CN1550532A - Polishing composition - Google Patents
Polishing composition Download PDFInfo
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- CN1550532A CN1550532A CNA2004100435122A CN200410043512A CN1550532A CN 1550532 A CN1550532 A CN 1550532A CN A2004100435122 A CNA2004100435122 A CN A2004100435122A CN 200410043512 A CN200410043512 A CN 200410043512A CN 1550532 A CN1550532 A CN 1550532A
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- acid
- polishing
- polishing composition
- alumina
- succinic acid
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Dispersion Chemistry (AREA)
Abstract
A polishing composition comprises an alumina grain which contains alpha-alumina as the main component; fumed alumina; a polishing accelerator which contains at least one component selected from the group consisting of organic acids, inorganic acids, and salts thereof; and water.
Description
Technical Field
The present invention relates to a polishing composition for polishing a substrate such as a magnetic disk substrate.
For a magnetic disk used as a hard disk serving as a storage element of a computer, it is strongly required to have a high recording density. Therefore, the magnetic disk substrate is required to have excellent surface characteristics.
Background
Japanese laid-open patent publication No. 7-216345 and Japanese national phase laid-open patent publication No. 11-511394 disclose improved polishing compositions to satisfy the above-mentioned requirements for the substrate.A polishing composition in Japanese laid-open patent publication No. 7-216345 contains water, an alumina abrasive, and a polishing accelerator composed of a molybdate and an organic acid.A polishing composition in Japanese laid-open patent publication No. 11-511394 contains α -alumina particles as an abrasive, a solid material such as hydrated alumina as a polishing accelerator, and water.A content of α -alumina particles in the polishing composition is set to 1-50% by weight based on the total solid material.
However, the former polishing composition has a low polishing rate for a substrate. The latter polishing composition has a high polishing rate for a substrate, but shows only a small improvement in the surface roughness of the substrate after polishing.
Disclosure of Invention
Accordingly, it is an object of the present invention to provide a polishing composition more suitable for polishing a magnetic disk substrate.
To achieve the foregoing and other objects and in accordance with the purpose of the present invention, a polishing composition is provided that includes alumina particles containing α -alumina as a main component, fumed alumina, a polishing accelerator containing at least one component selected from the group consisting of organic acids, inorganic acids, and salts of these acids, and water.
The present invention also provides a method of polishing an object. The method comprises the following steps: the above-described polishing composition is prepared, and the surface of an object is polished with this polishing composition.
Other aspects and advantages of the present invention will become apparent from the following description, which illustrates, by way of example, embodiments of the principles of the invention.
Detailed Description
One embodiment of the present invention will now be described.
The polishing composition according to this embodiment comprises (a) alumina particles containing α -alumina as a main component, (b) fumed alumina, (c) a polishing accelerator containing at least one component selected from the group consisting of organic acids, inorganic acids, and salts of these acids, and (d) water.
The polishing composition is used for polishing a substrate such as a magnetic disk. The substrate may be a substrate formed by providing a blank composed of nickel-phosphorus with an electroless plating layer on an aluminum alloy, or a substrate containing nickel-iron, boron carbide or carbon.
Alumina particles are abrasives that function to mechanically polish objects, "containing α -alumina as a main component" means that α -conversion is not less than 50% among crystal forms constituting the alumina particles, the term "α -conversion" used herein is derived from integrated intensity ratio of (113) plane diffraction lines by X-ray diffraction measurement (integrated intensity), alumina particles may contain delta-alumina, theta-alumina, kappa-alumina, and α -alumina, or may also contain α -alumina having different α -conversion rates, when α -conversion is less than 50%, mechanical polishing ability of the alumina particles may be low, for abrasives other than alumina particles, known abrasives are silica, titanium oxide, and the like, but their mechanical polishing ability is low.
The alumina particles preferably have an average particle size, as measured by laser diffraction and scattering methods, of no greater than 2.0 μm, more preferably from 0.05 to 1.0 μm, including 0.05 μm and 1.0 μm. The average particle diameter of the alumina particles can be measured by a laser diffraction and scattering type particle diameter measuring machine (LS-230 manufactured by Coulter). If the average particle size is less than 0.05 μm, the mechanical polishing ability of the alumina particles may be low. If the average particle diameter exceeds 2.0. mu.m, the surface roughness of the object to be polished may be poor and scratches may be generated on the surface of the polished object.
The alumina particles are preferably present in the polishing composition in an amount of 0.01 to 40 wt.%, including 0.01 and 40 wt.%. More preferably 2-25% by weight, including 2% and 25%. If the content is less than 0.01% by weight, the polishing rate of the polishing composition may decrease. If the content exceeds 40% by weight, the alumina particles may agglomerate in the polishing composition, with the result that the stability of the polishing composition is impaired.
The term "microwaviness" as used herein refers to the degree of micro-irregularity, as measured by a surface roughness meter for a given measurement wavelength, which is expressed by its height (Å). if the polishing composition contains fumed silica, instead of fumed alumina, the polishing rate of the polishing composition is low because the polishing ability of fumed silica is low, and as a result, it is impossible to reduce the surface roughness of the object being polished.
Chemical reaction formula 1
The average particle diameter of the primary particles of the fumed alumina, as determined from the specific surface area measured by the BET method, is preferably 0.005 to 0.5 μm, (including 0.005 μm and 0.5 μm), more preferably 0.01 to 0.1 μm, (including 0.01 μm and 0.1 μm). The maximum secondary particle size of the fumed alumina as measured by laser diffraction and scattering methods is preferably about 1.5 μm. In the polishing composition, the fumed alumina particles associate to form aggregates. If the fumed alumina has an average primary particle size of less than 0.005 μm, the polishing rate of the polishing composition can be low because the dispersion of the alumina particles is increased only slightly. If the average primary particle size of the fumed alumina exceeds 0.5 μm or the maximum secondary alumina particle size exceeds 1.5 μm, the stability of the polishing composition may be impaired because aggregates of the fumed alumina are large, with the result that precipitation may occur in the polishing composition.
The fumed alumina is preferably present in the polishing composition in an amount no greater than 50 wt.%, more preferably 0.005 to 20 wt.% (including 0.005 wt.% and 20 wt.%), and most preferably 1 to 12.5 wt.% (including 1 wt.% and 12.5 wt.%) of the alumina particles. If the fumed alumina content is less than 0.005 wt.% of the alumina particles, it may not be sufficient to sufficiently increase the dispersion of the alumina particles, with the result that the polishing rate of the polishing composition may be lower. If the content of the fumed alumina exceeds 50% by weight of the alumina particles, the mechanical polishing ability of the alumina particles may be reduced because the amount of the fumed alumina acting on the surfaces of the alumina particles is excessive, with the result that the polishing rate of the polishing composition may be low.
The polishing accelerator plays a role of accelerating mechanical polishing by alumina and fumed alumina. The polishing accelerator preferably contains at least one acid selected from organic acids and inorganic acids because these acids have a strong chemical polishing ability. More preferably, the polishing accelerator comprises at least one component selected from the group consisting of citric acid, maleic anhydride, malic acid, glycolic acid, succinic acid, itaconic acid, malonic acid, iminodiacetic acid, gluconic acid, lactic acid, mandelic acid, tartaric acid, crotonic acid, nicotinic acid, acetic acid, thiomalic acid, formic acid, oxalic acid, carboxyethylthiosuccinic acid, aluminum nitrate and iron nitrate, and most preferably comprises at least one acid selected from the group consisting of citric acid, maleic acid, glycolic acid, succinic acid, itaconic acid, iminodiacetic acid and carboxyethylthiosuccinic acid.
The polishing accelerator is preferably present in the polishing composition in an amount of 0.01 to 10 wt.% (including 0.01 wt.% and 10 wt.%), more preferably 0.05 to 5 wt.% (including 0.05 wt.% and 5 wt.%), and most preferably 0.1 to 3 wt.% (including 0.1 wt.% and 3 wt.%). If the content of the polishing accelerator is less than 0.1% by weight, the polishing rate of the polishing composition may be low. If the content of the polishing accelerator exceeds 10% by weight, the polishing rate of the polishing composition may become saturated, so that it is uneconomical.
In the polishing composition, water serves as a medium for dissolving and dispersing components other than water. Water with as little impurity content as possible is preferred. More specifically, pure water, ultrapure water, or distilled water is preferable.
The polishing composition according to the present embodiment is prepared by mixing alumina particles, fumed alumina, a polishing accelerator, and water. The order of addition of each component during mixing can be in any order, or all components can be added simultaneously.
When the surface of the magnetic disk substrate is polished with the polishing composition of the present embodiment, for example, the surface of the substrate is rubbed with a polishing pad while supplying the polishing composition to the surface of the substrate.
In the manufacturing process of a substrate, a plurality of polishing steps are generally performed, and the polishing composition according to the present embodiment is preferably used in the first polishing step of the plurality of steps. The first polishing step is typically used to remove waviness and surface defects such as large scratches and substrate irregularities that may not be removed in subsequent polishing steps. On the other hand, the final polishing step is generally used to adjust to the desired surface roughness of the substrate and to remove surface defects generated in the previous polishing step and surface defects that cannot be removed in the previous polishing step.
This embodiment has the following advantages.
The polishing composition according to the present embodiment includes: alumina particles and fumed alumina for mechanically polishing an object, and a polishing accelerator for accelerating mechanical polishing of the alumina particles and fumed alumina. Therefore, the polishing composition has an ability to polish an object, particularly an ability to polish a magnetic disk substrate at high speed. In other words, the polishing composition according to the present embodiment has a high polishing rate for a substrate.
According to the present embodiment, the fumed alumina in the polishing composition has the ability to reduce microwaviness of the surface of the object under polish. Thus, the polished object has reduced surface roughness.
It will be apparent to those skilled in the art that the present invention can be embodied in many other specific forms without departing from the spirit or scope of the invention. In particular, it is to be understood that the present invention may be embodied in the following forms.
The polishing composition can further comprise an alumina sol. The alumina sol functions to suppress surface defects such as minute protrusions and minute grooves on the object under polish, and functions to reduce the surface roughness of the object under polish by reducing the minute waviness of the surface of the object under polish. This is conceivably because the alumina sol adheres to the surfaces of the alumina particles, thereby improving the mechanical polishing ability of the alumina particles. In addition, since the alumina sol is dispersed in the polishing composition in a colloidal state, the alumina sol prevents precipitation of alumina particles by increasing the dispersion degree of the alumina particles, and allows the alumina particles to be easily held by the polishing pad during polishing of an object.
The alumina sol may contain at least one component selected from the group consisting of hydrated alumina and aluminum hydroxide dispersed in a colloidal state in an acidic aqueous solution. The hydrated alumina may be boehmite, pseudoboehmite, diaspore, gibbsite, and bayerite. Acidic aqueous solutions are prepared by adjusting the pH of the water to acidic with organic acids, inorganic acids or salts of these acids. The alumina sol may comprise two or more hydrated aluminas. The hydrated alumina is preferably boehmite and pseudoboehmite because boehmite and pseudoboehmite have a considerably high ability to suppress surface defects and reduce the surface roughness of an object to be polished.
The content of the alumina sol in the polishing composition is preferably 0.01 to 20% by weight, including 0.01% by weight and 20% by weight, in terms of the solid content of the alumina sol); more preferably 0.05 to 15% by weight, (including 0.05% by weight and 15% by weight), most preferably 0.1 to 10% by weight, (including 0.1% by weight and 10% by weight). If the content is less than 0.01% by weight, the effect of improving the mechanical polishing ability of the alumina particles may be small because the amount of the alumina sol adhering to the surfaces of the alumina particles is insufficient, and as a result, the surface roughness of the object to be polished may not be sufficiently reduced. If the amount of the alumina sol exceeds 20% by weight, the effect of suppressing surface defects and the effect of reducing the surface roughness of the object to be polished may become saturated, and therefore, it is uneconomical.
The polishing composition may further comprise a surfactant, a rust inhibitor, a precipitation inhibitor and the like. The surfactant increases the dispersion of the alumina particles in the polishing composition. The surfactant may be a nonionic surfactant or an anionic surfactant. The nonionic surfactant is preferably a polyoxyethylene polyoxypropylene alkyl ether represented by the following formula 2, a polyoxyethylene polyoxypropylene copolymer represented by the following formula 3 or 4, a polyoxyethylene sorbitan fatty acid ester, a polyoxyethylene sorbitol fatty acid ester, or a polyurethane associative surfactant represented by the following formula 5. The anionic surfactant is preferably a polycarboxylate, such as sodium polyacrylate, or a polymer, such as a copolymer of isoprene sulfonic acid and acrylic acid, including monomers derived from isoprene sulfonic acid or its salts. When the polishing composition containing the nonionic surfactant listed above or the anionic surfactant listed above is used for polishing the surface of a magnetic disk substrate, the flatness of the substrate surface is improved because the surface deterioration of the peripheral portion of the substrate is suppressed.
General formula 2
In formula 2, R represents an alkyl group, and l and m each represent an integer.
General formula 3
In formula 3, n, o and p each represent an integer.
General formula 4
In formula 4, n, o and p each represent an integer.
General formula 5
In formula 54, X represents a residue of a polyether polyol derived from a polyether polyol having an active oxygen atom and an alkylene oxide compound (however, the polyether chain contains 20 to 90% by weight of oxyethylene groups), t represents an integer between 2 and 8 inclusive (2 and 8 ═ the number of hydroxyl groups in one molecule of the above polyether polyol), Y represents a divalent hydrocarbon group, Z represents a residue of a monovalent compound having an active oxygen atom, and u represents an integer of 3 or more.
The polishing composition can be prepared by diluting the stock solution with water immediately before use.
The polishing of the magnetic disk substrate can be carried out in one polishing step. In such a case, the polishing composition can be used in this one polishing step.
The polishing composition can be used in polishing steps other than the first polishing step. For example, the polishing composition can be used in a final polishing step.
The polishing composition can be used for polishing objects other than magnetic disk substrates. The object other than the magnetic disk substrate may be an object containing tungsten, copper, silicon, glass, or ceramic. More specifically, the object may be a semiconductor wafer and an optical lens.
The present invention will now be described in more detail with reference to reference examples and comparative examples.
In examples 1 to 30, stock solutions were prepared by mixing alumina particles, fumed alumina, a polishing accelerator and water, and, if necessary, an alumina sol. In comparative examples 1 to 44, the stock solution contained at least two components selected from alumina particles, fumed alumina, polishing accelerator. Specific compositions of the respective stock solutions are shown in table 1.
In example 3, example 24 and comparative example 7, the alumina particles in the stock solution were alumina particles having a conversion of α -of 97% in examples 22-26 and comparative examples 2, 3, 22, 23, 27 and 28, the alumina particles in the stock solution were prepared by adding 10% by weight of boehmite to an acidic aqueous solution (pH3) and then dispersing the solution in a colloidal state using a homomixer.
The polishing compositions were prepared by diluting each stock solution with three volumes of water. Using various polishing compositions, the surfaces of the magnetic disk substrates were polished under the following conditions.
< polishing conditions >
Polished substrate: electroless Ni-P plated substrates 3.5 inch in diameter
Polishing machine: a single-side polisher (Udagawa Optical Machine co., ltd. manufacture, fixed base diameter 300 mm).
Polishing machine: a single-side polisher (Udagawa Optical Machine co., ltd. manufacture, fixed base diameter 300 mm).
Polishing the pad: polyurethane gasket (CR200, manufactured by Kanebo Co., Ltd.)
Polishing load: 100g/cm2
Number of revolutions of lower fixed base: 100 revolutions per minute
Supply amount of polishing composition: 8 ml/min
Polishing time: long enough to remove the machining allowance of 1 μm (previously measured by preliminary experiments)
For the polishing process performed under the above conditions, the polishing rate is calculated according to the following equation. The ratio of the polishing rate to that in comparative example 6 can be found by dividing the calculated polishing rate by the polishing rate in comparative example 6. The column entitled "polishing rate" in table 1 represents the ratio of the polishing rate to the polishing rate in comparative example 6.
< equation >
Polishing Rate [ mu m/min]The amount of reduction of the substrate due to polishing [ g ]]Div (area of polished substrate surface [ cm ]2]Density of x Ni-P coating layer [ g/cm3]X polishing time (min)])×104。
The size of the microwaviness was measured on the surface of the substrate after polishing with a non-contact surface roughness meter (Micro XAM manufactured by PhaseShift, objective lens: 10X; filter: Gaussian band pass; Ra value measured at 80 to 450 μm). Measurements were made on each of the front and rear surfaces at two locations on a substrate, and the average Ra value of the four measurements was taken as the size of the microwaviness. The ratio of the size of the microwaviness to the size of the microwaviness in comparative example 6 was obtained by dividing the size of the microwaviness thus measured by the size of the microwaviness in comparative example 6. The column entitled "microwaviness" in table 1 indicates the ratio of the size of the microwaviness to the microwaviness size in comparative example 6. The hyphen ("-") in the column entitled "microwaviness" indicates that the size of the microwaviness cannot be measured due to surface defects.
TABLE 1
| (a) Alumina particles | (b) Pyrogenic aluminium oxide | (c) Polishing accelerator | (d) Alumina sol | Polishing speed | Micro-wave | |
| Seed particle size content Class (. mu.m) (wt%) | Seed particle size content Class (. mu.m) (wt%) | Seed content Class (wt%) | Seed content Class (wt%) | |||
| Example 1 | α-Al2O3 0.8 16 | Pyrogenic Al2O3 0.013 1.7 | Succinic acid 1.0 | - | 170.6％ | 130.5％ |
| Example 2 | α-Al2O3 0.6 16 | Pyrogenic Al2O3 0.013 1.7 | Succinic acid 1.0 | - | 109.8％ | 83.6％ |
| Example 3 | α-Al2O3 0.3 16 | Pyrogenic Al2O3 0.013 1.7 | Succinic acid 1.0 | - | 78.6％ | 87.3％ |
| Example 4 | α-Al2O3 0.2 16 | Pyrogenic Al2O3 0.013 1.7 | Succinic acid 1.0 | - | 114.9％ | 82.5％ |
| Example 5 | α-Al2O3 0.6 17 | Pyrogenic Al2O3 0.013 1.0 | Succinic acid 1.0 | - | 114.3％ | 96.7％ |
| Example 6 | α-Al2O3 0.6 14 | Pyrogenic Al2O3 0.013 3.5 | Succinic acid 1.0 | - | 109.5％ | 84.4％ |
| Example 7 | α-Al2O3 0.6 13 | Pyrogenic Al2O3 0.013 5.4 | Succinic acid 1.0 | - | 95.2％ | 80.4％ |
| Example 8 | α-Al2O3 0.6 11 | Pyrogenic Al2O3 0.013 7.2 | Succinic acid 1.0 | - | 95.2％ | 81.1％ |
| Example 9 | α-Al2O3 0.6 9.0 | Pyrogenic Al2O3 0.013 9.0 | Succinic acid 1.0 | - | 100.0％ | 80.7％ |
| Example 10 | α-Al2O3 0.6 16 | Pyrogenic Al2O3 0.013 4.4 | Succinic acid 1.0 | - | 115.7％ | 86.8％ |
| Example 11 | α-Al2O3 0.6 16 | Pyrogenic Al2O3 0.013 9.0 | Succinic acid 1.0 | - | 115.7％ | 88.7％ |
| Example 12 | α-Al2O3 0.6 16 | Pyrogenic Al2O3 0.013 1.7 | Succinic acid 1.7 | - | 109.8％ | 86.2％ |
| Example 13 | α-Al2O3 0.6 16 | Pyrogenic Al2O3 0.013 1.7 | Malic acid 1.0 | - | 109.7％ | 110.3％ |
| Example 14 | α-Al2O3 0.6 16 | Pyrogenic Al2O3 0.013 1.7 | Citric acid 1.0 | - | 109.7％ | 105.6％ |
| Example 15 | α-Al2O3 0.6 16 | Pyrogenic Al2O3 0.013 1.7 | Glycolic acid 1.0 | - | 80.6％ | 99.4％ |
| Example 16 | α-Al2O3 0.6 16 | Pyrogenic Al2O3 0.013 1.7 | Itaconic acid 1.0 | - | 109.7％ | 99.4％ |
| Example 17 | α-Al2O3 0.6 16 | Pyrogenic Al2O3 0.013 1.7 | Maleic acid 1.0 | - | 125.8％ | 100.0％ |
| Example 18 | α-Al2O3 0.6 16 | Pyrogenic Al2O3 0.013 1.7 | Nicotinic acid 1.0 | - | 103.2％ | 103.1％ |
| Example 19 | α-Al2O3 0.6 16 | Pyrogenic Al2O3 0.013 1.7 | Lactic acid 1.0 | - | 103.2％ | 103.7％ |
| Example 20 | α-Al2O3 0.6 16 | Pyrogenic Al2O3 0.013 1.7 | Tartaric acid 1.0 | - | 109.7％ | 96.3％ |
| Example 21 | α-Al2O3 0.6 16 | Pyrogenic Al2O3 0.013 1.7 | Aluminum nitrate 7.2 | - | 93.5％ | 93.8％ |
| Example 22 | α-Al2O3 0.8 16 | Pyrogenic Al2O3 0.013 1.7 | Succinic acid 1.0 | Boehmite 2 | 154.9％ | 117.4％ |
| Example 23 | α-Al2O3 0.6 16 | Pyrogenic Al2O3 0.013 1.7 | Succinic acid 1.0 | Boehmite 2 | 108.4％ | 82.3％ |
| Example 24 | α-Al2O3 0.3 16 | Pyrogenic Al2O3 0.013 1.7 | Succinic acid 1.0 | Boehmite 2 | 71.4％ | 74.0％ |
| Example 25 | α-Al2O3 0.2 16 | Pyrogenic Al2O3 0.013 1.7 | Succinic acid 1.0 | Boehmite 2 | 100.0％ | 68.2％ |
TABLE 1 (continuation)
| (a) Alumina particles | (b) Pyrogenic aluminium oxide | (c) Polishing accelerator | (d) Alumina sol | Polishing speed | Micro-wave | |
| Seed particle size content Class (. mu.m) (wt%) | Seed particle size content Class (. mu.m) (wt%) | Seed content Class (wt%) | Seed content Class (wt%) | |||
| Example 26 | α-Al2O3 0.6 16 | Pyrogenic Al2O3 0.013 1.7 | Succinic acid 1.0 | Boehmite 10 | 106.8％ | 62.6％ |
| Example 27 | α-Al2O3 0.6 16 θ-Al2O3 4.0 1.7 | Pyrogenic Al2O3 0.013 1.7 | Succinic acid 1.0 | - | 118.2％ | 82.9％ |
| Example 28 | α-Al2O3 0.3 16 θ-Al2O3 4.0 4.4 | Pyrogenic Al2O3 0.013 1.7 | Succinic acid 1.0 | - | 132.4％ | 82.9％ |
| Example 29 | α-Al2O3 0.2 16 γ-Al2O3 0.05 1.7 | Pyrogenic Al2O3 0.013 1.7 | Succinic acid 1.0 | - | 117.2％ | 74.9％ |
| Example 30 | α-Al2O3 0.6 16 γ-Al2O3 0.05 4.4 | Pyrogenic Al2O3 0.013 1.7 | Succinic acid 1.0 | - | 122.4％ | 75.5％ |
| Comparative example 1 | α-Al2O3 0.6 16 | Pyrogenic Al2O3 0.013 1.7 | - | - | ＜5％ | - |
| Comparative example 2 | α-Al2O3 0.6 16 | Pyrogenic Al2O3 0.013 1.7 | - | Boehmite 2 | ＜5％ | - |
| Comparative example 3 | α-Al2O3 0.6 16 | Pyrogenic Al2O3 0.013 1.7 | - | Boehmite 10 | ＜5％ | - |
| Comparative example 4 | α-Al2O3 0.6 16 | Pyrogenic Al2O3 0.013 1.7 | Potassium periodate 1.0 | - | 71.0％ | 103.4％ |
| Comparative example 5 | α-Al2O3 0.8 16 | - | Succinic acid 1.0 | - | 151.0％ | 150.2％ |
| Comparative example 6 | α-Al2O3 0.6 16 | - | Succinic acid 1.0 | - | 100.0％ | 100.0％ |
| Comparative example 7 | Al2O3 0.3 16 | - | Succinic acid 1.0 | - | 63.0％ | 89.6％ |
| Comparative example 8 | α-Al2O3 0.2 16 | - | Succinic acid 1.0 | - | 82.6％ | 87.4％ |
| Comparative example 9 | α-Al2O3 0.6 17 | - | Succinic acid 1.0 | - | 102.0％ | 99.7％ |
| Comparative example 10 | α-Al2O3 0.6 21 | - | Succinic acid 1.0 | - | 104.1％ | 99.4％ |
| Comparative example 11 | α-Al2O3 0.8 16 | - | Succinic acid 1.0 | - | 106.7％ | 149.8％ |
| Comparative example 12 | α-Al2O3 0.6 16 | - | Malic acid 1.0 | - | 100.0％ | 123.7％ |
| Comparative example 13 | α-Al2O3 0.6 16 | - | Citric acid 1.0 | - | 100.0％ | 118.4％ |
| Comparative example 14 | α-Al2O3 0.6 16 | - | Glycolic acid 1.0 | - | 64.5％ | 111.2％ |
| Comparative example 15 | α-Al2O3 0.6 16 | - | Itaconic acid 1.0 | - | 100.0％ | 111.2％ |
| Comparative example 16 | α-Al2O3 0.6 16 | - | Maleic acid 1.0 | - | 112.9％ | 112.1％ |
TABLE 1 (continuation)
| (a) Alumina particles | (b) Pyrogenic aluminium oxide | (c) Polishing accelerator | (d) Alumina sol | Polishing speed | Micro-wave | |
| Seed particle size content Class (. mu.m) (wt%) | Seed particle size content Class (. mu.m) (wt%) | Seed content Class (wt%) | Seed content Class (wt%) | |||
| Comparative example 17 | α-Al2O3 0.6 16 | - | Nicotinic acid 1.0 | - | 93.5％ | 115.6％ |
| Comparative example 18 | α-Al2O3 0.6 16 | - | Lactic acid 1.0 | - | 93.5％ | 116.2％ |
| Comparative example 19 | α-Al2O3 0.6 16 | - | Tartaric acid 1.0 | - | 100.0％ | 107.8％ |
| Comparative example 20 | α-Al2O3 0.6 16 | - | Aluminum nitrate 7.2 | - | 83.9％ | 105.0％ |
| Comparative example 21 | α-Al2O3 0.6 16 | - | Potassium periodate 1.0 | - | 61.3％ | 120.9％ |
| Comparative example 22 | α-Al2O3 0.6 16 | - | Succinic acid 1.0 | Boehmite 2 | 76.6％ | 99.2％ |
| Comparative example 23 | α-Al2O3 0.6 16 | - | Succinic acid 1.0 | Boehmite 10 | 66.0％ | 85.9％ |
| Comparative example 24 | - | Pyrogenic Al2O3 0.013 4.4 | Succinic acid 1.0 | - | 12.5％ | 92.3％ |
| Comparative example 25 | - | Pyrogenic Al2O3 0.013 17 | Succinic acid 1.0 | - | 10.0％ | 70.7％ |
| Comparative example 26 | - | Pyrogenic Al2O3 0.013 24 | Succinic acid 1.0 | - | 10.0％ | 67.2％ |
| Comparative example 27 | - | Pyrogenic Al2O3 0.013 16 | Succinic acid 1.0 | Boehmite 2 | 10.0％ | 72.3％ |
| Comparative example 28 | - | Pyrogenic Al2O3 0.013 16 | Succinic acid 1.0 | Boehmite 10 | 10.0％ | 69.1％ |
| Comparative example 29 | α-Al2O3 0.6 16 | Pyrogenic SiO2 0.03 1.7 | Succinic acid 1.0 | - | 98.9％ | 94.8％ |
| Comparative example 30 | α-Al2O3 0.6 16 | Pyrogenic SiO2 0.03 4.4 | Succinic acid 1.0 | - | 95.6％ | 104.5％ |
| Comparative example 31 | α-Al2O3 0.6 16 | Pyrogenic SiO2 0.02 1.7 | Succinic acid 1.0 | - | 100.0％ | 91.1％ |
| Comparative example 32 | α-Al2O3 0.6 16 | Pyrogenic SiO2 0.02 4.4 | Succinic acid 1.0 | - | 97.8％ | 90.3％ |
| Comparative example 33 | α-Al2O3 0.6 16 | Colloidal SiO2 0.035 4.4 | Succinic acid 1.0 | - | 98.9％ | 90.7％ |
| Comparative example 34 | α-Al2O3 0.6 16 | TiO2(anatase) 0.0061.7 | Succinic acid 1.0 | - | 71.7％ | - |
| Comparative example 35 | α-Al2O3 0.6 16 | TiO2(anatase) 0.0064.4 | Succinic acid 1.0 | - | 57.8％ | - |
| Comparative example 36 | α-Al2O3 0.6 16 | TiO2(rutile) 0.0351.7 | Succinic acid 1.0 | - | 86.7％ | - |
| Comparative example 37 | α-Al2O3 0.6 16 | TiO2(rutile) 0.0354.4 | Succinic acid 1.0 | - | 77.8％ | - |
TABLE 1 (continuation)
| (a) Alumina particles | (b) Pyrogenic aluminium oxide | (c) Polishing accelerator | (d) Alumina sol | Polishing speed | Micro-wave | |
| Seed particle size content Class (. mu.m) (wt%) | Seed particle size content Class (. mu.m) (wt%) | Seed content Class (wt%) | Seed content Class (wt%) | |||
| Comparative example 38 | α-Al2O3 0.6 16 | ZrO2 0.5 1.7 | Succinic acid 1.0 | - | 90.0％ | 101.6％ |
| Comparative example 39 | α-Al2O3 0.6 16 | ZrSiO4 1.0 1.7 | Succinic acid 1.0 | - | 50.0％ | - |
| Comparative example 40 | α-Al2O3 0.6 16 | CeO2 1.0 1.7 | Succinic acid 1.0 | - | 89.5％ | - |
| Comparative example 41 | α-Al2O3 0.6 16 | α-Fe2O3 0.14 1.7 | Succinic acid 1.0 | - | 100.0％ | 96.1％ |
| Comparative example 42 | α-Al2O3 0.6 16 | α-Fe2O3 0.14 2.6 | Succinic acid 1.0 | - | 92.5％ | 91.6％ |
| Comparative example 43 | α-Al2O3 0.6 16 | α-Fe2O3 0.55 1.7 | Succinic acid 1.0 | - | 75.0％ | - |
| Comparative example 44 | α-Al2O3 0.6 16 | α-Fe2O3 0.55 2.6 | Succinic acid 1.0 | - | 67.5％ | - |
Incidentally, in Table 1, the particle diameter of the alumina particles is shown as an average particle diameter, which is measured using a laser diffraction and scattering type particle size measuring instrument (LS-230 manufactured by Coulter), and the particle diameter of the fumed alumina is shown as an average primary particle diameter, which is measured from the specific surface area measured by the BET method.
As shown in Table 1, the results of examples 1 to 30 were good in any of the polishing rate and the microwaviness. Furthermore, examples 22-26 are particularly good in terms of microwaviness due to the presence of the alumina sol. In contrast, comparative examples 1 to 44 were not good in at least one of the polishing rate and the microwaviness.
The present embodiments and implementations are to be considered as illustrative and not restrictive, and the invention is not to be limited to the details given herein, but may be modified within the scope and equivalents of the appended claims.
Claims (14)
1. A polishing composition, comprising:
alumina particles containing α -alumina as a main component;
fumed alumina;
a polishing accelerator containing at least one component selected from the group consisting of organic acids, inorganic acids, and salts of these acids; and
and (3) water.
2. The polishing composition of claim 1, wherein the alumina particles have an average particle size of no more than 2.0 μ ι η.
3. The polishing composition of claim 1, wherein the alumina particles are present in the polishing composition in an amount of 0.01 wt.% to 40 wt.%, including 0.01 wt.% and 40 wt.%.
4. The polishing composition of claim 1, wherein the α -conversion is not less than 50% in the crystalline form that comprises the alumina particles.
5. The polishing composition of claim 1, wherein the fumed alumina has an average primary particle size of 0.005 to 0.5 μm, including 0.005 μm and 0.5 μm.
6. The polishing composition of claim 1, wherein the fumed alumina is present in the polishing composition in an amount of not greater than 50 wt.%.
7. The polishing composition of claim 1, wherein the polishing accelerator comprises at least one component selected from the group consisting of citric acid, maleic anhydride, malic acid, glycolic acid, succinic acid, itaconic acid, malonic acid, iminodiacetic acid, gluconic acid, lactic acid, mandelic acid, tartaric acid, crotonic acid, nicotinic acid, acetic acid, thiomalic acid, formic acid, oxalic acid, carboxyethylthiosuccinic acid, aluminum nitrate, and iron nitrate.
8. The polishing composition according to claim 1, wherein the polishing accelerator contains at least one component selected from the group consisting of citric acid, maleic acid, glycolic acid, succinic acid, itaconic acid, iminodiacetic acid, and carboxyethylthiosuccinic acid.
9. The polishing composition of claim 1, wherein the polishing accelerator is present in the polishing composition in an amount of 0.01 wt.% to 10 wt.%, including 0.01 wt.% and 10 wt.%.
10. The polishing composition of claim 1, comprising an alumina sol.
11. The polishing composition of claim 10, wherein the alumina sol contains at least one member selected from the group consisting of hydrated alumina and aluminum hydroxide dispersed in a colloidal state in an acidic aqueous solution.
12. The polishing composition of claim 11, wherein the hydrated alumina is boehmite or pseudoboehmite.
13. The polishing composition according to any one of claims 1 to 12, wherein the polishing composition is used for polishing a magnetic disk substrate.
14. A method of polishing a magnetic disk substrate,
preparing the polishing composition of any one of claims 1-12;
the surface of the substrate is polished with the polishing composition.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2003132312 | 2003-05-09 | ||
| JP2003132312A JP4202183B2 (en) | 2003-05-09 | 2003-05-09 | Polishing composition |
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| CN1550532A true CN1550532A (en) | 2004-12-01 |
| CN100392035C CN100392035C (en) | 2008-06-04 |
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| CNB2004100435122A Expired - Fee Related CN100392035C (en) | 2003-05-09 | 2004-05-09 | Polishing composition |
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|---|---|
| JP (1) | JP4202183B2 (en) |
| CN (1) | CN100392035C (en) |
| GB (1) | GB2401610B (en) |
| MY (1) | MY144061A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103937414A (en) * | 2014-04-29 | 2014-07-23 | 杰明纳微电子股份有限公司 | Fine polishing liquid for hard disk substrate of computer |
| CN104245230A (en) * | 2012-03-19 | 2014-12-24 | 福吉米株式会社 | Polishing material for lapping and method for manufacturing substrate using same |
| CN106366939A (en) * | 2016-08-30 | 2017-02-01 | 东兴华鸿光学科技有限公司 | Polishing solution for optics lens |
| CN107735478A (en) * | 2015-06-26 | 2018-02-23 | 福吉米株式会社 | Composition for polishing |
| CN113817410A (en) * | 2020-06-18 | 2021-12-21 | 福吉米株式会社 | Concentrate of polishing composition and polishing method using same |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4718164B2 (en) * | 2004-11-26 | 2011-07-06 | 株式会社フジミインコーポレーテッド | Polishing composition and polishing method using the same |
| TW200712187A (en) * | 2005-08-31 | 2007-04-01 | Fujimi Inc | Polishing composition and polishing method |
| US7922926B2 (en) * | 2008-01-08 | 2011-04-12 | Cabot Microelectronics Corporation | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
| JP5536433B2 (en) * | 2009-12-11 | 2014-07-02 | 花王株式会社 | Polishing liquid composition for hard disk substrate |
| JP2013052503A (en) * | 2011-05-20 | 2013-03-21 | Ohara Inc | Method for manufacturing optical part |
| JP5755054B2 (en) * | 2011-05-20 | 2015-07-29 | 株式会社オハラ | Substrate manufacturing method |
| US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
| JP6325441B2 (en) * | 2012-07-17 | 2018-05-16 | 株式会社フジミインコーポレーテッド | Composition for polishing alloy material and method for producing alloy material using the same |
| TW202128943A (en) | 2019-12-20 | 2021-08-01 | 日商Jsr 股份有限公司 | Composition for chemical mechanical polishing, chemical mechanical polishing method, and method for manufacturing particles for chemical mechanical polishing |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3106339B2 (en) * | 1994-02-04 | 2000-11-06 | 株式会社フジミインコーポレーテッド | Polishing composition |
| US5693239A (en) * | 1995-10-10 | 1997-12-02 | Rodel, Inc. | Polishing slurries comprising two abrasive components and methods for their use |
| US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
| US6007592A (en) * | 1996-11-14 | 1999-12-28 | Nissan Chemical Industries, Ltd. | Polishing composition for aluminum disk and polishing process therewith |
| US6475407B2 (en) * | 1998-05-19 | 2002-11-05 | Showa Denko K.K. | Composition for polishing metal on semiconductor wafer and method of using same |
| JP3998813B2 (en) * | 1998-06-15 | 2007-10-31 | 株式会社フジミインコーポレーテッド | Polishing composition |
| WO2001023485A1 (en) * | 1999-09-30 | 2001-04-05 | Showa Denko K. K. | Polishing composition and method |
| US6379406B1 (en) * | 1999-12-14 | 2002-04-30 | Rodel Holdings, Inc. | Polishing compositions for semiconductor substrates |
| US6527622B1 (en) * | 2002-01-22 | 2003-03-04 | Cabot Microelectronics Corporation | CMP method for noble metals |
-
2003
- 2003-05-09 JP JP2003132312A patent/JP4202183B2/en not_active Expired - Lifetime
-
2004
- 2004-05-07 GB GB0410214A patent/GB2401610B/en not_active Expired - Fee Related
- 2004-05-07 MY MYPI20041724 patent/MY144061A/en unknown
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104245230A (en) * | 2012-03-19 | 2014-12-24 | 福吉米株式会社 | Polishing material for lapping and method for manufacturing substrate using same |
| TWI547552B (en) * | 2012-03-19 | 2016-09-01 | 福吉米股份有限公司 | Abrasive for lapping process and substrate production method using the same |
| CN104245230B (en) * | 2012-03-19 | 2017-10-27 | 福吉米株式会社 | Polishing grinding-material and the manufacture method using its substrate |
| CN103937414A (en) * | 2014-04-29 | 2014-07-23 | 杰明纳微电子股份有限公司 | Fine polishing liquid for hard disk substrate of computer |
| CN103937414B (en) * | 2014-04-29 | 2018-03-02 | 杰明纳微电子股份有限公司 | A kind of precise polishing solution of hard disc of computer disk substrate |
| CN107735478A (en) * | 2015-06-26 | 2018-02-23 | 福吉米株式会社 | Composition for polishing |
| CN106366939A (en) * | 2016-08-30 | 2017-02-01 | 东兴华鸿光学科技有限公司 | Polishing solution for optics lens |
| CN113817410A (en) * | 2020-06-18 | 2021-12-21 | 福吉米株式会社 | Concentrate of polishing composition and polishing method using same |
| CN113817410B (en) * | 2020-06-18 | 2024-05-10 | 福吉米株式会社 | Concentrate of polishing composition and polishing method using same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4202183B2 (en) | 2008-12-24 |
| CN100392035C (en) | 2008-06-04 |
| GB0410214D0 (en) | 2004-06-09 |
| GB2401610B (en) | 2007-12-27 |
| GB2401610A (en) | 2004-11-17 |
| MY144061A (en) | 2011-08-15 |
| JP2004331886A (en) | 2004-11-25 |
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