CN1529328A - Polymer PTC thermistor and manufacturing method thereof - Google Patents
Polymer PTC thermistor and manufacturing method thereof Download PDFInfo
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- CN1529328A CN1529328A CNA2003101078077A CN200310107807A CN1529328A CN 1529328 A CN1529328 A CN 1529328A CN A2003101078077 A CNA2003101078077 A CN A2003101078077A CN 200310107807 A CN200310107807 A CN 200310107807A CN 1529328 A CN1529328 A CN 1529328A
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- ptc thermistor
- ptc
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Abstract
Composite material of conduction high polymer is as main material of high polymer PTC thermistor. PTC thermistor comprises core material and metal electrodes adhibited on two surfaces of core material. Composed multiple layers of chips possessing PTC characters constitutes core material of thermistor. Method for manufacturing PTC thermistor includes steps: piling up multiple layers of chips possessing PTC characters to produce composed chip; then, metal electrodes are adhibited on two surfaces of core material; cutting PTC thermistor according to required size. In the invention, major types of PTC thermistor are made from lesser PTC material formula under fixed outline size of product relatively. The invented PTC thermistor is applicable to areas of communication, computer, industrial control and household electrical appliances.
Description
Technical field
The present invention relates to a kind of is the electronic devices and components that primary raw material is made by conducting high polymers thing composite material, especially relates to a kind of high molecular PTC thermistor and manufacture method thereof with composite core material.
Background technology
The crystallization of filled conductive particle or hypocrystalline polymer composite can show positive temperature coefficient PTC (positive temperature coefficient) phenomenon.That is to say that in certain temperature range, the resistivity of self can increase with the rising of temperature.These class conduction private savings with ptc characteristics are made thermistor, are applied to the overcurrent protection of circuit.In the normal state; electric current in the circuit is less relatively; the thermistor actuator temperature is lower; and when the big electric current that is caused by fault passes through this thermistor; its temperature can be elevated to " shutoff " temperature suddenly; cause its resistance value to become very big, so just make circuit be in a kind of approximate " open circuit " state, thereby protected other elements in the circuit.And after fault was got rid of, the temperature of thermistor descended, and its resistance value can comparatively fast return to the low resistance state again.High molecular PTC thermistor has been widely applied in the various fields such as communication, computer, automobile, Industry Control, household electrical appliance.
Usually the core of high molecular PTC thermistor is so-called " sandwich " structure, i.e. double layer of metal paillon foil electrode holder one deck high molecular PTC material chip.Because the resistance value of the resistance value of high molecular PTC material chip decision thermistor, therefore, in the manufacturing process of high molecular PTC thermistor, because the overall dimension relative fixed of product, in order to obtain the product of different resistance values, need the high molecular PTC material chip of the corresponding resistance value of preparation, that is to say that each product all needs a kind of high molecular PTC material prescription of correspondence.When product type more for a long time, the high molecular PTC material prescription that needs is more, makes troubles to actual production.
Summary of the invention
Purpose of the present invention is exactly in order to overcome the deficiency that above-mentioned technology exists, a kind of high molecular PTC thermistor with composite core material to be provided.
Another object of the present invention provides this manufacture method with high molecular PTC thermistor of composite core material.
Technical scheme of the present invention is: a kind of high molecular PTC thermistor with composite core material, by core and paste at the metal electrode on core two sides and the lead-in wire that is connected with metal electrode and constitute, wherein the core of high molecular PTC thermistor has the chip-stack compacting of ptc characteristics by multilayer and constitutes, and multilayer have the prescription of the chip of ptc characteristics can be identical or part is identical also can be different.
Described chip is scattered in to suppress on the positive temperature coefficient polymer that polymer forms by conductive filler and forms, and wherein, polymer is polyethylene, polypropylene, polyvinyl fluoride and composition thereof or copolymer.
Described conductive filler is metallic, carbon black and composition thereof.
Described electric conduction electrode-plate is selected from the paillon foil of a kind of or its alloy in copper, nickel, the gold, silver.
The core of this high molecular PTC thermistor is had by multilayer that the chip-stack of ptc characteristics is compound to be constituted, can be by the proportion of chip in core chips sum of control different formulations, regulate the resistance value of core, thereby obtain the high molecular PTC thermistor of multiple model.
High molecular PTC thermistor manufacture method of the present invention is that the chip stack that multilayer has a ptc characteristics is pressed into composite core material, paste metal electrode on the composite core material two sides then, cut into the size of requirement, and promptly obtain high molecular PTC thermistor at electrode two ends connection lead-in wire.
Compared with prior art, the present invention has adopted above-described production method, has realized the compound novel structure of high molecular PTC thermistor chip-stack, is produced than the polytypic high molecular PTC thermistor by less high molecular PTC material prescription, production technology is simple, reduces production costs.
Embodiment
Embodiment 1
Is that 5 Ω cm high polymer PTC chip A are pressed into the composite core material that thickness is 2.0mm with 4 layer thicknesses for 0.5mm resistivity, paste the metal nickel foil on the composite core material two sides then, cut into the small pieces that size is 5mm*5mm, and, promptly obtain the high molecular PTC thermistor that resistance value is 4 Ω at electrode two ends connection lead-in wire.
Embodiment 2
Is that 5 Ω .cm high polymer PTC chip A and 1 layer thickness are that 25 Ω .cm high polymer PTC chip B are pressed into the composite core material that thickness is 2.0mm for 0.5mm resistivity with 3 layer thicknesses for 0.5mm resistivity, paste the metal nickel foil on the composite core material two sides then, cut into the small pieces that size is 5mm*5mm, and, promptly obtain the high molecular PTC thermistor that resistance value is 8 Ω at electrode two ends connection lead-in wire.
Embodiment 3
Is that 5 Ω .cm high polymer PTC chip A and 2 layer thicknesses are that 25 Ω .cm high polymer PTC chip B are pressed into the composite core material that thickness is 2.0mm for 0.5mm resistivity with 2 layer thicknesses for 0.5mm resistivity, paste the metal nickel foil on the composite core material two sides then, cut into the small pieces that size is 5mm*5mm, and, promptly obtain the high molecular PTC thermistor that resistance value is 12 Ω at electrode two ends connection lead-in wire.
Embodiment 4
Is that 5 Ω .cm high polymer PTC chip A and 3 layer thicknesses are that 25 Ω .cm high polymer PTC chip B are pressed into the composite core material that thickness is 2.0mm for 0.5mm resistivity with 1 layer thickness for 0.5mm resistivity, paste the metal nickel foil on the composite core material two sides then, cut into the small pieces that size is 5mm*5mm, and, promptly obtain the high molecular PTC thermistor that resistance value is 16 Ω at electrode two ends connection lead-in wire.
Embodiment 5
Is that 25 Ω .cm high polymer PTC chip B are pressed into the composite core material that thickness is 2.0mm with 4 layer thicknesses for 0.5mm resistivity, paste the metal nickel foil on the composite core material two sides then, cut into the small pieces that size is 5mm*5mm, and, promptly obtain the high molecular PTC thermistor that resistance value is 20 Ω at electrode two ends connection lead-in wire.
Claims (6)
1, a kind of high molecular PTC thermistor with composite core material, by composite core material, paste at the metal electrode on core two sides and the lead-in wire that is connected with metal electrode and constitute, it is characterized in that described composite core material constitutes by the macromolecule chip-stack that has ptc characteristics more than two-layer or two-layer is compound.
2, a kind of high molecular PTC thermistor according to claim 1 with composite core material, it is characterized in that described macromolecule chip with ptc characteristics is scattered in the composite material compacting with ptc characteristics that polymer forms by conductive filler and forms, wherein, polymer is the mixture or the copolymer of two or three in polyethylene, polypropylene, the polyvinyl fluoride.
3, a kind of high molecular PTC thermistor with compound chip according to claim 1 and 2 is characterized in that the described macromolecule chip prescription that has ptc characteristics more than two-layer or two-layer is identical or part is identical.
4, a kind of high molecular PTC thermistor with composite core material according to claim 1 and 2 is characterized in that the described prescription that has the macromolecule chip of ptc characteristics more than two-layer or two-layer is inequality.
5, a kind of high molecular PTC thermistor with composite core material according to claim 1 is characterized in that described metal electrode is selected from the paillon foil of a kind of or its alloy in copper, nickel, the gold, silver.
6, according to the described a kind of high molecular PTC thermistor of any claim in the claim 1,2,3,4 or 5 with composite core material, its manufacture method is: the chip that multilayer is had ptc characteristics is pressed into composite core material, paste metal electrode on the composite core material two sides then, cut into and require size, connect lead-in wire then at the electrode two ends and make high molecular PTC thermistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2003101078077A CN1529328A (en) | 2003-10-01 | 2003-10-01 | Polymer PTC thermistor and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2003101078077A CN1529328A (en) | 2003-10-01 | 2003-10-01 | Polymer PTC thermistor and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN1529328A true CN1529328A (en) | 2004-09-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CNA2003101078077A Pending CN1529328A (en) | 2003-10-01 | 2003-10-01 | Polymer PTC thermistor and manufacturing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101326596B (en) * | 2005-12-09 | 2013-03-13 | 泰科电子雷伊化学株式会社 | Method for manufacturing PTC device |
| CN111029066A (en) * | 2018-10-09 | 2020-04-17 | 富致科技股份有限公司 | Overcurrent protection device |
-
2003
- 2003-10-01 CN CNA2003101078077A patent/CN1529328A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101326596B (en) * | 2005-12-09 | 2013-03-13 | 泰科电子雷伊化学株式会社 | Method for manufacturing PTC device |
| CN111029066A (en) * | 2018-10-09 | 2020-04-17 | 富致科技股份有限公司 | Overcurrent protection device |
| CN111029066B (en) * | 2018-10-09 | 2022-04-12 | 富致科技股份有限公司 | Overcurrent protection device |
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