CN1503004A - Small area pixel electrode direct plane plate x-ray detector - Google Patents
Small area pixel electrode direct plane plate x-ray detector Download PDFInfo
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- CN1503004A CN1503004A CNA021520615A CN02152061A CN1503004A CN 1503004 A CN1503004 A CN 1503004A CN A021520615 A CNA021520615 A CN A021520615A CN 02152061 A CN02152061 A CN 02152061A CN 1503004 A CN1503004 A CN 1503004A
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- 230000005684 electric field Effects 0.000 claims abstract description 19
- 238000003466 welding Methods 0.000 claims description 6
- 239000002356 single layer Substances 0.000 abstract 1
- 239000003574 free electron Substances 0.000 description 26
- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 238000001803 electron scattering Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Measurement Of Radiation (AREA)
Abstract
This invention discloses an x-ray detector of a small area picture element electrode direct flat plate composed of picture element units, each unit includes a high voltage electrode, x-ray sensing medium and picture element electrode, when the ratio of its electrode area to the picture element area is smaller than 10%, the nearby region of the electrode forms an enough strong high voltage electric field which is a low dose, x-ray flat plate direct detector of suppressing electronic scatter and flucluation noise and can carry out small area chip single layer seamless splicing.
Description
Technical field
The present invention relates to X-line sniffer, especially relate to small size element electrode direct flat plate X-line detector.
Background technology
Existing X-line sniffer is a lot, and direct flat plate X-line detector is wherein a kind of.Known direct flat plate X-line detector is to be arranged and form at a planar row, column direction by minimonitor (image-generating unit) one by one.Each image-generating unit is made up of negative high-voltage electrode plate, X-line sensitive media and pixel electrode.When detector exposed under the X-line, the medium in the image-generating unit was subjected to the X-line to excite the generation free electron; Free electron direction towards pixel electrode under the effect of high-voltage electric field is drifted about.After pixel electrode is collected these free electrons, generation amplitude and the directly proportional electric signal of incident X-line strength; Each pixel electrode signal amplitude is shown successively, promptly form piece image.
Comparing of the pixel electrode area of existing direct flat plate X-line detector and elemental area is more approaching, and thus, there is the defective of following four aspects in existing direct flat plate X-line detector:
1, there is bigger fluctuation noise.
Because pixel electrode area and elemental area is bigger in the existing direct flat plate X-line detector, as shown in Figure 1: elemental area is 139 μ m * 139 μ m in this direct flat plate X-line detector, and the pixel electrode area is 130 μ m * 130 μ m, and the pixel electrode area accounts for more than 95% of elemental area.
In this detector medium, Electric Field Distribution almost is uniformly, as shown in Figure 2.By accompanying drawing 4 as can be known, because X-line and medium are done the position of time spent generation free electron is at random.Therefore, the stroke of free electron from generation to pixel electrode has nothing in common with each other, and the probability that secondary collision takes place also has nothing in common with each other.Voltage one timing in sensitive media, the stroke that free electron drifts about in sensitive media is short more, and the number of times that " non-resilient secondary collision " takes place free electron is just few more with the regeneration electron number that therefore produces; The induced signal that is produced on pixel electrode is also just weak more.Otherwise the electron number that produces because of non-resilient secondary collision will be many more, and induced signal is also just strong more.Therefore, under uniform electric field, want the electron gain proliferation function, just must increase the voltage in the sensitive media, but incident be owing to produce the position of the free electron fluctuation noise greatly that causes inequality.
2, throwing is bigger according to dosage
Because must relying on raising X-line to throw according to dosage, the existence of " big fluctuation noise ", existing direct flat plate X-line detector reduce noise with the method that free electron in the balanced medium produces the position.Therefore, may cause unnecessary harm to the person under inspection.
3, the lateral drift effect of unrestraint free electron.
As shown in Figure 5, X-line and sensitive media are made the component motion that free electron that the time spent produces all can form a lateral drift.Because the electric field in the existing detector X-line sensitive media is equally distributed up and down, therefore, free electron is in the drift process of medium, and its transverse movement is restricted hardly.Cause free electron to be easy to arrive other pixel electrode, cause the pseudo-shadow (BLUR) of more serious electron scattering thus.
4, can not realize that the individual layer of little chip is seamless spliced.
Because the pixel electrode area area of a pixel no better than, during with little chip manufacturing detector, its pressure welding point and scribe line can only be distributed in chip around, as shown in Figure 3.Want to realize the seamless spliced of little chip, can only adopt multilayer imbricate joining method, and can't accomplish that individual layer is seamless spliced.
Summary of the invention
The objective of the invention is at above-mentioned defective, a kind of low dosage is provided, can suppresses electron scattering phenomenon and fluctuation noise and can carries out the seamless spliced small size element electrode direct flat plate X-line detector of small size chip individual layer.
For achieving the above object, technical scheme of the present invention is as follows: minimonitor is arranged in detector array in the row, column direction on a plane.Each detector is made up of negative high-voltage electrode plate, X-line sensitive media and pixel electrode.Table 1 is the test result of one group of different area pixel electrode detector.When the ratio of pixel electrode and the area of pixel less than 10% the time, the high-voltage electric field zone that the pixel electrode near zone forms makes output signal begin to have more significantly and improves; And along with further the dwindling of the ratio of pixel electrode and the area of pixel, the output signal effect also further is significantly improved.
Table one
| Elemental area (μ m * μ m) | ????????????????????????????????????????160×160 | ||||||||
| Pixel electrode area (μ m * μ m) | ?160×160 | ?160×80 | ?160×40 | ?160×20 | ?160×16 | ?160×8 | ?160×4 | ?160×2 | ?160×0.8 |
| Number percent (%) | ??100 | ??50 | ??25 | ??12.5 | ??10％ | ??5％ | ??2.5％ | ??1.25％ | ??0.005 |
| Sensitivity (uR) | ??30 | ??22 | ??18 | ??13 | ??7 | ??3.6 | ??2.2 | ??1.0 | ??1.0 |
| Signal to noise ratio (S/N ratio) (S/N) | ??2 | ??3 | ??4 | ??6 | ??10 | ??11 | ??12 | ??15 | ??20 |
| Pressure welding point is laid between the pixel | Not | Not | Not | Energy | Energy | Energy | Energy | Energy | Energy |
Enforcement of the present invention will produce following beneficial effect: reduce owing to the different fluctuation noises that cause in free electron off-position; Reducing the X-line throws according to dosage; The lateral drift that suppresses free electron; The individual layer of small size chip is seamless spliced.
Description of drawings
Accompanying drawing 1 is the comparison synoptic diagram of the pixel electrode of prior art and the area projection relation between the pixel.
Accompanying drawing 2 is the Electric Field Distribution synoptic diagram in the prior art X-line sensitive media.
Accompanying drawing 3 is position views of the described small size chip pressure welding point of prior art.
Accompanying drawing 4 is principle key diagrams that non-resilient secondary collision takes place the described free electron of prior art.
Accompanying drawing 5 is synoptic diagram of the lateral drift effect of the described free electron of prior art.
Accompanying drawing 6 is comparison synoptic diagram of the area projection relation between pixel electrode of the present invention and the pixel.
Accompanying drawing 7 is the Electric Field Distribution synoptic diagram in the sensitive media of the present invention.
Accompanying drawing 8 is position views of pixel cell chip pressure welding point of the present invention.
Accompanying drawing 9 is principle key diagrams that non-resilient secondary collision takes place free electron of the present invention.
Accompanying drawing 10 is synoptic diagram of the lateral drift effect of inhibition free electron of the present invention.
Accompanying drawing 11 is synoptic diagram of pixel cell chip individual layer of the present invention seamless link.
Now the present invention is further illustrated in conjunction with the accompanying drawings and embodiments.
Embodiment
Embodiment 1
Small size element electrode direct flat plate X-line detector of the present invention, the area of its pixel electrode 1 are 0.8 μ m * 56 μ m, and the area of pixel 2 is 166.7 μ m * 166.7 μ m.
Small size element electrode direct flat plate X-line detector of the present invention, the area of its pixel electrode 1 are 5 μ m * 56 μ m, and the area of pixel 2 is 166.7 μ m * 166.7 μ m.
The existing direct flat plate X-line detector of the usefulness of making comparisons, the area of its pixel electrode 1 are 130 μ m * 130 μ m, and the area of pixel 2 is 139 μ m * 139 μ m.The comparison test of two kinds of detectors the results are shown in Table two:
Table two
| Prior art | The present invention (embodiment 1) | The present invention (embodiment 2) | ||
| Elemental area (μ m * μ m) | ????139×139 | ????166.7×166.7 | ????166.7×166.7 | |
| Pixel electrode area (μ m * μ m) | ????150×150 | ????0.8×56 | ????5×56 | |
| Sensitivity (μ R) | ????30 | ????1 | ????2 | |
| ?M ?F ?T | ????1?lp/mm | ????0.91 | ????0.96 | ????0.93 |
| ????2?lp/mm | ????0.68 | ????0.80 | ????0.72 | |
| ????3?lp/mm | ????0.47 | ????0.66 | ????0.55 | |
| Little chip splicing | Multilayer has seam to connect | The individual layer seamless link | The individual layer seamless link | |
As shown in Figure 6, because the area percentage of pixel electrode of the present invention 1 and pixel 2 so can form a high intensity electric fields zone 4, as shown in Figure 7 less than 10% near pixel electrode 1.Again in conjunction with the accompanying drawings 9 as can be known, voltage one timing at X-line sensitive media 3, because the electric field in the sensitive media 3 is in pixel electrode 1 place's high concentration, therefore, no matter where free electron is created in, free electron is beyond this high intensity electric fields zone 4 time, can produce " non-resilient secondary collision " hardly and electronics self duplication effect occurs, thereby can reduce the fluctuation noises that cause owing to free electron off-position difference.
As shown in Figure 7, Electric Field Distribution form in the sensitive media 3 can be divided into two parts, electric field near cathode high voltage electrode place almost is uniform, electric field near pixel electrode 1 place then no longer evenly distributes, but phenomenon appears entad converging, that is to say and a high intensity electric fields zone 4 around pixel electrode 1, occurred, when free electron enters this high intensity electric fields zone 4, can " non-resilient secondary collision " take place with the atom of sensitive media 3 and produce new electronics, thereby realize the signal amplification of medium.
As shown in Figure 10, because electric field converges to pixel electrode 1, line of electric force in the sensitive media 3 can be broken down into component and the interior poly-component of level up and down, and poly-component can be cancelled out each other with the lateral drift component of free electron in the level, thereby suppress the lateral drift of free electron, make free electron can enter predetermined pixel electrode 1.
Shown in accompanying drawing 8, accompanying drawing 11, because pixel electrode 1 area occupied is little, so just can on pixel 2 unit chips, leaves enough spaces and make scribe line 5 and pressure welding point 6, therefore, the present invention can realize the individual layer seamless link of small size chip.
Direct flat plate X-line detector output signal is relevant with negative high voltage horizontal electrode gap, X-line exposing amount, X-line sensitive media kind and working environment state factors such as (as air pressure, temperature).When just dwindling the area of pixel electrode, the quality of output signal can be significantly improved when the various factors that influences signal output is constant substantially but in some cases.
Claims (2)
1, small size element electrode direct flat plate X-line detector, form by pixel cell one by one, each pixel cell is made up of electrode plate with high voltage, X-line sensitive media and pixel electrode, it is characterized in that: the ratio of the area of described pixel electrode (1) and pixel (2) is less than 10%, so that form an enough strong high-voltage electric field zone (4) and have enough spaces to lay scribe line (5) and pressure welding point (6) between pixel electrode (1) at pixel electrode (1) near zone.
2, small size element electrode direct flat plate X-line detector according to claim 1 is characterized in that: the ratio of described pixel electrode and the area of pixel makes at pixel electrode (1) near zone and forms especially obviously strong high-voltage electric field zone (4) less than 2%.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02152061 CN1230693C (en) | 2002-11-26 | 2002-11-26 | Small area pixel electrode direct plane plate X-ray detector |
| AU2003284793A AU2003284793A1 (en) | 2002-11-26 | 2003-11-06 | Small area pixel electrode direct planar x-ray detector |
| PCT/CN2003/000937 WO2004049456A1 (en) | 2002-11-26 | 2003-11-06 | Small area pixel electrode direct planar x-ray detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02152061 CN1230693C (en) | 2002-11-26 | 2002-11-26 | Small area pixel electrode direct plane plate X-ray detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1503004A true CN1503004A (en) | 2004-06-09 |
| CN1230693C CN1230693C (en) | 2005-12-07 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02152061 Expired - Fee Related CN1230693C (en) | 2002-11-26 | 2002-11-26 | Small area pixel electrode direct plane plate X-ray detector |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN1230693C (en) |
| AU (1) | AU2003284793A1 (en) |
| WO (1) | WO2004049456A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103917897A (en) * | 2011-11-09 | 2014-07-09 | 皇家飞利浦有限公司 | Radiation-sensitive detector device with charge-rejecting segment gaps |
| CN103917896A (en) * | 2011-11-08 | 2014-07-09 | 皇家飞利浦有限公司 | Seamless tiling to build large detector |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014110353A (en) * | 2012-12-03 | 2014-06-12 | Canon Inc | Detection device and radiation detection system |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4618380A (en) * | 1985-06-18 | 1986-10-21 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method of fabricating an imaging X-ray spectrometer |
| JP3649907B2 (en) * | 1998-01-20 | 2005-05-18 | シャープ株式会社 | Two-dimensional image detector and manufacturing method thereof |
| JP3587991B2 (en) * | 1998-08-03 | 2004-11-10 | シャープ株式会社 | Two-dimensional image detector and manufacturing method thereof |
| JP4127444B2 (en) * | 1999-03-30 | 2008-07-30 | 富士フイルム株式会社 | Radiation solid state detector |
| DE10034575A1 (en) * | 2000-07-14 | 2002-01-24 | Philips Corp Intellectual Pty | X-ray detector with improved light output |
-
2002
- 2002-11-26 CN CN 02152061 patent/CN1230693C/en not_active Expired - Fee Related
-
2003
- 2003-11-06 WO PCT/CN2003/000937 patent/WO2004049456A1/en not_active Application Discontinuation
- 2003-11-06 AU AU2003284793A patent/AU2003284793A1/en not_active Abandoned
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103917896A (en) * | 2011-11-08 | 2014-07-09 | 皇家飞利浦有限公司 | Seamless tiling to build large detector |
| CN103917896B (en) * | 2011-11-08 | 2017-08-15 | 皇家飞利浦有限公司 | Arranged for building the seamless of big detector |
| CN103917897A (en) * | 2011-11-09 | 2014-07-09 | 皇家飞利浦有限公司 | Radiation-sensitive detector device with charge-rejecting segment gaps |
| CN103917897B (en) * | 2011-11-09 | 2016-08-17 | 皇家飞利浦有限公司 | There is the radiation-sensitive detector equipment of the intersegmental gap of electrical charge rejection |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2003284793A1 (en) | 2004-06-18 |
| CN1230693C (en) | 2005-12-07 |
| WO2004049456A1 (en) | 2004-06-10 |
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Granted publication date: 20051207 Termination date: 20091228 |