CN100345321C - Light emitting element with anti-reflection member - Google Patents
Light emitting element with anti-reflection member Download PDFInfo
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- CN100345321C CN100345321C CNB031382630A CN03138263A CN100345321C CN 100345321 C CN100345321 C CN 100345321C CN B031382630 A CNB031382630 A CN B031382630A CN 03138263 A CN03138263 A CN 03138263A CN 100345321 C CN100345321 C CN 100345321C
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Abstract
The present invention provides a light emitting element with an anti-reflection member, which comprises an anti-reflection member, a second electrode and a light emitting later between a first electrode and the second electrode, wherein the anti-reflection member comprises a reflection layer and the first electrode. The first electrode of the present invention simultaneously has an electrode effect and an anti-reflection effect. Ambient light is reflected by the first electrode to obtain first reflection light and reflected by the reflection layer to obtain second reflection light. Phase differences are formed between the first reflection light and the second reflection light so as to weaken the reflection of the ambient light.
Description
Technical field
The present invention relates to a kind of light-emitting component, be specifically related to a kind of with the light-emitting component of an anti-reflecting layer as electrode with antireflection member.
Background technology
Organic Light Emitting Diode (OLED; Organic light emitting diode) for using the light-emitting diode of organic layer as active layer (active layer), gradually, be used in recent years on the flat panel display (flatpanel display), it has advantages such as low voltage operating, high brightness, in light weight, slim, wide view angle and high-contrast.
Yet the easy reflect ambient light of organic illuminating element causes the element contrast not enough, influences element function.In order to improve brightness contrast (luminance contrast ratio), general modal mode is to paste polaroid (polarizer) on light-emitting area, but the method will make brightness significantly reduce, and approximately only is reduced to and remains 30%.Reach required brightness, must significantly improve operating voltage, if will shorten component life so again.
Therefore, also develop and directly utilize the vacuum coating mode on organic illuminating element, to plate one or more layers film, to reduce the environment reflection of light as anti-reflecting layer (anti-reflecting coating).For example, United States Patent (USP) the 5th, 049, No. 780 a kind of light-emitting components of announcement with antireflection member, this document points out to utilize principle of optical interference can produce this antireflection member.Fig. 1 is the generalized section of traditional light-emitting component with antireflection member.See also Fig. 1, after plating an antireflection member 200 earlier on the substrate 100, plate an anode (anode) 300, one luminescent layers (emitting layer more in regular turn; EL) 400 and one negative electrode (cathode) 500.This antireflection member 200 comprises a metallic reflector 210, one transparency conducting layers 220 and half transparent thin metal layer 230.This patent utilization principle of optical interference, suitably select the material and the thickness of each layer in the antireflection member, make by 230 reflected ambient L11 of translucent thin metal level and between 210 reflected ambient L12 of metallic reflector phase difference (phasedifference) is arranged.So, can improve brightness contrast, be more than 50% of former brightness thereby can keep brightness.
United States Patent (USP) the 6th, 429,451 propose, and are provided with by the formed reflection of n N-type semiconductor N material to lower layer (reflection-reducing layer) between reflection-type negative electrode (light-reflective cathode) and electron transfer layer (electron transporting).Whereby, can reduce the reflection of surround lighting, and can improve brightness contrast from negative electrode.The n N-type semiconductor N material that is suitable for can be ZnO or ZnS.
Summary of the invention
One of the technical problem to be solved in the present invention is for providing a kind of light-emitting component with antireflection member of novelty.
Another technical problem that will solve of the present invention is for using a rete that has electrode and antireflection effect simultaneously, so as to omitting manufacturing process one, to save cost of manufacture.
It is to utilize principle of interference to make the antireflection member that the present invention also has a technical problem that will solve, and reverberation is offseted each other, thereby weaken the environment reflection of light, improves the brightness contrast of light-emitting component.
According to the present invention, the technical scheme that addresses the above problem is: the light-emitting component of the antireflection member that the present invention has comprises: an antireflection member, this member comprises a reflector, the transparency conducting layer of one first electrode and between above-mentioned reflector and above-mentioned first electrode, wherein the reflectivity in this reflector is higher than 80%, its thickness is between 400 to 5000 , the penetrance of this transparency conducting layer is higher than 80%, its thickness is between 300 to 3000 , and the thickness of above-mentioned first electrode is between 50 to 1000 ; One second electrode; And a luminescent layer between above-mentioned first electrode and second electrode.First electrode has electrode and antireflecting effect simultaneously.Surround lighting by first electrode reflection and one first reverberation, and surround lighting be reflected layer reflection and one second reverberation, phase difference is arranged between first reverberation and second reverberation, thereby can weaken the environment reflection of light.
Description of drawings
Fig. 1 is the generalized section of traditional light-emitting component with antireflection member;
Fig. 2 is the generalized section of the light-emitting component with antireflection member of the preferred embodiment for the present invention.
The drawing reference numeral explanation
100～substrate,
200～antireflection member,
210～metallic reflector,
220～transparency conducting layer,
230～translucent thin metal level,
300～anode,
400～organic luminous layer (EL),
500～negative electrode
L11～by 230 reflected ambient of translucent thin metal level,
L12～by 210 reflected ambient of metallic reflector.
10～substrate,
20～antireflection member,
21～reflector,
22～transparency conducting layer,
23～the first electrodes,
40～luminescent layer,
50～the second electrodes,
L1～first reverberation,
L2～second reverberation.
Embodiment
Fig. 2 is the light-emitting component with antireflection member of the present invention's one preferred implementation.See also Fig. 2, the light-emitting component with antireflection member of the present invention comprises: a substrate 10, be arranged on the antireflection member 20 on the substrate 10, and be arranged on the luminescent layer 40 on the antireflection member 20, and be arranged on the electrode 50 on the luminescent layer 40.
The invention is characterized in that the anti-reflecting layer of one deck as electrode arranged in the antireflection member 20, this anti-reflecting layer has antireflection and simultaneously as the effect of electrode.Know clearly it, antireflection member 20 comprises a reflector 21, one transparency conducting layers 22 and one first electrode 23, and they all can use sputtering method (sputtering) or electron gun evaporation (e-gun evaporation) to form.
The reflectivity in reflector 21 preferably is higher than 80%, and its thickness can be between 400 to 5000 .The material that is applicable to reflector 21 can be metal, Al for example, Ag, Au, Cr, the metal that the Mo isoreflectance is higher.The penetrance of transparency conducting layer 22 preferably is higher than 80%, and its thickness can be between 300 to 3000 .The material that is applicable to transparency conducting layer 22 can be ITO (indium tin oxide; Indium tin oxide), IZO (indium zinc oxide; Indium-zinc oxide), Al:SiO
2, or Cr:SiO
2First electrode 23 also has the antireflection effect except as the electrode, and has the semi-reflection and semi-transparent effect.In order to have the semi-reflection and semi-transparent effect, first electrode 23 is preferably thinner, and thickness is preferably between 50 to 1000 .
Antireflection member 20 of the present invention has interference of light characteristic.When surround lighting incides light-emitting component of the present invention, first electrode 23 can be with component environment light reflection and one first reverberation L1, and component environment light is penetrated into the transparency conducting layer 22 of its lower floor, be reflected again layer 21 reflection and one second reverberation L2.Utilize principle of optical interference, can suitably select the material and the thickness of each layer in the antireflection member, make win reverberation L1 and the second reverberation L2 that phase difference be arranged, so, can weaken the environment reflection of light, to improve brightness contrast.Preferred situation is that it is 180 degree that the phase difference of regulating the first reverberation L1 and the second reverberation L2 makes it.The present invention can weaken the environment reflection of light significantly, so element need not increase substantially operating voltage and can improve brightness contrast, helps prolonging the life-span of light-emitting component.
Compare with traditional light-emitting component that utilizes principle of interference to weaken reflection of ambient light, first electrode of the present invention also has antireflecting effect except the function with electrode, can make the reflection of component environment light, and component environment light penetrates.Therefore, for needing making one deck first electrode and one deck semi-reflection and semi-transparent layer in the conventional art, the present invention only need make one deck first electrode, promptly have a dual effect, thus can omit manufacturing process one, thereby can save cost of manufacture.
When first electrode 23 is a negative electrode, when second electrode 50 was anode, the work function of first electrode 23 preferably between 2eV to 3eV, for example can be between the 2.6eV to 2.7eV.The material that is suitable as first electrode 23 (negative electrode) can be a metal, Ca for example, Mg, Li, Al, or Al/Li alloy.
Comprehensively above-mentioned, antireflection member of the present invention has a reflector and one first electrode, and first electrode has antireflection and as the dual-use function of electrode.The present invention makes to be reflected layer institute's reflected ambient and between first electrode institute reflected ambient phase difference to be arranged according to interference of light principle, so as to weakening the environment reflection of light, improves the brightness contrast of element.Moreover the present invention only need make one deck first electrode, promptly has antireflection and as the dual-use function of electrode, therefore can omit manufacturing process one, thereby can save cost of manufacture.
Though the present invention discloses as above with preferred implementation; right its is not in order to restriction the present invention; those of ordinary skill in the art; under the situation that does not break away from design of the present invention and scope; can change and retouching, so protection scope of the present invention is when being as the criterion with the claimed scope of accompanying claims.
Claims (5)
1. light-emitting component with antireflection member, it comprises:
One antireflection member, it comprises a reflector, the transparency conducting layer of one first electrode and between above-mentioned reflector and above-mentioned first electrode, wherein the reflectivity in this reflector is higher than 80%, its thickness is between 400 to 5000 , the penetrance of this transparency conducting layer is higher than 80%, its thickness is between 300 to 3000 , and the thickness of above-mentioned first electrode is between 50 to 1000 ;
One second electrode; And
One luminescent layer between above-mentioned first electrode and second electrode,
Wherein surround lighting by first electrode reflection and one first reverberation, and surround lighting by above-mentioned reflective layer reflects and one second reverberation, phase difference is arranged between first reverberation and second reverberation, thereby can weaken the environment reflection of light.
2. the light-emitting component with antireflection member as claimed in claim 1, wherein above-mentioned reflector is a metal level.
3. the light-emitting component with antireflection member as claimed in claim 1, wherein above-mentioned luminescent layer is an organic material layer.
4. the light-emitting component with antireflection member as claimed in claim 3, wherein above-mentioned first electrode is an anode, and its work function is greater than 4.6eV, and this first electrode is made by metal or conductivity ceramics, wherein this first electrode is by Al, Cr, Mo, Pt, Ni, Au, TiN or CrN make; And above-mentioned second electrode is a negative electrode.
5. the light-emitting component with antireflection member as claimed in claim 3, wherein above-mentioned first electrode is a negative electrode, and its work function is between the 2eV to 3eV, and this first electrode is made of metal, and wherein this first electrode is by Ca, Mg, Li, Al, or the Al/Li alloy is made; And above-mentioned second electrode is an anode.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031382630A CN100345321C (en) | 2003-05-30 | 2003-05-30 | Light emitting element with anti-reflection member |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB031382630A CN100345321C (en) | 2003-05-30 | 2003-05-30 | Light emitting element with anti-reflection member |
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| CN1553527A CN1553527A (en) | 2004-12-08 |
| CN100345321C true CN100345321C (en) | 2007-10-24 |
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| CNB031382630A Expired - Fee Related CN100345321C (en) | 2003-05-30 | 2003-05-30 | Light emitting element with anti-reflection member |
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI324491B (en) | 2006-08-16 | 2010-05-01 | Au Optronics Corp | Low-reflection self-illumination unit display pixel structure |
| CN100426519C (en) * | 2006-09-11 | 2008-10-15 | 友达光电股份有限公司 | Pixel unit structure for autoluminescence unit display with low reflectance |
| CN103137878A (en) * | 2011-11-29 | 2013-06-05 | 海洋王照明科技股份有限公司 | Organic electroluminescence component and preparation method thereof |
| US9000665B2 (en) * | 2012-03-20 | 2015-04-07 | Lg Display Co., Ltd. | Organic light emitting diode display device and method of manufacturing the same |
| CN103367388B (en) * | 2012-03-30 | 2016-08-03 | 群康科技(深圳)有限公司 | Organic light emitting diode display |
| KR102028680B1 (en) * | 2013-03-20 | 2019-11-05 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
| CN104851981B (en) * | 2014-02-18 | 2018-02-06 | 财团法人工业技术研究院 | Blue light emitting element and light emitting element |
| TWI553381B (en) | 2015-02-09 | 2016-10-11 | 群創光電股份有限公司 | Display panel |
| CN105990371B (en) * | 2015-02-09 | 2021-03-19 | 群创光电股份有限公司 | Display panel |
| CN110767660B (en) | 2018-07-24 | 2022-09-16 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display panel |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5049780A (en) * | 1988-12-02 | 1991-09-17 | National Research Council Of Canada | Optical interference, electroluminescent device having low reflectance |
| US6429451B1 (en) * | 2000-05-24 | 2002-08-06 | Eastman Kodak Company | Reduction of ambient-light-reflection in organic light-emitting devices |
| US20030067266A1 (en) * | 2001-10-10 | 2003-04-10 | Lg. Philips Lcd Co., Ltd. | Organic electroluminescent device |
-
2003
- 2003-05-30 CN CNB031382630A patent/CN100345321C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5049780A (en) * | 1988-12-02 | 1991-09-17 | National Research Council Of Canada | Optical interference, electroluminescent device having low reflectance |
| US6429451B1 (en) * | 2000-05-24 | 2002-08-06 | Eastman Kodak Company | Reduction of ambient-light-reflection in organic light-emitting devices |
| US20030067266A1 (en) * | 2001-10-10 | 2003-04-10 | Lg. Philips Lcd Co., Ltd. | Organic electroluminescent device |
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| CN1553527A (en) | 2004-12-08 |
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Granted publication date: 20071024 Termination date: 20180530 |