CN1542953A - CTE matched application specific heat sink assembly - Google Patents

CTE matched application specific heat sink assembly Download PDF

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Publication number
CN1542953A
CN1542953A CNA2004100004189A CN200410000418A CN1542953A CN 1542953 A CN1542953 A CN 1542953A CN A2004100004189 A CNA2004100004189 A CN A2004100004189A CN 200410000418 A CN200410000418 A CN 200410000418A CN 1542953 A CN1542953 A CN 1542953A
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China
Prior art keywords
heat radiation
thermal
radiation matrix
expansion
heat
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Pending
Application number
CNA2004100004189A
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Chinese (zh)
Inventor
马文・格伦・黄
马文·格伦·黄
方
阿瑟·方
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Agilent Technologies Inc
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Agilent Technologies Inc
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Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of CN1542953A publication Critical patent/CN1542953A/en
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Abstract

An application specific heat sink assembly for dissipating heat from one or more electronic components is presented with a heat-dissipating substrate selected for one or more of its size, shape, mass, cost, thermal conductivity, or environmental resistance properties; and one or more heat-dissipating studs. Each heat-dissipating stud may be attached to the heat-dissipating substrate such that an electronic component may be attached to each heat-dissipating stud with the heat-dissipating stud providing CTE transition between the heat-dissipating substrate and the electronic component to be cooled. At least one of the heat-dissipating studs may have an upper layer with a CTE similar to the electronic component's CTE and one or more intermediate layers between the upper layer and the heat-dissipating substrate to provide CTE stepping between the CTE of the heat-dissipating substrate and the CTE of the upper layer of the heat-dissipating stud.

Description

The heat radiator dedicated assembly of matched coefficients of thermal expansion
Technical field
The present invention relates to radiator, in particular to heat radiator dedicated and manufacture method being used for from one or more electronic element radiatings.
Background technology
Electronic component such as integrated circuit or printed circuit board (PCB) is just becoming more and more commonly used in various devices.For example, CPU, interface and figure and main memory circuit generally include some integrated circuits.When normal operation, many electronic components such as integrated circuit generate a large amount of heat.If the heat that produces when these and other device operations does not pass away, electronic component or other devices near them may be overheated so, cause the reduction to damage of elements or element function.
For fear of by overheated these problems that cause, often and electronic component use radiator or other radiating elements to dispel the heat together.The heat radiation of radiator must be required and other factor balances.If thermal coefficient of expansion of radiator (CTE) and electronic component difference are too big, radiator may split, damages or come off from the electronic component that they were installed to so.And many radiator materials are heavier relatively.If the electronic component that radiator was installed to is vibrated or impacts, the weight that is installed to the radiator on the electronic component so can make radiator split, damage or come off from the electronic component that it was installed to.
Frequently, a plurality of electronic components on printed circuit board (PCB), multi-chip module or the electronic system need heat radiation.For optimization system cost, weight, size and other features, it will be useful that a plurality of elements can utilize single radiating element.But the different die on the printed circuit assembly or in the multi-chip module may have different thermal coefficient of expansions or heat radiation requirement.It will be useful that a kind of various different radiating elements that require that can adapt to the device of a plurality of needs heat radiations are provided.
Usually in microelectronics and microwave electron element, the heat radiation of enhancing needs and can use heat pipe to satisfy easily, and described heat pipe can provide 10 to 30 times or the capacity of heat transmission that more manys times than planar heat spreader spare.But a kind of like this structure may be owing to have big CTE with tube core, multi-chip module, printed circuit assembly or other elements of being cooled and do not match and produce excessive mechanical stress.Therefore, have more effective CTE coupling or alternation between the radiator of the thermal conductivity that needs in the industry and heat pipe and the element that is cooled.
Some materials provide good thermal conductivity, but are difficult to shaping, costliness, weigh or other are arranged to the undesired feature of specific heat radiation situation.Therefore, in industry, have a kind of needs, promptly can optimize heat radiation, weight, cost, machinability and other features of radiating element and in electronic building brick a plurality of tube cores or element single radiating element is provided.
Summary of the invention
A kind of apparatus and method that are used to optimize heat radiation, CTE coupling, weight, cost, machinability or other features of radiating element.
A kind of being used for has the heat radiation matrix from the special-purpose radiating subassembly of one or more electronic element radiatings, and one or more thermal columns, wherein said heat radiation matrix is according to one or more selection the in its size, shape, quality, cost, thermal conduction characteristic and the environment resistance.Each thermal column can be installed to heat radiation make electronic component can be installed on each thermal column on the matrix and thermal column provides the heat radiation matrix and the electronic component that will cool off between the CTE transition.At least one thermal column can have upper strata and the intermediate layer between upper strata and heat radiation matrix, and there is the CTE similar with the CTE of electronic component on described upper strata, and the CTE in described intermediate layer is between the CTE on the upper strata of heat radiation matrix and thermal column.
A kind of method is used to make heat radiator dedicated from one or more electronic element radiatings, and it can comprise: select or form heat radiation matrix or heat pipe; Form one or more thermal columns, make each thermal column can shaping and sizing and and the electronic device that will cool off coupling; And each thermal column is installed on the matrix.The electronic device that cools off can be installed on each thermal column.Thermal column can be made up of the material more than one deck, with the coupling of the CTE alternation between the electronic component that heat radiation matrix or heat pipe is provided and will cools off.
Description of drawings
By with reference in conjunction with the accompanying drawings following detailed description, will better be understood and become very clear the more complete understanding of the present invention and many advantages of following, in the accompanying drawing similarly label represent same or analogous element, wherein:
Fig. 1 illustrates the radiating element according to first embodiment of the invention;
Fig. 2 illustrates the radiating element according to second embodiment of the invention;
Fig. 3 illustrates the radiating element according to third embodiment of the invention;
Fig. 4 illustrates the radiating element flow chart of manufacturing according to first embodiment of the invention;
Fig. 5 illustrates the radiating element flow chart of manufacturing according to second embodiment of the invention;
Fig. 6 illustrates the radiating element flow chart of manufacturing according to third embodiment of the invention;
The integrated circuit (IC)-components that Fig. 7 illustrates according to fourth embodiment of the invention is encapsulated in encapsulation plan view from above before;
Fig. 8 illustrates the sectional view of the integrated circuit (IC)-components 8-8 along the line of Fig. 7;
Fig. 9 illustrates according to the radiating element of fifth embodiment of the invention from a plurality of element radiatings;
Figure 10 illustrates the radiating element flow chart of manufacturing the 5th and the 6th embodiment according to the present invention;
Figure 11 illustrates the sectional view of a plurality of integrated circuits before encapsulation that is installed to according to a sixth embodiment of the invention on the radiating element;
Figure 12 illustrates according to the radiating element of seventh embodiment of the invention from element radiating;
Figure 13 illustrate according to the eighth embodiment of the present invention be installed on the radiating element a plurality of integrated circuits the encapsulation before sectional view; With
Figure 14 illustrates the radiating element flow chart of manufacturing according to eighth embodiment of the invention;
Embodiment
As for the diagram purpose accompanying drawing shown in, the present invention relates to provide the technology of radiating element, the various features of optimised devices selectively wherein, for example thermal conductivity, accuracy tolerance, with the CTE coupling of wanting cooling-part, environment resistance, little quality, good cementability, cost and machinability or the like.Available have the radiator of multiple material to finish the various features of optimizing radiating element, creates a kind of heat radiator dedicated structure, can satisfy different requirements in different occasions more easily than single heat spreader structures.
See accompanying drawing now, Fig. 1 illustrates the radiating element according to first embodiment of the invention.Heat radiation matrix 110 is provided.Heat radiation matrix 110 can be selected from any known radiator material, alloy or its combination, for example carbonization sial, copper, aluminium, nanocarbon/metal composite material, pottery or other known radiator materials.Only for example, because its heat conductivility and little weight can be selected AlSiC.Can form thermal column 120 by punching press, machine work, etching or laser cutting are carried out in any known radiator material, alloy or its combination, for example copper, tungsten, molybdenum, aluminium, copper/molybdenum/copper or other known radiator materials.
Can select thermal column 120 that it is had and device (integrated circuit (IC) chip, integrated circuit encapsulation, integrated circuit modules and printed circuit board (PCB) or the like) relative more approaching CTE (thermal coefficient of expansion), thermal column 120 will be installed on the described device.Shown in the flow chart among Fig. 4, by any known installation method, cold diffusion under for example brazing, soft soldering (soldering), bonding, interference fit, screw, rivet, melting welding, the high pressure, diffusion connects or heat-conducting metal is bonding, can thermal column 120 be installed on the surface 180 of heat radiation matrix 110 in precalculated position 130.Thermal column 120 comes Accurate Shaping by machine work, punching press, etching or laser cutting and is installed on the heat radiation matrix 110 in precalculated position 130.
Since of the present invention heat radiator dedicated be multiduty, so can be ready to the various heat radiation matrixes 110 of various materials and size.Can be ready to the various thermal columns 120 of various materials and size.So it is that concrete cooling application is selected matrix 110 and post 120 that the producer of the device that will cool off (example embodiment shown in Fig. 7 to 8) can come according to the needs of feature, cost, little quality, good thermal conductivity and accuracy tolerance or the like.As shown in Figure 4, in the case, in the step 410, the producer can select matrix 110 by the requirement of concrete application, in the step 420, selects post 120 also to select suitable installation method, with when minimizing the radiator cost by optimizing application radiator characteristic.In the step 430, the device that cool off can be installed on the post.It should be noted that, before post 120 is installed on the matrix 110, just post 120 can be installed on the device that will cool off.
Perhaps, the producer can be ready to the various heat radiation matrixes 110 of different materials and size or order from supplier.In case the heat radiation matrix 110 that has been a concrete application choice in step 410 just can be made the thermal column 120 of customization by specific size and thermal conductivity requirement or the like.Post 120 in step 420, can be installed by any installation method that is appropriate to this application after making well.It is not so good that this embodiment allows to form material, alloy or the compound machinability of matrix 110, but have other needed radiator characteristics, for example good thermal conductivity, cheap, little quality or the like, simultaneously post 120 can provide other characteristics, for example and the CTE that improves between the device that will cool off coupling, can be worked into more accurately and the size of the device matching that will cool off or the like.Post also can be used to realize mate with the relative CTE of each tube core separately.It should be noted that does not generally need accurate CTE coupling, disclosed as the U.S. Patent No. 5,886,407 (U.S.Pat.No.5,886,407, people such as Polese) that comprises by reference in this manual, and it is just enough to have an approaching relatively CTE.
Fig. 2 shows the radiating element according to second embodiment of the invention.In Fig. 2, heat radiation matrix 210 is provided with alignment cavity 230 and is used for aiming at and installing thermal column 220.Available any known method forms heat radiation matrix 210, for example machine work or punching press.Chamber 230 can be formed in the matrix 210 by machine work or pressure-sizing/punching press.Shown in the flow chart of Fig. 5, in case in step 510, selected matrix, just can be in step 520 by brazing, soft soldering, bonding, diffusion connects, cold diffusion under the high pressure, heat-conducting metal is bonding or other are known installation method are installed in post 220 in the alignment cavity 230.In step 530, can be by comprising the tube core installation method of any standard that epoxy (epoxy) or eutectic (eutectic) tube core are installed, the device (not shown) that will cool off is installed on the post 220.This embodiment can make post 220 aim at more accurately on matrix 210.
Fig. 3 shows the radiating element according to third embodiment of the invention.In Fig. 3, make heat radiation matrix 310 by the material of metal, alloy or compound with preliminary dimension according to the accurate requirement of concrete cooling application.As shown in Figure 6, select in step 610 after the matrix, the layer is made up of the selected material that forms thermal column 320 in step 620 390 is installed by any known installation method, for example brazing, soft soldering, bonding, diffusion connection or vacuum hotpressing or the like.After the mounting layer 390, in step 630, form the post 320 of the preliminary dimension of the device matching that has and will cool off by machine work, laser cutting, chemical etching or other already known processes 330 places, precalculated position on the end face of layer 390.In layer 390, form after the thermal column 320, in step 640, the device that cool off can be installed.Thermal column is shaped as with the electronic device that will cool off and cooperates.
With reference now to Fig. 7 and 8, the application of above-mentioned radiating subassembly element under integrated circuit (IC)-components cooling situation described.Integrated circuit (IC)-components 741 comprises the electrical interconnection supporting structure of being made up of one or more layers relatively cheap dielectric material 742, and described dielectric material for example is polyamide or other polymeric dielectrics, perhaps has the epoxy material of high relatively CTE.Supporting structure 742 supporting as preceding in conjunction with matrix 110,210 and 310 and Fig. 1 to 8 described, the heat radiation matrix of selecting for dedicated nature 743.
The thermal column that stretches out of upper surface 746 745 supporting microchip or tube cores 744 from heat radiation matrix 743.Thermal column 745 and heat radiation matrix 743 are separately made, and subsequently by brazing, electric resistance welding, ultra-sonic welded, compacting be cold diffusion under the high pressure, soft soldering, bonding, interference fit, screw, rivet, diffusion connects or use adhesive linkage 751 to be installed on the heat radiation matrix 743, described adhesive linkage 751 is made up of the thin adhesives that hot property requires to determine heat conduction adhesives or other thickness.A series of connecting lines 747 are connected to the contact point on the tube core 744 on the surface 749 of supporting structure 742 or the metallisation (metalization) 748 of patterning in the body.Metallisation is connected to from integrated circuit (IC)-components 741 outwardly directed a plurality of guide cards 750.Heat radiation matrix 743 variable-sizes/shape is so that can form unshowned part encapsulating structure.
It should be noted that in order to reduce the heat radiation cost in the integrated circuit (IC)-components, can be from various general materials, size and dimension according to its heat dissipating, little quality, environmental condition resistance, price or the like matrix 743 of selecting to dispel the heat.In order to disperse and reduce the mechanical stress at the contact place of device different elements, select to be used for the material of supporting structure 742 to have the CTE between heat radiation matrix 743 and metallisation 748.From various materials, select thermal column 745 so that the CTE between heat radiation matrix 743 and integrated circuit lead 744 to be provided, have other required specific features simultaneously, for example custom fit in the CTE of tube core, adjust size, environment resistance, price and quality or the like.
The present invention can allow the end user accurately to select the various features of radiator by concrete application.The main body of radiator or matrix can be general size, shape and materials optimizing the selected feature of radiator, but for example thermal conductivity, little quality, cheap material, cheap manufacturing process, environment resistance and cementability or the like.Simultaneously can select to connect the material, size and dimension of surface or bonding jumper (slug) or by specifically should being used for customization, optimizing selected feature, but for example and machinability of the CTE that improves between the device that will cool off coupling cementability and accuracy tolerance or the like.
The dedicated shape that it should be noted that thermal column can form before or after being installed on the heat radiation matrix.And thermal column can be installed on the device that will cool off before or after being installed on the heat radiation matrix.And although Fig. 7 to 8 illustrates the integrated circuit (IC)-components 744 that is cooled, the present invention can be applicable to printed circuit board (PCB), multi-chip module and pre-packaged device or the like equally and can not depart from basic conception of the present invention.
Embodiment one to four also can be applicable to such situation, wherein can utilize the heat radiation matrix to cool off element in a plurality of integrated circuits, tube core, printed circuit assembly or the multi-chip module.Basically, a plurality of electronic components in the assembly can utilize the single heat radiation matrix with different thermal columns, and described thermal column places between each electronic component that will cool off and this heat radiation matrix.
By only being the diagram of example, Fig. 9 shows the heat abstractor according to fifth embodiment of the invention, and wherein first thermal column 920 and second thermal column 930 are installed on the heat radiation matrix 910.From similar or different materials, select or form thermal column 920 and 930, for example be matched with the CTE of first and second tube cores or electronic building brick (not shown) to obtain required special characteristic, such as herein about Fig. 1 to 8 instruction.
As shown in figure 10, can make heat abstractor 900 like this, promptly as instructing, in step 1010 about Fig. 1 to 8, from the various general matrix of different size, shape and material, select, or form matrix 910 from the specific heat sink material of selecting for specific features.In step 1020 and 1040, thermal column 920 and 930 can be formed by similar or different materials and be installed on the matrix 910, such as among Fig. 1 to 8 instruction ground for concrete use required feature select as described in material.Electronic component (not shown in Fig. 9) is installed on thermal column 920 and 930.These steps can form by any order, and in matrix 910 or post 920 and 930 any one or can be existing general element all, and select and assemble or concrete application is customized for concrete application.
It should be noted that post 920 can be formed by similar or different materials with similar or diverse ways with 930, this depends on the required special characteristic and the requirement of electronic component that will be installed on each post.Between the zone of heat radiation matrix 910 and single living thermal device or integrated circuit or multi-chip module, the thermal column more than two can be installed.And, on heat radiation upper surface of matrix and lower surface, all thermal column can be installed, only limited by other devices that have heat radiation to require in the degree of approach, heat radiation requirement, size, weight and the assembly.
Figure 11 illustrates the electronic building brick 1141 that comprises electronic interconnection supporting structure 1142, and electronic interconnection supporting structure 1142 is made up of one or more layers dielectric material, for example polyamide or other polymeric dielectrics or epoxy material.Supporting structure 1142 is installed on the heat radiation matrix 1143, and heat radiation matrix 1143 is made up of the heat sink material of selecting for specialized property and feature, as described about Fig. 1 to 8.
Thermal column 1145 and 1155 supportings that two or more microchips or tube core 1144 and 1154 are stretched out by the upper surface from heat radiation matrix 1143 respectively.Thermal column 1145 and 1155 can separate manufacturing with heat radiation matrix 1143, and be that cold diffusion under the high pressure, soft soldering, bonding, interference fit, screw, rivet, diffusion connection or adhesive linkage (not shown) are installed on the heat radiation matrix 1143 by brazing, electric resistance welding, ultra-sonic welded, compacting, described adhesive linkage requires determined thin adhesives to be made up of heat conduction adhesives or other thickness by hot property.A series of connecting lines 1147 are connected to the contact point on tube core 1144 and 1154 on the surface of supporting structure 1142 or in the body on the coating metal layer or multilayer 1148 of patterning.Metallisation is connected to from electronic building brick or multi-chip module 1141 outwardly directed a plurality of guide cards 1150.Heat radiation matrix 1143 variable-sizes/shape forms part encapsulating structure (not shown) so that it can be electronic building brick.
In order to reduce the cost of electronic building brick or multi-chip module 1141, can be from various general materials, size and dimension according to its thermal conductivity, little quality, environment resistance, price or the like matrix 1143 of selecting to dispel the heat.In order to disperse and reduce the mechanical stress at the contact place of assembly different elements, select to be used for the material of supporting structure 1142 to have the CTE between heat radiation matrix 1143 and coating metal layer 1148.Can from various materials, select thermal column 1145 and 1155 so that the CTE between heat radiation matrix 1143 and tube core 1144 and 1154 to be provided, have other required specific features simultaneously, for example custom fit in the CTE of tube core, adjust size, environment resistance, price, quality and machinability or the like.
With reference now to Figure 12,, shows a kind of effective heat radiation matrix 1210.The radiator of the planar substrates that matrix 1210 can be made up of effective Heat Conduction Material, band fan or be the heat pipe on plane substantially.Also can be by the thermal column of forming by heat dissipating layer 1,230 1245, heat dissipating layer 1230 has and the electronic component or the relative coupling of CTE preferably of tube core that will be installed on it.Thermal column 1245 also can comprise intermediate layer 1220, can select it that CTE between the CTE of the CTE of layer 1230 and heat radiation matrix 1210 is provided.
If it is too big to give birth to the CTE difference of thermoelectric elements and matrix 1210, not matching of CTE may make assembly that excessive mechanical stress is arranged during thermal cycle.Therefore, post 1245 can be by two-layer or more multi-layered the composition, and it has between the CTE of the matrix 1210 and the device that will cool off the CTE of alternation gradually, thereby reduces because the connection stress that CTE does not match and causes.Present embodiment also can use in assembly, wherein cools off a plurality of electronic devices, element, multi-chip module or similar assembly with single heat radiation matrix or heat pipe.Available as above-mentionedly form intermediate layer 1220 and heat dissipating layer 1230 about any method that Fig. 1 to 6 discussed, and they are installed and are installed to matrix 1210 each other and the electronic component that will cool off on.
The CTE that it should be noted that at heat radiation matrix and the device that will cool off has very big difference or requirement minimize because under the situation of the mechanical stress that thermal cycle causes, and post 1245 can be by more than the two-layer alternation that more relaxes with CTE between the device that heat radiation matrix 1210 is provided and will cools off of forming.
Figure 13 illustrates a kind of sectional view of electronic building brick 1341, and it comprises electronic interconnection supporting structure 1342, and this structure is made up of one or more layers dielectric material, for example polyamide or other polymeric dielectrics or epoxy material.Supporting structure 1342 is installed on the heat radiation matrix 1343.Heat radiation matrix 1143 can be the characteristic and the feature of concrete application and selects, as described about Fig. 1 to 12, particularly, can comprise the radiator of any known radiator material, band fin (fin) or the heat pipe structure of forming by any known heat sink material and device.Depend on application, heat radiation matrix 1343 can be the existing general element of selecting for specialized property, and only as an example, but described characteristic for example is thermal conductivity, little quality, price, environment resistance and cementability or the like.
Thermal column 1345 and 1355 supportings that two or more microchips or tube core 1344 and 1354 are stretched out by the upper surface from heat radiation matrix 1343 respectively. Thermal column 1345 and 1355 can separate manufacturing with heat radiation matrix 1343, and be installed on the heat radiation matrix 1343 by cold diffusion or adhesive linkage (not shown) under brazing, electric resistance welding, ultra-sonic welded, compacting, soft soldering, bonding, interference fit, screw, rivet, diffusion connection, the high pressure, described adhesive linkage requires determined thin adhesives to be made up of heat conduction adhesives or other thickness by hot property.
A series of connecting lines 1347 are connected to the contact point on tube core 1344 and 1354 on the surface of supporting structure 1342 or the coating metal layer 1348 of patterning in the body.Metallisation is connected to from electronic building brick or multi-chip module 1341 outwardly directed a plurality of guide cards 1350.Heat radiation matrix 1343 can be electronic building brick and forms part encapsulating structure (not shown).
Post 1345 and 1355 can be made up of layer 1330 and 1335 respectively, with provide respectively with device 1344 and 1354 between relative CTE coupling.Depend on the device 1344 that will cool off and 1354 and heat radiation matrix 1342 between the CTE difference, post 1345 and 1355 can comprise intermediate layer 1320 and 1325 respectively, it can further provide milder alternation between the CTE of matrix 1343 and layer 1330 and 1335 the CTE, thereby reduces the mechanical stress on the assembly during the thermal cycle.Can be by forming post 1345 and 1355 referring to figs. 1 to 6 described any technology.Particularly, available as above-mentioned any method about Fig. 1 to 6 forms post 1345 and 1355.
The layer of post can be to different layers then respectively, and perhaps to then side by side forming and be installed on the matrix with one deck, this depends on that the concrete CTE of each mates requirement in element 1344 and 1354.Perhaps, can make matrix 1343 and also form initial CTE intermediate layer thereon.When the Application Design of having determined different elements 1344 and 1354 and position, can form the intermediate layer of post by chemical etching, laser cutting or other known methods, CTE matching layer 1330 between the intermediate layer can be formed and be installed with 1335 by similar or different materials subsequently, and this depends on the CTE coupling requirement of concrete application.
In order to reduce the cost of electronic building brick 1341, can be from various general materials, size and dimension according to its thermal conductivity, little quality, environment resistance, price or the like matrix 1343 of selecting to dispel the heat.In order to disperse and reduce the mechanical stress at the contact place of assembly different elements, supporting course 1342 can be the double-layer structure (not shown) that is similar to post 1345 and 1355.The layer of premature 1343 can be the same with the intermediate layer 1320 and 1325 of post 1345 and 1355, formed and formed in identical process by identical materials.This one deck can by chemical etching or other similar approach be formed into post 1345 and 1355 bottom 1320 and 1325 and the bottom of supporting structure 1342 in. Top layer 1330 and 1335 with rear pillar 1345 and 1355 can form and be installed on intermediate layer 1320 and 1325, and dielectric material can form and be installed on the supporting structure 1342 that is generated.It should be noted that these steps can be by different order execution with optimizing process and component efficiency.
Although disclose the preferred embodiments of the present invention for the purpose of illustration, it will be appreciated by those skilled in the art that various modifications, additional and substitute and all be fine, can't depart from scope of the present invention, and produce still embodiment of equal value within the scope of the appended claims.For example, general heat radiation matrix can also be the heat radiation matrix of band fin or other heat radiation physical features commonly used.

Claims (18)

1. a special-purpose radiating subassembly is used for from one or more electronic element radiatings, and described heat radiator dedicated comprises:
The heat radiation matrix is selected according to one or more following character: size, shape, quality, cost, thermal conductivity, environment resistance; With
One or more thermal columns; Wherein each thermal column is installed to and makes on the described heat radiation matrix that electronic component can be installed on each thermal column; Wherein at least one thermal column comprises upper strata and one or more intermediate layer between described upper strata and described heat radiation matrix, and described upper strata has the thermal coefficient of expansion similar with the thermal coefficient of expansion of electronic component; Wherein said intermediate layer has the thermal coefficient of expansion between the thermal coefficient of expansion of the thermal coefficient of expansion on described upper strata and described heat radiation matrix.
2. special-purpose radiating subassembly as claimed in claim 1, wherein said heat radiation matrix comprises the carbonization sial.
3. special-purpose radiating subassembly as claimed in claim 1, wherein said heat radiation matrix comprises the carbon metal alloy.
4. special-purpose radiating subassembly as claimed in claim 1, wherein said heat radiation matrix comprises pottery.
5. special-purpose radiating subassembly as claimed in claim 1, wherein said heat radiation matrix comprises fin.
6. special-purpose radiating subassembly as claimed in claim 1, wherein said heat radiation matrix comprises heat pipe.
7. special-purpose radiating subassembly as claimed in claim 1, wherein said heat radiation matrix comprises one or more chambeies on first surface, wherein be installed to described heat radiation matrix in described one or more chambeies of at least one thermal column on the described first surface of described heat radiation matrix, wherein said chamber provides the method for aiming at.
8. special-purpose radiating subassembly as claimed in claim 1, one or more in the wherein said thermal column form like this, promptly on the top surface of heat radiation matrix, form one deck, form one or more intermediate layers of described one or more posts subsequently from described layer with thermal coefficient of expansion close with the thermal coefficient of expansion of heat radiation matrix.
9. special-purpose radiating subassembly as claimed in claim 8, wherein said one or more thermal columns form by form one deck on one or more described intermediate layers; The described layer that wherein is formed on the described intermediate layer has the thermal coefficient of expansion similar with the thermal coefficient of expansion of wanting cooling electronic components.
10. special-purpose radiating subassembly as claimed in claim 9, wherein said one or more thermal columns form by machine work, laser cutting or chemical etching.
11. a method is used to make special-purpose radiating subassembly, described radiating subassembly provides heat radiation for one or more electronic components with predetermined coefficient of thermal expansion, and described method comprises:
Selection has the heat radiation matrix of predetermined coefficient of thermal expansion;
Form one or more thermal columns, wherein each thermal column shaping and sizing are to mate with the electronic device that will cool off, wherein said one or more thermal column comprises two-layer at least material, ground floor has and wants the close thermal coefficient of expansion of thermal coefficient of expansion of cooling electronic components, and the thermal coefficient of expansion of the second layer is between the thermal coefficient of expansion of the thermal coefficient of expansion of described heat radiation matrix and described ground floor; And
Described thermal column more than is installed on the precalculated position of described heat radiation matrix, and the described second layer that wherein will have the described thermal column of the thermal coefficient of expansion close with the thermal coefficient of expansion of described heat radiation matrix is installed towards described heat radiation matrix.
12. method as claimed in claim 11, wherein said heat radiation matrix comprises the carbonization sial.
13. method as claimed in claim 11, wherein said heat radiation matrix is selected according to one or more following character: but thermal conductivity, environment resistance, little quality, cheap price or cementability.
14. method as claimed in claim 11 also is included in the step that forms one or more chambeies in the top surface of described heat radiation matrix; Wherein one or more thermal columns are installed in the described one or more chambeies that are formed on the described heat radiation matrix.
15. method as claimed in claim 11, wherein said heat radiation matrix comprises heat pipe.
16. method as claimed in claim 15 also is included in the step that forms one or more chambeies in the top surface of described heat radiation matrix; Wherein one or more thermal columns are installed in the described one or more chambeies that are formed on the described heat radiation matrix.
17. method as claimed in claim 11, wherein said heat radiation matrix comprises fin.
18. method as claimed in claim 17 also is included in the step that forms one or more chambeies in the top surface of described heat radiation matrix; Wherein said one or more thermal column is installed in the described one or more chambeies that are formed on the described heat radiation matrix.
CNA2004100004189A 2003-04-30 2004-01-18 CTE matched application specific heat sink assembly Pending CN1542953A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103904046A (en) * 2012-10-18 2014-07-02 英飞凌科技奥地利有限公司 Passive component as thermal capacitance and heat sink

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4069498A (en) * 1976-11-03 1978-01-17 International Business Machines Corporation Studded heat exchanger for integrated circuit package
US4415025A (en) * 1981-08-10 1983-11-15 International Business Machines Corporation Thermal conduction element for semiconductor devices
JPS61240665A (en) * 1985-04-17 1986-10-25 Sanyo Electric Co Ltd Semiconductor device
US4788627A (en) * 1986-06-06 1988-11-29 Tektronix, Inc. Heat sink device using composite metal alloy
JPS63296361A (en) * 1987-05-28 1988-12-02 Hitachi Cable Ltd Semiconductor device
US5972737A (en) * 1993-04-14 1999-10-26 Frank J. Polese Heat-dissipating package for microcircuit devices and process for manufacture
US5886407A (en) * 1993-04-14 1999-03-23 Frank J. Polese Heat-dissipating package for microcircuit devices
US5397921A (en) * 1993-09-03 1995-03-14 Advanced Semiconductor Assembly Technology Tab grid array
JPH08111481A (en) * 1994-10-12 1996-04-30 Tokyo Tungsten Co Ltd Heat sink for semiconductor
US5604978A (en) * 1994-12-05 1997-02-25 International Business Machines Corporation Method for cooling of chips using a plurality of materials
EP0746022B1 (en) * 1995-05-30 1999-08-11 Motorola, Inc. Hybrid multi-chip module and method of fabricating
US5587882A (en) * 1995-08-30 1996-12-24 Hewlett-Packard Company Thermal interface for a heat sink and a plurality of integrated circuits mounted on a substrate
SE509570C2 (en) * 1996-10-21 1999-02-08 Ericsson Telefon Ab L M Temperature compensating means and procedure for mounting electronics on a circuit board
US6214647B1 (en) * 1998-09-23 2001-04-10 International Business Machines Corporation Method for bonding heatsink to multiple-height chip
TW399309B (en) * 1998-09-30 2000-07-21 World Wiser Electronics Inc Cavity-down package structure with thermal via
US6075700A (en) * 1999-02-02 2000-06-13 Compaq Computer Corporation Method and system for controlling radio frequency radiation in microelectronic packages using heat dissipation structures
JP2001085580A (en) * 1999-09-14 2001-03-30 Sumitomo Metal Electronics Devices Inc Substrate for semiconductor module and production thereof
WO2001031082A1 (en) * 1999-10-28 2001-05-03 P1 Diamond, Inc. Improved diamond thermal management components
US6212074B1 (en) * 2000-01-31 2001-04-03 Sun Microsystems, Inc. Apparatus for dissipating heat from a circuit board having a multilevel surface
US6462410B1 (en) * 2000-08-17 2002-10-08 Sun Microsystems Inc Integrated circuit component temperature gradient reducer
US6333551B1 (en) * 2000-09-07 2001-12-25 International Business Machines Corporation Surface profiling in electronic packages for reducing thermally induced interfacial stresses
US20020185726A1 (en) * 2001-06-06 2002-12-12 North Mark T. Heat pipe thermal management of high potential electronic chip packages
US6734552B2 (en) * 2001-07-11 2004-05-11 Asat Limited Enhanced thermal dissipation integrated circuit package

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103904046A (en) * 2012-10-18 2014-07-02 英飞凌科技奥地利有限公司 Passive component as thermal capacitance and heat sink
US9559047B2 (en) 2012-10-18 2017-01-31 Infineon Technologies Austria Ag Passive component as thermal capacitance and heat sink

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