CN1271722C - Semiconductor device and mfg. method thereof - Google Patents
Semiconductor device and mfg. method thereof Download PDFInfo
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- CN1271722C CN1271722C CNB031021670A CN03102167A CN1271722C CN 1271722 C CN1271722 C CN 1271722C CN B031021670 A CNB031021670 A CN B031021670A CN 03102167 A CN03102167 A CN 03102167A CN 1271722 C CN1271722 C CN 1271722C
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- hyaline membrane
- semiconductor device
- lens
- optical element
- collector lens
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- 238000000034 method Methods 0.000 title description 18
- 230000003287 optical effect Effects 0.000 claims abstract description 40
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- 239000011737 fluorine Substances 0.000 description 9
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- 238000012546 transfer Methods 0.000 description 6
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
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- BECPQYXYKAMYBN-UHFFFAOYSA-N casein, tech. Chemical compound NCCCCC(C(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(CC(C)C)N=C(O)C(CCC(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(C(C)O)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(COP(O)(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(N)CC1=CC=CC=C1 BECPQYXYKAMYBN-UHFFFAOYSA-N 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
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- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
Abstract
A semiconductor device comprising: a semiconductor substrate having a light receiving or emitting element; a condenser lens provided above the element; a first transparent film provided on the condenser lens for planarization over the condenser lens; a light-transmittable optical element provided above the first transparent film; and a second transparent film interposed between the first transparent film and the optical element; wherein the first transparent film is comprised of a fluorine compound so that the first transparent film is lower in refractive index than the condenser lens and the second transparent film is lower in water- and oil-repellent properties than the first transparent film.
Description
Technical field
The present invention relates to a kind of semiconductor device and manufacture method thereof.The present invention is specifically related to a kind of device that collector lens can be used for solid-state image pickup that has, for example semiconductor device such as CCD (charge coupled device), liquid crystal display device, and the manufacture method of this device.
Background technology
Solid photographic device for example CCD and MOS (metal-oxide semiconductor (MOS)) picture pick-up device has multiple application, for example: mobile phone, scanner, digital duplicating machine and the facsimile machine of digital camera, television camera, band camera function.Owing to be extensive use of these products, the function (increase pixel and improve luminous sensitivity) with regard to corresponding requirements raising solid photographic device reduces volume and reduces price.Since the solid photographic device size reduce increase with pixel, this device further reduced in conjunction with the size of each pixel.Therefore the luminous sensitivity of this solid photographic device (basic function one of requires) reduces, and causes being difficult to obtain distinct image under predetermined illuminance.
The conventional means that addresses the above problem is to provide the miniature lens of a kind of organic polymer to improve luminous sensitivity (referring to, Japanese laid-open patent publication number No.HEI4-12568 (1992) for example) on colour filter.
Another kind of way is to use collector lens (lens in the so-called layer), between light accepting part position and colour filter, provide a kind of laminated shape structure to unite above-mentioned miniature lens and improve luminous sensitivity (referring to, Japanese laid-open patent publication number No.HEI 11-40787 (1999) for example).
A kind of manufacture method of the traditional C CD solid photographic device that has a layer interior lens is with 2 (a)-2 (e) explanations in conjunction with the accompanying drawings hereinafter.Make the cellular construction of CCD solid photographic device with method shown in Fig. 2 (a)-2 (e) and can use the explanation of Fig. 1 profile.
Shown in Fig. 2 (a), on substrate, form light accepting part position 2, read gate position 3, CCD migrating channels (migration position) 4 and passage block 5 by in Semiconductor substrate 1, implanting desired dopant ion.Then, be formed with the transfer electrode 7 of predetermined pattern on Semiconductor substrate 1, insulating barrier 6 is mediate, forms every photosphere 9 in transfer electrode 7, and dielectric isolation layer 8 is between transfer electrode 7 with between photosphere 9.Then, patterning every photosphere 9 on light accepting part position 2, to form opening.
Shown in Fig. 2 (b), on optical confinement layer 9, form layer protecting film 10 and make surface planarization.Diaphragm 10 can be the BPSG (boron phosphorus silicate glass) that for example adopts reflow step to form.
Shown in Fig. 2 (c), on diaphragm 10, form in the layer that one deck has high index of refraction lens material layer 16 with cambium layer in lens 11 (see figure 1)s.Lens material can be in the layer, for example the silicon nitride layer that forms through the plasma CVD method.
Shown in Fig. 2 (d), resist 17 is coated on layer interior lens material layer 16, carries out patterning then, refluxes under 160 ℃ of temperature to form the shape of lens.
Shown in Fig. 2 (e), according to lens material layer 16 in the lens shape dry ecthing layer of resist 17 with lens in the cambium layer 11.
Then, forming one deck on the lens 11 in layer has the hyaline membrane 12 of low-refraction and makes its complanation to improve the convergence rate of lens 11 in the layer.Then on hyaline membrane 12, form colour filter 13, diaphragm 14 and miniature lens 15 in turn.So just formed CCD solid photographic device shown in Figure 1.
Yet above-mentioned classical production process promptly forms on the lens in layer and has the hyaline membrane of low-refraction and directly generate colour filter on hyaline membrane, and following shortcoming is arranged.For making a layer interior lens that required lensing can be provided, generally adopt the material of a kind of organic polymer material as the low-refraction hyaline membrane.
A kind of method of known reduction hyaline membrane refractive index is to adopt a kind of organic polymer material (referring to " polymer ", 34 volumes, in March, 1985) that contains a large amount of fluorine.Yet such fluorine material is high water and oil-resistant, therefore is difficult to combine with other materials.When on the surface of fluorine material hyaline membrane, applying absorbing dye resist (as casein or gel), color resist or resist, all closely related when for example obtaining color resist layer or microlens layer with uneven geometric figure, because the average coating of resist is very difficult.
The colour filter of being made by above-mentioned conventional method is special to exist a kind of like this possibility, promptly in uneven thickness and can break away from hyaline membrane.Especially under the situation of solid photographic device, will cause picture quality inferior, reduce rate of finished products and product quality.
A kind ofly improve hyaline membrane and the close-burning feasible method of other materials is to carry out oxygen plasma treatment in oxygen-containing atmosphere on the surface of hyaline membrane.But only carrying out oxygen plasma treatment is not enough to improving caking property.
Summary of the invention
By aforementioned content as can be known, the present invention relates to a kind of semiconductor device and manufacture method thereof, this method is guaranteeing to improve caking property between the optical elements such as institute's colour filter that provides or miniature lens on hyaline membrane and the hyaline membrane, and can not reduce rate of finished products and product quality.
The invention provides a kind of semiconductor device, comprising: the substrate that is subjected to light or radiated element is arranged; Be positioned at the collector lens that is equipped with on the aforementioned components; Be positioned on the collector lens and be equipped with first hyaline membrane and be used for complanation on collector lens; The diaphanous optical element that on first hyaline membrane, forms; Insert second hyaline membrane between first hyaline membrane and the optical element; Wherein first hyaline membrane is made of fluorochemical, make the hyaline membrane of winning have the refractive index that is lower than collector lens, and second hyaline membrane has the water and oil-resistant that is lower than first hyaline membrane.
Insert between first hyaline membrane and optical element of semiconductor device of the present invention owing to water and oil-resistant is lower than second hyaline membrane of first hyaline membrane, optical element just can combine with first hyaline membrane with the caking property of improvement.
Description of drawings
Fig. 1 is the profile of a pixel of solid photographic device;
Fig. 2 (a)-2 (e) artwork illustrates the manufacture process of conventional solid photographic device;
The explanation of Fig. 3 (a)-3 (e) artwork prepares an embodiment of solid photographic device method according to the present invention;
Fig. 4 is the profile according to a pixel of solid photographic device of embodiment of the present invention.
Embodiment
A kind of semiconductor device of the present invention comprises: the substrate that is subjected to light or light-emitting component is arranged; Be positioned at the collector lens that is equipped with on the aforementioned components; Be positioned on the collector lens and be equipped with first hyaline membrane and be used for complanation on collector lens; The diaphanous optical element that on first hyaline membrane, forms; Insert second hyaline membrane between first hyaline membrane and the optical element; Wherein first hyaline membrane is made of fluorochemical, make the hyaline membrane of winning have the refractive index that is lower than collector lens, and second hyaline membrane has the water and oil-resistant that is lower than first hyaline membrane.
The Semiconductor substrate that semiconductor device of the present invention is used is not particularly limited, but the general substrate that uses should form thereon and is subjected to light or radiated element.The example of substrate comprises the Semiconductor substrate such as silicon, germanium, also can be the compound substrate of SiC, SiGe, GaAs and Al-GaAs, wherein preferred especially silicon substrate.Semiconductor substrate can Doped n-type or p type impurity.Semiconductor substrate can have at least a n type or p type.
Comprised by the example of light or radiated element in the Semiconductor substrate outfit: solid photographic device such as ccd image sensor, CMO imageing sensor, CMD, charge injection device, bipolar imageing sensor and infrared image sensor, photo detector such as photodiode and phototransistor, the light emitting diode of radiated element as in liquid crystal panel, using, the control element of light-permeable.
In order to obtain higher optical convergence rate, preferred collector lens is made of the material with high index of refraction.Collector lens can be made like this, for example, forms silicon nitride film (refractive index is 2.0) or forms polyimide resin film (refractive index is 1.6-1.7) by spin coating by plasma CVD, then film is formed desired lens shape.
The present invention has in the semiconductor device of layer interior lens, and being positioned at provides first hyaline membrane to be used for square meterization on collector lens on the collector lens.First hyaline membrane preferably has the refractive index lower than collector lens.In order to make a layer interior lens that needed lensing can be provided, the refringence of the lens and first hyaline membrane should be not less than 0.2 in its middle level, preferably is not less than 0.3.
In other words, if the refractive index of collector lens for example, when collector lens has identical refractive index with first hyaline membrane, will be lost the effect of collector lens near the refractive index of first hyaline membrane.Therefore, band of the present invention has the preferred fluorochemical formation of first hyaline membrane of the semiconductor device of layer interior lens.That is to say, adopt fluorochemical to form that refractive index that first hyaline membrane can make first hyaline membrane reduces and less than the refractive index of collector lens.No matter be that fluorinated organic compound can be as the fluorochemical materials of first hyaline membrane or contain inorganic fluorine compound.For example first hyaline membrane can comprise the magnesium fluoride layer (refractive index is 1.3-1.4) that forms by sputter, and the fluoroacrylic resin layer (refractive index is 1.3-1.5) that forms by spin coating.
Yet when constituting first hyaline membrane by the fluorochemical of low-refraction, it has water and oil-resistant, therefore with the bad adhesion of other materials.So, second hyaline membrane is inserted between first hyaline membrane and the optical element to improve caking property between the two.Require second hyaline membrane to have surperficial caking property rather than water and oil-resistant with the excellence of other materials.Thereby second hyaline membrane preferably is made of not fluorine-containing material.For example acrylic resin can be used as the material of second hyaline membrane.
In the solid photographic device that the present invention makes, dissimilar resists can both apply evenly that second hyaline membrane and patterning form optical element and without any inconvenience.Certainly, second hyaline membrane is to optical element, has the caking property of improvement as the miniature lens that form on second hyaline membrane or color filter layer etc.
Second hyaline membrane can have the refractive index higher than first hyaline membrane.When with lens or color filter layer during as optical element, the refractive index of second hyaline membrane is preferably between the median of first hyaline membrane and optical element refractive index.Such second hyaline membrane just can not influence the function of collector lens.
Because second hyaline membrane is to form on first hyaline membrane of fluorine material, the caking property between this is two-layer relatively a little less than.But, form caking property inferior between fluorine-containing hyaline membrane and the optical element on the semiconductor device of lens in more weak caking property and the conventional belt between this is two-layer and compare, not problem just.
When on fluorine-containing hyaline membrane, directly generating optical element, require to use the various processing steps that form in the optical element step.That is, any dissimilar resist all can apply on the optical element material layer and carry out patterning.
In conventional belt, among the preparation method of the semiconductor device of lens, can repeat to apply power, so that in forming the optical element step, the optical element material layer is separated from hyaline membrane to the interface between fluorine-containing hyaline membrane and the optical element material layer.Therefore, required caking property should be than the height of first hyaline membrane and second hyaline membrane between fluorine-containing hyaline membrane and the optical element material layer.
In contrast, in the formation step of second hyaline membrane, only need on first hyaline membrane, to form second hyaline membrane, and there is no need to carry out among the present invention as forming the needed various steps of optical element.Therefore there is more weak relatively caking property without a doubt between first, second hyaline membrane.
Among the present invention, after forming first hyaline membrane, in oxygen-containing atmosphere, oxygen plasma treatment is carried out on the first hyaline membrane surface, just can improve the caking property between first, second hyaline membrane, see for details hereinafter.
In the semiconductor device of the present invention, optical element can comprise miniature lens.As selection, the optical element in the semiconductor device of the present invention can comprise a chromatic filter layer.In addition, optical element also can comprise a colour filter and miniature lens that place on the colour filter.
Semiconductor device of the present invention further is included between photo detector or light-emitting component and the collector lens provides the layer of transparent diaphragm to be used for complanation on element.This diaphragm is had no particular limits, get final product so long as constitute by transparent material.For example, this diaphragm can be the BPSG (boron phosphorus silicate glass) that adopts reflux technique to form.
Another aspect of the present invention provides a kind of preparation method to make aforementioned semiconductor device of the present invention, may further comprise the steps: form collector lens having on the Semiconductor substrate that is subjected to light or radiated element; Be used for complanation on collector lens at formation first hyaline membrane on the collector lens, this first hyaline membrane is made of fluorochemical; Form second hyaline membrane on first hyaline membrane, this second hyaline membrane has the water and oil-resistant lower than first hyaline membrane; On second hyaline membrane, form diaphanous optical element then.
Manufacture method of the present invention further may further comprise the steps: after at least one forms in the middle of first hyaline membrane and second hyaline membrane, carry out oxygen plasma treatment in oxygen-containing atmosphere.By carrying out oxygen plasma treatment, the caking property between the caking property between first, second hyaline membrane or second hyaline membrane and the optical element is further improved.The close-burning raising of first or second hyaline membrane be attributable in oxygen-containing atmosphere, to carry out oxygen plasma treatment and the surface that makes hyaline membrane by roughening imperceptibly.
Hereinafter the present invention is described in detail in detail by embodiment with reference to Fig. 3 (a)-3 (e) and Fig. 4.Should understand the present invention and only limit to embodiment absolutely not, comprise for example MOS type solid photographic device of so-called solid photographic device but be widely used in various devices, and the device liquid crystal display device for example of lens in the belt.
Unless otherwise, hereinafter described material of embodiment and device are the general employings of conventional semiconductor device preparation method, need not to provide detailed description.
Fig. 4 is the profile of a pixel of CCD solid photographic device of the interior lens of belt according to an embodiment of the invention.Fig. 3 (a)-3 (e) is the manufacturing step diagram of the CCD solid photographic device of lens in the belt shown in Figure 4.
As shown in Figure 4; the CCD solid photographic device 50 of lens comprises the Semiconductor substrate 31 that photo detector is provided in it in the belt according to an embodiment of the invention; this photo detector has light accepting part position 32; the transparent material diaphragm 40 that on the light accepting part position 32 of photo detector, provides; collector lens (layer in lens) 43 is provided on diaphragm 40, as the colour filter 46 of optical element and miniature lens 48 on first hyaline membrane 44.Second hyaline membrane 45 inserts among first hyaline membranes 44 and the colour filter 46 to improve its caking property.In Fig. 4, correlated digital 49 expression light are incident on the CCD solid photographic device 50.
Referring to Fig. 3 (a)-3 (e), hereinafter will provide the explanation of the manufacture process of CCD solid photographic device 50 shown in Figure 4.
Shown in Fig. 3 (a), on substrate 31, form light accepting part position 32, read gate position 33, CCD migrating channels (migration position) 34 and passage block 35 by being implanted into desired dopant ion in Semiconductor substrate 31.
Then, silica layer forms on Semiconductor substrate 31 by thermal oxidation as insulating barrier 36, has the transfer electrode 37 of predetermined pattern to form on insulating barrier 36.Thereafter, dielectric isolation layer 38 and form in transfer electrode 37 every photosphere 39 carries out patterning and makes on the light accepting part position 32 and form opening.Polysilicon and tungsten silicide can be used as the material of transfer electrode 37.Can be used as is tungsten silicide and tungsten titanium every photosphere 39 materials.
Shown in Fig. 3 (b), on photosphere 39, forming diaphragm 40 and complanation by about 900 ℃ of following backflow BPSG.Then, to form thickness be the photosensitive polyimide resin (as PSI-P-8001, Chisso company is on sale) of 1.0 μ m by being spin-coated on the diaphragm 40, then on heating plate in about 100 ℃ of dryings two minutes.
Shown in Fig. 3 (c), use photoetching technique commonly used in the general semiconductor manufacture method to form polyimide pattern 42 in required position.Shown in Fig. 3 (d), polyimide pattern 42 was placed in the baking oven in nitrogen current about 160 ℃ of following reflux 10 minutes, and in about 350 ℃ of further bakings one hour.Like this, just can obtain thickness is the collector lens 43 of 0.8 μ m.
Shown in Fig. 3 (e), form first hyaline membrane 44 of the transparent fluororesin (as CTX-807, Asahi glass Co., Ltd is on sale) of the about 1.0 μ m of thickness, be used to cover collector lens 43, and flattened.If desired, at the pressure of 80 ℃ temperature, 50mPa and approximately carried out oxygen plasma treatment one minute under the radio-frequency power of 150W, to improve the caking property on first hyaline membrane, 44 surfaces.
With spinner on first hyaline membrane 44 form second hyaline membrane 45 of the thermosetting acrylic resin (as OPTOMER SS-1151, JSR Co., Ltd) of the about 0.5 μ m of thickness thereafter.As needs, at the pressure of 100 ℃ temperature, 40mPa and approximately carried out oxygen plasma treatment one minute under the radio-frequency power of 200W, to improve the caking property on second hyaline membrane, 45 surfaces.
Subsequently, will contain pair resist green, red and blue spectrum feature colorant respectively and be coated on second hyaline membrane 45, and expose and develop to desired pattern to form colour filter 46.Then, acrylic resin (OPTOMER SS-1151 as mentioned above) is coated to the thickness formation diaphragm 47 of 0.7 μ m.After this, on diaphragm 47, form miniature lens 48 with prior art (referring to for example Japanese laid-open patent publication number No.HEI4-12568 (1992)).Like this, just finished CCD solid photographic device 50 shown in Figure 4.
Can determine that because the optical convergence effect of miniature lens 48 and collector lens 43, the light sensitivity that makes said method make CCD solid photographic device 50 improves 2.5 times.
Although what above-mentioned embodiment related to is the CCD solid photographic device, the present invention is applicable to any other solid photographic device, for example the control device of the light-permeable of MOS type solid photographic device and for example liquid crystal display device.
The semiconductor device that the condition that suitable selection forms each member just can obtain having the configuration that requires, for example thickness of collector lens, the thickness of first, second hyaline membrane, the thickness of diaphragm and the thickness of miniature lens.That is the present invention only limits to described semiconductor device of embodiment and preparation method thereof absolutely not, can implement and do not deviate from the present invention's spirit scope in any other mode.
According to the present invention, second hyaline membrane that water and oil-resistant is lower than first hyaline membrane inserts between first hyaline membrane and the optical element, make optical element with the improvement caking property in conjunction with first hyaline membrane.
Claims (10)
1. a semiconductor device comprises: the Semiconductor substrate that is subjected to light or light-emitting component is arranged; The collector lens that is equipped with on the said elements; First hyaline membrane that is equipped with on collector lens is used for complanation on collector lens, the diaphanous optical element that forms on first hyaline membrane; And second hyaline membrane between insertion first hyaline membrane and the optical element; Wherein first hyaline membrane is made of fluorochemical, make the hyaline membrane of winning have the refractive index that is lower than collector lens, and second hyaline membrane has the water and oil-resistant that is lower than first hyaline membrane, refractive index ratio first hyaline membrane that refractive index difference between the collector lens and first hyaline membrane is not less than 0.2, the second hyaline membrane is higher.
2. according to the semiconductor device of claim 1, wherein second hyaline membrane is made of acrylic resin, and first hyaline membrane is made of organofluorine compound.
3. according to the semiconductor device of claim 1, wherein second hyaline membrane is made of acrylic resin, and first hyaline membrane is made of inorganic fluorine compounds.
4. according to the semiconductor device of claim 1, wherein the thickness of second hyaline membrane is littler than first hyaline membrane.
5. according to the semiconductor device of claim 1, wherein optical element comprises a kind of miniature lens.
6. according to the semiconductor device of claim 1, wherein optical element comprises a kind of colour filter.
7. according to the semiconductor device of claim 1, wherein a kind of colour filter and a kind of miniature lens that provide on colour filter are provided optical element.
8. according to the semiconductor device of claim 1, further be included in and be subjected to provide between light or light-emitting component and the collector lens a kind of hyaline membrane complanation to cover described element.
9. the preparation method of the described semiconductor device of claim 1 comprises the steps: to form a kind of collector lens on the Semiconductor substrate that is subjected to light or light-emitting component having; First hyaline membrane that forms on collector lens is used for complanation on collector lens, and first hyaline membrane is made of a kind of fluorochemical; Form second hyaline membrane on first hyaline membrane, second hyaline membrane has the water and oil-resistant that is lower than first hyaline membrane; With on second hyaline membrane, form diaphanous optical element.
10. according to the preparation method of claim 9, further be included in after in the middle of first hyaline membrane and second hyaline membrane at least one form, in oxygen-containing atmosphere, carry out the step of oxygen plasma treatment.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23772/2002 | 2002-01-31 | ||
| JP2002023772A JP3789365B2 (en) | 2002-01-31 | 2002-01-31 | Semiconductor device with in-layer lens and method for manufacturing the same |
| JP23772/02 | 2002-01-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1435892A CN1435892A (en) | 2003-08-13 |
| CN1271722C true CN1271722C (en) | 2006-08-23 |
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| CNB031021670A Expired - Fee Related CN1271722C (en) | 2002-01-31 | 2003-01-30 | Semiconductor device and mfg. method thereof |
Country Status (5)
| Country | Link |
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| US (1) | US6753557B2 (en) |
| JP (1) | JP3789365B2 (en) |
| KR (1) | KR100511074B1 (en) |
| CN (1) | CN1271722C (en) |
| TW (1) | TW580775B (en) |
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| JP3809708B2 (en) | 1997-07-15 | 2006-08-16 | ソニー株式会社 | Solid-state imaging device and manufacturing method thereof |
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2002
- 2002-01-31 JP JP2002023772A patent/JP3789365B2/en not_active Expired - Fee Related
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2003
- 2003-01-28 KR KR10-2003-0005605A patent/KR100511074B1/en not_active IP Right Cessation
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| US6753557B2 (en) | 2004-06-22 |
| JP3789365B2 (en) | 2006-06-21 |
| US20030173599A1 (en) | 2003-09-18 |
| CN1435892A (en) | 2003-08-13 |
| KR20030065377A (en) | 2003-08-06 |
| TW580775B (en) | 2004-03-21 |
| JP2003224251A (en) | 2003-08-08 |
| KR100511074B1 (en) | 2005-08-30 |
| TW200303096A (en) | 2003-08-16 |
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