CN1530231A - Dielectric film forming body and piezo actuator therewith and ink jet - Google Patents
Dielectric film forming body and piezo actuator therewith and ink jet Download PDFInfo
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- CN1530231A CN1530231A CNA2004100387650A CN200410038765A CN1530231A CN 1530231 A CN1530231 A CN 1530231A CN A2004100387650 A CNA2004100387650 A CN A2004100387650A CN 200410038765 A CN200410038765 A CN 200410038765A CN 1530231 A CN1530231 A CN 1530231A
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- deielectric
- coating
- face
- ray diffraction
- constituting body
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
Abstract
A structure of a dielectric layer includes a substrate and a dielectric layer formed on the substrate. The dielectric layer has a plane orientation of (001) with respect to the substrate. The value u of the following formula 1 associated with the dielectric layer is a real number larger than 2. GBP formula 1| u=(Cc/Ca)*(Wa/Wc) Cc is a peak count number of a plane of (001') of the dielectric layer in out-of-plane X-ray diffraction measurement(wherein 1' is a selected natural number so that Cc becomes a maximum). Ca is a peak count number of a plane of (h'00) of the dielectric layer in in-plane X-ray diffraction measurement(wherein h' is a selected natural number so that Cc becomes a maximum). Wc is a width of a half of a peak value of the plane (001') in out-of-plane rocking curve X-ray diffraction measurement. Wa is a width of a half of a peak value of the plane (h'00) in in-plane rocking curve X-ray diffraction measurement.
Description
Technical field
The present invention relates to a kind of deielectric-coating constituting body that can be used for elements such as actuator, memory, sensor, it has excellent dielectric characteristic, piezoelectric property, pyroelecthc properties and strong dielectric property.In addition, the present invention relates to a kind of piezo-activator with this deielectric-coating constituting body.In addition, the present invention relates to the ink-spraying-head of this piezo-activator as the expulsion pressure producing component of atomizing of liquids.
Background technology
At present, the deielectric-coating constituting body is widely used in utilizing in the various elements such as the actuator, memory, sensor of character such as its dielectric property, piezoelectric property, pyroelecthc properties, strong dielectric property, and this deielectric-coating constituting body has by lead zirconate titanate (Pb (Zr, Ti) O
3, PZT), barium titanate (BaTiO
3), lead zirconate titanate magnesium lead niobate (Pb (Zr, Ti) O
3-Pb (Mg
1/3Nb
2/3) O
3, PZT-PMN) deielectric-coating that constitutes such as solid solution.At present, along with the miniaturization or the high performance of electronic apparatus machine, urgently wish this element self miniaturization or Highgrade integration.
For example, have in the ink-jet printer of piezo-activator as the printing ink ejection parts of the output equipment of personal computer of deielectric-coating constituting body.
It is well-known utilizing the various modes of the ink-spraying-head of piezo-activator.As this mode, can list as disclosing a kind of bimorph mode among the public clear 53-12138 of spy, a kind of single piezoelectric chip mode is disclosed among the special public clear 62-22790, in the U.S. Patent No. 4584590, among the special fair 7-33089 or U.S. Patent No. 5265315 etc. a kind of shared piezoelectric chip mode is disclosed.
Below, be example with the ink-spraying-head of the piezo-activator that utilizes single piezoelectric chip mode, illustrate ink-spraying-head.Fig. 4 A is the side view of the ink-spraying-head of single piezoelectric chip mode; Fig. 4 B represents along the profile of the 4B-4B line intercepting of Fig. 4 A.The ink-spraying-head major part is made of piezo-activator 8, fluid passage substrate 9, nozzle plate 10 these three parts.With the particular sections distance with arrange to form a plurality of nozzles 3, form jet at nozzle plate in the inboard of the fluid passage substrate of each nozzle as the ink jet opening.In addition, 1 nozzle is set, on the fluid passage substrate, forms printing ink compression chamber 1 corresponding to each nozzle corresponding to per 1 actuator.
Nozzle plate and fluid passage substrate combine by nozzle and the printing ink compression chamber that is communicated with.And, on the fluid passage substrate, forming public ink chamber 2, a plurality of printing ink compression chamber all is communicated with public ink chamber.The oscillating plate 4 of one of sidewall of printing ink compression chamber 1 (the skylight part among the figure) double as piezo-activator.On oscillating plate, stack gradually lower electrode 5, deielectric-coating 6, upper electrode 7, constitute piezo-activator thus.
When carrying out ink jet, to printing ink compression chamber 1 supply printing ink, make printing ink compression chamber 1 be full of printing ink from public ink chamber 2.Under this state,, just can make deielectric-coating 6 along the direction contraction or expansion that is parallel to face by on the upper electrode 7 of piezo-activator 8 and lower electrode 5, applying voltage.As a result, piezo-activator 8 is to the inboard or the outside curve of printing ink compression chamber 1.For example, when making piezo-activator, just the printing ink in the printing ink compression chamber is exerted pressure, utilize this pressure, just can go out droplets of ink from nozzle ejection to the inside bend of printing ink compression chamber.
Now, the serigraphy that utilizes piezoelectric ceramics to starch usually forms the deielectric-coating of universal ink-spraying-head.The piezoelectric ceramics slurry is the material that is added with a small amount of organic bond in the material powder of piezoelectric.According to particular sections apart from the printing ink compression chamber that forms them, forming on the lower electrode, carry out the composition coating, and carry out sintering by serigraphy, obtain multicrystal deielectric-coating.
But, because further developing of the lengthening (increasing the number of nozzle in per 1 shower nozzle) of the densification of nozzle arrangement and ink-spraying-head utilizes method for printing screen just to have following problem.
Under the situation of pursuit densification of nozzle arrangement in ink-spraying-head, just must reduce the width of printing ink compression chamber therewith with conforming to, obtain the bigger change in location of piezo-activator.Therefore, when realizing the further densification of nozzle arrangement, utilize serigraphy the situation that deielectric-coating can not satisfy piezoelectric property will occur.
In addition, utilizing serigraphy to form in the deielectric-coating, must in 950 ℃～1300 ℃ temperature range, carry out playing the heat-agglomerating of several hrs from ten minutes.Because the volume contraction when sintering, the figure of thus obtained deielectric-coating will produce the graph position skew when serigraphy.The skew of such deielectric-coating position, high more in nozzle arrangement density, when the ink-spraying-head lengthening is long more, just there is big problem in the influence of spray characteristic etc.And, as the highly integrated method of the printing ink compression chamber of routine, think and utilize semiconductor fabrication microfabrication silicon substrate by hope, in the time of just can avoiding utilizing serigraphy to form deielectric-coating, the silicon substrate deterioration that the heating during because of sintering causes.
In order to address the above problem, investigation utilizes sputtering method, sol-gel method, MOCVD method methods such as (MOCVD), makes membrance casting condition low temperatureization, thereby further the crystal of control medium film improves its characteristic.
For example, employing sputtering method film forming＜111 on substrate are disclosed among the Te Kaiping 6-350154〉degree of orientation is greater than deielectric-coating (piezoelectrics) element of the lead zirconate titanate of 70% rhombohedral system, and adopting sputtering method film forming＜001 on substrate〉degree of orientation is greater than deielectric-coating (piezoelectrics) element of the lead zirconate titanate of 70% cubic system, and instruction is as the application of liquid injection apparatus.
But, in above-mentioned communique, in disclosed deielectric-coating (piezoelectrics) element, have several problems.
At first, owing to compare with multicrystal lead zirconate titanate (PZT) sintered body, its piezoelectric property is higher, in most cases can not satisfy the ink jet printing machine of high density nozzle arrangement fully.And, compare with multicrystal PZT sintered body, there is life-span situation short, that piezoelectric property obviously descends when using repeatedly.
Summary of the invention
One object of the present invention is: provide a kind of and realize having the excellent dielectric characteristic, the deielectric-coating constituting body of piezoelectric property, pyroelecthc properties, strong dielectric property, can realize the miniaturization of elements such as actuator, memory, sensor, highly integrated technology, a kind of characteristic and also good piezo-activator of life performance that surpasses the deielectric-coating of existing polycrystal sintered body particularly is provided.
Another object of the present invention is: a kind of ink-spraying-head that possesses this piezo-activator, has the structure that is applicable to the high density nozzle arrangement and can extends is provided.
As the deielectric-coating constituting body of the 1st invention of the present invention, the deielectric-coating that this deielectric-coating constituting body has substrate and is provided with on substrate, wherein,
Deielectric-coating has (001) planar orientation with respect to this substrate, and this deielectric-coating is by following formula (1) expression, and u is the real number greater than 2:
u＝(C
c/C
a)×(W
a/W
c)??????????……(1)
(in above-mentioned formula (1),
C
c: (at this, l ' is C to the counting of the peak value of (00l ') face of the deielectric-coating that the outer X-ray diffraction of face is measured
cThe natural number of selecting during maximum.)；
C
a: (at this, h ' is C to the counting of the peak value of (h ' 00) face of the deielectric-coating that face internal X-ray diffraction is measured
cThe natural number of selecting during maximum.)；
W
c: the half breadth of the peak value of (00l ') face of the deielectric-coating that the outer curve of cyclical fluctuations X-ray diffraction of face is measured;
W
a: the half breadth of the peak value of (h ' 00) face of the deielectric-coating that curve of cyclical fluctuations X-ray diffraction is measured in the face.)
To counting and half breadth, the example that X-ray diffraction mensuration chart (ideograph) is shown is illustrated in the present invention.For example, measuring chart as the outer X-ray diffraction of the face of the of the present invention the 1st deielectric-coating constituting body of inventing is the situation of Fig. 5 and Fig. 6 (curve of cyclical fluctuations), C
cBe the counting of PZT (002) peak value, W
cIt is the half breadth of PZT (002) peak value of Fig. 6.
As the 1st invention of the present invention, the deielectric-coating of deielectric-coating constituting body there is no need to be set directly on the substrate, also can comprise for example intermediate layer such as cushion, electrode layer between deielectric-coating and substrate.In addition, the intermediate layer also can be multilayer.
Deielectric-coating constituting body as the 1st invention of the present invention, this deielectric-coating has (001) planar orientation with respect to this substrate, and this crystal is by being controlled by the relation of above-mentioned formula (1) expression, making u is real number greater than 2, promptly, on the film thickness direction and craspedodrome direction of deielectric-coating,, excellent dielectric characteristic, piezoelectric property, pyroelecthc properties, strong dielectric property have been realized by with the crystal of state control preferably.Use has this crystalline deielectric-coating, in these various characteristicses, has obtained to surpass the deielectric-coating constituting body of characteristic of the deielectric-coating of existing polycrystal or existing (001) planar orientation.In addition, have good life experiment, characteristic decline almost also can not occur even use repeatedly as the of the present invention the 1st deielectric-coating constituting body of inventing.In the deielectric-coating constituting body as the 1st invention of the present invention, preferred u is the real number greater than 3, and u is better greater than 5 real number, and u is best greater than 7 real number.
Deielectric-coating as the of the present invention the 1st (001) planar orientation of inventing, preferably by the outer X-ray diffraction of face measure, the counting of face outside (00l) face be below 10% or 10% of counting of (00l ') face, and by face internal X-ray diffraction measure, the counting of (h00) face face in addition is below 10% or 10% of counting of (h ' 00) face.But, be natural number arbitrarily at this h and l, the natural number that the peak counting of (h ' 00) face that the natural number that the peak counting of (00l ') face that l ' measures for the outer X-ray diffraction of face is chosen when maximum, h ' are measured for face internal X-ray diffraction is chosen when maximum.Be preferably the while below 5%, be preferably below 1%.When utilizing (001) face of dielectric of the present invention and (h00) face becoming the facial index (hkl) of crystallization, with this substrate surface the face of parallel relation being arranged is (001) face, and the face that concerns with this substrate surface approximate vertical is (h00) face.
Deielectric-coating constituting body as the 1st invention of the present invention is characterized in that the preferable medium film contains the element more than at least 3 kinds among Pb, Zr, Ti, Mg, Zn and the Nb.Preferably the preferable medium film is main component with the lead zirconate titanate.Thus, in wide temperature range, can bring into play the good characteristic of deielectric-coating constituting body.
As the deielectric-coating constituting body of the 1st invention of the present invention, the thickness of preferable medium film is more than or equal to 10nm and is less than or equal to 20 μ m.Thus, the thickness thickening by with deielectric-coating improves electric resistance to pressure.And, can use in the voltage range more widely.In addition, the blocked up and film formation time lengthening of the thickness of deielectric-coating is not wished so from the viewpoint of making efficient.More preferably more than or equal to 100nm and be less than or equal to 15 μ m, be preferably more than or equal to 500nm and be less than or equal to 10 μ m.
As the deielectric-coating constituting body of the 1st invention of the present invention, the crystal structure of preferable medium film is a cubic crystal.Can realize easily will be as the polarised direction of the deielectric-coating of cubic crystal towards film thickness direction.
The piezo-activator of the 1st invention of the present invention contains the deielectric-coating constituting body of above-mentioned the 1st invention.Therefore, owing to can bring into play, thereby just can realize the miniaturization, highly integrated of actuator above the good piezoelectric property that has piezo-activator now.
The ink-spraying-head of the 1st invention of the present invention possesses the piezo-activator of above-mentioned the 1st invention.Make the densification of nozzle arrangement and the lengthening of ink-spraying-head (increasing the number of nozzle of per 1 shower nozzle) become possibility thus, realized the high precision int that utilizes ink-spraying-head to obtain image, the high speed of print speed.
The deielectric-coating that the deielectric-coating constituting body of the present invention's the 1st invention has, the X-ray diffraction measured value is at u=(C
c/ C
a) * (W
a/ W
c) in the formula, be real number greater than 2 at u, be preferably more than 3 real number, further be real number greater than 5, during greater than 7 real number, can realize excellent dielectric characteristic, piezoelectric property, pyroelecthc properties, strong dielectric property.On these various characteristicses, surpass the characteristic of the deielectric-coating of existing polycrystal or existing (001) planar orientation, and also have good life characteristic, characteristic decline also can appear hardly even use repeatedly.
Realize the mechanism of good characteristic though can't explain deielectric-coating constituting body of the present invention in detail, can consider following such mechanism.At first, the first, the crystal orientation that can enumerate deielectric-coating does not resemble the conventional polycrystalline material at random, with direction in film thickness direction and the face.Because the function of deielectric-coating is not dispersed to all directions, concentrates on the specific direction and brings into play, and can obtain bigger effect thus.
Below, the lattice arrangement that deielectric-coating of the present invention is regularly arranged is carried out detailed consideration.Such lattice arrangement is generally legal proper alignment, but strictly sees, arrangement is also imperfect, also has the confusion of crystal orientation as everyone knows.This confusion is measured by X-ray diffraction, observes the half breadth size of the curve of cyclical fluctuations.In deielectric-coating constituting body of the present invention, think that the half breadth size of the curve of cyclical fluctuations direction in film thickness direction is wanted specific surface of crystal lattice of deielectric-coating wants big, the free degree of crystal lattice direction in face becomes big.Its result supposes as dielectric property, piezoelectric property, pyroelecthc properties, the very easy generation of the displacement of the structure ion of the deielectric-coating crystallization of the root of dielectric property by force, can embody the mechanism of good characteristic of the present invention.
Have again, in above-mentioned formula (1), be not particularly limited the X-ray diffraction condition determination that is used to obtain u, but can use: for example, 0.2 °-1 ° of gap width, x-ray tube voltage is 50kV, x-ray tube current is that the condition of 40mA is measured.
As the deielectric-coating constituting body of the 2nd invention of the present invention, have the deielectric-coating that is provided with on substrate and this substrate, it is characterized in that,
This deielectric-coating has (111) planar orientation with respect to this substrate, and this deielectric-coating represents that by following formula (2) v is the real number greater than 2:
v＝(C
111/C
-110)×(W
-110/W
111)?????????……(2)
(in above-mentioned formula (2),
C
111: the counting of the peak value of (111) face of the deielectric-coating that the outer X-ray diffraction of face is measured;
C
-110: the counting of the peak value of (110) face of the deielectric-coating that face internal X-ray diffraction is measured;
W
111: the half breadth of the peak value of (111) face of the deielectric-coating that the outer curve of cyclical fluctuations X-ray diffraction of face is measured;
W
-110: the half breadth of the peak value of (110) face of the deielectric-coating that curve of cyclical fluctuations X-ray diffraction is measured in the face.)
Have, (110) face reflection peak of the X-ray diffraction in the face exists under a plurality of occasions again, thinks C
-110And W
-110Peak value corresponding to the expression maximum count.
Deielectric-coating as the of the present invention the 2nd deielectric-coating constituting body of inventing is set directly on the substrate, also can contain for example intermediate layer such as cushion, electrode layer between deielectric-coating and substrate.In addition, the intermediate layer also can be a plurality of.
Deielectric-coating constituting body as the 2nd invention of the present invention, this deielectric-coating has (111) planar orientation with respect to this substrate, and its crystal structure is by the relation control by expression in the above-mentioned formula (2), wherein v is the real number greater than 2, promptly, by than the better state control of direction in the film thickness direction of the deielectric-coating face in parallel crystal structure, excellent dielectric characteristic, piezoelectric property, pyroelecthc properties, strong dielectric property can have been realized.Utilization has this crystalline deielectric-coating, in these various characteristicses, has obtained to surpass the deielectric-coating constituting body of characteristic of the deielectric-coating of existing polycrystal or existing (111) planar orientation.In addition, uses repeatedly and characteristic decline almost also can not occur even have good life experiment as the deielectric-coating constituting body of the 2nd invention of the present invention.In the deielectric-coating constituting body as the 2nd invention of the present invention, preferred v is the real number greater than 3, and v is better greater than 5 real number, and k is best greater than 7 real number.
Deielectric-coating as the of the present invention the 2nd (111) planar orientation of inventing, measure by the outer X-ray diffraction of face, with the counting of uneven of (111) face be below 10% or 10% of counting of (111) face, and by face internal X-ray diffraction measure, with the counting of uneven of (110) face be { below 10% or 10% of the counting of 110} face.Preferably be below 5%, to be preferably below 1% simultaneously.
Deielectric-coating constituting body as the 2nd invention of the present invention is characterized in that the preferable medium film contains the element more than at least 3 kinds among Pb, Zr, Ti, Mg, Zn and the Nb.Preferably preferred is the deielectric-coating of main component with the lead zirconate titanate.Thus, can bring into play the good characteristic of deielectric-coating constituting body in wide temperature range.
As the deielectric-coating constituting body of the 2nd invention of the present invention, the thickness of preferable medium film is more than or equal to 10nm and is less than or equal to 20 μ m.Therefore, the thickness thickening by with deielectric-coating can improve electric resistance to pressure.And, can in wideer voltage range, use.In addition, if the thickness of deielectric-coating is blocked up, then film formation time just extends, and does not wish so from the viewpoint of making efficient.More preferably more than or equal to 100nm and be less than or equal to 15 μ m, be preferably more than or equal to 500nm and be less than or equal to 10 μ m.
As the deielectric-coating constituting body of the 2nd invention of the present invention, the crystal structure of preferable medium film is the rhombohedron crystal.Unified by the polarised direction that makes deielectric-coating for the rhombohedron crystal to film thickness direction.
The piezo-activator of the 2nd invention of the present invention contains the deielectric-coating constituting body of above-mentioned the 2nd invention.Therefore, owing to can bring into play, just can realize the miniaturization, highly integrated of actuator above the good piezoelectric property that has piezo-activator now.
The ink-spraying-head of the 2nd invention of the present invention possesses the piezo-activator of above-mentioned the 2nd invention.Make the densification of nozzle arrangement and the lengthening of ink-spraying-head (increasing the number of nozzle of per 1 shower nozzle) become possibility thus, realized the high precision int that utilizes ink-spraying-head to obtain image, the high speed of print speed.
The deielectric-coating that the deielectric-coating constituting body of the 2nd invention of the present invention has, the X-ray diffraction measured value is at v=(C
111/ C
-110) * (W
-110/ W
111) in the formula, be real number greater than 2 at v, be preferably more than 3 real number, further be real number greater than 5, during greater than 7 real number, can realize excellent dielectric characteristic, piezoelectric property, pyroelecthc properties, strong dielectric property.On these various characteristicses, surpass the characteristic of the deielectric-coating of existing polycrystal or existing (111) planar orientation, and also have good life characteristic, characteristic decline also can appear hardly even use repeatedly.
Realize the mechanism of good characteristic though can't explain deielectric-coating constituting body of the present invention in detail, can consider following such mechanism.At first the first, the crystal orientation that can enumerate deielectric-coating does not resemble the conventional polycrystalline material at random, and is consistent with direction in film thickness direction and the face.Because the function of deielectric-coating is not dispersed to all directions, concentrates on the specific direction and brings into play, and can obtain bigger effect thus.
Below, the lattice arrangement that deielectric-coating of the present invention is regularly arranged is examined or check in detail.Such lattice arrangement is generally legal proper alignment, but strictly sees, arrangement is also imperfect, also has the confusion of crystal orientation as everyone knows.This confusion is measured by X-ray diffraction, observes the half breadth size of the curve of cyclical fluctuations.In deielectric-coating constituting body of the present invention, think that the half breadth size of the curve of cyclical fluctuations direction in film thickness direction is wanted specific surface of crystal lattice of deielectric-coating wants big, make free degree direction in face of lattice become big.Its result supposes as dielectric property, piezoelectric property, pyroelecthc properties, the very easy generation of the displacement of the structure ion of the deielectric-coating crystallization of the root of dielectric property by force, can embody the mechanism of good characteristic of the present invention.
Have again, in above-mentioned formula (2), be not particularly limited the X-ray diffraction condition determination that is used to obtain v, but can use: for example, 0.2 °-1 ° of gap width, x-ray tube voltage is 50kV, x-ray tube current is that the condition of 40mA is carried out.
As the deielectric-coating constituting body of the 3rd invention of the present invention, the deielectric-coating that has substrate and be provided with on this substrate is characterized in that,
This deielectric-coating has (110) planar orientation with respect to this substrate, and this deielectric-coating represents that by following formula (3) w is the real number greater than 2:
w＝(C
110/C
00m)×(W
00m/W
110)?????????????……(3)
(in above-mentioned formula (3),
C
110: the counting of the peak value of (110) face of the deielectric-coating that the outer X-ray diffraction of face is measured;
C
00m: (at this m is C to the counting of the peak value of (00m) face of the deielectric-coating that face internal X-ray diffraction is measured
00mThe natural number of selecting during maximum);
W
110: the half breadth of the peak value of (110) face of the deielectric-coating that the outer curve of cyclical fluctuations X-ray diffraction of face is measured;
W
00m: the half breadth of the peak value of (00m) face of the deielectric-coating that curve of cyclical fluctuations X-ray diffraction is measured in the face).
Deielectric-coating as the of the present invention the 3rd deielectric-coating constituting body of inventing is set directly on the substrate, also can contain for example intermediate layer such as cushion, electrode layer between deielectric-coating and substrate.In addition, the intermediate layer can be a plurality of.
Deielectric-coating constituting body as the 3rd invention of the present invention, this deielectric-coating has (110) planar orientation with respect to this substrate, and this crystal is by the relation control by above-mentioned formula (3) expression, wherein w is the real number greater than 2, promptly, by than the better state control of direction crystal structure in the film thickness direction of deielectric-coating and the face in parallel, can realize excellent dielectric characteristic, piezoelectric property, pyroelecthc properties, strong dielectric property.Utilization has this crystalline deielectric-coating, in these various characteristicses, has obtained to surpass the deielectric-coating constituting body of characteristic of the deielectric-coating of existing polycrystal or existing (110) planar orientation.In addition, have good life experiment, characteristic decline almost also can not occur even use repeatedly as the of the present invention the 3rd deielectric-coating constituting body of inventing.In the deielectric-coating constituting body as the 3rd invention of the present invention, preferred w is the real number greater than 3, and w is better greater than 5 real number, and k is best greater than 7 real number.
Deielectric-coating as the of the present invention the 3rd (110) planar orientation of inventing, by the outer X-ray diffraction of face measure, with the counting of uneven of (110) face be below 10% or 10% of counting of (110) face, and by face internal X-ray diffraction measure, and the counting of uneven of (110) face be below 10% or 10% of counting of (110) face.Preferably be below 5%, to be preferably below 1% simultaneously.
Deielectric-coating constituting body as the 3rd invention of the present invention is characterized in that the preferable medium film contains the element more than at least 3 kinds among Pb, Zr, Ti, Mg, Zn and the Nb.Preferably preferred is the deielectric-coating of main component with the lead zirconate titanate.Thus, can bring into play the good characteristic of deielectric-coating constituting body in wide temperature range.
As the deielectric-coating constituting body of the 3rd invention of the present invention, the thickness of preferable medium film is more than the 10nm, below the 20 μ m.Therefore by thickness thickening, can improve electric resistance to pressure with deielectric-coating.And, can in wideer voltage range, use.In addition, if the thickness of deielectric-coating is blocked up, film formation time is lengthening just, does not wish so from the viewpoint of making efficient.More preferably more than or equal to 100nm and be less than or equal to 15 μ m, be preferably more than or equal to 500nm and be less than or equal to 10 μ m.
The piezo-activator of the 3rd invention of the present invention contains the deielectric-coating constituting body of above-mentioned the 3rd invention.Therefore, owing to can bring into play, just can realize the miniaturization, highly integrated of actuator above the good piezoelectric property that has piezo-activator now.
The ink-spraying-head of the 3rd invention of the present invention possesses the piezo-activator of above-mentioned the 3rd invention.Make the densification of nozzle arrangement and the lengthening of ink-spraying-head (increasing the number of nozzle of per 1 shower nozzle) become possibility thus, realized the high precision int that utilizes ink-spraying-head to obtain image, the high speed of print speed.
The deielectric-coating that the deielectric-coating constituting body of the 3rd invention of the present invention has, the X-ray diffraction measured value is at w=(C
110/ C
00m) * (W
00m/ W
110) in the formula, be real number greater than 2 at w, be preferably more than 3 real number, further be real number greater than 5, during greater than 7 real number, can realize excellent dielectric characteristic, piezoelectric property, pyroelecthc properties, strong dielectric property.On these various characteristicses, surpass the characteristic of the deielectric-coating of existing polycrystal or existing (110) planar orientation, even and also have good life characteristic to use repeatedly also can to occur characteristic decline hardly.
Realize the mechanism of good characteristic though can't explain deielectric-coating constituting body of the present invention in detail, can consider based on following such mechanism.At first the first, the crystal orientation that can enumerate deielectric-coating does not resemble the conventional polycrystalline material at random, and is consistent with direction in film thickness direction and the face.Because the function of deielectric-coating is not dispersed to all directions, concentrates on the specific direction and brings into play, and can obtain bigger effect thus.
Below, the lattice arrangement that deielectric-coating of the present invention is regularly arranged is examined or check in detail.Such lattice arrangement is generally legal proper alignment, but strictly sees, arrangement is also imperfect, also has the confusion of crystal orientation as everyone knows.This confusion is measured by X-ray diffraction, observes the half breadth size of the curve of cyclical fluctuations.In deielectric-coating constituting body of the present invention, think that the half breadth size of the curve of cyclical fluctuations direction in film thickness direction is wanted specific surface of crystal lattice of deielectric-coating wants big, make free degree direction in face of lattice become big.Its result supposes as dielectric property, piezoelectric property, pyroelecthc properties, the very easy generation of the displacement of the structure ion of the deielectric-coating crystallization of the root of dielectric property by force, can embody the mechanism of good characteristic of the present invention.
Have again, in above-mentioned formula (3), be not particularly limited the X-ray diffraction condition determination that is used to obtain w, but can use: for example, 0.2 °-1 ° of gap width, x-ray tube voltage is 50kV, x-ray tube current is that the condition of 40mA is carried out.
Deielectric-coating constituting body of the present invention like this is owing to have excellent dielectric characteristic, piezoelectric property, pyroelecthc properties, strong dielectric property, just makes miniaturization, the highly integrated possibility that becomes of elements such as actuator, memory, sensor.
Further, piezo-activator of the present invention has good piezoelectric property and life experiment simultaneously, can the good piezoelectric property of long term maintenance.
Further, ink-spraying-head of the present invention when having superior droplets of ink jet power and life experiment, can also be realized the growth ink-spraying-head of high density nozzle arrangement owing to possess above-mentioned piezo-activator.
Description of drawings
Figure 1A is the perspective view of the piezo-activator of two support columns of the present invention; Figure 1B is the profile along the piezo-activator of expression two support columns of the present invention of the 1B-1B line intercepting of Figure 1A.
Fig. 2 A is the perspective view of ink-spraying-head of the present invention; Fig. 2 B is the profile along the expression ink-spraying-head of the present invention of the 2B-2B line intercepting of Fig. 2 A.
Fig. 3 A is to use the perspective view of piezo-activator of two support columns of piezoelectric ceramics slurry; Fig. 3 B is the profile along the piezo-activator of two support columns of the expression use piezoelectric ceramics slurry of the 3B-3B line intercepting of Fig. 3 A.
Fig. 4 A is the perspective view of the ink-spraying-head of single piezoelectric chip mode; Fig. 4 B is the profile along the ink-spraying-head of single piezoelectric chip mode of the 4B-4B line intercepting of Fig. 4 A.
Fig. 5 is the ideograph that X-ray diffraction is measured chart.
Fig. 6 is the ideograph that the X-ray diffraction of the curve of cyclical fluctuations is measured chart.
The specific embodiment
Be not confined to the formation method of deielectric-coating of the present invention especially, preferably can adopt methods such as sputtering method, method of evaporating, laser ablation methods, MOCVD method, molecular beam epitaxial method, sol-gel method, ion injection method, set obtain to have the creating conditions of crystal structure that has setting value by v in the u in the above-mentioned formula that illustrates (1), the formula (2) or the w in the formula (3).As the membrance casting condition that adopts sputtering method, the substrate temperature during film forming is more than 500 ℃, below 700 ℃, and argon in the argon oxygen element atmosphere/oxygen element ratio is more than 20/1, below 50/1, and air pressure is that the RF input power is 0.5W/cm more than the 0.2Pa, below the 0.5Pa
2More than, 1.2W/cm
2Below, the substrate cooling velocity after the film forming be 65 ℃/more than the min.Further optimum condition is: the argon during film forming/oxygen element ratio is more than 30/1, below 50/1, and air pressure is that the RF input power is 0.5W/cm more than the 0.2Pa, below the 0.3Pa
2More than, 0.8W/cm
2Below, the substrate cooling velocity after the film forming be 100 ℃/more than the min.Particularly wish to be cooled to till 180 ℃, in addition, preferably before film forming, carry out pressure fixing, carry out simply when half of RF input power is following when film forming, be transformed into film forming immediately by above-mentioned speed.According to the composition of above-mentioned condition corresponding to the destination media film, the condition that can select to be fit to is carried out film forming.Particularly add impurity such as La, substrate temperature is descended, and can higher setting RF input power.The substrate heating is preferably by infrared heating means or resistance heated method and carries out.In this case, the temperature deviation of substrate in positive and negative 5%, even when using the deielectric-coating of large-area substrates film forming, also can even, the stable deielectric-coating of acquired character.
The composition material of deielectric-coating of the present invention is not limited in the scope of the crystal structure that u, the v in the formula (2) in the formula (1) that acquisition before illustrated and the w in the formula (3) have predetermined value especially, can list preferred barium titanate (BaTiO
3), lead titanates (PbTiO
3, PT), lead zirconate titanate (Pb (Zr, Ti) O
3, PZT), load lanthanium titanate, inferior plumbous lead niobate (Pb (Zn
1/3Nb
2/3) O
3, PZN), magnesium lead niobate (Pb (Mg
1/3Nb
2/3) O
3, PMN), nickel lead niobate (Pb (Ni
1/3Nb
2/3) O
3, PNN), potassium niobate (KNbO
3, KN), lithium niobate (LiNbO
3, LN) etc., or be its solid solution (for example, PMN-PT solid solution, PZN-PT solid solution, PNN-PT solid solution etc.).It more preferably is the material of main component with the lead zirconate titanate.
Deielectric-coating is a purpose with material modification etc., adds micro-additive, with other element substitution component, and also can other composition of solid solution.Be not particularly limited these consumption, as preferred consumption, micro-additive is below the 10 quality %, forms the element of unit as displacement, is 10 moles below the %, as the solid solution composition, is 10 moles of whole composition below the %.
Can realize in the scope of purpose effect of the present invention, do not limit these other compositions especially, nitrogen is as advantage, elements (ion) such as Na, K, Ca, Cr, Co, Bi, Sr, La, Zr, Sn, Mg, Mn, Zn, Nb, Ta and Ni be can list, or the oxide of these elements and composite oxides etc. contained.
Deielectric-coating constituting body of the present invention also can comprise the electrode as inscape, as the structure with regulation pitch collocating medium film between relative pair of electrodes, for example can be elements such as piezoelectric element.Though do not limit electrode material especially, nitrogen is as preferred, can enumerate metals such as platinum, iridium, rubidium, palladium, rhodium, osmium, gold, silver, copper, chromium, aluminium.Especially, under the occasion of other layers such as epitaxial growth deielectric-coating on the electrode, preferred platinum.And, also can adopt the conductive characteristic oxide as electrode material.
In the present invention, when a plurality of element of formation arranged side by side, also can form a common electrode of pair of electrodes as a plurality of elements.
The substrate that is used for the present invention as long as it is just passable to stand to create conditions, is not particularly limited, and as preferably, can list silicon, strontium titanates (SrTiO
3), magnesia (MgO), zirconia (ZrO
2), stable zirconia, gallium phosphide (GaP), sapphire (-Al
2O
3) and the substrate that constitutes of material such as lead titanates.Particularly from the viewpoint of microfabrication, preferred silicon substrate.And, also can use above-mentioned material at the silicon substrate superimposed layer.At this moment, silica or the silicon nitride layer intermediate layer as them can also be provided with.
Piezo-activator of the present invention has deielectric-coating between the pair of electrodes of the said structure on the oscillating plate.Oscillating plate is at least as the part of the substrate of Supporting Media film, perhaps by forming by the stacked film of other method on substrate.As the material of the stacked film of other method, can adopt the material that can constitute the aforesaid substrate surface.
Ink-spraying-head of the present invention, the expulsion pressure producing component that has liquid ejection outlet and be used for liquid is sprayed from this jet is as the piezo-activator of this expulsion pressure producing component use said structure.With regard to liquid, can select various liquid according to corresponding target, with regard to record, can use printing ink.
Embodiment 1-5
Making is as the piezo-activator by two support columns shown in Figure 1A and Fig. 2 B of the deielectric-coating constituting body of embodiment 1-5.Figure 1A is the perspective view of the actuator of two support columns of the present invention, and Figure 1B represents along the profile of the 1B-1B line intercepting of Figure 1A.Post 101 sizes are wide 100 μ m, long 800 μ m.
At first, for forming the post figure, make mask on (100) silicon substrate 102, by sputtering method, film forming thickness is the strontium titanates of the planar orientation of 700nm～4000nm, as oscillating plate 103.104 substrates as deielectric-coating constituting body of the present invention.Similarly on this substrate, make mask,, form the lower electrode 105 of the about 100nm of thickness by the platinum of sputtering method epitaxial growth (100) planar orientation.For composition, make mask thereon, cooling condition after atmosphere when adopting the contrast of RF magnetron blast technique to form film forming lead zirconate titanate (PZT), substrate temperature, the film forming etc. by suitable adjustment, control the orientation of crystal, carry out the epitaxial growth of (100) planar orientation, form deielectric-coating 106.The membrance casting condition of this moment is: substrate temperature is 600 ℃～650 ℃, and the argon during film forming/oxygen element ratio is 25/1～30/1, and air pressure is 0.2Pa, and the RF input power during film forming is 0.8W/cm
2, with the cooling velocity after the film forming be controlled to be 100 ℃/more than the min, till below 180 ℃, with 0.3W/cm
2The RF input power carry out pressure fixing before 3 minutes the film forming.Table 2 shows the element ratio of the thickness of deielectric-coating and strontium and titanium.Carry out the composition analysis of deielectric-coating by ICP (luminescence of plasma) method.
And, deielectric-coating is carried out the outer and face internal X-ray diffraction mensuration of face.The peak value of the maximum count of the deielectric-coating during (out-of-plane) X-ray diffraction is measured outside the whole face of embodiment 1-5 is the peak value of (002) face.At this, will be made as C with maximum counting among the peak value of uneven of (002) face
Nc, during (in-plane) X-ray diffraction in the face measured with the peak value of uneven of (200) face among maximum counting be made as C
NaC during whole outer X-ray diffractions of face is measured among the embodiment 1-5
NcBe C
cBelow 10% of (is the counting of (002) face peak value at this).C during whole face internal X-ray diffraction is measured among the embodiment 1-5
NaBe C
aBelow 10% of (is the counting of (200) face peak value at this).Table 2 at length shows the ratio C of counting
Nc/ C
cAnd C
Na/ C
aAnd, C has been shown in the table 1
c, W
c, C
a, W
a, u.
And,, form upper electrode 107 by the platinum of the about 100nm thickness of sputtering method film forming on deielectric-coating.At last, remove the silicon of post bottom, finish the actuator of two support columns by anisotropic etch.
Between the upper electrode of this actuator and lower electrode, apply voltage, carry out 10
7The life experiment of inferior displacement repeatedly.Table 2 shows the displacement that applies voltage, initial stage, 10 of this moment
7Displacement after the inferior life experiment, with respect to the initial stage 10
7The slip of the displacement after the inferior life experiment.
Table 1
| Embodiment | ?C c | ?W c(°) | ?C a | ?W a(°) | ?u |
| ?1 | ?21079 | ?0.26 | ?5373 | ?0.48 | ?7.24 |
| ?2 | ?20873 | ?0.24 | ?5296 | ?0.32 | ?5.26 |
| ?3 | ?27664 | ?0.36 | ?9734 | ?0.39 | ?3.08 |
| ?4 | ?22486 | ?0.34 | ?9150 | ?0.38 | ?2.75 |
| ?5 | ?18667 | ?0.47 | ?9739 | ?0.52 | ?2.12 |
Table 2
| Embodiment | Thickness (μ m) | The Zr/Ti ratio | ??C nc/C c??(％) | ??C na/C a??(％) | ??u | Apply voltage (V) | Initial stage displacement (μ m) | Displacement behind the life experiment (μ m) | Displacement slip (%) |
| ??1 | ??2.26 | ??54/46 | ??0.12 | ??0.11 | ??7.24 | ??±70 | ??1.27 | ??1.27 | ??0.00 |
| ??2 | ??1.36 | ??55/45 | ??0.08 | ??0.12 | ??5.26 | ??±40 | ??1.07 | ??1.05 | ??1.87 |
| ??3 | ??3.19 | ??42/58 | ??0.43 | ??0.28 | ??3.08 | ??±95 | ??0.91 | ??0.88 | ??3.30 |
| ??4 | ??1.83 | ??41/59 | ??0.34 | ??0.26 | ??2.75 | ??±55 | ??0.84 | ??0.81 | ??3.57 |
| ??5 | ??0.82 | ??62/38 | ??0.83 | ??0.62 | ??2.12 | ??±25 | ??0.74 | ??0.70 | ??5.41 |
Comparative example 1
Following making is by the piezo-activator of two support columns shown in Fig. 3 A and Fig. 3 B.After stacked warp dashes the stable strontium oxide strontia raw cook of processing,, form two support columns of wide 200 μ m, long 800 μ m through adding thermo-compressed.Used as substrate 401, serigraphy contains after the electrode cream of platinum on post, and drying forms lower electrode 402.On lower electrode, apply drying after the piezoelectric ceramics cream of lead zirconate titanate (PZT) by serigraphy, form deielectric-coating 403.Serigraphy contains drying after the electrode cream of platinum on deielectric-coating, forms upper electrode 404.Simultaneously sintering are by the substrate that obtains, lower electrode, deielectric-coating at 110 ℃, and the constituting body that forms of upper electrode is finished the actuator of two support columns.The result that X-ray diffraction is measured, deielectric-coating is the polycrystal of non orientation.Table 4 shows the thickness of deielectric-coating and the ratio of strontium and titanium elements.
Each embodiment that uses this actuator is similarly carried out 10
7The inferior life experiment of displacement repeatedly.The displacement that applies voltage, initial stage, 10 of this moment has been shown in the table 4
7Displacement after the inferior life experiment repeatedly, with respect to 10 of the initial stage
7The slip of the displacement after the inferior life experiment repeatedly.
Comparative example 2-7
By the operation identical with embodiment 1, the cooling condition after the atmosphere when adjusting the deielectric-coating film forming, substrate temperature, the film forming etc. are made the piezo-activator of two support columns of comparative example 2-7.Have again, during the deielectric-coating film forming, the cooling velocity after the film forming is not controlled at below 400 ℃.In addition, the identical power of RF input power during with film forming, and by carrying out pressure fixing in 60 minutes.Result, the particularly deielectric-coating of comparative example 2 that X-ray diffraction is measured, in measuring outside face, (00h) peak value outside the face is also noticeable, is the low polycrystal of (001) planar orientation.Table 4 shows the thickness of deielectric-coating and the ratio of strontium and titanium elements.Table 3 and table 4 show the result that face is outer and face internal X-ray diffraction is measured.
Carry out 10 with this actuator
7The inferior life experiment of displacement repeatedly.The displacement that applies voltage, initial stage, 10 of this moment has been shown in the table 4
7Displacement after the inferior life experiment, with respect to 10 of the initial stage
7The slip of the displacement after the inferior life experiment.
Table 3
| Comparative example | ?C c | ?W c(°) | ?C a | ?W a(°) | ?u |
| ?1 | |||||
| ?2 | ?17873 | ?0.81 | ?9958 | ?0.85 | ?1.88 |
| ?3 | ?17844 | ?0.79 | ?9826 | ?0.41 | ?0.94 |
| ?4 | ?18781 | ?0.68 | ?13862 | ?0.34 | ?0.68 |
| ?5 | ?19187 | ?0.57 | ?13186 | ?0.61 | ?1.56 |
| ?6 | ?21989 | ?0.26 | ?14123 | ?0.31 | ?1.86 |
| ?7 | ?19914 | ?0.57 | ?14326 | ?0.60 | ?1.46 |
Table 4
| Comparative example | Thickness (μ m) | The Zr/Ti ratio | ??C nc/C c??(％) | ??C na/C a??(％) | ??u | Apply voltage (V) | Initial stage displacement (μ m) | Displacement behind the life experiment (μ m) | Displacement slip (%) |
| ??1 | ??2.82 | ??52/48 | ??±85 | ??0.18 | ??0.15 | ??16.67 | |||
| ??2 | ??1.62 | ??61/39 | ??32.74 | ??35.31 | ??1.88 | ??±50 | ??0.26 | ??0.20 | ??23.08 |
| ??3 | ??1.35 | ??43/57 | ??0.75 | ??0.89 | ??0.94 | ??±40 | ??0.25 | ??0.18 | ??28.00 |
| ??4 | ??2.40 | ??55/45 | ??0.97 | ??1.65 | ??0.68 | ??±72 | ??0.28 | ??0.20 | ??28.57 |
| ??5 | ??2.72 | ??60/40 | ??0.59 | ??0.27 | ??1.56 | ??±80 | ??0.66 | ??0.60 | ??9.09 |
| ??6 | ??1.48 | ??53/47 | ??2.73 | ??4.03 | ??1.86 | ??±45 | ??0.62 | ??0.55 | ??11.29 |
| ??7 | ??2.06 | ??39/61 | ??5.75 | ??6.89 | ??1.46 | ??±60 | ??0.42 | ??0.37 | ??11.90 |
On (100) strontium titanates substrate, adopting sputtering method epitaxial growth thickness is the platinum of (100) planar orientation of 10nm, as lower electrode.On lower electrode, adopt the lead zirconate titanate of RF magnetron bombardment method by above-mentioned membrance casting condition epitaxial growth (100) planar orientation, be the deielectric-coating of 10nm as thickness.Table 5 shows the elemental ratio of thickness, zirconium and the titanium of deielectric-coating, the result that X-ray diffraction is measured.On deielectric-coating, adopting the sputtering method film forming thickness is the platinum of 10nm, as upper electrode, finishes the deielectric-coating constituting body.It is carried out withstand voltage test.Apply voltage and be up to 1V, do not produce leakage current, no resistance to pressure problem.
Table 5
| Embodiment | Thickness (μ m) | The Zr/Ti ratio | ??C c | ??W c(°) | ??C a | ??W a(°) | ??u | ??C nc/C c??(％) | ??C na/C a??(％) |
| ??6 | ??10 | ??55/45 | ??7918 | ??0.23 | ??1929 | ??0.51 | ??7.22 | ??0.23 | ??0.25 |
Ink-spraying-head shown in following such construction drawing 2A and Fig. 2 B.Fig. 2 A is a perspective view of showing an example of ink-spraying-head of the present invention, and Fig. 2 B is the profile along the 2B-2B line intercepting of Fig. 2 A.
Becoming on (100) silicon substrate of fluid passage substrate 201, the strontium titanate layer of (100) planar orientation by the about 2000nm of its thickness of sputtering method film forming is as oscillating plate 202.With its substrate 203 as deielectric-coating constituting body of the present invention.Position according to form printing ink compression chamber 208 on this strontium titanate layer utilizes mask to carry out composition, with the platinum of sputtering method epitaxial growth (100) planar orientation, forms the lower electrode 204 that thickness is approximately 100nm.On lower electrode 204, utilize mask, by wide 100 μ m, long 5mm composition, by the deielectric-coating 205 of RF magnetron bombardment method with the 0.9PZT-0.1PMN solid solution of above-mentioned membrance casting condition epitaxial growth (001) planar orientation, its pitch with 200dpi on width forms 200.Table 6 shows the elemental ratio of thickness, zirconium and the titanium of deielectric-coating, the result that X-ray diffraction is measured.And, on deielectric-coating,, form upper electrode 206 by the platinum of the about 100nm of its thickness of sputtering method film forming.
Pass through reactive ion etching (RIE) from the downside of fluid passage substrate 201, form the path (not shown) of path 210, the public ink chamber of connection and the ink tank of printing ink compression chamber 208, public ink chamber 209, connection printing ink compression chamber and public ink chamber.Next, on another silicon substrate 211, utilize reactive ion etching (RIE), with the pitch formation nozzle 212 of 200dpi, as nozzle plate 211 corresponding to each printing ink compression chamber 208.Shown in Fig. 2 A and Fig. 2 B,, finish ink-spraying-head in conjunction with fluid passage substrate 201 and nozzle plate 211.
Adopt this ink-spraying-head, carry out jet test.The droplets of ink of 10pl can be sprayed with the jet velocity of 14.5m/sec, enough jet velocities can be obtained.
Table 6
| Embodiment | Thickness (μ m) | The Zr/Ti ratio | ??C c | ??W c(°) | ??C a | ??W a(°) | ??u | ??C nc/C c??(％) | ??C na/C a??(％) |
| ??7 | 2.04 | ??51/49 | ??20142 | ??0.29 | ??5105 | ??0.53 | ??7.21 | ??0.65 | ??0.69 |
Embodiment 8-12
Below make like that as the Figure 1A of the deielectric-coating constituting body of embodiment 8-12 and the piezo-activator of two support columns shown in Figure 1B.Figure 1A is the perspective view of the actuator of two support columns of the present invention, and Figure 1B is the profile along the 1B-1B line intercepting of Figure 1A.Post 101 sizes are wide 100 μ m, long 800 μ m.
At first, for forming the post figure, make mask on (100) silicon substrate 102, by sputtering method, film forming thickness is the strontium titanates of 700nm～4000nm (111) planar orientation, as oscillating plate 103.104 substrates as deielectric-coating constituting body of the present invention.Similarly on this substrate, make mask,, form the lower electrode 105 of the about 100nm of thickness by the platinum of sputtering method epitaxial growth (111) planar orientation.For composition, make mask thereon, cooling condition after atmosphere when adopting the contrast of RF magnetron blast technique to form film forming lead zirconate titanate (PZT), substrate temperature, the film forming etc. by suitable adjustment, control the orientation of crystal, carry out the epitaxial growth of (111) planar orientation, form deielectric-coating 106.The membrance casting condition of this moment is: substrate temperature is 600 ℃～650 ℃, and the argon during film forming/oxygen element ratio is 25/1～30/1, and air pressure is 0.2Pa, and the RF input power during film forming is 0.8W/cm
2, the cooling velocity after the film forming be controlled to be 100 ℃/more than the min, till below 180 ℃, with 0.3W/cm
2Input power carry out 3 minutes film forming pressure fixing.Table 7 shows the element ratio of the thickness of deielectric-coating and strontium and titanium.Carry out the composition analysis of deielectric-coating by ICP (luminescence of plasma) method.
And, deielectric-coating is carried out the outer and face internal X-ray diffraction mensuration of face.The peak value of the maximum count of the deielectric-coating during X-ray diffraction is measured outside the whole face of embodiment 8-12 is the peak value of (111) face.At this, will be made as C with maximum counting among the peak value of uneven of (111) face
N111, face internal X-ray diffraction is measured with { counting of maximum is made as C among the peak value that the 110} face is uneven
N-110The C that the whole outer X-ray diffraction of face of embodiment 8-12 is measured
N111Be C
111Below 10%.Cn during the whole face internal X-ray diffraction of embodiment 8-12 is measured
-110Be C
-110Below 10%.Table 8 at length shows the ratio C of counting
N111/ C
111And C
N-110/ C
-110And, C has been shown in the table 7
111, W
111, C
-110, W
-110, v.
And, by platinum, the formation upper electrode 107 of sputtering method about 100nm of film forming thickness on deielectric-coating.At last, remove the silicon of post bottom, finish the actuator of two support columns by anisotropic etch.
Between the upper electrode of this actuator and lower electrode, apply voltage, carry out 10
7The life experiment of inferior displacement repeatedly.Table 8 shows the displacement that applies voltage, initial stage, 10 of this moment
7Displacement after the inferior life experiment, with respect to 10 of the initial stage
7The slip of the displacement after the inferior life experiment.
Table 7
| Embodiment | ?C 111 | ?W 111(°) | ?C -110 | ?W -110(°) | ?v |
| ?8 | ?4031 | ?1.18 | ?2106 | ?4.48 | ?7.27 |
| ?9 | ?5218 | ?2.87 | ?1324 | ?3.86 | ?5.30 |
| ?10 | ?1931 | ?1.15 | ?2106 | ?4.08 | ?3.25 |
| ?11 | ?2810 | ?4.75 | ?1143 | ?5.30 | ?2.74 |
| ?12 | ?5833 | ?3.78 | ?2843 | ?4.16 | ?2.26 |
Table 8
| Embodiment | Thickness (μ m) | The Zr/Ti ratio | ?C n111/C 11??1(％) | C n-110/C -1??10(％) | ??v | Apply voltage (V) | Initial stage displacement (μ m) | Displacement behind the life experiment (μ m) | Displacement slip (%) |
| ??8 | ??2.88 | ??44/56 | ??0.25 | ??0.32 | ??7.27 | ??±85 | ??1.14 | ??1.13 | ??0.88 |
| ??9 | ??1.75 | ??53/47 | ??0.21 | ??0.24 | ??5.30 | ??±50 | ??1.03 | ??1.01 | ??1.94 |
| ??10 | ??1.21 | ??60/40 | ??0.36 | ??0.25 | ??3.25 | ??±35 | ??0.96 | ??0.94 | ??2.08 |
| ??11 | ??2.45 | ??56/44 | ??0.44 | ??0.71 | ??2.74 | ??±75 | ??0.85 | ??0.82 | ??3.53 |
| ??12 | ??3.26 | ??42/58 | ??0.47 | ??0.56 | ??2.26 | ??±100 | ??0.78 | ??0.74 | ??5.13 |
Comparative example 8-13
By the operation identical with embodiment 8, the cooling condition after the atmosphere when adjusting the deielectric-coating film forming, substrate temperature, the film forming etc. are made the piezo-activator of two support columns of comparative example 8-13.Have again, during the deielectric-coating film forming, the cooling velocity after the film forming is not controlled at below 400 ℃.In addition, the identical power of RF input power with film forming the time, and by carrying out pressure fixing in 60 minutes.Result, the particularly deielectric-coating of comparative example 9 that X-ray diffraction is measured, in measuring outside face, the peak value outside (111) face is also prominent, is the low polycrystal of (111) planar orientation.Table 10 shows the thickness of deielectric-coating and the ratio of strontium and titanium elements.Table 9 and table 10 show the result that face is outer and face internal X-ray diffraction is measured.
Carry out 10 with this actuator
7The inferior life experiment of displacement repeatedly.The displacement that applies voltage, initial stage, 10 of this moment has been shown in the table 10
7Displacement after the inferior life experiment, with respect to 10 of the initial stage
7The slip of the displacement after the inferior life experiment.
Table 9
| Comparative example | ?C 111 | W 111(°) | ?C -110 | ?W -110(°) | ?v |
| ?8 | ?1685 | ?5.83 | ?1106 | ?6.30 | ?1.65 |
| ?9 | ?4878 | ?2.26 | ?3207 | ?1.17 | ?0.79 |
| ?10 | ?6737 | ?5.98 | ?4879 | ?2.99 | ?0.69 |
| ?11 | ?3356 | ?3.89 | ?3263 | ?4.75 | ?1.26 |
| ?12 | ?3664 | ?2.60 | ?2353 | ?3.10 | ?1.86 |
| ?13 | ?2844 | ?1.78 | ?2387 | ?1.88 | ?1.26 |
Table 10
| Comparative example | Thickness (μ m) | The Zr/Ti ratio | ?C n111/C 11??1(％) | C n110/C -11??0(％) | ??u | Apply voltage (V) | Initial stage displacement (μ m) | Displacement behind the life experiment (μ m) | Displacement slip (%) |
| ??8 | ??2.10 | ??58/42 | ??38.67 | ??39.44 | ??1.65 | ??±65 | ??0.29 | ??0.23 | ??20.69 |
| ??9 | ??1.26 | ??56/44 | ??0.93 | ??1.14 | ??0.79 | ??±40 | ??0.26 | ??0.19 | ??26.92 |
| ??10 | ??2.47 | ??38/62 | ??0.25 | ??0.37 | ??0.69 | ??±75 | ??0.29 | ??0.21 | ??27.59 |
| ??11 | ??2.28 | ??48/52 | ??0.84 | ??0.63 | ??1.26 | ??±70 | ??0.69 | ??0.63 | ??8.70 |
| ??12 | ??3.12 | ??58/42 | ??3.67 | ??3.85 | ??1.86 | ??±95 | ??0.64 | ??0.56 | ??12.50 |
| ??13 | ??1.86 | ??57/43 | ??7.55 | ??8.76 | ??1.26 | ??±55 | ??0.45 | ??0.39 | ??13.33 |
Embodiment 13
On (111) strontium titanates substrate, adopting sputtering method epitaxial growth thickness is the platinum of 10nm, (111) planar orientation, as lower electrode.On lower electrode, adopt the lead zirconate titanate of RF magnetron bombardment method by above-mentioned membrance casting condition epitaxial growth (111) planar orientation, be the deielectric-coating of 10nm as thickness.Table 11 shows the elemental ratio of thickness, zirconium and the titanium of deielectric-coating, the result that X-ray diffraction is measured.On deielectric-coating, adopting the sputtering method film forming thickness is the platinum of 10nm, as upper electrode, finishes the deielectric-coating constituting body.It is carried out withstand voltage test.Apply voltage and be up to 1V, do not produce leakage current, no resistance to pressure problem.
Table 11
| Embodiment | Thickness (μ m) | The Zr/Ti ratio | ??C 111 | W 111(°) | C -110 | W -110(°) | ?w | ??C n111/C 111??(％) | ??C n-110/C -110??(％) |
| ??13 | ??10 | ??53/47 | ??6255 | 2.82 | 1878 | 6.12 | ??7.23 | ??0.76 | ??0.83 |
Embodiment 14
Ink-spraying-head shown in following such construction drawing 2A and Fig. 2 B.Fig. 2 A is a perspective view of showing an example of ink-spraying-head of the present invention, and Fig. 2 B is the profile along the 2B-2B line intercepting of Fig. 2 A.
Becoming on (100) silicon substrate of fluid passage substrate 201, be approximately the strontium titanate layer of (111) planar orientation of 2000nm by the sputtering method film forming thickness, as oscillating plate 202.With its substrate 203 as deielectric-coating constituting body of the present invention.Position according to form printing ink compression chamber 208 on this strontium titanate layer utilizes mask to carry out composition, with the platinum of sputtering method epitaxial growth (111) planar orientation, forms the lower electrode 204 that thickness is approximately 100nm.On lower electrode 204, utilize mask, by wide 100 μ m, long 5mm composition, by the deielectric-coating 205 of RF magnetron bombardment method with the 0.9PZT-0.1PMN solid solution of above-mentioned membrance casting condition epitaxial growth (111) planar orientation, its pitch with 200dpi on width forms 200.Table 12 shows the elemental ratio of thickness, zirconium and the titanium of deielectric-coating, the result that X-ray diffraction is measured.And, on deielectric-coating,, form upper electrode 206 by the platinum of the about 100nm of sputtering method film forming thickness.
Pass through reactive ion etching (RIE) from the downside of fluid passage substrate 201, form the path (not shown) of path 210, the public ink chamber of connection and the ink tank of printing ink compression chamber 208, public ink chamber 209, connection printing ink compression chamber and public ink chamber.Next, on another silicon substrate 211, utilize reactive ion etching (RIE), with the pitch formation nozzle 212 of 200dpi, as nozzle plate 211 corresponding to each printing ink compression chamber 208.Shown in Fig. 2 A and Fig. 2 B,, finish ink-spraying-head in conjunction with fluid passage substrate 201 and nozzle plate 211.
Adopt this ink-spraying-head, carry out jet test.Affirmation can be sprayed the droplets of ink of 12pl with the jet velocity of 16.1m/sec, can obtain enough jet velocities.
Table 12
| Embodiment | Thickness (μ m) | The Zr/Ti ratio | C 111 | ?W 111?(°) | C -110 | ?W -110(°) | ??w | C n111/ C 111(％) | C n-110/C -110(％) |
| ??14 | 2.13 | 60/40 | 5542 | ?2.21 | 2254 | ?6.54 | ??7.28 | 0.36 | 0.45 |
Embodiment 15-19
Following such making as the Figure 1A of the deielectric-coating constituting body of embodiment 15-19 and the piezo-activator of two support columns shown in Figure 1B.Figure 1A is the perspective view of the actuator of two support columns of the present invention, and Figure 1B represents along the profile of the 1B-1B line intercepting of Figure 1A.Post 101 sizes are wide 100 μ m, long 800 μ m.
At first, making mask for forming the post figure on (100) silicon substrate 102, by sputtering method, is the strontium titanates of thick (110) planar orientation of 700nm～4000nm with film forming thickness, as oscillating plate 103.104 substrates as deielectric-coating constituting body of the present invention.Similarly on this substrate, make mask,, form the lower electrode 105 of the about 100nm of thickness by the platinum of sputtering method epitaxial growth (110) planar orientation.For composition is made mask thereon, cooling condition after atmosphere when adopting the contrast of RF magnetron blast technique to form film forming lead zirconate titanate (PZT), substrate temperature, the film forming etc. by suitable adjustment, control the orientation of crystal, carry out the epitaxial growth of (110) planar orientation, form deielectric-coating 106.The membrance casting condition of this moment is: 600 ℃～650 ℃ of substrate temperatures, and the argon during film forming/oxygen element ratio is 25/1～30/1, and air pressure is 0.2Pa, and the RF input power during film forming is 0.8W/cm
2, with the cooling velocity after the film forming be controlled to be 100 ℃/more than the min, till below 180 ℃, with 0.3W/cm
2The RF input power carry out pressure fixing before 3 minutes the film forming.Table 7 shows the element ratio of the thickness of deielectric-coating and strontium and titanium.Carry out the composition analysis of deielectric-coating by ICP (luminescence of plasma) method.
And, carry out outside the plane and face internal X-ray diffraction mensuration to deielectric-coating.The peak value of the maximum count of the deielectric-coating during X-ray diffraction is measured outside the whole face of embodiment 15-19 is the peak value of (110) face.At this, will be made as C with maximum counting among the peak value of uneven of (110) face
N110, face internal X-ray diffraction is measured the peak value of the face be not parallel to (001) face among maximum counting be made as C
N001C during the whole outer X-ray diffraction of face of embodiment 15-19 is measured
N110Be C
110Below 10%.C during the whole face internal X-ray diffraction of embodiment 15-19 is measured
N001Be C
001Below 10%.Table 14 at length shows the ratio C of counting
N110/ C
110And C
N001/ C
001And, C has been shown in the table 13
110, W
110, C
001, W
001, W.
And,, form upper electrode 107 by the platinum of the about 100nm thickness of sputtering method film forming on deielectric-coating.At last, remove the silicon of post bottom, finish the actuator of two support columns by anisotropic etch.
Between the upper electrode of this actuator and lower electrode, apply voltage, carry out 10
7The life experiment of inferior displacement repeatedly.Table 14 shows voltage, the displacement at initial stage, 10 that apply this moment
7Displacement after the inferior life experiment, with respect to the initial stage 10
7The slip of the displacement after the inferior life experiment.
Table 13
| Embodiment | ?C 110 | ?W 110(°) | ?C 001 | ?W 001(°) | ?w |
| ?15 | ?3224 | ?1.29 | ?1850 | ?5.28 | ?7.13 |
| ?16 | ?2816 | ?1.27 | ?1726 | ?4.08 | ?5.24 |
| ?17 | ?2566 | ?1.76 | ?1487 | ?3.39 | ?3.32 |
| ?18 | ?2494 | ?2.98 | ?1662 | ?5.34 | ?2.69 |
| ?19 | ?2638 | ?2.56 | ?1872 | ?3.98 | ?2.19 |
Table 14
| Embodiment | Thickness (μ m) | The Zr/Ti ratio | ?C n110/C 11??0(％) | C n001/C 00??1(％) | ??w | Apply voltage (V) | Initial stage displacement (μ m) | Displacement behind the life experiment (μ m) | Displacement slip (%) |
| ??15 | ??2.52 | ??70/30 | ??0.15 | ??0.17 | ??7.13 | ??70 | ??1.18 | ??1.17 | ??0.85 |
| ??16 | ??2.38 | ??68/32 | ??0.19 | ??0.25 | ??5.24 | ??70 | ??1.02 | ??1.00 | ??1.96 |
| ??17 | ??2.47 | ??75/25 | ??0.37 | ??0.33 | ??3.32 | ??70 | ??0.93 | ??0.91 | ??2.15 |
| ??18 | ??2.64 | ??71/29 | ??0.40 | ??0.45 | ??2.69 | ??70 | ??0.80 | ??0.77 | ??3.75 |
| ??19 | ??2.19 | ??70/30 | ??0.25 | ??0.28 | ??2.19 | ??50 | ??0.71 | ??0.67 | ??5.63 |
Comparative example 14-16
By the operation identical with embodiment 15, the cooling condition after the atmosphere when adjusting the deielectric-coating film forming, substrate temperature, the film forming etc. are made the piezo-activator of two support columns of comparative example 14-16.When the deielectric-coating film forming is arranged again, the cooling velocity after the film forming is not controlled at below 400 ℃, in addition, the identical power of RF input power with film forming the time, and by carrying out pressure fixing in 60 minutes.Table 16 shows the thickness of deielectric-coating and the ratio of strontium and titanium elements.Table 15 and table 16 show the result that face is outer and face internal X-ray diffraction is measured.
Carry out 10 with this actuator
7The inferior life experiment of displacement repeatedly.The displacement that applies voltage, initial stage, 10 of this moment has been shown in the table 16
7Displacement after the inferior life experiment, with respect to 10 of the initial stage
7The slip of the displacement after the inferior life experiment.
Table 15
| Comparative example | ?C 110 | ?W 110(°) | ?C 001 | ?W 001(°) | ?w |
| ?14 | ?2153 | ?3.25 | ?1882 | ?4.86 | ?1.71 |
| ?15 | ?2382 | ?3.78 | ?1834 | ?4.13 | ?1.42 |
| ?16 | ?2127 | ?4.56 | ?2079 | ?3.92 | ?0.88 |
Table 16
| Comparative example | Thickness (μ m) | The Zr/Ti ratio | ??C n110/C 11??0(％) | ??C 1001/C 00??1(％) | ??w | Apply voltage (V) | Initial stage displacement (μ m) | Displacement behind the life experiment (μ m) | Displacement slip (%) |
| ??14 | ??2.46 | ??68/32 | ??0.57 | ??0.17 | ??1.71 | ??70 | ??0.61 | ??0.55 | ??9.84 |
| ??15 | ??2.50 | ??72/28 | ??0.34 | ??0.25 | ??1.42 | ??70 | ??0.58 | ??0.51 | ??12.07 |
| ??16 | ??2.52 | ??75/25 | ??2.92 | ??3.17 | ??0.88 | ??70 | ??0.44 | ??0.38 | ??13.64 |
On (110) strontium titanates substrate, adopting sputtering method epitaxial growth thickness is the platinum of 10nm, (110) planar orientation, as lower electrode.On lower electrode, adopt the lead zirconate titanate of RF magnetron bombardment method by above-mentioned membrance casting condition epitaxial growth (110) planar orientation, be the deielectric-coating of 10nm as thickness.Table 17 shows the elemental ratio of thickness, zirconium and the titanium of deielectric-coating, the result that X-ray diffraction is measured.On deielectric-coating, adopt the platinum of sputtering method film forming thickness 10nm, as upper electrode, finish the deielectric-coating constituting body.Utilize this to carry out withstand voltage test.Apply voltage and be up to 1V, do not produce leakage current, no resistance to pressure problem.
Table 17
| Embodiment | Thickness (μ m) | The Zr/Ti ratio | ??C 110 | ??W 110(°) | ??C 001 | ??W 001(°) | ??w | C n110/C 110(％) | ??C n001/C 001??(％) |
| ??20 | ??10 | ??68/32 | ??3064 | ??1.12 | ??2180 | ??5.73 | ??7.19 | 0.26 | ??0.31 |
Embodiment 21
Ink-spraying-head shown in following such construction drawing 2A and Fig. 2 B.Fig. 2 A is a perspective view of showing an example of ink-spraying-head of the present invention, and Fig. 2 B is the profile that illustrates along the 2B-2B line intercepting of Fig. 2 A.
Becoming on (100) silicon substrate of fluid passage substrate 201, the strontium titanates tunic of (110) planar orientation by the about 2000nm of its thickness of sputtering method film forming is as oscillating plate 202.With its substrate 203 as deielectric-coating constituting body of the present invention.Position according to form printing ink compression chamber 208 on this strontium titanate layer utilizes mask to carry out composition, with the platinum of sputtering method epitaxial growth (110) planar orientation, forms the lower electrode 204 that thickness is approximately 100nm.On lower electrode 204, utilize mask, by wide 100 μ m, long 5mm composition, by the deielectric-coating 205 of RF magnesium sputtering method with the 0.9PZT-0.1PMN solid solution of above-mentioned membrance casting condition epitaxial growth (110) planar orientation, its pitch with 200dpi on width forms 200.Show the elemental ratio of thickness, zirconium and the titanium of deielectric-coating, the result that X-ray diffraction is measured at table 18.And, on deielectric-coating,, form upper electrode 206 by the platinum of the about 100nm thickness of its thickness of sputtering method film forming.
Pass through reactive ion etching (RIE) from the downside of fluid passage substrate 201, form the path (not shown) of path 210, the public ink chamber of connection and the ink tank of printing ink compression chamber 208, public ink chamber 209, connection printing ink compression chamber and public ink chamber.Next, on another silicon substrate 211, utilize reactive ion etching (RIE), with the pitch formation nozzle 212 of 200dpi, as nozzle plate 211 corresponding to each printing ink compression chamber 208.Shown in Fig. 2 A and Fig. 2 B,, finish ink-spraying-head in conjunction with fluid passage substrate 201 and nozzle plate 211.
Adopt this ink-spraying-head, carry out jet test.Affirmation can be sprayed the droplets of ink of 13pl with the jet velocity of 13.8m/sec, can obtain enough jet velocities.
Table 18
| Embodiment | Thickness (μ m) | The Zr/Ti ratio | ??C 110 | ??W 110(°) | ??C 001 | ??W 001(°) | ??w | ??C n110/C 110??(％) | ??C n001/C 001??(％) |
| ??21 | ??2.21 | ??65/35 | ??2972 | ??1.21 | ??1815 | ??5.27 | ??7.13 | ??0.31 | ??0.44 |
Claims (15)
1, a kind of deielectric-coating constituting body has substrate and the deielectric-coating that is arranged on this substrate, it is characterized in that:
Deielectric-coating has (00l) planar orientation with respect to this substrate, and this deielectric-coating represents that by following formula (1) wherein u is the real number greater than 2:
u＝(C
c/C
a)×(W
a/W
c)????......??(1)
In above-mentioned formula (1),
C
cBe the counting of peak value of (00l ') face of the deielectric-coating measured of the outer X-ray diffraction of face, at this, l ' is for making C
cThe natural number of selecting during for maximum;
C
aBe the counting of peak value of (h ' 00) face of the deielectric-coating measured of face internal X-ray diffraction, at this h ' for making C
cThe natural number of selecting during for maximum;
W
cIt is the half breadth of peak value of (00l ') face of the deielectric-coating measured of the outer curve of cyclical fluctuations X-ray diffraction of face;
W
aIt is the half breadth of the peak value of (h ' 00) face of the deielectric-coating of curve of cyclical fluctuations X-ray diffraction mensuration in the face.
2, deielectric-coating constituting body according to claim 1, wherein, above-mentioned deielectric-coating is measured by the outer X-ray diffraction of face, (00l) counting of the face outside the face is below 10% or 10% of counting of (00l ') face, and measure by face internal X-ray diffraction, (h00) counting of the face outside the face is below 10% or 10% of counting of (h ' 00) face, at this, h and l are natural number arbitrarily, l ' is the maximum natural number of choosing for the peak counting of (00l ') face of making that X-ray diffraction face outside measures, and h ' is the natural number that maximum is chosen for the peak counting of (h ' 00) face of making face internal X-ray diffraction and measuring.
3, deielectric-coating constituting body according to claim 1, wherein, the thickness of above-mentioned deielectric-coating is more than or equal to 10nm and is less than or equal to 20 μ m.
4, according to the deielectric-coating constituting body described in the claim 1, wherein, the crystal structure of above-mentioned deielectric-coating is a cubic crystal.
5, a kind of deielectric-coating constituting body has substrate and the deielectric-coating that is arranged on this substrate, it is characterized in that:
This deielectric-coating has (111) planar orientation with respect to this substrate, and this deielectric-coating represents that by following formula (2) wherein v is the real number greater than 2:
v＝(C
111/C
-110)×(W
-110/W
111)??......??(2)
In above-mentioned formula (2),
C
111It is the counting of the peak value of (111) face of the deielectric-coating of X-ray diffraction mensuration outside the face;
C
-110It is the counting of peak value of (110) face of the deielectric-coating measured of face internal X-ray diffraction;
W
111It is the half breadth of the peak value of (111) face of the deielectric-coating of curve of cyclical fluctuations X-ray diffraction mensuration outside the face;
W
-110It is the half breadth of the peak value of (110) face of the deielectric-coating of curve of cyclical fluctuations X-ray diffraction mensuration in the face.
6, deielectric-coating constituting body according to claim 5, wherein, above-mentioned deielectric-coating is measured by the outer X-ray diffraction of face, the counting that is not parallel to the face of (111) face is below 10% or 10% of counting of (111) face, and measure by face internal X-ray diffraction, be not parallel to that { counting of the face of 110} face is below 10% or 10% of counting of (110) face.
7, deielectric-coating constituting body according to claim 5, wherein, the crystal structure of above-mentioned deielectric-coating is the rhombohedron crystal.
8, a kind of deielectric-coating constituting body has substrate and the deielectric-coating that is arranged on this substrate, it is characterized in that:
This deielectric-coating has (110) planar orientation with respect to this substrate, and this deielectric-coating represents that by following formula (3) wherein w is the real number greater than 2:
w＝(C
110/C
00m)×(W
00m/W
110)......??(3)
In above-mentioned formula (3),
C
110It is the counting of the peak value of (110) face of the deielectric-coating of X-ray diffraction mensuration outside the face;
C
00mBe the counting of peak value of (00m) face of the deielectric-coating measured of face internal X-ray diffraction, at this, m is for making C
00mBe the selected natural number of maximum;
W
110It is the half breadth of the peak value of (110) face of the deielectric-coating of curve of cyclical fluctuations X-ray diffraction mensuration outside the face;
W
00mIt is the half breadth of the peak value of (00m) face of the deielectric-coating of curve of cyclical fluctuations X-ray diffraction mensuration in the face.
9, the deielectric-coating constituting body described in according to Claim 8, wherein, above-mentioned deielectric-coating is measured by the outer X-ray diffraction of face, the counting that is not parallel to the face of (110) face is below 10% or 10% of counting of (110) face, and measure by face internal X-ray diffraction, be not parallel to that { counting of the face of 110} face is below 10% or 10% of counting of (110) face.
10, a kind of piezo-activator is characterized in that, has the described deielectric-coating constituting body of claim 1 and is used for voltage is applied to electrode on this deielectric-coating constituting body.
11, a kind of piezo-activator is characterized in that, has the described deielectric-coating constituting body of claim 5 and is used for voltage is applied to electrode on this deielectric-coating constituting body.
12, a kind of piezo-activator is characterized in that, has the described deielectric-coating constituting body of claim 8 and is used for voltage is applied to electrode on this deielectric-coating constituting body.
13, a kind of ink-spraying-head is characterized in that, possesses: have described deielectric-coating constituting body of claim 1 and the piezo-activator that is used for voltage is applied to the electrode on this deielectric-coating constituting body, drive this piezo-activator and come ink jet.
14, a kind of ink-spraying-head is characterized in that, possesses: have the described deielectric-coating constituting body of claim 5 and be used for voltage is revolved the piezo-activator that is added to the electrode on this deielectric-coating constituting body, drive this piezo-activator and come ink jet.
15, a kind of ink-spraying-head is characterized in that, possesses: have described deielectric-coating constituting body of claim 8 and the piezo-activator that is used for voltage is applied to the electrode on this deielectric-coating constituting body, drive this piezo-activator and come ink jet.
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| JP031682/2003 | 2003-02-07 | ||
| JP2003031682 | 2003-02-07 | ||
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| EP (1) | EP1445354B1 (en) |
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| US3946398A (en) * | 1970-06-29 | 1976-03-23 | Silonics, Inc. | Method and apparatus for recording with writing fluids and drop projection means therefor |
| JPS5912828B2 (en) | 1976-07-19 | 1984-03-26 | 株式会社大林組 | Column/beam joint of reinforced concrete structural frame |
| JPS5511811A (en) | 1978-07-10 | 1980-01-28 | Seiko Epson Corp | Liquid jet device |
| EP0095911B1 (en) * | 1982-05-28 | 1989-01-18 | Xerox Corporation | Pressure pulse droplet ejector and array |
| JPS6222790A (en) | 1985-07-24 | 1987-01-30 | Shin Etsu Chem Co Ltd | Production of tertiary hydrocarbonsilyl compound |
| US4825227A (en) * | 1988-02-29 | 1989-04-25 | Spectra, Inc. | Shear mode transducer for ink jet systems |
| US5265315A (en) * | 1990-11-20 | 1993-11-30 | Spectra, Inc. | Method of making a thin-film transducer ink jet head |
| DE4304938C2 (en) | 1993-02-18 | 1996-04-25 | Daimler Benz Ag | Multi-axis goniometer |
| JP3341357B2 (en) | 1993-06-08 | 2002-11-05 | セイコーエプソン株式会社 | Piezoelectric thin film element |
| JPH0733089A (en) | 1993-07-21 | 1995-02-03 | Mitsubishi Heavy Ind Ltd | Main wing integrally formed of compound material |
| KR0147245B1 (en) * | 1993-12-01 | 1998-09-15 | 모리시타 요이찌 | Fero electric thin film and manufacture thereof |
| US6296701B1 (en) * | 1998-09-30 | 2001-10-02 | Ut-Battelle, Llc | Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom |
| DE69931526T2 (en) | 1999-12-10 | 2007-04-26 | Fuji Photo Film Co., Ltd., Minami-Ashigara | INK JET PRINT HEAD, METHOD FOR PRODUCING PRINT HEADS AND PRINTER |
| JP3796394B2 (en) * | 2000-06-21 | 2006-07-12 | キヤノン株式会社 | Method for manufacturing piezoelectric element and method for manufacturing liquid jet recording head |
| US6783588B2 (en) * | 2000-12-15 | 2004-08-31 | Canon Kabushiki Kaisha | BaTiO3-PbTiO3 series single crystal and method of manufacturing the same piezoelectric type actuator and liquid discharge head using such piezoelectric type actuator |
| JP3833070B2 (en) * | 2001-02-09 | 2006-10-11 | キヤノン株式会社 | Liquid ejecting head and manufacturing method |
| JP3754897B2 (en) * | 2001-02-09 | 2006-03-15 | キヤノン株式会社 | Semiconductor device substrate and method for manufacturing SOI substrate |
| KR200286461Y1 (en) | 2002-01-28 | 2002-08-22 | 윤상범 | magnet receipt pencil vase |
| JP4086535B2 (en) * | 2002-04-18 | 2008-05-14 | キヤノン株式会社 | Actuator and inkjet head manufacturing method |
| JP4708667B2 (en) | 2002-08-08 | 2011-06-22 | キヤノン株式会社 | Actuator and liquid jet head |
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2004
- 2004-02-03 US US10/769,765 patent/US7059711B2/en not_active Expired - Fee Related
- 2004-02-05 DE DE200460022728 patent/DE602004022728D1/en not_active Expired - Lifetime
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- 2004-02-06 KR KR1020040007794A patent/KR100651046B1/en not_active IP Right Cessation
- 2004-02-06 CN CNB2004100387650A patent/CN100469577C/en not_active Expired - Fee Related
- 2004-02-06 JP JP2004031240A patent/JP4208734B2/en not_active Expired - Fee Related
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114062406A (en) * | 2022-01-04 | 2022-02-18 | 中国工程物理研究院流体物理研究所 | Time-resolved polycrystalline X-ray diffraction target device |
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| US20060176342A1 (en) | 2006-08-10 |
| US7938515B2 (en) | 2011-05-10 |
| EP1445354A2 (en) | 2004-08-11 |
| US20040207695A1 (en) | 2004-10-21 |
| CN100469577C (en) | 2009-03-18 |
| DE602004022728D1 (en) | 2009-10-08 |
| KR100651046B1 (en) | 2006-12-01 |
| EP1445354A3 (en) | 2005-10-19 |
| RU2004103554A (en) | 2005-07-27 |
| US20090153626A1 (en) | 2009-06-18 |
| RU2335826C2 (en) | 2008-10-10 |
| KR20040072052A (en) | 2004-08-16 |
| US7513608B2 (en) | 2009-04-07 |
| US7059711B2 (en) | 2006-06-13 |
| JP4208734B2 (en) | 2009-01-14 |
| JP2004260158A (en) | 2004-09-16 |
| EP1445354B1 (en) | 2009-08-26 |
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