CN1484008A - Multilayer film capacitive pressure sensor - Google Patents
Multilayer film capacitive pressure sensor Download PDFInfo
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- CN1484008A CN1484008A CNA031318347A CN03131834A CN1484008A CN 1484008 A CN1484008 A CN 1484008A CN A031318347 A CNA031318347 A CN A031318347A CN 03131834 A CN03131834 A CN 03131834A CN 1484008 A CN1484008 A CN 1484008A
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- 239000003990 capacitor Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 11
- 239000011229 interlayer Substances 0.000 abstract description 7
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 238000009530 blood pressure measurement Methods 0.000 abstract description 2
- 239000003989 dielectric material Substances 0.000 abstract description 2
- 239000007772 electrode material Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
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- 238000000034 method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 230000007797 corrosion Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
本发明是一种用于传递压力信号的多层膜电容式压力传感器，由电容极板及连接电极板的引线组成，电容极板为电极膜，电极膜之间由电容介质膜填充，电容极板及引线设在衬底上，在电容极板的下方设有空腔。本发明改变了其电容的极板结构，采用了多层膜结构，即采用两层电极板膜将介质膜夹在其间，形成夹层膜结构，夹层膜受压力作用产生形变，介质材料面积发生变化从而导致传感器电容发生变化，可变电容由上下极板电极材料引出，由于面积变化与压力呈现很好的线性关系，所以夹层电容式压力传感器结构具有很好的线性度。本发明提出的夹层电容结构有效地提高了传感器的灵敏度和线性度，温度漂移小，适用于大温度范围内的压力测量。
The present invention is a multi-layer capacitive pressure sensor for transmitting pressure signals, which is composed of capacitive plates and lead wires connected to the electrode plates, the capacitive plates are electrode films, the electrode films are filled with capacitive dielectric films, The plate and the leads are arranged on the substrate, and a cavity is arranged under the capacitor plate. The invention changes the plate structure of the capacitor and adopts a multi-layer film structure, that is, two layers of electrode plate films are used to sandwich the dielectric film in between to form a sandwich film structure. The interlayer film is deformed by pressure and the area of the dielectric material changes. As a result, the capacitance of the sensor changes, and the variable capacitance is drawn from the electrode material of the upper and lower plates. Since the area change and the pressure show a good linear relationship, the sandwich capacitive pressure sensor structure has good linearity. The interlayer capacitance structure proposed by the invention effectively improves the sensitivity and linearity of the sensor, has small temperature drift, and is suitable for pressure measurement in a wide temperature range.
Description
一、技术领域1. Technical field
本发明涉及一种微机械压力传感器，尤其涉及多层膜电容式压力传感器。The invention relates to a micromechanical pressure sensor, in particular to a multilayer membrane capacitive pressure sensor.
二、背景技术2. Background technology
压力传感器代表了一个历史悠久并且得到商业应用的微机械加工传感器领域。在汽车控制，环境检测，医学测量等领域中都有重要的应用。硅微加工技术已经大范围的进入了这个领域。硅微加工压阻式压力传感和电容式压力传感是两种主要的传感器模式。摩托罗拉(Motorola)MPX5100系列压阻式压力传感器是压阻式压力传感器的重要商用代表。然而压阻式压力传感器固有的较大的温度漂移特性使其在温度变化范围很大的应用领域有局限性。电容式器件具有接近于零的温度系数，但是常用电容式压力传感器采用电容间距随压力变化的传感方式，致使电容式器件的非线性难以消除(电容反比于间距大小)。尽管通过缩小测量范围可以降低非线性的影响，但是测量范围受到了限制。Pressure sensors represent an area of micromachined sensors with a long history and commercial application. It has important applications in automotive control, environmental detection, medical measurement and other fields. Silicon micromachining technology has entered the field on a large scale. Silicon micromachined piezoresistive pressure sensing and capacitive pressure sensing are the two main sensor modes. Motorola MPX5100 series piezoresistive pressure sensor is an important commercial representative of piezoresistive pressure sensor. However, the inherently large temperature drift characteristic of the piezoresistive pressure sensor has limitations in the application field with a large temperature range. Capacitive devices have a temperature coefficient close to zero, but commonly used capacitive pressure sensors use a sensing method in which the capacitance distance varies with pressure, making it difficult to eliminate the nonlinearity of capacitive devices (capacitance is inversely proportional to the size of the distance). Although the effect of nonlinearity can be reduced by reducing the measurement range, the measurement range is limited.
三、技术内容3. Technical content
技术问题：本发明提供一种可与标准集成电路工艺兼容的多层膜电容式压力传感器，具有线性度好和灵敏度高的优点。Technical problem: The present invention provides a multilayer film capacitive pressure sensor compatible with standard integrated circuit technology, which has the advantages of good linearity and high sensitivity.
技术方案：本发明是一种用于传递压力信号的多层膜电容式压力传感器，由电容极板及连接电极板的引线组成，电容极板为电极膜，电极膜之间由电容介质膜填充，电容极板及引线设在衬底上，在电容极板的下方设有空腔。Technical solution: The present invention is a multi-layer film capacitive pressure sensor for transmitting pressure signals, which is composed of a capacitor plate and a lead wire connected to the electrode plate. The capacitor plate is an electrode film, and the electrode film is filled with a capacitor dielectric film. , the capacitor plate and the leads are arranged on the substrate, and a cavity is arranged under the capacitor plate.
技术效果：本发明改变了其电容的极板结构，采用了多层膜结构，即采用两层电极板膜将介质膜夹在其间，形成夹层膜结构，夹层膜受压力作用产生形变，介质材料面积发生变化从而导致传感器电容发生变化，可变电容由上下极板电极材料引出，由于面积变化与压力呈现很好的线性关系，所以夹层电容式压力传感器结构具有很好的线性度。夹层电容介质层的介电常数高于空气介电常数值数倍，因而有效的提高了电容随压力的变化量，传感器的灵敏度得到提高。后端采用体加工技术不影响前端的IC工艺加工，保证了IC标准工艺的兼容性，在标准工艺制作完成后进行后端体加工有利于传感器结构批量加工生产。后端体加工有利于增强传感器敏感膜的固支边界条件，增大传感器敏感膜的面积以有利于提高压力敏感的电容变化量。本发明提出的夹层电容结构有效地提高了传感器的灵敏度和线性度，温度漂移小，适用于大温度范围内的压力测量。Technical effect: the present invention changes the plate structure of the capacitor and adopts a multi-layer film structure, that is, two layers of electrode plate films are used to sandwich the dielectric film in between to form a sandwich film structure. The interlayer film is deformed under pressure, and the dielectric material Changes in the area lead to changes in the capacitance of the sensor. The variable capacitance is derived from the electrode material of the upper and lower plates. Since the area change and pressure have a good linear relationship, the sandwich capacitive pressure sensor structure has good linearity. The dielectric constant of the interlayer capacitor dielectric layer is several times higher than the value of the air dielectric constant, thus effectively increasing the variation of capacitance with pressure and improving the sensitivity of the sensor. The back-end body processing technology does not affect the front-end IC process processing, which ensures the compatibility of the IC standard process. After the standard process is completed, the back-end body processing is conducive to the batch processing and production of the sensor structure. The processing of the back-end body is beneficial to enhance the fixed boundary condition of the sensor sensitive membrane, and increase the area of the sensor sensitive membrane to improve the pressure-sensitive capacitance change. The interlayer capacitance structure proposed by the invention effectively improves the sensitivity and linearity of the sensor, has small temperature drift, and is suitable for pressure measurement in a wide temperature range.
四、附图说明4. Description of drawings
图1是本发明的实施结构示意图。Fig. 1 is a schematic diagram of the implementation structure of the present invention.
图2是本发明的另一实施结构示意图。Fig. 2 is a schematic structural diagram of another implementation of the present invention.
图3是本发明的结构剖视图。Fig. 3 is a structural sectional view of the present invention.
图4是本发明的电容电极板结构剖视图。Fig. 4 is a cross-sectional view of the capacitor electrode plate structure of the present invention.
五、具体实施方案5. Specific implementation plan
本发明是一种用于传递压力信号的多层膜电容式压力传感器，由电容极板21和22及连于电极板的引线211和221组成，其特征在于电容极板21和22为电极膜，电极膜之间由电容介质膜23填充，电容极板21和22及引线211和221设在衬底1上，在电容极板的下方设有空腔，该电容极板下方的空腔为封闭腔体11，也可以是开放空腔12或是位于电极板与衬底之间的间隙，本发明采用集成电路IC加工工艺和后端微机械体加工技术结合形成硅微传感器结构。前端工艺加工包括：衬底硅材料上氧化层淀积，光刻出重掺杂注入区域，形成腐蚀停止层作为夹层电容的下极板，介质薄膜材料的淀积与图形光刻，多晶硅材料淀积、重掺杂及光刻形成夹层电容的上极板，氧化层淀积，引线孔光刻，金属淀积和光刻，钝化层淀积及光刻。后端体加工工艺包括：硅片背面腐蚀以及硅片键合。The present invention is a multilayer film capacitive pressure sensor for transmitting pressure signals, which is composed of capacitive plates 21 and 22 and
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031318347A CN1186607C (en) | 2003-06-10 | 2003-06-10 | Multe-layer film capacitance type pressure sensor |
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| CNB031318347A CN1186607C (en) | 2003-06-10 | 2003-06-10 | Multe-layer film capacitance type pressure sensor |
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| CN1484008A true CN1484008A (en) | 2004-03-24 |
| CN1186607C CN1186607C (en) | 2005-01-26 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101614752B (en) * | 2008-06-25 | 2010-12-01 | 中国科学院电子学研究所 | A Miniature Capacitive Wind Speed Sensor |
| CN103748447A (en) * | 2011-07-01 | 2014-04-23 | 恩德莱斯和豪瑟尔两合公司 | Method for operating an absolute pressure or relative pressure sensor with a capacitive transducer |
| CN105606269A (en) * | 2015-09-11 | 2016-05-25 | 东南大学 | Capacitive pressure sensor with high linearity and manufacturing method thereof |
| WO2019019843A1 (en) * | 2017-07-28 | 2019-01-31 | 佛山市川东磁电股份有限公司 | Double-film capacitive pressure sensor and manufacturing method |
| CN109916292A (en) * | 2019-02-25 | 2019-06-21 | 武汉工程大学 | A kind of preparation method of multilayer capacitive flexible smart wearable sensor device |
| CN114323408A (en) * | 2021-11-15 | 2022-04-12 | 歌尔微电子股份有限公司 | Multi-range multi-sensitivity pressure MEMS chip |
-
2003
- 2003-06-10 CN CNB031318347A patent/CN1186607C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101614752B (en) * | 2008-06-25 | 2010-12-01 | 中国科学院电子学研究所 | A Miniature Capacitive Wind Speed Sensor |
| CN103748447A (en) * | 2011-07-01 | 2014-04-23 | 恩德莱斯和豪瑟尔两合公司 | Method for operating an absolute pressure or relative pressure sensor with a capacitive transducer |
| CN103748447B (en) * | 2011-07-01 | 2015-09-09 | 恩德莱斯和豪瑟尔两合公司 | A kind of operation has the absolute pressure of capacitive pick-up or the method for relative pressure sensor |
| US9470773B2 (en) | 2011-07-01 | 2016-10-18 | Endress + Hauser Gmbh + Co. Kg | Method for operating an absolute, or relative, pressure sensor having a capacitive transducer |
| CN105606269A (en) * | 2015-09-11 | 2016-05-25 | 东南大学 | Capacitive pressure sensor with high linearity and manufacturing method thereof |
| CN105606269B (en) * | 2015-09-11 | 2018-04-03 | 东南大学 | A kind of capacitance pressure transducer, with high linearity and preparation method thereof |
| WO2019019843A1 (en) * | 2017-07-28 | 2019-01-31 | 佛山市川东磁电股份有限公司 | Double-film capacitive pressure sensor and manufacturing method |
| CN109916292A (en) * | 2019-02-25 | 2019-06-21 | 武汉工程大学 | A kind of preparation method of multilayer capacitive flexible smart wearable sensor device |
| CN114323408A (en) * | 2021-11-15 | 2022-04-12 | 歌尔微电子股份有限公司 | Multi-range multi-sensitivity pressure MEMS chip |
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| CN1186607C (en) | 2005-01-26 |
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