CN1492245A - Method for producing long wave planar photoelectric detector micro ball lens - Google Patents
Method for producing long wave planar photoelectric detector micro ball lens Download PDFInfo
- Publication number
- CN1492245A CN1492245A CNA021339295A CN02133929A CN1492245A CN 1492245 A CN1492245 A CN 1492245A CN A021339295 A CNA021339295 A CN A021339295A CN 02133929 A CN02133929 A CN 02133929A CN 1492245 A CN1492245 A CN 1492245A
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- China
- Prior art keywords
- photoelectric detector
- ball lens
- ion beam
- micro ball
- making
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
The present invention relates to the making process of micro spherical lens for long wave planar photoelectric detector, and features that the micro spherical lens is made through Ar ion beam etching on the substrate in photosensitive plane of photoelectric detector. Applying the micro spherical lens in the back side of the photoelectric detector die can raise the coupling efficiency between the small-junction area photoelectric detector die and fiber and raise the coupling efficiency of photoelectric detector.
Description
Technical field the present invention relates to a kind of method for making of micro ball lens, is applied to the making of long wave planar photoelectric detector micro ball lens.
The conventional method that background technology is made long wave planar photoelectric detector is: on compound semiconductor (as InP etc.) single crystalline substrate, each epitaxial loayer of epitaxial growth has obtained epitaxial wafer, is made into the photodetector tube core by carry out various semiconductor device fabrication process on epitaxial wafer.When incident light shone the photosurface (just according to) of photodetector from epi-layer surface, after its energy was absorbed, transition formed photo-generated carrier, and passed depletion layer with the saturated velocity drift, produced photocurrent at external circuit, realized opto-electronic conversion.In order to improve the Frequency Response of photodetector, present photodetector generally adopts incident light to shine the structure of the photosurface (back of the body shines) of photodetector from substrate surface.Along with the high-speed applications of photodetector, require photodetector to have enough wide bandwidth.The area (reach and reduce junction capacity) that reduces planar junction is the effective way that obtains the broadband light electric explorer.Though little junction area has improved the bandwidth of operation of photodetector, the thing followed has reduced the coupling efficiency of photodetector with optical fiber again.
Summary of the invention the objective of the invention is: at the little junction area of present photodetector, invent a kind of photodetector of new construction, both guaranteed that photodetector had wide bandwidth of operation, and have high coupling efficiency when it is coupled with optical fiber.This photodetector adopts the back-illuminated type structure, two electrode homonymies, it is characterized in that: in the substrate surface of photodetector tube core photosurface, adopt the method for ion beam etching to make a ball-type lenticule, its effect is that the emergent light with optical fiber focuses on the little photosensitive area of absorption layer, guarantee that incident light fully is absorbed in depletion region, to improve the coupling efficiency of photodetector tube core with optical fiber.
The method for making that ion beam etching is made ball-type lenticule mask is: adopt the cylindrical photoresist that photoetching process is made to carry out melting, the temperature and time by the control melting makes the mask after the melting become spherical shape.Ion beam etching is made the lenticular method of ball-type: utilize the Ar that carries energy
+The bombardment of ion realizes the ise of target material (InP).
Appended drawings is a process schematic representation of the present invention.
[1] is photoresist among the figure; [2] be the InP substrate.
Embodiment InP substrate [2] back side of (a) at first in the accompanying drawings evenly is coated with the photoresist (photoresist) [1] of last layer desired thickness with glue spreader, by exposure, develop to obtain shape as (b) in the accompanying drawing, under nitrogen protection, the photoresist of (b) is carried out melting and gets (c) in the accompanying drawing; (c) put into the logical Ar gas of ion beam etching machine, (c) carried out ion beam etching, obtain at last (d) in the accompanying drawing.The ball-type lenticule is made and is finished.
Introduce one embodiment of the present of invention below in conjunction with accompanying drawing:
1, adopt at the back side of InP substrate [2] to execute and change glue spreader coating one uniform photoresist, thickness 3～5 μ m, must accompanying drawing in the figure of (a);
2, the infrared litho machine of employing makes the figure as (b) in the accompanying drawing by lithography, and the center of cylindrical photoresist and photodetector photosurface center are aligned;
3, under nitrogen protection, with the cylindrical photoresist heating melting of (b) in the accompanying drawing, the cooling post shrinkage becomes the shape of (c) in the accompanying drawing;
4, with the figure of (c) in the accompanying drawing, put into the ion beam etching machine, vacuumize, the substrate vacuum degree is evacuated to 5.5 * 10
-3Pa, Ar
+The ion energy scope is 500～600eV, and line is 50～60mA, and beam diameter is φ 15cm, and the incident angle of ion beam is 75 °, and substrate is with the rotating speed rotation of 5～10 commentaries on classics/min.In the above conditions, the figure of (c) among the figure is carried out ise, obtain the figure of (d) in the accompanying drawing at last.
5, close the ion beam etching machine, take out chip, making finishes.
The method also can be used the making of alignment, array, the required micro ball lens of the various photodetectors of quadrant.
Claims (4)
1, a kind of method for making of photoelectric detector micro ball lens is characterized in that: micro ball lens is the substrate surface at photodetector tube core photosurface, and the method for employing ion beam etching is made.
2, the method for making of micro ball lens according to claim 1 is characterized in that: ion beam is to adopt Ar
+Ion beam.
3, the method for making of micro ball lens according to claim 1 is characterized in that: the mask of ion beam etching is with the spherical shape of one-tenth after the cylindrical photoresist process melting of photoetching process making.
4, the method for making of micro ball lens according to claim 1 is characterized in that: the condition of ion beam etching is substrate vacuum degree 5.5 * 10
-3Pa, Ar
+Ionogenic energy 500～600eV, line are 50～60mA, and beam diameter is φ 15cm, and the incident angle of ion beam is 75 °, and substrate is with the rotating speed rotation of 5～10 commentaries on classics/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA021339295A CN1492245A (en) | 2002-10-21 | 2002-10-21 | Method for producing long wave planar photoelectric detector micro ball lens |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA021339295A CN1492245A (en) | 2002-10-21 | 2002-10-21 | Method for producing long wave planar photoelectric detector micro ball lens |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1492245A true CN1492245A (en) | 2004-04-28 |
Family
ID=34231320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA021339295A Pending CN1492245A (en) | 2002-10-21 | 2002-10-21 | Method for producing long wave planar photoelectric detector micro ball lens |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1492245A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100417961C (en) * | 2004-10-27 | 2008-09-10 | 中国科学院光电技术研究所 | Microlens and optical fiber integration method based on focused ion beam technology |
| CN110221364A (en) * | 2019-04-03 | 2019-09-10 | 合肥嘉东光学股份有限公司 | A kind of silicon lens array design methodology |
| CN112909106A (en) * | 2021-01-13 | 2021-06-04 | 湖北光安伦芯片有限公司 | Manufacturing method of substrate back micro lens, photoelectric detector and manufacturing method of photoelectric detector |
-
2002
- 2002-10-21 CN CNA021339295A patent/CN1492245A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100417961C (en) * | 2004-10-27 | 2008-09-10 | 中国科学院光电技术研究所 | Microlens and optical fiber integration method based on focused ion beam technology |
| CN110221364A (en) * | 2019-04-03 | 2019-09-10 | 合肥嘉东光学股份有限公司 | A kind of silicon lens array design methodology |
| CN112909106A (en) * | 2021-01-13 | 2021-06-04 | 湖北光安伦芯片有限公司 | Manufacturing method of substrate back micro lens, photoelectric detector and manufacturing method of photoelectric detector |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |