CN1471343A - High contrast electroluminescent device - Google Patents
High contrast electroluminescent device Download PDFInfo
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- CN1471343A CN1471343A CNA031295304A CN03129530A CN1471343A CN 1471343 A CN1471343 A CN 1471343A CN A031295304 A CNA031295304 A CN A031295304A CN 03129530 A CN03129530 A CN 03129530A CN 1471343 A CN1471343 A CN 1471343A
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Abstract
The device comprises back electrode, electron transport layer, luminous layer, hole transport layer, transparence electrode, extinction interference layer and glass basal plate. The extinction interference layer can be positioned between the transparence electrode and transparent substrate, or in front of the transparent substrate, or in rear of transparent substrate or in rear of main luminous layer. Organic electroluminescence device positioned at side of extinction interference layer or transparent electrode. The extinction interference layer comprises periodical structure composed of three layers: low reflectivity film, transition layer film and high reflectivity film. The invention provides high contrast and lowers cost without changing technique.
Description
Affiliated technical field
The present invention relates to a kind of display device, refer to a kind of device of high-contrast electroluminescent device lighting technology especially.
Background technology
The basic structure of electroluminescent device commonly used comprises transparency electrode, luminescent layer (organic layer or inorganic layer) and metal electrode, and when applying voltage or electric current, luminescent layer sends versicolor light, enters observer's eyes by transparency electrode.Extraneous bias light can produce strong reflection on luminescent layer and metal electrode interface, this part emission light enters observer's eyes, can make display device contrast under the stronger situation of extraneous bias light low significantly, has a strong impact on the display effect of display.The contrast of common electroluminescent device is 5: 1, is difficult to the display effect that reaches satisfied.
Single pixel contrast C is normally defined:
C=(L
Open+ L
Close)/L
Close
Wherein, L
OpenPixel is opened brightness, L when not having extraneous bias light
CloseBrightness when pixel is closed when having extraneous bias light.Improve the brightness that contrast reality will improve luminescent device exactly, reduce of the reflection of extraneous bias light on the luminescent device surface.
A kind of method that reduces the organic electroluminescence device surface reflection is to stick 1/4 wavelength optically-active polaroid on its surface, can obtain 200: 1 high-contrast in this way.But 1/4 wavelength optically-active polaroid absorbs and loss about 60% luminous, and the cost of optically-active polaroid is than higher.
The way that obtains high-contrast in addition is a deposition delustring interfering layer, structure is seen shown in the accompanying drawing 4, this figure is in luminescent device bias light that does not have interfering layer and the luminous situation of device, this method develops (international patent WO01/08240A1) by Canadian LUXELL company, the delustring interfering layer can be produced on (as shown in Figure 5) between luminescent layer and the metal electrode, also can be produced on (as shown in Figure 6) between transparency electrode and the luminescent layer.
If the delustring interfering layer is produced between luminescent layer and the metal electrode, here the delustring interfering layer is made up of the label in the accompanying drawing 59, because the delustring interfering layer is generally with on methods such as the sputter deposition, probably in manufacturing process, destroy luminescent layer, this influence to organic electroluminescence device is especially serious, has increased the difficulty of manufacture craft.And to consider the matching relationship of the lumo energy of delustring interfering layer work function and luminescent layer or transport layer, this will change its work function by the stoicheiometry that changes the delustring interfering layer, has more increased the difficulty of manufacture craft.
If the delustring interfering layer is produced between transparency electrode and the luminescent layer,, consider the matching relationship of the HOMO energy level of delustring interfering layer work function and luminescent layer or transport layer though can not destroy luminescent layer.
Summary of the invention
In order to overcome above-mentioned weak point, main purpose of the present invention aims to provide a kind of electroluminescent device of high-contrast, and its delustring interfering layer is produced between ELD and the substrate.
Another purpose of the present invention is when improving contrast, need not change the manufacture craft of electroluminescent device, and cost of manufacture is also very low.
The technical problem to be solved in the present invention is: how when improving contrast, need not change the manufacture craft of electroluminescent device, and will make technical problem such as cost of manufacture reduction.
The technical solution adopted for the present invention to solve the technical problems is: this device is made up of back electrode, electron transfer layer, luminescent layer, hole transmission layer, transparency electrode, delustring interfering layer and glass substrate etc., and the delustring interfering layer of this device can be positioned at:
A), between transparency electrode and transparent substrates;
B), in the front of transparent substrates;
C), in the back of transparent substrates;
D), in the back of luminescent layer; The delustring interfering layer is between organic electroluminescence device and transparency electrode or the opposite side of the relative transparency electrode of organic electroluminescence device.
The delustring interfering layer of described high-contrast electroluminescent device was made up of the cycle of low reflectivity film, transition layer film, high reflectivity film three-decker and this three-decker.
The low reflectivity film of described high-contrast electroluminescent device, transition layer film, high reflectivity film are known optical thin film material, can be metal, metal oxide or organic substance.
The transparent substrates of described high-contrast electroluminescent device is transparent material or glass.
The luminescent layer of described high-contrast electroluminescent device is organic material or polymeric material.
Delustring wavelength in the delustring interfering layer of described high-contrast electroluminescent device is chosen as 540nm above or all wavelengths of visible waveband or all wavelengths of invisible wave band.
A kind of manufacture method of high-contrast electroluminescent device, the making of described delustring interfering layer basic structure, its job step is:
Step 2. is made transition layer film on low reflectivity film: of the material of substantially transparent, make of sputtering method, measure the refractive index of this layer film material, calculate the thickness of this layer film with formula (1):
2ndsinθ＝Nλ (1)
Wherein, n is the refractive index of thin-film material, and d is the thickness of film, and θ is an incidence angle, and λ is extraneous background light wavelength, and N is an interference level;
Step 4. is manufactured with organic electroluminescence devices at last.
The invention has the beneficial effects as follows: a kind of electroluminescent device of high-contrast can be provided, when improving contrast, need not change the manufacture craft of electroluminescent device, cost of manufacture is low.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.Accompanying drawing 1 is a structural representation of the present invention; Accompanying drawing 2 is delustring schematic diagrames of the present invention; Accompanying drawing 3 is embodiments of the invention structural representations; Accompanying drawing 4 is the schematic diagrames in luminescent device bias light that does not have interfering layer and the luminous situation of device before the present invention; Accompanying drawing 5 is structural representations that delustring interfering layer of the present invention is produced on the luminescent layer back; Accompanying drawing 6 is structural representations that delustring interfering layer of the present invention is produced on the transparency electrode back; Label declaration in the accompanying drawing: 1-transparent substrates; 7-glass base stage; 2a-low reflectivity film; 8-luminescent layer; 2b-transition layer film; 9-delustring interfering layer; The film of 2c-high reflectance; 10-extraneous bias light; 3-organic electroluminescence device; 11-reverberation; 4-metallic cathode; 12-device is luminous; 5-back electrode; 13-interference of light; 6-transparency electrode;
Embodiment
See also shown in the accompanying drawing 1,2,3, device of the present invention is made up of back electrode 5, electron transfer layer, luminescent layer 8, hole transmission layer, transparency electrode 6, delustring interfering layer 9 and glass substrate 7 etc., and the delustring interfering layer 9 of this device can be positioned at:
A), between transparency electrode 6 and transparent substrates 1;
B), in the front of transparent substrates 1;
C), in the back of transparent substrates 1;
D), in the back of luminescent layer 8;
See also shown in the accompanying drawing 1,3, the delustring interfering layer 9 of described high-contrast electroluminescent device was made up of the cycle of low reflectivity film 2a, transition layer film 2b, high reflectivity film 2c three-decker and this three-decker.
The low reflectivity film 2a of described high-contrast electroluminescent device, transition layer film 2b, high reflectivity film 2c are known optical thin film material, can be metal, metal oxide or organic substance.
See also shown in the accompanying drawing 1,2,3, the transparent substrates 1 of described high-contrast electroluminescent device is transparent material or glass.
The luminescent layer 8 of described high-contrast electroluminescent device is organic material or polymeric material.
Delustring wavelength in the delustring interfering layer 9 of described high-contrast electroluminescent device is chosen as 540nm above or all wavelengths of visible waveband or all wavelengths of invisible wave band.
A kind of manufacture method of high-contrast electroluminescent device, the making of described delustring interfering layer 9 basic structures, its job step is:
Step 2. is made transition layer film 2b: of the material of substantially transparent, make of sputtering method, measure this layer film material refractive index, calculate the thickness of this layer film with formula (1):
2ndsinθ＝Nλ (1)
Wherein, n is the refractive index of thin-film material, and d is the thickness of film, and θ is an incidence angle, and λ is the wavelength of extraneous bias light 10, and N is an interference level;
Step 4. is manufactured with organic electroluminescence devices 3 at last.
See also shown in the accompanying drawing 2, the delustring schematic diagram of high-contrast electroluminescent device structure is made up of luminescent layer 8, transparency electrode 6, delustring interfering layer 9 and glass base stage 7 successively on the upper strata of back electrode 5.When extraneous bias light 10 shines organic electroluminescence device 3 surfaces, the extraneous bias light 10 of a part is reflected by the film 2a of antiradar reflectivity, the extraneous bias light 10 of another part is reflected into reverberation 11 by transition layer film 2b by the film 2c of high reflectance, the bias light of this two parts reflection produces delustring interferes, and then improves the contrast of electroluminescent device; Interference of light 13 is arranged in the delustring interfering layer 9, device luminous 12 is arranged in the luminescent layer 8.The wavelength of extraneous bias light 10 is taken as 540nm, and this wavelength is the centre wavelength of visible light.
See also shown in the accompanying drawing 3, delustring interfering layer 9 of the present invention also can be made in the another side of substrate, the i.e. another side of organic electroluminescence device 3.
Embodiments of the invention are as follows: following is symbol description in the embodiment of the invention: ITO: i.e. tin indium oxide (Indium Tin Oxide); TPD:(N, N '-diphenyl-N, N '-two (3-aminomethyl phenyl)-1,1-biphenyl-4,4 '-diamines)/Alq (8-hydroxyquinoline aluminum);
NPB: ' N, N dinaphthyl-N, N diphenyl-4,4 benzidine; Embodiments of the invention 1:
Device architecture: glass/ (CrO
x/ ITO/Cr)
n/ ITO/TPD/Alq/Mg:Ag (magnesium silver alloy).In this device, CrO
xAs low reflectivity film, ITO is as transition layer film, and Cr is as high reflectivity film, CrO
xFilm and ITO film are made of the method for reactive sputtering, and Cr makes of the method for sputter, and this trilamellar membrane is formed the delustring interfering layer, and n represents the repetition period of delustring interfering layer, and the n value in the present embodiment gets 1.ITO/NPB/Alq/Mg:Ag is an electroluminescent device, and ITO makes transparent anode, and TPD makes hole transmission layer, Alq makes electron transfer layer and luminescent layer, the MgAg alloy is done metallic cathode, and ITO makes of the method for reactive sputtering, and other several layer films have the method for evaporation to make.Extraneous bias light is at (CrO
x/ ITO/Cr) the delustring interfering layer of composition produces the delustring interference, and then improve contrast.Wherein: CrO
x(chromated oxide) Mg:Ag (magnesium silver alloy) glass (glass) embodiments of the invention 2:
Device architecture: glass/ (SiO
2/ TiO
2)
n/ ITO/CuPc/NPB/Alq/LiF/Al.In this device, SiO
2As transition layer film, TiO
2As high reflectivity film, SiO
2And TiO
2Method with sputter is made, and this two tunic is formed the delustring interfering layer, and n represents the repetition period of delustring interfering layer, and the n value in the present embodiment gets 3.ITO/CuPc/NPB/Alq/LiF/Al is an electroluminescent device, and ITO makes transparent anode, and CuPc makes hole injection layer, NPB makes hole transmission layer, and CuPc makes hole injection layer, and Alq makes electron transfer layer and luminescent layer, LiF makes electron injecting layer, and metallic aluminium Al does metallic cathode.Extraneous bias light is at (SiO
2/ TiO
2)
3The delustring interfering layer of forming produces delustring interferes, and then improves contrast.Wherein: SiO
2: silicon dioxide TiO
2: titanium dioxide CuPc: phthalocyanine bronze LiF: lithium fluoride embodiments of the invention 3:
Device architecture: glass/ (CrO
x/ ITO/Cr)
n/ ITO/PEDOT/PPV/Ca/Al.In this device, CrO
xAs low reflectivity film, ITO is as transition layer film, and Cr is as high reflectivity film, CrO
xFilm and ITO film are made of the method for reactive sputtering, and Cr makes of the method for sputter, and this trilamellar membrane is formed the delustring interfering layer, and n represents the repetition period of delustring interfering layer, and the n value in the present embodiment gets 1.ITO/PEDOT/PPV/Ca/Al is an electroluminescent device, ITO makes transparent anode, PEDOT makes hole transmission layer, PPV makes electron transfer layer and luminescent layer, calcium metal Ca/Al does metallic cathode, PEDOT film and PPV film are with being coated with or the method for inkjet printing is made, and metal Ca/Al electrode is made of the method for evaporation.Extraneous bias light is at (CrO
x/ ITO/Cr) the delustring interfering layer of composition produces the delustring interference, and then improve contrast.Wherein:
PEDOT: poly-ethylidene dioxy thiophene embodiments of the invention 4:
Device architecture: glass/ (SiO
2/ TiO
2)
n/ ITO/PEDOT/PPV/Ca/Al.In this device, SiO
2As transition layer film, TiO
2As high reflectivity film, SiO
2And TiO
2Method with sputter is made, and this two tunic is formed the delustring interfering layer, and n represents the repetition period of delustring interfering layer, and the n value in the present embodiment gets 3.ITO/PEDOT/PPV/Ca/Al is an electroluminescent device, ITO makes transparent anode, PEDOT makes hole transmission layer, PPV makes electron transfer layer and luminescent layer, metal Ca/Al does metallic cathode, PEDOT film and PPV film are with being coated with or the method for inkjet printing is made, and metal Ca/Al electrode is made of the method for evaporation.Extraneous bias light is at (CrO
x/ ITO/Cr) the delustring interfering layer of composition produces the delustring interference, and then improve contrast.
Claims (7)
1. high-contrast electroluminescent device, this device has back electrode, electron transfer layer, luminescent layer, hole transmission layer, transparency electrode, delustring interfering layer and glass substrate, it is characterized in that: the delustring interfering layer is positioned at:
A), between transparency electrode and transparent substrates;
B), in the front of transparent substrates;
C), in the back of transparent substrates;
D), in the back of luminescent layer; Electroluminescent device is positioned at a side of delustring interfering layer or a side of transparency electrode.
2. high-contrast electroluminescent device according to claim 1 is characterized in that: described delustring interfering layer was made up of the cycle of low reflectivity film, transition layer film, high reflectivity film structure and this three-decker.
3. high-contrast electroluminescent device according to claim 2 is characterized in that: described low reflectivity film, transition layer film, high reflectivity film are the optical thin film material, are metal, metal oxide or organic substance.
4. high-contrast electroluminescent device according to claim 1 is characterized in that: described transparent substrates is transparent material or glass.
5. high-contrast electroluminescent device according to claim 1 is characterized in that: described luminescent layer is organic material or polymeric material.
6. according to claim 1,2 described high-contrast electroluminescent devices, it is characterized in that: the delustring wavelength in the described delustring interfering layer is chosen as 540nm above or the wavelength of visible waveband or the wavelength of invisible wave band.
7. the manufacture method of a high-contrast electroluminescent device is characterized in that: the making of described delustring interfering layer basic structure, and its job step is:
Step 1. is made low reflectivity film: the film of making antiradar reflectivity on substrate of sputtering method, make the refractive index that parameter is adjusted film with adjusting, its thickness is by calculating, and when a part of extraneous bias light was reflected by this layer film, a part of extraneous bias light was by this layer film;
Step 2. is made transition layer film: of the material of substantially transparent, make of sputtering method, measure this layer film material refractive index, calculate the thickness of this layer film with formula (1):
2ndsinθ＝Nλ (1)
Wherein, n is the refractive index of thin-film material, and d is the thickness of film, and θ is an incidence angle, and λ is extraneous background light wavelength, and N is an interference level;
Step 3. is made the film of high reflectance: this layer film is with the light emission by transition layer film, forms and interferes, and offsets extraneous bias light;
The last electroluminescent device of making of step 4..
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031295304A CN100485992C (en) | 2003-06-26 | 2003-06-26 | High contrast electroluminescent device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031295304A CN100485992C (en) | 2003-06-26 | 2003-06-26 | High contrast electroluminescent device |
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| Publication Number | Publication Date |
|---|---|
| CN1471343A true CN1471343A (en) | 2004-01-28 |
| CN100485992C CN100485992C (en) | 2009-05-06 |
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|---|---|---|---|
| CNB031295304A Expired - Fee Related CN100485992C (en) | 2003-06-26 | 2003-06-26 | High contrast electroluminescent device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101681956B (en) * | 2007-03-08 | 2012-04-25 | 伊斯曼柯达公司 | Quantum dot light emitting device |
| CN102856351A (en) * | 2012-06-14 | 2013-01-02 | 友达光电股份有限公司 | Organic electroluminescent display panel and manufacturing method thereof |
| CN103928634A (en) * | 2014-03-24 | 2014-07-16 | 京东方科技集团股份有限公司 | Organic electroluminescence device, and manufacturing method and display device thereof |
-
2003
- 2003-06-26 CN CNB031295304A patent/CN100485992C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101681956B (en) * | 2007-03-08 | 2012-04-25 | 伊斯曼柯达公司 | Quantum dot light emitting device |
| CN102856351A (en) * | 2012-06-14 | 2013-01-02 | 友达光电股份有限公司 | Organic electroluminescent display panel and manufacturing method thereof |
| CN102856351B (en) * | 2012-06-14 | 2015-05-13 | 友达光电股份有限公司 | Organic electroluminescent display panel and manufacturing method thereof |
| CN103928634A (en) * | 2014-03-24 | 2014-07-16 | 京东方科技集团股份有限公司 | Organic electroluminescence device, and manufacturing method and display device thereof |
| CN103928634B (en) * | 2014-03-24 | 2016-05-25 | 京东方科技集团股份有限公司 | Organic electroluminescence device and preparation method thereof, display unit |
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| Publication number | Publication date |
|---|---|
| CN100485992C (en) | 2009-05-06 |
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Owner name: HAERBIN DONGKE OPTO-ELECTRICAL SCIENCE CO., LTD. Free format text: FORMER OWNER: SUN RUNGUANG Effective date: 20080307 |
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Effective date of registration: 20080307 Address after: China Harbin Development Zone Yingbin Road Central District Taihang Road No. 8 software development base building complex, zip code: 150010 Applicant after: Harbin Dongke Photoelectricity Technology Co., Ltd. Address before: Room 102, room 23, 475 lane, Tacheng Road, Shanghai, Jiading District: 201800 Applicant before: Sun Runguang |
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