CN102253486A - Two-dimensional micro-electromechanical system (MEMS) tilting mirror with freely changeable deflection axis - Google Patents

Two-dimensional micro-electromechanical system (MEMS) tilting mirror with freely changeable deflection axis Download PDF

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CN102253486A
CN102253486A CN 201110224471 CN201110224471A CN102253486A CN 102253486 A CN102253486 A CN 102253486A CN 201110224471 CN201110224471 CN 201110224471 CN 201110224471 A CN201110224471 A CN 201110224471A CN 102253486 A CN102253486 A CN 102253486A
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mirror
electrode
μ
yaw axis
block
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CN 201110224471
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CN102253486B (en )
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姚军
庄须叶
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中国科学院光电技术研究所
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Abstract

The invention discloses a two-dimensional micro-electromechanical system (MEMS) tilting mirror with a freely changeable deflection axis. An upper electrode is fixed on a substrate in a single side asymmetrical mode, and the deflection axis of the two-dimensional MEMS tilting mirror is freely changed by applying the same voltage value onto a lower electrode block of the tilting mirror in differentarrangement modes or applying different voltage values onto the lower electrode block of the tilting mirror in the same arrangement mode or comprehensively using the two schemes. The tilting mirror has high flexibility, the light path conversion efficiency and quality of the tilting mirror are effectively improved, the using cost is reduced, and contribution to further application of the tilting mirror in the fields of optical communication, projection display, optical imaging, laser confocal microscope and the like is facilitated.

Description

偏转轴可自由变换的二维MEMS倾斜镜 Yaw axis can freely change two-dimensional MEMS tilt mirror

技术领域 FIELD

[0001] 本发明属于MEMS (Micro-electromechanical Systems)倾斜镜的制作领域,涉及用于光通讯、投影显示、光学成像以及激光共焦显微等领域的MEMS倾斜镜的设计制作,具体涉及一种偏转轴可以自由变换的二维MEMS倾斜镜。 [0001] The present invention belongs to the MEMS (Micro-electromechanical Systems) production areas inclined mirror relates to optical communications, projection display, and a laser confocal optical imaging design MEMS tilt mirror in the field of microsurgery and the like, particularly, to a yaw axis dimensional MEMS tilt mirror can be freely converted.

背景技术 Background technique

[0002] 光学倾斜镜在光通讯、投影显示、光学成像以及激光共焦显微系统中具有重要的应用价值。 [0002] The optical tilt mirror in the optical communication, projection display, optical imaging and laser confocal microscopy system has important application value. MEMS倾斜镜除了具备MEMS器件所共有的成本低、易于实现批量生产外,还具有动态响应快,功耗低等优点。 Low MEMS tilt mirror in addition to the MEMS device includes a shared cost, easy mass production, but also has a fast dynamic response, and low power consumption. 二维MEMS倾斜镜可在一个器件上实现两维方向的光路转换, 空间占用体积小,工作效率高。 The optical path may be implemented dimensional MEMS tilt mirror in the two dimensional direction a conversion device, small footprint, high efficiency.

[0003] 传统的二维MEMS倾斜镜的偏转轴是正交的,当转换光路有特殊性要求时,如在一个受限空间内实现非正交方向上的两光路的相互转换时,不仅需要两次高精度的镜面偏转,效率低,而且还可能因空间局限性的限制而无法完成预定目标。 When, when the optical path conversion have special requests, such as to achieve an optical path conversion on two non-orthogonal directions in a confined space [0003] The conventional two-dimensional MEMS tilt mirror is perpendicular to the yaw axis, not only two high-precision mirror deflection, low efficiency, but also because of space limitations may limit the intended target could not be completed. 若倾斜镜的偏转轴是非正交的,则镜子在实现绕其非正交轴方向上的光路转换时,偏转一次既可完成,相对效率高。 When the yaw axis is non-orthogonal tilt mirror, the mirror when the optical path to achieve the conversion about the non-orthogonal axes, a deflecting system can be implemented, a high relative efficiency. 可见在所转换光路呈非正交状态排布时,非正交二维MEMS倾斜镜具有独特的优势。 Visible in the optical path conversion state when in a non-orthogonal arrangement, the non-orthogonal two-dimensional MEMS tilt mirror has a unique advantage. 根据文献1 [庄须叶、汪为民、陶逢刚、姚军、高福华。 According to the literature 1 [Chuang Ye shall, Wang Weimin, Tao Fenggang, Yao Jun, Gao Fu Hua. 非正交二维MEMS倾斜镜的研制。 Non-orthogonal two-dimensional development of MEMS tilt mirrors. 光学精密工程,2011 (8),In I^ress]报道,作者基于硅表面加工工艺设计并制作了非正交的二维MEMS 倾斜镜,镜面可以实现绕两个非正交偏转轴的倾斜偏转,两偏转轴的夹角是145. 37°,对实现绕145. 37°轴的光路转换可以一次完成,效率高。 Precision Optical Engineering, 2011 (8), In I ^ ress] reported that the surface of the silicon process is designed and produced based on non-orthogonal two-dimensional MEMS tilt mirror, the mirror may be achieved non-tilted about two orthogonal deflection axis of the deflection , is the angle between two yaw axis 145. 37 °, the optical path conversion achieved around the shaft 145. 37 ° may be a complete, high efficiency. 但是镜子的偏转轴固定不能移动,对于特定的需求,需要设计特定的镜子结构,使镜子的两偏转轴交成特定的角度,以使需要转换的光路恰好方便的被绕此轴旋转的镜面调制,增加了二维MEMS倾斜镜的制作成本,且由于设计和加工误差的存在,加工后的二维MEMS倾斜镜的两偏转轴夹角与设计的要求总存在一定的差别,如文献1中设计的两偏转轴的夹角角度是145°,但实际角度是145. 37°,造成倾斜镜对光路调制质量的下降。 However, the mirror rotating axis is fixed can not be moved, for specific requirements, the need to design a particular mirror configuration, the mirror of the two yaw axis cross to a specific angle, so that the light path to be converted exactly Conveniently around the mirror modulation of this axis of rotation , increasing the manufacturing cost MEMS tilt mirror in the two-dimensional, design and processing due to the presence of errors, two yaw axis angle and design requirements of the processed two-dimensional MEMS tilt mirror total there are some differences, designed as Document 1 angle between the two yaw axis is 145 °, the actual angle is 145. 37 °, resulting in a decline tilt mirror optical path modulation quality.

发明内容: SUMMARY:

[0004] 本发明的目的在于一种偏转轴可自由变换的二维MEMS倾斜镜,以克服公知技术中存在的不足。 [0004] The object of the present invention is a two-dimensional MEMS tilt mirror one vinylidene shaft freely converted to overcome the disadvantages of the known art present.

[0005] 为实现上述目的,本发明提供的偏转轴可自由变换的二维MEMS倾斜镜,偏转轴可以自由变换的二维MEMS倾斜镜,其上电极单边非对称的固定在基底上,通过在倾斜镜的不同排布方式的下电极块上加相同的电压值或在相同排布的下电极块上加不同的电压值,或将以上两种方案综合使用,完成二维MEMS倾斜镜的偏转轴的自由变换。 [0005] To achieve the above object, the present invention provides a yaw axis can freely change two-dimensional MEMS tilt mirror, yaw axis can freely change two-dimensional MEMS tilt mirror, on which the electrodes unilateral asymmetric immobilized on a substrate, by the same voltage value applied on the lower electrode blocks arranged in different ways in different tilt mirror or voltage value applied on the lower electrode in the same block arrangement, or to use a combination of solutions is completed MEMS tilt mirror in the two-dimensional partial free transform shaft.

[0006] 所述偏转轴可自由变换的二维MEMS倾斜镜,其下电极由多个下电极块6排列组合而成,下电极块6的个数大于2个,且每个下电极块之间留有间距。 [0006] The yaw axis can freely change two-dimensional MEMS tilt mirror, which is a combination of a plurality of lower electrodes by a lower electrode 6 arranged in blocks, the block number of the lower electrode 6 is larger than 2, and each of the electrode block spacing between left.

[0007] 所述偏转轴可自由变换的二维MEMS倾斜镜,其中,下电极块超出上电极边界的纵向距离控制在-500 μ m至500 μ m之间,超出上电极边界的横向尺寸距离控制在-500 μ m至 [0007] The two-dimensional MEMS tilt mirror bias shaft freely transform, wherein the longitudinal distance beyond the upper boundary of the lower electrode between the control electrode blocks -500 μ m to 500 μ m, exceeds the transverse dimension of the electrode boundary distance control to -500 μ m

3500 μ m之间,负号表示下电极块在上电极内部。 Between 3500 μ m, the negative sign indicates the lower internal electrode on the electrode block.

[0008] 所述偏转轴可自由变换的二维MEMS倾斜镜,其中,上电极与下电极块的距离为0.5-100 μm。 [0008] The two-dimensional MEMS tilt mirror bias shaft freely transform, wherein the upper and lower electrodes from the block of 0.5-100 μm.

[0009] 所述偏转轴可自由变换的二维MEMS倾斜镜,其中,倾斜镜的镜面纵向在上电极内的缩进距离控制在-500 μ m至500 μ m之间,倾斜镜的镜面横向在上电极内的缩进尺寸控制在-500 μ m至500 μ m之间,倾斜镜的镜面与上电极上表面的距离为0. 5-100 μ m之间,负号表示倾斜镜的镜面在上电极的外部。 Indent within [0009] MEMS tilt mirror of said partial two-dimensional transform freely rotating shaft, wherein the mirror tilt mirror in the longitudinal direction between the control electrode -500 μ m to 500 μ m, the lateral tilt mirror mirror setback dimension in the upper electrode is controlled between -500 μ m to 500 μ m, the distance between 0. 5-100 μ m and an inclined mirror on the mirror surface of the upper electrode, negative sign indicates mirror tilt mirrors the external electrodes.

[0010] 本发明通过将倾斜镜的上电极单边非对称的固定在基底上并通过对倾斜镜的下电极块进行不对称加电,实现镜子偏转轴的自由变换,并使镜面可以绕所需角度的偏转轴自由的偏转,高效可靠的实现所要求的光路转换,提高倾斜镜的光路转换效率和质量。 [0010] The present invention sided inclined upper electrode asymmetric mirror fixed to the base block and the lower electrode is inclined by asymmetric power mirrors, mirror yaw axis freedom of transformation, and the mirror can be about free yaw axis deflection angle required, efficient and reliable optical path to achieve the required conversion, improve efficiency and quality of the optical path conversion mirror tilt.

附图说明 BRIEF DESCRIPTION

[0011] 图1是本发明偏转轴可自由变换的二维MEMS倾斜镜的结构示意图。 [0011] FIG. 1 is a structural diagram of a two-dimensional MEMS present invention can freely change the yaw axis of the tilt mirror.

[0012] 图2是偏转轴可自由变换的二维MEMS倾斜镜的剖面示意图。 [0012] MEMS tilt mirror in the two-dimensional cross-sectional view of FIG. 2 is a partial schematic view of the shaft can be freely converted.

[0013] 图3是偏转轴可自由变换的二维MEMS倾斜镜的俯视图。 [0013] FIG. 3 is a plan view of a two-dimensional MEMS yaw axis can freely change the inclination of the mirror.

[0014] 图4是偏转轴可自由变换的二维MEMS倾斜镜上电极5与下电极块6的排布图。 [0014] FIG. 4 is a yaw axis can freely change two-dimensional MEMS tilt mirror electrode 5 and the lower electrode 6 of the block arrangement of FIG.

[0015] 图5是偏转轴可自由变换的二维MEMS倾斜镜的镜面1与上电极5的排布图。 [0015] FIG. 5 is a two-dimensional yaw axis MEMS tilt mirror can freely change the mirror 1 and the upper electrode 5 of the arrangement of FIG.

[0016] 图6是偏转轴可自由变换的二维MEMS倾斜镜下电极块6的排布示意图。 [0016] FIG. 6 is a two-dimensional MEMS yaw axis may be inclined freely change the arrangement of microscopic electrode 6 a schematic block.

[0017] 图7是在偏转轴可自由变换的二维MEMS倾斜镜下电极块6_4上加电时,倾斜镜的镜面偏转示意图。 [0017] FIG. 7 is a two-dimensional MEMS yaw axis may be inclined freely transform blocks 6_4 microscopic electrode is powered, the deflection mirror tilt mirror FIG.

[0018] 图8是在偏转轴可自由变换的二维MEMS倾斜镜下电极块6_5上加电时,倾斜镜的镜面偏转示意图。 [0018] FIG. 8 is a two-dimensional MEMS yaw axis may be inclined freely transform blocks 6_5 microscopic electrode is powered, the deflection mirror tilt mirror FIG.

[0019] 图9是在偏转轴可自由变换的二维MEMS倾斜镜下电极块6-1、6_2、6-3、6_4上加相同电压值时,倾斜镜的镜面偏转示意图。 [0019] FIG. 9 is the same applied voltage, the mirror tilt mirror deflection electrode block schematic diagram of the microscope in a two-dimensional MEMS 6-1,6_2,6-3,6_4 yaw axis may be inclined freely change.

[0020] 图10是在偏转轴可自由变换的二维MEMS倾斜镜下电极块6-5、6_6、6-7、6_8上加相同电压值时,倾斜镜的镜面偏转示意图。 When [0020] FIG. 10 is inclined in a two-dimensional microscopic electrode block yaw axis MEMS freely transform 6-5,6_6,6-7,6_8 plus the same voltage value, a schematic view of the deflection mirror tilt mirror.

[0021 ] 图11是在偏转轴可自由变换的二维MEMS倾斜镜下电极块6_4、6_5上加相同电压值时,倾斜镜的镜面偏转示意图。 [0021] FIG. 11 is the same applied voltage, the mirror tilt mirror deflection electrode block schematic diagram of the microscope in a two-dimensional MEMS 6_4,6_5 yaw axis may be inclined freely change.

[0022] 图12是当在转轴可自由变换的二维MEMS倾斜镜下电极块6_5上的电压值是下电极块6-4的10倍时,倾斜镜的镜面偏转示意图。 [0022] FIG. 12 is inclined when the voltage value on the two-dimensional microscopic electrode blocks 6_5 MEMS shaft freely transformation is 10 times lower electrode blocks 6-4, a schematic view of the deflection mirror tilt mirror.

[0023] 图13是当在转轴可自由变换的二维MEMS倾斜镜下电极块6_5上的电压值是下电极块6-1的10倍时,倾斜镜的镜面偏转示意图。 [0023] FIG. 13 is inclined when the voltage value on the two-dimensional microscopic electrode blocks 6_5 MEMS shaft freely transformation is 10 times lower electrode blocks 6-1, a schematic view of the deflection mirror tilt mirror.

[0024] 图14是当在偏转轴可自由变换的二维MEMS倾斜镜下电极块6_2和6_5上加相同的电压值时,倾斜镜的镜面偏转示意图。 [0024] FIG 14 is inclined when the blocks 6_2 and 6_5 endoscopic electrode applied voltage in the same two-dimensional MEMS yaw axis may be transformed freely, the deflection mirror tilt mirror FIG.

[0025] 附图中组件符号说明: [0025] Brief Description of the reference numerals:

[0026] 1倾斜镜镜面; [0026] inclined mirror surface;

[0027] 2-1膜层沉积基底;2-2硅基底; [0027] The film deposition substrate 2-1; 2-2 silicon substrate;

[0028] 3固定梁; [0028] 3 fixing beam;

[0029] 4绝缘层;[0030] 5上电极板; [0029] insulating layer 4; [0030] 5 on the electrode plate;

[0031] 6下电极块; [0031] The lower electrode 6 blocks;

[0032] 7镜面支柱; [0032] Mirror 7 struts;

[0033] 8上电极与下电极的间距; [0033] The pitch of the lower electrode 8 and the electrode;

[0034] 9上电板与镜面的间距; [0034] The upper plate 9 and a mirror pitch;

[0035] 10镜面的多晶硅层; [0035] The polysilicon layer 10 is a mirror;

[0036] 11镜面金层; [0036] 11 mirror gold layer;

[0037] 12固定梁的宽度尺寸; [0037] The width dimension of the beam 12 is fixed;

[0038] 13下电极块的长度尺寸; Length [0038] of the electrode block 13;

[0039] 14下电极块的宽度尺寸; The width dimension of [0039] 14 lower electrode block;

[0040] 15下电极块的纵向间距尺寸; Longitudinal spacing dimension [0040] 15 electrode block;

[0041] 16下电极块超出上电极的纵向尺寸; [0041] The lower electrode 16 beyond the longitudinal dimension of the block on the electrode;

[0042] 17下电极块的纵向间距; Longitudinal spacing [0042] 17 lower electrode block;

[0043] 18上电极的纵向尺寸; [0043] The longitudinal dimension of the upper electrode 18;

[0044] 19下电极块横向缩进尺寸; The [0044] 19 lateral indent electrode block size;

[0045] 20上电极的横向尺寸; [0045] The transverse dimension of the upper electrode 20;

[0046] 21固定梁的长度尺寸; [0046] The length dimension of the beam 21 is fixed;

[0047] 22上电极超出镜面距离的横向尺寸; [0047] The upper electrode 22 beyond the lateral dimensions of the mirror distance;

[0048] 23镜面的横向尺寸; [0048] The transverse dimension of the mirror 23;

[0049] M镜面的纵向尺寸; [0049] M specular longitudinal dimension;

[0050] 25上电极超出镜面距离的纵向尺寸; [0050] The upper electrode 25 beyond the longitudinal dimension of the mirror distance;

[0051] 6-1倾斜镜下边左端第一块下电极块;6-2倾斜镜下边左端第二块下电极块;6-3 倾斜镜下边左端第三块下电极块;6-4倾斜镜下边左端第四块下电极块;6-5倾斜镜上边右端第一块下电极块;6-6倾斜镜上边右端第二块下电极块;6-7倾斜镜上边右端第三块下电极块;6-8倾斜镜上边右端第四块下电极块; [0051] Endoscopic 6-1 inclined edge of a lower left electrode blocks; 6-2 inclined left side of the second block microscopic lower electrode blocks; 6-3 inclined lower third block left edge microscopic electrode blocks; tilt mirror 6-4 the lower left block of the fourth electrode blocks; 6-5 upper right oblique mirror at a first electrode blocks; 6-6 oblique mirror at the upper right end of second block electrode blocks; 6-7 oblique mirror at the upper right end of the third block of the block electrode ; 6-8 oblique mirror at the upper right end of the fourth block electrode blocks;

[0052] 26倾斜镜偏转轴Y'与Y轴的夹角。 [0052] The mirror 26 is inclined yaw axis Y 'and Y axis angle.

具体实施方式 detailed description

[0053] 为解决背景技术中偏转轴固定的二维MEMS倾斜镜在光路转换时存在的不足,提高二维MEMS倾斜镜的光路转换效率和质量,本发明提供一种偏转轴可以自由变换的二维MEMS倾斜镜。 [0053] In order to solve the shortcomings of the background art, when a fixed yaw axis MEMS tilt mirror in the two-dimensional optical path conversion, optical path to improve the efficiency and quality of MEMS tilt mirror in the two-dimensional, the present invention is to provide two one vinylidene shaft can freely transform dimensional MEMS tilt mirror.

[0054] 请参阅图1、2、3、4、5和图6,分别是本发明偏转轴可自由变换的二维MEMS倾斜镜的结构示意图、偏转轴可自由变换的二维MEMS倾斜镜的剖面示意图、偏转轴可自由变换的二维MEMS倾斜镜的俯视图、偏转轴可自由变换的二维MEMS倾斜镜上电极5与下电极块6 的排布图、偏转轴可自由变换的二维MEMS倾斜镜的镜面1与上电极5的排布图,以及偏转轴可自由变换的二维MEMS倾斜镜下电极块6的排布示意图。 [0054] Please refer to FIGS. 4, 5 and 6, respectively, is a structural diagram of the present invention can freely change the yaw axis MEMS tilt mirror in the two-dimensional, two-dimensional yaw axis MEMS tilt mirror can be freely converted to a schematic cross-sectional plan view of the yaw axis may be transformed freely MEMS tilt mirror in the two-dimensional, the yaw axis can freely change two-dimensional MEMS tilt mirror electrode 5 and the lower electrode block arrangement of FIG. 6, a two-dimensional MEMS yaw axis freely transform microscopic mirror tilt mirror electrode block 1 and the upper electrode arrangement of FIG. 5, and a two-dimensional MEMS yaw axis 6 can freely change the arrangement of the inclined FIG.

[0055] 本发明的偏转轴可自由变换的二维MEMS倾斜镜由镜面1、膜层沉积基底2_1、硅基底2-2、固定梁3、绝缘层4、上电极5、下电极块6以及支撑柱7组成,其中下电极块6组合成倾斜镜的下电极。 [0055] The present invention yaw axis can freely change two-dimensional MEMS tilt mirror from a mirror 1, the film deposition substrate 2_1, 2-2 silicon substrate, fixed beam 3, the insulating layer 4, the electrodes 5, 6 and the lower electrode block support column 7, where the lower electrode 6 are combined into the block of the lower electrode of the tilt mirror. 膜层沉积基底2-1与硅基底2-2共同形成偏转轴可自由变换的二维MEMS倾斜镜的基底2,通过将上电极5单边固定在基底2上,并在下电极非对称加电即可实现倾斜镜偏转轴的自由变换,实现镜面绕所需偏转轴的偏转变形。 Film deposition substrate and the silicon substrate 2-1 2-2 together form a two-dimensional substrate of MEMS tilt mirror can freely change the yaw axis 2, unilateral immobilized on a substrate 2 by the upper electrode 5, and the lower electrode asymmetric power freedom to transform yaw axis tilt mirror of the deflection mirror about the desired modification of the yaw axis.

[0056] 硅基底2-2的材料为单晶硅,在其上沉积2nm-0. 5 μ m厚的氮化硅绝缘层4,用于阻隔下电极块6与硅基底2-2间的电流短路。 [0056] 2-2 silicon base material made of monocrystalline silicon, in the silicon nitride insulating layer is deposited thereon 2nm-0. 5 μ m thick 4, the electrode block 62-2 for the barrier between the silicon substrate and short-circuit current. 在氮化硅绝缘层上沉积厚度0. 5-3 μ m的掺杂多晶硅层用作构成下电极块6。 Depositing a doped polysilicon layer as a thickness of 0. 5-3 μ m on the silicon nitride insulating layer constituting the lower electrode 6 blocks.

[0057] 倾斜镜的下电极不是一个单一的电极,而是由多个下电极块6排列组合而成,下电极块6的形状可以是圆形、三角形、四边形或其他多边形状,本发明以长方形的下电极块6进行阐述。 The lower electrode [0057] The tilt mirror electrode is not a single, but a combination of a plurality of lower electrodes arrayed block 6, the block shape of the lower electrode 6 may be circular, triangular, quadrangular or other polygonal shape, in the present invention rectangular block lower electrode 6 are set forth. 下电极块6分布在上电极5的下面,其中下电极块6的长度尺寸13在I-IOOOym之间,宽度尺寸14在1-1000 μ m之间,下电极块6之间的横向间距15控制在1-1000 μ m之间,下电极块6的纵向距离17控制在1-1000 μ m之间。 Distribution of the lower electrode below the upper block 6 of the electrode 5, wherein the lower electrode 6 is the block length 13 between I-IOOOym, the width dimension 14 between 1-1000 μ m, the lower electrode 6 between the lateral spacing block 15 control between 1-1000 μ m, the lower electrode block 176 controls the longitudinal distance between 1-1000 μ m. 下电极块6超出上电极5边界的纵向距离16控制在-500 μ m M 500 μ m之间,负号表示下电极块6在上电极5 内部。 6 the lower electrode block 5 exceeds the upper electrode 16 controls border the longitudinal distance between -500 μ m M 500 μ m, the negative sign indicates the upper electrode 6 inside the lower electrode 5 blocks. 超出上电极5边界的横向尺寸距离19控制在-500μπι至500μπι之间,负号表示下电极块6在上电极5内部。 Beyond the transverse dimension of the upper electrode 5 from the boundary 19 between the control -500μπι to 500μπι, negative sign indicates the upper electrode 6 inside the lower electrode 5 blocks.

[0058] 当下电极块的尺寸确定后,通过使下电极块6超出上电极5的边界一定的距离,可以在保证获得大的转动力矩的同时,减小上下电极间的相对面积,避免静电吸合效应产生。 [0058] After the lower electrode block size is determined by the electrode block 6 at a certain distance beyond the upper boundary of the electrode 5 can be obtained while ensuring a large rotational torque, reducing the opposing area between the upper and lower electrodes, the electrostatic suction avoid combined effect produced. 下电极块6的个数要求大于2个。 The number of the lower electrode 6, wherein the block is greater than 2.

[0059] 上电极5的材料是掺杂的多晶硅,厚度0.5-50 μ m,通过固定梁3单边非对称的固定在基底2上,固定梁3的形状和尺寸可以按照实际需求设计,此处以长方形的固定梁为例进行阐述。 Materials [0059] The upper electrode 5 is doped polysilicon, the thickness of 0.5-50 μ m, by unilateral asymmetrical 3 fixed on the base 2 fixed to the beam, the beam 3 fixed shape and size can be designed according to actual demand, this impose a fixed rectangular beam as an example to elaborate. 上电极5的上表面通过支撑柱7支撑镜面1,上电极5的下表面距离下电极块6 的间距8为0. 5-100 μ m。 5 the upper surface of the upper electrode 7 is supported by mirror support column 1, the upper electrode 5 from the lower surface of the electrode spacing block 6 8 0. 5-100 μ m.

[0060] 镜面1是两层膜结构,下层是多晶硅层10,厚度0.5-50 μ m,上层是金层11,厚度20nm-5 μ m0镜面的长度尺寸23控制在1-1000 μ m之间,宽度尺寸M控制在1-1000 μ m之间,镜面纵向在上电极内的缩进距离25控制在-500 μ m至500 μ m之间,镜面横向在上电极内的缩进尺寸22控制在-500μπι至500μπι之间,负号表示镜面1在上电极5内部。 [0060] 1 is a two-layer film mirror structure, the lower is the polysilicon layer 10, the thickness of 0.5-50 μ m, the upper layer of gold 11, the length dimension of the thickness of 20nm-5 μ m0 between the mirror 23 controls 1-1000 μ m width dimension m control between 1-1000 μ m, the mirror on the longitudinal distance in the indentation between the control electrode 25 -500 μ m to 500 μ m, in the retracted mirror transverse dimension 22 in the control electrode between -500μπι to 500μπι, a negative sign indicates a mirror 5 on the internal electrode. 镜面1距上电极5的间距9控制在0. 5-100 μ m之间。 A mirror spacing from the upper electrode 5 of 9 control between 0. 5-100 μ m.

[0061] 本发明的工作原理是: [0061] The working principle of the present invention are:

[0062] 通过在倾斜镜的上电极5和下电极块6之间加电压值,在静电吸引的作用下,上、 下电极之间产生静电力,利用静电力产生的力矩驱动倾斜镜面1绕偏转轴产生偏转。 [0062] 5 and by the voltage value applied between the upper electrode 6 is inclined at the mirror electrode blocks, the electrostatic attraction acting at the upper and lower electrodes generating an electrostatic force between the use of electric power generated static torque driving the tilting mirror about 1 deflecting deflection axis. 通过在不同排布方式的下电极块6上加相同的电压值,或在相同排布方式的下电极块6上加不同的电压值,或综合使用以上两种方案实现倾斜镜偏转轴的自由变换。 On the lower electrode by blocks of different ways of arranging the same applied voltage 6, or a different voltage values ​​applied on the lower electrode blocks arranged in the same manner as 6, or use a combination of schemes to achieve free yaw axis tilt mirror transformation.

[0063] 1)在不同排布方式的下电极块6上加相同的电压值,实现二维MEMS倾斜镜偏转轴的自由变换。 [0063] 1) on the lower electrode 6 plus the same manner blocks of different arrangements voltage value, converting the two-dimensional freedom MEMS tilt mirror in the yaw axis.

[0064] 在图6所示的结构图中,在其下电极块6-4加电,在静电力的作用下,倾斜镜子的上电极5产生偏转,带到镜面1产生同样角度的偏转,其镜面偏转轴Y'与Y轴的夹角为83 度。 [0064] In the configuration shown in FIG. 6, in which the power electrode blocks 6-4, under the action of an electrostatic force, the upper electrode is inclined deflecting mirror 5, a mirror to deflect to the same angle, its mirror yaw axis Y 'and Y-axis angle is 83 degrees. 如在倾斜镜电极块6-5上加相同的电压值,则倾斜镜偏转轴Y'与Y轴的夹角为65度。 As the mirror electrode on the inclined block 6-5 the same voltage applied, the tilt mirror yaw axis Y 'and Y-axis angle is 65 degrees.

[0065] 2)在相同排布方式的下电极块6上加不同的电压值实现二维MEMS倾斜镜的偏转轴的自由变换。 [0065] 2) different voltage values ​​applied to achieve a two-dimensional transformation consisting of MEMS tilt mirror in the rotating axis on the lower electrode blocks arranged in the same manner as the 6.

[0066] 利用在倾斜镜相同排布方式的下电极块6上加不同的电压值同样可以产生倾斜镜偏转轴的变换效果,例如在倾斜镜下电极块6-4、6-5上加相同的电压值时,倾斜镜的偏CN 102253486 A [0066] Utilization in 6 different voltage values ​​applied at the same electrode block tilt mirror arrangement may produce the same manner as the effect of the change of the yaw axis tilt mirror, for example, on the inclined electrode piece 6-4 and 6-5 plus the same microscope when the voltage value of the tilt mirror bias CN 102253486 a

说明书 Instructions

5/6 5/6

转轴Y'与镜子Y轴的夹角是90度,但当下电极块6-5上的电压值是下电极块6-4的10倍时,倾斜镜的偏转轴Y'与Y轴的夹角为88度。 Shaft angle Y 'of the mirror angle of the Y-axis is 90 degrees, but the voltage on the lower electrode when the lower electrode piece 6-5 block 10 is 6-4 times, the tilt mirror yaw axis Y' and Y axis 88 degrees.

[0067] 3)在不同排布方式的下电极块6上加不同的电压值实现二维MEMS倾斜镜的偏转轴的自由变换。 [0067] 3) 6 different voltage values ​​applied freedom MEMS tilt mirror in the two-dimensional transform yaw axis in blocks of different electrode arrangements. FIG.

[0068] 通过在不同排布方式的下电极块6上加不同的电压值也可以实现二维MEMS倾斜镜偏转轴的自由变换,例如在倾斜镜下电极块6-5加的电压值是在下电极块6-5上所加电压值的10倍时,倾斜镜的偏转轴Y'与镜子Y轴的夹角是96度,但当下电极块6-5上的所加电压值与下电极块6-2的电压值相同时,倾斜镜的偏转轴Y'与Y轴的夹角为87度。 [0068] by applying different voltage values ​​on the lower electrode blocks arranged in different ways 6 may transform the two-dimensional freedom MEMS tilt mirror yaw axis, for example in endoscopic applied voltage value of the inclination electrode piece 6-5 is lower 10 times the value of the voltage applied on the electrode block 6-5, the inclined angle of the mirror yaw axis Y 'and Y-axis mirror is 96 degrees, but the value of the voltage applied on the lower electrode and the lower electrode piece 6-5 block 6-2 are the same voltage value, the inclination angle of the mirror yaw axis Y 'and Y axis is 87 degrees.

[0069] 本发明的偏转轴可自由变换的二维MEMS倾斜镜通过在倾斜镜的不同排布方式的下电极块6上加相同的电压值或在同样排布方式的下电极块6加不同的电压值,或综合利用以上两种措施,可以实现倾斜镜偏转轴的自由变换,其重要意义在于: [0069] The present invention yaw axis can freely change two-dimensional MEMS tilt mirror 6 on the same voltage value as applied by the different arrangement of the inclined mirror or the lower electrode block at the same block of electrodes arranged in different ways plus 6 the voltage value or utilization of the above two measures can be implemented free transform yaw axis tilt mirror, its significance lies in:

[0070] 1)提高了二维MEMS倾斜镜的灵活性。 [0070] 1) a two-dimensional MEMS tilt mirror to improve flexibility. 转轴可以自由变换的二维MEMS倾斜镜通过调制偏转轴的角度,可实现镜面沿此轴的自由偏转,提高了倾斜镜的光路转换效率; Shaft dimensional MEMS tilt mirror can freely change the yaw axis by angle modulation can be achieved along the axis of the mirror free deflection, improved tilt mirror optical path conversion efficiency;

[0071] 2)转轴角度的自由转换可以方便的对镜子的光路转换效果进行调整,消除固定轴的二维MEMS倾斜镜因加工误差的存在而造成的光路偏转误差,提高倾斜镜的光路转换质量; [0071] 2) consisting of conversion of the shaft angle can easily optical path conversion effect of the mirror is adjusted to eliminate the optical path of the two-dimensional MEMS tilt mirror fixed shaft by the presence of machining error caused by the deflection error, improve the conversion quality optical path inclined mirror ;

[0072] 3)偏转轴可自由变换的二维MEMS倾斜镜的结构简单,易加工,在同一片镜子上可实现多个方向的光路转换,使用范围广,利用效率高,使用和制作成本低。 [0072] 3) a two-dimensional MEMS yaw axis can freely change the tilt mirror structure is simple, easy to process, on a mirror can be realized with a plurality of optical path changing directions, using a wide range of high efficiency, low manufacturing cost, and .

[0073] 以图6所示的下电极块的排布方式进行本发明的偏转轴可自由变换的二维MEMS 倾斜镜的具体实施例的说明。 [0073] In the arrangement of FIG. 6 blocks shown embodiment the lower electrode will be described specific embodiments of the present invention is a two-dimensional MEMS yaw axis may be transformed freely inclined mirror. 图6所示的二维MEMS倾斜镜的上电极5的长度尺寸20为230 μ m,宽度尺寸18为100 μ m,固定梁3的长度尺寸21为38 μ m,宽度尺寸12为22 μ m, 下电极块6的长度尺寸13为40 μ m,宽度尺寸14为30 μ m,下电极块6的横向间距15为30 μ m,纵向间距17为40 μ m,下电极块6纵向超出上电极5的尺寸16为10 μ m,下电极块6横向缩进上电极5的尺寸19为35 μ m,上电极5厚度3 μ m,下电极块6的厚度为0. 5 μ m。 The upper electrode dimensional MEMS tilt mirror 6 shown in FIG. 5 is a length dimension of 20 230 μ m, width of 18 to 100 μ m, a length dimension 21 of the fixed beam 3 is 38 μ m, width of 12 to 22 μ m , the lower electrode block length 6 of 13 to 40 μ m, width of 14 to 30 μ m, the lower electrode block lateral spacing of 6 is 15 to 30 μ m, the longitudinal spacing of 17 to 40 μ m, beyond the 6 lower longitudinal electrode block electrode size of 5 to 16 10 μ m, the lower electrode block 6 laterally retracted upper electrode 19 is the size of 5 35 μ m, a thickness of the upper electrode 5 3 μ m, thickness of the lower electrode 6 is block 0. 5 μ m.

[0074] 1)在不同排布方式上的下电极块6上加相同电压值实现二维MEMS倾斜镜偏转轴的自由变换。 [0074] 1) on the lower electrode block 6 the same voltage value applied in different ways to achieve the arrangement consisting of the two-dimensional transform of MEMS tilt mirror yaw axis.

[0075] 当在下电极块6-4上加电时,倾斜镜的偏转轴Y'与Y轴的夹角为83度,镜面的变形如图7所示。 [0075] When the block 6-4 on the lower powered electrode, the inclined angle of the mirror yaw axis Y 'and Y axis is 83 degrees, the deformable mirror shown in Fig.

[0076] 当在电极块6-5上加电时,倾斜镜的偏转轴Y'与Y轴的夹角为65度,镜面的变形如图8所示。 [0076] When the electrode is powered block 6-5, the inclined angle of the mirror yaw axis Y 'and Y axis is 65 degrees, the deformation of the mirror as shown in FIG.

[0077] 当在下电极块6-1、6-2、6-3、6-4上加相同电压值时,倾斜镜的偏转轴Y'与Y轴的夹角为98度,镜面的变形如图9所示。 [0077] When the same voltage value applied on the lower electrode blocks 6-1, 6-2, the inclined angle of the mirror yaw axis Y 'and Y axis is 98 degrees, the deformation of the mirror, such as 9 shown in FIG.

[0078] 当在下电极块6-5、6-6、6-7、6-8上加相同电压值时,倾斜镜的偏转轴Y '与Y轴的夹角为78度,镜面的变形如图10所示。 [0078] When the same voltage value applied on the lower electrode block 6-5,6-6,6-7,6-8, the inclined angle of the mirror yaw axis Y 'and Y axis is 78 degrees, the deformation of the mirror, such as 10 shown in FIG.

[0079] 2)在相同排布方式的下电极块6上加不同的电压值实现二维MEMS倾斜镜偏转轴的自由变换。 [0079] 2) was added to achieve different voltage values ​​consisting of a two-dimensional transform yaw axis MEMS tilt mirror in the same block on the lower electrode 6 arranged manner.

[0080] 当在下电极块6-4、6_5同时加相同电压值时,倾斜镜的偏转轴Y'与Y轴的夹角为90度,镜面的变形如图11所示。 [0080] When the lower electrode block 6-4,6_5 while adding the same voltage value, the inclination angle of the mirror yaw axis Y 'and Y-axis is 90 degrees, the deformation of the mirror 11 shown in FIG.

[0081] 当在下电极块6-5上的电压值是下电极块6-4的10倍时,倾斜镜的偏转轴V与Y轴的夹角为94度,镜面的变形如图12所示。 [0081] When the voltage on the lower electrode blocks 6-5 is 6-4 times the electrode block 10, the yaw axis angle V and the Y-axis mirror tilt is 94 degrees, the deformation of the mirror 12 shown in FIG. .

[0082] 3)在不同排布方式的下电极块6上加不同的电压值实现二维MEMS倾斜镜偏转轴的变换。 [0082] 3) 6 different voltage values ​​applied to achieve two-dimensional transform yaw axis MEMS tilt mirror in the electrode arrangement of blocks of different ways.

[0083] 当加在倾斜镜下电极块6-5上的电压值是下电极块6-1的10倍时,倾斜镜的偏转轴Y'与Y轴的夹角为96度,镜面的变形如图13所示。 [0083] When applied to the electrode block 6-5 microscope inclined voltage is 10 times lower electrode block 6-1, the inclined angle of the mirror yaw axis Y 'and Y axis is 96 degrees, the deformation of the mirror 13.

[0084] 当在倾斜镜下电极块6-2和6-5加相同的电压值时,倾斜镜的偏转轴V与Y轴的夹角为87度,镜面的变形如图14所示。 [0084] When the inclination endoscopic electrode blocks 6-2 and 6-5 the same applied voltage, the angle V and the yaw axis Y-axis mirror tilt is 87 degrees, the deformation of the mirror 14 shown in FIG.

Claims (5)

  1. 1. 一种偏转轴可以自由变换的二维MEMS倾斜镜,其上电极单边非对称的固定在基底上,通过在倾斜镜的不同排布方式的下电极块上加相同的电压值或在相同排布的下电极块上加不同的电压值,或将以上两种方案综合使用,完成二维MEMS倾斜镜的偏转轴的自由变换。 A yaw axis can freely change two-dimensional MEMS tilt mirror, on which the electrodes unilateral asymmetric immobilized on a substrate, the lower electrode by blocks of different ways of arranging the same tilt mirror voltage value plus or different voltage values ​​applied to the lower electrode of the same block arrangement, or a more integrated use of two solutions, the two-dimensional transform is completed MEMS tilt mirror consisting of the yaw axis.
  2. 2.根据权利要求1所述偏转轴可自由变换的二维MEMS倾斜镜,其下电极由多个下电极块6排列组合而成,下电极块6的个数大于2个,且每个下电极块之间留有间距。 The two-dimensional MEMS tilt mirror 1 can freely change the yaw axis claim, which blocks the lower electrode 6 by a plurality of electrodes arranged in combination, the number of blocks of the lower electrode 6 is larger than 2, and each of the lower leave a clearance between the electrode block.
  3. 3.根据权利要求1所述偏转轴可自由变换的二维MEMS倾斜镜,其中,下电极块超出上电极边界的纵向距离控制在-500 μ m至500 μ m之间,超出上电极边界的横向尺寸距离控制在-500 μ m至500 μ m之间,负号表示下电极块在上电极内部。 1 according to the two-dimensional MEMS yaw axis can freely change the tilt mirror claim, wherein the longitudinal distance beyond the upper boundary of the lower electrode between the control electrode blocks -500 μ m to 500 μ m, the upper electrode beyond the boundary lateral dimension distance control between -500 μ m to 500 μ m, the negative sign indicates the lower internal electrode on the electrode block.
  4. 4.根据权利要求1所述偏转轴可自由变换的二维MEMS倾斜镜,其中,上电极与下电极块的距离为0. 5-100 μ m0 The distance of the two-dimensional MEMS tilt mirror 1 can freely change the yaw axis claim, wherein the upper and lower electrodes is block 0. 5-100 μ m0
  5. 5.根据权利要求1所述偏转轴可自由变换的二维MEMS倾斜镜,其中,倾斜镜的镜面纵向在上电极内的缩进距离控制在-500 μ m至500 μ m之间,倾斜镜的镜面横向在上电极内的缩进尺寸控制在-500 μ m至500 μ m之间,倾斜镜的镜面与上电极上表面的距离为0. 5-100 μ m之间,负号表示倾斜镜的镜面在上电极的外部。 1 according to the two-dimensional MEMS tilt mirror can freely change the yaw axis claim, wherein the mirror tilt mirror in the longitudinal direction of the control electrode indent between -500 μ m to 500 μ m, tilt mirror specular lateral dimension in the upper electrode retracted controlled between -500 μ m to 500 μ m, the distance between 0. 5-100 μ m and an inclined mirror on the mirror surface of the upper electrode, a negative number indicates a tilt mirror mirror on the external electrode.
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