CN1477742A - Resonant cavity system of adjustable multi-wavelength semiconductor laser - Google Patents
Resonant cavity system of adjustable multi-wavelength semiconductor laser Download PDFInfo
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- CN1477742A CN1477742A CNA021302790A CN02130279A CN1477742A CN 1477742 A CN1477742 A CN 1477742A CN A021302790 A CNA021302790 A CN A021302790A CN 02130279 A CN02130279 A CN 02130279A CN 1477742 A CN1477742 A CN 1477742A
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Abstract
The present invention provides a resonant cavity system for adjustable multiwavelength semiconductor laser, and the light-modulating slit plate of the resonant cavity system has several slits, every slit is correspondent to a adjustable reflector. It can respectively regulate the reflecting angle of every adjustable reflector to make every incident laser beam be back reflected into original resonance path without loss.
Description
Technical field
The present invention provides a kind of semiconductor laser resonant cavity system, refers to a kind of resonant cavity system that utilizes a plurality of speculums to come the different laser of difference reflection wavelength especially.
Background technology
Because the arriving of information age, utilize broadband network with wavelength division multiplex technology (wavelength-division multiplex, WDM) providing in a large number and fast, message transmission has become inexorable trend, traditionally, main optical-fibre communications band wavelength is approximately to drop on 1.55 microns and 1.3 microns, because in the fiber loss and the dispersion penalty minimum of this two frequency band.Even to this day, up-to-date optical fiber development of science and technology can significantly reduce optical fiber 1.4 microns hydroxyl (hydroxyl) absorption loss, and therefore, in the optical-fibre communications in future, the wideband communication of 300 nanometers has been within sight.So it is the task of top priority that the adjustable LASER Light Source of wideband is provided.
After the research of beginning multiple quantum well structure in 1974, this designed semiconductor laser of superlattice structure that utilizes forms the development trend of taking the course of its own, and the advantage of its high efficiency, low starting oscillation current and wavelength-tunable system is that the best LASER Light Source of advanced optical system is selected always.Recently, the development of multiple quantum well semiconductor laser can provide suitable wide frequency light source, but can select desired single-frequency laser light via outside wideband conditioning technology again, for example utilize the wideband gain techniques semi-conductor optical amplifier (semiconductor optical amplifiers, SOAs).But, the multi-wavelength wideband tunable characteristic of this semi-conductor optical amplifier still is subjected to the restriction of traditional resonant cavity system.
Though many laser light wavelength-modulation technique are arranged at present, Fabry-Perot (FP) wavelength-modulated filter for example, the diffraction grating filter, rotary thin film filter (rotated thin-film filter), electric light adjustable filter (Electo-Optic tunable fiter), and the known optical wavelength modulation technique of adjustable optical fiber grating filter or the like, these optical wavelength modulation techniques normally are used in the vibration of specific single wavelength and select, and except the correlation technique of utilizing grating, its adjustable wave-length coverage is only limited in 100 nanometers.But, when the resonant cavity system of wavelength-tunable integral expression semiconductor laser used the diffraction grating technology, its adjustable wave-length coverage just can reach 200 nanometers.
With reference to figure 1.Fig. 1 is the schematic diagram of the resonant cavity system 100 of known adjustable semiconductor laser, and resonant cavity system 100 comprises: a grating 10, collimation lens 11 and a FP semiconductor laser or a semi-conductor optical amplifier 13.FP semiconductor laser or semi-conductor optical amplifier 13 comprise: one is used for waveguide (waveguide) 15, one first end faces and one second end face of conducting light, and this first end face is coated with an anti-reflecting layer 12, and this second end face is the nature plane of disruption.This resonant cavity system only is applicable to the vibration design of specific single wavelength, after LASER Light Source is produced by FP semiconductor laser or semi-conductor optical amplifier 13, exhale through anti-reflecting layer 12, through collimating lens 11 divergent beams can being concentrated again is that a collimated light beam incides grating 10, and light beam incides the incidence angle θ of grating 10
iAngle of reflection θ with folded light beam
rRelation can be expressed as following formula
(formula 1)
Wherein λ is the laser light wavelength; Λ is the fringe period length on the grating; And m is an integer.Satisfy θ when adjusting to selected laser light wavelength
r=-θ
iThe time, selected folded light beam can reflect back into collimating lens 11 along the path of incident beam, enter FP semiconductor laser or semi-conductor optical amplifier 13 through anti-reflecting layer 12 again, so form single wavelength laser photoresonance path, will export laser beam 14 at last and send from second end face of FP semiconductor laser or semi-conductor optical amplifier 13.
With reference to figure 2.Fig. 2 is the schematic diagram of the resonant cavity system 200 of another known adjustable semiconductor laser, resonant cavity system 200 comprises: a grating 20, collimation lens 21 and a FP semiconductor laser or a semi-conductor optical amplifier 23, FP semiconductor laser or semi-conductor optical amplifier 12 comprise: one is used for the waveguide 26 of conducting light, with one first end face and one second end face, this first end face is coated with an anti-reflecting layer 22, and this second end face is coated with a high reflection layer 24.This resonant cavity system also is the vibration design that only is applicable to specific single wavelength, different is that its laser beam is via grating 20 outputs, operation principle is roughly the same, after LASER Light Source is produced by FP semiconductor laser or semi-conductor optical amplifier 23, may reflect earlier through high reflection layer 24, or directly exhale through anti-reflecting layer 22, through collimating lens 21 divergent beams being concentrated again is that a collimated light beam incides grating 20, utilize the laser beam light splitting characteristic of grating again, extract the laser light of specific wavelength from suitable angle out.
When desired laser beam is the light source of dual wavelength or multi-wavelength, the resonant cavity system of the adjustable semiconductor laser of above-mentioned two kinds of known technologies all can't satisfy institute to be asked, and therefore the dual wavelength resonant cavity system 300 of another kind of known adjustable semiconductor laser shown in Figure 3 is just arranged.Please refer to Fig. 3, resonant cavity system 300 comprises a grating 30, one first collimating lens 31, semiconductor optical amplifier 32, one second collimating lenses 33, one convex lens 34, one light modulation gap plate 35, and a speculum 36, light modulation gap plate 35 includes one first slot 301 and one second slot 302, and grating 30 is to place on the focal length of convex lens 34.After LASER Light Source is produced by semi-conductor optical amplifier 32, it is that a collimated light beam incides grating 30 that divergent beams are concentrated through collimating lens 31, after grating 30 beam split reflection, it is respectively a short-wavelength beam 37 and a long wavelength light beam 38 that the selected folded light beam in two roads is arranged, but short-wavelength beam 37 and long wavelength light beam 38 equal planoconvex lenses 34 and form first slot 301 and second slot 302 that directional light incides light modulation gap plate 35 respectively, reflect by speculum 36 again, so form two laser light resonance path, at last laser beam 39 is sent via second collimating lens 33.Therefore, the laser beam of its output is by short-wavelength beam 37 and long wavelength light beam 38 formed dual wavelength light beams.If light modulation gap plate 35 includes more slot, then in like manner analogize and to form the multi-wavelength light beam.But, in the dual wavelength resonant cavity system 300 of adjustable semiconductor laser, to between grating 30 and speculum 36, put convex lens 34 exactly, be very difficult on the practice, when the storing of convex lens 34 has deviation, short-wavelength beam 37 and long wavelength light beam 38 can't form directional light through behind the convex lens 34, actual still more laser beam and the nonideal luminous point that incides grating 30, this situation cause equally can't be parallel two road length wavelength light beams, so only wanting to reflect ideally these nonparallel two road length wavelength light beams with a speculum 36, to get back to resonance path be impossible, so will cause the inhomogeneous resonance loss of dual wavelength resonant cavity system, in like manner can be extrapolated to the inhomogeneous resonance loss of multi-wavelength resonant cavity system.
Summary of the invention
Therefore main purpose of the present invention is to provide a kind of multi-wavelength resonant cavity system that utilizes the adjustable semiconductor laser of multiple reflection mirror, to address the above problem.
The invention provides a kind of multi-wavelength resonant cavity system of adjustable semiconductor laser, comprise: the semiconductor optical amplifier, also comprise one first end face and one second end face, this first end face is to be coupled to resonant cavity, and this second end face is to be a laser light output end face; One grating; One convex lens; One light modulation gap plate, it more includes many slots; A plurality of adjustable mirrors; Wherein this grating is to be situated between on the laser light resonance path of this first end face place this semi-conductor optical amplifier and this light modulation gap plate, this light modulation gap plate is in the reflecting surface of these a plurality of adjustable mirrors before putting, the reflecting surface of these a plurality of adjustable mirrors is respectively in alignment with these many slots of this light modulation gap plate, and this of this semi-conductor optical amplifier first end face is via these many slots of this grating, these convex lens, this light modulation gap plate, form multi-stripe laser bundle resonance path to the reflecting surface of these a plurality of adjustable mirrors.These a plurality of adjustable mirrors are independently to adjust its reflection angle, in order to the multi-wavelength resonance path of many non-parallel incidents of correspondence, make every incoming laser beam all can the former resonance path of lossless ground reflected back.
Description of drawings
Fig. 1 is single wavelength resonances chamber system schematic of a known adjustable semiconductor laser.
Fig. 2 is single wavelength resonances chamber system schematic of other a known adjustable semiconductor laser.
Fig. 3 is the dual wavelength resonant cavity system schematic diagram of a known adjustable semiconductor laser.
Fig. 4 is the dual wavelength resonant cavity system schematic diagram of adjustable semiconductor laser of the present invention.
Fig. 5 is the spectrum analysis figure of Fig. 4 dual wavelength resonant cavity system.
Fig. 6 is four wavelength resonances chamber system schematic of adjustable semiconductor laser of the present invention.
Graphic symbol description:
10,20,30 gratings
11,21 collimating lenses
12,22 anti-reflecting layers
13,23 FP semiconductor laser or semi-conductor optical amplifiers
14,25,39 output laser beams
24 high reflection layers
31 first collimating lenses
32 semi-conductor optical amplifiers
33 second collimating lenses
34 convex lens
35,601 light modulation gap plates
36 speculums
37 short-wavelength beams
38 long wavelength light beams
41,621 first adjustable mirrors
42,622 second adjustable mirrors
100,200,300,600 resonant cavities
301,611 first slots
302,612 second slots
303 waveguides
613 treble-slots
614 the 4th slots
623 the 3rd adjustable mirrors
624 the 4th adjustable mirrors
631 first wavelength light beams
632 second wavelength light beams
633 three-wavelength light beams
634 the 4th wavelength light beams
Embodiment
With reference to figure 3 and Fig. 4.Figure 4 shows that dual wavelength resonant cavity system 400 according to a kind of adjustable semiconductor laser of the present invention, it is the improved system for the dual wavelength resonant cavity system 300 of known adjustable semiconductor laser shown in Figure 3, resonant cavity system 400 comprises a grating 30, one first collimating lens 31, semiconductor optical amplifier 32, one second collimating lenses 33, one convex lens 34, one light modulation gap plate, 35, one first adjustable mirrors 41, and one second adjustable mirror 42.Semi-conductor optical amplifier 32 also can be a multiple quantum well semiconductor laser, and it includes a shaped form waveguide 303 to avoid forming the internal resonance condition of this semiconductor laser.Light modulation gap plate 35 includes one first slot 301 and one second slot 302, and grating 30 is to place on the focal length of convex lens 34.First and second adjustable mirrors 41,42 can be optical micro electro-mechanical systems (optical micro-electro-mechanics system, MEMS) micro-reflector in or digit optical are handled (digital lightprocessing, DLP) digital micro-reflector element in (digital micro-mirror device), and by two groups of independently actuator controls (not being presented on the figure).After LASER Light Source is produced by semi-conductor optical amplifier 32, it is that a collimated light beam incides grating 30 that divergent beams are concentrated through collimating lens 31, after grating 30 beam split reflection, it is respectively a short-wavelength beam 37 and a long wavelength light beam 38 that the selected folded light beam in two roads is arranged, but short-wavelength beam 37 and long wavelength light beam 38 equal planoconvex lenses 34 and incide first slot 301 and second slot 302 of light modulation gap plate 35 respectively, reflect by first adjustable mirror 41 and second adjustable mirror 42 respectively again, so form two laser light resonance path, will export laser beam 39 at last and send via second collimating lens 33.Therefore, the laser beam of its output is by short-wavelength beam 37 and long wavelength light beam 38 formed dual wavelength light beams.If convex lens 34 can't be seated between the grating 30 and first and second adjustable mirrors 41,42 exactly, that is to say, when the storing of convex lens 34 has deviation, short-wavelength beam 37 and long wavelength light beam 38 can't form collimated light beam through behind the convex lens 34, can utilize this moment first adjustable mirror 41 that can independently adjust angle and second adjustable mirror 42 with the former resonance path of this lossless ground of resonant beam, two roads reflected back, thereby the inhomogeneous resonance loss of solution traditional double wavelength resonances chamber system.
With reference to figure 5.Figure 5 shows that analysis spectrum according to the dual wavelength resonant cavity system 400 of a kind of adjustable semiconductor laser of the present invention, its transverse axis is output laser light wavelength, the longitudinal axis is output laser spectroscopy component relative intensity, adjust first slot 301 of light modulation gap plate 35 and the slot position of second slot 302 and can obtain two different laser light resonance path with the slot spacing, thereby cause different resonance dual wavelengths, Fig. 5 shows the output laser spectroscopy 500 corresponding to four kinds of different slot spacings, 502,504,506, it corresponds to brave 32nm between slot respectively, 63nm, 138nm, 170nm, and since by first adjustable mirror 41 that can independently adjust and second adjustable mirror 42 with the former resonance path of this lossless ground of resonant beam, two roads reflected back, so as shown in Figure 5, it has very high dual wavelength light signal/noise ratio, and selected dual-wavelength laser beam component intensity much at one, that is to say that dual wavelength resonant cavity system of the present invention provides the gain characteristic of dual wavelength resonance very uniformly.
With reference to figure 3 and Fig. 6.Figure 6 shows that four wavelength resonances chamber systems 600 according to another kind of adjustable semiconductor laser of the present invention, it is the improved system for the dual wavelength resonant cavity system 300 that is similar to known adjustable semiconductor laser shown in Figure 3, resonant cavity system 600 comprises a grating 30, one first collimating lens 31, semiconductor optical amplifier 32, one second collimating lens 33, one convex lens 34, one light modulation gap plate 601, one first adjustable mirror, 621, one second adjustable mirrors 622, the 3rd adjustable mirror 623, and one the 4th adjustable mirror 624, semi-conductor optical amplifier 32 includes a shaped form waveguide 303 to avoid forming the internal resonance condition of semiconductor laser, and light modulation gap plate 601 includes one first slot, 611, one second slots 612, one treble-slot 613, and one the 4th slot 614.Grating 30 is to place on the focal length of convex lens 34, four adjustable mirrors 621,622,623,624 can be the digital micro-reflector elements during micro-reflector in the optical micro electro-mechanical systems or digit optical are handled, and by four groups of independently actuator controls (not being presented on the figure).After LASER Light Source is produced by semi-conductor optical amplifier 32, it is that a collimated light beam incides grating 30 that divergent beams are concentrated through collimating lens 31, after grating 30 beam split reflection, it is respectively one first wavelength light beam 631 that the selected folded light beam in four roads is arranged, one second wavelength light beam 632, one three-wavelength light beam 633, and one the 4th wavelength light beam 634, but this selected folded light beam in four roads is planoconvex lens 34 and incide four slots 611 of light modulation gap plate 601 respectively all, 612,613,614, again respectively by four adjustable mirrors 621,622,623,624 reflect, so form four laser light resonance path, will export laser beam 39 at last and send via second collimating lens 33.Therefore, the laser beam of its output is by four resonant beam, 631,632,633,634 formed four wavelength light beams.If convex lens 34 can't be seated in grating 30 and adjustable mirror 621 exactly, 622,623, between 624, that is to say, when the storing of convex lens 34 has deviation, article four, laser beam 631,632,633, can't form collimated light beam behind the 634 process convex lens 34, can utilize four adjustable mirrors 621 can independently adjusting angle this moment, 622,623,624 with four road resonant beam 631,632,633, the former resonance path of 634 lossless ground reflected backs, thereby the inhomogeneous resonance loss that solves traditional four wavelength resonances chamber systems, in like manner can be extrapolated to multi-wavelength resonant cavity system of the present invention.
As mentioned above, only compare with traditional with the multi-wavelength resonant cavity system of the adjustable semiconductor laser of a speculum, the multi-wavelength resonant cavity system of adjustable semiconductor laser of the present invention is to utilize a plurality of adjustable mirrors with corresponding multi-stripe laser photoresonance path, these a plurality of adjustable mirrors are independently to adjust its reflection angle, in order to every former resonance path of lossless ground of incident laser light beam reflected back, thereby the inhomogeneous resonance loss that solves traditional multi-wavelength resonant cavity system.
The above only is preferred embodiment of the present invention, and all equivalent variations and modifications of doing according to claim of the present invention all should belong to the scope that claims of the present invention cover.
Claims (12)
1. a laser resonator system is characterized in that, comprising:
One is used to produce the light source of light;
One is used to decompose light that this light source transmits and the grating of each light beam of decompositing with different angle reflections;
Be used to reflect a plurality of speculums of each light beam that this grating transmits;
Wherein these a plurality of speculums each beam reflection that this grating is transmitted is to this grating, and returns the light beam of this light source after with output resonance via this optical grating reflection.
2. laser resonator as claimed in claim 1 system, it is characterized in that: also comprise the panel of being located between this grating and this a plurality of speculums, described panel is provided with a plurality of slots corresponding to these a plurality of speculums, is used for only making the light of specific wavelength to reach this a plurality of speculums.
3. laser resonator as claimed in claim 1 system is characterized in that: also comprise and be located between this grating and this a plurality of speculums and be used for assembling the convex lens of this optical grating reflection to the light beam of these a plurality of speculums.
4. laser resonator as claimed in claim 1 system is characterized in that: this light source comprises that one is used for conducting the waveguide of the light that this light source produces, and this waveguide has one first end face and one second end face.
5. laser resonator as claimed in claim 4 system, it is characterized in that: the path of this waveguide is a curved path.
6. laser resonator as claimed in claim 4 system is characterized in that: first end face of this waveguide comprises that one is used for avoiding directly being returned by this first end face reflection via the light that this waveguide reaches this first end face the anti-reflecting layer of this waveguide.
7. laser resonator as claimed in claim 4 system is characterized in that: also comprise a side of being located at this waveguide and be used for assembling the collimating lens of the light that this waveguide disperses out.
8. laser resonator as claimed in claim 7 system, it is characterized in that: this collimating lens is to be located between this light source and this grating, the light-ray condensing that is used for this waveguide is dispersed out is to this grating.
9. laser resonator as claimed in claim 7 system, it is characterized in that: this collimating lens is a side of being located at second end face of this waveguide, is used for assembling the light of exporting this light source.
10. laser resonator as claimed in claim 9 system is characterized in that: the light that this collimating lens is assembled is laser.
11. laser resonator as claimed in claim 1 system, it is characterized in that: this light source is to be the semiconductor optical amplifier.
12. laser resonator as claimed in claim 1 system, it is characterized in that: this light source is to be a multiple quantum well semiconductor laser.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02130279 CN1215621C (en) | 2002-08-22 | 2002-08-22 | Resonant cavity system of adjustable multi-wavelength semiconductor laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02130279 CN1215621C (en) | 2002-08-22 | 2002-08-22 | Resonant cavity system of adjustable multi-wavelength semiconductor laser |
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| CN1477742A true CN1477742A (en) | 2004-02-25 |
| CN1215621C CN1215621C (en) | 2005-08-17 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7142569B2 (en) | 2003-06-30 | 2006-11-28 | Delta Electronics, Inc. | Tunable laser source and wavelength selection method thereof |
| CN100429554C (en) * | 2004-03-04 | 2008-10-29 | 华新丽华股份有限公司 | Outer cavity type tunable laser system of micro ectromechanic component array of corner prism surface |
-
2002
- 2002-08-22 CN CN 02130279 patent/CN1215621C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7142569B2 (en) | 2003-06-30 | 2006-11-28 | Delta Electronics, Inc. | Tunable laser source and wavelength selection method thereof |
| CN100429554C (en) * | 2004-03-04 | 2008-10-29 | 华新丽华股份有限公司 | Outer cavity type tunable laser system of micro ectromechanic component array of corner prism surface |
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| Publication number | Publication date |
|---|---|
| CN1215621C (en) | 2005-08-17 |
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