CN1522952A - Method and apparatus for preparing metal nanostructured material in all-solid-state environment - Google Patents
Method and apparatus for preparing metal nanostructured material in all-solid-state environment Download PDFInfo
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- CN1522952A CN1522952A CNA031048781A CN03104878A CN1522952A CN 1522952 A CN1522952 A CN 1522952A CN A031048781 A CNA031048781 A CN A031048781A CN 03104878 A CN03104878 A CN 03104878A CN 1522952 A CN1522952 A CN 1522952A
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- metal
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- anode
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 75
- 239000002184 metal Substances 0.000 title claims abstract description 75
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000005684 electric field Effects 0.000 claims abstract description 17
- 238000002360 preparation method Methods 0.000 claims abstract description 16
- 239000012528 membrane Substances 0.000 claims abstract description 14
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 13
- 239000007787 solid Substances 0.000 claims abstract description 12
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 5
- 239000011780 sodium chloride Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 32
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 150000001768 cations Chemical class 0.000 description 6
- 238000001000 micrograph Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 239000010944 silver (metal) Substances 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229920000742 Cotton Polymers 0.000 description 2
- 230000005685 electric field effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000009941 weaving Methods 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 241000555268 Dendroides Species 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
The present invention relates to a method for preparing metal nano structure material under the condition of complete solid environment and its equipment, belonging to the field of nano material preparation technology. Said equipment includes DC power supply, substrate and metal ion conducting membrane deposited on its substrate, metal anode and metal cathode. Said method is characterized by that under the condition of complete solid environment and having no any template and in the normal temp., normal pressure and atmospheric environment it utilizes the metal ion conducting membrane deposited on the substrate to prepare metal nano structure material with different forms under the control of external electric field.
Description
Technical field
The invention belongs to the nano material preparation technical field, particularly a kind of preparation has the method and the device of the metal Nano structure material of complex surface pattern.
Background technology
[see document J.J.Zhu, S.W.Liu, O.Palchik, andet al., Langmuir, 16 (2000) 6396-6399 about the existing many pieces of bibliographical informations of the preparation of metal nano material; S.H.Chen, Z.Y.Fan, D.L.Carroll, J.Phys.Chem.B., 106 (42) 10777-10781; B.H.Hong, S.C.Bae, C.W.Lee, and et al., Science, 294 (2001) 348-351; P.K.Mukherjee and D.Chakravorty, J.Mater.Res., 17 (2002) 3127-3132; J.Zhang, X.Wang, X.Peng, and et al., Applied Physics A, 75 (2002) 485-488; G.J.Chi, S.W.Yao, J.Fan and et al., Acta Physico-Chimica Sinica, 18 (2002) 532-535; M.Barbic, J.J.Mock, D.R.Smith and et al., J.Appl.Phys., 91 (2002) 9341-9345; S.Bhattachryya, S.K.Saha, D.Chakravorty, Appl.Phys.Lett., 77 (2000) 3770-3772; Y.Zhou, S.H.Yu, X.P.Cui and et al., Chemistry of Materials, 11 (1999) 545-549], disclosed these materials comprise nano particle arrangement, nano wire, nanometer rods, the nanotube of rule in the above-mentioned document, and irregular nanometer plate, nanotrees etc., conclude solution-deposition method that mostly its metal nano material be to adopt template and utilize metal ion prepares.
Summary of the invention
The purpose of this invention is to provide the method and the device that prepare the metal Nano structure material under a kind of all solid state environment, promptly at all solid state environment and do not have under the condition of any template, in normal temperature, normal pressure and atmosphere, prepare metal nano material with complex surface pattern by the extra electric field that changes the metal ion conductive film.
Technical scheme of the present invention is as follows:
A kind of all solid state environment is the device of preparation metal Nano structure material down, it is characterized in that: this device comprises dc source, substrate and be deposited on its on-chip metal ion conducting film, metal anode and metallic cathode, described metal anode is to be deposited on substrate one end and identical with the metal nano material that will prepare metal film, and described metallic cathode is to be deposited on the substrate other end and the identical or different metal film of metal anode.
A kind of all solid state environment prepares the method for metal nano material down, it is characterized in that this method comprises the steps:
(1) ion-conducting membrane with the metal nano material that will prepare is deposited on the substrate, then at an end of the substrate deposition metal film identical with the metal nano material that will prepare as anode, and at the metal film that the other end deposits and metal anode is identical or different of substrate as negative electrode; Perhaps at first plated metal anode and negative electrode on substrate, and then the ion-conducting membrane of the deposition metal nano material that will prepare thereon;
(2) apply applying direct current electric field at two interpolars, electric-field intensity is 3000～11000 volts/meter.
Substrate of the present invention adopts monocrystalline sodium chloride.
Mechanism of the present invention is: under the extra electric field effect, metallic atom in the anode metal film can lose electronics and become cation, and it can move to negative electrode by ion-conducting membrane, metal cation can obtain electron reduction and becomes metallic atom and form nucleus at cathode surface on negative electrode, and then other metal cation subsequently and extremely can constantly pile up on nuclear and grow up gradually, and forms the nanostructured with different surfaces pattern by the anode metal atomic building.Experiment shows: the pattern of metal Nano structure is to be determined by the electric field between the two poles of the earth.
The present invention proposes a kind of and the new method diverse preparation metal nano material of prior art, promptly adopt under all solid state environment, and in normal temperature, normal pressure and the air atmosphere, and do not have under the situation of any template, utilize the metal ion conducting film to prepare under the electric field controls outside and have various difform metal nano materials, it is simple to have method, the advantage of easy operating.
Description of drawings
Fig. 1 a, 1b are the structural representations of experimental provision of the present invention.
Fig. 2 is the scanning electron microscope image that utilizes the foliaceous argent nano structural material that the present invention prepares, and field intensity is 3300 volts/meter.
Fig. 3 is the scanning electron microscope image that utilizes the net metal silver nanostructured material that the present invention prepares, and field intensity is 7500 volts/meter.
Fig. 4 is the scanning electron microscope image that utilizes the dendritic metal silver nanostructured material that the present invention prepares, and field intensity is 9000 volts/meter.
Fig. 5 is the scanning electron microscope image that utilizes the shape argent nano structural material of weaving cotton cloth that the present invention prepares, and field intensity is 11000 volts/meter.
Fig. 6 is the scanning electron microscope image that utilizes the polybrochate metallic copper nano structural material that the present invention prepares, and field intensity is 10000 volts/meter.
The specific embodiment
Further specify the present invention below in conjunction with drawings and Examples and specifically implement, understand the present invention with further.
Shown in Fig. 1 a, 1b, device of the present invention can adopt two kinds of frame modes, and this device comprises substrate 1, metal anode 2, metal ion conducting film 3, metallic cathode 4, dc source 5.
The prerequisite of preparation metal nano material is to prepare the conducting film of this metal ion, just can conduct the conductive film deposits of this metal ion on substrate, deposit the metal film identical as anode at the one end again with the metal Nano structure material that will prepare, and at the identical or different metal film of other end deposition and anode metal as negative electrode, and make the two poles of the earth be connected (as shown in Figure 1a) with negative pole with the corresponding positive pole of dc source respectively.Certainly, also can adopt the scheme of Fig. 1 b, i.e. at first plated metal anode and negative electrode on substrate, and then deposit required metal ion conducting film thereon.Like this, under the extra electric field effect, metallic atom in the anode metal film can lose electronics and become cation, and it can move to negative electrode by ion-conducting membrane, can obtain electron reduction at the cathodic metal cation becomes metallic atom and forms nucleus at cathode surface, and then other metal cation subsequently and extremely can constantly pile up on nuclear and grow up gradually, and forms the nano structural material with different surfaces pattern by the anode metal atomic building.Experiment shows: the pattern of metal Nano structure material is to be determined by the electric field between the two poles of the earth.
When preparation argent nano structural material, we select monocrystalline sodium chloride to make substrate, and anode is fine silver film or elargol film, and negative electrode is silverskin, copper film or aluminium film, and the silver ion conducting film is K
xRb
1-xAg
4I
5(x=0 ~ 1), extra electric field intensity are 3000～11000 volts/meter.
When preparation metallic copper nano structural material, we select monocrystalline sodium chloride to make substrate, and anode is the fine copper film, and negative electrode is silverskin, copper film or aluminium film, and the copper ion conducting film is RbCu
4Cl
3I
2, extra electric field intensity is 2000～10000 volts/meter.
Certainly, preparation for other metal Nano structure material, also have its ion conductive material as metals such as lithium, zinc, so preparation facilities of the present invention and method are the preparations that generally is applicable to various metal nano materials, its key point is to utilize this metal ion conductive material to make film.
About conducting film of required metal ion and preparation method thereof, open in detail in following document: " V.K.Miloslavsky, O.N.Yunakova and
J.L.Sun.Exciton spectrum in superionic RbAg
4I
5Conductor, Funct.Mater.1994,1,51-55 "; " В. К. М и л о с л а в с к и й и
Ц. Л. С у н ъ. О п т и ч e с к и й с п e к т р и з к с и т о н ы в с у п e р и о н н о м п р о в о д н и к e К Ag
4I
5, Ф у н к ц. and М а т e р .1995,2,438-440 "; " V.K.Miloslavskii, E.N.Kovalenko and O.N.Yunakova.Absorption spectrumand excitons in thin films of the solid electrolyte RbCu
4Cl
3I
2, Phys.Solid State, 1998,40,934-937 "; "
J.L.Sun, G.Y.Tian, Y.Cao and et al..Phase transition andtemperature dependence of the A
1Low-frequency exciton band parameters in quaternarycompound Rb
0.5Cs
0.5Ag
4I
5Thin films, Chin.Phys.Lett., 2002,19,1326-1328 ".
In addition, the inventor was 02121109.4 at application number once, and name is called " preparation method of a kind of solid dielectric crystalline material and crystal film thereof " and equally the preparation method of conductive metal film is illustrated.
Embodiment 1
Selecting anode is the metal silverskin, and negative electrode is an aluminium film, and ion-conducting membrane is K
0.75Rb
0.25Ag
4I
5, extra electric field is 3300 volts/meter, obtaining the argent nano structural material is foliaceous (Fig. 2).
Embodiment 2
Selecting anode is the metal silverskin, and negative electrode is the metal silverskin, and ion-conducting membrane is RbAg
4I
5, extra electric field intensity is 7500 volts/meter, obtaining the argent nano structural material is netted (Fig. 3).
Selecting anode is the elargol film, and negative electrode is the metal copper film, and ion-conducting membrane is RbAg
4I
5, extra electric field intensity is 9000 volts/meter, obtaining the argent nano structural material is dendroid (Fig. 4).
Selecting anode is the metal silverskin, and negative electrode is the metal silverskin, and ion-conducting membrane is K
0.5Rb
0.5Ag
4I
5, extra electric field intensity is 11000 volts/meter, obtains the argent nano structural material and is the shape of weaving cotton cloth (Fig. 5).
Embodiment 5
Selecting anode is the metal copper film, and negative electrode is the metal silverskin, and ion-conducting membrane is RbCu
4Cl
3I
2, extra electric field intensity is 10000 volts/meter, obtaining the metallic copper nano structural material is polybrochate (Fig. 6).
For obtaining various metal Nano structure material, its extra electric field intensity optimum value is greater than 3000 volts/meter and less than the breakdown field strength of ion-conducting membrane.
Claims (3)
1. all solid state environment device of preparation metal Nano structure material down, it is characterized in that: this device comprises dc source, substrate and be deposited on its on-chip metal ion conducting film, metal anode and metallic cathode, described metal anode is to be deposited on substrate one end and identical with the metal nano material that will prepare metal film, and described metallic cathode is to be deposited on the substrate other end and the identical or different metal film of metal anode.
2. adopt the method for preparing the metal Nano structure material apparatus under all solid state environment as claimed in claim 1, it is characterized in that this method comprises the steps:
(1) ion-conducting membrane with the metal Nano structure material that will prepare is deposited on the substrate, then at an end of the substrate deposition metal film identical with the metal Nano structure material that will prepare as anode, and at the metal film that the other end deposits and metal anode is identical or different of substrate as negative electrode; Perhaps at first plated metal anode and negative electrode on substrate, and then the ion-conducting membrane of the deposition metal nano material that will prepare thereon;
(2) apply applying direct current electric field at two interpolars, electric-field intensity is 3000～11000 volts/meter.
3. in accordance with the method for claim 2, it is characterized in that described substrate monocrystalline sodium chloride.
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| CN 03104878 CN1251963C (en) | 2003-02-21 | 2003-02-21 | Method and apparatus for preparing metal nanostructured material in all-solid-state environment |
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|---|---|---|---|
| CN 03104878 CN1251963C (en) | 2003-02-21 | 2003-02-21 | Method and apparatus for preparing metal nanostructured material in all-solid-state environment |
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| Publication Number | Publication Date |
|---|---|
| CN1522952A true CN1522952A (en) | 2004-08-25 |
| CN1251963C CN1251963C (en) | 2006-04-19 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1326808C (en) * | 2005-07-22 | 2007-07-18 | 林继房 | Long-effective holly soluble phosphate fertilizer |
| CN108842135A (en) * | 2018-06-15 | 2018-11-20 | 西安工业大学 | The preparation method of dendroid silver nano line array |
-
2003
- 2003-02-21 CN CN 03104878 patent/CN1251963C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1326808C (en) * | 2005-07-22 | 2007-07-18 | 林继房 | Long-effective holly soluble phosphate fertilizer |
| CN108842135A (en) * | 2018-06-15 | 2018-11-20 | 西安工业大学 | The preparation method of dendroid silver nano line array |
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| Publication number | Publication date |
|---|---|
| CN1251963C (en) | 2006-04-19 |
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Granted publication date: 20060419 |