CN1488146A - Non orthogonal MRAM device - Google Patents
Non orthogonal MRAM device Download PDFInfo
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- CN1488146A CN1488146A CNA028040759A CN02804075A CN1488146A CN 1488146 A CN1488146 A CN 1488146A CN A028040759 A CNA028040759 A CN A028040759A CN 02804075 A CN02804075 A CN 02804075A CN 1488146 A CN1488146 A CN 1488146A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
Abstract
An MRAM device (100) and method of manufacturing thereof having wordlines (112) that run non-orthogonal relative to bitlines (122), resulting in lower current and power consumption.
Description
Technical field
This case is the construction about general semiconductor subassembly, particularly, and a kind of magnetic RAM (magnetic random access memory, MRAM) assembly.
Background of invention
Semiconductor is used for integrated circuit to be applied in electronics, comprises, for example radio, phone, mobile phone and personal computer device etc.A kind of pattern of semiconductor device is the semiconductor storage device, and for example, a kind of dynamic randon access device (DRAM) and a kind of flash memory use a kind of electron charge to come store information.
Developing into that memory device is nearest involves spintronics (spin electronics), and it is in conjunction with semiconductor technology and magnetics.The rotation of an electronics, rather than electric charge, be used to the existence of indication " 1 " or " 0 ", a kind of this type of spinning electron device is a magnetic RAM (MRAM), comprise lead, system is arranged in the different metal layer perpendicular to other lead, and this lead is clipped in the middle a magnetic storehouse, and the place that lead intersects is called a point of crossing.Produce the magnetic field around lead and magnetic pole is oriented on the specific direction of wiring or lead via the electric current of one of them lead, can cause magnetic field and also can this magnetic pole of partial rotation via the electric current of other lead.Numerical information with " 1 " or " 0 " performance, is can be stored in the correction of magnetic distance, and the resistance that magnetic is formed is the correction according to moment.By reading in the assembly, a memory cell can be via lead and point of crossing are set in the matrix structure with row and row by construction via the opposing situation of test set composition for the data that stores.
With traditional semiconductor device, for example DRAM (Dynamic Random Access Memory) (DRAM) is compared, and the advantage of magnetic RAM (MRAMs) is non-according to electrical (non-volatile).For example, utilize a personal computer (PC) of magnetic RAM (MRAM) will not have the same long " activation " time with the conventional personal computer of utilizing DRAM (Dynamic Random Access Memory) (DRAM).Similarly, magnetic RAM (MRAM) does not need to be powered on (powered up) and has the ability that " remembeing " stores data.
Now, the advantage of magnetic RAM (MRAM) design is to need a large amount of electric currents to change cell element, and meaning must be high by the magnitude of current of bit line and character line promptly, therefore, needs to use a large amount of electric power.
It is needed in this technical field that to be the less electric current of a kind of needs and electric power with the conversion memory cell element have the resistance state or a design of the magnetic RAM of logic state (MRAM).
Summary of the invention
The technical advantages that this case is reached is that magnetic RAM (MRAM) device of on-right angle needs less electric current and electric power to come the logic state of memory cell is charged than the magnetic RAM of commonly using (MRAMs).Bit line and character line form on-right angle each other, and that is exactly, the angle except 90 degree, preferable scope be from less times greater than 0 to spending less than 90.
The disclosed a kind of semiconductor memory devices of this case comprises at least one first lead, at least one memory storage cell element, is to be arranged on this first lead, and at least one second lead, is to be arranged on this first lead.This second lead becomes on-right angle with this first lead and is set up, and this memory storage cell element has the material behavior based on a star-like curve (asteroid-shapedcurve).
This case also discloses a kind of magnetic RAM (MRAM) device, comprise a plurality of first leads, be positioned at second lead on this first lead and its and be set up the angle that becomes with this first lead except 90 degree, and a plurality of memory storage cell elements, it is provided with is to be adjacent to first and second lead and to be positioned between the two.
This case discloses the method for the program of a kind of design magnetic RAM (MRAM) device in addition, comprise via first lead and send one first electric current, wherein this first electric current produces one first electromagnetic field around this first lead, and send one second electric current via second electric current, wherein this second electric current produces one second electromagnetic field around this second lead, and wherein this second electric field system is different from this first electric field.
The advantage of this case comprises to be reduced in changes the needed magnitude of current of electric charge that is stored in memory cell in a character line and/or the bit line, and reduces the electric power that electric current can be saved memory device.Because the infringement of electron transfer memory device that phenomenon causes and the life-span of minimizing, also can be via alleviating in the use of character line and bit line reduced-current.
The icon simple declaration
The above-described feature of this case can and fully be understood with reference to the feature of icon by following embodiment explanation.
First figure: show the skeleton view of magnetic RAM (MRAM) device of commonly using, it has the character line perpendicular to bit line;
Second figure and the 3rd figure: show the vertical view of magnetic RAM (MRAM) device of commonly using, it has the character line perpendicular to bit line;
The 4th figure: show that expression uses the star-like curve of hysteresis characteristic of commonly using the magnetic material of magnetic RAM (MRAM) device one;
The 5th figure A and the 5th figure B: the vertical view that shows the layout (layouts) of this case preferred embodiment;
The 6th figure A and the 6th figure B: show to have the vertical view that different directions ratio (aspect ratio) and character line and bit line form the angle of on-right angle in this case preferred embodiment;
The 7th figure: show star-like curve according to this case;
The 8th figure: the skeleton view that shows an embodiment of present magnetic RAM (MRAM) device;
The 9th figure: the transverse cross-sectional view that shows an embodiment of present magnetic RAM (MRAM) device; And
The tenth figure: show magnetic RAM (MRAM) device that is arranged on two or more the magnetic storehouses between the on-right angle lead according to having of this case.
In different icons, corresponding numeral and symbol system join with corresponding part correlation, unless represent with other mode, the icon of being drawn is to be used for clearly illustrating viewpoint that this case preferred embodiment is relevant and also nonessentially to draw in proportion.
The preferred embodiment explanation
Below will design via the right angle random access memory (MRAM) that the advantage discussion of some preferred embodiments and some this cases is commonly used.
First figure is the skeleton view that shows a magnetic RAM of commonly using (MRAM) device 10, and it has and is set up and bit line 22 rectangular character lines 12, and meaning is a character line 12 with the angle of bit line 22 to be vertical or to equal 90 and spend.A magnetic storehouse 14 is set at contiguous character line 12 and bit line 22 and between, and magnetic storehouse 14 comprises, and for example, a soft formation 16, a tunnel layer or tunnel connect a face 18 and a hard formation 20.As mentioned above, pass through the electric current of character line 12 and bit line 22 via transmission, a logic state is can be stored in the correction of the magnetic distance in the magnetic storehouse.
Second figure is the vertical view that shows magnetic RAM (MRAM) device commonly use, and wherein the character linear system perpendicular to bit line 22, and shows that having a direction ratio is that a tunnel of 1: 1 connects face (TJ) 18 with the angles 24 of one 90 degree.The 3rd figure shows another magnetic RAM of commonly using (MRAM) device, and wherein character line is perpendicular to bit line 22, and to have a direction ratio be that a tunnel of 2: 1 connects face (TJ) 18.
The 4th figure is the method that shows that one of the hysteresis characteristic represent magnetic storehouse 14 memory cell materials star-like curve 30 and display addressing one magnetic RAM (MRAM) memory device are commonly used.H
xThe electromagnetic field that the axle representative is produced by a bit line 22, it is to produce by making an electric current flow through bit line 22, the generation system of this electromagnetic field meets " right-hand law " of electromagnetism.Same, H
yThe electromagnetic field that the axle representative is produced by a character line 12, it is to produce by making an electric current flow through character line 12.Along H
yVector 32 representative of axle is by an electromagnetic field that is just being produced with negative current, its bit line 22 of flowing through respectively with " 0 " or " 1 " that writes a logic to a memory cell (magnetic storehouse 14).By commonly use starlike 30 shown in, it is positive representing that the character line electric current is kept by vector 32, and usually as an electric current that activates.
For the state that opposing is arranged of conversion memory cell element or the state of logic, stacked (superposition) via the vector 34 and the vector 36 of vectorial 32 addition gained are represented by two electric fields that character line and bit line current produced must reach a bit on star-like curve 30 in the 1st quadrant.For example, for " 0 " that writes a logic to a magnetic storehouse 14, electric current produces by the represented electromagnetic fields of vector 34, is to turn round via bit line 22, and an electric current produces by vectorial 32 represented electromagnetic fields, is to turn round via character line 12.Mix vector 36 fully reaches star-like curve 30, and the minimum electromagnetic field (with the electric current that is associated) of these vector 36 expressions must be provided on character line 12 and the bit line 22 with conversion cell element 14.Similarly, for " 1 " that writes a logic to a memory cell 14, an electric current produces along H
xThe electromagnetic field that the vector 38 of axle is represented is to turn round via bit line 22, and electric current produces by along H
yThe electromagnetic field that the vector 32 of axle is represented is to turn round via character line 12, and produces a mix vector 40 that it reaches at second quadrant
In star-like curve 30.In the prior art, has the amplitude that equates with vectorial 34 represented electromagnetic fields by vector 32.
Shown in star-like curve 30, vector 34 is to be provided with in the mode that is perpendicular to one another with vector 32.Because the character line 12 of the magnetic RAM of commonly using (MRAM) device 10 turns round in the mode that is perpendicular to one another with bit line 22, so wait the represented electromagnetic field of vector to be tied to form the right angle thus.Make problem that character line 12 turns round perpendicular to the mode of bit line 22 be used for the conversion memory cell element the electric current that must provide usually high, for example 5 to 10 milliamperes, so magnetic RAM (MRAM) device 10 needs a large amount of electric power.Moreover because character line 12 and bit line 22 very little usually, for example, 0.1 μ m is wide, and the electron transfer phenomenon is a problem.Can flow through certainly their high current transfer of character line 12 and the metallization material of bit line 22, it can cause in the accumulation of the metal of ad-hoc location and be created in the short circuit of character line 12 and bit line 22 or interrupt.
This case has solved the problem that needs high electric current and electric power in the known techniques field for the logic state of conversion memory cell element 14, the 5th figure A shows an embodiment of the layout of this case, character line 112 is to be provided with in the mode with 122 one-tenth on-right angles of bit line, shows it with vertical view.Preferably, angle 124 is angles except 90 degree, for example, and at about 0 degree and between approximately less than 90 degree, for example, the angle of about 60 degree as shown in the figure.Shown angle 124 is the angle between the center line 128 of the center line 126 of a character line 112 and a bit line 122, and as an example, the scope of angle 124 can from 10 to 80 degree.
In the shown example of the 5th figure A, the tunnel of magnetic storehouse 114 connects face 118, and preferable to have a direction ratio be between 1: 2 and 1: 3.As shown, these magnetic storehouse 114 its shapes are preferably a rectangle.Moreover, the character line 112 that shown example has is also had no way of character line interlocking to character line, for example, to connect the left hand edge 166 of face 118 not overlapping or staggered with a contiguous tunnel for the right hand edge 162 that tunnel in intermediate character line 112 connects face 118, and wherein to connect face 118 be to be positioned at than hanging down among the character line 112 in the tunnel of this vicinity.
The 5th figure B shows another embodiment of a magnetic RAM (MRAM) device 200, and its character line that has 212 is to be provided with for 222 one-tenth with bit line non-perpendicularly, as presenting with the angle 224 less than 90 degree.In this example, shown tunnel connects face 218 and has a trapeziform shape.Yet it is that tunnel preferable among this case embodiment connects the face shape that the shown rectangle tunnel of the 5th figure A connects face.
The 6th figure A and the 6th figure B show another embodiment of this case, and it has the angle 324 and angle 424 of different direction ratios and on-right angle, and size and direction ratio regular meeting that the tunnel connects face 318/418 influence angle 324 and angle 424.The 6th figure A shows that direction ratio that the tunnel connects face 318 is an embodiment of 1: 2, and this causes the angle 324 of an on-right angle that reduces, and also causes the tunnel to connect the staggered of face 318 simultaneously.It is to be used to point out that this tunnel connects the tunnel that face 318 just is being transferred in the imminent character line and connects face 318 in this that the tunnel connects the face term that " interlocks ", this tunnel connects the staggered of face 318 and can connect the right hand edge 364 of face 318 and the tunnel that impinges upon in the character line of bottom is connect the left hand edge 366 of face 318 and it can be described via observing tunnel in the character line 112 of centre, and the right hand edge 364 that this centre tunnel connects face is that the left hand edge 366 that connects face 318 with centre tunnel is overlapped.
The 6th figure B system shows according to one of this case magnetic RAM (MRAM) device 400, wherein to connect the direction ratio of face 418 be 1: 2 in the tunnel, this causes one even lower, for example littler than the angle in the 6th figure 324, the angle 424 of on-right angle also causes the tunnel to connect the row even more the interlocking of face 418 simultaneously.The tunnel connects the staggered of face 418 or the centre tunnel of the overlap right hand edge 462 that can connect face 418 by the tunnel of checking intermediate character line 412 and lower character line 412 connects left hand edge 466 contrasts of face 418 and observed.
The 7th figure show a star-like curve 130 with by the vector that electric current produced of on-right angle character line 112/212/312/412 of flowing through with bit line 122/222/322/422, and illustrate memory device preferred methods of addressing according to this case.For " 1 " to the on-right angle magnetic RAM (MRAM) according to this case that writes a logic installs 100, make the positive current character line 112 of flowing through, with vector 132 expressions, the one negative current bit line 122 of flowing through, with vector 142 expressions, and show that a mix vector 144 reaches the star-like curve at second quadrant.Referring again to the known star-like curve 30 shown in the 4th figure, be noted that, it is less to be used for changing the required magnitude of current in " 1 " of on-right angle magnetic RAM (MRAM) cell element 100 to one logics, for example 9 milliamperes in the 7th figure are with respect to 11 milliamperes among the 4th figure, this can be by comparing with known vector 28, and bit line vector 143 has less numerical value and can be observed.
Referring again to the 7th figure, similarly, it is less to be used for changing the required magnitude of current in " 0 " of memory cell to a logic of an on-right angle magnetic RAM (MRAM) 100, one negative current, with vector 148 expressions, the character line 112 of flowing through, and a positive current, with vector 146 expressions, the bit line 122 of flowing through.As shown, four-quadrant mix vector 150 reaches star-like curve 130.Compare the vector 146 of the 7th figure and the vector 32 of the 4th figure once more, clearly, " 0 " required magnitude of current on bit line 122 of conversion on-right angle magnetic RAM (MRAM) 100 to one logics is less.When using less current, when the logic state of memory cell 118 was charged, the electric power that memory device 100 is consumed was less.
In the star-like curve of the 7th figure, also show the ability of using bit line and character line electric current, and electric current can produce different electromagnetic fields in order to design a memory cell, for example, the electromagnetic field difference of representing with vector 142 gives the electromagnetic fields that vector 132 is represented, is little as vector 142 than vectorial 132.
Attention is in the 7th figure, and the logic state that the negative character line electric current 148 of needs one changes memory cell becomes " 0 ".This is not difficult, because in the magnetic RAM of commonly using (MRAM) device 10, because of constantly making the electric current lead of flowing through, copper and the possible accumulation of other conducting metal in lead, periodically, make the character line electric current be reversed to alleviate the influence of electron transfer phenomenon.For example, in the prior art, the character line electric current can per second the mode that writes of conversion or per second and being reversed.
The 8th figure shows the skeleton view according to on-right angle magnetic RAM (MRAM) device 100 of this case, and the 9th figure shows the transverse cross-sectional view of present magnetic RAM (MRAM) device 100.
Next the method flow of making on-right angle magnetic RAM (MRAM) device 100/200/300/400 according to this case will be described, be with reference to the 9th figure.
One service part 111 is provided, is included in the monox on the monocrystalline silicon typically, do not show that this service part also can comprise other conductive layer or other semiconductor subassembly, for example, transistor, diode, through hole etc.For example, compound semiconductor such as gallium arsenide, indium phosphide, silicon/germanium and silit can be used to replace silicon.
One dielectric layer 111 is deposited on the service part, and this dielectric layer 111 can comprise monox and also can comprise an advanced low-k materials or other dielectric material.The example of the dielectric that other is fit to for example comprises, silk
TM, add the silex glass and the Fox of flouridate
TMAnd dielectric layer 113 can comprise, and for example, the layer of several dielectric materials does not show.
Ground one lead 112 is formed on the service part and within dielectric layer 113, first lead 112 is preferably and comprises copper, aluminium, its compound or other metal, first lead 112 can be formed in one second metal layer (M2), for example, however first lead 112 can be formed in other the metal layer.
Technical advantages that this case is reached is an on-right angle magnetic RAM (MRAM) device 100/200/300/400, it is required, and flow through character line 112/212/312/412 and/or bit line 122/222/322/422 is less with the electric current of the logic state of conversion memory cell element 114/214/314/414, therefore, be written to the required electric power of magnetic RAM (MRAM) device also thereby less and can reduce the electron transfer phenomenon of character line and bit line.So the magnetic RAM (MRAMs) that this case provides a kind of ratio to commonly use is more sturdy and durable and have magnetic RAM (MRAM) device of longer life.
This case is described in a magnetic RAM (MRAM) device use-pattern at first in this, yet, first and second lead of on-right angle, having when using, also be helpful based on a magnetic hysteresis loop (hysteresis loop) or the memory storage cell element of the material behavior of star-like curve with any.A plurality of magnetic storehouses 514 comprise the tunnel and meet face TJ2 (518), its can be deposited on the bit line 22 and bit line 22 and can comprise the character line 512 of on-right angle and/or the additional metals layer (M3) of bit line between, as according to shown in the 10th figure of this case.
This case illustrates with illustrative embodiment; right this explanation is not a kenel of planning to be configured in a restriction; this case must be thought and is to modify as all by the people Ren Shi craftsman who is familiar with this skill; moreover; program step order in this case can be rearranged by the people who is familiar with this skill; but still within the scope of this case, thereby any modification or embodiment is neither takes off as Protector that attached application range is desired.In addition, the protection domain of this case is not limited at the specific embodiment of the program described in the instructions, machine, manufacturing, material composition, instrument, method and step etc.Similarly, appended claim plans to comprise the scope of these program, machine, manufacturing, material composition, instrument, method and step.
Claims (29)
1. semiconductor memory devices is to comprise:
At least one first lead;
At least one first memory storage cell element is to be arranged on this first lead, and this first memory storage cell element has the material behavior according to a star-like curve; And
At least one second lead is to be arranged on this first memory storage cell element, and wherein this second lead system becomes the mode of on-right angle with this first lead and is provided with.
2. as cryopreservation device within as described in the 1st of the claim, wherein the angle between this first lead and this second lead is between 10 to 80 degree.
3. as cryopreservation device within as described in the 2nd of the claim, wherein this memory device is a magnetic RAM (MRAM), and wherein the first memory storage cell element comprises a magnetic storehouse, and this magnetic storehouse comprises a channel and connects face.
4. as cryopreservation device within as described in the 3rd of the claim, wherein this channel connects mask has an aspect ratio to tie up between about 1: 1 and about 1: 3.
5. as cryopreservation device within as described in the 3rd of the claim, wherein this first lead comprises character line and this second lead comprises bit line.
6. as cryopreservation device within as described in the 5th of the claim, wherein being stored in the logic state that this channel connects in the face can be switched with an electric current that changes this bit line of flowing through via a flow through electric current of this character line of change.
7. as cryopreservation device within as described in the 3rd of the claim, wherein this channel connects bread and contains a rectangular shape.
8. as cryopreservation device within as described in the 3rd of the claim, wherein this channel connects the shape that bread contains a trapezium.
9. further comprise as cryopreservation device within as described in the 3rd of the claim:
At least one second memory storage cell element is to be arranged on this second lead; And
At least one privates is to be arranged on this memory storage cell element, and wherein this privates system becomes the mode of on-right angle with this second lead and is provided with.
10. as cryopreservation device within as described in the 9th of the claim, wherein the first memory storage cell element comprises a magnetic storehouse, and this magnetic storehouse comprises a channel and connects face.
11. a magnetic RAM (MRAM) device is to comprise:
Plural number first lead;
Plural number second lead is to be arranged on this first lead, and this second lead and this first lead are tied to form the angle except 90 degree; And
The plural number first memory storage cell element is to be arranged between this first lead and this second lead and in abutting connection with this first lead and this second lead.
12. as magnetic RAM (MRAM) device as described in the 11st of the claim, wherein this first memory storage cell element has the material behavior according to a star-like curve.
13. as magnetic RAM (MRAM) device as described in the 12nd of the claim, wherein this first memory storage cell element comprises one first magnetic storehouse, this first magnetic storehouse comprises a channel and connects face.
14. as magnetic RAM (MRAM) device as described in the 13rd of the claim, wherein this channel connects mask has an aspect ratio to tie up between about 1: 1 and about 1: 3.
15. as magnetic RAM (MRAM) device as described in the 13rd of the claim, wherein this channel connects bread and contains a rectangular shape.
16. as magnetic RAM (MRAM) device as described in the 13rd of the claim, wherein this channel connects the shape that bread contains a trapezium.
17. further comprise as cryopreservation device within as described in the 13rd of the claim:
The plural number second memory storage cell element is to be arranged on this second lead; And
The plural number privates is to be arranged on this second memory storage cell element, and wherein this privates system becomes the mode of on-right angle with this second lead and is provided with.
18. as magnetic RAM (MRAM) device as described in the 17th of the claim, wherein the second memory storage cell element comprises one second magnetic storehouse, this second magnetic storehouse comprises a channel and connects face.
19. as magnetic RAM (MRAM) device as described in the 13rd of the claim, wherein this first lead comprises character line and this second lead comprises bit line.
20. as magnetic RAM (MRAM) device as described in the 13rd of the claim, wherein being stored in the logic state that this channel connects in the face can be switched with an electric current that changes this bit line of flowing through via a flow through electric current of this character line of change.
21. a method of making the semiconductor memory device is to comprise:
(1) forms at least one first lead;
(2) form at least one memory storage cell element that is arranged on this first lead, wherein this memory cell cording has the material behavior according to a star-like curve; And
(3) form at least one on this memory storage cell element second lead and become the setting of on-right angle with this first lead.
22. as the method as described in the 21st of the claim, wherein this memory device comprises a magnetic RAM (MRAM), wherein forms one and stores cell element and comprise to form and have the magnetic storehouse that channel connects face.
23. as the method as described in the 21st of the claim, wherein this channel connects mask has an aspect ratio to tie up between about 1: 1 and about 1: 3.
24. as the method as described in the 21st of the claim, wherein to connect face be rectangle to this channel.
25. as the method as described in the 21st of the claim, wherein to connect face be trapezium to this channel.
26. as the method as described in the 21st of the claim, wherein this first lead comprises character line and this second lead comprises bit line.
27. the method for design one magnetic RAM (MRAM) device, this magnetic RAM (MRAM) comprise plural first lead, plural number be arranged at second lead on this first lead and plural number be arranged at this first and this second lead between and be positioned at the memory storage cell element that it connects face, this method comprises:
(1) send one first electric current of this first lead of flowing through, wherein this first electric current produces one first electromagnetic field around this first lead; And
(2) send one second electric current of this second lead of flowing through, wherein this second electric current produces one second electromagnetic field around this second lead,
Wherein this second electromagnetic field system is different from this first electromagnetic field.
28. as the method as described in the 27th of the claim, wherein this memory storage cell element has the material behavior according to a star-like curve.
29. as the method as described in the 27th of the claim, wherein this second lead becomes the setting of on-right angle with this first lead.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26396601P | 2001-01-24 | 2001-01-24 | |
| US60/263,966 | 2001-01-24 | ||
| US09/818,010 | 2001-03-27 | ||
| US09/818,010 US6522579B2 (en) | 2001-01-24 | 2001-03-27 | Non-orthogonal MRAM device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1488146A true CN1488146A (en) | 2004-04-07 |
| CN100407333C CN100407333C (en) | 2008-07-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN028040759A Expired - Fee Related CN100407333C (en) | 2001-01-24 | 2002-01-24 | Non orthogonal MRAM device |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6522579B2 (en) |
| EP (1) | EP1354322B1 (en) |
| JP (1) | JP2004522318A (en) |
| KR (1) | KR100565108B1 (en) |
| CN (1) | CN100407333C (en) |
| DE (1) | DE60226005T2 (en) |
| TW (1) | TW574685B (en) |
| WO (1) | WO2003010772A1 (en) |
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| US6807086B2 (en) * | 2001-11-30 | 2004-10-19 | Kabushiki Kaisha Toshiba | Magnetic random access memory |
| US6891193B1 (en) * | 2002-06-28 | 2005-05-10 | Silicon Magnetic Systems | MRAM field-inducing layer configuration |
| US7084413B2 (en) * | 2002-08-08 | 2006-08-01 | Micron Technology, Inc. | Photolithographic techniques for producing angled lines |
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| JPH05183212A (en) | 1991-07-30 | 1993-07-23 | Toshiba Corp | Magneto-resistance effect element |
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| JP3137185B2 (en) * | 1998-04-09 | 2001-02-19 | 日本電気株式会社 | Semiconductor storage device |
| US6005800A (en) * | 1998-11-23 | 1999-12-21 | International Business Machines Corporation | Magnetic memory array with paired asymmetric memory cells for improved write margin |
| US6178131B1 (en) * | 1999-01-11 | 2001-01-23 | Ball Semiconductor, Inc. | Magnetic random access memory |
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2001
- 2001-03-27 US US09/818,010 patent/US6522579B2/en not_active Expired - Lifetime
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- 2002-01-24 EP EP02790226A patent/EP1354322B1/en not_active Expired - Lifetime
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- 2002-01-24 WO PCT/US2002/003043 patent/WO2003010772A1/en active IP Right Grant
- 2002-01-24 DE DE60226005T patent/DE60226005T2/en not_active Expired - Lifetime
- 2002-01-24 JP JP2003516060A patent/JP2004522318A/en active Pending
- 2002-01-24 TW TW091101147A patent/TW574685B/en not_active IP Right Cessation
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| CN100407333C (en) | 2008-07-30 |
| WO2003010772A1 (en) | 2003-02-06 |
| KR20040073278A (en) | 2004-08-19 |
| KR100565108B1 (en) | 2006-03-30 |
| TW574685B (en) | 2004-02-01 |
| US20020097601A1 (en) | 2002-07-25 |
| DE60226005T2 (en) | 2009-07-02 |
| EP1354322B1 (en) | 2008-04-09 |
| US6522579B2 (en) | 2003-02-18 |
| JP2004522318A (en) | 2004-07-22 |
| EP1354322A1 (en) | 2003-10-22 |
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