CN1500645A - Heat sensitive head and production method - Google Patents
Heat sensitive head and production method Download PDFInfo
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- CN1500645A CN1500645A CNA200310114109A CN200310114109A CN1500645A CN 1500645 A CN1500645 A CN 1500645A CN A200310114109 A CNA200310114109 A CN A200310114109A CN 200310114109 A CN200310114109 A CN 200310114109A CN 1500645 A CN1500645 A CN 1500645A
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Abstract
The thermal head comprises a plurality of heating resistors 4a deposited continuously on an alumina substrate 2 having a glaze heat insulation layer 2, and a conductor 5 leading to the opposite end parts in the longitudinal direction of the plurality of heating resistors 4a. An open part 7 for exposing the surface of the plurality of heating resistors 4a is made in the conductor 5 and an insulating inorganic oxide layer 10 of SiO<SB>2</SB>, for example, is provided in the open part 7.
Description
Technical field
The invention relates to thermal head (thermal head) and the manufacture method thereof of lift-launch on photosensitive formula printer (photo printer) or thermo printer (thermal printer) etc.
Background technology
Be equipped on the thermal head on photosensitive formula printer or the thermo printer etc., be provided with a plurality of heating resistors, to the electrode (conductor) of these heating resistors power supply and protective layer etc.Generally formed by following operation.At first, continuous film forming forms resistive film and conductor on substrate, makes the resistance value stabilisation of resistive film by annealing in process.Then, use photoetching process (photolitho-graphy) technology, after the decision resistance shape, the conductor on the heating resistor of removal resistive film will expose heating resistor will not wanting the removal of conductor partly and resistive film.Like this, on heating resistor that exposes and conductor, form protective layer.By above operation, obtain general thermal head (the heating portion of thermal head) in the past.
But, in above-mentioned manufacturing process, because in the operation of the conductor on removing heating resistor, be to remove resist layer (resist) with the state that heating resistor exposes, so heating resistor is known from experience the generation oxidation when removing resist layer, have the problem of the resistance value generation deviation between a plurality of heating resistors.In order to eliminate these deviations, though there is the method for using reverse sputtering (contrary sputter) or ion beam milling (ion beam etching) etc. that the surface oxide layer of heating resistor is removed, but be difficult to utilize reverse sputtering or ion beam milling etc. that the surface oxide layer uniformity is removed (keeping the initial stage thickness of heating resistor film), be difficult to make the resistance value homogenising between a plurality of heating resistors.And, when forming protective layer, in order to improve combining closely of this protective layer and conductor and resistive film, also carry out reverse sputtering, but the etch bias of this reverse sputtering also can cause the deviation of resistance value between heating resistor and the heating resistor.Head with such heating resistor is when being equipped on printer, and the deviation of resistance value can cause the decline (the inhomogeneous of gradation of drop-out colour occurring) of print quality between heating resistor and the heating resistor.Therefore, particularly for the thermal head of color printer or photosensitive formula printer, must be correct in the deviation of resistance value between a plurality of heating resistors carry out strict control.
So in technology in the past, after capitiform becomes, carry out heating resistor applied suitable potential pulse, adjust the finishing of resistance value and handle (trimming processing), make the resistance value homogenising of heating resistor thus.But this finishing is handled and must be carried out each stature, and is very loaded down with trivial details.And, owing to be that the resistance value of heating resistor is descended in finishing is handled, so can make the life-span of heating resistor, so the lost of life of head.By above reason as can be known, ideal is not handle the deviation of the resistance value that suppresses heating resistor by finishing.
And then, in recent years, even wishing to develop applies electric power and increases, the thermal head that the variation of resistance value is also little, with head can with the corresponding high speed motion of carrying out such as the high capacity of data and high speed processing.
Patent documentation:
The spy opens clear 62-4301 communique
The spy opens clear 62-109668 communique
The spy opens clear 62-179956 communique
The spy opens clear 63-185644 communique
Summary of the invention
In view of the above problems, the object of the present invention is to provide a kind of can the finishing to handle and suppress the thermal head and the manufacture method thereof of the deviation of the resistance value between the heating resistor.And, the present invention also aims to obtain little thermal head of resistance change and manufacture method thereof.
The present invention is by the surface coverage insulation inorganic oxide layer at heating resistor; can be when preventing the surface oxidation of heating resistor; can also protect heating resistor to avoid the etching damage in the manufacture process and the deviation of the resistance value of the resistance body that suppresses to generate electricity; and, can suppress to reduce the variation of the resistance value of heating resistor owing to the annealing effect that applies electric power (constituting the crystallization of heating resistor element of volume).
That is to say, the present invention have on substrate continuous film forming, a plurality of heating resistors and respectively in the thermal head of the conductor of the resistance length direction both ends conducting of a plurality of heating resistors, it is characterized in that: on described conductor, form the opening portion of exposing a plurality of heating resistors surface, and in this opening portion, be provided with by the insulation inorganic oxide layer that inorganic oxide constituted with insulating properties.
Preferred insulation inorganic oxide layer is by SiO
2, SiON, AlSiO, Al
2O
3In any one form.As long as these insulation inorganic oxide materials when just can prevent heating resistor surface oxidation and etching damage, can also apply the variation that suppresses the resistance value of heating resistor when electric power increases.
On insulation inorganic oxide layer and conductor, the protective layer of friction in the time of can being formed for protecting insulation inorganic oxide layer and conductor not to be subjected to the head action.In this case, can combine closely well in order to make protective layer and insulation inorganic oxide layer and conductor, generally be to implement reverse sputtering to handle before layer film forming.Can give full play to the function that prevents the heating resistor surface oxidation in order to make the insulation inorganic oxide layer; the protection heating resistor is not subjected to the function of etching damage; and the function that suppresses the resistance change of heating resistor, preferably the thickness after reverse sputtering is handled is more than 200 , below 2000 .
When the length direction along described resistance heater cuts off described insulation inorganic oxide layer, its cross sectional shape for and the both ends that join of described conductor are sharp-pointed shape, the middle body that is clipped between the both ends is smooth summary concave shape.Such summary concave shape is under the state of the residual resist layer that is used to form the opening portion of exposing heating resistor and film forming forms the insulation inorganic oxide layer, and removing does not then need part (imbedding the part outside the opening portion) and form.
In the scheme of manufacture method of the present invention, it is characterized in that comprising following operation: the operation that on substrate, forms resistive film and conductor continuously; The conductor that on described conductor, forms the resistance width of decision heating resistor and conductor fig with resist layer after, this conductor is removed with resist layer unlapped conductor of institute and resistive film, and is removed the operation of this conductor with resist layer; The opening portion of resistance length that on described conductor, forms decision heater resistance with resist layer after, this opening portion is removed with the unlapped conductor of resist layer institute, form the operation of the opening portion of exposing a plurality of heating resistors; With under the state of resist layer, comprising the operation that forms on the substrate surface of described opening portion with resist layer and a plurality of heating resistors of exposing by the insulation inorganic oxide layer that inorganic oxide constituted in residual described opening portion with insulating properties; And remove described opening portion with resist layer and this opening portion operation with the insulation inorganic oxide layer on the resist layer.
According to this manufacture method; because the insulation inorganic oxide layer is embedded in the opening portion, covers the surface of a plurality of heating resistors, so by this insulation inorganic oxide layer; can prevent the surface oxidation of a plurality of heating resistors, can protect a plurality of heating resistors not to be subjected to the infringement of etching or sputter simultaneously.Can fully suppress deviation thus by resistance value between caused a plurality of heating resistors such as surface oxidation or etching damage and the heating resistor.And, according to this manufacture method,,, therefore can not generate the deviation of resistance value of the heating resistor of and generation bad by connecting airtight between this resistive film and the conductor so between resistive element and conductor, do not have oxide layer because resistive film and conductor are continuous film formings.Can not need finishing in the past to handle thus, so manufacturing process is simplified.And, do not have the defective of a lost of life.And, according to this manufacture method, owing to be after the opening portion of exposing a plurality of heating resistors forms, to form the insulation inorganic oxide layer again, so the self-adjusting of can insulate inorganic oxide layer and a plurality of heating resistor (the resistance length of heating resistor).And then conductor is covered on each heating resistor by the insulation inorganic oxide layer, be all covered heat loss under the situation so can eliminate conductor.
After removing the operation of described opening portion with resist layer and described insulation inorganic oxide layer, preferably have the surface of pruning described conductor and described insulation inorganic oxide layer, on this conductor pruned and insulation inorganic oxide layer, form the operation of protective layer.This protective layer is the wear-resistant protective layer that is used to protect conductor and insulation inorganic oxide layer not to be rubbed when head moves.When forming this protective layer; earlier form described insulation inorganic oxide layer with the thickness film forming more than 400 , below 2200 ; again before described diaphragm forms; use method such as reverse sputtering with the thickness of described insulation inorganic oxide layer about 100 that prune, make final thickness be 200 above, below 2000 .
The opening portion resist layer, preferably should by (lift-off) method of peeling off can remove the opening portion with resist layer and this opening portion with the insulation inorganic oxide layer on the resist layer, form by peeling off (lift-off) resist layer.But, be under the situation about forming at conductor by aluminium, the common resist layer that can use the angle, base not cut.This is because aluminium conductor generates side etching (side etching) easily, and the side etching that produces when being removed by conductor can embed the angle on base, uses common resist layer also can access and peel off opening portion shape equal under the situation of resist layer.
In order to reach low resistanceization and cost degradation, preferred conductor is formed by aluminium conductor.Preferred this aluminium conductor is removed by Wet-type etching or reactive ion etching.And preferred resistive film can be formed by Ta-Si-O, the TaSiONb of easy high resistanceization, the cermet material of refractory metals such as Ti-Si-O, Cr-Si-O, is removed by reactive ion etching.
Yet, according to above-mentioned manufacture method, remove conductor and resistive film do not need part after, form the opening portion resist layer of the resistance length of decision heating resistor.That is to say to have formation opening portion resist layer on the concavo-convex face.Like this, just there is the opening portion inhomogeneous, the defective that the precision of the resistance length of heating resistor worsens with resist layer.Therefore in order to determine the resistance length of heating resistor accurately, the manufacture method below preferred the employing.
That is to say, in other the manufacture method of form of the present invention, it is characterized in that having following operation: the operation that on substrate, forms resistive film and conductor continuously; On described conductor, form the opening portion resist layer of the resistance length of decision heating resistor, this opening portion is removed with the unlapped conductor of resist layer institute, form the operation of the opening portion of exposing a plurality of heating resistors; , comprising on the substrate surface of described opening portion with resist layer and the described a plurality of heating resistors that expose with under the state of resist layer in residual described opening portion, forming operation by the insulation inorganic oxide layer that inorganic oxide constituted with insulating properties; After the described opening portion of removal uses resist layer and described opening portion with the insulation inorganic oxide layer on the resist layer, the conductor of the resistance width of formation decision heating resistor and the conductor fig operation of resist layer on substrate surface; The operation of the conductor that removal is exposed with resist layer from described conductor; The operation of the insulation inorganic oxide layer that removal is exposed with resist layer from described conductor; The operation of the resistive film that removal is exposed with resist layer from described conductor; And the operation of removing described conductor usefulness resist layer.
According to this manufacture method, can on smooth conductor, form the opening portion resist layer of decision heating resistor bulk resistor length.Thus, the opening portion of exposing a plurality of heating resistors can be correctly formed, the resistance length of heating resistor can be stipulated accurately.
Removing described conductor with after the operation of resist layer, preferably have the surface of pruning described conductor and described insulation inorganic oxide layer, on this conductor pruned and insulation inorganic oxide layer, form the operation of protective layer.Preferably when forming this protective layer; earlier form described insulation inorganic oxide layer with the thickness film forming more than 400 , below 2200 ; again before described diaphragm forms; use method such as reverse sputtering with the thickness of described insulation inorganic oxide layer about 100 that prune, make final thickness be 200 above, below 2000 .
The opening portion resist layer, preferably should by the method for peeling off can remove the opening portion with resist layer and this opening portion with the insulation inorganic oxide layer on the resist layer, form by peeling off resist layer.But, be under the situation about forming at conductor by aluminium, the common resist layer that can use the angle, base not cut.This is because aluminium conductor generates side etching easily, and the side etching that produces when being removed by conductor can be cut the angle on base, uses common resist layer also can access and peel off opening portion shape equal under the situation of resist layer.
Description of drawings
Fig. 1 is the cutaway view of the thermal head of expression one embodiment of the present of invention.
Fig. 2 is the vertical view of the thermal head (forming protective layer state before) in the presentation graphs 1.
Fig. 3 is for the thermal head that has or do not have the insulation inorganic oxide layer, and the expression resistance value is with the curve map of the measurement result that applies electric power variation (anti-pulse characteristic).
Fig. 4 is expression when the thickness of the protective layer that changes the thermal head with the inorganic oxide layer that insulate, and resistance value is with the curve map of the measurement result that applies electric power variation (anti-pulse characteristic).
Fig. 5 is an operation of the manufacture method of expression thermal head shown in Figure 1, (a) is cutaway view, (b) is vertical view.
Fig. 6 is next step operation of carrying out of expression operation shown in Figure 5, (a) is cutaway view, (b) is vertical view.
Fig. 7 is next step operation of carrying out of expression operation shown in Figure 6, (a) is cutaway view, (b) is vertical view.
Fig. 8 is next step operation of carrying out of expression operation shown in Figure 7, (a) is cutaway view, (b) is vertical view.
Fig. 9 is next step operation of carrying out of expression operation shown in Figure 8, (a) is cutaway view, (b) is vertical view.
Figure 10 is an operation of the manufacture method of thermal head in the expression second embodiment of the invention, (a) is cutaway view, (b) is vertical view.
Figure 11 is next step operation of carrying out of expression operation shown in Figure 10, (a) is cutaway view, (b) is vertical view.
Figure 12 is next step operation of carrying out of expression operation shown in Figure 11, (a) is cutaway view, (b) is vertical view.
Figure 13 is next step operation of carrying out of expression operation shown in Figure 12, (a) is cutaway view, (b) is vertical view.
Figure 14 is next step operation of carrying out of expression operation shown in Figure 13, (a) is cutaway view, (b) is vertical view.
Figure 15 is next step operation of carrying out of expression operation shown in Figure 14, (a) is cutaway view, (b) is vertical view.
Figure 16 is next step operation of carrying out of expression operation shown in Figure 15, (a) is cutaway view, (b) is vertical view.
Figure 17 is next step operation of carrying out of expression operation shown in Figure 16, (a) is cutaway view, (b) is vertical view.
Figure 18 is next step operation of carrying out of expression operation shown in Figure 17, (a) is cutaway view, (b) is vertical view.
Figure 19 is next step operation of carrying out of expression operation shown in Figure 180, is cutaway view (cutaway view of the thermal head of second embodiment of the invention) (a), (b) is vertical view.
Figure 20 is a cutaway view of representing not have the thermal head in the past of insulation inorganic oxide layer.
Among the figure: the 1-thermal head; 2-glaze (glaze) heat-insulation layer, 3-aluminum oxide substrate, 4-resistive film; the 4a-heating resistor; the 5-conductor, 5a-common electrode (common electrode), 5b-electrode special; 6-interval region (hole portion); inorganic oxide layer insulate for 7-opening portion (hole portion), 8-protective layer, 10-.
The specific embodiment
Fig. 1 is the cutaway view of the thermal head 1 of expression one embodiment of the present of invention, and Fig. 2 is the vertical view of expression thermal head 1 (removing protective layer 8).Thermal head 1 is provided with the conductor (electrode) 5 that a plurality of heating resistor 4as and be used to of continuous film forming on the aluminum oxide substrate 3 with glaze heat-insulation layer (glass) 2 make a plurality of heating resistor 4a energisings.
A plurality of heating resistor 4a are formed on glaze heat-insulation layer 2 by cermet material, as shown in Figure 2, are provided with the interval region (gap zone) 6 of the resistance width W of restriction heating resistor 4a between a plurality of heating resistor 4a of adjacency.Interval region 6 is along the direction that parallels with the length direction (left and right directions among Fig. 1 and Fig. 2) of heating resistor 4a and elongated extension and the hole portion that forms.In Fig. 2, expose glaze heat-insulation layer 2 from this interval region 6.
On conductor 5, form expose a plurality of heating resistor 4a, the cross section is down trapezoidal opening portion 7.By this opening portion 7, conductor 5 be divided into a common electrode 5a of whole heating resistor 4a conductings and with a plurality of electrode special 5b of the independent conducting of each heating resistor 4a, and be conducted with the two ends of the resistance length direction of heating resistor 4a respectively.The electrode width of each electrode special 5b is limited by interval region 6, and the resistance length L of heating resistor 4a is limited by opening portion 7.Conductor 5 for example preferably is made of aluminium conductor.
In the opening portion 7 of above-mentioned conductor 5, imbed insulation inorganic oxide layer 10.Insulation inorganic oxide layer 10 covers the surface of a plurality of heating resistor 4a, in the surface oxidation that prevents heating resistor 4a, still protects heating resistor 4a to avoid being caused by etching in the manufacture process protective layer of infringement.Insulation inorganic oxide layer 10 is preferably formed by the inorganic oxide with insulating properties, specifically, and can be by SiO
2, SiON, AlSiO, Al
2O
3Deng forming thickness is the film that 200 are above, 2000 are following.When the length direction along heating resistor 4a will insulate inorganic oxide layer 10 cut-outs, the cross sectional shape of insulation inorganic oxide layer 10 is that end (inclined plane) by the side of joining along conductor 5 and heating resistor 4a is the both ends of sharp-pointed shape and is clipped in the smooth summary concave shape that central portion constituted between these both ends.
On insulation inorganic oxide layer 10 and conductor 5, for example by SiAlON or Ta
2O
5The uniform wearability material forms protective layer 8.By this protective layer 8, the influence of the friction that produces in the time of can protecting insulation inorganic oxide layer 10 and conductor 5 not to be subjected to head work.In thermal head 1, and then also be provided with drive IC or the PCB (not shown) such as (Print Circuit Board) of the control heating resistor 4a that is used to switch on.This thermal head 1 is equipped on photosensitive formula printer or the thermo printer etc., gives heat-sensitive paper or paper tape (ind ribbon) by the heat that heating resistor 4a is produced, and prints.
In having above integrally-built thermal head 1; insulation inorganic oxide layer 10 is not subjected to also have the function that can suppress to cause by applying electric power the resistance change of heating resistor 4a the function of etching damage except having the function and the protection heating resistor 4a that prevent heating resistor 4a surface oxidation.
Below to the insulation inorganic oxide layer 10 inhibition cause that by applying electric power the function of the resistance change of heating resistor 4a is illustrated.
Fig. 3 is respectively for thermal head 1 (Fig. 1) with insulation inorganic oxide layer 10 and the thermal head 1 ' (Figure 20) that does not have the insulation inorganic oxide layer, step stress test (SST) result of the mensuration that the resistance value of expression heating resistor 4a changes with the size of the electric power that puts on heating resistor 4a.To each thermal head 1,1 ', give (after resistive film and the conductor 5 firm film forming) enforcement annealing in process (500 ℃) before test earlier.In addition, the thickness of each thermal head 1, the 1 ' protective layer that is had is 4.0 μ m, and the insulation inorganic oxide layer 10 that thermal head 1 is had is SiO
2Film (thickness is 600 ).
Above-mentioned step stress test is carried out under the following conditions.
(SST condition)
Apply pulse width=4.3ms
Apply pulse period=22.8ms
Apply pulse number=700 subpulses
In Fig. 3, ordinate is resistance change rate (%), and abscissa is to apply electric power (W).As can be seen from Figure 3, do not have a resistance value of 1 ' of insulation inorganic oxide layer, keep certain at 0～0.05W, resistance value begins to descend when electric power surpasses 0.05W applying, and reaches minimum of a value when applying electric power for 0.15W.When reaching this minimum of a value, resistance change rate is about-30%.And when applying electric power above 0.15W, resistance value sharply increases.In contrast to this, have a resistance value of 1 of insulation inorganic oxide layer 10, keep certain at 0～0.12W, resistance value begins to descend when electric power surpasses 0.12W applying, and reaches minimum of a value when applying electric power for 0.19W.When reaching this minimum of a value, resistance change rate is about-10%.And when applying electric power above 0.19W, resistance value sharply increases.
Yet thermal head generally should prevent the destruction of heating resistor, must work in certain the applying in the electric power scope of its resistance value.That is to say, because the resistance of thermal head is more little for the changing value that applies electric power, then make the certain electric power scope that applies of this resistance value big more, so the electric power that can apply thermal head institute is also just big more, thermal head can be worked more at high speed.
The result of the situation (thermal head 1 ') that does not have an insulation inorganic oxide layer more shown in Figure 3 and the situation (thermal head 1) with insulation inorganic oxide layer 10 as can be known, though the resistance value at initial stage is almost equal, but when applying electric power, have the variation of resistivity under the situation of insulation inorganic oxide layer, littler than the situation that does not have the insulation inorganic oxide layer.Thus, the electric power scope that the resistance value one of thermal head is regularly applied, under the situation with insulation inorganic oxide layer is 0～0.12W, and do not have the insulation inorganic oxide layer situation under be 0～0.05W, have the electric power scope that is applied under the situation of insulation inorganic oxide layer and want big, particularly, be about 2 times ( 0.12W/0.05W).
Fig. 4 is expression when the Thickness Variation of the protective layer of the thermal head with the inorganic oxide layer that insulate, the result of the test of stepstress.In Fig. 4, expression be that the thickness of protective layer is the result under 2.0 μ m, 4.0 μ m, the 6.0 μ m situations.Use SiO
2Film (thickness 600 ) is as the insulation inorganic oxide layer, and (after resistive film and the conductor 5 firm film forming) implement annealing in process (500 ℃) before test.Also have, the condition of SST test is identical with the step stress test of being implemented among Fig. 3.
In Fig. 4, ordinate is resistance change rate (%), and abscissa is to apply electric power (W).As can be seen from Figure 4, even the thickness difference of protective layer, resistance is also almost equal for the rate of change that applies electric power.That is to say that resistance change rate does not rely on and applies electric power.
From above Fig. 3 and result shown in Figure 4, the inventor as can be seen, by the insulation inorganic oxide layer existence, can suppress by the variation that applies the caused resistance value of electric power.How to suppress the variation of resistance value as for the insulation inorganic oxide layer, can carry out following supposition.
When electric power that thermal head applied increases, at first, cause that by this electric power that applies the temperature of heating resistor rises, make heating resistor become annealed condition by the rising of this temperature.At this moment, if do not have the insulation inorganic oxide layer at heating resistor, then above-mentioned annealing can promote to constitute the crystallization of the element of heating resistor (resistive film), because the change of the rule (in order) of this element, the resistance value of thermal head will descend shown in solid line A among Fig. 3 like that.But if having the insulation inorganic oxide layer at heating resistor, then owing to the rising of temperature, in annealing, the oxygen in the insulation inorganic oxide layer can activate or oxide can spread.And the oxygen of the activation of being somebody's turn to do or diffusion oxide can hinder the crystallization of the element that constitutes heating resistor, delay this crystallization.Consequently, shown in solid line B among Fig. 3, will suppress the decline (can keep resistance value) of the resistance value of thermal head.Also have, begin rapid increase, can think because heating resistor (resistive film) beginning oxidation and crystal combination begin to destroy from the resistance value of a certain power value thermal head.
Then, an embodiment to the manufacture method of thermal head shown in Figure 1 is illustrated.Fig. 5～Fig. 9 is an operation of the manufacture method of expression thermal head shown in Figure 1, (a) is cutaway view, (b) is vertical view.In the present embodiment, be to use have glaze heat-insulation layer 2 aluminum oxide substrate 3 (aluminum oxide substrate of glazing) as substrate.
At first, shown in Fig. 5 (a) and (b), in same vacuum, on glaze heat-insulation layer 2, continuous film forming forms resistive film 4 and conductor 5 comprehensively.Film forming can adopt sputtering method or Vacuum Coating method etc.Resistive film 4 is preferably formed by Ta-Si-O, the TaSiONb of easy high resistanceization, the cermet material of refractory metals such as Ti-Si-O, Cr-Si-O.Conductor 5 is preferably formed by aluminium.Because resistive film 4 is continuous film formings in same vacuum with conductor 5, so do not have oxide-film between resistive film 4 and conductor 5, resistive film 4 can be realized good combining closely with conductor 5.
After continuous film forming forms resistive film 4 and conductor 5, implement annealing in process.This annealing in process is in order to reduce the resistance variations of the heating resistor 4a of head after bringing into use, and applies big thermic load in advance, and the stable acceleration of resistance value of resistive film 4 is handled.
Then, shown in Fig. 6 (a) and (b), use photoetching technique, on conductor 5, form the resistance width W of the heating resistor that decision should form and conductor fig, conductor is with resist layer (not shown), conductor is removed with the conductor 5 and the resistive film 4 of resist layer institute unmasked portion, peeled off glass conductor resist layer.The scope of having removed conductor 5 and resistive film 4 in this operation is an interval region 6, shown in Fig. 6 (b), exposes glaze heat-insulation layer 2 from this interval region 6.Wet-type etching or RIE (reactive ion etching) can be used when removing conductor 5, RIE can be used when removing resistive film 4.
Then, shown in Fig. 7 (a) and (b), the opening portion resist layer Rr of the resistance length L of the heating resistor that the formation decision should form on conductor 5.By Wet-type etching or RIE this opening portion is removed with the unlapped conductor 5 of resist layer Rr institute, form the cross section and be down trapezoidal opening portion 7.At this moment, the end of opening portion 7 one sides of conductor 5 (common electrode 5a and a plurality of electrode special 5b) is the inclined plane.Pass through to the operation till this Fig. 7, expose a plurality of heating resistor 4a that determined resistance length L and resistance width W, simultaneously, conductor 5 is divided into common electrode 5a and electrode special 5b.That is to say that a plurality of heating resistor 4a and conductor 5 become the completion status of Figure 1 and Figure 2.Best described opening portion is to peel off (lift-off) resist layer with resist layer Rr.But, at conductor 5 is under the situation about being formed by aluminium, even common resist layer (resist layer that the angle on base does not cut), when Wet-type etching or RIE, owing on conductor 5, also carry out side etching, can access and the almost equal opening portion shape of the situation of peeling off resist layer shown in Fig. 7 (a), so even common resist layer is also passable.
If expose a plurality of heating resistor 4a, then shown in Fig. 8 (a) and (b), film forming forms insulation inorganic oxide layer 10 comprehensively under the state of residual opening portion usefulness resist layer Rr.Film forming can adopt methods such as sputter or ion beam sputtering.As Fig. 9 (a) and (b) shown in, by peel off opening portion with resist layer Rr and opening portion with insulation inorganic oxide layer resist layer Rr on 10 removed thereafter.By this operation, in the opening portion 7 of conductor 5, imbed insulation inorganic oxide layer 10, by this insulation inorganic oxide layer 10, cover a plurality of heating resistor a that expose.The cross sectional shape of insulation inorganic oxide layer 10, shown in Fig. 9 (a), be by along conductor 5 and the join end (inclined plane) of a side of heating resistor 4a be the both ends of sharp-pointed shape and be clipped in the smooth summary concave shape that central portion constituted between these both ends.
Preferred insulation inorganic oxide layer 10 is formed by the inorganic oxide with insulating properties, specifically, and can be by SiO
2, SiON, AlSiO, Al
2O
3Deng in any one form.And it is the film that 400 are above, 2200 are following that the inorganic oxide layer 10 that preferably insulate forms thickness.
Then, in order to improve the closely cooperating property with back operation formed diaphragm, remove specific thickness, expose the new face of insulate inorganic oxide layer 10 and conductor 5 by will insulate inorganic oxide layer 10 and conductor 5 such as reverse sputtering.In this reverse sputtering operation,,, thereby do not generate the deviation of the resistance value of heating resistor 4a so heating resistor 4a can not be subjected to etching damage owing to cover a plurality of heating resistor 4a by insulation inorganic oxide layer 10.In the present embodiment, remove the thickness of about 100 by this operation inorganic oxide layer 10 and conductor 5 that will insulate, the thickness of adjusting insulation inorganic oxide layer 10 at last is in the scope that 200 are above, 2000 are following.As long as in this scope, insulation inorganic oxide layer 10 just can give full play to the function that prevents a plurality of heating resistor 4a surface oxidations, the protection not etched function of damaging of a plurality of heating resistor 4a and head is finished after inhibition owing to the function of the resistance change that applies the heating resistor 4a that electric power causes.
And, on the new face of insulation inorganic oxide layer 10 that exposes and conductor 5, form by SiAlON or Ta
2O
5Uniform wearability diaphragm that material constitutes 8.The formation of this diaphragm 8 can be adopted bias sputtering method (bias spatter).By above operation, can obtain thermal head 1 as shown in Figure 1.
Yet, according to above-mentioned manufacture method, be after resistance width W that has determined heating resistor and conductor fig, form the opening portion resist layer Rr of the resistance length of decision heating resistor.In this case, there is the interval region 6 that exposes glaze heat-insulation layer 2, has formation opening portion resist layer Rr on the concavo-convex face.Therefore, it is relatively more difficult with resist layer Rr evenly to form the opening portion, and situation about departing from for the shape of abideing by the opening portion of designing is arranged.Promptly has the defective of the resistance length of regulation heating resistor accurately.Therefore, for the high precision int of the resistance length that realizes heating resistor, preferably use the manufacture method of second embodiment that the back will narrate.
Figure 10～Figure 19 is (a) cutaway view of the manufacture method of thermal head in the expression second embodiment of the invention, (b) vertical view.The manufacture method of this second embodiment is a kind of following method, promptly forms opening portion resist layer Rr on smooth film, uses this opening portion to stipulate the resistance length L of heating resistor accurately with resist layer Rr.In Figure 10～Figure 19, for first embodiment in identical in fact inscape, give with Fig. 1, Fig. 2, Fig. 5～Fig. 9 in identical symbol.In a second embodiment, also be to use have glaze heat-insulation layer 2 aluminum oxide substrate 3 (aluminum oxide substrate of glazing) as substrate.
At first, identical with first embodiment (Fig. 5), on glaze heat-insulation layer 2, in same vacuum, form resistive film 4 and conductor 5 in the mode of continuous film forming comprehensively, implement annealing in process afterwards.Film forming can adopt sputtering method or Vacuum Coating method etc.Preferably resistive film 4 can be formed by Ta-Si-O, the TaSiONb of easy high resistanceization, the cermet material of refractory metals such as Ti-Si-O, Cr-Si-O.Preferred conductor 5 is formed by aluminium.Because resistive film 4 is continuous film formings in same vacuum with conductor 5, so do not have oxide-film between resistive film 4 and conductor 5, resistive film 4 can be realized good closely cooperating with conductor 5.
Then, shown in Figure 10 (a) and (b), the opening portion resist layer Rr of the resistance length L of the heating resistor that the formation decision should form on conductor 5.At this moment, because the surface of conductor 5 is smooth, so can correctly form opening portion resist layer Rr.Then, shown in Figure 11 (a) and (b), remove this opening portion with the unlapped conductor 5 of resist layer Rr, form the cross section and be down trapezoidal opening portion 7 by Wet-type etching or RIE.Expose a plurality of heating resistor 4a ' that determined the resistance length L from this opening portion 7, in addition,, conductor 5 is divided into common electrode 5a and electrode special 5b by this opening portion 7.
Best described opening portion is formed by peeling off resist layer with resist layer Rr.But, at conductor 5 is under the situation about being formed by aluminium, even common resist layer (resist layer that the angle on base is not cut), when Wet-type etching or RIE, owing on conductor 5, also produce side etching, can access and use the almost equal opening portion shape of the situation of peeling off resist layer shown in Figure 11 (a), so even common resist layer is also passable.
If a plurality of heating resistor 4a ' expose, then shown in Figure 12 (a) and (b), with the state of residual opening portion with resist layer Rr, film forming forms insulation inorganic oxide layer 10 comprehensively.Film forming can adopt methods such as sputter or ion beam milling.As Figure 13 (a) and (b) shown in, by peel off opening portion with resist layer Rr and opening portion with insulation inorganic oxide layer resist layer Rr on 10 removed thereafter.By Figure 12 and operation shown in Figure 13, in the opening portion 7 of conductor 5, imbed insulation inorganic oxide layer 10, by this insulation inorganic oxide layer 10, cover the surface of the heating resistor 4a ' that exposes.Shown in Figure 13 (a), the cross sectional shape of insulation inorganic oxide layer 10 is to be the both ends of sharp-pointed shape and to be clipped in the smooth summary concave shape that central portion constituted between these both ends by the end (inclined plane) along opening portion one side of conductor 5.
Same with first embodiment, the inorganic oxide layer 10 that preferably insulate is formed by the inorganic oxide with insulating properties, specifically, and can be by SiO
2, SiON, AlSiO, Al
2O
3In any one form.And it is the film that 400 are above, 2200 are following that the inorganic oxide layer 10 that preferably insulate forms thickness.
Then, shown in Figure 14 (a) and (b), the resistance width W of the heating resistor that the formation decision should form on conductor 5 and insulation inorganic oxide layer 10 and the conductor resist layer Re of conductor fig.Shown in Figure 15 (a) and (b), if form the conductor resist layer, then remove the conductor 5 that exposes with resist layer Re from conductor by Wet-type etching or RIE, expose resistive film 4 from removing part.Then, shown in Figure 16 (a) and (b), remove the insulation inorganic oxide layer 10 that is exposed with resist layer Re from conductor, expose resistive film 4 from this removal part by Wet-type etching or RIE.And, shown in Figure 17 (a) and (b), remove the resistive film 4 that is exposed with resist layer Re from conductor by RIE.Having removed resistive film 4, conductor 5, and the scope of insulation inorganic oxide layer 10 by the operation of above Figure 14～Figure 17, is interval region 6.Shown in Figure 17 (b), expose glaze heat-insulation layer 2 from this interval region 6.By this interval region 6, heating resistor 4a ' is divided into a plurality of heating resistor 4a, and stipulates the resistance width of each heating resistor 4a.
After forming interval region 6, peel off conductor resist layer Re.Shown in Figure 18 (a) and (b),, expose common electrode 5a and a plurality of electrode special 5b, and then expose the insulation inorganic oxide layer 10 that covers each heating resistor 4a surface from the removal part of conductor with resist layer Re.
Remove conductor with resist layer Re after, same with first embodiment, only remove specific thickness by will insulate inorganic oxide layer 10 and conductor 5 of methods such as reverse sputtering, expose the new face of this insulation inorganic oxide layer 10 and conductor 5.In this reverse sputtering operation,,, thereby do not produce the deviation of the resistance value of heating resistor 4a so heating resistor 4a can not be subjected to etching damage owing to cover a plurality of heating resistor 4a by insulation inorganic oxide layer 10.In this operation, with the thickness of insulation inorganic oxide layer 10 and about 100 of conductor 5 removals, the thickness of adjusting insulation inorganic oxide layer 10 at last is in the scope that 200 are above, 2000 are following.
And, shown in Figure 19 (a) and (b), on the new face of insulation inorganic oxide layer 10 that exposes and conductor 5, form by SiAlON or Ta
2O
5Uniform wearability diaphragm that material constitutes 8.The formation of diaphragm 8 can be adopted the bias sputtering method.By above operation, can obtain thermal head 100.In the prepared thermal head 100 by second embodiment, insulation inorganic oxide layer 10 only exists on each heating resistor 4a.
In each above embodiment, owing to utilize the opening portion to form the opening portion 7 of exposing a plurality of heating resistor 4a with resist layer Rr, film forming forms insulation inorganic oxide layer 10 under the state of residual this opening portion usefulness resist layer Rr, so insulation inorganic oxide layer 10 can be imbedded in the opening portion 7.Like this; because the surface of a plurality of heating resistor 4a is insulated inorganic oxide layer 10 and covers; so in the operation of back; by insulation inorganic oxide layer 10; can prevent the surface oxidation of a plurality of heating resistor 4a; simultaneously, the infringement that can also protect a plurality of heating resistor 4a not produced by etching or sputter.That is to say, can fully suppress deviation by surface oxidation or the caused a plurality of heating resistor 4a resistance values of etching damage.Thus, can need not finishing processing etc. in the past, also not shorten the defective in a life-span.
And, in described each embodiment, owing to after opening portion 7 forms, form insulation inorganic oxide layer 10 again, so insulation inorganic oxide layer 10 and a plurality of heating resistor 4a (the resistance length of a plurality of heating resistor 4a) can realize self-regulation (self alignment).And then, by insulation inorganic oxide layer 10 conductor 5 is covered on each heating resistor 4a, can eliminate the heat loss under the situation that makes conductor 5 coverings.In the present embodiment, conductor width and resistance width also can be realized self-regulation.
And, in described each embodiment, owing to be in same vacuum, resistive film 4 and conductor 5 to be carried out continuous film forming, therefore so do not have the existence of oxide layer between resistive film 4 and the conductor 5, can eliminate deviation by the resistance value of the caused heating resistor 4a of reason such as connecting airtight between this resistive film 4 and the conductor 5 be bad.
And then, according to the various embodiments described above, owing to have thickness on a plurality of heating resistor 4a is insulation inorganic oxide layer 10 more than 200 , below 2000 , so when applying the electric power increase, can postpone by the caused annealing effect of the electric power of this increase (constituting the crystallization of the element of heating resistor 4a).Its result, the resistance value of thermal head applies the variation of electric power relatively, and is littler than the thermal head that does not have the insulation inorganic oxide layer.That is to say that even apply bigger electric power, this resistance value also can be kept necessarily, so can realize the work more at a high speed of thermal head.
In each above embodiment, though be to be illustrated about the glazing type thermal head 1 that glaze heat-insulation layer 2 forms on aluminum oxide substrate 3 comprehensively, but the present invention also is applicable to local glazing (glaze) or real edge (real edge), and two-sided glazing (double glaze), DOS (DepositOnSilicon) wait other type.
In addition, use aluminium oxide in the present embodiment, but also can use the silica substrate to replace aluminum oxide substrate as head substrate.Under the situation of using the silica substrate, preferably use heat-insulation layer that vacuum coating or sputtered film by oxide constitute as heat-insulation layer.
According to the present invention; owing in exposing the opening portion of a plurality of heating resistors, imbedded the insulation inorganic oxide layer; so cover by the surface of this insulation inorganic oxide layer to a plurality of heating resistors; can prevent the surface oxidation of a plurality of heating resistors; simultaneously, can also protect a plurality of heating resistors not to be subjected to etched infringement.Thus, can suppress the deviation of the resistance value between a plurality of heating resistors, and not need finishing to handle.And, according to the present invention, owing to have the insulation inorganic oxide layer at a plurality of heating resistors, so can suppress owing to applying the annealing effect (constituting the crystallization of the element of heating resistor) that electric power causes, the resistance value that reduces heating resistor is with respect to the variation that applies electric power.
Claims (19)
1. thermal head, have on substrate continuous film forming, a plurality of heating resistors and respectively with the conductor of the both ends conducting of the resistance length direction of a plurality of heating resistors, it is characterized in that:
Formation makes the opening portion that expose on the surface of described a plurality of heating resistors on described conductor, in this opening portion, is provided with by the insulation inorganic oxide layer that inorganic oxide constituted with insulating properties.
2. thermal head according to claim 1 is characterized in that: described insulation inorganic oxide layer is by SiO
2, SiON, AlSiO, Al
2O
3In any one formation.
3. thermal head according to claim 1 is characterized in that: also have the protective layer that forms on described insulation inorganic oxide layer and described conductor, the thickness of described insulation inorganic oxide layer is more than 200 , below 2000 .
4. thermal head according to claim 1, it is characterized in that: when the resistance length direction along described resistance heater cuts off described insulation inorganic oxide layer, it is slightly trapezoidal that the cross sectional shape of described opening portion is, the cross sectional shape of described insulation inorganic oxide layer, the both ends that join with described conductor are sharp-pointed shape, and the middle body that is clipped between the both ends is smooth summary concave shape.
5. thermal head according to claim 1 is characterized in that: described conductor is an aluminium conductor.
6. the manufacture method of a thermal head is characterized in that having following operation:
Continuous film forming forms the operation of resistive film and conductor on substrate;
The conductor that on described conductor, forms the resistance width of decision heating resistor and conductor fig with resist layer after, remove this conductor with resist layer unlapped conductor of institute and resistive film, and remove the operation of this conductor with resist layer;
The opening portion of resistance length that on described conductor, forms decision heater resistance with resist layer after, remove this opening portion with the unlapped conductor of resist layer, formation makes the operation of the opening portion that a plurality of heating resistors expose;
With under the state of resist layer, comprising the operation that forms on the substrate surface of described opening portion with resist layer and a plurality of heating resistors of exposing by the insulation inorganic oxide layer that inorganic oxide constituted in residual described opening portion with insulating properties; And
Remove described opening portion with resist layer and this opening portion operation with the insulation inorganic oxide layer on the resist layer.
7. according to the manufacture method of the thermal head described in the claim 6, it is characterized in that: by SiO
2, SiON, AlSiO, Al
2O
3In any one form described insulation inorganic oxide layer.
8. according to the manufacture method of the thermal head described in the claim 6; it is characterized in that: after removing the operation of described opening portion with resist layer and described insulation inorganic oxide layer; have the surface of pruning described conductor and described insulation inorganic oxide layer, on this conductor pruned and insulation inorganic oxide layer, form the operation of protective layer.
9. the manufacture method of the thermal head described in according to Claim 8; it is characterized in that: form described insulation inorganic oxide layer with the thickness film forming more than 400 , below 2200 earlier; in the film formed operation of described protection, it is more than 200 , below 2000 that the thickness of described insulation inorganic oxide layer is cut again.
10. according to the manufacture method of the thermal head described in the claim 6, it is characterized in that: form described opening portion resist layer by peeling off resist layer, by the method for peeling off remove this opening portion with resist layer and this opening portion with the insulation inorganic oxide layer on the resist layer.
11. the manufacture method according to the thermal head described in the claim 6 is characterized in that: described conductor is formed by aluminium conductor, is removed by Wet-type etching or reactive ion etching.
12. the manufacture method according to the thermal head described in the claim 6 is characterized in that: remove described resistive film by reactive ion etching.
13. the manufacture method of a thermal head is characterized in that having following operation:
Continuous film forming forms the operation of resistive film and conductor on substrate;
On described conductor, form the opening portion resist layer of the resistance length of decision heating resistor, remove this opening portion with resist layer unlapped conductor also formation make the operation of the opening portion that a plurality of heating resistors expose;
, comprising on the substrate surface of described opening portion with resist layer and the described a plurality of heating resistors that expose with under the state of resist layer in residual described opening portion, forming operation by the insulation inorganic oxide layer that inorganic oxide constituted with insulating properties;
Remove described opening portion with resist layer and described opening portion with the insulation inorganic oxide layer on the resist layer after, form the operation of the conductor of the resistance width of decision heating resistor and conductor fig at substrate surface with resist layer;
The operation of the conductor that removal is exposed with resist layer from described conductor;
The operation of the insulation inorganic oxide layer that removal is exposed with resist layer from described conductor;
The operation of the resistive film that removal is exposed with resist layer from described conductor; And
Remove the operation of described conductor with resist layer.
14. the manufacture method according to the thermal head described in the claim 13 is characterized in that: by SiO
2, SiON, AlSiO, Al
2O
3In any one form described insulation inorganic oxide layer.
15. manufacture method according to the thermal head described in the claim 13; it is characterized in that: removing described conductor with after the operation of resist layer; have the surface of pruning described conductor and described insulation inorganic oxide layer, on this conductor pruned and insulation inorganic oxide layer, form the operation of protective layer.
16. manufacture method according to the thermal head described in the claim 15; it is characterized in that: form described insulation inorganic oxide layer with the thickness film forming more than 400 , below 2200 earlier; in the film formed operation of described protection, it is more than 200 , below 2000 that the thickness of described insulation inorganic oxide layer is cut again.
17. the manufacture method according to the thermal head described in the claim 13 is characterized in that: form described opening portion resist layer by peeling off resist layer, by the method for peeling off remove this opening portion with resist layer and this opening portion with the insulation inorganic oxide layer on the resist layer.
18. the manufacture method according to the thermal head described in the claim 13 is characterized in that: in this manufacture method, described conductor is formed by aluminium conductor, is removed by Wet-type etching or reactive ion etching.
19. the manufacture method according to the thermal head described in the claim 13 is characterized in that: in this manufacture method, described resistive film is to be removed by reactive ion etching.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002320779 | 2002-11-05 | ||
| JP2002320779A JP2004154969A (en) | 2002-11-05 | 2002-11-05 | Thermal head and its manufacturing process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1500645A true CN1500645A (en) | 2004-06-02 |
| CN1265969C CN1265969C (en) | 2006-07-26 |
Family
ID=32801524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200310114109 Expired - Fee Related CN1265969C (en) | 2002-11-05 | 2003-11-05 | Heat sensitive head and production method |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2004154969A (en) |
| CN (1) | CN1265969C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101186153B (en) * | 2006-11-20 | 2010-12-08 | 索尼株式会社 | Thermal head and method of manufacturing thermal head |
| CN101932452B (en) * | 2008-01-31 | 2012-08-08 | 京瓷株式会社 | Recording head and recording device comprising the same |
| CN103946028A (en) * | 2011-11-28 | 2014-07-23 | 京瓷株式会社 | Thermal head and thermal printer provided with same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5317723B2 (en) * | 2009-01-28 | 2013-10-16 | 京セラ株式会社 | RECORDING HEAD AND RECORDING DEVICE HAVING THE SAME |
| JP2010179551A (en) * | 2009-02-05 | 2010-08-19 | Toshiba Hokuto Electronics Corp | Thermal head and method for manufacturing the same |
-
2002
- 2002-11-05 JP JP2002320779A patent/JP2004154969A/en not_active Withdrawn
-
2003
- 2003-11-05 CN CN 200310114109 patent/CN1265969C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101186153B (en) * | 2006-11-20 | 2010-12-08 | 索尼株式会社 | Thermal head and method of manufacturing thermal head |
| CN101932452B (en) * | 2008-01-31 | 2012-08-08 | 京瓷株式会社 | Recording head and recording device comprising the same |
| CN103946028A (en) * | 2011-11-28 | 2014-07-23 | 京瓷株式会社 | Thermal head and thermal printer provided with same |
| CN103946028B (en) * | 2011-11-28 | 2016-01-20 | 京瓷株式会社 | Thermal head and possess the thermal printer of this thermal head |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1265969C (en) | 2006-07-26 |
| JP2004154969A (en) | 2004-06-03 |
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