CN1471137A - High dielectric coefficient gate dielectric material hafnium nitrogen aluminate film and preparing method thereof - Google Patents
High dielectric coefficient gate dielectric material hafnium nitrogen aluminate film and preparing method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000003989 dielectric material Substances 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 42
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
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- 239000000919 ceramic Substances 0.000 claims abstract description 16
- 239000000843 powder Substances 0.000 claims abstract description 4
- 238000002360 preparation method Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910003855 HfAlO Inorganic materials 0.000 claims 1
- 238000000280 densification Methods 0.000 claims 1
- 238000002203 pretreatment Methods 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 abstract description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005054 agglomeration Methods 0.000 abstract 1
- 230000002776 aggregation Effects 0.000 abstract 1
- 150000004645 aluminates Chemical class 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910000449 hafnium oxide Inorganic materials 0.000 abstract 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 49
- 239000004065 semiconductor Substances 0.000 description 7
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- 238000004549 pulsed laser deposition Methods 0.000 description 4
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- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
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Abstract
Through ball mill mixing, the powder of hafnium oxide and alumina is cold pressed to piece. Then, ceramic target of hafnium aluminate is made through agglomeration under high temperature. Based on pulse laser deposit (PLD) technique, in growth cabinet with high purity nitrogen being filled, using laser to peel off ceramics target of hafnium aluminate produces laser plasma deposited on silicon substrate to form amorphous hafnium nitronic aluminate film. The film possesses the features of high thermodynamic stability, higher dielectric coefficient and low leakage current. The performance index of the product reaches advanced stage of international similar products and meets practical application requirement of MOSFET with not high power consumption.
Description
One, technical field
The invention belongs to the microelectronic material field, specifically relate to be applied to high-dielectric coefficient grid dielectric material in the Metal-oxide-semicondutor field effect transistor (MOSFET) and preparation method thereof.
Two, background technology
In the silicon-based semiconductor integrated circuit, Metal-oxide-semicondutor field effect transistor (MOSFET) is the elementary cell that constitutes mnemon, microprocessor and logical circuit.The size of its volume is directly connected to the integrated level of very lagre scale integrated circuit (VLSIC).By famous Moore's Law, to double every the integrated level of 18 months integrated circuits.The prediction of the international semiconductor technology road figure (ITRS) that announces according to international semiconductor TIA in 1999, by 2005, it is ripe that the photoetching technique of 0.1 μ m will be tending towards, and among the corresponding M OSFET as the SiO of gate dielectric film
2The thickness of layer will reduce to 1.0-1.5nm; And will reach 0.05 μ m to the level of photoetching technique in 2011, the SiO of corresponding equivalence
2The thickness of gate dielectric film will reduce to 0.6-0.8nm.But Quantum mechanical calculation shows works as SiO
2When the thickness of gate dielectric film will reduce to 2nm, grid knot that tunnel effect causes and the leakage current between the silicon chip had promptly arrived the degree that can not allow.In order to address this problem, must use material to replace existing SiO with higher dielectric coefficient and low-leakage current
2This has become the bottleneck that restricts MOSFET integrated level raising in following 10 years, and has caused the very big concern and the extensive studies of various countries semiconductor educational circles and association area.People are accustomed to being equivalent to how thick SiO
2The equivalent oxide thickness (EOT) of layer is described the thickness of high-dielectric coefficient grid dielectric layer (high-k gate dielectric), and its expression formula is:
EOT=t
SiOx+ t
High-k oxide* ε
SiO2/ ε
High-k oxideT wherein
SiOxThe SiO that causes for interfacial reaction
xThe thickness of layer, t
High-k oxideBe the actual (real) thickness of high-dielectric coefficient dielectric layer, ε
SiO2And ε
High-k oxideBe respectively SiO
2With the dielectric dielectric coefficient of high-dielectric coefficient, wherein ε
SiO2=3.9.In order to reduce leakage current, should make the actual (real) thickness of gate dielectric layer become big, but corresponding EOT also can increase.At this moment the approach that lowers EOT has two: one, selects for use the bigger material of dielectric coefficient as the gate dielectric membrane material, and the 2nd, the SiO that try one's best minimizing and even elimination form at the interface
xLayer.
The basic principle that present stage is sought high-dielectric coefficient grid dielectric material is:
(1) electrical properties: the broad stopband, cation valence is few, low defective and interface state density.
(2) dielectric property: high-dielectric coefficient (＞15), and more slow with temperature and frequency change, low-leakage current.
(3) thermal stability: can bear more than 800 ℃ 2 minutes short annealing heat treatment at least; Preferably can bear the requirement (900～1000 ℃, 10～30 seconds) of traditional CMOS high-temperature post-treatment and keep can and SiO
2The high heating power of analogy is learned stability.
(4) chemical property and Si substrate compatibility do not form or only form the SiO of one or two atomic layer at the interface
x, compatible mutually with grid material, interfacial reaction does not take place.Its preparation technology will with existing CMOS process compatible.
(5) thus for the defective that reduces gate dielectric film reduces leakage current, people it is generally acknowledged that film is preferably epitaxy single-crystal film or amorphous film.The former preparation is more difficult, thereby amorphous film becomes object of greatest concern.
Many oxides such as Ta
2O
5, TiO
2, ZrO
2, HfO
2, Al
2O
3Deng just being studied widely as the candidate material.But they all can not satisfy alternative SiO fully
2Whole requirements.HfO
2Higher dielectric constant (20～25) is arranged, also be unique energy of finding at present with CMOS technology in the compatible mutually metal oxide of polygate electrodes, be about 500 ℃ but its crystallization temperature is low.Polycrystal film can cause high crystal boundary leakage current.Simultaneously, HfO
2Bigger oxygen diffusion rate is arranged, thereby in the preparation process of film, oxygen meeting and pasc reaction in the surrounding environment cause the formation of low-k boundary layer and reduce the electric capacity of entire device.Opposite with it, Al
2O
3Very high crystallization temperature and low-down oxygen diffusion rate are arranged, but dielectric constant less be 8.9.We utilize these two kinds of oxides advantage separately, introduce the nitrogen preparation and have the very nitrogen hafnium (HfAl of high chemical stability and medium dielectric constant
2O
5-xN
y) material.
Three, summary of the invention
1, goal of the invention
The objective of the invention is to provide a kind of Metal-oxide-semicondutor field effect transistor (MOSFET) high-dielectric coefficient grid dielectric material that is applied to prepare a kind of high-dielectric coefficient grid dielectric material nitrogen hafnium aluminate film HfAl
2O
5-xN
y(wherein x and y are a small amount of less than 1, hereinafter to be referred as HAON) and preparation method thereof.
2, technical scheme
A kind of high-dielectric coefficient grid dielectric material nitrogen hafnium aluminate film is characterized in that its molecular formula is HfAl
2O
5-xN
y(wherein x and y are a small amount of less than 1, and nitrogen-atoms accounts for atom percentage concentration in molecule be 5.28%).
A kind of preparation method who is applied to the grid dielectric material nitrogen hafnium aluminate film of Metal-oxide-semicondutor field effect transistor (MOSFET) is characterized in that adopting pulsed laser deposition (PLD) technology, uses HfAl
2O
5Ceramic target, preparation nitrogen hafnium aluminate film in blanket of nitrogen, concrete steps are as follows:
(1) with HfAl
2O
5Ceramic target is placed on the target platform 1, silicon substrate 6 is placed on the substrate table 5, resistance furnace 7 is placed on the substrate table below, target platform 1, substrate table 5, substrate 6, resistance furnace 7 all are placed in the growth room 8, the hole 9 that a logical nitrogen is arranged in the left side, growth room, place lens 3 before the right upper portion opening, lower openings connects vacuum pump 4 (mechanical pump and molecular pump).
(2) with vacuum pump 4 growth room 8 is vacuumized and reach 1 * 10
-2Below the Pa, in growth room 8, charge into high pure nitrogen (99.999%) from air vent hole 9 then, and make maintenance 20PaN in the growth room
2Atmosphere.
(3) with resistance furnace 7 heated substrate platforms 5, make silicon substrate material 6 reach design temperature 300-800 ℃.
(4) the starting impulse laser 2, by condenser lens 3 laser beam focused on HfAl
2O
5On the ceramic target, with pulse laser stripped ceramic target, the laser plasma of generation is deposited on the silicon substrate and makes the HAON film, and cools to room temperature in position.In film-forming process, target platform 1 and substrate table 5 guarantee the laser beam plasma with constant speed rotation, are deposited on equably on the silicon substrate 6, to make the uniform film of thickness.
(5) with film with short annealing heat-treatment furnace in blanket of nitrogen 800-1000 ℃, short annealing 0.5-3 minute.
HfAl described in the above-mentioned steps (1)
2O
5Ceramic target is with the solid phase reaction method preparation, promptly uses pure HfO
2And Al
2O
3Powder by 1: 1 mixed in molar ratio, all mixed through the ball mill ball milling in 18-24 hour, mixed-powder was cold-pressed into the disk of Φ 21mm * 4mm under 12-16MPa pressure.Then, in cabinet-type electric furnace, disk under 1400-1600 ℃ of temperature, was made in sintering 5-8 hour.The pressure 14MPa that preferably colds pressing, 1500 ℃ of preferred sintering temperatures, sintering time is 6 hours.The selection of backing material and processing: select n type silicon chip Si (100) for use, resistivity 2-3 Ω .cm, at first n-Si (100) substrate is put into acetone or alcohol cleaned 3-5 minute in ultrasonic device, twice of continuous wash is then deionized water ultrasonic cleaning 3-5 minute, with the deionized water rinsing number that flows time, use the SiO on hydrofluoric acid solution erosion removal surface at last again
2
In the above-mentioned steps (2), charge into the nitrogen of growth room, preferred 20Pa high pure nitrogen (99.999%) in thin film growth process.
Resistance furnace in the above-mentioned steps (3) can any temperature keep constant between 20 ℃-900 ℃, the preferred settings temperature of heating silicon substrate is 500 ℃.
Said pulse laser is KrF (KrF) excimer laser of selecting for use in the above-mentioned steps (4), and wavelength is 248nm, pulse duration 30ns, single pulse energy 50-600mJ, energy density 2.0J/cm
2
Above-mentioned steps (5) is as the 900 ℃ of short annealings 1 minute in nitrogen atmosphere of the preferred short annealing heat-treatment furnace of the aftertreatment technology of the film of electrical measurement.
The instrument that the above HAON film that makes carries out structural analysis and performance test is as follows:
Transmission electron microscope (TEM), model are Japanese JEM-200CX; The x-ray photoelectron power spectrum, model Britain is ESCALB MK-II.
Dielectric and electricity performance measurement use following instrument: HP 4294A impedance/phase analysis instrument and HP 4140B skin peace/direct voltage source.
Below in conjunction with to HAON film performance test result, further specify beneficial effect of the present invention:
Fig. 2 shows, the selected area electron diffraction figure of the plane electronics transmission micro-imaging (TEM) of HAON film.(a) be the HAON film of 500 ℃ of growth in situ; (b) be 30 seconds HAON films of 1000 ℃ of rapid thermal annealings.The diffraction ring of the complete disperse that shows among two figure shows all crystalline attitudes of right and wrong of two samples.Therefore, the result of TEM proves that the HAON noncrystal membrane can bear 1000 ℃ of high-temperature heat treatment of 30 seconds.
Fig. 3 shows that the dielectric constant of HAON film and dielectric loss are with frequency variation curve.We obtain under 1 mhz frequencies the dielectric loss 0.065 (less than 0.1) of HAON by measuring metal-insulator-metal type (MIM) capacitor arrangement of Pt/HAON/Pt; Dielectric constant is 18.0.This dielectric constant is greater than SiO
2Dielectric constant 3.9 and Al
2O
3Value 8.9, simultaneously also greater than hafnium HfAl
2O
5Dielectric constant 16.6, it satisfies the requirement of high-dielectric-coefficient grid medium material of future generation.
Fig. 4 shows that the HAON film growth of 5 nanometer thickness is at the x-ray photoelectron spectroscopy of silicon substrate.Figure (a) is wide scintigram, (b) is the nitrogen 1s photoelectron spectroscopy of narrow scan.The atom percentage concentration of nitrogen element in film is 5.28%.The binding energy of nitrogen-atoms is 403.4eV, and comparing with simple substance nitrogen is high oxidation state.As seen the oxygen atom Cheng Jianwei N-O that nitrogen-atoms and electronegativity are bigger in the HAON film.
Fig. 5 shows, is grown in capacitance voltage (C-V) curve and corresponding current/voltage (J-V) curve of the HAON film that 5nm is thick on the n-Si substrate.Sample is through 1 minute reprocessing of 900 ℃ of short annealings in nitrogen atmosphere.The equivalent oxide thickness EOT that is calculated by Fig. 5 (a) C-V curve is 1.38nm.This value is slightly larger than 1.08nm, promptly supposes not have fully between film and Si substrate the equivalent oxide thickness value that boundary layer calculated of low-k.This shows between HAON film and Si substrate and to have the boundary layer that only is equivalent to one to two atomic layer level thickness.Simultaneously, about 0 volt, show to changing fast of inversion regime by accumulation area between HAON film and silicon substrate, to have little interface state density on the C-V curve; And figure also demonstrates the slow and fixed charge density of insignificant voltage scanning.It is 12.5mA/cm that Fig. 5 (b) provides the thick leakage current density of HAON film under the gate voltage of 1V of 5nm
2This value is than the SiO with identical EOT value
2Little about 4 orders of magnitude of the leakage current of film.
3, beneficial effect
To the microstructure analysis of HAON film and the result of performance test, can clearly be seen that the present invention compares with existing grid dielectric material, has tangible advantage by above-mentioned.
The amorphous state HAON dielectric film of the present invention's preparation has high thermodynamic stability, and its crystallization temperature can satisfy the requirement of the follow-up high-temperature heat treatment of current semi-conductor industry fully more than 1000 ℃.Metal-dielectric film of Pt/HAON/Pt-metal (MIM) capacitor arrangement that utilized this material preparation, the dielectric coefficient that records HAON is 18.0.Corresponding to prepared Pt/HAON/n-Si metal-dielectric film-semiconductor (MIS) structure of physical thickness 5 nanometer HAON films, recording equivalent oxide thickness (EOT) is 1.38nm, and leakage current is 12.5mA/cm
2Its performance index have reached the higher level that high dielectric gate dielectric substance research institute that colleague in the world obtains reaches, and also can satisfy the application request of MOSFET in the less demanding semiconductor of power consumption simultaneously.
Four, description of drawings
Fig. 1: the structural representation of the PLD film growth system of preparation HAON dielectric film.
1-HfAl
2O
5The ceramic target platform; 2-KrF excimer laser; The lens of 3-laser focusing; The connector of 4-mechanical pump and molecular pump; 5-substrate table; 6-silicon substrate material; 7-heating resistor stove; 8-growth room; 9-blow vent.
Fig. 2: the selected area electron diffraction figure of the plane electronics transmission micro-imaging of HAON film.
(a) be the HAON film of 500 ℃ of growth in situ;
(b) be 30 seconds HAON films of 1000 ℃ of rapid thermal annealings.
Fig. 3: the dielectric constant of HAON film and dielectric loss are with frequency variation curve, and wherein the x axle is represented frequency (unit hertz), y axle (left side) expression dielectric constant (ε of unit
r) and y axle (right side) dielectric loss (the tan δ of unit).
Fig. 4: the HAON film growth is at the x-ray photoelectron spectroscopy of silicon substrate, and wherein the x axle is represented binding energy (unit electron-volt), and the y axle is represented relative intensity (unit is for any).
(a) be wide scintigram;
(b) be the nitrogen 1s photoelectron spectroscopy of narrow scan.
Capacitance voltage (C-V) curve of the thick HAON film of Fig. 5: 5nm and corresponding current/voltage (J-V) curve.
(a) the equivalent oxide thickness EOT that calculated of C-V curve is 1.38nm, and wherein the x axle is represented grid voltage (unit is a volt), and the y axle is represented electric capacity (unit is a pico farad).
(b) the J-V curve provides, and the leakage current density under the gate voltage of 1V is 12.5mA/cm
2, wherein the x axle is represented grid voltage (unit is a volt), the y axle is represented leakage current density (unit is every square centimeter of a milliampere).
Five, embodiment
A kind of preparation method of high-dielectric coefficient grid dielectric material nitrogen hafnium aluminate film, its preparation process is:
1, with HfAl
2O
5Ceramic target is fixed on the target platform 1, and silicon substrate 6 is fixed on the substrate table 5, and resistance-heated furnace 7 is placed in the substrate table below, and they all are placed in the growth room 8 of PLD.There is the interface 9 of a logical nitrogen in the left side, growth room, and right upper portion is installed lens 3, and the bottom has an interface to connect vacuum pump 4.
2, with vacuum pump 4 growth room 8 is vacuumized and reach 1 * 10
-2Below the Pa, in growth room 8, charge into high pure nitrogen (99.999%) from air vent hole 9 then, and make maintenance 20PaN in the growth room
2Atmosphere.
3, with resistance furnace heated substrate platform, make substrate temperature be set in 500 ℃; Thin film deposition is made the sign of structure and electricity on the n type silicon chip that corroded through hydrofluoric acid, as: TEM, XPS, C-V and J-V measure; Or be deposited on Pt/TiO
2/ SiO
2Be used as the measurement of dielectric constant and dielectric loss on/the Si substrate; The concentration that nitrogen enters film can reach atom percentage concentration 5.28%.
4, use the KrF excimer laser, wavelength is 248nm, and pulse duration is 30ns, single pulse energy 50-600mJ, and energy density is 2.0J/cm
2Start laser, make laser beam pass through the quartz glass lens focus at HfA
2LO
5On the ceramic target, in film-forming process, target platform and substrate table are deposited on the substrate laser plasma equably, and cool to room temperature in position with constant speed rotation.
5, as the 900 ℃ of short annealings 1 minute in nitrogen atmosphere of the preferred short annealing heat-treatment furnace of aftertreatment technology of the film of electrical measurement.
Above-mentioned HfAl
2O
5Ceramic target is to utilize the solid phase reaction method preparation.Promptly use pure HfO
2And Al
2O
3Powder is mixed by 1: 1 mol ratio, all mixes in 20 hours through the abundant ball milling of ball mill again; Then this mixed powder is cold-pressed into the disk of Φ 21mm * 4mm under 14MPa pressure.At last in chamber type electric resistance furnace, disk under 1500 ℃ of temperature, sintering 6 hours in air and obtain fine and close linen ceramic target.Secondly, the preprocessing process of used n type silicon chip in film-forming process: at first n-Si (100) substrate is put into acetone and in ultrasonic device, cleaned 4 minutes, twice of continuous wash is then deionized water ultrasonic cleaning 4 minutes, use mobile deionized water rinsing 2 times again, use the SiO on hydrofluoric acid solution erosion removal surface at last
2
Claims (7)
1, a kind of high-dielectric coefficient grid dielectric material nitrogen hafnium aluminate film is characterized in that its molecular formula is HfAlO
5-xN
y
2, a kind of preparation method who is applied to the high-dielectric coefficient grid dielectric material nitrogen hafnium aluminate film in the Metal-oxide-semicondutor field effect transistor (MOSFET), its concrete steps are as follows:
(1) with HfAl
2O
5Ceramic target is placed on the target platform (1), silicon substrate (6) is placed on the substrate table (5), resistance furnace (7) is placed on the substrate table below, target platform (1), substrate table (5), substrate (6), resistance furnace (7) all are placed in the growth room, there is the hole (9) of a logical nitrogen in (8) left side in the growth room, place lens (3) before the right upper portion opening, lower openings connects vacuum pump (4).
(2) with vacuum pump (4) growth room (8) are vacuumized and reach 1 * 10
-2Below the Pa, in growth room 8, charge into high pure nitrogen (99.999%) from air vent hole (9) then, and make maintenance 20PaN in the growth room
2Atmosphere.
(3) with resistance furnace (7) heated substrate platform (5), make silicon substrate material (6) reach design temperature 300-800 ℃.
(4) start laser, make laser beam pass through the quartz glass lens focus at HfAl
2O
5On the ceramic target, in film-forming process, target platform and substrate table are deposited on the substrate laser plasma equably, and cool to room temperature in position with constant speed rotation.
(5) with film with short annealing heat-treatment furnace in blanket of nitrogen 800-1000 ℃, short annealing 0.5-3 minute.
3, the preparation method of nitrogen hafnium aluminate film according to claim 2 is characterized in that the described HfAl of step (1)
2O
5Ceramic target is to use pure HfO
2And Al
2O
3Powder, mixed in molar ratio by 1: 1 through the abundant ball milling 18-24 of ball mill hour, is cold-pressed into the disk of Φ 21mm * 4mm under 12-16MPa pressure, in chamber type electric resistance furnace, disk was made the linen HfAl of densification in sintering 5-8 hour under 1400-1600 ℃ in air
2O
5Ceramic target.
4, the preparation method of nitrogen hafnium aluminate film according to claim 2, it is characterized in that backing material selected in the step (1) is n-Si (100), resistivity 2-3 Ω .cm, its pre-treatment step is: at first n-Si (100) substrate is put into acetone or alcohol cleaned 3-5 minute in ultrasonic device, twice of continuous wash is then deionized water ultrasonic cleaning 3-5 minute, with the deionized water rinsing number that flows time, use the SiO on hydrofluoric acid solution erosion removal surface at last again
2
5, the preparation method of nitrogen hafnium aluminate film according to claim 2 is characterized in that the resistance furnace described in the step (3) can any temperature keep constant between 20 ℃-900 ℃, and the preferred design temperature of heating silicon substrate is 500 ℃.
6, the preparation method of nitrogen hafnium aluminate film according to claim 2, it is characterized in that being that the laser described in the step (4) is KrF (KrF) excimer laser, wavelength 248nm, pulse duration 30ns, single pulse energy 50-600mJ, energy density 2.0J/cm
2
7, the preparation method of nitrogen hafnium aluminate film according to claim 2 is characterized in that being that short annealing heat-treatment furnace preferred annealing temperature in blanket of nitrogen that the aftertreatment technology as the electrical measurement film described in the step (5) adopts is 900 ℃ of annealing 1 minute.
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