CN1484008A - Multe-layer film capacitance type pressure sensor - Google Patents
Multe-layer film capacitance type pressure sensor Download PDFInfo
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- CN1484008A CN1484008A CNA031318347A CN03131834A CN1484008A CN 1484008 A CN1484008 A CN 1484008A CN A031318347 A CNA031318347 A CN A031318347A CN 03131834 A CN03131834 A CN 03131834A CN 1484008 A CN1484008 A CN 1484008A
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- capacitance
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- capacitor plate
- electropolar
- cavity
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Abstract
The invention is a multilayer film capacitance pressure sensor, composed of the capacitance polar plate and the lead connecting with electropolar plate, the capacitance polar plate being electropolar film, the medium film filled between the electropolar film, the capacitance polar plate and the lead set on the underlay, and a cavum set under the capacitance polar plate. It has interlayer film structure, the interlayer film is distorted under the action of pressure to cause the area change of medium material, so as to result in the capacitance change of the sensor, the variable capacitance is drawn from the electropolar material of the top and under polar plates, and it has excellent linearity and improves the sensitivity and linearity.
Description
One, technical field
The present invention relates to a kind of micro mechanical pressure sensor, relate in particular to the multilayer film capacitance pressure transducer.
Two, background technology
Pressure transducer represented one with a long history and obtain the commercial micromachined sensor field of using.In automobile control, environment measuring all has important use in the fields such as medical measurement.Silicon micromachining technology has entered this field on a large scale.Silicon little processing pressure resistance type pressure sensing and capacitive pressure sensing are two kinds of main mode sensors.The MPX5100 of Motorola (Motorola) series piezoresistive pressure sensor is the important commercial representative of piezoresistive pressure sensor.Yet the intrinsic bigger temperature drift characteristic of piezoresistive pressure sensor makes it in the very big application of range of temperature limitation be arranged.The condenser type device has and approaches zero temperature coefficient, but capacitance pressure transducer, commonly used adopts the pressure-dependent sensing mode of electric capacity spacing, and what cause the condenser type device non-linearly is difficult to eliminate (electric capacity is inversely proportional to the spacing size).Although can reduce effect of nonlinear by dwindling measurement range, measurement range is restricted.
Three, technology contents
Technical matters: the invention provides a kind of can with the multilayer film capacitance pressure transducer, of standard ic process compatibility, have the good He highly sensitive advantage of the linearity.
Technical scheme: the present invention is a kind of multilayer film capacitance pressure transducer, that is used to transmit pressure signal, lead-in wire by capacitor plate and connection electrode plate is formed, capacitor plate is an electrode film, fill by the capacitor dielectric film between the electrode film, capacitor plate and lead-in wire are located on the substrate, are provided with cavity below capacitor plate.
Technique effect: the present invention has changed the electrode plate structure of its electric capacity, adopted multi-layer film structure, promptly adopt two-layer battery lead plate film that deielectric-coating is clipped in therebetween, form the interlayer film structure, the interlayer film effect of being stressed produces deformation, thereby the dielectric material area changes and causes sensor capacitance to change, and variable capacitance is drawn by last bottom crown electrode material, because area change and pressure present good linear relationship, so interlayer capacitance pressure transducer, structure has the good linearity.The specific inductive capacity of interlayer capacitor dielectric layer is higher than dielectric constant of air value several times, thereby effectively raises the variable quantity of electric capacity with pressure, and the sensitivity of sensor is improved.The rear end adopts the body process technology not influence the IC processes of front end, has guaranteed the compatibility of IC standard technology, carries out rear end element and be processed with and be beneficial to the sensor construction batch machining and produce after standard technology completes.Rear end element is processed with the border condition of propping up admittedly that strengthens sensor sensing film that is beneficial to, and the area that increases sensor sensing film is to help improving pressure-sensitive capacitance change.The interlayer capacitance structure that the present invention proposes has improved the sensitivity and the linearity of sensor effectively, and temperature drift is little, is applicable to the pressure survey in the large-temperature range.
Four, description of drawings
Fig. 1 is an enforcement structural representation of the present invention.
Fig. 2 is that of the present invention another implemented structural representation.
Fig. 3 is a structure cut-open view of the present invention.
Fig. 4 is a capacitance electrode plate structure cut-open view of the present invention.
Five, specific embodiments
The present invention is a kind of multilayer film capacitance pressure transducer, that is used to transmit pressure signal, by capacitor plate 21 and 22 and the lead-in wire 211 and 221 that is connected in battery lead plate form, it is characterized in that capacitor plate 21 and 22 is electrode film, fill by capacitor dielectric film 23 between the electrode film, capacitor plate 21 and 22 and go between and 211 and 221 be located on the substrate 1, below capacitor plate, be provided with cavity, the cavity of this capacitor plate below is a closed cavity 11, also can be open cavity 12 or the gap between battery lead plate and substrate, the present invention adopts integrated circuit (IC) processing technology and rear end micromechanics body process technology in conjunction with forming the silicon micro-sensor structure.Front-end process processing comprises: oxide layer deposit on the substrate silicon material, make the heavy doping injection zone by lithography, form the bottom crown of etch stop layer as interlayer electric capacity, the deposit of dielectric thin-film material and figure photoetching, polycrystalline silicon material deposit, heavy doping and photoetching form the top crown of interlayer electric capacity, oxide layer deposit, fairlead photoetching, metal deposit and photoetching, passivation layer deposit and photoetching.The rear end element processing technology comprises: corrosion of the silicon chip back side and wafer bonding.
Claims (4)
1, a kind of multilayer film capacitance pressure transducer, that is used to transmit pressure signal, form by capacitor plate (21 and 22) and the lead-in wire (211 and 221) that is connected in battery lead plate, it is characterized in that capacitor plate (21 and 22) is an electrode film, fill by capacitor dielectric film (23) between the electrode film, capacitor plate (21 and 22), capacitor dielectric film (23) and lead-in wire (211 and 221) are located on the substrate (1), are provided with cavity below capacitor plate.
2, multilayer film capacitance pressure transducer, according to claim 1 is characterized in that the cavity of capacitor plate below is closed cavity (11).
3, multilayer film capacitance pressure transducer, according to claim 1 is characterized in that the cavity of capacitor plate below is open cavity (12).
4, multilayer film capacitance pressure transducer, according to claim 1 is characterized in that the cavity of capacitor plate below is the gap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031318347A CN1186607C (en) | 2003-06-10 | 2003-06-10 | Multe-layer film capacitance type pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031318347A CN1186607C (en) | 2003-06-10 | 2003-06-10 | Multe-layer film capacitance type pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1484008A true CN1484008A (en) | 2004-03-24 |
| CN1186607C CN1186607C (en) | 2005-01-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031318347A Expired - Fee Related CN1186607C (en) | 2003-06-10 | 2003-06-10 | Multe-layer film capacitance type pressure sensor |
Country Status (1)
| Country | Link |
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| CN (1) | CN1186607C (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101614752B (en) * | 2008-06-25 | 2010-12-01 | 中国科学院电子学研究所 | Micro capacitive type wind velocity sensor |
| CN103748447A (en) * | 2011-07-01 | 2014-04-23 | 恩德莱斯和豪瑟尔两合公司 | Method for operating an absolute pressure or relative pressure sensor with a capacitive transducer |
| CN105606269A (en) * | 2015-09-11 | 2016-05-25 | 东南大学 | Capacitive pressure sensor with high linearity and manufacturing method thereof |
| WO2019019843A1 (en) * | 2017-07-28 | 2019-01-31 | 佛山市川东磁电股份有限公司 | Double-film capacitive pressure sensor and manufacturing method |
| CN109916292A (en) * | 2019-02-25 | 2019-06-21 | 武汉工程大学 | A kind of preparation method of multi-layer capacity formula flexible intelligent wearable sensors part |
| CN114323408A (en) * | 2021-11-15 | 2022-04-12 | 歌尔微电子股份有限公司 | Multi-range multi-sensitivity pressure MEMS chip |
-
2003
- 2003-06-10 CN CNB031318347A patent/CN1186607C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101614752B (en) * | 2008-06-25 | 2010-12-01 | 中国科学院电子学研究所 | Micro capacitive type wind velocity sensor |
| CN103748447A (en) * | 2011-07-01 | 2014-04-23 | 恩德莱斯和豪瑟尔两合公司 | Method for operating an absolute pressure or relative pressure sensor with a capacitive transducer |
| CN103748447B (en) * | 2011-07-01 | 2015-09-09 | 恩德莱斯和豪瑟尔两合公司 | A kind of operation has the absolute pressure of capacitive pick-up or the method for relative pressure sensor |
| US9470773B2 (en) | 2011-07-01 | 2016-10-18 | Endress + Hauser Gmbh + Co. Kg | Method for operating an absolute, or relative, pressure sensor having a capacitive transducer |
| CN105606269A (en) * | 2015-09-11 | 2016-05-25 | 东南大学 | Capacitive pressure sensor with high linearity and manufacturing method thereof |
| CN105606269B (en) * | 2015-09-11 | 2018-04-03 | 东南大学 | A kind of capacitance pressure transducer, with high linearity and preparation method thereof |
| WO2019019843A1 (en) * | 2017-07-28 | 2019-01-31 | 佛山市川东磁电股份有限公司 | Double-film capacitive pressure sensor and manufacturing method |
| CN109916292A (en) * | 2019-02-25 | 2019-06-21 | 武汉工程大学 | A kind of preparation method of multi-layer capacity formula flexible intelligent wearable sensors part |
| CN114323408A (en) * | 2021-11-15 | 2022-04-12 | 歌尔微电子股份有限公司 | Multi-range multi-sensitivity pressure MEMS chip |
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| Publication number | Publication date |
|---|---|
| CN1186607C (en) | 2005-01-26 |
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Granted publication date: 20050126 Termination date: 20200610 |
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