CN1474954A - Light modulation device and system - Google Patents

Light modulation device and system Download PDF

Info

Publication number
CN1474954A
CN1474954A CNA018188109A CN01818810A CN1474954A CN 1474954 A CN1474954 A CN 1474954A CN A018188109 A CNA018188109 A CN A018188109A CN 01818810 A CN01818810 A CN 01818810A CN 1474954 A CN1474954 A CN 1474954A
Authority
CN
China
Prior art keywords
elastic component
electrode
electrodes
catoptron
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA018188109A
Other languages
Chinese (zh)
Inventor
梅文惠
钱劲风
席东云
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ball Semiconductor Inc
Original Assignee
Ball Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/718,619 external-priority patent/US6433917B1/en
Priority claimed from US09/728,691 external-priority patent/US6512625B2/en
Application filed by Ball Semiconductor Inc filed Critical Ball Semiconductor Inc
Publication of CN1474954A publication Critical patent/CN1474954A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/35—Optical coupling means having switching means
    • G02B6/351—Optical coupling means having switching means involving stationary waveguides with moving interposed optical elements
    • G02B6/3512—Optical coupling means having switching means involving stationary waveguides with moving interposed optical elements the optical element being reflective, e.g. mirror
    • G02B6/3518—Optical coupling means having switching means involving stationary waveguides with moving interposed optical elements the optical element being reflective, e.g. mirror the reflective optical element being an intrinsic part of a MEMS device, i.e. fabricated together with the MEMS device
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70375—Multiphoton lithography or multiphoton photopolymerization; Imaging systems comprising means for converting one type of radiation into another type of radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/35—Optical coupling means having switching means
    • G02B6/354—Switching arrangements, i.e. number of input/output ports and interconnection types
    • G02B6/3544—2D constellations, i.e. with switching elements and switched beams located in a plane
    • G02B6/3546—NxM switch, i.e. a regular array of switches elements of matrix type constellation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/35—Optical coupling means having switching means
    • G02B6/3564—Mechanical details of the actuation mechanism associated with the moving element or mounting mechanism details
    • G02B6/3568—Mechanical details of the actuation mechanism associated with the moving element or mounting mechanism details characterised by the actuating force
    • G02B6/357—Electrostatic force
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/35—Optical coupling means having switching means
    • G02B6/3564—Mechanical details of the actuation mechanism associated with the moving element or mounting mechanism details
    • G02B6/3582—Housing means or package or arranging details of the switching elements, e.g. for thermal isolation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/35—Optical coupling means having switching means
    • G02B6/3564—Mechanical details of the actuation mechanism associated with the moving element or mounting mechanism details
    • G02B6/3584—Mechanical details of the actuation mechanism associated with the moving element or mounting mechanism details constructional details of an associated actuator having a MEMS construction, i.e. constructed using semiconductor technology such as etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)

Abstract

A light modulation element, device, and system (10) is discussed. The light modulation element includes three electrodes (14, 16, 26), a rigid member (20), and a mirror (22). The rigid member (20) is connected between the three electrodes (14, 16, 26) so that the first and second electrodes (14, 16) are on one side and the third electrode (26) is on the opposite side of the rigid member (20). The mirror (22) is attached to the rigid member (20) so that it can move therewith. The rigid member (20) moves responsive to an external electrostatic force provided by one or more of the three electrodes so that the mirror (22) is positioned in a predetermined position responsive to the state of the rigid member (20).

Description

Optic modulating device and system
Technical field
The present invention relates generally to optical devices and optical system, and relate in particular to a kind of device that is used for modulated beam of light intensity and projector/exposure system of using a kind of like this device.
An aspect of the modulated beam of light for example amplitude of light or the device of phase place has obtained extensive application.In optical modulation was used, phase modulation (PM) was more important than which amplitude modulation usually.In addition, phasing device can be carried out which amplitude modulation usually, and application flexibility is provided thus.A kind of quick, reliable, lasting, effective optic modulating device need be provided, and both can be used for complicated applications, can be used for simple application again.
Summary of the invention
A kind of optical element of new uniqueness provides technical progress.In one embodiment, this optical element comprises three electrodes, a supporting construction, an elastic component and a catoptron.This elastic component is connected to supporting construction, and the one or more electrostatic force that provide of its response by three electrodes are provided.This elastic component is arranged in a gap, makes it can respond this electrostatic force, moves between first and second state.Catoptron also is attached on this elastic component, and it is also moved between first and second state.
In another embodiment, this optical element comprises near first, second and the third electrode that is positioned at the substrate, and each electrode can produce a power.Two supporting members also are connected to this substrate, and an elastic component extends above these three electrodes across therebetween, and can move between first and second state.With the same among the previous embodiment, a catoptron is connected to this elastic component and extension above it.
In another embodiment, this optical element comprises first, second and third electrode, is respectively applied for first, second and the 3rd power of producing.An elastic component of a power of response is connected to a supporting construction.A catoptron further is attached on this elastic component.In the work, this elastic component, and therefore this catoptron respond the various combinations of first, second and the 3rd power, change between different conditions.
In another embodiment, this optical element comprises and is connected to two electrodes that this substrate is used to produce electrostatic force, and an elastic component that is suspended in two electrodes tops.Also comprise an actuator and a third electrode, this actuator and elastic component are adjacent.Two electrodes at first are positioned, and add thereon sustaining voltage with response, make elastic component remain on standing state, and actuator is positioned, with mobile elastic component between two duties selectively.
Description of drawings
Fig. 1,4 and 9 is the sectional views according to several different embodiment of optical modulation element of the present invention.
The different conditions of the optical modulation element of Fig. 2-3 key diagram 1.
Another state of the optical modulation element of Fig. 5 key diagram 4.
Fig. 6-the 7th, the exploded view of the optical modulation element of Fig. 4.
Fig. 8 is a curve map, the work of the optical modulation element of key diagram 4.
Another state of the optical modulation element of Figure 10 key diagram 9.
Figure 11 is the exploded view of the optical modulation element of Fig. 9.
Figure 12-the 16th, according to the isometric drawing of an embodiment of several optical modulation elements of the present invention, this optical modulation element is the part of single micro-reflector optic modulating device.
Figure 17-18 is cut-open views of the different embodiment of an optical projection system, utilizes the described one or more optic modulating devices of Figure 12-16.
Embodiment
The disclosure relates to the optical devices and the optical system that for example can be used for various application.However, it should be understood that following discloses provide many different embodiment or example, be used for realizing different characteristic of the present invention in application-specific.Certainly, these embodiment only are examples, do not attempt the present invention described in claims is limited.
The disclosure is divided into five different chapters and sections.First segment is described an element that is used for light phase modulation.Second joint is described a light phase modulation device that comprises several these elements.The 3rd joint is described the different application of this light phase modulation device.The 4th joint is described the embodiment and the various application thereof of an oblique light modulating device.The 5th joint is described the some of them advantage of aforementioned components, device and application as end.
The light phase modulation element
With reference to figure 1, the assembly layout of an embodiment of display light modulator element 10.In the present embodiment, optical modulation element 10 constituted on the semiconductor-based end 12.Two electrodes 14,16 form near substrate 12.In the present embodiment, each electrode is for example solid film of metal of conductive material.Electrode 14,16 is between nonconducting supporting construction 18.These supporting construction 18 protections also respond the flexible spring-like member 20 of electrostatic field.This elastic component 20 further is connected to catoptron 22 by a coupling part 24.According to the purposes (for example infrared, X ray) of optical modulation element 10, this catoptron can be by many dissimilar reflecting materials, and for example gold, aluminium, copper or its compound are made.Supporting construction 18 is also protected third electrode 26.
Optical modulation element 10 is a kind of micro electronmechanical (MEM) devices, and therefore has some gap areas to allow machinery mobile.First area 30 is limited between electrode 14,16 and the elastic component 20.Second area 32 is limited between elastic component 20 and the third electrode 26.The 3rd zone 34 is limited between third electrode 26 and the catoptron 22.Many different disposal routes are arranged to constitute various gap areas 30,32,34.For example, can in these zones, make a sacrifice layer, remove by suitable vapor etch after a while then.
As shown in Figure 1, have apart from d1 between the elastic component 20 and second electrode 16; Have apart from d2 between elastic component 20 and the third electrode 26; And have apart from d3 between third electrode 26 and the catoptron 22.Though according to (for example elastic component 20) employed different materials or other factors, can change apart from d1, d2, d3, in the present embodiment, these distances are limited by following equation (1) and (2):
d1，d3＞＞d2?????????????????????????(1)
d3～d1???????????????????????????????(2)
Following will the description in more detail, in some applications, apart from d1, d2, d3 with relevant with the light wavelength λ of catoptron 22 reflections.For example, the wavelength X of light source can be 400 nanometers (nm).In this example, can equal 100nm apart from d1, d2, can be about 5～10nm apart from d2.
Also with reference to figure 2 and 3, optical modulation element 10 can be in three kinds of different machine performances.Fig. 1 illustrates a kind of " freedom " state, wherein elastic component 20 is in a kind of natural non-case of bending.As shown in Figure 1, less apart from d2, and bigger apart from d1, d3.
Fig. 2 illustrates a kind of " top " state, wherein elastic component 20 is bent upwards, as shown in the figure, and away from substrate 12.As shown in Figure 2, be approximately equal to zero apart from d2, and apart from d1, d3 greater than the value under the free state.In many application, the difference between top state and the free state can be considered as and can ignore.
Fig. 3 illustrates a kind of " bottom " state, wherein elastic component 20 is bent downwardly, as shown in the figure, and near substrate 12.As shown in Figure 3, be approximately equal to zero apart from d1, d3, and bigger now apart from d2.
These three states, free state, top state and lower state limit by added electrostatic force between three electrodes 14,16,26 and/or the elastic component 20.In the present embodiment, elastic component 20 is in first voltage, and electrode 14,16,26 can replace between first voltage and second voltage selectively.For reference, first voltage will be ground, represent with binary zero, and second voltage will be represented a positive voltage, represent with binary one.In addition, in the present example, positive voltage 1 will have electrostatic attraction to a part that is in ground voltage 0.The various combinations that however, it should be understood that different voltages can produce different effects, so the present invention selects helpful for many different designs that those those of ordinary skill fully understand.
Optical modulation element 10 can also be in a kind of " maintenance " state.Hold mode is kept the standing state of element 10, even electrode voltage changes.Statement simply, hold mode is as a storer of element 10.Hold mode will go through following.
Optical modulation element 10 can be operated in the many different configurations of electrode 14,16,26.With reference now to table 1,, in a kind of configuration, each electrode 14,16,26 can separate work.
Table 1
Electrode 14 Electrode 16 Electrode 26 State
??0 ??0 ??0 Free
??0 ??0 ??1 Top
??0 ??1 ??0 The bottom
??0 ??1 ??1 Keep
??1 ??0 ??0 The bottom
??1 ??0 ??1 Keep
??1 ??1 ??0 The bottom
??1 ??1 ??1 Keep
With reference to figure 1-3, consider for electrode 14 and 16 be 1 and optical modulation element 10 be in the example of lower state at present, mean lessly apart from d3, and catoptron 22 is in lower position.Then, electrode 26 switches to 1.According to table 1, optical modulation element 10 will be in hold mode.In the present example, hold mode is with " maintenance " previous state, so catoptron 22 rests on lower state.Then, electrode 26 switches to 0.According to table 1, optical modulation element 10 will be in hold mode.This means and continue the previous lower state of maintenance.Therefore, as long as electrode 14 and 26 rests on 1, just will keep lower state.Can show the many different situation that keeps free state or top state.
By the intensity of control by electrode 14,16 and/or 26 electrostatic fields that produce, optical modulation element 10 can keep certain state.In the present embodiment, the intensity that influences the electrostatic field of elastic component 20 is controlled by distance d1, d2 and/or d3.In other embodiments, can control the intensity of electric field in many different modes.For example, size that can be by electrode 14,16 and/or 26, be used to constitute each electrode material, be added to voltage and/or any intermediate structure on each electrode, the intensity of the electrostatic field that control is corresponding.
With reference now to table 2,, electrode 16 can also be as an edge-triggered device input.For example, if electrode 14 is 0 and electrode 16 and 26 is 1, then optical modulation element 10 will be in hold mode.But if electrode 16 switches to 0, then optical modulation element 10 will switch to the top state.If electrode 16 switches back 1, then optical modulation element 10 will remain on the top state.Therefore, after each change of electrode 16, optical modulation element all will be in the top state.For lower state and hold mode, work in a similar fashion.
Table 2
Electrode 14 Electrode 16 Electrode 26 State
??0 Change ??1 Top
??1 Change ??0 The bottom
??1 Change ??1 Keep
??0 ??1 ??0 The bottom
??0 ??0 ??0 Free
With reference now to table 3,, in another kind configuration, electrode 14 and 26 links together, and electrode 16 can be independent of other two electrodes and works.As seen by last two row of table 3, when electrode 14 and 26 all has 1 voltage, the voltage of pipe electrode 16 not, optical modulation element 10 all is in hold mode.Therefore, electrode 14,26 is together as one " maintenance electrode ", optical modulation element 10 is in or breaks away from hold mode.When optical modulation element was not in hold mode, electrode 16 was as one " data electrode ", and free state corresponding 0 is worth, corresponding 1 value of lower state.
Table 3
Electrode 14,26 Electrode 16 State
??0 ??0 Free
??0 ??1 The bottom
??1 ??0 Keep
??1 ??1 Keep
With reference now to Fig. 4,, the assembly layout of another embodiment of display light modulator element 60.Can number jointly with the assembly of the assembly similar elements 60 of element 10 (Fig. 1).In the present embodiment, optical modulation element 60 constituted on the semiconductor-based end 12.Three electrodes 62,64,66 form near substrate 12, although different embodiment can comprise that an insulating material (not shown) is to help electrical isolation.In the present embodiment, each electrode is for example solid film of metal of conductive material.Electrode 62-66 is between nonconducting supporting construction 68.The flexible spring-like member 70 of supporting construction 68 protections.This elastic component 70 is non-linear, and promptly it has any the trend enter in two states that ejects, as will be described in detail.Elastic component 70 further is connected to catoptron 22 by a coupling part 24.According to the purposes (for example infrared, X ray) of optical modulation element 60, this catoptron can be by many dissimilar reflecting materials, and for example gold, aluminium, copper or its compound are made.
Optical modulation element 60 also is a kind of MEM device, and therefore has some gap areas to allow machinery mobile.First area 72 is limited between three electrode 62-66 and the elastic component 70.Second area 74 is limited between elastic component 70 and the catoptron 22.
As shown in Figure 4, have apart from d4 between elastic component 70 and the electrode 62-66.For example, can be considered as similar with Fig. 1 apart from d4 apart from d1.
Optical modulation element 60 can be in two kinds of different machine performances.Fig. 4 illustrates a kind of free state, and wherein elastic component 70 is in a kind of natural non-case of bending.As shown in Figure 4, bigger apart from d4.In the present embodiment, free state also is regarded as the top state.
Fig. 5 illustrates a kind of lower state, and wherein elastic component 70 is bent downwardly, as shown in the figure, and near substrate 12.As shown in Figure 5, be approximately equal to zero apart from d4.
Also with reference to figure 6 and 7, elastic component 70 comprises two different sub-components.Have a plurality of elastic rod 70a, each is connected to one of them supporting construction 68.Elastic rod 70a engages at middle body 70b place, further is connected to catoptron 22 by coupling part 24.Middle body 70b is made by the material of the electrostatic field that the one or more electrode 62-66 of response produce.In the present embodiment, elastic rod 70a and middle body 70b are used to provide a nonlinear elasticity sexual act (ejection).Therefore, elastic component 70, and therefore catoptron 22 eject between two states, shown in arrow 72.Should understand elastic rod 70a, middle body 70b and/or supporting construction 68 has many kind configurations all will support the nonlinear elasticity sexual act.
With particular reference to Fig. 6, first electrode 62 has area A 1, the second electrode 64 and have area A 2 below middle body below middle body 70b, and third electrode 66 has area A 3 below middle body.In the present embodiment, these areas satisfy:
A1-A2＝A3?????????????????????(3)
By selecting area A 1, A2, A3, can control the size of the electrostatic force that produces by each electrode 62-66.In other embodiments, can pass through the alternate manner for example voltage levvl or the material composition control electrostatic force of each electrode.Equally in other embodiments, may need to make different electrostatic force relevant with each electrode.
With reference to figure 8, curve Figure 76 illustrates the work of optical modulation element 60.Z-axis is indicated " displacement ", shows the middle body 70b of elastic component 70 and the therefore position of catoptron 22.Transverse axis is indicated " electrostatic potential ", shows the magnitude of voltage of three electrode 62-66.Curve Figure 76 comprises two curve 78d, 78u.Curve 78d represents moving downward of elastic component 70.Curve 78u represents moving upward of elastic component.Therefore, the work of curve 78u, 78d explanation elastic component 70 lags behind.In certain embodiments, the lower state of elastic component 70 can be described in detail about Figure 10 as following by a mechanical brake control.
Consider that for example electrode 62,64,66 can provide voltage V1, V2, V3 respectively.In this example, first electrode 62 (having voltage V1) is as a data electrode, and second electrode 64 (having voltage V2) is as one " float electrode ", and third electrode 66 (having voltage V3) is as one " locking/reset electrode ".Value V TH1Be a threshold voltage, have enough electrostatic force to make elastic component 70 be ejected into lower state (Fig. 5) herein from top state (Fig. 4).Value V TH2Be a threshold voltage, have enough electrostatic force to make elastic component 70 discharge (or " bounce-back ") herein and get back to the top state from lower state.In the present embodiment, voltage V1, V2, V TH1, V TH2With total voltage V TOTLimit by following relational expression:
V TOT＝V1+V2+V3?????????????????(4)
V TH1＞(V3+V2)??????????????????(5)
V TH1＞(V3+V1)??????????????????(6)
V TH2＜V3???????????????????????(7)
V2～V1??????????????????????????(8)
Optical modulation element 60 can be in the many different configurations that are operated in electrode 62-66.With reference now to table 4,, in a kind of configuration, each electrode 62-66 can separate work.Table 4 utilizes above-mentioned 0/1 voltage mark, and 0 voltage mark is represented no-voltage, and 1 voltage mark is represented as above definite V1, V2 or V3.
Table 4
Electrode 62 (V1) Electrode 64 (V2) Electrode 66 (V3) State Work
??0 ??0 ??0 Free Reset
??0 ??0 ??1 Standing state The locking standing state
??0 ??1 ??0 Inapplicable Inapplicable
??0 ??1 ??1 Free Movable
??1 ??0 ??0 Inapplicable Inapplicable
??1 ??0 ??1 Standing state The locking standing state
??1 ??1 ??0 Inapplicable Inapplicable
??1 ??1 ??1 The bottom Movable
Annotate: some voltage combinations are not used in the present embodiment, therefore indicate " inapplicable ".
Two kinds of distinct work are supported in the work of table 4: write the data value from first electrode 62, and keep the data value before write.In order to write on the element 60, be zero at first by all three electrode 62-66 are set, this element resets.When element 60 resetted, it was in freedom or top state.Then, third electrode 66 is set to 1 (locking this element thus) and second electrode 64 is set to 1 (activating this element thus).At this moment, element 60 will respond the data (0 or 1) from first electrode 62.
For the data value (making element 60 no longer respond the data in first electrode) that keeps before having write, third electrode 66 is set to 1 and second electrode 64 and is set to 0.At this moment, element 60 no longer responds the data in first electrode 62, and the state of this element will remain unchanged.
Therefore, third electrode 66 remains locking (being set to 1), removes negator 60 and is reset.Second electrode 64 is movable (being set to 1) when needing element 60 response from the data of first electrode 62, and is inactive (being set to 0) when not needing this element responds from the data of first electrode.
With reference now to Fig. 9,, the assembly layout of another embodiment of display light modulator element 80.Can number jointly with the assembly of the assembly similar elements 80 of element 10 (Fig. 1) and 60 (Fig. 4).In the present embodiment, optical modulation element 80 constituted on the semiconductor-based end 12.Two electrodes 82,84 form near substrate 12.In the present embodiment, each electrode the 82, the 84th, conductive material is the solid film of metal for example.Electrode 82-84 is between nonconducting supporting construction 86.Supporting construction 86 protection elastic components 88.Elastic component 88 further is connected to catoptron 22 by a coupling part 24.
Optical modulation element 80 also is a kind of MEM device, and therefore also has some gap areas to allow machinery mobile.First area 90 is limited between two electrode 82-84 and the elastic component 88.Second area 92 is limited between elastic component 88 and the catoptron 22.With the same in the element 60 of Fig. 4, have apart from d4 between elastic component 88 and the electrode 82-84.In certain embodiments, nonconducting brake gear 93 can be attached on the electrode 82-84.Brake gear 93 is used to limit moving of elastic component 88, and prevents contacting between electrode 82 and the elastic component.
Third electrode 94 extends above elastic component 88.Do not resemble the element 100 of Fig. 1, third electrode 94 separates by insulation course 96 and elastic component 88.Insulation course 96 can be used as electrical insulator and/or heat insulator with the need.In certain embodiments, element 80 uses insulation course 96 everywhere.
With reference to figure 9 and 10, actuator 98 is positioned near the elastic component 88 and near the third electrode 94.Actuator 98 can make optical modulation element 80 be in two different states: freedom and bottom.Fig. 9 illustrates free state, and wherein elastic component 88 is in a kind of natural non-case of bending.As shown in Figure 9, bigger apart from d4.In the present embodiment, free state also is regarded as the top state.Figure 10 illustrates lower state, and wherein elastic component 88 is bent downwardly, as shown in the figure, and near substrate 12.As shown in figure 10, be approximately equal to zero apart from d4.
Actuator 98 is triggered by third electrode 94.In one embodiment, actuator 98 is the pzt thin film micro-actuator.PZT actuator 98 utilizes piezoelectric effect to make elastic component 88 move to lower state.In another embodiment, actuator 98 is pattern of fever or " thermoelectricity " actuator.Thermoelectric actuator 98 utilizes the thermal expansion of film to make elastic component 88 move to lower state.Therefore, the voltage/current signals on the response third electrode 94, actuator 98 (piezoelectricity or thermoelectricity) changes between two states shown in Fig. 9 and 10.
Also with reference to Figure 11, elastic component 88 comprises two different sub-components.Have a plurality of elastic rod 88a, each is connected to one of them supporting construction 68.Elastic rod 88a engages at middle body 88b place, further is connected to catoptron 22 by coupling part 24.Each elastic rod comprises insulation course 96, actuator 98 and third electrode 94.Middle body 88b is made by the material of the electrostatic field that the one or more electrode 82-84 of response produce.In the present embodiment, elastic rod 88a responsive actuation device 98 and moving, and middle body 88b is moved between top (freedom) and lower state.Should understand elastic rod 88a, middle body 88b and/or supporting construction 86 has many kind configurations all will support above-mentioned action.
Optical modulation element 80 can be operated in the many different configurations of electrode 82,84,94.With reference now to table 5,, in a kind of configuration, each electrode 82,84,94 can separate work.
Table 5
Electrode 94 Electrode 84 Electrode 82 State
??0 ??0 ??0 Free
??0 ??0 ??1 Top
??0 ??1 ??0 The bottom
??0 ??1 ??1 Keep
??1 ??0 ??0 The bottom
??1 ??0 ??1 Keep
??1 ??1 ??0 The bottom
??1 ??1 ??1 Keep
In this configuration, element 80 similar reference table 1 described element 10 work.But, should notice that for element 80 the top state is identical with free state.
With reference now to table 6,, in another kind configuration, electrode 82 and 94 links together, and electrode 84 can be independent of other two electrodes and works.As seen by last two row of table 6, when electrode 82 and 94 all has 1 voltage, the voltage of pipe electrode 84 not, optical modulation element 80 all is in hold mode.Therefore, electrode 82,94 is regarded as one together and keeps electrode, optical modulation element 80 is in or breaks away from hold mode.When optical modulation element was not in hold mode, electrode 84 was as a data electrode, and free state corresponding 0 is worth, corresponding 1 value of lower state.
Table 6
Electrode 82,94 Electrode 84 State
??0 ??0 Free
??0 ??1 The bottom
??1 ??0 Keep
??1 ??1 Keep
Therefore, optical modulation element 10,60 can be carried out in many different modes with 80, and can make up to adapt to different application, and some of them are applied in following discussion.
The light phase modulation device
With reference now to Figure 12,, a plurality of optical modulation elements can be configured to an array in single monolithic integrated circuit substrate 90, to produce a micro-reflector optic modulating device 92.Any above-mentioned optical modulation element can be used with combination in any.But for example, 20 optical modulation elements 10 are arranged in the array of five-element R (0), R (1), R (2), R (3), R (4) and four row C (0), C (1), C (2), C (3).Can utilize conventional SRAM, DRAM and DMD data and addressing scheme to realize the array that these are bigger, this will be obvious for those those of ordinary skill.For example, independent row and row address can be re-used, as used in many DRAM structures.Equally, can utilize a clock or latch signal to make work synchronous.
In the present example, the optical modulation element 10 of optic modulating device 92 is as configuration as described in the above table 3.Definitely, first of each optical modulation element 10 and third electrode 14,26 be electrically connected to form one and kept electrode.In addition, all data electrodes 16 of the optical modulation element on the common row are electrically connected.The data electrode of row R (0)-R (4) is connected respectively to data line D (0)-D (4).Data line D (0..4) further is connected to the data input of device 92, as needs any intermediate circuit (for example register or impact damper) can be arranged.Similarly, all of the optical modulation element on the common column keep electrode 14,26 to be electrically connected.The maintenance electrode of row C (0)-C (3) is connected respectively to retention wire H (0)-H (3).Retention wire H (0..3) further is connected to the address decoder of device 92, can further be connected to address input and adjunct circuit as needs.
Figure 12-16 explanation is used for controlling respectively the order of work of each optical modulation element 10 of optic modulating device 92.If should understand with the described element of Fig. 9 80 and constitute optic modulating devices 92, then work with following basic identical.If constitute optic modulating device 92 with the described element 60 of Fig. 4, provide signal additional and/or modification with needs, as above reference table 4 is described.
In Figure 12, retention wire H (0) does not conclude (being set to 0 in the present embodiment) and data value
D(0..4)＝10110
Be provided for device 92.Retention wire H (0) is concluded (being set to 1) then.Therefore, the state of the optical modulation element 10 of row C (0) is as shown in table 7 below.The voltage levvl of remaining retention wire H (1..3) is " arbitrarily " in the present example, and can be different values according to different realizations.
Table 7
OK Row State
??R(0) ??C(0) The bottom
??R(1) ??C(0) Free
??R(2) ??C(0) The bottom
??R(3) ??C(0) The bottom
??R(4) ??C(0) Free
??R(0..4) ??C(1..3) Arbitrarily
Then, in Figure 13, retention wire H (1) does not conclude (retention wire H (0) keeps concluding) and data value
D(0..4)＝01101
Be provided for device 92.Retention wire H (1) is concluded (retention wire H (0) keeps concluding) then.Therefore, the state of the optical modulation element 10 of row C (0..1) is as shown in table 8 below.
Table 8
OK Row State
??R(0) ??C(0) The bottom
??R(1) ??C(0) Free
??R(2) ??C(0) The bottom
??R(3) ??C(0) The bottom
??R(4) ??C(0) Free
??R(0) ??C(1) Free
??R(1) ??C(1) The bottom
??R(2) ??C(1) The bottom
??R(3) ??C(1) Free
??R(4) ??C(1) The bottom
??R(0..4) ??C(2..3) Arbitrarily
Then, in Figure 14, retention wire H (2) does not conclude (retention wire H (0..1) keeps concluding) and data value
D(0..4)＝11100
Be provided for device 92.Retention wire H (2) is concluded (retention wire H (0..1) keeps concluding) then.Therefore, the state of the optical modulation element 10 of row C (0..2) is as shown in table 9 below.
Table 9
OK Row State
??R(0) ??C(0) The bottom
??R(1) ??C(0) Free
??R(2) ??C(0) The bottom
??R(3) ??C(0) The bottom
??R(4) ??C(0) Free
??R(0) ??C(1) Free
??R(1) ??C(1) The bottom
??R(2) ??C(1) The bottom
??R(3) ??C(1) Free
??R(4) ??C(1) The bottom
??R(0) ??C(2) The bottom
??R(1) ??C(2) The bottom
??R(2) ??C(2) The bottom
??R(3) ??C(2) Free
??R(4) ??C(2) Free
??R(0..4) ??C(3) Arbitrarily
Then, in Figure 15, retention wire H (3) does not conclude (retention wire H (0..2) keeps concluding) and data value
D(0..4)＝01010
Be provided for device 92.Retention wire H (3) is concluded (retention wire H (0..2) keeps concluding) then.Therefore, the state of all optical modulation elements 10 of device 92 is as shown in table 10 below.
Table 10
OK Row State
??R(0) ??C(0) The bottom
??R(1) ??C(0) Free
??R(2) ??C(0) The bottom
??R(3) ??C(0) The bottom
??R(4) ??C(0) Free
??R(0) ??C(1) Free
??R(1) ??C(1) The bottom
??R(2) ??C(1) The bottom
??R(3) ??C(1) Free
??R(4) ??C(1) The bottom
??R(0) ??C(2) The bottom
??R(1) ??C(2) The bottom
??R(2) ??C(2) The bottom
??R(3) ??C(2) Free
??R(4) ??C(2) Free
??R(0) ??C(2) Free
??R(1) ??C(2) The bottom
??R(2) ??C(2) Free
??R(3) ??C(2) The bottom
??R(4) ??C(2) Free
Then, in Figure 16, retention wire H (0) does not conclude (retention wire H (1..3) keeps concluding) and data value
D(0..4)＝01001
Be provided for device 92.Retention wire H (0) is concluded (retention wire H (1..3) keeps concluding) then.Therefore, the state of all optical modulation elements 10 of device 92 is as shown in table 11 below.
Table 11
OK Row State
??R(0) ??C(0) Free
??R(1) ??C(0) The bottom
??R(2) ??C(0) Free
??R(3) ??C(0) Free
??R(4) ??C(0) The bottom
??R(0) ??C(1) Free
??R(1) ??C(1) The bottom
??R(2) ??C(1) The bottom
??R(3) ??C(1) Free
??R(4) ??C(1) The bottom
??R(0) ??C(2) The bottom
??R(1) ??C(2) The bottom
??R(2) ??C(2) The bottom
??R(3) ??C(2) Free
??R(4) ??C(2) Free
??R(0) ??C(2) Free
??R(1) ??C(2) The bottom
??R(2) ??C(2) Free
??R(3) ??C(2) The bottom
??R(4) ??C(2) Free
Therefore, under the situation of not using any annex memory, optic modulating device 92 is addressing and storage data in each element 10 easily.And, should understand and can constitute different optic modulating devices, for example utilize the optic modulating device of the work of above table 1 and 2 described optical elements 10.
Light phase modulation is used
Optical modulation element 10,60,80 can be used for many different application with optic modulating device 92.These elements are all fine for short wave applications and high light intensity effect, and for example U.S. Patent number 5,986, described in 795, are incorporated herein by reference.For example, optic modulating device 92 is all fine for wavelength 100nm or following extreme ultraviolet (or " EUV ") photoetching and grenz ray effect.In these were used, catoptron 22 can constitute with reflection multilayer coating, includes but not limited to the alternative coating of molybdenum and silicon, and for example U.S. Patent number 6,110, described in 607, are incorporated herein by reference.
Optical modulation element 10,60,80 and optic modulating device 92 also can be used as optical communication apparatus.For example, can control each light beam and be used for dense wave division multipurpose (" DWDM ").And these elements and device can be used for optical add-drop module (" OADM ").In addition, these elements and device can be used for color digital display or the like.
With reference now to Figure 17,, can use the part of optic modulating device 92 as a projecting apparatus system 100.This projecting apparatus system 100 also comprises light source 102, beam splitter 104, catoptron 106 and lens combination 108, is used to project image onto surface 110.Limit from the image of projecting apparatus system 100 a plurality of pixels by the quantity (or its multiple) of the optical modulation element 10 on the corresponding optic modulating device 92.
Light source 102 can produce relevant or incoherent light.Use more cheap incoherent light source to be of value to some application.In the present example, light source 102 produces the light of wavelength X.In addition, the distance that device each catoptron 22 of 92 can mobile λ/4 between free state and lower state.Lens combination 108 is expressed as single lens, it should be understood that to use various combinations to satisfy various design alternatives.
Beam splitter 104 comprises the reflecting surface 112 between two transparent prism 114,116.In the present embodiment, reflecting surface 112 is 50/50 spectroscope, because allow the light intensity of half directly to pass through this reflecting surface, second half reflects on this reflecting surface simultaneously.In certain embodiments, this reflecting surface can be a dichronic mirror, has the different reflection of response lambda1-wavelength and/or passes through characteristic.Equally in the present embodiment, catoptron 106 can reflect 100% incident light.It should be understood that different application can utilize different catoptrons, beam splitter or other like parts.
In one embodiment, beam splitter 104 is also with optic modulating device 92 and catoptron 106 location, makes from catoptron 106 to reflecting surface any vertical range on 112 equal the vertical range from the catoptron 22 (being in free state) of a corresponding optical modulation element 10 to same point.When this correspondence optical modulation element is in free state, determine this vertical range.Should understand in other embodiments, can work as and determine this vertical range when this optical modulation element is in a different conditions.In these other embodiment, therefore following logic will need to change.Should be further understood that in additional embodiment (for example laser application) catoptron 22 and catoptron 106 can be different to the distance of reflecting surface.
In order to describe the work of this optical projection system 100, can trace from several light beams of light source 102.Consideration is to the light beam 120 of beam splitter 104 projections.When light beam 120 arrives reflectings surface 112, produce two separation light beam 120.1,120.2 (each be light beam 120 intensity 50%).Light beam 120.1 reflects on reflecting surface 112, and arrives the catoptron 22a of optical modulation element 10a.In this example, optical modulation element 10a is in free state.Light beam 120.1 reflected back reflectings surface 112 then.Simultaneously, light beam 120.2 is by this reflecting surface, and arrival catoptron 106.Light beam 120.2 reflected back reflectings surface 112 then.
In the present example, total distance of light beam 120.1 propagation just equals total distance that light beam 120.2 is propagated.Therefore, when light beam 120.1,120.2 met once more at reflecting surface 112 places, their phase appearance added, the output beam 120.3 (being called " ON ") that has very big amplitude with generation, and with light beam 120.1 homophase just in time.Light beam 120.3 scioptics systems 108 then, and a pixel is projected to 1 P1 on surface 110.
Consider light beam 122 now to beam splitter 104 projections.When light beam 122 arrives reflectings surface 112, produce two separation light beam 122.1,122.2 (each be light beam 122 intensity 50%).Light beam 122.1 reflects on reflecting surface 112, and arrives the catoptron 22b of optical modulation element 10b.In this example, optical modulation element 10b is in lower state.Light beam 122.1 reflected back reflectings surface 112 then.Simultaneously, light beam 122.2 is by this reflecting surface, and arrival catoptron 106.Light beam 122.2 reflected back reflectings surface 112 then.
In the present example, total distance of light beam 122.1 propagation is just than the mostly individual wavelength (λ/4+ λ/4) of total distance of light beam 122.2 propagation.Therefore, when light beam 122.1,122.2 met once more at reflecting surface 112 places, their destructive interferences were to produce the output beam 122.3 (being called " OFF ") that does not almost have amplitude.Therefore, no pixel is projected to the some P2 that is determined by output beam 122.3.
With reference now to Figure 18,, two optic modulating device 92a, 92b can be as the parts of another projecting apparatus system 150.This projecting apparatus system 150 is similar with the projecting apparatus system 100 of Figure 17, the numbering unanimity of same components.But should notice that this projecting apparatus system 150 formerly comprises the second optic modulating device 92b in the place, catoptron 106 positions of system 100.
This projecting apparatus system 150 includes the additional capabilities that selectively changes from the phase place of the light of light source 102.For a further example is provided, beam splitter 104 usefulness optic modulating device 92a, 92b locate now, make from any vertical range of reflecting surface 112 to the corresponding optical modulation element of this optic modulating device, when this optical modulation element is in lower state, be the multiple (this example is opposite with the example of Figure 17) of λ/2.
Consider light beam 152 now to beam splitter 104 projections.When light beam 152 arrives reflectings surface 112, produce two separation light beam 152.1,152.2 (each be light beam 152 intensity 50%).Light beam 152.1 reflects on reflecting surface 112, and arrives the catoptron 22c of (optic modulating device 92a's) optical modulation element 10c.Light beam 152.1 reflected back reflectings surface 112 then.Simultaneously, light beam 152.2 is by this reflecting surface, and the catoptron 22d of arrival (optic modulating device 92b's) optical modulation element 10d.Light beam 152.2 reflected back reflectings surface 112 then.
In the present example, optical modulation element 10c, 10d are in identical state.Therefore, total distance of light beam 152.1 propagation is just identical with total distance of light beam 152.2 propagation.Light beam 152.1,152.2 meets once more at reflecting surface 112 places then, and here their phase appearance add, with the output beam 152.3 that is produced as ON.Light beam 152.3 scioptics systems 108 then, and a pixel is projected to 1 P3 on surface 110.
But for the different conditions of optical modulation element 10c, 10d, light beam 152.1 is different with 152.2 distances of propagating.If element 10c, 10d are in free state, to compare if then all be in lower state with optical modulation element, light beam 152.1,152.2 is all propagated half wavelength (λ/4+ λ/4) less.Therefore, when light beam 152.1,152.2 meets once more at reflecting surface 112 places, they may with incident beam 152.1 homophase just, 180 ° phase differential is perhaps arranged with this light beam.
The inclination modulator element
With reference now to Figure 19,, the assembly layout of another embodiment of display light modulator element 200.Can number jointly with the assembly of the assembly similar elements 200 of element 10 (Fig. 1).In the present embodiment, optical modulation element 200 constituted on the semiconductor-based end 12.Three electrodes 202,204,206 form near substrate 12, although different embodiment can comprise that an insulating material (not shown) is to help electrical isolation.In the present embodiment, each electrode is for example solid film of metal of conductive material.Electrode 202-206 is between nonconducting supporting construction 208.This supporting construction 208 is by torsion rod stabilizer (not shown) protection rigid member 210.Torsion rod stabilizer will be in following detailed description.Rigid member 210 further is connected to catoptron 22 by a coupling part 24.According to the purposes (for example infrared, X ray) of optical modulation element 200, this catoptron can be by many dissimilar reflecting materials, and for example gold, aluminium, copper or its compound are made.
Optical modulation element 200 also is a kind of MEM device, and therefore has some gap areas to allow machinery mobile.First area 212 is limited between three electrode 202-206 and the rigid member 210.Second area 214 is limited between rigid member 210 and the catoptron 22.As shown in Figure 4, have respectively apart from d5, d6 between rigid member 210 and the electrode 202,206.
Optical modulation element 200 can be in three kinds of different machine performances.Fig. 4 illustrates a kind of free state, and wherein rigid member 210 is parallel with substrate 12.As shown in Figure 4, relatively equate apart from d5, d6.In the present embodiment, free state also is regarded as flat state.
Figure 20 illustrates a kind of left bank state, and wherein rigid member 210 is tilted to the left, as shown in FIG..As shown in Figure 5, be approximately equal to zero apart from d5, and bigger apart from d6.Though do not show that the right bank state also is possible, be approximately equal to zero apart from d6, and bigger apart from d5.
Two different embodiment of Figure 21-23 and Figure 24-26 explanation optical modulation element 200.In the embodiment of Figure 21-23 (indicating with digital 200a), rigid member 210 rotates around the axle a1 with other assembly configured in parallel.In the embodiment of Figure 24-26 (indicating with digital 200b), rigid member 210 rotates around the axle a2 with other assembly diagonal configuration.
With reference now to Figure 21,, in element 200a, first electrode, 202 longitudinal are extended, as shown in the figure, second and third electrode 204,206 latitude directions extend across substrate 12.Electrode 202-206 comprises enough areas, attracts rigid member 210 to help electrostatic force.In other embodiments, can pass through the alternate manner for example voltage levvl or the material composition control electrostatic force of each electrode.Equally in other embodiments, may need to make different electrostatic force relevant with each electrode.
With reference to Figure 22, rigid member 210 is connected to supporting construction 208 by torsion rod stabilizer 212,214.Torsion rod stabilizer 212,214 is a spring-like device, tries hard to keep the parallel relation (Figure 19) of rigid member 210 and substrate 12.But, response external force, torsion rod stabilizer 212,214 allows rigid member 210 to tilt, shown in arrow 216,218,220.
With reference now to Figure 24,, in element 200b, first electrode 202 extends with the first direction diagonal line, as shown in the figure, second and third electrode 204,206 extend with direction diagonal line perpendicular to electrode 202.Electrode 202-206 comprises enough areas, attracts rigid member 210 to help electrostatic force.In other embodiments, can pass through the alternate manner for example voltage levvl or the material composition control electrostatic force of each electrode.Equally in other embodiments, may need to make different electrostatic force relevant with each electrode.
With reference to Figure 25, rigid member 210 is connected to supporting construction 208 by torsion rod stabilizer 222,224.Torsion rod stabilizer 222,224 is similar to the torsion rod stabilizer 212,214 of Figure 23, except their location permission diagonal line inclination is moved.
With reference now to Figure 21-26,, embodiment 200a, 200b work in a similar fashion.When one or more electrode 202-206 applied electrostatic force, rigid member 210 tilted at torsion rod stabilizer 212,214 or 222,224, and catoptron 22 is tilted.Therefore, optical modulation element 200 can be operated in many different states.With reference now to table 12,, in a kind of configuration, each electrode 202-206 can separate work.Table 12 utilizes above-mentioned 0/1 voltage mark, and 0 voltage mark is represented no-voltage, and 1 voltage mark is represented supply voltage.
Table 12
Electrode 202 Electrode 204 Electrode 206 State Work
?0 ?0 ?0 Free Reset
?0 ?0 ?1 Right bank Movable
?0 ?1 ?0 Standing state Keep
?0 ?1 ?1 Right bank Movable also maintenance
?1 ?0 ?0 Left bank Movable
?1 ?0 ?1 Standing state Keep
?1 ?1 ?0 Left bank Movable also maintenance
?1 ?1 ?1 Standing state Keep
Annotate:, then can keep current state in arbitrary obliquity if standing state is free.Equally, before getting back to no-voltage,, can carry out the work of resetting, to produce a repulsion by high positive voltage or the negative voltage of the short time on the electrode 204.
With reference now to Figure 27,, optical modulation element 200 can be used for a kind of light delivery system 250, is used for the guiding of light beam 252.The catoptron 22 of element 200 is selectively with light beam 252 guiding first direction 254 or second directions 256.For those those of ordinary skill, obviously, light delivery system 250 is more effective than conventional anamorphotic attachment.
Conclusion
Said elements, Apparatus and system provide many advantages.One, optical efficiency high (near 100%).And, there is not scan components, although system 100,150 for example can be used in the scanning photoetching system.
Another advantage is that said elements, Apparatus and system just can support different wave length from light source 102 through minor change.For example, by changing the voltage on the electrode 14,16,26, the displacement that can regulate each catoptron 22 of optical modulation element 10.And these application can be used relevant or incoherent light (time coherence or spatial coherence).
Another advantage is that optic modulating device 92 does not need independent storer.This can improve reliability (for example, memory cell may be subjected to the adverse effect of light) and can reduce manufacturing cost.
Though the present invention is shown especially with reference to its better embodiment and is described that those technician should understand the change that can carry out on various forms and the details, and without departing from the spirit and scope of the present invention.

Claims (26)

1. optical communication apparatus comprises:
First, second and third electrode are respectively applied for first, second and the 3rd power of producing;
A supporting construction;
A rigid member is connected to this supporting construction by torsion rod stabilizer, wherein power of this rigid member response;
A catoptron is attached on this rigid member; And
First gap between rigid member and three electrodes, makes rigid member to move in this gap;
Wherein this rigid member voltage that can respond on one or more electrodes tilts selectively.
2. the device of claim 1, further wherein each electrode can provide the electrostatic force of opposite polarity, makes this electrode of a kind of polarity chron attract rigid member, and this electrode repels rigid member during opposite polarity, carries out reset function thus.
3. optical modulation element comprises:
First, second and third electrode;
An elastic component is connected between these three electrodes, makes first and second electrodes be positioned at a side of this elastic component, and third electrode is positioned at the opposite side of this elastic component, and wherein this elastic component response is by one or more external force that provide of these three electrodes;
A catoptron is attached on this elastic component; And
First gap between the elastic component and first and second electrodes, makes elastic component to move between first and second states;
Wherein this catoptron responds the state of this elastic component and is positioned at a preposition.
4. the element of claim 3 further comprises:
Second gap between elastic component and third electrode, makes this elastic component can also move to the third state.
5. the element of claim 3, wherein the location of this electrode and elastic component makes when elastic component is in first state, compare with first or second electrode, the easier response third electrode of elastic component allows third electrode to make elastic component remain on first state thus.
6. the element of claim 3, a kind of natural non-case of bending of the first state representation elastic component wherein, and wherein the location of this electrode and elastic component makes when elastic component is in first state, third electrode than first or second electrode more near elastic component.
7. a device comprises a substrate and an array of light modulation elements, and each optical modulation element comprises:
First and second electrodes are positioned near this substrate;
An elastic component extends above first and second electrodes, makes this elastic component to move between first and second states;
Third electrode is positioned at this elastic component top; And
A catoptron is connected to this elastic component and extends the feasible distance of passing through the State Control catoptron of elastic component apart from substrate above it.
8. the device of claim 7, wherein each optical modulation element further comprises:
A gap, between these three electrodes, elastic component can move therein.
9. the device of claim 7, wherein three electrodes of all of each element comprise a kind of material that can influence electrostatic force, and the elastic component of each element is made by the material of this electrostatic force of response.
10. the device of claim 7, wherein element is arranged with row and column, and wherein second electrode of each element is electrically connected on the common row, a data line that is used for this units with generation, and wherein on the common column first of each element and third electrode be electrically connected, be used for a retention wire of this row element with generation.
11. the device of claim 7, wherein the location of first, second of each element and third electrode makes, when first and the third electrode that is listed as by any specific when an electrostatic force influences, the state of this elastic component is held, no matter by any electrostatic force of second electrode influence of any element in these row.
12. an optical communication apparatus comprises:
First, second and third electrode are respectively applied for first, second and the 3rd power of producing;
A supporting construction;
An elastic component is connected to this supporting construction, wherein power of this elastic component response;
A catoptron is attached on this elastic component; And
First gap between the elastic component and first and second electrodes, makes elastic component to move between first and second states;
Wherein this catoptron is positioned with the state of response elastic component.
13. the device of claim 12, wherein three electrodes are positioned at inside, first gap, and first, second and the 3rd power all are electrostatic force, and the elastic component response is from the electrostatic force of these three electrodes.
14. the device of claim 12 further comprises:
An actuator is connected to third electrode, and this actuator is used for applying a mechanical force to the elasticity catoptron.
15. the device of claim 12, wherein elastic component comprises a middle body, is used to protect catoptron, and at least one bar, is used to protect this supporting construction.
16. the device of claim 12, wherein this bar allows elastic component to eject between two states.
17. the device of claim 12 further comprises:
A detent is used to limit moving of elastic component.
18. an optical element comprises:
A substrate;
First, second and third electrode are positioned near this substrate, and can produce an electrostatic force of variable intensity;
First and second supporting members are connected to this substrate;
An elastic component across between first and second supporting members, and extends above three electrodes, and can move between first and second states; And
A catoptron is connected to this elastic component and extension above it.
19. the element of claim 18, wherein this elastic component comprises a middle body that responds electromagnetic force, and first and second bars, is used to make this middle body to be connected respectively to first and second supporting members.
20. the element of claim 19, wherein this first and second bar is can be with the non-linear spring of hysteresis mode work.
21. the element of claim 19, wherein each of these three electrodes comprises at least one part below the middle body of elastic component, and the surface area of partly each of these three electrodes relatively equates.
22. the element of claim 20, wherein these three electrodes are with respect to the middle body location of elastic component, make that this middle body will respond the electrostatic force that is produced by third electrode, move to second state from first state when wherein two electrodes produce an electrostatic force.
23. an optical element comprises:
A substrate;
First, second electrode is connected to this substrate;
An elastic component;
A structure is connected to this substrate, is used for the support elastic member and extends above first and second electrodes, makes to form a gap between the elastic component and first and second electrodes, allows elastic component to move between first and second states thus;
An actuator is positioned near this elastic component;
Third electrode is positioned near this actuator;
A catoptron extends above this elastic component; And
A connector is used to make catoptron to be connected to elastic component, makes catoptron keep parallel with substrate, and by the State Control substrate of elastic component and the distance between the catoptron;
Wherein this first and second electrode is positioned, and is added in sustaining voltage on it with response, makes elastic component remain on standing state, and
Wherein this third electrode is positioned, to activate this actuator, and mobile selectively elastic component between first and second states thus.
24. the element of claim 23, wherein this elastic component is made of a kind of material of response electromagnetic force, and first and second electrodes utilize electromagnetic force to keep this elastic component.
25. the element of claim 23, wherein this actuator is a piezoelectric micro-actuator.
26. the element of claim 23, wherein this actuator is a thermoelectric micro-actuator.
CNA018188109A 2000-11-22 2001-11-20 Light modulation device and system Pending CN1474954A (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US09/718,619 US6433917B1 (en) 2000-11-22 2000-11-22 Light modulation device and system
US09/718,619 2000-11-22
US09/728,691 US6512625B2 (en) 2000-11-22 2000-12-01 Light modulation device and system
US09/728,691 2000-12-01
US25782400P 2000-12-22 2000-12-22
US60/257,824 2000-12-22

Publications (1)

Publication Number Publication Date
CN1474954A true CN1474954A (en) 2004-02-11

Family

ID=27401079

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA018188109A Pending CN1474954A (en) 2000-11-22 2001-11-20 Light modulation device and system

Country Status (2)

Country Link
CN (1) CN1474954A (en)
WO (1) WO2002042825A1 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100394245C (en) * 2004-10-21 2008-06-11 株式会社理光 Optical deflection device and optical deflection array, optical system and image projection display apparatus using the same
CN102253486A (en) * 2011-08-05 2011-11-23 中国科学院光电技术研究所 Two-dimensional MEMS tilting mirror with freely changeable deflection axis
CN102473669A (en) * 2009-06-30 2012-05-23 Asml控股股份有限公司 Image-compensating addressable electrostatic chuck system
TWI414820B (en) * 2004-09-27 2013-11-11 Qualcomm Mems Technologies Inc Method and device for multi-state interferometric light modulation
US9001412B2 (en) 2004-09-27 2015-04-07 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
CN106054375A (en) * 2015-04-01 2016-10-26 精工爱普生株式会社 Electrooptical apparatus, production method for the electrooptical apparatus, and electronic appliance

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003266391A (en) * 2002-03-19 2003-09-24 Japan Aviation Electronics Industry Ltd Electrostatic drive device
US7110082B2 (en) * 2003-06-24 2006-09-19 Asml Holding N.V. Optical system for maskless lithography
US7414701B2 (en) 2003-10-03 2008-08-19 Asml Holding N.V. Method and systems for total focus deviation adjustments on maskless lithography systems
SG110196A1 (en) 2003-09-22 2005-04-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5640479A (en) * 1995-10-18 1997-06-17 Palomar Technologies Corporation Fiberoptic face plate stop for digital micromirror device projection system
US5771116A (en) * 1996-10-21 1998-06-23 Texas Instruments Incorporated Multiple bias level reset waveform for enhanced DMD control

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI414820B (en) * 2004-09-27 2013-11-11 Qualcomm Mems Technologies Inc Method and device for multi-state interferometric light modulation
US8970939B2 (en) 2004-09-27 2015-03-03 Qualcomm Mems Technologies, Inc. Method and device for multistate interferometric light modulation
US9001412B2 (en) 2004-09-27 2015-04-07 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
CN100394245C (en) * 2004-10-21 2008-06-11 株式会社理光 Optical deflection device and optical deflection array, optical system and image projection display apparatus using the same
CN102473669A (en) * 2009-06-30 2012-05-23 Asml控股股份有限公司 Image-compensating addressable electrostatic chuck system
CN102473669B (en) * 2009-06-30 2015-07-15 Asml控股股份有限公司 Image-compensating addressable electrostatic chuck system
CN102253486A (en) * 2011-08-05 2011-11-23 中国科学院光电技术研究所 Two-dimensional MEMS tilting mirror with freely changeable deflection axis
CN106054375A (en) * 2015-04-01 2016-10-26 精工爱普生株式会社 Electrooptical apparatus, production method for the electrooptical apparatus, and electronic appliance
CN106054375B (en) * 2015-04-01 2019-11-01 精工爱普生株式会社 Electro-optical device, the manufacturing method of electro-optical device and electronic equipment

Also Published As

Publication number Publication date
WO2002042825A1 (en) 2002-05-30

Similar Documents

Publication Publication Date Title
US7298542B2 (en) Microelectromechanical device with reset electrode
CN1232858C (en) Double substrate reflective spatial light modulator with self-limiting micro-mechanical elements
RU2153186C2 (en) Matrix of thin-film excited reflectors for optical projection systems
US7607786B2 (en) Light deflector, light deflection array, optical system, image forming device, and projection type image display apparatus
CN1701255A (en) Shape-variable mirror and light control device having the shape-variable mirror
JP2005011795A (en) Non-fixing electrostatic active form micro electric machine system switch
CN1474954A (en) Light modulation device and system
US7933060B2 (en) Three states of micro mirror device
US7835062B2 (en) Mircromirror device having a vertical hinge
JPWO2015145943A1 (en) Optical scanning device
JP6682774B2 (en) Optical deflector, optical scanning device, image forming device, image projection device, head-up display device, and radar device
JP5374860B2 (en) Microactuator and manufacturing method thereof, microactuator array, microactuator device, optical device, display device, exposure apparatus, and device manufacturing method
CN1854798A (en) Deformable mirror and optical pickup device having the same
JP2011069954A (en) Optical scanner
JP6648443B2 (en) Optical deflector, two-dimensional image display device, optical scanning device, and image forming device
US20090207474A1 (en) Micro mirror device
US7199917B2 (en) Micro-mirror element with double binge
JP2007199096A (en) Light deflector and light deflector array
WO2005022263A3 (en) Control circuit and method for forming optical images
US7755830B2 (en) Micro mirror device
JP2008112168A (en) Non-contact micro-mirror
JP2008112169A (en) Micro-mirror with hinge
JP2005215002A (en) Hinge structure
CN100343717C (en) Double-layer dielectric reflective space optical modulator with self-limiting micro-mechanical component
US20050157370A1 (en) Deformable mirror device (DMD) spatial light modulator (SLM) with dual counter-opposed deflection electrodes

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication