CN1484079A - Active addressing LCD and mfg method thereof - Google Patents
Active addressing LCD and mfg method thereof Download PDFInfo
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Abstract
The invention provides an active matrix addressing LCD device which can effectively prohibit leakage current caused by electrification of interlayer material placed over TFT. The device includes: (a) the first base plate with switch components; (b) the second base plate coupled with the first one to develop a gap between them; the interlayer material scattered in the gap; (c) liquid crystal limited in the gap; and (d) bulges developed in area overlapped with the switch component; each bulge protruding in the direction to make the gap turn narrow. The interlayer material is easy to move away from the overlapped area due to the bulges.
Description
Background of invention
Invention field
The present invention relates in general to a kind of active-matrix liquid crystal display device (LCD).Relate in particular to a kind of active-addressed LCD device and manufacture method thereof that can reduce to be formed on the leakage current of the thin film transistor (TFT) on the device.
Description of related art
In recent years, developed variously with the LCD device of TFT as on-off element, wherein a kind of is exactly active array addressing LCD device.Common active array addressing LCD device comprises an active-matrix substrate that comprises TFT, pixel electrode, gate line, drain line etc.; A counter substrate that comprises color filter, black substrate etc.; With the liquid crystal layer that is clipped by two substrates.During work, stride the electrode that is arranged on active-matrix substrate and the counter substrate and apply suitable voltage.Perhaps, stride the one group of electrode that is arranged on the active-matrix substrate and be arranged on another group electrode application voltage on the same substrate.The orientation of control (promptly change or rotation) liquid crystal molecule to be changing the transmittance amount in each pixel thus, thereby shows required image on the display screen of device.
About TFT, known have a staggered and reverse interleaved type.Staggered TFT comprises a semiconductor island that is formed on the active-matrix substrate, a grid and the source electrode and the drain electrode that are formed under this island that is formed on the semiconductor island.On the other hand, reverse interleaved type TFT comprises the semiconductor island that is formed on the active-matrix substrate, is formed on grid and the source electrode and the drain electrode that are formed on the island under the semiconductor island.Used reverse interleaved type TFT traditionally widely.
The typical structure of existing active array addressing LCD device as shown in Figure 1.Need not give unnecessary details, this device comprises many reverse interleaved type TFT, sept and pixel.But, for simplicity, in Fig. 1, only show a TFT, a sept and a pixel, below main this structure of explanation.
About existing active array addressing LCD device shown in Figure 1, active-matrix substrate S101 comprises glass sheet 101, grid 102a, gate dielectric 103, amorphous silicon (being called for short " a-Si ") island 104a, n+ type a-Si layer 104b, drain electrode 10a and source electrode 105b.Grid 102a, gate dielectric 103, a-Si island 104a, n+ type a-Si layer 104b, drain electrode 10a and source electrode 105b constitute each TFT 104.
Active-matrix substrate S101 comprises that also formation is to cover the interlayer dielectric layer 107 of TFT 104.The layer 107 surperficial flattened.Optionally remove layer 107 exposes source electrode 105b with formation contact hole 107a.By the system transparent conducting film figure, the pixel electrode 108 that forms as tin indium oxide (ITO) film pattern is formed on the layer 107.Electrode 108 contacts with source electrode 106 by the hole 107a in the contact region 106.
Oriented layer 109a is formed on the pixel electrode 108 that exposes with covering on the interlayer dielectric layer 107.Layer 109a is used for along specific direction the liquid crystal molecule that liquid crystal layer exists being carried out orientation.
Counter substrate S102 comprises glass sheet 111, color filter 112a, black substrate 112b, external coating 113, transparent public electrode 114 and an oriented layer 109b.Color filter 112a and black substrate 112b are formed on the surface of glass sheet 111.The external coating 113 that forms is entirely to cover color filter 112a and black substrate 112b.Public electrode 114 is formed on the layer 113.Oriented layer 109b is formed on the electrode 114.Layer 109b is used in specific direction the liquid crystal molecule that is present in liquid crystal layer being carried out orientation.
Active-matrix substrate S101 and counter substrate S102 are coupled to each other with a kind of seal element (not shown), and its coupling mode is to form gap 130 by spherical rigid spacer 110 between substrate S101 and S102.A kind of specific liquid crystal is filled in the gap 130, forms liquid crystal layer thus.
For aforesaid existing LCD device shown in Figure 1, spherical spacer 110 is dispersed in randomly in the gap between substrate S101 and the S102 guaranteeing and homogenizes.Usually, the inside surface of active-matrix substrate S101 is by utilizing interlayer dielectric layer 107 complanations, and the inside surface of counter substrate S102 is by utilizing external coating 113 complanations.Therefore, when coupling substrate S101 and S102, the position of sept 110 can not be adjusted or regulate.Therefore, if sept 110 is positioned at the upper right side of TFT 104, then sept 110 causes the leakage current of the TFT 104 back channel regions of flowing through thus probably by charged.Leakage current will cause the fault of TFT 104, cause defective display operation.
In order effectively to suppress the leakage current of sept 110 charged initiations, set up a kind of sept 110 from the improvement that the upper-right position of TFT 104 is shifted, announced this scheme in 1988 among the disclosed Japanese laid-open patent application JP63-221322.
Fig. 2 A and 2B have showed a kind of manufacture method of existing active array addressing LCD device respectively, have realized the improvement to the technical scheme of JP63-221322 announcement.
Shown in Fig. 2 A, grid 202a is formed on the surface of glass sheet 201, and electrode 202a has the double-layer structure of chromium (Cr) layer and molybdenum (Mo) layer.Gate dielectric 203 is formed on the surface of glass sheet 201 with coated electrode 202a.It is overlapping fully with grid 202a that a-Si island 204a is formed on gate dielectric 203.N+ type a-Si layer 204b optionally is formed on the 204a of island.Drain electrode 205a and source electrode 205b are formed on each side of the island 204a on layer 204b at each interval.Drain electrode 205a only contacts with layer 203 in its end with source electrode 205b.Each has chromium (Cr) layer and aluminium (Al) layer double-layer structure drain electrode 205a and source electrode 205b.Grid 202a, gate dielectric 203, a-Si island 204a, a-Si layer 204b, drain electrode 205a and source electrode 205b constitute a TFT 204.Form a channel region among the island 204a between drain electrode 204a and source electrode 204b.
Afterwards, form an interlayer dielectric layer 207 to cover TFT 204.Not to the surface planarization of layer 207.Optionally form one and be used to the photoresist layer 221 that stops extraneous light to enter channel region on layer 207, its generation type is fully overlapping with the channel region of TFT 204.Layer 221 is generally made by Cr.
Subsequently, on interlayer dielectric layer 207, form a photosensitive oriented layer 209a, and on layer 209a, scatter spherical spacers 210 simultaneously.Utilize one to be positioned at the top-right photomasks 220 that have a clear area 220a of TFT 204 and layer 209a is exposed under the specific exposure light develops then, shown in Fig. 2 A.Optionally remove the layer 209a of position directly over the TFT 204 then.In this step, partly remove the sept 210 that is present on the TFT 204 along the removal of layer 209a.As a result, make active-matrix substrate S201 shown in Fig. 2 B.
About disclosed improvement project among the JP63-221322, shown in Fig. 2 A and 2B, photosensitive oriented layer 209a is formed on the interlayer dielectric layer 207, and simultaneously, scatters sept 210 on layer 209a.Afterwards, optionally expose and the layer 209a that develop, optionally remove the layer 209a and the sept 210 at TFT 204 upper-right position places thus.As a result, suppressed effectively because the leakage current of sept 110 charged initiations remains on a required value with the gap between active-matrix substrate S201 and the counter substrate (not shown) simultaneously.
But about disclosed improvement project among the JP63-221322, oriented layer 209a is partly removed, and therefore, has drawn such problem, promptly the liquid crystal molecule orientation of relevant position can not be as required control.Cover these directed uncontrollable positions if additionally increase a photoresist layer, then can cause another problem, promptly reduce the aperture ratio.
Disclosed Japan patented claim JP2000-258800 undetermined had announced a kind of method of controlling the position of spherical spacer in 2000, the leakage current after this scheme is not disinthibited in the channel part.
Below with reference to Fig. 3 this method is described.
As shown in Figure 3, active-matrix substrate S301 comprises that a glass sheet 201 and one are formed on glass sheet 301 lip-deep grid 302a.Gate dielectric 303 is formed on the surface of glass sheet 301 with coated electrode 302a.A-Si island 304a is formed on the gate dielectric 303 with fully overlapping with grid 302a.Drain electrode 305a and source electrode 305b are formed on each side of island 304a on the layer 303 apart from each other.The inner end of drain electrode 305a contacts with island 304a.Grid 302a, gate dielectric 303, a-Si island 304a, drain electrode 305a and source electrode 305b constitute a TFT304.Channel region be formed on the drain electrode and source electrode 304a and 304b between island 304a in.
The interlayer dielectric layer 307 that forms is to cover TFT 304.Not to the surface planarization of layer 307.Near each TFT 304 on the layer 307, form a projection 322.Projection 322 has the square-section.
Counter substrate S302 has the structure identical with the counter substrate S101 shown in Fig. 1.Specifically, substrate S302 comprises glass sheet 311, color filter 312a, black substrate 312b, external coating 313, transparent public electrode 314 and oriented layer 309b.
Between substrate S301 that couples and S302, form a gap 330.In gap 330, scatter spherical spacer 310.
About the prior art LCD device shown in Fig. 3, increase the projection 322 that is provided with near each TFT304, and therefore avoided because vibration and vibration cause sept 310 to enter transmitance region.Thereby, suppressed the leakage of extraneous light, improved display quality.But, this method can not avoid sept 310 be placed on TFT 304 directly over.And the sept 310 that is placed on directly over the TFT 314 is difficult to break away from TFT 314.
Summary of the invention
Therefore, fundamental purpose of the present invention is to provide a kind of active array addressing LCD device and manufacture method thereof that can effectively suppress to be placed on the leakage current of the charged initiation of sept directly over the TFT.
Another object of the present invention is to provide a kind of and can effectively suppress active array addressing LC device and the manufacture method thereof that pixel electrode place voltage is kept defective.
Another object of the present invention is to provide a kind of and has avoided sept because vibration and vibration and the active array addressing LCD device and the manufacture method thereof that move to on-off element.
By following explanation, the present invention's purpose above-mentioned and that do not mention especially will become clearer for those skilled in the art.
According to a first aspect of the invention, provide a kind of active array addressing LCD device, this device comprises:
(a) has first substrate of on-off element;
(b) second substrate that couples with first substrate, coupling mode are to form the gap that has sept between first and second substrates;
Sept is dispersed in the gap;
(c) be limited to liquid crystal in the gap; With
(d) be formed on the on-off element overlapping areas in projection;
Each projection is protruded along the direction of gap turn narrow.
According to the active array addressing LCD device of first aspect present invention, convex to form and be in the on-off element overlapping areas that each projection is protruded along the direction of gap turn narrow.
Therefore, be coupled to each other when forming the gap or afterwards, the sept that is distributed in the gap moves apart the overlay region when first and second substrates.This means sept displacement directly over the element automatically.As a result, the charged effect of sept alleviates, and has suppressed leakage current thus effectively.This voltage that causes effectively suppressing the pixel electrode place is kept defective.
And because projection, even have vibration and vibration to be applied on the device, the sept of also having avoided being distributed in the gap moves to on-off element.
In the preferred embodiment according to the device of first aspect present invention, projection comprises that formation is to cover the interlayer dielectric layer of on-off element.
In another preferred embodiment according to the device of first aspect present invention, projection comprises the external coating that is formed on second substrate.
In another preferred embodiment according to the device of first aspect present invention, the part projection comprises and being formed on first substrate covering the interlayer dielectric layer of on-off element, and the remainder of projection comprises the external coating that is formed on second substrate.
Preferably each projection has than little about 1 μ m of sept diameter or more height.
Preferably each projection has the whole gradient that covers a corresponding on-off element.
Projection can form by photosensitive organic layer or the double-layer structure by inorganic dielectric layer and photosensitive organic layer.
Preferably on-off element is reverse interleaved type.
In another preferred embodiment according to the device of first aspect present invention, each projection comprises a depression with sept diversion counter element.
According to a second aspect of the invention, provide a kind of method of making active array addressing LCD device in the first aspect.This method comprises:
(a) provide first substrate and second substrate;
First substrate has on-off element;
Form projection in first and second substrates at least one;
(b) couple first and second substrates in the mode that forms the gap by sept each other;
Sept is distributed in the gap;
Liquid crystal is limited in the gap;
It is characterized in that projection is arranged in and the on-off element overlapping areas;
Each projection is along projection on the direction of gap turn narrow; And
When first and second substrates are coupled to each other or afterwards, sept moves away element along the gradient of projection.
About the method for second aspect present invention, the active array addressing LCD device of making according to first aspect is conspicuous.
In preferred embodiment, use a mask to form projection according to the method for second aspect.Mask comprises the Resistance of blocks exposure or the clear area that allows exposure light to pass.Resistance or clear area are formed on the position corresponding with projection.
In another preferred embodiment according to the method for second aspect, one at least the first and second substrates has photosensitive interlayer dielectric layer.On interlayer dielectric layer, form projection with gray mask.Gray mask comprise be formed on protruding correspondence position on stop/clear area, be formed on the transparent/Resistance on the contact hole correspondence position with interlayer dielectric layer and be formed on all the other locational translucent areas.
The accompanying drawing summary
For the ease of implementing the present invention, describe below with reference to the accompanying drawings.
Fig. 1 is the partial section of the structure of the existing active array addressing LCD device of expression;
Fig. 2 A and 2B are respectively the partial sections that the method for another existing active array addressing LCD device is made in expression;
Fig. 3 is the partial section of the structure of another existing active array addressing LCD device of expression;
Fig. 4 is the partial section along in Fig. 5 IX-IX line of expression according to the active array addressing LCD device architecture of first embodiment of the invention;
Fig. 5 is the partial plan layout of expression according to TFT, pixel, gate line and the drain line layout of the active array addressing LCD device of first embodiment among Fig. 4;
Fig. 6 A～6E is the sectional view along IV-IV line among Fig. 5, has wherein showed the method for making according to the device of first embodiment respectively;
Fig. 7 is the partial section along in Fig. 5 IX-IX line of expression according to the active array addressing LCD device architecture of second embodiment of the invention;
Fig. 8 is the partial section along in Fig. 5 IX-IX line of expression according to the active array addressing LCD device architecture of third embodiment of the invention;
Fig. 9 A～9F is the sectional view along IV-IV line among Fig. 5, has wherein showed the method for making according to the device of the 3rd embodiment respectively;
Figure 10 is the partial section along in Fig. 5 IX-IX line of expression according to the active array addressing LCD device architecture of fourth embodiment of the invention;
Figure 11 is the partial section along in Fig. 5 IX-IX line of expression according to the active array addressing LCD device architecture of fifth embodiment of the invention;
Figure 12 is the partial section along in Fig. 5 IX-IX line of expression according to the active array addressing LCD device architecture of sixth embodiment of the invention.
DETAILED DESCRIPTION OF THE PREFERRED
Below with reference to the accompanying drawings the preferred embodiments of the present invention are described in detail.
First embodiment
Fig. 4 and Fig. 5 represent the structure according to the active array addressing LCD device of first embodiment of the invention.Need not give unnecessary details, this device comprises the TFT of a plurality of reverse interleaved type channel-etch, sept and pixel.But, for for simplicity, in Fig. 4, only showing a TFT, a sept and a pixel mainly describe below at this point.
The active array addressing LCD device of first embodiment comprises an active-matrix substrate S1, a counter substrate S2 and a liquid crystal layer that is clipped between substrate S1 and the S2.Liquid crystal layer is clipped between substrate S1 and the S2.
Active-matrix substrate S1 comprises glass sheet 1, grid 2a, gate dielectric 3, a-Si island 4a, n+ type a-Si surface of contact 4b, drain electrode 5a and source electrode 5b.Grid 2a, gate dielectric 3, a-Si island 4a, n+ type a-Si surface of contact 4b and drain electrode 5a, source electrode 5b constitute the TFT 4 that is arranged in each pixel.The combination of island 4a and surface of contact 4b is called the TFT island.
Active-matrix substrate S1 also comprises an interlayer insulating film 7 that covers TFT 4.There is a protruding 16a layer 7 position directly over TFT 4, makes the gap turn narrow at this place thus.Optionally remove layer 7 exposes source electrode 5b with formation contact hole 7a.Be formed on the layer 7 by the pixel electrode 8 that the nesa coating composition such as the ITO film is formed.Electrode 8 contacts with source electrode 6 by the hole 7a in the contact region 6.
Oriented layer 9a is formed on the interlayer dielectric layer 7, the pixel electrode 8 that exposes with covering.Layer 9a be used for specific and on the direction alignment be present in the orientation of liquid crystal molecule in gap 30.
As shown in Figure 5, on substrate S1, (being the horizontal direction among Fig. 5) arranges gate line 2 equally spacedly in one direction, and (being the vertical direction among Fig. 5) arranges drain line 5 equally spacedly on a direction perpendicular to line 2.Every gate line 2 is attached to corresponding grid 2a.Every drain line 5 is attached to corresponding drain electrode 5a.The TFT 4 that serves as on-off element arranges near the point of crossing of lines 2 and 5.
Opposed substrate S2 comprises glass sheet 11, color filter 12a, black substrate 12b, external coating 13, transparent public electrode 14 and oriented layer 9b.Be formed on glass sheet 11 lip-deep color filter 12a and be used for color display on display screen.The black substrate 12b that also is formed on the glass sheet 11 is used to prevent that extraneous light from entering TFT 4 and gate line 2 and the drain line 5 that is positioned on the active-matrix substrate S1.The external coating 13 that forms covers color filter 12a and black substrate 12b fully.The public electrode of being made by ITO 14 is formed on the layer 13.Oriented layer 9b is formed on the electrode 14.Layer 9b is used on specific direction the orientation that alignment is present in the liquid crystal molecule in gap 30.
Active-matrix substrate S1 and counter substrate S2 are coupled to each other by the seal element (not shown), and coupling mode is to form required gap 30 by spherical rigid spacer 10 between substrate S1 and S1.Sept 10 is distributed in the gap 30 randomly.In gap 30, fill specific liquid crystal, form liquid crystal layer thus.
Next, make the method for above-mentioned LCD device among first embodiment with reference to figure 6A～6E explanation.
At first, as shown in Figure 6A, by the method formation TFT 4 of routine.Specifically, be the Cr layer of 200nm by sputtering method at the surface deposition thickness of glass sheet 1, then,, on glass sheet 11, form grid 2a and gate line 2 thus by current photoetching and etching technique composition.Afterwards, as gate dielectric 3, on glass sheet 1, form thickness by the chemical vapor deposition (CVD) method and be about the silicon nitride layer of 500nm with coated electrode 2a.Be about the a-Si layer of 300nm and n+ type a-Si layer that thickness is about 50nm by CVD method or other method deposit thickness successively,, form the TFT that comprises island 4a and surface of contact 4b thus then by current photoetching and etching technique composition.At the state in this stage as shown in Figure 6A.
Subsequently, shown in Fig. 6 b, be about the Cr layer of 150nm by sputtering method deposit thickness on gate dielectric 3.On the Cr layer, form a kind of resist pattern 15.Utilize the pattern 15 that forms thus, to Cr lines composition, form drain electrode 5a and source electrode 5b and drain line 5 thus by dry ecthing method.
By dry ecthing method optionally etching a-Si island 4a and n+ type a-Si surface of contact 4a, form the depression that exposes channel part thus.Do not remove pattern 15 ground and carry out the method that is known as " channel-etch ".This channel-etch method can be that 500sccm, air pressure are that 20Pa and RF (radio frequency) power are about under the condition of 600W and carry out at the etching gas flow velocity.The degree of depth of depression is set to from the about 100nm in the surface of surface of contact 4b.Remove resist pattern 15 in this stage.
Afterwards, on the whole surface of glass sheet 1, form interlayer dielectric layer 7 to cover TFT 4 by centrifugal coating process.In this embodiment, shown in Fig. 6 C, the thickness of locating directly over TFT 4 with layer 7 determines the condition (as viscosity, coated conditions and the conditions of exposure of material) of centrifugal coating process greater than the mode at all the other regional thickness.For example, the photosensitive acrylic resin that viscosity is about 5～15Pas is as source material, and again this resin-coating to the surface of gate dielectric 3 and TFT 4, simultaneously with the speed rotary glass sheet of 1000～2000rpm 10～20 seconds.Afterwards, with the photosensitive acrylic resin layer that forms thus about 1 hour at about 220 ℃ sintering temperature.As a result, this resin bed has the thickness of about 1.5～3.5 μ m at last.The photosensitive acrylic resin layer of Xing Chenging is as interlayer dielectric layer 7 thus.
Utilize gray mask 18 that photosensitive acrylic resin layer-selective ground is exposed under the GHI line as exposure light.Mask 18 has Resistance 17a, clear area 17c and translucent areas 17b, shown in Fig. 6 C.The Resistance 17a that is positioned at directly over each TFT 4 stops the GHI line.The translucent areas 17c that is positioned at directly over each contact hole 7a allows the GHI line to pass completely through.The translucent areas 17c of the remainder of overlayer 3 allows the GHI line to pass with the transmissivity less than 17c.As a result, when with suitable developer solution the layer that exposes being developed, the TFT district is not exposed, and therefore they are not changed.Because fully exposed in the zone of contact hole 7a, so that selective removal is the contact hole 7a that arrives each source electrode 5b.To remaining regional exposure, and therefore directly reduce this regional thickness with low exposure rate.
After this step, exposure and the photosensitive acrylic resin layer that develops are carried out thermal treatment under specified temp.Therefore, the final interlayer dielectric layer 7 that has protruding 16a that on TFT 4, forms.Each protruding 16a has a mild slope, shown in Fig. 6 C.
If interlayer dielectric layer 7 is too thick, then be difficult to form contact hole 7, perhaps the pixel electrode 8 that forms subsequently breaks or disconnecting probably.If interlayer dielectric layer 7 is too thin, then can not form desirable projection with mild slope.Therefore, in this case, need to regulate the thickness of photosensitive acrylic resin layer and the height of protruding 16a.The test of carrying out according to the present inventor, find when height H less than the about 1 μ m of the diameter of sept 10 or more for a long time, form and make sept 10 move apart the required protruding 16a of TFT 4.But also find that when if the slope of the protruding 16a that forms arrives the end of source electrode and drain electrode 5a and 5b, the charged influence of sept is suppressed to the level of a permission.
In the present embodiment, utilize gray mask 18 to form the contact hole 7 of protruding 17a and layer 7 by the single exposure process.But the present invention is not limited to this.May form by the double exposure process.For example, in the exposure process photosensitive acrylic resin layer beyond the TFT zone is exposed to the GHI line in the first time, and will be exposed to corresponding to the part of contact hole 7a under the GHI line in the exposure process in the second time again, reach the level that is enough to form hole 7a.
Subsequently, on interlayer dielectric layer 7, form semitransparent conductive layer (as the ITO layer) and the composition that thickness is about 40nm.Therefore, shown in Fig. 6 D, pixel electrode 8 forms in the mode at the contact region of correspondence 6 each source electrode of contact 5b.
On interlayer dielectric layer 7, form oriented layer 9a to cover pixel electrode 8.Layer 9a carried out specific directional process.
On the other hand, form counter substrate S2 in the following manner.Specifically, on glass sheet 11, form color filter 12a with corresponding to each pixel.Form black substrate 12b with corresponding to TFT 4 and gate line 2 and drain line 5.Form external coating 13 to cover color filter 12a and black substrate 12b.On layer 13, form transparent public electrode 14.Form oriented layer 9b with coated electrode 14 with cladding process.Then layer 9b carried out specific directional process.
With diameter is that the inorganic short grained sept 10 of 4～5 μ m is randomly dispersed on the inside surface of active-matrix substrate S1 or counter substrate S2.Then, in the mode that forms gap 30 substrate S1 and S2 are coupled to each other.Gap 30 is limited by the seal element (not shown).In this stage, spherical spacer 10 is randomly dispersed in the whole gap 30, and therefore some septs 10 can be placed on directly over the right side of TFT 4.But substrate S1 surface within it has protruding 16a.Therefore, sept 10 moves to the gap area (by the arrow logo among Fig. 6 E) of broad along the gradient of protruding 16a probably.In other words, sept 10 displacement directly over the TFT 4 naturally.
At last, liquid crystal is injected gap 30, then by known method seal clearance 30.Therefore, make active array addressing LCD device according to first embodiment shown in the Figure 4 and 5.
About the active array addressing LCD device according to first embodiment, as mentioned above, protruding 16a is formed on active-matrix substrate S1 and goes up in the overlay region with as the TFT4 of on-off element.Projection (promptly perpendicular to substrate S1 projection) on the direction that each protruding 16a narrows down in gap 30.
Therefore, as active matrix base plate S1 and counter substrate S2 couples, when forming gap 30 each other or afterwards, the spherical spacer 10 that is distributed in the gap 30 moves from the overlay region naturally.This means sept 10 displacement directly over the TFT 4 automatically.As a result, alleviate the charged influence of sept 10, suppressed the electric current leakage thus effectively.This causes effectively being suppressed at pixel electrode 8 places and keeps the voltage defective.
And because protruding 16a, the sept of having avoided being distributed in the gap 30 10 moves to TFT4, though when vibration and/vibration also is like this when being applied on the device.
Second embodiment
The above-mentioned LCD device of first embodiment comprises the TFT 4 of reverse interleaved type channel-etch.But the present invention can be applied to any TFT, as ditch pipe protection TFT and staggered TFT.
Fig. 7 represents the structure according to the active array addressing LCD device of second embodiment of the invention, has wherein adopted the reverse interleaved type TFT 4 ' of ditch pipe protection.Other structure is basically the same as those in the first embodiment.
Different with first embodiment, not etching a-Si island 4a replaces with protective seam 19 and covers island 4a.N+ type a-Si surface of contact 4b is positioned on island 4a and the layer 19.The inner end of drain electrode 5a and source electrode 5b is positioned on the surface of contact 4b.
Obviously, the LCD device of second embodiment has the advantage identical with first embodiment.
The 3rd embodiment
Fig. 8 represents that its protrusions 16b is formed on the counter substrate S2 ', and does not form projection on active-matrix substrate S1 ' according to the structure of the active array addressing LCD device of third embodiment of the invention.
Except that being flattened of surface of interlayer dielectric layer 7, the active-matrix substrate S1's of the structure of active-matrix substrate S1 ' and first embodiment is identical.Therefore, this by be marked with first embodiment in identical label save explanation to substrate S1 '.
Except that forming on the surface of external coating 13 the protruding 16b, the counter substrate S2's of the structure of counter substrate S2 ' and first embodiment is identical.Therefore, this by be marked with first embodiment in identical label save explanation to substrate S2 '.
The protruding 16b of external coating 13 is positioned at substrate S1 ' and goes up each TFT 4 opposed positions.
About the LCD device of the 3rd embodiment, protruding 16b is arranged on the substrate S2 ', substitutes to be arranged on the substrate S1 '.Therefore, for the reason identical with first embodiment, the device of the 3rd embodiment has the advantage identical with first embodiment.
Next, the manufacture method of the LCD device of the 3rd embodiment is described with reference to figure 9A～9F.
Except that interlayer dielectric layer 7 did not have protruding 16a, the step of the formation active-matrix substrate S1 ' shown in Fig. 9 A～9C was basically the same as those in the first embodiment.Surfacingization to layer 7.
Except external coating 13 had protruding 16b, the step of the formation counter substrate S2 ' shown in Fig. 9 D～9E was basically the same as those in the first embodiment.
Specifically, color filter 12a is formed on the glass sheet 11 corresponding with each pixel.The black substrate 12b that forms and TFT 4 and gate line 2 and drain line 5 are corresponding.Then, form external coating 13 in the following manner to cover color filter 12a and black substrate 12b.
On the whole surface of glass sheet 11, form external coating 13 by centrifugal coating process.In this embodiment, shown in Fig. 9 D, with layer 13 with the thickness at TFT 4 relative position places greater than the condition (as viscosity, coated conditions and the conditions of exposure of material) of determining centrifugal coating process in the mode of the thickness of all the other positions.For example, the photosensitive acrylic resin (or photosensitive epoxy resin) that will have suitable viscosity is used as starting material, and applies this resin again to cover color filter 12a and black substrate 12b, simultaneously with suitable speed rotary glass sheet 11.The photosensitive acrylic resin layer sintering reasonable time that under suitable temperature, will form thus afterwards.As a result, the photosensitive acrylic resin that forms thus is used for external coating 13.
Afterwards, utilize the gray mask (not shown) be similar to the mask 18 that adopts among first embodiment that photosensitive acrylic resin optionally is exposed under the GHI line as exposure light, and then to its development.Afterwards, under specific temperature, the photosensitive acrylic resin layer that exposes thus and develop is heat-treated process.The final external coating 13 that has protruding 16b that forms.Each protruding 16b has the gradient that is similar to protruding 16a, shown in Fig. 9 D.
Find according to present inventor's test, when height H forms the required protruding 16b that sept 10 is removed TFT 4 less than the about 1 μ m of the diameter of sept 10 or when bigger.But also find that if the gradient of the protruding 16b that forms arrives the end of source electrode 5a and drain electrode 5b, then sept 10 charged influences can be suppressed to the degree of permission.
In this embodiment, utilize gray mask 18 to form protruding 16b by the single exposure process.Therefore, can be accurately and form protruding 16b simply.But, need not give unnecessary details, also can form map-area 16b by the re-expose process.
Subsequently, on layer 13, form the transparent common electrode of making by ITO 14, and then by with first embodiment in identical process on electrode 14, form oriented layer 9b.Then oriented layer 9b is carried out specific directional process.
Is diameter that the sept 10 that the inorganic granule of 4～5 μ m is made is distributed on the inside surface of active-matrix substrate S1 ' or counter substrate S2 ' randomly.Then, substrate S1 ' and S2 ' are coupled to each other in the mode that forms gap 30.Gap 30 limits by the seal element (not shown).In this stage, spherical spacer 10 is dispersed in the whole gap 30 randomly, and therefore some septs 10 can be placed on TFT 4 directly over.But substrate S2 ' has protruding 16b on the surface within it.Therefore, sept 10 moves to the gap area (shown in the arrow among Fig. 9 F) of broad along the gradient of protruding 16b probably.In other words, sept 10 is shifted directly over TFT 4 naturally.
At last, liquid crystal is injected gap 30, and seal clearance 30 again.Make active array addressing LCD device thus according to the 3rd embodiment.
About the LCD device of the 3rd embodiment, as mentioned above, protruding 16b is formed in the zone relative with TFT4.Projection on the direction that each protruding 16b narrows down in gap 30.
Therefore, be coupled to each other when forming the gap or afterwards, the sept that is distributed in the gap moves apart the overlay region when first and second substrates.This means sept displacement directly over the TFT 4 automatically.As a result, the charged effect of sept alleviates, and has suppressed leakage current thus effectively.This causes effectively suppressing pixel electrode place voltage and keeps defective.
And because protruding 16b, even have vibration and vibration to be applied on the device, the sept of also having avoided being distributed in the gap 30 10 moves to TFT 4.
The 4th embodiment
Figure 10 represents the structure according to the active array addressing LCD device of fourth embodiment of the invention, wherein is used in active-matrix substrate S1 and the counter substrate S2 ' that is used among the 3rd embodiment among first embodiment.In other words, device comprises the protruding 16b on the protruding 16a on the substrate S1 and substrate S2 ' shown in Figure 8 among Fig. 4.
Obviously, the LCD device of the 4th embodiment has the advantage identical with first embodiment.And, because the value in gap 30 changes in the scope that doubles the first or the 3rd embodiment, so strengthened obtainable advantage.
The 5th embodiment
Figure 11 represents according to the structure of the active array addressing LCD device of fifth embodiment of the invention an active-matrix substrate S1 to be set wherein " replaces being used in the substrate S1 among first embodiment.Other structure is identical with first embodiment shown in Figure 4.
Except having adopted the interlayer dielectric layer 27 with double-layer structure, substrate S1 " has the identical structure in the substrate S1 of first embodiment.Layer 27 is formed by inorganic sub-layers 27a (as the silicon nitride sublevel) and photosensitive organic sublevel 27b (as the photosensitive acrylic resin sublevel).
Obviously, the LCD device of the 5th embodiment has the advantage identical with first embodiment.
The 6th embodiment
Figure 12 represents the structure according to the active array addressing LCD device of sixth embodiment of the invention, active-matrix substrate S1 wherein is set replaces being used in substrate S1 among first embodiment.Other structure is identical with first embodiment shown in Figure 4.
Except forming the depression 20 of radially extending in oriented layer 9a, substrate S1 has the identical structure in the substrate S1 of first embodiment.Each depression 20 has than the narrow width of sept 10 and the little degree of depth.
Obviously, the LCD device of the 6th embodiment has the advantage identical with first embodiment.Also have an additional advantage to be that spherical spacer 10 moves apart TFT4 more than first embodiment along depression 20 probably.This is because each protruding 16a comprises the radial depressions 20 with the TFT 4 of sept 10 diversion correspondences.Depression 20 can be formed on the surface of interlayer dielectric layer 7, and the form of its formation is formed on the mapping of conduct depression 20 among layer 9a for depression 20.Change
Much less, the present invention is not limited to the foregoing description.Any variation and remodeling can increase wherein in the scope of essence of the present invention.For example, color filter is positioned on the counter substrate in the above-described embodiments.But color filter also can be positioned on the active-matrix substrate, wherein adopts so-called " CF on TFT structure ".
In addition, TFT is used as on-off element in the above-described embodiments.But any other element or device also can be used as on-off element.
Though above preferred form of the present invention is described, should be appreciated that the remodeling that carries out all is conspicuous for those skilled in the art under the prerequisite that does not break away from essence of the present invention and scope.Scope of the present invention is only defined by the appended claims.
Claims (20)
1. active array addressing LCD device comprises:
(a) has first substrate of on-off element;
(b) second substrate that couples with first substrate, coupling mode are to form the gap that has sept between first and second substrates;
Be dispersed in the sept in the gap;
(c) be limited to liquid crystal in the gap; With
(d) be formed on the on-off element overlapping areas in projection;
Each projection is along protruding on the direction of gap turn narrow.
2. device as claimed in claim 1 is characterized in that, projection comprises the interlayer dielectric layer that forms the covering on-off element.
3. device as claimed in claim 1 is characterized in that projection comprises the external coating that is formed on second substrate.
4. device as claimed in claim 1 is characterized in that, part projection comprises and being formed on first substrate covering the interlayer dielectric layer of on-off element, and the remainder of projection comprises the external coating that is formed on second substrate.
5. device as claimed in claim 1 is characterized in that, each projection has than little about 1 μ m of sept diameter or more height.
6. device as claimed in claim 1 is characterized in that, each projection has the gradient that covers a corresponding on-off element fully.
7. device as claimed in claim 1 is characterized in that, projection is formed by the photosensitive organic layer.
8. device as claimed in claim 1 is characterized in that, projection is formed by the double-layer structure of inorganic dielectric layer and photosensitive organic layer.
9. device as claimed in claim 1 is characterized in that, each projection comprises the depression with an element of sept diversion correspondence.
10. device as claimed in claim 1 is characterized in that, on-off element is reverse interleaved type.
11. a method of making active array addressing LCD device comprises:
(a) provide first substrate and second substrate;
First substrate has on-off element;
Form projection in first and second substrates at least one;
(b) couple first and second substrates in the mode that forms the gap by sept each other;
Sept is distributed in this gap;
Liquid crystal is limited in this gap;
It is characterized in that projection is arranged in and the on-off element overlapping areas;
Each projection is along protruding on the direction of gap turn narrow;
When first and second substrates are coupled to each other or afterwards, sept is moved away element along the gradient of projection.
12. method as claimed in claim 11 is characterized in that, uses mask to form projection;
Described mask comprises the Resistance of blocks exposure or the clear area that allows exposure light to pass;
Resistance or clear area are formed on the position corresponding with projection.
13. method as claimed in claim 11 is characterized in that, first substrate has photosensitive interlayer dielectric layer;
Adopt gray mask on interlayer dielectric layer, to form projection;
Gray mask comprise be formed on protruding correspondence position on the Resistance, be formed on the translucent areas on the contact hole correspondence position with interlayer dielectric layer, and be formed on all the other locational translucent areas.
14. method as claimed in claim 11 is characterized in that, projection comprises the interlayer dielectric layer that covers on-off element.
15. method as claimed in claim 11 is characterized in that, projection comprises the external coating that is formed on second substrate.
16. device as claimed in claim 11 is characterized in that, part projection comprises and being formed on first substrate covering the interlayer dielectric layer of on-off element, and the remainder of projection comprises the external coating that is formed on second substrate.
17. method as claimed in claim 11 is characterized in that, each projection has than little about 1 μ m of sept diameter or more height.
18. method as claimed in claim 11 is characterized in that, each projection has the covering and the gradient that on-off element is corresponding fully.
19. method as claimed in claim 11 is characterized in that, projection is formed by the photosensitive organic layer.
20. method as claimed in claim 11 is characterized in that, projection is formed by the double-layer structure of inorganic dielectric layer and photosensitive organic layer.
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| CN02142944.8A CN1262874C (en) | 2002-09-16 | 2002-09-16 | Active addressing LCD and mfg method thereof |
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| CN02142944.8A CN1262874C (en) | 2002-09-16 | 2002-09-16 | Active addressing LCD and mfg method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111208677A (en) * | 2020-03-16 | 2020-05-29 | Tcl华星光电技术有限公司 | Array substrate and liquid crystal display panel |
| CN112837617A (en) * | 2020-08-13 | 2021-05-25 | 友达光电股份有限公司 | Display panel |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI688888B (en) * | 2018-12-19 | 2020-03-21 | 友達光電股份有限公司 | Display apparatus |
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2002
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111208677A (en) * | 2020-03-16 | 2020-05-29 | Tcl华星光电技术有限公司 | Array substrate and liquid crystal display panel |
| CN112837617A (en) * | 2020-08-13 | 2021-05-25 | 友达光电股份有限公司 | Display panel |
| TWI733557B (en) * | 2020-08-13 | 2021-07-11 | 友達光電股份有限公司 | Display panel |
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| CN1262874C (en) | 2006-07-05 |
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