CN1510477A - Liquid crystal displaying devices - Google Patents

Liquid crystal displaying devices Download PDF

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Publication number
CN1510477A
CN1510477A CNA021584176A CN02158417A CN1510477A CN 1510477 A CN1510477 A CN 1510477A CN A021584176 A CNA021584176 A CN A021584176A CN 02158417 A CN02158417 A CN 02158417A CN 1510477 A CN1510477 A CN 1510477A
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China
Prior art keywords
liquid crystal
crystal indicator
electrode
colored filter
insulation course
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Granted
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CNA021584176A
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Chinese (zh)
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CN100458511C (en
Inventor
张世昌
蔡耀铭
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TPO Displays Corp
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Toppoly Optoelectronics Corp
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Priority to CNB021584176A priority Critical patent/CN100458511C/en
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Publication of CN100458511C publication Critical patent/CN100458511C/en
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Abstract

A liquid crystal display unit can realize optimization of contrast ratio and degree of saturation for penetration region and reflection region on colour liquid crystal display by adjusting thickness of colour filter for two transparent base plates at top and bottom. It comprises the first base plate with multifilm transistor for limiting reflection and penetration region, an insulation layer on the first base plate, the first colour filter on the insulation layer, a padded high insulation layer on part of the first colour filter, the first electrode covering the padded high insulation layer and part of the first colour filter, a liquid crystal layer on the first electrode, the second colour filter, the secone electrode and the second base plate.

Description

Liquid crystal indicator
Technical field
The present invention relates to a kind of liquid crystal indicator, the liquid crystal indicator that particularly relates to a kind of semi-penetration, semi-reflective, by colored filter (color filter) thickness of adjusting upper and lower two transparency carriers, with penetration region that reaches colour liquid crystal display device and contrast ratio and the color saturation optimization that reflector space was presented.
Background technology
Color liquid crystal display panel comprises that two transparency carriers and place the liquid crystal layer between this each transparency carrier.Generally speaking, in the panel of thin film transistor (TFT) (TFT:Thin Film Transistor) type, colored filter (color filter) only is formed on the transparency carrier in the face of thin film transistor (TFT), and promptly colored filter is positioned on the different transparency carriers with thin film transistor (TFT), and faces each other.
At the colour liquid crystal display device of full penetration or total-reflection type, the distance of passing colored filter because of whole liquid crystal display panel light is all the same, so the color saturation that presents (color saturation) is identical.But the colour liquid crystal display device at semi-penetration, semi-reflective (transflective) please refer to Fig. 1, and when bright and clear, LCD will use extraneous light 111 to be light source, utilize principle of reflection to show (display) in the external world.This moment, light had twice by colored filter 13, so its color saturation is higher.But when extraneous insufficient light, LCD utilizes the light penetration principle to show the own backlight light source of use (BL:BackLight) 121.This moment, light will be only by colored filter 13 once, thus its color saturation and reflective relatively will be lower.
For these reasons, because the colour liquid crystal display device of semi-penetration, semi-reflective adopts penetration and reflective display mode simultaneously, its color saturation will present the problem of difference.The settling mode of the normal employing of those skilled in the art at present is shown in Fig. 2 A and Fig. 2 B.What Fig. 2 A used is that colored filter is in penetrating region and echo area difference in thickness method.Fig. 2 A left side is echo area 21, and Fig. 2 A the right then is a penetrating region 22.When the external world is bright and clear, LCD will use extraneous light 211 to be light source, so the time be to utilize the light source 211 of echo area by behind the colored filter 212, via the reflective electrodes reflects on the bed hedgehopping insulation course 213 of echo area 21.Because of the surface design of insulation course 213 has projection (bump) shape, so the effect of scattering is arranged many reflection rays 214 appear.This moment, reflection ray 214 was through showing by colored filter 212 backs once more behind the liquid crystal layer 23.But when extraneous insufficient light, LCD utilizes light 221 to show through liquid crystal layer 23 and by colored filter 222 backs the own backlight light source 221 of use (BL:Back Light).This moment, the thickness t of colored filter 212 will be less than the thickness T of colored filter 222.Utilize the principle of this thickness compensation, can make echo area and penetrating region present approximate color saturation.
Fig. 2 B uses is the colored filter method of digging a hole in the echo area.Fig. 2 B left side is echo area 26, and Fig. 2 B the right then is a penetrating region 27.When the external world is bright and clear, LCD will use extraneous light 261 to be light source, so the time be to utilize the light source 261 of echo area by behind the colored filter 262, via the reflective electrodes reflects of the bed hedgehopping insulation course 263 of echo area.Because of the surface design of insulation course 263 has projection (bump) shape, so the effect of scattering is arranged many reflection rays 264 appear.This moment, reflection ray 264 was through showing by colored filter 262 backs once more behind the liquid crystal layer 28.But when extraneous insufficient light, LCD utilizes light 271 to show through liquid crystal layer 28 and by colored filter 272 backs the light source of the backlight of use (BL:Back Light) own.Have many small holes to be distributed in the colored filter 262 this moment, then do not have any small holes in the colored filter 272.Utilize the small holes of colored filter inside, echo area, can make echo area and penetrating region present approximate color saturation.
No matter be to use the difference in thickness method of colored filter or the small holes method of colored filter inside, all have the problem that two sheet glass substrates need be aimed at.Especially at present each picture element (pixel) is all very little on the colour liquid crystal display device, and echo area and penetrating region on the two sheet glass substrates are aimed at, and is not easy really.If aim at deviation is arranged, promptly the problem that echo area and penetrating region present color saturation difference can occur.
Summary of the invention
In above-mentioned background of invention, the colour liquid crystal display device of existing semi-penetration, semi-reflective in the echo area and penetrating region have the problem of color saturation difference, even adopt the difference in thickness method of colored filter or the small holes method of colored filter inside, also have the echo area of two sheet glass substrates and the problem that penetrating region is aimed at.The invention provides a kind of new liquid crystal indicator, avoid said circumstances to produce.
One object of the present invention is to provide a kind of liquid crystal indicator, by the colored filter of two transparency carriers, to solve the problem that echo area and penetrating region have color saturation difference.
Another purpose of the present invention is to provide a kind of liquid crystal indicator, by the colored filter of two transparency carriers, and the problem of aiming at the echo area that solves two transparency carriers and penetrating region.
According to above-described purpose, the invention provides a kind of liquid crystal indicator, comprising: one first substrate, have a plurality of thin film transistor (TFT)s, can limit echo area and penetrating region; One insulation course is positioned on this first substrate; One first colored filter is positioned on the insulation course; One bed hedgehopping insulation course is positioned on part first colored filter; One first electrode covers bed hedgehopping insulation course and part first colored filter; One liquid crystal layer is positioned on first electrode; One second colored filter is positioned on this liquid crystal layer; One second electrode is positioned on second colored filter; And one second substrate, be positioned on second electrode.
According to above-mentioned conception, wherein first and second substrates are transparency carrier.
According to above-mentioned conception, wherein the material of insulation course is to select from following: silicon dioxide (SiO 2) and silicon nitride (Si 3N 4).
According to above-mentioned conception, wherein the material of bed hedgehopping insulation course can be photoresist.
According to above-mentioned conception, wherein the thickness of bed hedgehopping insulation course is about 1~3 μ m.
According to above-mentioned conception, wherein first and second colored filters comprise the color region of three kinds of non-overlapping copies.
According to above-mentioned conception, wherein three kinds of colors are respectively red, green, blue.
According to above-mentioned conception, wherein first and second colored filters are mutually the same in the color of opposite position.
According to above-mentioned conception, wherein first electrode is to form in the sputter mode.
According to above-mentioned conception, wherein first electrode is higher than the height of part first colored filter at the height of bed hedgehopping insulation course.
According to above-mentioned conception, wherein first electrode forms with a plurality of thin film transistor (TFT)s and is electrically connected.
According to above-mentioned conception, wherein to cover the material on the bed hedgehopping insulation course be to select from following to first electrode: aluminium (Al), silver (Ag) and aluminium neodymium (AlNd) alloy.
According to above-mentioned conception, wherein to cover the material on part first colored filter be to select from following to first electrode: indium tin oxide (ITO) and indium-zinc oxide (IZO).
According to above-mentioned conception, wherein the thickness of first and second colored filters can be done an optimization adjustment to penetrating region and echo area.
According to above-mentioned conception, wherein this optimization is adjusted into the adjustment of color saturation.
According to above-described purpose, the invention provides a kind of liquid crystal indicator, comprising: one first substrate, have a plurality of thin film transistor (TFT)s, can limit echo area and penetrating region; One insulation course is positioned on first substrate; One first colored filter, the insulation course of covering penetrating region; One bed hedgehopping insulation course, the insulation course of covering echo area; One reflecting electrode covers the bed hedgehopping insulation course; One through electrode, cover part first colored filter; One liquid crystal layer is positioned on reflecting electrode and the through electrode; One second colored filter is positioned on the liquid crystal layer; Community electrode is positioned on second colored filter; And one second substrate, be positioned on the common electrode.
According to above-mentioned conception, wherein reflecting electrode is to form in the sputter mode.
According to above-mentioned conception, wherein to cover the material on the bed hedgehopping insulation course be to select from following to reflecting electrode: aluminium (Al), silver (Ag) and aluminium neodymium (AlNd) alloy.
According to above-mentioned conception, wherein through electrode is to form in the sputter mode.
According to above-mentioned conception, wherein to cover the material on part first colored filter be to select from following to through electrode: indium tin oxide (ITO) and indium-zinc oxide (IZO).
According to above-mentioned conception, wherein through electrode forms with reflecting electrode and is electrically connected.
According to above-mentioned conception, wherein through electrode forms with a plurality of thin film transistor (TFT)s and is electrically connected.
According to above-mentioned conception, wherein reflecting electrode forms with a plurality of thin film transistor (TFT)s and is electrically connected.
According to above-described purpose, the invention provides a kind of liquid crystal indicator, comprising: one first substrate can limit echo area and penetrating region; One first colored filter is positioned on first substrate; One bed hedgehopping insulation course is positioned at the echo area of first substrate; One liquid crystal layer is positioned on bed hedgehopping insulation course and part first colored filter; One second colored filter is positioned on the liquid crystal layer; And one second substrate, be positioned on second colored filter.
Description of drawings
Fig. 1 is a kind of existing semi-penetrated semi-reflected liquid crystal display cut-open view;
Fig. 2 A is another kind of existing semi-penetrated semi-reflected liquid crystal display cut-open view;
Fig. 2 B is another existing semi-penetrated semi-reflected liquid crystal display cut-open view;
Fig. 3 is the top view of the single picture element of semi-penetrated semi-reflected liquid crystal display of the present invention;
Fig. 4 is first embodiment of semi-penetrated semi-reflected liquid crystal display of the present invention, and a kind of sub picture element is across the cut-open view of penetrating region and echo area;
Fig. 5 is second embodiment of semi-penetrated semi-reflected liquid crystal display of the present invention, and another kind of sub picture element is across the cut-open view of penetrating region and echo area.
Embodiment
Some embodiments of the present invention can be described in detail as follows.Yet except describing in detail, the present invention can also be widely implements at other embodiment, and scope of the present invention do not limited, its with after claim be as the criterion.
First embodiment of the present invention sees the top view of the single picture element of Fig. 3 and the cut-open view of Fig. 4 sub picture element (sub-pixel) for details.To comprise three sub picture elements 31,32,33 in its single picture element 30 of colour liquid crystal display device, the color of each sub picture element is respectively Red Green Blue.Even sub picture element 31 is red sub picture element, and then sub picture element 32 will be the sub picture element of green, and sub picture element 33 will be the sub picture element of blueness.In the LCD of semi-penetration, semi-reflective, each sub picture element all can be divided into penetrating region 312,322,332 and echo area 311,321,331 two parts.
What Fig. 4 illustrated is that sub picture element 31 is at the cut-open view across penetrating region 312 and echo area 311.At first form thin film transistor (TFT) 401 at a transparency carrier inboard 41, form a transparent insulating layer 402 afterwards again, this transparent insulating layer 402 can be silicon dioxide (SiO 2) layer, silicon nitride (Si 3N 4) layer or the stack layer of above-mentioned two kinds of materials.The colored filter 42 that then forms a thickness and be t1 comprises on the sub picture element of penetrating region and echo area at each, the formation method as the formation method of colored filter, and the color of this colored filter will be looked the sub picture element color at place and be decided.For example sub picture element 31 is red, and then sub picture element 31 formed colored filters 42 are redness.In like manner, sub picture element 32 is green, and then sub picture element 32 formed colored filters 42 are green.Sub picture element 33 is blue, and then sub picture element 33 formed colored filters 42 are blueness.After colored filter 42 forms, promptly begin to limit penetrating region and echo area.Position in the echo area forms a bed hedgehopping insulation course 43 with projection (bump) shape, and the material of this insulation course 43 can be photosensitive resin or other lighttight insulating material, and its thickness is about 1~3 μ m.If the material of insulation course 43 is photosensitive resin, then this material can be utilized coating method be coated on each transparency carrier earlier, the mode of utilize exposure again, developing is come out this echo area patterning (pattern).After penetrating region and echo area patterning are finished, promptly need form penetrating region electrode 44 and echo area electrode 45.Penetrating region electrode 44 at penetrating region 312 is to utilize the method for sputter (sputter) that indium tin oxide (ITO) or indium-zinc oxide (IZO) are plated.And in the echo area 311 echo area electrodes 45 also to be the method for utilizing sputter (sputter) plate aluminium (Al) or silver (Ag) or aluminium neodymium (AlNd) alloy, and echo area electrode 45 also has the purposes of extraneous ray of reflecting.Penetrating region electrode 44 is electrically connected with echo area electrode 45, and this two electrode also will be electrically connected with thin film transistor (TFT) 401 formation.
And another transparency carrier inboard 46 also forms a thickness is that the colored filter 47 of t2 comprises on the sub picture element of penetrating region and echo area at each, the formation method as the formation method of colored filter, and the color of this colored filter 47 will be looked the sub picture element color at place and be decided.Then form community electrode 48 on colored filter 47.Promptly finish injecting liquid crystal formation liquid crystal layer 49 after the side engagement in this two transparency carrier.
Because of 311 its light are through twice colored filter 47 in the echo area, but then pass through colored filter 42 and colored filter 47 at penetrating region 312 light.So need to adjust the thickness t 1 of colored filter 42 and the thickness t 2 of colored filter 47, make at last its color saturation of demonstration of the demonstration of penetrating region and echo area near or identical.
Second embodiment of the present invention asks for an interview the top view of the single picture element of Fig. 3 and the cut-open view of Fig. 5 sub picture element (sub-pixel).What Fig. 5 illustrated is that sub picture element 31 is at the cut-open view across penetrating region 312 and echo area 311.At first form thin film transistor (TFT) 501 at a transparency carrier inboard 51, form a transparent insulating layer 502 afterwards again, this transparent insulating layer 502 can be silicon dioxide (SiO 2) layer, silicon nitride (Si 3N 4) layer or the stack layer of above-mentioned two kinds of materials.The colored filter 52 that then forms a thickness and be t3 on the sub picture element of each penetrating region, the formation method as the formation method of colored filter, and the color of this colored filter will be looked the sub picture element color at place and be decided.For example sub picture element 31 is red, and then sub picture element 31 formed colored filters 52 are redness.In like manner, sub picture element 32 is green, and then sub picture element 32 formed colored filters 52 are green.Sub picture element 33 is blue, and then sub picture element 33 formed colored filters 52 are blueness.After colored filter 52 forms, promptly begin to limit penetrating region and echo area.Position in the echo area forms a bed hedgehopping insulation course 53 with projection (bump) shape, and the material of this insulation course 53 can be photosensitive resin or other lighttight insulating material, and its thickness is about 1~3 μ m.If the material of insulation course 43 is photosensitive resin, then this material can be utilized coating method be coated on each transparency carrier earlier, the mode of utilize exposure again, developing is come out this echo area patterning (pattern).After penetrating region and echo area patterning are finished, promptly need form penetrating region electrode 54 and echo area electrode 55.Penetrating region electrode 54 at penetrating region 312 is to utilize the method for sputter (sputter) that indium tin oxide (ITO) or indium-zinc oxide (IZO) are plated.And in the echo area 311 echo area electrodes 55 also to be the method for utilizing sputter (sputter) plate aluminium (Al) or silver (Ag) or aluminium neodymium (AlNd) alloy, and echo area electrode 55 also has the purposes of extraneous ray of reflecting.Penetrating region electrode 54 is electrically connected with echo area electrode 55, and this two electrode also will be electrically connected with thin film transistor (TFT) 501 formation.
And another transparency carrier inboard 56 also forms a thickness is that the colored filter 57 of t4 comprises on the sub picture element of penetrating region and echo area at each, the formation method as the formation method of colored filter, and the color of this colored filter 57 will be looked the sub picture element color at place and be decided.Then form community electrode 58 on colored filter 57.Promptly finish injecting liquid crystal formation liquid crystal layer 59 after the side engagement in this two transparency carrier.
Because of 311 its light are through twice colored filter 57 in the echo area, but then pass through colored filter 52 and colored filter 57 at penetrating region 312 light.So need to adjust the thickness t 3 of colored filter 52 and the thickness t 4 of colored filter 57, make at last its color saturation of demonstration of the demonstration of penetrating region and echo area near or identical.
Even the present invention describes by enumerating several preferred embodiments, but the present invention is not limited to the embodiment that enumerated.Though the specific embodiment of before enumerating and narrating, apparently, other does not break away under the disclosed spirit, and the equivalence of being finished changes or modifies, and all should be included in the claim of the present invention.In addition, all other do not break away under the disclosed spirit, and other that finished are similar and approximate to be changed or modification, also includes in claim of the present invention.Should explain scope of the present invention with the widest qualification simultaneously, to comprise all modifications and similar structures.

Claims (17)

1. liquid crystal indicator comprises:
One first substrate has a plurality of thin film transistor (TFT)s, can limit echo area and penetrating region;
One insulation course is positioned on this first substrate;
One first colored filter is positioned at this insulation course top;
One bed hedgehopping insulation course is positioned at the echo area of this first substrate;
One reflecting electrode covers this bed hedgehopping insulation course;
One through electrode, this first colored filter of cover part;
One liquid crystal layer, the position is on this reflecting electrode and this through electrode;
One second colored filter is positioned on this liquid crystal layer;
Community electrode is positioned on this second colored filter; And
One second substrate is positioned on this common electrode.
2. liquid crystal indicator as claimed in claim 1, wherein this first and second substrate is a transparency carrier.
3. liquid crystal indicator as claimed in claim 1, wherein the material of this insulation course is to select from following: silicon dioxide (SiO 2) and silicon nitride (Si 3N 4).
4. liquid crystal indicator as claimed in claim 1, wherein the material of this bed hedgehopping insulation course can be photoresist.
5. liquid crystal indicator as claimed in claim 4, wherein the thickness of this bed hedgehopping insulation course is about 1~3 μ m.
6. liquid crystal indicator as claimed in claim 1, wherein this first and second colored filter comprises the color region of three kinds of non-overlapping copies.
7. liquid crystal indicator as claimed in claim 6, wherein these three kinds of colors are respectively red, green, blue.
8. liquid crystal indicator as claimed in claim 1, wherein this first and second colored filter is mutually the same in the color of opposite position.
9. liquid crystal indicator as claimed in claim 1, wherein this reflecting electrode is to form in the sputter mode.
10. liquid crystal indicator as claimed in claim 9, wherein to cover the material on this bed hedgehopping insulation course be to select from following to this reflecting electrode: aluminium (Al), silver (Ag) and aluminium neodymium (AlNd) alloy.
11. liquid crystal indicator as claimed in claim 1, wherein this through electrode is to form in the sputter mode.
12. liquid crystal indicator as claimed in claim 11, wherein to cover the material of part on this first colored filter be to select from following to this through electrode: indium tin oxide (ITO) and indium-zinc oxide (IZO).
13. liquid crystal indicator as claimed in claim 1, wherein this through electrode forms with this reflecting electrode and is electrically connected.
14. liquid crystal indicator as claimed in claim 1, wherein this through electrode forms with these a plurality of thin film transistor (TFT)s and is electrically connected.
15. liquid crystal indicator as claimed in claim 1, wherein this reflecting electrode forms with these a plurality of thin film transistor (TFT)s and is electrically connected.
16. liquid crystal indicator as claimed in claim 1, wherein the thickness of this first and second colored filter can be done an optimization adjustment to this penetrating region and this echo area.
17. liquid crystal indicator as claimed in claim 16, wherein this optimization is adjusted into the adjustment of color saturation.
CNB021584176A 2002-12-24 2002-12-24 Liquid crystal displaying devices Expired - Fee Related CN100458511C (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100410746C (en) * 2006-04-06 2008-08-13 友达光电股份有限公司 LC driving electrode structure
CN101126876B (en) * 2006-08-18 2010-05-12 北京京东方光电科技有限公司 Thin-film transistor LCD pixel structure and its making method
CN102650782A (en) * 2011-12-14 2012-08-29 京东方科技集团股份有限公司 Half-reflecting half-transmission LCD (Liquid Crystal Display) panel

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4196505B2 (en) * 1999-12-13 2008-12-17 ソニー株式会社 Display device, manufacturing method thereof, and color filter
KR100715943B1 (en) * 2001-01-29 2007-05-08 삼성전자주식회사 Liquid crystal display device and method for manufacturing the same
TW581918B (en) * 2001-03-07 2004-04-01 Sharp Kk Transmission/reflection type color liquid crystal display device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100410746C (en) * 2006-04-06 2008-08-13 友达光电股份有限公司 LC driving electrode structure
CN101126876B (en) * 2006-08-18 2010-05-12 北京京东方光电科技有限公司 Thin-film transistor LCD pixel structure and its making method
CN102650782A (en) * 2011-12-14 2012-08-29 京东方科技集团股份有限公司 Half-reflecting half-transmission LCD (Liquid Crystal Display) panel
WO2013086905A1 (en) * 2011-12-14 2013-06-20 京东方科技集团股份有限公司 Semi-reflective semi-transparent liquid crystal panel

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