CN1472818A - Image sensor microlens set, image sensor and producing method thereof - Google Patents
Image sensor microlens set, image sensor and producing method thereof Download PDFInfo
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- CN1472818A CN1472818A CNA021274541A CN02127454A CN1472818A CN 1472818 A CN1472818 A CN 1472818A CN A021274541 A CNA021274541 A CN A021274541A CN 02127454 A CN02127454 A CN 02127454A CN 1472818 A CN1472818 A CN 1472818A
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000010410 layer Substances 0.000 claims description 125
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 21
- 230000003647 oxidation Effects 0.000 claims description 21
- 238000007254 oxidation reaction Methods 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 239000011241 protective layer Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
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- 238000003384 imaging method Methods 0.000 abstract description 10
- 206010034960 Photophobia Diseases 0.000 abstract description 2
- 208000013469 light sensitivity Diseases 0.000 abstract description 2
- 206010070834 Sensitisation Diseases 0.000 abstract 1
- 230000008313 sensitization Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 238000010586 diagram Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
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- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- 230000036211 photosensitivity Effects 0.000 description 1
- KNVAYBMMCPLDOZ-UHFFFAOYSA-N propan-2-yl 12-hydroxyoctadecanoate Chemical compound CCCCCCC(O)CCCCCCCCCCC(=O)OC(C)C KNVAYBMMCPLDOZ-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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Abstract
An image micro-lens system, imaging sensors and producing method, providing a imaging sensors component and imaging sensors that can increase the resolution of image, has high efficiency of imaging sensitization, insure the light sensitivity of photo diode area, and producing method. The micro-lens system includes color filter, micro-convex, first dielectric layer and micro-concave mirror, the top and bottom surface of first dielectric have a plane by which is connected with color filter, and have a convexity that the same curvature with micro-concave and is connected with micro-concave; the imaging sensor includes the basement, the interconnect that is formed on the basement, the micro-lens system that is set on the interconnect and the photo diode that is formed in the basement.
Description
Technical field
The invention belongs to image sensor assembly, image sensor and manufacture method thereof, particularly a kind of image sensor lenticule group, image sensor and manufacture method thereof.
Background technology
Image sensor is divided into CCD (Charge Coupled Device; Charge coupled cell) with two kinds of CMOS (complementary metal oxide semiconductor) image sensor.Generally speaking, the element of image sensor roughly comprises near-infrafed photodiodes (photodiode), colored filter (color filter) and lenticule (microlens).
Near-infrafed photodiodes system is arranged in the substrate of semiconductor silicon, as sensing area (sensor area), with the light of sense along different color.
Colored filter is arranged at the near-infrafed photodiodes top.Behind the logical colored filter of incident light, can be filtered and be divided into red (R), green (G) and blue (B) three kinds of primitive color lights.And then by corresponding auroral poles bulk absorption and sensing.
Lenticule then be positioned over colored filter above, use the increase optical sensitivity.
As shown in Figure 1, the lenticule manufacture method of conventional solid-state device for image comprises the steps:
At first in semiconductor silicon matrix 100, form near-infrafed photodiodes 102, and each near-infrafed photodiodes 102 all have its correspondence in order to read the electric crystal of image data;
Then, carry out the internal connection-wire structure processing procedure, to form required lead 104;
After treating that internal connection-wire structure 106 is finished, cover first oxide layer 110 of layer protective layer 108 and transparent and planarization;
Then on first oxide layer 110 of planarization, form colored filter 112;
The top that continues at colored filter 112 forms the second transparent and smooth oxide layer 114 of another layer;
On second oxide layer 114, cover photoresist layer then, by developing manufacture process (developingprocess) with its patterning after, heat-treat, so that patterned light blockage layer is melted fully, utilize the surface tension of itself, to form lenticule 116.
Yet, along with the trend of present raising image analytic degree, certainly will improve pixel (pixel) density, therefore must dwindle the area of each pixel.Yet as shown in Figure 2, after the integration of pixel improved, the number of plies that must increase internal connection-wire structure 106 was to satisfy the requirement of its circuit design, so the distance of lenticule 116 and near-infrafed photodiodes 102 also increases thereupon.If do not change the radius of curvature of lenticule 116, then incident ray can focus on the top of near-infrafed photodiodes 102, causes imaging efficiency and light receiving efficiency poor.Therefore, as shown in Figure 3, must increase the focusing length of lenticule 116, make incident ray enter lenticule 116 via air after, can focus in the zone of near-infrafed photodiodes 102.And the method that improves lenticule 116 focusing lengths is the radius of curvature (promptly reducing curvature) that increases lenticule 116.But, when the curvature of lenticule 116 reduces, can influence the amount of incident of light, make the lightsensitivity (photosensitivity) in near-infrafed photodiodes 102 zones reduce, influence the resolution of image on the contrary.
Summary of the invention
The purpose of this invention is to provide a kind of image sensor lenticule group, image sensor and manufacture method thereof that improves image analytic degree, imaging photosensitive efficient height, guarantees near-infrafed photodiodes area light susceptibility.
Image sensor lenticule group of the present invention comprises colored filter, be arranged on the colored filter in order to the dimpling lens of assembling incident light, be arranged at first dielectric layer under the colored filter, be arranged at nick lens under first dielectric layer; The top surface that first dielectric layer contacts with colored filter is the plane, and its basal surface is the convex surface that curvature is identical with the nick lens curvature and contact.
Image sensor of the present invention comprises substrate, be formed at suprabasil internal connection-wire structure, be arranged at the lenticule group on the internal connection-wire structure and be arranged under the internal connection-wire structure and be formed at intrabasement near-infrafed photodiodes; The lenticule group comprises colored filter, be arranged on the colored filter in order to the dimpling lens of assembling incident light, be arranged at first dielectric layer under the colored filter, be arranged at nick lens under first dielectric layer; The top surface that first dielectric layer contacts with colored filter is the plane, and its basal surface is the convex surface that curvature is identical with the nick lens curvature and contact.
Image sensor manufacture method of the present invention comprises provides the substrate that forms near-infrafed photodiodes; In substrate, form multi-layer internal connection line; On multi-layer internal connection line, form protective layer; On protective layer, form the photoresist design layer of definition cover curtain layer, in photoresist design layer, form opening corresponding to near-infrafed photodiodes; Photoresist design layer with the definition cover curtain layer carries out isotropic etching as etch mask to protective layer, to form in protective layer as have arc groove nick lens corresponding to near-infrafed photodiodes; Remove cover curtain layer; On the nick lens, form first dielectric layer that one deck has flat surfaces; On first dielectric layer, form colored filter, and on colored filter, form the dimpling lens.
Wherein:
Be provided with the 3rd dielectric layer that contacts with colored filter with the dimpling lens between dimpling lens and the colored filter.
The refractive index of dimpling lens, the 3rd dielectric layer, colored filter and first dielectric layer is greater than the refractive index of air, and less than the refractive index of nick lens.
The material of first dielectric layer is an oxidation silicon; The material of nick lens is silicon nitride/nitrogen oxidation silicon.
Be provided with the 3rd dielectric layer that contacts with colored filter with the dimpling lens between dimpling lens and the colored filter.
The refractive index of dimpling lens, the 3rd dielectric layer, colored filter and first dielectric layer is greater than the refractive index of air, and less than the refractive index of nick lens; The material of first dielectric layer is an oxidation silicon; The material of nick lens is silicon nitride/nitrogen oxidation silicon.
The image sensor manufacture method also is included in the 3rd dielectric layer that formation contacts with dimpling lens and colored filter between colored filter surface and the dimpling lens.
The material of first dielectric layer is an oxidation silicon; The material of nick lens is silicon nitride/nitrogen oxidation silicon.
Because lenticule group of the present invention comprises colored filter, be arranged at the dimpling lens on the colored filter and be arranged at first dielectric layer and nick lens under the colored filter in regular turn; First dielectric layer top, basal surface be the convex surface that the plane that contacts with colored filter and curvature are identical with the nick lens curvature and contact; Image sensor comprises substrate, be formed at suprabasil internal connection-wire structure, be arranged at the lenticule group on the internal connection-wire structure and be arranged under the internal connection-wire structure and be formed at intrabasement near-infrafed photodiodes; The lenticule group comprises colored filter, be arranged at the dimpling lens on the colored filter and be arranged at first dielectric layer and nick lens under the colored filter in regular turn; First dielectric layer top, basal surface be the convex surface that the plane that contacts with colored filter and curvature are identical with the nick lens curvature and contact; Manufacture method comprises provides the substrate that forms near-infrafed photodiodes; Form multi-layer internal connection line; Form protective layer; Formation has the photoresist design layer of opening; Protective layer is carried out isotropic etching, to form the nick lens; Remove cover curtain layer; On the nick lens, form first dielectric layer; On first dielectric layer, form colored filter, and on colored filter, form the dimpling lens.Increase the lenticule group that the nick lens constitute in dimpling lens belows, make incident ray after this lenticule group, become directional light, therefore,, the problem of imaging difficulty can not take place all no matter why as the near-infrafed photodiodes of photosensitive area and the distance between the lenticule group; After the superiors that manufacture method lies in traditional internal connection-wire structure form dielectric layer, increase form protective layer, the wet etching of cover curtain layer and remove step such as cover curtain layer after, proceed traditional processing procedure again; And employed light shield is identical as the near-infrafed photodiodes light shield of photosensitive area with formation in the process that forms the nick lens, and therefore, the processing procedure of its lenticule group need not increase quite simple, the as easy as rolling off a log and present process-compatible of extra light shield so processing procedure; Image sensor does not change the radius of curvature of dimpling lens, so can make the light-inletting quantity of incident ray can maintain preferable states.Not only improve image analytic degree, and imaging photosensitive efficient height, guarantee near-infrafed photodiodes area light susceptibility, thereby reach purpose of the present invention.
Description of drawings
Fig. 1, be traditional solid-state image apparatus structure schematic sectional view.
Fig. 2, be traditional solid-state image apparatus structure schematic sectional view (the internal connection-wire structure number of plies increase, when the lenticule radius of curvature is constant).
Fig. 3, be traditional solid-state image apparatus structure schematic sectional view (the internal connection-wire structure number of plies increases, when the lenticule radius of curvature increases).
Fig. 4, for image sensor manufacture method step 1 schematic diagram of the present invention.
Fig. 5, for image sensor manufacture method step 2 schematic diagram of the present invention.
Fig. 6, for image sensor manufacture method step 3 schematic diagram of the present invention.
Fig. 7, for image sensor manufacture method step 4 schematic diagram of the present invention.
Embodiment
Image sensor lenticule group of the present invention is applicable to any image sensor, for example CCD or CMOS image sensor.
As shown in Figure 7, image sensor lenticule group of the present invention comprise colored filter 424, be arranged on the colored filter 424 in order to the dimpling lens 428 of assembling incident light, be arranged at nick lens 418 under the colored filter 424, be arranged at the 3rd dielectric layer 426 between dimpling lens 428 and the colored filter 424 and be arranged at nick lens 418 and colored filter 424 between first dielectric layer 420.
The top surface that first dielectric layer 420 contacts with colored filter 424 is the plane, and its basal surface is the convex surface that curvature is identical with nick lens 418 curvature and contact.
The refractive index of dimpling lens 428, the 3rd dielectric layer 426, colored filter 424 and first dielectric layer 420 is roughly the same, and greater than the refractive index of air, and less than the refractive index of nick lens 418.Usually the refractive index of dimpling lens 428, the 3rd dielectric layer 426, colored filter 424 and first dielectric layer 420 is approximately between 1.2 to 1.6; The refractive index of nick lens 418 is approximately between 1.8 to 2.2.
As shown in Figure 7, image sensor of the present invention comprises substrate 400, is formed at suprabasil internal connection-wire structure 404, is arranged at the lenticule group on the internal connection-wire structure 404 and is arranged at internal connection-wire structure 404 times and is formed at near-infrafed photodiodes 402 in the substrate 400.
Multi-layer internal connection line 404 places on the pedestal 400 with near-infrafed photodiodes 402.This multi-layer internal connection line 404 has the multilayer of optionally adjusting, and can be the lead 407 that oxidation silicon dielectric layer 409 is made electrical isolation as six layers by material.
The lenticule group comprises colored filter 424, be arranged on the colored filter 424 in order to the dimpling lens 428 of assembling incident light, be arranged at nick lens 418 under the colored filter 424, be arranged at the 3rd dielectric layer 426 between dimpling lens 428 and the colored filter 424 and be arranged at nick lens 418 and colored filter 424 between first dielectric layer 420.
The top surface that first dielectric layer 420 contacts with colored filter 424 is the plane, and its basal surface is the convex surface that curvature is identical with nick lens 418 curvature and contact.
The refractive index of dimpling lens 428, the 3rd dielectric layer 426, colored filter 424 and first dielectric layer 420 is roughly the same, and greater than the refractive index of air, and less than the refractive index of nick lens 418.Usually the refractive index of dimpling lens 428, the 3rd dielectric layer 426, colored filter 424 and first dielectric layer 420 is approximately between 1.2 to 1.6; The refractive index of nick lens 418 is approximately between 1.8 to 2.2.
Image sensor manufacture method of the present invention comprises the steps:
Step 1
As shown in Figure 4, at first be provided as the substrate 400 of silicon substrate, and in substrate 400, form near-infrafed photodiodes 402 as photosensitive area; Each near-infrafed photodiodes 402 all have its correspondence in order to read the electric crystal of the electric charge data that sensing area produces, to convert image data to by a series of circuit design;
Cover the dielectric layer 406 of layer of transparent and planarization in near-infrafed photodiodes 402 electric crystals top;
Form multi-layer internal connection line 404 in substrate 400, this multi-layer internal connection line 404 has the multilayer of optionally adjusting, and can be the lead 407 that oxidation silicon dielectric layer 409 is made electrical isolation as six layers by material;
It is the protective layer 408 of silicon nitride (SiN) or nitrogen oxidation silicon (SiON) dielectric layer that multi-layer internal connection line 404 tops cover one deck material;
Forming one deck on protective layer 408 is unlike material, dielectric layer 410 as oxidation silicon (SiO), and on dielectric layer 410, form the photoresist design layer 412 of one deck definition cover curtain layer, in photoresist design layer 412, form opening 414 corresponding to near-infrafed photodiodes 402, and utilize and the identical light shield of formation photosensitive area, and need not additionally prepare light shield;
Step 2
As shown in Figure 5,, to dielectric layer 410, have the dielectric layer 410a of opening 414 with formation, and remove photoresist design layer 412 with the design transfer of photoresist design layer 412 of definition cover curtain layer;
As etch mask protective layer 408 is carried out isotropic etching with dielectric layer 410a, in protective layer 408, forming as the dielectric layer 408a that has arc groove 416 corresponding to near-infrafed photodiodes 402, and remove dielectric layer 410a with formation nick lens 418; The refractive index of nick lens 418 is approximately between 1.8 to 2.2;
When the material that is the protective layer 408 of dielectric layer was silicon nitride (SiN) or nitrogen oxidation silicon (SiON), waiting to the employed etching solution of etching was phosphoric acid;
Step 3
As shown in Figure 6, forming first dielectric layer 420 that one deck has flat surfaces 422 on nick lens 418, then is convex surface 416 in the surface near nick lens 418; First dielectric layer 420 is in the material of nick lens 418 refractive indexes, as oxidation silicon (SiO) on the refractive index;
Step 4
As shown in Figure 7, on first dielectric layer 420, form colored filter 424, and on colored filter 424, form dimpling lens 428; Colored filter 424 can form uneven surfaces, therefore contacts the 3rd dielectric layer 426 into the transparent and planarization of oxidation silicon (SiO) with dimpling lens 428 and colored filter 424 in formation one deck material between colored filter 424 surfaces and the dimpling lens 428.
The refractive index of convex lens 428, the 3rd dielectric layer 426, colored filter 424 and first dielectric layer 420 is roughly the same, and greater than the refractive index of air, and less than the refractive index of nick lens 418.Usually the refractive index of dimpling lens 428, the 3rd dielectric layer 426, colored filter 424 and first dielectric layer 420 is approximately between 1.2 to 1.6.
In sum, the present invention has following advantage at least:
1, image sensor of the present invention is by increase the lenticule group that nick lens 418 constitute in dimpling lens 428 belows, make incident ray after this lenticule group, become directional light, therefore, no matter, as the near-infrafed photodiodes 402 of photosensitive area and the distance between the lenticule group why the problem of imaging difficulty all can not take place.
2, after the image sensor manufacture method of the present invention the superiors that lie in traditional internal connection-wire structure 404 form dielectric layer 410, increase form protective layer, the wet etching of cover curtain layer and remove step such as cover curtain layer after, proceed traditional processing procedure again.So quite simple, as easy as rolling off a log and present process-compatible of processing procedure.
3, because image sensor of the present invention does not change the radius of curvature of dimpling lens, so can make the light-inletting quantity of incident ray can maintain preferable states.
4, image sensor manufacture method of the present invention employed light shield in the process that forms the nick lens is identical as the near-infrafed photodiodes light shield of photosensitive area with formation, and therefore, the processing procedure of its lenticule group need not increase extra light shield.
Be that mat of the present invention comprises colored filter and is arranged at the upper and lower dimpling lens of colored filter, nick lens, after making light be incident to the gathering of dimpling lens, the light that focuses on via concavees lens is slightly dispersed and is formed directional light and be incident to near-infrafed photodiodes as photosensitive area again, therefore, no matter the number of plies of internal connection-wire structure increases or reduces, the light of incident all can be incident to photosensitive area, has not only increased focusing length, and keep incident light quantity, can not influence the resolution of image.
Claims (10)
1, a kind of image sensor lenticule group, it comprises colored filter, be arranged on the colored filter in order to the dimpling lens of assembling incident light and be arranged at first dielectric layer under the colored filter; It is characterized in that described first dielectric layer has the nick lens; The top surface that first dielectric layer contacts with colored filter is the plane, and its basal surface is the convex surface that curvature is identical with the nick lens curvature and contact.
2, image sensor lenticule group according to claim 1 is characterized in that being provided with the 3rd dielectric layer that contacts with colored filter with the dimpling lens between described dimpling lens and the colored filter.
3, image sensor lenticule group according to claim 2 is characterized in that the refractive index of the refractive index of described dimpling lens, the 3rd dielectric layer, colored filter and first dielectric layer greater than air, and less than the refractive index of nick lens.
4, image sensor lenticule group according to claim 1, the material that it is characterized in that described first dielectric layer is an oxidation silicon; The material of nick lens is silicon nitride/nitrogen oxidation silicon.
5, a kind of image sensor, it comprises substrate, be formed at suprabasil internal connection-wire structure, be arranged at the lenticule group on the internal connection-wire structure and be arranged under the internal connection-wire structure and be formed at intrabasement near-infrafed photodiodes; The lenticule group comprises colored filter, be arranged on the colored filter in order to the dimpling lens of assembling incident light and be arranged at first dielectric layer under the colored filter; It is characterized in that described first dielectric layer has the nick lens; The top surface that first dielectric layer contacts with colored filter is the plane, and its basal surface is the convex surface that curvature is identical with the nick lens curvature and contact.
6, image sensor according to claim 5 is characterized in that being provided with the 3rd dielectric layer that contacts with colored filter with the dimpling lens between described dimpling lens and the colored filter.
7, image sensor according to claim 6 is characterized in that the refractive index of the refractive index of described dimpling lens, the 3rd dielectric layer, colored filter and first dielectric layer greater than air, and less than the refractive index of nick lens; The material of first dielectric layer is an oxidation silicon; The material of nick lens is silicon nitride/nitrogen oxidation silicon.
8, a kind of image sensor manufacture method, it comprises provides the substrate that forms near-infrafed photodiodes; In substrate, form multi-layer internal connection line; It is characterized in that it also is included in forms protective layer on the multi-layer internal connection line; On protective layer, form the photoresist design layer of definition cover curtain layer, in photoresist design layer, form opening corresponding to near-infrafed photodiodes;
Photoresist design layer with the definition cover curtain layer carries out isotropic etching as etch mask to protective layer, to form in protective layer as have arc groove nick lens corresponding to near-infrafed photodiodes;
And remove cover curtain layer;
On the nick lens, form first dielectric layer that one deck has flat surfaces;
On first dielectric layer, form colored filter, and on colored filter, form the dimpling lens.
9, image sensor manufacture method according to claim 8 is characterized in that it also is included in the 3rd dielectric layer that formation contacts with dimpling lens and colored filter between colored filter surface and the dimpling lens.
10, image sensor manufacture method according to claim 8, the material that it is characterized in that described first dielectric layer is an oxidation silicon; The material of nick lens is silicon nitride/nitrogen oxidation silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021274541A CN100345303C (en) | 2002-08-01 | 2002-08-01 | Image sensor microlens set, image sensor and producing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021274541A CN100345303C (en) | 2002-08-01 | 2002-08-01 | Image sensor microlens set, image sensor and producing method thereof |
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| CN1472818A true CN1472818A (en) | 2004-02-04 |
| CN100345303C CN100345303C (en) | 2007-10-24 |
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| CNB021274541A Expired - Lifetime CN100345303C (en) | 2002-08-01 | 2002-08-01 | Image sensor microlens set, image sensor and producing method thereof |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100364104C (en) * | 2004-09-14 | 2008-01-23 | 台湾积体电路制造股份有限公司 | CMOS image sensor |
| CN100370618C (en) * | 2004-10-15 | 2008-02-20 | 台湾积体电路制造股份有限公司 | Color image sensor device and method of making the same |
| CN100378955C (en) * | 2004-06-10 | 2008-04-02 | 台湾积体电路制造股份有限公司 | Lens structures suitable for use in image sensors and method for making the same |
| CN100419951C (en) * | 2004-04-13 | 2008-09-17 | 台湾积体电路制造股份有限公司 | Methods for planarization of dielectric layer around metal patterns for optical efficiency enhancement |
| US7704778B2 (en) | 2005-02-23 | 2010-04-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Microlens structure for image sensors |
| CN102024829A (en) * | 2009-09-17 | 2011-04-20 | 联华电子股份有限公司 | Image sensor structure and manufacture method thereof |
| CN102522415A (en) * | 2011-12-22 | 2012-06-27 | 上海宏力半导体制造有限公司 | CMOS (complementary metal oxide semiconductor) image sensor and manufacturing method thereof |
| CN114664876A (en) * | 2022-05-25 | 2022-06-24 | 合肥晶合集成电路股份有限公司 | Image sensor and manufacturing method thereof |
| TWI794398B (en) * | 2018-02-01 | 2023-03-01 | 日商京都半導體股份有限公司 | Semiconductor light receiving element |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5239412A (en) * | 1990-02-05 | 1993-08-24 | Sharp Kabushiki Kaisha | Solid image pickup device having microlenses |
| KR0151258B1 (en) * | 1995-06-22 | 1998-10-01 | 문정환 | Ccd image sensor and fabricating method thereof |
| US6171885B1 (en) * | 1999-10-12 | 2001-01-09 | Taiwan Semiconductor Manufacturing Company | High efficiency color filter process for semiconductor array imaging devices |
-
2002
- 2002-08-01 CN CNB021274541A patent/CN100345303C/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100419951C (en) * | 2004-04-13 | 2008-09-17 | 台湾积体电路制造股份有限公司 | Methods for planarization of dielectric layer around metal patterns for optical efficiency enhancement |
| CN100378955C (en) * | 2004-06-10 | 2008-04-02 | 台湾积体电路制造股份有限公司 | Lens structures suitable for use in image sensors and method for making the same |
| CN100364104C (en) * | 2004-09-14 | 2008-01-23 | 台湾积体电路制造股份有限公司 | CMOS image sensor |
| CN100370618C (en) * | 2004-10-15 | 2008-02-20 | 台湾积体电路制造股份有限公司 | Color image sensor device and method of making the same |
| US7704778B2 (en) | 2005-02-23 | 2010-04-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Microlens structure for image sensors |
| CN102024829A (en) * | 2009-09-17 | 2011-04-20 | 联华电子股份有限公司 | Image sensor structure and manufacture method thereof |
| CN102024829B (en) * | 2009-09-17 | 2014-03-26 | 联华电子股份有限公司 | Image sensor structure and manufacture method thereof |
| CN102522415A (en) * | 2011-12-22 | 2012-06-27 | 上海宏力半导体制造有限公司 | CMOS (complementary metal oxide semiconductor) image sensor and manufacturing method thereof |
| TWI794398B (en) * | 2018-02-01 | 2023-03-01 | 日商京都半導體股份有限公司 | Semiconductor light receiving element |
| CN114664876A (en) * | 2022-05-25 | 2022-06-24 | 合肥晶合集成电路股份有限公司 | Image sensor and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100345303C (en) | 2007-10-24 |
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