CN1499625A - Soldering pad with dual copper inlaid interconnection wire and preparation method - Google Patents
Soldering pad with dual copper inlaid interconnection wire and preparation method Download PDFInfo
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- CN1499625A CN1499625A CNA021467242A CN02146724A CN1499625A CN 1499625 A CN1499625 A CN 1499625A CN A021467242 A CNA021467242 A CN A021467242A CN 02146724 A CN02146724 A CN 02146724A CN 1499625 A CN1499625 A CN 1499625A
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- weld pad
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
A first stacked insulation structure with a flat surface is setup at substrate. Multiple first copper plugs are inlaid in the first stacked insulation structure. From first to n-1 layers of copper wire are inlaid in the first stacked insulation structure. Each copper wire layer is electrically connected through first copper plugs. Second insulation layer is setup on first stacked insulation structure and n-1 layer of copper wire. Multiple second copper plugs are inlaid in the second stacked insulation structure. Second copper plugs are connected to n-1 layer of copper wire. Nth layer of A1Cu wire including a soldering pad and an intraconnection wire is setup on first insulation layer and second copper plugs. A protective layer is setup on Nth layer of A1Cu wire and second insulation layer. An opening on the protective layer exposes the soldering pad.
Description
Technical field
The invention relates to a kind of weld pad and manufacture method thereof of copper dual-damascene intraconnections, particularly the weld pad of the copper dual-damascene intraconnections that forms simultaneously relevant for a kind of and top layer intraconnections.
Background technology
As everyone knows, there are some problems in the lead processing procedure of copper interconnects and the technology of copper encapsulation procedure, the problem of copper interconnects technology must be solved, and electronic product could be circulated to the consumer apace.Use present technology, then problem is that gold thread (godwire) (being sealing wire) can't directly contact the copper metal layer of the superiors, because copper is to the non-constant of reliability of gold thread welding.In addition,, then can't use, because easily corrode on the copper that exposes surface if the lead weld pad of copper containing surfaces is exposed in the environment.
A kind of processing procedure of avoiding copper to the problem of gold thread welding is to use aluminium to contact with gold thread as the superiors' metal.Its major defect is:
Yet, use aluminum metal layer to need extra light shield step and extra lithography step, for example reactive ion etching.The step that this extra step need cooperate prerinse and photoresistance to remove, but also need extra processing procedure material, extra time and extra cost.
Use aluminum metal layer to be, after forming last copper metal structure (being the top layer intraconnections),, and on this pair dielectric layer, form the insulating barrier of one deck pi (poyimide) layer in the two dielectric layers of copper surface deposition as the processing procedure of the contact between copper and the gold thread.And, in above-mentioned two dielectric layers and polyimide, expose a part of copper metal layer.The copper metal layer that exposes provides as gold thread contact usefulness.Yet the copper metal layer that exposes does not directly contact with gold thread.Therefore, on traditional processing procedure, need to increase the layer of aluminum metal level, and need one extra weld pad processing procedure to form aluminium welding pad; Then, deposition one deck barrier layer, it is in order to mutual isolation copper and aluminum metal.Therefore, the barrier layer of deposition contacts the copper surface that exposes, and is covered in the surface of polyimide.Afterwards, on the surface of whole barrier layer, form the layer of aluminum metal level.Afterwards this bilayer (barrier layer and aluminium lamination) material is carried out lithography, and use light-sensitive surface (being the photoresistance film) to define the pattern of this double-deck material.After removing the double-deck material of part by etching and defining pattern, light-sensitive surface is removed.Therefore gold thread can be connected to aluminium welding pad, and this aluminium welding pad contacts with copper metal layer via barrier layer.
Above-mentioned traditional method has solved the problem of the adhesive force between copper pad and the sealing wire (being gold thread), and still, so method but needs extra light shield to define aluminium lamination, to form aluminium welding pad on the top layer intraconnections.And extra light shield has increased manufacturing cost, and can improve the complexity of weld pad processing procedure.
Summary of the invention
The purpose of this invention is to provide a kind of method that forms the weld pad of copper dual-damascene intraconnections,, no longer carry out the weld pad processing procedure, reach the purpose of the complexity that reduces manufacturing cost and weld pad processing procedure by after forming the top layer intraconnections.
Another object of the present invention provides a kind of method that forms the weld pad of copper dual-damascene intraconnections, by the weld pad that does not have the copper dual-damascene of aluminium welding pad intraconnections is provided, reaches the purpose of the complexity that reduces manufacturing cost and weld pad processing procedure.
The object of the present invention is achieved like this: a kind of weld pad of copper dual-damascene intraconnections, it is characterized in that: it comprises the steps: that one first stacked insulation structure that will have a flat surfaces is arranged in the substrate, the first bronze medal connector and ground floor to (n-1) layer copper conductor layer are embedded in first stacked insulation structure, wherein the surface of (n-1) layer copper conductor layer and the surface of first stacked insulation structure are coplines, wherein n is the integer greater than 3, and wherein each copper conductor layer is to electrically connect by the first bronze medal connector.Second insulating barrier is arranged on first stacked insulation structure and (n-1) layer copper conductor layer.The first bronze medal connector is embedded in second insulating barrier, and the first bronze medal connector is to be connected to (n-1) layer copper conductor layer.N layer AlCu conductor layer is arranged on second insulating barrier and the second bronze medal connector, and is connected to the first bronze medal connector, wherein n layer AlCu conductor layer comprises weld pad and intraconnections.Protective layer is arranged on the n layer AlCu layer and second insulating barrier, and wherein this protective layer has the opening that exposes the weld pad surface.
In addition, the present invention also provides a kind of manufacture method of weld pad of copper dual-damascene intraconnections, the method is as described below: formation has first stacked insulation structure of flat surfaces in substrate, and inlay the first bronze medal connector and ground floor to the (n-1) layer copper conductor layer in first stacked insulation structure, wherein the surface of (n-1) layer copper conductor layer and the surface of first stacked insulation structure are coplines, wherein n is the integer greater than 3, and wherein each copper conductor layer is to electrically connect by the first bronze medal connector; Then, form one second insulating barrier on first stacked insulation structure and (n-1) layer copper conductor layer, and inlay second bronze medal and plug in second insulating barrier, wherein the first bronze medal connector is to be connected to (n-1) layer copper conductor layer; Afterwards, form n layer AlCu conductor layer on first insulating barrier and the second bronze medal connector, and be connected to the second bronze medal connector, wherein n layer AlCu conductor layer is to comprise a weld pad and an intraconnections; Afterwards, form layer protective layer on the n layer AlCu layer and second insulating barrier, wherein this protective layer has opening and exposes the weld pad surface.
Describe in detail below in conjunction with the preferred embodiment conjunction with figs..
Description of drawings
Fig. 1-Fig. 6 is a manufacture method generalized section of the present invention.
Embodiment
Consult Fig. 1-shown in Figure 6, the manufacturing process of the weld pad of copper dual-damascene intraconnections of the present invention.Be to be example in the following description with n layer intraconnections.In these figure, simply indicating (n-2) layer intraconnections (is M
N-2), (n-1) layer intraconnections (be M
N-1) and n layer intraconnections (be M
n).
Consult shown in Figure 1ly, the manufacturing process of the weld pad of copper dual-damascene intraconnections of the present invention comprises the steps:
It should be noted that copper connector 204 and the 1st layer to (n-1) layer copper conductor 206 is made of copper metal and the barrier layer between copper metal and stacked insulation structure 202.And this barrier layer (not illustrating) is not to be selectable processing procedure, and its effect is for avoiding copper atom to diffuse in the insulation material.
At stacked insulation structure 202 and (n-1) layer copper conductor layer 206 (is M
N-1) the last insulating barrier 212 that forms.The material of insulating barrier 212 can be silica.Afterwards, carry out copper list damascene process, etching isolation layer 212 is with in wherein forming opening 210.
Then consult shown in Figure 2, deposited copper on insulating barrier 212, and inserting out in 0210.And, before the deposited copper metal and form one deck barrier layer, contact with insulating barrier 212 in order to avoid copper atom.Carry out cmp (CMP) processing procedure afterwards, to remove unnecessary copper metal and barrier layer.By single damascene process copper connector 214 is embedded in the insulating barrier 212.Copper connector 214 be electrically connected to (n-1) layer copper conductor layer 206 (be M
N-1) in.
Then consult shown in Figure 3, deposition one deck AlCu layer 216 on insulating barrier 212 and copper connector 214.
Then consult shown in Figure 4ly, utilize lithography that AlCu layer 216 is patterned to n layer AlCu conductor layer 216a.This n layer AlCu conductor layer 216a comprises top layer intraconnections A and weld pad B, and is connected to copper connector 214.
Then consult shown in Figure 5ly, on n layer AlCu conductor layer 216a and insulating barrier 212, form layer protective layer 220.This protective layer 220 comprises one deck silicon oxide layer and one deck silicon nitride layer.
Then consult shown in Figure 6ly, utilize micro image etching procedure, with protective layer 220 patternings, to form the surface that opening 210 exposes weld pad B.
Below will cooperate shown in Figure 6ly, the structure of the weld pad of copper dual-damascene intraconnections will be described.The stacked insulation structure 202 that will have a flat surfaces 202 ' is arranged in the substrate 200, and wherein substrate 200 comprises that many semiconductor subassemblies are formed at wherein.Copper connector 204 and ground floor to the (n-1) layer copper conductor layer 206 is embedded in the stacked insulation structure 202, and wherein n is the integer greater than 3.Each layer copper conductor layer 206 is to electrically connect by copper connector 204.The surface 206 ' of (n-1) layer copper conductor layer 206 () and the surface 202 ' of stacked insulation structure 202 are coplines.Insulating barrier 21 2 is arranged on stacked insulation structure 202 and (n-1) layer copper conductor layer 206.Copper connector 214 is embedded in the insulating barrier 212, and copper connector 214 is to be connected to (n-1) layer copper conductor layer 206.N layer AlCu conductor layer 216a is arranged on insulating barrier 212 and the copper connector 214, and is connected to copper connector 214.Wherein, n layer AlCu conductor layer 216a is made of weld pad B and top layer intraconnections A.Protective layer with opening 220 is arranged on n layer AlCu layer 216a and the insulating barrier 212, and its split shed 220 exposes the surface of weld pad B.
In the present invention, weld pad is formed in the top layer internal connecting layer, i.e. n layer AlCu conductor layer, and it does not need other weld pad processing procedure.Moreover, because weld pad of the present invention is for being that AlCu constitutes,, copper interconnects of the present invention do not contact so having with the Al weld pad, and the adhesion issues between initiation Cu and the Al.
Though the present invention discloses as above with preferred embodiment, so it is not in order to restriction the present invention, anyly has the knack of this skill person, and without departing from the spirit and scope of the present invention, institute does and changes and retouching, all belongs within protection scope of the present invention.
Claims (9)
1, a kind of weld pad of copper dual-damascene intraconnections, it is characterized in that: it includes substrate; First stacked insulation structure with a flat surfaces is arranged in this substrate; Multiple first copper plugs is to be embedded in this first stacked insulation structure; The copper conductor layer of ground floor to the n-1 layer is to be embedded in this first stacked insulation structure, and the surface of this n-1 layer copper conductor layer and the surface of this first stacked insulation structure are coplines; Wherein this n is the integer greater than 3, and wherein each copper conductor layer is to electrically connect by this first bronze medal connector; Second insulating barrier is to be arranged on this first stacked insulation structure and this n-1 layer copper conductor layer; Most second bronze medal connectors are to be embedded in this second insulating barrier, and this second bronze medal connector is to be connected to this n-1 layer copper conductor layer; N layer AlCu conductor layer is to be arranged on this first insulating barrier and the second bronze medal connector, and is connected to this second bronze medal connector, and this n layer AlCu conductor layer comprises a weld pad and an intraconnections; Protective layer is to be arranged on this n layer AlCu layer and this second insulating barrier, and this protective layer has an opening and exposes this weld pad.
2, the weld pad of copper dual-damascene intraconnections according to claim 1 is characterized in that: the material of this first stacked insulation structure is a silicon dioxide.
3, the weld pad of copper dual-damascene intraconnections according to claim 1 is characterized in that: the material of this second insulating barrier is a silicon dioxide.
4, the weld pad of copper dual-damascene intraconnections according to claim 1 is characterized in that: this protective layer comprises an one silica layer and a silicon nitride layer.
5, a kind of manufacture method of weld pad of copper dual-damascene intraconnections, it is characterized in that: it comprises the steps:
(1) provides a substrate;
(2) formation has first stacked insulation structure of a flat surfaces in this substrate;
(3) inlay multiple first copper plugs and ground floor to the n-1 layer copper conductor layer in this first stacked insulation structure, wherein the surface of the surface of this n-1 layer copper conductor layer and this first stacked insulation structure is a copline, wherein n is the integer greater than 3, and wherein each copper conductor layer is to electrically connect by this first bronze medal connector;
(4) form second insulating barrier on this first stacked insulation structure and this n-1 layer copper conductor layer;
(5) inlay most second bronze medals and plug in this second insulating barrier, wherein this first bronze medal connector is to be connected to this n-1 layer copper conductor layer;
(6) form n layer AlCu conductor layer on this second insulating barrier and this second bronze medal connector, and be connected to this second bronze medal connector, this n layer AlCu conductor layer comprises a weld pad and an intraconnections;
(7) form a protective layer on this n layer AlCu layer and this second insulating barrier, wherein this protective layer has an opening and exposes this weld pad.
6, the manufacture method of the weld pad of copper dual-damascene intraconnections according to claim 5 is characterized in that: this first stacked insulation structure is the silicon dioxide layer that piles up.
7, the manufacture method of the weld pad of copper dual-damascene intraconnections according to claim 5 is characterized in that: the material of this second insulating barrier is a silicon dioxide.
8, the manufacture method of the weld pad of copper dual-damascene intraconnections according to claim 5 is characterized in that: the method that forms this n layer AlCu conductor layer that comprises this weld pad and this intraconnections comprises:
Depositing Al Cu layer is on this first insulating barrier and this first bronze medal connector; And this AlCu layer of patterning, comprise this AlCu conductor layer of this weld pad and intraconnections with formation.
9, the manufacture method of the weld pad of copper dual-damascene intraconnections according to claim 5 is characterized in that: this protective layer comprises an one silica layer and a silicon nitride layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA021467242A CN1499625A (en) | 2002-11-04 | 2002-11-04 | Soldering pad with dual copper inlaid interconnection wire and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA021467242A CN1499625A (en) | 2002-11-04 | 2002-11-04 | Soldering pad with dual copper inlaid interconnection wire and preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1499625A true CN1499625A (en) | 2004-05-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA021467242A Pending CN1499625A (en) | 2002-11-04 | 2002-11-04 | Soldering pad with dual copper inlaid interconnection wire and preparation method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100382292C (en) * | 2006-07-18 | 2008-04-16 | 威盛电子股份有限公司 | Welding pad structure for electronic device |
| CN101034681B (en) * | 2006-03-08 | 2012-04-04 | 冲电气工业株式会社 | Method of manufacturing semiconductor device |
-
2002
- 2002-11-04 CN CNA021467242A patent/CN1499625A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101034681B (en) * | 2006-03-08 | 2012-04-04 | 冲电气工业株式会社 | Method of manufacturing semiconductor device |
| CN100382292C (en) * | 2006-07-18 | 2008-04-16 | 威盛电子股份有限公司 | Welding pad structure for electronic device |
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