameters of the film material in real time.
Preferably, the reference information comprises a relationship between different growth parameters and sample mass; the growth state information comprises the surface appearance and the thickness of the film.
One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:
in the embodiment of the application, the growth process of the thin film material in the chemical vapor deposition device is monitored in real time through the optical imaging detection device, the growth state information of the thin film material can be rapidly obtained in real time, the growth state information of the thin film material is compared with the information in the sample database, the growth process parameters can be adjusted in real time according to the comparison result, and the growth quality of the thin film is further improved. In addition, the optical imaging detection device adopts common optical instruments, so that the system is convenient to realize.
Drawings
In order to more clearly illustrate the technical solution in the present embodiment, the drawings needed to be used in the description of the embodiment will be briefly introduced below, and it is obvious that the drawings in the following description are one embodiment of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a chemical vapor deposition monitoring system according to an embodiment of the present invention;
FIG. 2 is a flow chart of film growth.
101-femtosecond pulse laser, 102-first cylindrical lens, 103-first virtual imaging phase array, 104-first diffraction grating, 105-first plano-convex lens, 106-second plano-convex lens, 107-first reflector, 108-first microscope objective, 109-second microscope objective, 110-second reflector, 111-third plano-convex lens, 112-fourth plano-convex lens, 113-second diffraction grating, 114-second virtual imaging phase array, 115-second cylindrical lens, 116-collimator, 117-single mode fiber, 118-photodetector, 119-high-speed oscilloscope and 120-computer;
201-growth cavity, 202-substrate table, 203-thin film material, 204-first high light-transmission glass, 205-second high light-transmission glass, 206-gas inlet, 207-gas outlet.
Detailed Description
The invention provides a chemical vapor deposition monitoring system, comprising: chemical vapor deposition device, optical imaging detection device. A thin film material to be monitored is placed in the chemical vapor deposition device; the optical imaging detection device comprises: the device comprises a femtosecond pulse laser, a first cylindrical lens, a first virtual imaging phase array, a first diffraction grating, a focusing assembly, a pulse restoring assembly, a single-mode optical fiber, a photoelectric detector and a high-speed oscilloscope; the focusing assembly comprises a first microscope objective; the pulse reduction assembly comprises a second microscope objective, a second diffraction grating, a second virtual imaging phase array and a second cylindrical lens.
The femtosecond pulse laser is used for generating femtosecond pulses; the first cylindrical lens is used for compressing the femtosecond pulse into a linear pulse; the first virtual imaging phased array is used for converting the linear pulse into a one-dimensional linear pixel array; the first diffraction grating is used for dispersing the one-dimensional linear pixel array to form a two-dimensional illumination pattern; the focusing assembly is used for focusing the two-dimensional illumination pattern on the thin film material to form a space coding pulse; the pulse reduction component is used for reducing the space coding pulse into a single pulse; the single-mode optical fiber is used for performing time domain stretching on the single pulse; the photoelectric detector is used for converting the stretched single pulse into an analog electric signal; the high-speed oscilloscope is used for converting the analog electric signal into a digital electric signal.
The invention provides a chemical vapor deposition monitoring method, which utilizes the chemical vapor deposition monitoring system to monitor the growth process of a film material in real time.
The chemical vapor deposition monitoring system and the chemical vapor deposition monitoring method can monitor the growth process of the film material in real time, obtain growth information and can be used for analyzing the growth state of the film. The method monitors the growth process of the film through the 100MHz ultrafast imaging speed, can quickly capture the tiny changes of the film in the growth process, and fully knows the growth process of the film so as to be beneficial to well knowing the growth mechanism of the film.
In order to better understand the technical solution, the technical solution will be described in detail with reference to the drawings and the specific embodiments.
The embodiment provides a chemical vapor deposition monitoring system, as shown in fig. 1, which includes two major components: chemical vapor deposition device, optical imaging detection device.
Wherein the optical imaging detection device comprises: the femtosecond pulse laser device comprises a femtosecond pulse laser device 101, a first cylindrical lens 102, a first virtual imaging phase array 103, a first diffraction grating 104, a first plano-convex lens 105, a second plano-convex lens 106, a first reflector 107, a first microscope objective lens 108, a second microscope objective lens 109, a second reflector 110, a third plano-convex lens 111, a fourth plano-convex lens 112, a second diffraction grating 113, a second virtual imaging phase array 114, a second cylindrical lens 115, a collimator 116, a single mode optical fiber 117, a photoelectric detector 118, a high-speed oscilloscope 119 and a computer 120.
The chemical vapor deposition apparatus includes: the growth chamber 201, the substrate stage 202, the first high light transmittance glass 204, the second high light transmittance glass 205, the gas inlet 206, and the gas outlet 207.
The first cylindrical lens 102 is at a distance (e.g., d)1100mm) in parallel in front of the femtosecond pulse laser 101, the first virtual imaging phase array 103 being at a certain distance (e.g., d)2100mm) and tilt angle (e.g., θ)145 deg. in front of the first cylindrical lens 102, and the first diffraction grating 104 is disposed at a distance (e.g., d)3100mm) and tilt angle (e.g., θ)245 deg. in front of the first virtual imaging phase array 103, the first plano-convex lens 105 is placed at a distance (e.g., d)450mm) and angle of inclination (e.g. theta)345 deg. in front of the first diffraction grating 104, and the second plano-convex lens 106 is disposed at a distance (e.g., d)5150mm) in parallel in front of the first plano-convex lens 105, the first mirror 107 being at a certain distance (e.g. d)650mm) and angle of inclination (e.g. theta)422.5 deg. in front of the second plano-convex lens 106, the first microscope objective 108 being at a distance (e.g. d)750mm) and angle of inclination (e.g. theta)522.5 °) in front of the first mirror 107 and the first microscope objective 108 on a six-axis translation stage; a thin film material 203 is placed on the substrate stage 202, the thin film material 203 being spaced apart from the first microscope objective 108 by a distance (e.g., d)820 mm); the second microscope objective 109 is arranged at a distance (e.g. d)920mm) and angle of inclination (e.g. theta)645 deg.) in front of the thin film material 203 and the second microscope objective 109 is placed on a six-axis translation stage; the second mirror 110 is at a distance (e.g., d)1050mm) and angle of inclination (e.g. theta)722.5 °) is placed in front of the second microscope objective 109The third plano-convex lens 111 is at a distance (e.g., d)1150mm) and angle of inclination (e.g. theta)822.5 deg. in front of the second reflector 110, and the fourth plano-convex lens 112 is disposed at a distance (e.g., d)12150mm) in parallel in front of the third plano-convex lens 111, and the second diffraction grating 113 is disposed at a certain distance (e.g., d)1350mm) and angle of inclination (e.g. theta)945 deg. in front of the fourth plano-convex lens 112, and the second virtual imaging phase array 114 is at a distance (e.g., d)1450mm) and angle of inclination (e.g. theta)1045 deg. in front of the second diffraction grating 113, and the second cylindrical lens 115 is disposed at a certain distance (e.g., d)1550mm) and angle of inclination (e.g. theta)11At 45 deg. in front of the second virtual imaging phased array 114, the collimator 116 is at a distance (e.g. d)1620mm) in parallel in front of the second cylindrical lens 115; the collimator 116, the single-mode fiber 117, the photodetector 118, the high-speed oscilloscope 119, and the computer 120 are connected in series in sequence. The first high-transparency glass 204 is placed in parallel between the second plano-convex lens 106 and the first reflector 107; the second high light-transmitting glass 205 is disposed in parallel between the second mirror 110 and the third planoconvex lens 111.
The femtosecond pulse laser 101 is used for generating femtosecond pulses; the first cylindrical lens 102 is used for compressing the femtosecond pulse into a linear pulse; the first virtual imaging phased array 103 is used for converting the linear pulse into a one-dimensional linear pixel array; the one-dimensional linear pixel array passes through the first diffraction grating 104 and then is dispersed at different angles in a direction perpendicular to the one-dimensional linear pixel array to generate a two-dimensional illumination pattern; the two-dimensional illumination pattern sequentially passes through the first plano-convex lens 105, the second plano-convex lens 106, the first high-transmittance glass 204, the first reflector 107 and the first microscope objective 108 and then is focused on the thin film material 203, and information on the surface of the object is encoded into the two-dimensional illumination pattern to complete space encoding; the first microscope objective 108 is placed on a six-axis translation stage, and when measurement is needed, the first microscope objective 108 is moved to a measurement position through the six-axis translation stage; when the measurement is temporarily not needed, the first microscope objective 108 is moved to a position far away from the substrate stage by a six-axis translation stage, so as to prevent the first microscope objective 108 from being always at a high temperature and further damage the first microscope objective 108; after being reflected by the substrate stage 202 with high reflectivity, the spatially encoded two-dimensional illumination pattern is restored to a single pulse after sequentially passing through the second microscope objective 109, the second mirror 110, the second high-transmittance glass 205, the third plano-convex lens 111, the fourth plano-convex lens 112, the second diffraction grating 113, the second virtual imaging phase array 114, and the second cylindrical lens 115; the second microscope objective 109 is placed on a six-axis translation stage, and when measurement is needed, the second microscope objective 109 is moved to a measurement position through the six-axis translation stage; when the measurement is temporarily not needed, the second microscope objective 109 is moved to a position far away from the substrate stage 202 by a six-axis translation stage, so that the second microscope objective 109 is prevented from being always at a high temperature and further damaging the second microscope objective 109; the collimator 116 is used for coupling the recovered single pulse into the single mode fiber 117; the single mode fiber 117 stretches the pulse in the time domain and can be detected by the photodetector 118; the photodetector 118 is used for converting the stretched single pulse into an analog electrical signal; the high-speed oscilloscope 119 is configured to convert the acquired analog electrical signal into a digital electrical signal, and transmit the digital electrical signal to the computer 120; the computer 120 is used for processing the digital electric signals to obtain data, and analyzing and storing the data.
Specifically, the femtosecond pulse laser 101 is a coherent (coherent) femtosecond laser with a center wavelength of 780 nm; the first cylindrical lens 102 is LA1470-C of thorlabs; the thickness L of the first virtual imaging phased array 103 is 10 mm; the groove density of the first diffraction grating 104 is 600/nm; the focal length f of the first plano-convex lens 105 is 50 nm; the focal length f of the second plano-convex lens 106 is 100 nm; the first mirror 107 is BB1-E03 from thorlabs; the numerical aperture of the first microscope objective 108 is 0.65, and the magnification is 50 x; the thin film material 203 is diamond; the numerical aperture of the second microscope objective 109 is 0.65, and the magnification is 50 x; the second mirror 110 is BB1-E03 from thorlabs; the focal length f of the third planoconvex lens 111 is 100 nm; the focal length f of the fourth plano-convex lens 112 is 50 nm; the groove density of the second diffraction grating 113 is 600/nm; the thickness L of the second virtual imaging phased array 114 is 10 mm; the second cylindrical lens 115 is LA1470-C of thorlabs; the collimator 116 is F220FC-780 of thorlabs; the photodetector 118 is Newport-1481-s from Newport corporation; the single mode optical fiber 117 is Nufern 780-HP from Nufern corporation; the high-speed oscilloscope 119 adopts a DSA91304A of the German technology of America; the computer 120 is a server. Such as MPCVD or MOCVD.
The chemical vapor deposition monitoring system can be used for monitoring the growth process of the thin film material in real time. Referring to fig. 2, the growth process of the film in the chemical vapor deposition device is monitored in real time through an optical imaging detection device, information such as the surface appearance and thickness of the film is obtained quickly and in real time, a large number of similar film materials are analyzed and classified through a machine learning algorithm in the early stage, the relation between different growth parameters and the quality of the sample is obtained, a sample database is established, the growth state of the film materials obtained in real time is compared with the database, whether the growth state of the sample meets the growth quality requirement is judged once every 30 minutes, if the growth state of the sample does not meet the growth quality requirement, the growth parameters are changed in real time through the machine learning algorithm, and the film materials with better quality are obtained.
In summary, the invention adds an optical imaging detection device in the chemical vapor deposition device, the imaging frame rate of the device can reach 100MHz or even 1THz, the growth process of the film is monitored in real time, the information such as the surface appearance of the film material, the thickness of the sample and the like is obtained quickly and in real time, a large amount of similar film materials are analyzed and classified by machine learning in the early stage, the relationship between different growth parameters and the quality of the sample is obtained, a sample database is established, the growth state of the film material obtained in real time is compared with the database, and the growth parameters can be changed in real time by adopting a machine learning algorithm according to the comparison result, so that the film material with better quality is obtained.
Finally, it should be noted that the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention has been described in detail with reference to examples, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, which should be covered by the claims of the present invention.
Claims (5)
1. A chemical vapor deposition monitoring system, comprising: a chemical vapor deposition device and an optical imaging detection device;
a thin film material to be monitored is placed in the chemical vapor deposition device;
the optical imaging detection device comprises: the device comprises a femtosecond pulse laser, a first cylindrical lens, a first virtual imaging phase array, a first diffraction grating, a focusing assembly, a pulse restoring assembly, a single-mode optical fiber, a photoelectric detector and a high-speed oscilloscope;
the focusing assembly comprises a first microscope objective, a first plano-convex lens, a second plano-convex lens and a first reflector;
the pulse reduction assembly comprises a second microscope objective, a second diffraction grating, a second virtual imaging phase array, a second cylindrical lens, a second reflector, a third plano-convex lens and a fourth plano-convex lens;
the first diffraction grating, the first plano-convex lens, the second plano-convex lens, the first reflector, the first microobjective, the second reflector, the third plano-convex lens, the fourth plano-convex lens, the second diffraction grating, the second virtual imaging phase array and the second cylindrical lens are sequentially arranged in the light path direction;
the chemical vapor deposition apparatus includes: the growth chamber, the substrate table, the first high light-transmitting glass, the second high light-transmitting glass, the air inlet and the air outlet;
the first high-light-transmittance glass, the second high-light-transmittance glass, the air inlet and the air outlet are respectively arranged on the growth cavity, and the thin film material is placed on the substrate table and is positioned in the growth cavity; the first high-light-transmission glass is positioned between the second plano-convex lens and the first reflector; the second high-transmittance glass is positioned between the second reflecting mirror and the third planoconvex lens;
the femtosecond pulse laser is used for generating femtosecond pulses; the first cylindrical lens is used for compressing the femtosecond pulse into a linear pulse; the first virtual imaging phased array is used for converting the linear pulse into a one-dimensional linear pixel array; the first diffraction grating is used for dispersing the one-dimensional linear pixel array to form a two-dimensional illumination pattern; the focusing assembly is used for focusing the two-dimensional illumination pattern on the thin film material to form a space coding pulse; the pulse reduction component is used for reducing the space coding pulse into a single pulse; the single mode fiber is used for performing time domain stretching on the single pulse; the photoelectric detector is used for converting the stretched single pulse into an analog electric signal; the high-speed oscilloscope is used for converting the analog electric signal into a digital electric signal;
the optical imaging detection device monitors the growth process of the film material in the chemical vapor deposition device in real time to obtain the surface appearance and thickness of the film.
2. The chemical vapor deposition monitoring system of claim 1, wherein the optical imaging detection device further comprises: a collimator; the collimator is used for coupling the single pulse to the single mode fiber.
3. The chemical vapor deposition monitoring system of claim 1, wherein the optical imaging detection device further comprises: a computer; and the computer is used for obtaining data information according to the digital electric signal, and analyzing and storing the data information.
4. The chemical vapor deposition monitoring system of claim 1, wherein the first and second micro-objectives are each placed on a six-axis translation stage.
5. A chemical vapor deposition monitoring method is characterized in that the chemical vapor deposition monitoring system of any one of claims 1 to 4 is used for monitoring the growth process of a thin film material in real time;
the chemical vapor deposition monitoring method comprises the following steps:
step 1, before a film material grows, establishing a sample database, wherein the sample database comprises reference information; the reference information is the relation between different growth parameters and sample quality obtained by analyzing and classifying a large amount of similar thin film materials through machine learning;
step 2, monitoring the growth process of the film material in real time to obtain growth state information including the surface appearance and thickness of the film;
step 3, comparing the growth state information with the reference information, and judging whether the film material meets the growth quality requirement or not according to the comparison result; and if not, changing the growth parameters of the film material in real time.
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| CN112016676B (en) * | 2020-08-18 | 2021-07-02 | 武汉大学 | Semiconductor film process parameter optimization system predicted by neural network model |
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| CN107478175A (en) * | 2017-08-18 | 2017-12-15 | 东南大学 | A kind of atomic layer deposition thin film in-situ monitoring control system |
| CN108362721A (en) * | 2018-01-16 | 2018-08-03 | 长春理工大学 | A kind of device and method of in-situ monitoring ALD deposition thin-film material quality |
| CN109100304B (en) * | 2018-08-10 | 2020-12-01 | 武汉大学 | Single-pixel high-speed super-resolution imaging device and method based on time domain stretching |
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