CN1536443A - Positive type photo erosion resistant agent composition used for outlet spray nozzle coating method and forming method anticorrosion picture - Google Patents
Positive type photo erosion resistant agent composition used for outlet spray nozzle coating method and forming method anticorrosion picture Download PDFInfo
- Publication number
- CN1536443A CN1536443A CNA2004100319282A CN200410031928A CN1536443A CN 1536443 A CN1536443 A CN 1536443A CN A2004100319282 A CNA2004100319282 A CN A2004100319282A CN 200410031928 A CN200410031928 A CN 200410031928A CN 1536443 A CN1536443 A CN 1536443A
- Authority
- CN
- China
- Prior art keywords
- composition
- discharge nozzle
- agent composition
- positive light
- light anti
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 161
- 238000000576 coating method Methods 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims description 68
- 239000003795 chemical substances by application Substances 0.000 title claims description 67
- 230000003628 erosive effect Effects 0.000 title description 3
- 239000007921 spray Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 229920003986 novolac Polymers 0.000 claims abstract description 37
- 150000001875 compounds Chemical class 0.000 claims abstract description 8
- 239000003960 organic solvent Substances 0.000 claims abstract description 7
- 239000004793 Polystyrene Substances 0.000 claims abstract description 5
- 229920002223 polystyrene Polymers 0.000 claims abstract description 5
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 39
- 238000005530 etching Methods 0.000 claims description 36
- 239000011248 coating agent Substances 0.000 claims description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 21
- 150000002931 p-cresols Chemical class 0.000 claims description 20
- -1 phenol hydroxyl compound Chemical class 0.000 claims description 20
- 150000002672 m-cresols Chemical class 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 150000002989 phenols Chemical class 0.000 claims description 15
- 238000002156 mixing Methods 0.000 claims description 14
- 238000009833 condensation Methods 0.000 claims description 12
- 230000005494 condensation Effects 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 239000002585 base Substances 0.000 claims description 10
- 239000003513 alkali Substances 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 8
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 8
- 238000005886 esterification reaction Methods 0.000 claims description 7
- 239000007795 chemical reaction product Substances 0.000 claims description 6
- 150000000181 1,2-naphthoquinones Chemical class 0.000 claims description 3
- BXGYBSJAZFGIPX-UHFFFAOYSA-N 2-pyridin-2-ylethanol Chemical compound OCCC1=CC=CC=N1 BXGYBSJAZFGIPX-UHFFFAOYSA-N 0.000 claims description 3
- 229930192627 Naphthoquinone Natural products 0.000 claims description 3
- 150000002791 naphthoquinones Chemical class 0.000 claims description 3
- 125000002648 azanetriyl group Chemical group *N(*)* 0.000 claims description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 13
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract 1
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical group [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 abstract 1
- 229960003742 phenol Drugs 0.000 description 14
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 12
- 238000010422 painting Methods 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- KETQAJRQOHHATG-UHFFFAOYSA-N 1,2-naphthoquinone Chemical class C1=CC=C2C(=O)C(=O)C=CC2=C1 KETQAJRQOHHATG-UHFFFAOYSA-N 0.000 description 6
- 230000006978 adaptation Effects 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000007591 painting process Methods 0.000 description 5
- 239000004094 surface-active agent Substances 0.000 description 5
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 235000006408 oxalic acid Nutrition 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- NBBJYMSMWIIQGU-UHFFFAOYSA-N Propionic aldehyde Chemical compound CCC=O NBBJYMSMWIIQGU-UHFFFAOYSA-N 0.000 description 3
- 150000001299 aldehydes Chemical class 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- YWMLZQYDCHFLMO-UHFFFAOYSA-N chlorobenzene formaldehyde Chemical compound C=O.ClC1=CC=CC=C1 YWMLZQYDCHFLMO-UHFFFAOYSA-N 0.000 description 3
- 238000006482 condensation reaction Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- GBMDVOWEEQVZKZ-UHFFFAOYSA-N methanol;hydrate Chemical compound O.OC GBMDVOWEEQVZKZ-UHFFFAOYSA-N 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- 239000012744 reinforcing agent Substances 0.000 description 3
- FJJYHTVHBVXEEQ-UHFFFAOYSA-N 2,2-dimethylpropanal Chemical compound CC(C)(C)C=O FJJYHTVHBVXEEQ-UHFFFAOYSA-N 0.000 description 2
- HMNKTRSOROOSPP-UHFFFAOYSA-N 3-Ethylphenol Chemical compound CCC1=CC=CC(O)=C1 HMNKTRSOROOSPP-UHFFFAOYSA-N 0.000 description 2
- IAVREABSGIHHMO-UHFFFAOYSA-N 3-hydroxybenzaldehyde Chemical compound OC1=CC=CC(C=O)=C1 IAVREABSGIHHMO-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- HXDOZKJGKXYMEW-UHFFFAOYSA-N 4-ethylphenol Chemical compound CCC1=CC=C(O)C=C1 HXDOZKJGKXYMEW-UHFFFAOYSA-N 0.000 description 2
- RGHHSNMVTDWUBI-UHFFFAOYSA-N 4-hydroxybenzaldehyde Chemical compound OC1=CC=C(C=O)C=C1 RGHHSNMVTDWUBI-UHFFFAOYSA-N 0.000 description 2
- JAGRUUPXPPLSRX-UHFFFAOYSA-N 4-prop-1-en-2-ylphenol Chemical compound CC(=C)C1=CC=C(O)C=C1 JAGRUUPXPPLSRX-UHFFFAOYSA-N 0.000 description 2
- HGINCPLSRVDWNT-UHFFFAOYSA-N Acrolein Chemical compound C=CC=O HGINCPLSRVDWNT-UHFFFAOYSA-N 0.000 description 2
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N Butyraldehyde Chemical compound CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 150000007942 carboxylates Chemical class 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- VFLDPWHFBUODDF-FCXRPNKRSA-N curcumin Chemical compound C1=C(O)C(OC)=CC(\C=C\C(=O)CC(=O)\C=C\C=2C=C(OC)C(O)=CC=2)=C1 VFLDPWHFBUODDF-FCXRPNKRSA-N 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- HYBBIBNJHNGZAN-UHFFFAOYSA-N furfural Chemical compound O=CC1=CC=CO1 HYBBIBNJHNGZAN-UHFFFAOYSA-N 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- DTUQWGWMVIHBKE-UHFFFAOYSA-N phenylacetaldehyde Chemical compound O=CCC1=CC=CC=C1 DTUQWGWMVIHBKE-UHFFFAOYSA-N 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- APNOOECCLHIHKN-UHFFFAOYSA-N (4-hydroxyphenyl)-(4,6,6-trihydroxycyclohexa-2,4-dien-1-yl)methanone Chemical compound C1=CC(O)=CC(O)(O)C1C(=O)C1=CC=C(O)C=C1 APNOOECCLHIHKN-UHFFFAOYSA-N 0.000 description 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M .beta-Phenylacrylic acid Natural products [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- BGJSXRVXTHVRSN-UHFFFAOYSA-N 1,3,5-trioxane Chemical compound C1OCOCO1 BGJSXRVXTHVRSN-UHFFFAOYSA-N 0.000 description 1
- PCNMALATRPXTKX-UHFFFAOYSA-N 1,4-dimethylcyclohexa-2,4-dien-1-ol Chemical class CC1=CCC(C)(O)C=C1 PCNMALATRPXTKX-UHFFFAOYSA-N 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- ZCONCJFBSHTFFD-UHFFFAOYSA-N 2,3,5-triethylphenol Chemical compound CCC1=CC(O)=C(CC)C(CC)=C1 ZCONCJFBSHTFFD-UHFFFAOYSA-N 0.000 description 1
- 150000000341 2,3-xylenols Chemical class 0.000 description 1
- 150000000343 2,5-xylenols Chemical class 0.000 description 1
- IXQGCWUGDFDQMF-UHFFFAOYSA-N 2-Ethylphenol Chemical compound CCC1=CC=CC=C1O IXQGCWUGDFDQMF-UHFFFAOYSA-N 0.000 description 1
- AMJHNNBVRDMPEM-UHFFFAOYSA-N 2-ethyl-3-prop-1-en-2-ylphenol Chemical class CCC1=C(O)C=CC=C1C(C)=C AMJHNNBVRDMPEM-UHFFFAOYSA-N 0.000 description 1
- UITUMGKYHZMNKN-UHFFFAOYSA-N 2-methyl-4-prop-1-en-2-ylphenol Chemical compound CC(=C)C1=CC=C(O)C(C)=C1 UITUMGKYHZMNKN-UHFFFAOYSA-N 0.000 description 1
- WJQOZHYUIDYNHM-UHFFFAOYSA-N 2-tert-Butylphenol Chemical compound CC(C)(C)C1=CC=CC=C1O WJQOZHYUIDYNHM-UHFFFAOYSA-N 0.000 description 1
- IKEHOXWJQXIQAG-UHFFFAOYSA-N 2-tert-butyl-4-methylphenol Chemical compound CC1=CC=C(O)C(C(C)(C)C)=C1 IKEHOXWJQXIQAG-UHFFFAOYSA-N 0.000 description 1
- 150000000469 3,5-xylenols Chemical class 0.000 description 1
- VZIRCHXYMBFNFD-HNQUOIGGSA-N 3-(2-Furanyl)-2-propenal Chemical compound O=C\C=C\C1=CC=CO1 VZIRCHXYMBFNFD-HNQUOIGGSA-N 0.000 description 1
- CYEKUDPFXBLGHH-UHFFFAOYSA-N 3-tert-Butylphenol Chemical compound CC(C)(C)C1=CC=CC(O)=C1 CYEKUDPFXBLGHH-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- CQKQINNUKSBEQR-UHFFFAOYSA-N 4-[[4-(dimethylamino)phenyl]diazenyl]phenol Chemical compound CN(C)c1ccc(cc1)N=Nc1ccc(O)cc1 CQKQINNUKSBEQR-UHFFFAOYSA-N 0.000 description 1
- QHPQWRBYOIRBIT-UHFFFAOYSA-N 4-tert-butylphenol Chemical compound CC(C)(C)C1=CC=C(O)C=C1 QHPQWRBYOIRBIT-UHFFFAOYSA-N 0.000 description 1
- WBYWAXJHAXSJNI-SREVYHEPSA-N Cinnamic acid Chemical compound OC(=O)\C=C/C1=CC=CC=C1 WBYWAXJHAXSJNI-SREVYHEPSA-N 0.000 description 1
- 206010013786 Dry skin Diseases 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- IKHGUXGNUITLKF-XPULMUKRSA-N acetaldehyde Chemical compound [14CH]([14CH3])=O IKHGUXGNUITLKF-XPULMUKRSA-N 0.000 description 1
- 239000003377 acid catalyst Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000002671 adjuvant Substances 0.000 description 1
- DMLAVOWQYNRWNQ-UHFFFAOYSA-N azobenzene Chemical compound C1=CC=CC=C1N=NC1=CC=CC=C1 DMLAVOWQYNRWNQ-UHFFFAOYSA-N 0.000 description 1
- LLEMOWNGBBNAJR-UHFFFAOYSA-N biphenyl-2-ol Chemical compound OC1=CC=CC=C1C1=CC=CC=C1 LLEMOWNGBBNAJR-UHFFFAOYSA-N 0.000 description 1
- VCCBEIPGXKNHFW-UHFFFAOYSA-N biphenyl-4,4'-diol Chemical group C1=CC(O)=CC=C1C1=CC=C(O)C=C1 VCCBEIPGXKNHFW-UHFFFAOYSA-N 0.000 description 1
- 229940106691 bisphenol a Drugs 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229930016911 cinnamic acid Natural products 0.000 description 1
- 235000013985 cinnamic acid Nutrition 0.000 description 1
- 150000001896 cresols Chemical class 0.000 description 1
- MLUCVPSAIODCQM-NSCUHMNNSA-N crotonaldehyde Chemical compound C\C=C\C=O MLUCVPSAIODCQM-NSCUHMNNSA-N 0.000 description 1
- MLUCVPSAIODCQM-UHFFFAOYSA-N crotonaldehyde Natural products CC=CC=O MLUCVPSAIODCQM-UHFFFAOYSA-N 0.000 description 1
- 229940109262 curcumin Drugs 0.000 description 1
- 235000012754 curcumin Nutrition 0.000 description 1
- 239000004148 curcumin Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- VFLDPWHFBUODDF-UHFFFAOYSA-N diferuloylmethane Natural products C1=C(O)C(OC)=CC(C=CC(=O)CC(=O)C=CC=2C=C(OC)C(O)=CC=2)=C1 VFLDPWHFBUODDF-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000032050 esterification Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- ZHPNWZCWUUJAJC-UHFFFAOYSA-N fluorosilicon Chemical compound [Si]F ZHPNWZCWUUJAJC-UHFFFAOYSA-N 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 1
- OVWYEQOVUDKZNU-UHFFFAOYSA-N m-tolualdehyde Chemical compound CC1=CC=CC(C=O)=C1 OVWYEQOVUDKZNU-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- WBYWAXJHAXSJNI-UHFFFAOYSA-N methyl p-hydroxycinnamate Natural products OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000002883 o-cresols Chemical class 0.000 description 1
- BTFQKIATRPGRBS-UHFFFAOYSA-N o-tolualdehyde Chemical compound CC1=CC=CC=C1C=O BTFQKIATRPGRBS-UHFFFAOYSA-N 0.000 description 1
- FXLOVSHXALFLKQ-UHFFFAOYSA-N p-tolualdehyde Chemical compound CC1=CC=C(C=O)C=C1 FXLOVSHXALFLKQ-UHFFFAOYSA-N 0.000 description 1
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 1
- 229920002866 paraformaldehyde Polymers 0.000 description 1
- MOZWGCRWGKSWAJ-UHFFFAOYSA-N phenol;1,2-xylene Chemical class OC1=CC=CC=C1.CC1=CC=CC=C1C MOZWGCRWGKSWAJ-UHFFFAOYSA-N 0.000 description 1
- 229940100595 phenylacetaldehyde Drugs 0.000 description 1
- 150000008442 polyphenolic compounds Polymers 0.000 description 1
- RISDDVKHYROMNH-UHFFFAOYSA-N prop-1-en-2-yloxybenzene Chemical compound CC(=C)OC1=CC=CC=C1 RISDDVKHYROMNH-UHFFFAOYSA-N 0.000 description 1
- 150000003217 pyrazoles Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- SMQUZDBALVYZAC-UHFFFAOYSA-N salicylaldehyde Chemical compound OC1=CC=CC=C1C=O SMQUZDBALVYZAC-UHFFFAOYSA-N 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- KUCOHFSKRZZVRO-UHFFFAOYSA-N terephthalaldehyde Chemical compound O=CC1=CC=C(C=O)C=C1 KUCOHFSKRZZVRO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- 229940124543 ultraviolet light absorber Drugs 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- HGBOYTHUEUWSSQ-UHFFFAOYSA-N valeric aldehyde Natural products CCCCC=O HGBOYTHUEUWSSQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
- C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
- C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
- C08L61/14—Modified phenol-aldehyde condensates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Abstract
A positive type photoresist composition useful for a discharge nozzle type coating method, is provided to improve its economy by reducing the amount of the composition discharged from the nozzle and thus prevent stripe marks on the substrate. The positive type photoresist composition useful for a discharge nozzle type coating method comprise: (A) an alkali-soluble novolac resin having a weight average molecular weight of 6000 or more, when being calculated as polystyrene, (C) a compound containing a naphthoquinone diazide group; and (D) an organic solvent, and optionally further comprises (B) a compound containing a phenolic hydroxyl group having a molecular weight of 1000 or less, wherein the discharge nozzle type coating method comprises a step of applying a positive type photoresist composition over the whole surface of a substrate by relatively moving the discharge nozzle and the substrate.
Description
Technical field
The present invention relates to a kind of formation method that is applicable to the positive light anti-etching agent composition and the resist pattern of discharge nozzle type rubbing method.
Background technology
In the past, in using the liquid crystal display cells manufacturing field of small-sized glass substrate, as the resist-coating method, use be the method (following non-patent literature 1) that after the resist composition is dripped in the central authorities of substrate, is rotated.
Drop in the rubbing method of central authorities' back rotation, although can obtain good coating homogeneity, but for example under the situation of the large substrate of 1m * 1m level, rotation is got rid of when (spin) and discarded dosage against corrosion is quite a lot of, but also occurs producing the problem that substrate breakage or difficulty are guaranteed productive temp time (tact time) because of high speed rotating.Have again, drop in the method for central authorities' back rotation, because the rotational speed when coating performance depends on rotation and the coating weight of resist, if therefore this method is applicable to the 5th generation substrate (about 1000mm * 1200mm～1280mm * 1400mm) of maximization, then can not find the general-purpose motor that can obtain necessary acceleration, if order the problem of above-mentioned motor so especially with regard to existing cost of parts to increase.
In addition, even substrate size and plant bulk maximize, performance demands in the painting process such as productive temp time of the coating homogeneity of for example right ± 3%, 60～70 seconds/open is roughly constant, therefore in the method that drops in central authorities' back rotation, is difficult to satisfy the requirement beyond the coating homogeneity.
Consider from aforesaid present situation, as can be applicable to the 4th generation substrate (after the 680mm * 880mm), the novel resist coating process of the later large substrate of the 5th generation substrate particularly, the someone has proposed to adopt the resist-coating method of discharge nozzle type.
Adopting the resist-coating method of discharge nozzle type, is by discharge nozzle and substrate relatively being moved, be coated with the method for positive light anti-etching agent composition on the whole coated face of substrate.As this method, for example provide: use to have to be arranged in the ejiction opening of the ejiction opening of row shape and slit-shaped and photo-corrosion-resisting agent composition can be sprayed into the method for banded discharge nozzle by a plurality of nozzle bores.In addition, also provide the employing discharge nozzle type behind painting photoresist composition on the whole coated face of substrate, to make this substrate rotation to adjust the method for thickness.
Non-patent literature 1
Electronic journal (Electronic Journal) in August, 2002 number, 121～123 pages
Relevant discharge nozzle type rubbing method constantly has suitable apparatus for coating to be developed and open recently, and subject matter from now on is how to optimize the photo-corrosion-resisting agent composition that is used for this rubbing method.
Summary of the invention
The present invention In view of the foregoing proposes, and its purpose is to provide positive light anti-etching agent composition that can be applicable to the discharge nozzle type rubbing method and the formation method of using the resist pattern of said composition.
Discoveries such as the inventor behind painting photoresist composition on the whole coated face of substrate, form streak with the discharge nozzle type rubbing method sometimes on the coated film.Particularly when making the substrate rotation, the middle body of substrate forms the trace of strip easily.So also find, the generation of this streak can suppress by form the preceding coated film of rotation than heavy back, so the resist-coating amount will increase, in the liquid crystal display cells manufacturing field in recent years of being strict with control resist consumption (economizing thinner against corrosion), be difficult to obtain practicality especially.
Therefore, further studying intensively the back finds, by use polystyrene conversion weight-average molecular weight (Mw) as the alkali soluble resins composition at the novolac resin more than 6000, when spraying photo-corrosion-resisting agent composition by discharge nozzle and being coated on the substrate, can prevent the generation of streak, preferably can also control the resist-coating amount simultaneously, thereby finish the present invention.
It is positive light anti-etching agent composition of the present invention, be be used to have following operation promptly, by discharge nozzle and substrate are relatively moved on the whole coated face of substrate the material of the discharge nozzle type rubbing method of the operation of coating positive light anti-etching agent composition, wherein contain (A) polystyrene conversion weight-average molecular weight (Mw) and be alkali solubility novolac resin, (C) 6000 or more and contain naphthoquinones two change nitrilo compounds and (D) organic solvent.
The present invention also provides the formation method of resist pattern in addition, it is characterized in that having following operation: use the discharge nozzle type rubbing method that is coated with positive light anti-etching agent composition by discharge nozzle and substrate are relatively moved at the whole coated face of substrate, coating discharge nozzle type rubbing method positive light anti-etching agent composition of the present invention on substrate.
" discharge nozzle type rubbing method " in this instructions, be meant and have the method that is coated with the operation of positive light anti-etching agent composition by discharge nozzle and substrate are relatively moved at the whole coated face of substrate, particularly, have use have by a plurality of nozzle bores be arranged in the ejiction opening that the row shape forms nozzle method or use the method etc. of nozzle with slit-shaped ejiction opening.In addition, also comprise as described above on the whole coated face of substrate and after the painting photoresist composition, make this substrate rotation to adjust the method for thickness.
" formation unit " in this instructions is meant the monomeric unit that constitutes polymkeric substance (resin).
" coated face of substrate " in this instructions is meant the zone that needs the painting erosion resistant agent composition in the substrate, normally whole of substrate.
Embodiment
Describe the present invention below in detail.
[(A) composition]
At random select to utilize in the material that employed alkali solubility novolac resin (A) can be used as tunicle formation material from positive light anti-etching agent composition usually among the present invention, as long as (A) composition integral body is modulated into its polystyrene conversion weight-average molecular weight (below, be designated as " Mw ") and is getting final product more than 6000.
(A) if composition be lower than 6000, then in order to prevent that streak from must increase the coating weight of resist.(A) preferable range of the Mw of composition is 6000～10000.
Can enumerate that send as an envoy to following phenols and following aldehydes react and the novolac resin that obtains under the acid catalyst condition as the concrete example of alkali solubility novolac resin (A).
Described phenols can be listed below: phenol; Cresols such as m-cresols, p-cresols, o-cresols; 2,3-xylenols, 2,5-xylenols, 3,5-xylenols, 3, dimethylbenzene phenols such as 4-xylenols; M-ethyl-phenol, p-ethyl-phenol, o-ethyl-phenol, 2,3,5-pseudocuminol, 2,3,5-triethyl phenol, 4-t-butyl phenol, 3-t-butyl phenol, 2-t-butyl phenol, 2-tertiary butyl-4-methylphenol, 2-tertiary butyl-induced by alkyl hydroxybenzene such as 5-methylphenol; Alkoxy phenols such as p-metoxyphenol, m-metoxyphenol, p-thanatol, m-thanatol, p-propoxyl group phenol, m-propoxyl group phenol; O-isopropenyl phenol, p-isopropenyl phenol, 2-methyl-4-isopropenyl phenol, 2-ethyl-isopropenyl phenols such as 4-isopropenyl phenol; Aryl phenols such as phenylphenol; 4,4 '-dihydroxybiphenyl, bisphenol-A, resorcinol, p-dihydroxy-benzene, 1,2, polyhydroxy phenols such as 3-benzenetriol etc.They can use separately, perhaps also can be used in combination more than 2 kinds.In above-mentioned phenols, preferred especially m-cresols, p-cresols.
Described aldehydes can be listed below: formaldehyde, paraformaldehyde trioxane, acetaldehyde, propionic aldehyde, butyraldehyde, trimethyl-acetaldehyde, acryl aldehyde, crotonaldehyde, hexamethylene aldehyde, furfural, furylacrolein, benzaldehyde, terephthalaldehyde, phenyl acetaldehyde, α-hydrocinnamicaldehyde, the beta-phenyl propionic aldehyde, the o-hydroxy benzaldehyde, the m-hydroxy benzaldehyde, the p-hydroxy benzaldehyde, the o-tolyl aldehyde, the m-tolyl aldehyde, the p-tolyl aldehyde, o-chlorobenzene formaldehyde, m-chlorobenzene formaldehyde, p-chlorobenzene formaldehyde, cinnamic acid etc.They can use separately, perhaps also can be used in combination more than 2 kinds.In the above-mentioned aldehydes, consider preferred formaldehyde from the aspect of easy acquisition.
Can use hydrochloric acid, sulfuric acid, formic acid, oxalic acid, p-toluenesulfonic acid etc. as described acidic catalyst.
Among the present invention, (A) composition can be made of a kind of novolac resin, also can be made of the novolac resin more than 2 kinds.When constituting, can contain Mw, and the Mw that needs only (A) composition integral body is in the scope more than 6000 not at the novolac resin of 6000 above scopes by the novolac resin more than 2 kinds.
[(A1) composition, (A2) composition]
Among the present invention, alkali solubility novolac resin (A) contains at least a kind that is selected from the following resin: promptly for the mixing phenols of m-cresols/p-cresols=20/80～40/60 (input ratio), the Mw that uses formaldehyde to synthesize as condensation agent is 4000～6000 novolac resin (A1); With mixing phenols for m-cresols/p-cresols=20/80～40/60 (input ratio), use formaldehyde as the synthetic Mw of condensation agent be 5000～10000, molecular weight is higher than a kind of in the novolac resin (A2) of A1, the adjustment that this is suitable for the resist composition of high sensitivity helps improving the residual film of unexposed portion.
In described (A1), (A2), the ratio of m-cresols/p-cresols is preferably 25/75～35/65 especially.And, the part of the p-cresols that is used for reacting is present in reaction system as unreacted reactant or 2 nucleome things, after synthetic reaction finishes, will be removed when the low-molecular-weight body is the lock out operation of purpose to remove carrying out, therefore to constitute the monomer mole ratio that unit/p-cresols constitutes the unit be 25/75～45/55, particularly 30/70～40/60 to the m-cresols in the novolac resin that finally obtains.
(A1), the Mw of (A2) composition, from the high sensitivityization of resist composition with improve the residual film ratio aspect and consider that the Mw of the former (A1) preferred 4000～6000, preferred especially 4500～5500.The latter (A2) preferred 5000～10000, preferred especially 5500～6500.
When use is selected from (A1) and (A2) during at least a kind of composition (novolac resin) of composition, (A) the preferred total content of (A1) in the composition, (A2) composition is 10～60 quality %, more preferably 45～55 quality %.When (A) content of (A1) in the composition, (A2) is beyond above-mentioned scope, be difficult to obtain the effect of improving of high sensitivityization and residual film ratio.
[(A3) composition]
In addition, consider from the angle of the generation that can suppress streak effectively, preferably contain following resin in the alkali solubility novolac resin (A), that is: for the mixing phenols of m-cresols/p-cresols=50/50～70/30 (input ratio), the Mw that uses formaldehyde to synthesize as condensation agent is the novolac resin (A3) more than 9000.The ratio of described m-cresols/p-cresols is preferably 55/45～65/35.And, the part of the p-cresols that is used for reacting is present in reaction system as unreacted reactant or 2 nucleome things, after synthetic reaction finishes, can be removed when the low-molecular-weight body is the lock out operation of purpose to remove carrying out, therefore to constitute the monomer mole ratio that unit/p-cresols constitutes the unit be 55/45～75/25, particularly 60/40～70/30 to the m-cresols in the novolac resin that finally obtains.
(A3) if the Mw of composition is too big, the sensitivity of resist composition is descended, the fissility of the resist pattern in the resist pattern stripping process is brought harmful effect, and too hour, it is relatively poor to suppress the effect that streak produces, so Mw is preferably more than 9000, and more preferably 9500～15000.
When using (A3) composition, (A) (A3) composition in the composition preferably to contain proportional be 40～90 quality %, more preferably 45～55 quality %.(A) in the composition (A3) if contain proportionally greater than described scope, the sensitivity of resist composition is descended, the fissility of the resist pattern in the resist pattern stripping process is produced harmful effect, and too hour, it is relatively poor to suppress the effect that streak produces.
Among the present invention, (A) composition contains described (A1) composition and (A2) composition and (A3) 3 kinds of compositions, preferably is modulated into Mw as a whole in the scope more than 6000, below 15000.At this moment (A1) composition and (A2) composition and (A3) composition contain proportional preferably in the scope of [(A1)+(A2)]/(A3)=10/90～60/40, more preferably in 45/55～55/45 scope.
In addition as required, can also make (A) composition contain (A1), (A2), (A3) composition novolac resin in addition.(A) (A1) in the composition and (A2) and (A3) total preferably to contain proportional be more than the 50 quality %, more preferably more than the 90 quality %.Also can be 100 quality %.
[(B) composition]
Eurymeric resist composition of the present invention is to contain phenol hydroxyl compound (B) below 1000 because of containing molecular weight (M), can obtain to improve the effect of sensitivity.Especially in liquid crystal display cells manufacturing field, improve productive capacity and be very important problem, and the resist consumption figure is often more, therefore wish that the resist composition has high sensitivity and cheap characteristic, use when being somebody's turn to do (B) composition, can realize high sensitivityization with lower cost, therefore preferred.In addition, when containing (B) composition, owing to form surperficial difficult deliquescent layer securely in resist pattern, it is less that the film of the resist film of unexposed portion is received decrement during development, can suppress the development inequality that difference produced because of development time, thereby more satisfactory.
(B) if the molecular weight of composition surpasses 1000, the fall of sensitivity might increase, thereby not ideal.
As this (B) composition, can use employed molecular weight in the positive light anti-etching agent composition of the usefulness of liquid crystal display cells manufacturing in the past containing the phenol hydroxyl compound below 1000 aptly, with the containing the phenol hydroxyl compound and can effectively improve sensitivity of following general formula (III) expression, thus more satisfactory.
[in the formula, R
1～R
8Represent the alkyl of hydrogen atom, halogen atom, carbon number 1～6, the alkoxy of carbon number 1～6 or the naphthenic base of carbon number 3～6 independently of one another; R
9～R
11Represent the alkyl of hydrogen atom or carbon number 1～6 independently of one another; Q be hydrogen atom, carbon number 1～6 alkyl, can with R
9In conjunction with the group of the naphthenic base that forms carbon atom chain 3～6 or the group of representing with following chemical formula (IV)
(in the formula, R
12And R
13Represent the alkyl of hydrogen atom, halogen atom, carbon number 1～6, the alkoxy of carbon number 1～6 or the naphthenic base of carbon number 3～6 independently of one another; C represents 1～3 integer); A, b represent 1～3 integer; D represents 0～3 integer, and n represents 0～3 integer].
Can use above-mentioned wantonly a kind of containing in the phenol hydroxyl compound, also two or more kinds may be used.
Above-named containing in the phenol hydroxyl compound, the compound of representing with following formula (I) has good high sensitivityization and high residual film ratioization, thereby desirable especially.
With respect to (A) composition alkali solubility novolac resin 100 mass parts, (B) use level of composition is 1～25 mass parts, the scope of preferred 5～20 mass parts.The content of (B) composition can not obtain high sensitivityization and high residual film ratio effect very little the time fully in the photo-corrosion-resisting agent composition, and when too many, is easy to generate the residue thing on the substrate surface after the development, and raw materials cost can increase, thereby not ideal.
[(C) composition]
(C) among the present invention contain naphthoquinones two repeatedly nitrilo compound be the photonasty composition.For example can use as this (C) composition: in the past as the employed material of photonasty composition of the positive light anti-etching based composition and use thereof in packaging of liquid crystal display cells manufacturing usefulness.
For example, as (C) composition, contain phenol hydroxyl compound and 1 shown in the following formula (II), the 2-naphthoquinones two repeatedly esterification reaction product of nitrogen base sulfoacid compound is dirt cheap because of it and can modulates the photo-corrosion-resisting agent composition of high sensitivity, thereby more satisfactory.
The average esterification yield of this esterification reaction product is 50～70%, and is preferred 55～65%, if be lower than 50%, the film after developing is easily received and subtracted, and residual film ratio can step-down, and above 70% o'clock, storage stability might descend, thereby not ideal.
Described 1,2-naphthoquinones two repeatedly nitrogen base sulfoacid compound is preferred 1, and 2-naphthoquinones two is nitrogen base-5-sulfonyl compound repeatedly.
In addition, (C) composition is except described photonasty composition, and the quinone two that can also use other is nitrogen base carboxylate repeatedly, but their use amount is preferably below the 30 quality % in (C) composition, below the preferred especially 25 quality %.
As other quinone two nitrogen base carboxylate repeatedly; for example can use; above-mentioned general formula (III) is represented contains phenol hydroxyl compound and 1; 2-naphthoquinones two repeatedly nitrogen base sulfoacid compound, preferably with 1; 2-naphthoquinones two is nitrogen base-5-sulfonyl compound or 1 repeatedly, and 2-naphthoquinones two is the esterification reaction product of nitrogen base-4-sulfonyl compound repeatedly.
The use level of (C) composition in the photo-corrosion-resisting agent composition of the present invention, with respect to the alkali solubility novolac resin (A) and total amount 100 mass parts that contain phenol hydroxyl compound (B) of being added as required, preferred 15～40 mass parts, the more preferably scope of 20～30 mass parts.When (C) content of composition was less than above-mentioned scope, the decline of transfer printing was remarkable, can not form the resist pattern of required form.On the other hand, if greater than above-mentioned scope, sensitivity and resolution meeting variation, and be easy to generate the residue thing after the development treatment.
[(D)] composition]
The present composition preferably is dissolved in (A)～(C) composition and various adding ingredient in the organic solvent (D), uses with the form of solution.
As the organic solvent that uses among the present invention, consider preferred propylene glycol methyl ether acetate (PGMEA) from film thickness uniformity aspect with the good resist tunicle on good coating and the large-size glass substrate.
PGMEA is ideal when separately solvent uses, also can with solvent and the usefulness beyond the PGMEA, for example: ethyl lactate, gamma-butyrolacton, propylene glycol monobutyl ether etc.
When using ethyl lactate, be 0.1～10 times of amount with respect to the mass ratio of PGMEA, the scope of preferred 1～5 times of amount.
In addition, when using gamma-butyrolacton, be 0.01～1 times of amount with respect to the mass ratio of PGMEA, the scope of preferred 0.05～0.5 times of amount.
Special in the manufacturing field of liquid crystal display cells, require control to be formed on the thickness of the resist tunicle on the glass substrate, be generally 0.5～2.5 μ m, 1.0～2.0 μ m more preferably, for this reason, behind painting photoresist composition on the substrate, preferably make this substrate rotation with the discharge nozzle mode to adjust thickness.
Among the present invention, preferably with an organic solvent (D) is adjusted into the total amount of described (A)～(C) composition in the resist composition below the 30 quality % of gross mass of composition, is preferably 20～28 quality %.Thus, when spraying banded photoresist based composition and use thereof in packaging by discharge nozzle and being coated on the substrate, can obtain good coating, simultaneously, can also after rotation in obtain good flowability, therefore form the good resist tunicle of film thickness uniformity with high productivity, therefore more satisfactory.
[other composition]
In the composition of the present invention, in nothing undermines the scope of the object of the invention, can also use various adjuvants such as surfactant, preserving stabilizer.
Composition is suitably contained for example be used for anti-corona ultraviolet light absorber, as: 2,2,4,4 '-tetrahydroxybenzophenone, 4-dimethylamino-2 ', 4 '-dihydroxy benaophenonel, 5-amino-3-methyl isophthalic acid-phenyl-4-(4-hydroxy benzenes azo group) pyrazoles, 4-dimethylamino-4 '-hydroxyazobenzene, 4-diethylin-4 '-ethoxy azobenzene, 4-diethylin azobenzene, curcumin (crucumin) etc.
Can also suitably contain in addition and be useful on the surfactant that prevents that streak from producing, as: Off ロ ラ one De FC-430, FC431 (trade name, Sumitomo 3M (strain) system), エ Off ト Star プ EF122A, EF122B, EF122C, EF126 (goods name, ト one ケ system プ ロ ダ Network Star (strain) system) waiting fluorine is that surfactant, メ ガ Off ア Star Network R-60, R-08 fluoro-silicon such as (goods name, Japanese ink chemical industry society systems greatly) are surfactant.
In addition, in the composition of the present invention, can also suitably contain and be useful on the adaptation reinforcing agent of increase by the adaptation between the formed layer of photo-corrosion-resisting agent composition and its lower floor.As the preferred 2-of adaptation reinforcing agent (2-hydroxyethyl) pyridine, when photo-corrosion-resisting agent composition suitably contains this compound, for example on metal films such as Cr film, form in the resist pattern, can increase effectively by the adaptation between formed layer of photo-corrosion-resisting agent composition and the metal film.
When containing the adaptation reinforcing agent, if its use level is too many, the resist composition through the time change might variation, if and very little, can not fully obtain the effect that adaptation increases, therefore, preferably be located at respect to all solids composition in the scope of 0.1～10 quality %.
The photo-corrosion-resisting agent composition of this composition is suitable for the rubbing method of discharge nozzle mode, when being sprayed banded photo-corrosion-resisting agent composition and being coated on the substrate by discharge nozzle, can prevent the generation of streak.Particularly, when on substrate, making the substrate rotation after the painting photoresist composition with accent film thick (as 0.5～2.5 μ m), if do not form the resist tunicle of the coating thickness about 300～500 μ m than heavy back, be easy to generate streak after the rotation, but according to photo-corrosion-resisting agent composition of the present invention, even form the coating thickness about 160～250 μ m, preferred 160～200 μ m before the rotation, also can prevent to rotate the back and produce streak.
Photo-corrosion-resisting agent composition of the present invention, also be suitable for the discharge nozzle type rubbing method at the whole coated face of substrate according to final desired thickness painting photoresist, and the method that is not rotated (method without spin), and be suitable for behind the whole coated face painting photoresist composition of substrate, make the substrate rotation to adjust the method for thickness.Be particularly suitable for the latter's method, can suppress the resist-coating amount and prevent postrotational streak, therefore can help to reduce the resist consumption, boost productivity and reduce cost.
[the formation method of resist pattern]
Below, an embodiment of the formation method of resist pattern of the present invention is illustrated.
The formation method of resist pattern of the present invention comprises and uses the discharge nozzle type rubbing method to be coated with the operation of positive light anti-etching agent composition of the present invention on substrate.This painting process can carry out the device of the mechanism that discharge nozzle and substrate relatively move by having.Formation for discharge nozzle is not particularly limited, if from the photo-corrosion-resisting agent composition of nozzle ejection can be on substrate applied becoming band.For example can use to have and be arranged in the discharge nozzle of the ejiction opening that the row shape forms or have the discharge nozzle of slit-shaped ejiction opening by a plurality of nozzle bores.As the apparatus for coating with this painting process, known have a Tu Bu ﹠amp; The TR63000S of mode (goods name without spin; Chemical industry (strain) system is answered in Tokyo).
In addition, described painting process can also use and utilize the discharge nozzle type rubbing method to make the substrate rotation so that thickness is transferred thin method behind painting erosion resistant agent composition on the substrate.As the apparatus for coating with this painting process, known have a Xia Feng ﹠amp; The SK-1100G of rotation mode (goods name; Big Japanese screen manufacturing (strain) system), utilize CL1200 (the goods name of the scanning coating+rotation mode of MMN (many micro-nozzles); TEL's (strain) system), coating ﹠amp; The TR63000F of rotation mode (goods name; Chemical industry (strain) system is answered in Tokyo) etc.
Behind coating positive light anti-etching agent composition on the whole coated face of substrate, that be used to form resist pattern as described above operation can suitably be used known method.
For example, the substrate that is coated with photo-corrosion-resisting agent composition at 100～140 ℃ of heat dryings (prebake), is formed the resist tunicle.Afterwards, the mask figure by required optionally exposes to the resist tunicle.Wavelength during exposure can be suitable for ghi line (g line, h line and i line) or i line, uses suitable separately light source.
Afterwards,, use the developer solution of forming by alkaline aqueous solution, carry out development treatment as 1～10 quality % tetramethyl ammonium hydroxide (TMAH) aqueous solution to the resist lining after optionally exposing.
As the method that developer solution is contacted with the resist tunicle, for example can use: be covered with the method for liquid and, make developer solution spread all over the method on whole base plate surface to the other end by being arranged near the developer solution dropping liquid nozzle on the top the substrate center from an end of substrate.
Leave standstill then and develop for 50～60 seconds, implement to wash off the rinsing process of the developer solution that remains in the resist pattern surface afterwards, obtain resist pattern with rinsing liquids such as pure water.
According to the formation method of aforesaid resist pattern, owing to use the discharge nozzle type rubbing method,, also can on substrate, form the resist tunicle under coating homogeneity and the condition of productive temp time not influencing even substrate size, plant bulk maximize.And the photo-corrosion-resisting agent composition of use is suitable for the discharge nozzle mode, can prevent to produce streak in the photoresist tunicle.When particularly after coating, being rotated, can when suppressing the resist-coating amount, prevent the generation of streak, therefore help reducing manufacturing cost.
Embodiment
Obtained each rerum natura of positive light anti-etching agent composition according to following method.
(1) evaluation of streak
With apparatus for coating (chemical industry society system is answered in Tokyo, goods name TR63000F) sample (positive light anti-etching agent composition) is coated on (1100 * 1250mm on the glass substrate that is formed with the Cr film according to certain thickness (160 μ m, 180 μ m, 200 μ m)
2), and be made into the coated film that thickness is about 1.5 μ m by rotation.The formation of described apparatus for coating is: behind painting photoresist composition on the substrate, can make the substrate rotation with the discharge nozzle type rubbing method.
Then, the temperature of electric hot plate is made as 130 ℃, dries the 1st drying of carrying out for 60 seconds, then the temperature of electric hot plate is made as 120 ℃ by the convergence that is about 1mm at interval, and carry out the 2nd drying in 60 seconds by the convergence oven dry that is about at interval 0.5mm, form the resist tunicle of 1.5 μ m.
Under sodium vapor lamp, observe the surface of resulting resist tunicle, cannot see the usefulness zero of streak generation and represent, produced the usefulness * expression of streak, it be the results are shown in the table.
(2) resist pattern forms determining of ability
With apparatus for coating (chemical industry society system is answered in Tokyo, goods name TR63000F) sample (positive light anti-etching agent composition) is coated on (1100 * 1250mm on the glass substrate that is formed with the Cr film according to the thickness of 180 μ m
2), make its rotation, forming thickness is the coated film of 1.5 μ m.
Then and after above-mentioned streak evaluation is identically formed the tunicle that thickness is 1.5 μ m, be used to reproduce 3.0 μ m space of lines (line ﹠amp by being painted with; The test pattern mask of the mask figure of resist pattern space) (reticule, reticule), with mirror projectionaligner MPA-600FA (society of Canon system; Ghi line exposing device) exposes.Exposure is set at 40mJ/cm
2
Then, contacted for 60 seconds, washed for 30 seconds, and carry out Rotary drying with 23 ℃, tetramethyl ammonium hydroxide (TMAH) aqueous solution of 2.38 quality %.
(embodiment 1～4, comparative example 1)
According to the modulation of the cooperation shown in the table 1 photo-corrosion-resisting agent composition, carry out the evaluation of streak in embodiment and the comparative example.Evaluation result is as shown in table 2.
In addition, form in the ability assessment at resist pattern, on the substrate of each embodiment, 3.0 μ mline ﹠amp; The resist pattern of space is all reproduced with institute's sizing, and in the comparative example, because of the Thickness Variation that influence produced of streak, can find that change in size has taken place the part of resist pattern.
Use following (a1)～(a3) as (A) composition.(A) use level of composition is set at 100 mass parts.In the table 1, (//) expression is the potpourri that mixes with the mass ratio of being put down in writing.
(a1): for the mixing phenols of m-cresols/p-cresols=30/70, with formaldehyde is condensation agent, carrying out condensation reaction with the oxalic acid catalyzer according to well-established law and obtain novolac resin, is 5000 novolac resin to the resulting Mw of this novolac resin enforcement separating treatment with the water-methanol mixed solvent.
(a2): for the mixing phenols of m-cresols/p-cresols=30/70, with formaldehyde is condensation agent, carrying out condensation reaction with the oxalic acid catalyzer according to well-established law and obtain novolac resin, is 6300 novolac resin to the resulting Mw of this novolac resin enforcement separating treatment with the water-methanol mixed solvent.
(a3) for the mixing phenols of m-cresols/p-cresols=60/40, with formaldehyde is condensation agent, carrying out condensation reaction with the oxalic acid catalyzer according to well-established law and obtain novolac resin, is 11000 novolac resin to the resulting Mw of this novolac resin enforcement separating treatment with the water-methanol mixed solvent.
Use following (b1) of 10 mass parts as (B) composition.
(b1): above-mentioned formula (I) representative contain phenol hydroxyl compound (M=376)
Use following (c1) of 29.7 mass parts or (c2) as (C) composition.
(c1): the above-mentioned formula of 1mol (II) representative contain phenol hydroxyl compound and 2.34mol 1,2-naphthoquinones two is the esterification reaction product of nitrogen base-5-sulfonic acid chloride repeatedly.
(c2): two (the 2-methyl-4-hydroxyl-5-cyclohexyl phenyl)-3 of 1mol, 1 of 4-dihydroxy benzenes methylmethane and 1.1mol, 2-naphthoquinones two is the esterification reaction product of nitrogen base-5-sulfonic acid chloride repeatedly.
Use following (d1) of 430 mass parts as (D) composition (organic solvent).
(d1)：PGMEA。
As other composition, using with respect to all solids composition is 2-(2-hydroxyethyl) pyridine of 0.25 mass parts.
After described (A)～(D) composition and other composition uniform dissolution, add surfactant メ ガ Off ア Star Network R-60 (the goods name of 1000ppm, big Japanese ink chemical industry society system), and is that the membrane filter of 0.2 μ m filters, modulates positive light anti-etching agent composition with the aperture.
Table 1
| (A) composition (mixing ratio) (Mw) | (B) composition | (C) composition (mixing ratio) | (D) composition | |
| Embodiment 1 | ??a1/a2/a3 ??(40/10/50) ??(6000) | ????b1 | ????c1 | ????d1 |
| Embodiment 2 | ??a1/a2/a3 ??(20/30/50) ??(8000) | ????b1 | ????c1 | ????d1 |
| Embodiment 3 | ??a1/a2/a3 ??(10/40/50) ??(6000) | ????b1 | ????c1 | ????d1 |
| Embodiment 4 | ??a1/a2/a3 ??(20/30/50) ??(8000) | ????b1 | ????c1/c2 ????(1/1) | ????d1 |
| Comparative example 1 | ??a1 ??(5000) | ????b1 | ????c1 | ????d1 |
Table 2
| The evaluation of streak | |||
| ????160μm | ????180μm | ????200μm | |
| Embodiment 1 | ????○ | ????○ | ????○ |
| Embodiment 2 | ????○ | ????○ | ????○ |
| Embodiment 3 | ????○ | ????○ | ????○ |
| Embodiment 4 | ????○ | ????○ | ????○ |
| Comparative example 1 | ????× | ????× | ????× |
As mentioned above, according to the present invention, can obtain to be suitable for to utilize the positive light anti-etching agent composition of resist-coating method of discharge nozzle type and the formation method of using its resist pattern.
Claims (13)
1. discharge nozzle type rubbing method positive light anti-etching agent composition, be the positive light anti-etching agent composition that is used to have by discharge nozzle and substrate are relatively moved the discharge nozzle type rubbing method of the operation of coating positive light anti-etching agent composition on the whole coated face of substrate, wherein contain (A) polystyrene conversion weight-average molecular weight and contain naphthoquinones two repeatedly nitrilo compounds and (D) organic solvent at the alkali solubility novolac resin more than 6000, (C).
2. discharge nozzle type rubbing method positive light anti-etching agent composition as claimed in claim 1 is characterized in that, also contains (B) molecular weight and is containing the phenol hydroxyl compound below 1000.
3. discharge nozzle type rubbing method positive light anti-etching agent composition as claimed in claim 1, it is characterized in that, described (A) composition contains: for the input ratio of m-cresols/p-cresols is 20/80～40/60 mixing phenols, and using formaldehyde is 4000～6000 novolac resin (A1) as the synthetic Mw of condensation agent.
4. discharge nozzle type rubbing method positive light anti-etching agent composition as claimed in claim 1, it is characterized in that, described (A) composition contains: for the input ratio of m-cresols/p-cresols is 20/80～40/60 mixing phenols, use formaldehyde as the synthetic Mw of condensation agent be 5000～10000, molecular weight is higher than the novolac resin (A2) of described (A1).
5. discharge nozzle type rubbing method positive light anti-etching agent composition as claimed in claim 1, it is characterized in that, described (A) composition contains: for the input ratio of m-cresols/p-cresols is 50/50～70/30 mixing phenols, use formaldehyde as the synthetic Mw of condensation agent at the novolac resin more than 9000 (A3).
6. discharge nozzle type rubbing method positive light anti-etching agent composition as claimed in claim 1, it is characterized in that described (A) composition contains and is selected from: for the input ratio of m-cresols/p-cresols is that to use formaldehyde be 4000～6000 novolac resin (A1) as the synthetic Mw of condensation agent and be that to use formaldehyde be 5000～10000 as the synthetic Mw of condensation agent for 20/80～40/60 mixing phenols for the input ratio of m-cresols/p-cresols for 20/80～40/60 mixing phenols, molecular weight is higher than in the novolac resin (A2) of described A1 at least a kind and be that to use formaldehyde be novolac resin (A3) more than 9000 as the synthetic Mw of condensation agent for 50/50～70/30 mixing phenols for m-cresols/p-cresols input ratio; And be selected from described (A1) composition and (A2) value of the mass ratio [(A1)+(A2)]/(A3) of the content of at least a kind content in the composition and described (A3) composition be 10/90～60/40.
7. discharge nozzle type rubbing method positive light anti-etching agent composition as claimed in claim 2 is characterized in that, described (B) composition contain following formula (I) represented contain the phenol hydroxyl compound.
8. discharge nozzle type rubbing method positive light anti-etching agent composition as claimed in claim 1, it is characterized in that, described (C) composition contain following formula (II) represented contain phenol hydroxyl compound and 1,2-naphthoquinones two is the esterification reaction product of nitrogen base sulfoacid compound repeatedly.
9. discharge nozzle type rubbing method positive light anti-etching agent composition as claimed in claim 1 is characterized in that, described (D) composition contains propylene glycol methyl ether acetate.
10. discharge nozzle type rubbing method positive light anti-etching agent composition as claimed in claim 1 is characterized in that, also contains 2-(2-hydroxyethyl) pyridine.
11. discharge nozzle type rubbing method positive light anti-etching agent composition as claimed in claim 1, it is characterized in that, described discharge nozzle rubbing method is included on the whole coated face of described substrate behind the coating positive light anti-etching agent composition, makes the operation of described substrate rotation.
12. the formation method of a resist pattern, be by discharge nozzle and substrate are relatively moved, the method of coating positive light anti-etching agent composition on the whole coated face of substrate is characterized in that comprising that each described positive light anti-etching agent composition with claim 1～11 is coated on the operation on the substrate.
13. the formation method of resist pattern as claimed in claim 12 is characterized in that, is included in the operation that makes described substrate rotation on the described substrate after the coating positive light anti-etching agent composition.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003102048A JP4112416B2 (en) | 2003-04-04 | 2003-04-04 | POSITIVE PHOTORESIST COMPOSITION FOR DISCHARGE NOZZLE TYPE COATING METHOD AND METHOD FOR FORMING RESIST PATTERN |
| JP2003102048 | 2003-04-04 |
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| Publication Number | Publication Date |
|---|---|
| CN1536443A true CN1536443A (en) | 2004-10-13 |
| CN1313882C CN1313882C (en) | 2007-05-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100319282A Expired - Lifetime CN1313882C (en) | 2003-04-04 | 2004-03-31 | Positive type photo erosion resistant agent composition used for outlet spray nozzle coating method and forming method anticorrosion picture |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4112416B2 (en) |
| KR (1) | KR100619520B1 (en) |
| CN (1) | CN1313882C (en) |
| TW (1) | TWI305294B (en) |
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| KR101632965B1 (en) * | 2008-12-29 | 2016-06-24 | 삼성디스플레이 주식회사 | Photoresist composition and method of fabricating thin film transistor substrate |
| CN105921909A (en) * | 2016-07-18 | 2016-09-07 | 浙江亚通焊材有限公司 | Binder used for preparing high-temperature adhesive tape solders and high-temperature adhesive tape solders |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0654384B2 (en) * | 1985-08-09 | 1994-07-20 | 東京応化工業株式会社 | Positive photoresist composition |
| JP2645587B2 (en) * | 1989-03-29 | 1997-08-25 | 富士写真フイルム株式会社 | Fine pattern forming material and fine pattern forming method |
| US5700620A (en) * | 1993-12-24 | 1997-12-23 | Fuji Photo Film Co., Ltd. | Radiation ray sensitive resin compostion containing at least two different naphthoquinonediazide sulfonic acid esters and an alkali-soluble low-molecular compound |
| JP3434340B2 (en) * | 1994-03-29 | 2003-08-04 | 東京応化工業株式会社 | High-sensitivity positive photoresist composition |
| JPH11246738A (en) | 1998-03-03 | 1999-09-14 | Jsr Corp | Preparation of quinone diazido sulfonate and radiation-sensitive resin composition containing quinone diazido sulfonate |
| JP3978885B2 (en) | 1998-08-19 | 2007-09-19 | Ｊｓｒ株式会社 | Radiation sensitive resin composition |
| CN1306337C (en) * | 1998-12-10 | 2007-03-21 | Az电子材料日本株式会社 | Positively photosensitive resin composition |
| JP4150834B2 (en) | 1999-03-04 | 2008-09-17 | Ｊｓｒ株式会社 | Photosensitive resin composition, photosensitive resin film and bump forming method using the same |
| JP2000258901A (en) * | 1999-03-11 | 2000-09-22 | Jsr Corp | Radiation sensitive resin composition |
| JP2000338660A (en) | 1999-05-27 | 2000-12-08 | Toray Ind Inc | Positive type electron beam resist composition and production of resist pattern using same |
| JP3977674B2 (en) * | 2001-03-22 | 2007-09-19 | 東京エレクトロン株式会社 | Substrate coating apparatus and substrate coating method |
-
2003
- 2003-04-04 JP JP2003102048A patent/JP4112416B2/en not_active Expired - Fee Related
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- 2004-03-31 TW TW093108900A patent/TWI305294B/en active
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| Publication number | Publication date |
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| CN1313882C (en) | 2007-05-02 |
| TW200426515A (en) | 2004-12-01 |
| TWI305294B (en) | 2009-01-11 |
| KR100619520B1 (en) | 2006-09-12 |
| JP4112416B2 (en) | 2008-07-02 |
| JP2004309720A (en) | 2004-11-04 |
| KR20040088394A (en) | 2004-10-16 |
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